# Power MOSFET, N Channel, 55 V, 49 A, 0.012 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:2580014/)

**URL**: https://novapart.co/products/IRFI1010NPBF/power-mosfet-n-channel-55-v-49-a-0012-ohm-to-220fp
**SKU**: IRFI1010NPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4550
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 58W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 58W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.012ohm |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 49A |
| Drain Source On State Resistance | 0.012ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2580014/)

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D Voss = 55V<br>Ω<br>Rpg(on) = 0.012<br>G<br>Ip = 49A<br>S<br>well<br>WAG<br>QQ<br>TO-220 FULLPAK<br>**----- End of picture text -----**<br>


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∆ ∆<br>Static Drain-to-Source On-Resistance | —— | —- [0.012] Ω | Vas = 10V, Ip = 26A@<br>Gate Threshold Voltage | 2.0 | -—-| 4.0 | V | Vps= Vas, Ip = 250uA<br>Forward Transconductance | 30 |—-|-—-| S$ | Vos=25V, Ip = 43A©<br>|mss Drain-to-Source; Leakage Current | —- | —| A VpsDS = 55V, 1 VesSCS = OV<br>° P— [= [aso| [Vos= 44V, Ves= OV,<br>loss Gate-to-Source Forward Leakage | —- | —-| 100 | nA Vas = 20V<br>[Q5___| Gate-to-Source Reverse Leakage | —- | ——|-100 | Vos = -20V<br>[Qgs Total Gate Charge = [= [30| to= a<br>[Qua __‘ | Gat te-te-t o- DrainSource("Miller")Charge Charge | —- |  —--—— | 52 3  || nc | V oe s =  44v10V, See Fig. 6<br>i _[RiseTimeTurn-On Delay Time Si Pt | [|][J] __]| Voo== 43828<br>Ω<br>Tumn-Off Delay Time [40 [=] "* | Ro= 36<br>Ω,<br>**----- End of picture text -----**<br>


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49 MOSFET symbol D<br>showing the<br>G<br>A .<br>290 integralp-n junctionreversediode. S<br>—-|-—-|1.3 | V_ | T= 25°C, ls = 26A, Ves = OV ®<br>—| 81 | 120] ns | Ty = 25°C, Ir = 43A<br>——| 240 nC | di/dt = 100A/us ©<br>@® Pulse width ≤  300us; duty cycle  ≤ 2%.<br>**----- End of picture text -----**<br>


© t=60s, f=G60Hz 

Ω 

ISD ≤ ≤ ≤ 

≤ 

Uses IRF1010N data and test conditions 

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1000 1000<br>                   VGS ee                    VGS oe<br> TOP           15V  TOP           15V<br>                   10V a | |                    10V a0 | |<br>                   8.0V                   7.0V A |                    8.0V                   7.0V ay TTT<br>                   6.0V 0 a |                    6.0V a |<br>                   5.5V                    5.5V<br>                   5.0V                    5.0V<br> BOTTOM   4.5V  BOTTOM   4.5V<br>ee |<br>NN A UN)<br>Y Gat<br>100 eroa /ee ee ee ee 100 LLeeeeel|<br>ey)ae) | nl enn)/Aene<br>| | Yj/) ee eea ) /Zeee0ile<br>iyYo SS ee 4.5V eee<br>y / ie  4.5V  20µs PULSE WIDTH nen Sy Uy  20µs PULSE WIDTH<br>10 We4 r  T   = 25°CC | A 10 DA mi  T   = 175°CC<br>0.1 1 10 100 0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


