# Power MOSFET, N Channel, 30 V, 57 A, 0.0048 ohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:2580012RL/)

**URL**: https://novapart.co/products/IRFHM8329TRPBF/power-mosfet-n-channel-30-v-57-a-00048-ohm-pqfn
**SKU**: IRFHM8329TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1090
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Channel Type | N Channel |
| Power Dissipation | 33W |
| Drain Source On State Resistance | 0.0048ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2580012RL/)

|**VDSS**<br>**30**<br>**V**<br>**RDS(on)max**<br>(@ VGS=10V)<br>**6.1**<br>(@VGS= 4.5V)<br>**8.8**<br>**Qg (typical)**<br>**13**<br>**nC**<br>**ID**<br>**(@TC (Bottom) = 25°C)**<br>**24**<br>**A**<br>**m**<br>**VGSmax**<br>**±20**<br>**V**<br>~~Girt~~<br>~~==e~~|**VDSS**<br>**30**<br>**V**<br>**RDS(on)max**<br>(@ VGS=10V)<br>**6.1**<br>(@VGS= 4.5V)<br>**8.8**<br>**Qg (typical)**<br>**13**<br>**nC**<br>**ID**<br>**(@TC (Bottom) = 25°C)**<br>**24**<br>**A**<br>**m**<br>**VGSmax**<br>**±20**<br>**V**<br>~~Girt~~<br>~~==e~~|
|---|---|
|**Applications**||
|Charge and Discharge Switch for Notebook PC Battery Application||



## IRFHM8329PbF ~~—~~ 

HEXFET[® ] Power MOSFET 

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S  [G ]<br>S<br>S<br>D<br>D<br>D<br>D<br>D<br>PQFN 3.3X3.3 mm<br>**----- End of picture text -----**<br>


- System/Load Switch 

- Synchronous MOSFET for Buck Converters 

|**Features**||**Benefits**|
|---|---|---|
|Low Thermal Resistance to PCB (<3.8°C/W)||Enable better thermal dissipation|
|Low Profile (<1.05 mm)||Increased Power Density|
|Industry-Standard Pinout|results inMulti|Multi-Vendor Compatibility|
|Compatible with Existing Surface Mount Techniques|Compatible with Existing Surface Mount Techniques <br>|Easier Manufacturing|
|RoHS Compliant Containing no Lead, no Bromide and no Halogen|RoHS Compliant Containing no Lead, no Bromide and no Halogen|Environmentally Friendlier|
|MSL1, ConsumerQualification||IncreasedReliability|



|**Base part number**<br>~~pf~~|**Package Type**<br>~~pf~~|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRFHM8329PbF<br>~~pf~~|PQFN 3.3 mm x 3.3 mm<br>~~pf~~|Tape and Reel|4000|IRFHM8329TRPbF|



## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VGS|Gate-to-Source Voltage|± 20|V|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|16|A|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V|13||
|ID@ TC(Bottom)= 25°C|Continuous Drain Current, VGS@ 10V|57||
|ID@ TC(Bottom)= 100°C|Continuous Drain Current, VGS@ 10V|36||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V (Source Bonding<br>TechnologyLimited)|@ 10V (Source Bonding<br>24||
|IDM|Pulsed Drain Current|230||
|PD@TA= 25°C|Power Dissipation|2.6|W|
|PD@TC(Bottom)= 25°C|Power Dissipation|33||
||Linear Derating Factor|0.021|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|



Notes  through  are on page 9 

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|<br>IRFHM8329PbF<br>~~Cinfineon~~<br>~~LL~~||
|---|---|
|**Static@ TJ = 25°C(unless otherwise specified)**||
|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Units**<br>**Conditions**<br>BVDSS<br>Drain-to-Source Breakdown Voltage<br>30<br>–––<br>–––<br>V<br>VGS =0V, ID =250µA<br>~~es~~<br>~~I FS (OU~~<br>~~QO~~<br>~~GO~~<br>~~es~~<br>~~I~~<br>~~ID (OR QO~~||
|BVDSS/TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>21<br>–––<br>mV/°C Reference to 25°C,ID= 1mA||
|RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>4.8<br>6.1<br>m<br>VGS= 10V,ID= 20A<br>–––<br>6.8<br>8.8<br>VGS= 4.5V,ID= 16A<br>VGS(th)<br>GateThresholdVoltage<br>1.2<br>1.7<br>2.2<br>V<br>VDS= VGS, ID= 25µA<br>VGS(th)<br>Gate Threshold Voltage Coefficient<br>–––<br>-6.0<br>–––<br>mV/°C<br>~~ft~~||
|IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>1.0<br>VDS= 24V,VGS= 0V<br>–––<br>–––<br>150<br>VDS =24V, VGS =0V, TJ =125°C<br>IGSS<br>Gate-to-SourceForwardLeakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS = -20V<br>gfs<br>ForwardTransconductance<br>56<br>–––<br>–––<br>S<br>VDS= 10V,ID= 20A<br>Qg<br>Total Gate Charge<br>–––<br>26<br>–––<br>nC<br>VGS =10V, VDS =15V, ID =20A<br>Qg<br>TotalGate Charge<br>–––<br>13<br>20<br>Qgs1<br>Pre-Vth Gate-to-Source Charge<br>–––<br>2.9<br>–––<br>VDS= 15V<br>µA<br>~~BO~~<br>~~et ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~I~~<br>~~I~~<br>~~(OD(OS(OO~~<br>~~————————————~~||
|Qgs2<br>Post-VthGate-to-Source Charge<br>–––<br>2.0<br>–––<br>nC<br>VGS= 4.5V<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>4.6<br>–––<br>ID= 20A<br>~~————————————~~||
|Qgodr<br>Gate Charge Overdrive<br>–––<br>3.5<br>–––<br>Qsw<br>Switch Charge(Qgs2+Qgd)<br>–––<br>6.6<br>–––<br>Qoss<br>Output Charge<br>–––<br>7.8<br>–––<br>nC<br>VDS= 16V,VGS=0V<br>~~—————————~~<br>~~es~~<br>~~I GD (OO~~<br>~~QO~~||
|RG<br>Gate Resistance<br>–––<br>1.4<br>–––<br>||
|td(on)<br>Turn-On Delay Time<br>–––<br>14<br>–––<br>VDD= 15V, VGS= 4.5V<br>tr<br>RiseTime<br>–––<br>74<br>–––<br>ns<br>ID= 20A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>14<br>–––<br>RG=1.8<br>tf<br>Fall Time<br>–––<br>14<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>1710<br>–––<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>360<br>–––<br>pF<br>VDS= 10V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>180<br>–––<br>ƒ= 1.0MHz<br>~~esns~~<br>~~———————~~<br>~~ee~~<br>~~————————————~~<br>~~a~~<br>~~ne~~||
|**Avalanche Characteristics**||
|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**||
|EAS<br>Single Pulse Avalanche Energy<br>–––<br>43<br>mJ||
|IAR<br>Avalanche Current<br>–––<br>20<br>A||
|**Diode Characteristics**||
|D<br>S<br>G<br>**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>24<br>A<br>MOSFET symbol<br>(BodyDiode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>230<br>integral reverse<br>(BodyDiode) <br>p-njunctiondiode.<br>~~es~~<br>~~I I~~<br>~~YO~~<br>~~re~~<br>~~a~~<br>~~a~~||
|VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.0<br>V<br>TJ =25°C, IS =20A, VGS =0V||
|trr<br>Reverse Recovery Time<br>–––<br>13<br>20<br>nsTJ= 25°C, IF= 20A, VDD= 15V<br>Qrr<br>Reverse Recovery Charge<br>–––<br>8.1<br>12<br>nC di/dt=290A/µs<br>~~SN~~<br>~~ee~~||
|**Thermal Resistance**||
|**Parameter**<br>**Typ. **<br>**Max.**<br>**Units**||
|RJC (Bottom)Junction-to-Case<br>–––<br>3.8||
|RJC (Top)<br>Junction-to-Case<br>–––<br>42<br>°C/W||
|RJA<br>Junction-to-Ambient<br>–––<br>47||
|RJA (<10s)<br>Junction-to-Ambient<br>–––<br>32||