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1000 3.0<br>I    = 72AD<br>aSSa ee SSee eSee es Po LEE EE<br>ee ee ee 2.5 PEt<br>T  = 25°CJ<br>100 f ae T  = 175°CJ .s08 2.0 a a<br>—— A<br>1.5<br>/<br>Ye) EEE<br>YY | A |<br>10 1.0<br>a<br>pf 0.5 he p>Eeade<br> V     = 25VDS<br>1 p eta pap  20µs PULSE WIDTH A 0.0 OaPE  V      = 10VGS<br>4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>(Normalized)<br>D<br>I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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5000 20<br>V      = 0V,         f = 1MHzGS I    = 43ADD<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds V      = 44VDSDS<br>4000 N Ciss C      = CC      = C     + Crss         gdoss        ds         gd p 16 e p V      = 28VDSDS Re<br>>< Fit | NGRE<br>| Pott ye<br>3000 Coss 12<br>Sp Pt  tA<br>NE lll Pet tL YA<br>2000 RN ll 8 PL tL Tam<br>DN | PET | A<br>Crss<br>1000 ee 4 peor<br> FOR TEST CIRCUIT<br>0 alllll A 0 fpfAGREE fit]AGREE fit] fit]     SEE FIGURE 13<br>1 10 100 0 20 40 60 80 100 120 140<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)GG<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000 —————— 1000 —aenneaae  OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>RSE SE SEES ES tin<br>a a a Pe TTS 10µs<br>100<br>P| ee pac |<br>100µs<br>100 Po) | eT SS ee e<br>SS T  = 175°CJ 24SAOSS| SSS Pee | L T<br>T  = 25°CJ 1ms<br>10<br>=as/qgeeeeee PP S P ST<br>10ms<br>T     = 25°CC<br>T     = 175°CJ<br>10 Af V      = 0VGS A 1 S  Single Pulse H<br>eye} t tt Antoa n<br>0.4 0.8 1.2 1.6 2.0 2.4 2.8 1 10 100<br>V     , Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A)D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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20<br>I    = 43ADD<br>V      = 44VDSDS<br>V      = 28VDSDS<br>16 e p Re<br>Fit | NGRE<br>Pott ye<br>12<br>Pt  tA<br>Pet tL YA<br>8 PL tL Tam<br>PET | A<br>4 peor<br> FOR TEST CIRCUIT<br>0 fpfAGREE fit]AGREE fit] fit]     SEE FIGURE 13<br>0 20 40 60 80 100 120 140<br>Q   , Total Gate Charge (nC)GG<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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50 STAT es ous<br>40<br>Sa NEREEEeee Ro | an -<br>Pi LT ANE TET TT<br>30 SERRE SVEeee }} tov ≤ 1<br>≤ 0.1 %<br>COTTA NT an<br>20<br>Se Fig 10a. Switching Time Test Circuit<br>VDS<br>10 90%<br>SERRE ——<br>0 SEPi tT TTTRRETN \/<br>25 50 75 100 125 ° 150 175 10% \<br>T   , Case TemperatureC (  C)<br>VGS<br>td(on) tr td(off) tf<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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 10<br>D = 0.50<br> 1<br>0.20<br>0.10<br>p r dd<br>0.05 Se} fH PDM<br>0.1<br>0.02 t1<br>0.01 t2<br>| ae SINGLE PULSE a<br>(THERMAL RESPONSE) Notes:<br>> | 1. Duty factor D = t   / t1 2<br>e l 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1  10<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>. Jt tp 0.01Ω<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>- tp<br>/ ‘y<br>/ \<br>IAS<br>Fig 12b. Unclamped Inductive<br>QG<br>. ____.<br>V i o<br>A QGS QGD<br>VG =<br>Charge<br>**----- End of picture text -----**<br>


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1000<br>                    ID<br>SER TOP            18A<br>800 P||                    31ABOTTOM    43A<br>NE<br>600 PNET tt<br>PK<br>400<br>NAN<br>ROKK<br>200<br>| WAKN P|<br>POS SAN<br> V      = 25VDD<br>0<br>25 P| 50 75 100 Se 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T. ]<br>|<br>50KΩ<br>12V .2µF<br>.3µF<br>LL ig |<br>+<br>_ EEL D.U.T. -VDS<br>VGS<br>a<br>3mA<br>Ort.<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


## TO-220 Full-Pak Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-220 Full-Pak Part Marking Information 

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E XAMPLE : T H IS  IS  AN IR F I840G<br>WIT H  AS S E MB LY  PAR T  NU MB E R<br>L OT  CODE  3432 INT E R NAT IONAL<br>AS S E MB LE D ON  WW 24 1999 R E CT IF IE R IR F I840G<br>IN T H E  AS S E MB LY LINE  "K " L OGO 924K<br> 34         32 DAT E  CODE<br>Note:   "P" in assembly line<br>position indicates "Lead-Free" AS S E MB LY YE AR  9 =  1999<br>LOT  CODE WE E K 24<br>LINE  K<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/04 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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- [View this product on Novapart](https://novapart.co/products/IRFI1010NPBF/power-mosfet-n-channel-55-v-49-a-0012-ohm-to-220fp)
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- [Supplier page](https://es.farnell.com/en-ES/infineon/irfi1010npbf/mosfet-n-ch-55v-49a-to-220fp-3/dp/2580014)
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