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1000 1000<br>VGS<br>VGS<br>TOP           10V<br>TOP           10V<br>7.0V<br>7.0V<br>4.5V<br>4.5V<br>4.0V<br>100 3.5V 4.0V<br>3.5V<br>3.0V<br>3.0V<br>2.8V 100 2.8V<br>BOTTOM 2.5V<br>BOTTOM 2.5V<br>10<br>Z ,<br>10<br>1<br>2.5V<br>2.5V<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>0.1 1<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>Fig 1.   Typical Output Characteristics<br>1000 1.8<br>ID = 20A<br>1.6 V GS  = 10V<br>100 TJ = 150°C pas 1.4 FH<br>1.2<br>10 /]{| TJ = 25°C 1.0 SannpZennne |<br>0.8<br>VDS = 10V<br>60µs PULSE WIDTH AT ECELEL<br>1.0 ATT 0.6 SCcannnnneEL<br>2 3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics  Fig 4.   Normalized On-Resistance vs. Temperature<br>10000 14<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds SHORTED ID= 20A VDS= 24V<br>C rss    = C gd  12 V DS = 15V<br>Coss   = Cds + Cgd VDS= 6V<br>10<br>C iss<br>8<br>1000<br>6<br>satel Coss 4 — fp —<br>2<br>Crss<br>0<br>100 rss 0 A 10 20 30 40<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance vs. Drain-to-Source Voltage  Fig 6.   Typical Gate Charge vs. Gate-to-Source Voltage<br>3  2016-2-23<br>OO<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

IRFHM8329PbF ~~LL~~ 

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1000<br>100<br>Te<br>TJ = 150°C<br>10 fr<br>T J  = 25°C<br>1<br>V GS  = 0V<br>0.1<br>0.0 0.5 1.0 1.5 2.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>100µsec<br>1 ms ec<br>10<br>Limited by Package<br>1<br>10msec<br>Tc = 25°C<br>Tj = 150°C DC<br>Single Pulse<br>0.1<br>0.1 1 10 100<br>VDS, Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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2.6<br>2.4<br>2.2<br>2.0<br>1.8 rw |<br>1.6 I D = 25µA 25µA<br>ID = 250µAD = 250µA = 250µA<br>LA-TNINWN_|<br>1.4 I D  = 1.0mA<br>1.2 I D  = 1.0A<br>1.0<br>0.8 TPP Pet tT IN<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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60<br>Limited by source  2.4<br>| bonding technology<br>50<br>2.2<br>40 2.0<br>1.8 rw |<br>|<br>30<br>1.6 I D = 25µA 25µA<br>ID = 250µAD = 250µA = 250µA<br>20 ooo LA-TNINWN_|<br>1.4 I D  = 1.0mA<br>1.2 I D  = 1.0A<br>10<br>1.0<br>0<br>Ff ff ft | 0.8 TPP Pet tT<br>25 50 75 100 125 150<br>-75 -50 -25 0 25 50 75 100 125<br> TC , Case Temperature (°C)<br>ID , Drain Current (A)<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


## **Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Drain-to–Source Breakdown Voltage 

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10<br>TMTTL Lt<br>D = 0.50<br>1 0.20 email<br>0.10<br>0.05<br>0.1 0.02 ee ail A<br>0.01<br>0.01 pai SINGLE PULSE HLLETE ELLIE<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 SEP ee ||| ee<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 11.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>4  2016-2-23<br>EE<br>Thermal Response ( Z  thJC )<br>**----- End of picture text -----**<br>


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25 180<br>ID = 20A 160 I D<br>20 LLL \pe TOP         4.0A<br>140 8.6A<br>BOTTOM 20A<br>120<br>15 cI PXCEE<br>N 100 aN<br>10 MEErN 80 CONCEP NX<br>TJ = 125°C<br>60<br>5 eH DNEKGEEEEE<br>40<br>N= TJ = 25°C SRNGKGRan<br>20<br>0<br>0.0 4.0 8.0 12.0 16.0 20.0 0<br>CTT) = BBS<br>25 50 75 100 125 150<br>VGS, Gate-to-Source Voltage (V)<br>Starting TJ , Junction Temperature (°C)<br>)<br>RDS(on),  Drain-to -Source On Resistance ( m<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


## **Fig 12.** On– Resistance vs. Gate Voltage 

**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

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100<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150 ° C and<br>Rill Tstart =25°C (Single Pulse)<br>10 | [i]<br>1 IMINTTUTP<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 150°C. (Single Pulse)<br>semammmmmeeeee BaiCannwoul<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 14.** Typical Avalanche Current vs. Pulsewidth 

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**Fig 15.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>20V aiedL IAS<br>tp 0.01<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17a.** Switching Time Test Circuit 

**Fig 17b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>|<br>|<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 18a.** Gate Charge Test Circuit 

**Fig 18b.** Gate Charge Waveform 

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## **PQFN 3.3 x 3.3 Outline “C” Package Details** 

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8 7 6 5<br>1 2 3 4<br>**----- End of picture text -----**<br>


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1 2 3 4<br>8 7 6 5<br>**----- End of picture text -----**<br>


## **PQFN 3.3 x 3.3 Outline “G” Package Details** 

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8 7 6 5<br>#1 2 3 4<br>**----- End of picture text -----**<br>


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#1 2 3 4<br>8 7 6 5<br>**----- End of picture text -----**<br>


For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.irf.com/technical info/appnotes/an 1154.pdf 7 2016-2-23 ~~ee~~ 

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## **PQFN 3.3mm x 3.3mm Outline Part Marking** 

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INTERNATIONAL<br>RECTIFIER LOGO<br>~<br>DATE CODE<br>XXXX PART NUMBER<br>ASSEMBLY ~<br>SITE CODE ?YWW? MARKING CODE<br>(Per Marking Spec)<br>(Per SCOP 200-002) XXXXX<br>» \ LOT CODE<br>PIN 1 (Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>IDENTIFIER<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

**PQFN 3.3mm x 3.3mm Outline Tape and Reel** 

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REEL DIMENSIONS TAPE DIMENSIONS<br>DIMENSION (MM) DIMENSION (INCH)<br>CODE MIN MAX MIN MAX<br>Ao 3.50 3.70 .138 .146<br>Bo 3.50 3.70 .138 .146<br>Ko 1.10 1.30 .043 .051<br>P1 7.90 8.10 .311 .319<br>QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  W 11.80 12.20 .465 .480<br>W1 12.30 12.50 .484 .492<br>Qty 4000<br>Reel Diameter 13   Inches<br>=<br>CODE DESCRIPTION<br>Ao Dimension design to accommodate the component width<br>Bo Dimension design to accommodate the component lenght<br>Ko Dimension design to accommodate the component thickness<br>W Overall width of the carrier tape<br>P1 Pitch between successive cavity centers<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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**Qualification Information[† ]** 

|**Qualification Information[† ]**<br>~~———~~|||
|---|---|---|
|**Qualification Level**<br>~~———~~|Consumer††<br>(per JEDEC JESD47F†††guidelines)||
|**Moisture Sensitivity Level**<br>~~———~~|PQFN 3.3mm x 3.3mm|MSL1<br>(per JEDEC J-STD-020D†††)|
|**RoHS Compliant**<br>~~———~~|Yes||



- ††  Higher qualification ratings may be available should the user have such requirements.  Please contact your - 

- International Rectifier sales representative for further information: http://www.irf.com/whoto call/salesrep/ 

- †††  Applicable version of JEDEC standard at the time of product release. 

## **Notes:** 

- Repetitive rating;  pulse width limited by max. junction temperature. 

- Starting TJ = 25°C, L = 0.22mH, RG = 50, IAS = 20A. 

- Pulse width  400µs; duty cycle  2%. 

-   R is measured at TJ of approximately 90°C. 

- When mounted on 1 inch square  2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Please refer to AN-994 

- for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf 

- Calculated continuous current based on maximum allowable junction temperature. 

-  Current is limited to 25A by source bonding technology. 

9 2016-2-23 ~~ee~~ 

2016-2-23 

|infineon|infineon|infineon|infineon|infineon|infineon|
|---|---|---|---|---|---|
|<br>IRFHM8329PbF<br>infineon<br>~~GenEee~~||||||
|||**Revision History**||||
|||**Date**||**Comments**||
|||||Updated schematic  on page 1||
|||6/5/2014||Updated package outline and part marking on page 7||
|||||Updated tape and reel onpage 8||
|||6/30/2014||Remove “SAWN” package outline on page 7.||
|||||Updated datasheet with corporate template||
|||2/23/2016||Updated package outline to reflect the PCN # (241-PCN30-Public) for “Option C” and||
||||“Option G” on page 7.|“Option G” on page 7.||



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

10 2016-2-23 ~~ee~~ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFHM8329TRPBF/power-mosfet-n-channel-30-v-57-a-00048-ohm-pqfn)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irfhm8329trpbf/mosfet-n-ch-30v-57a-pqfn-8/dp/2580012RL)
---

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