# Power MOSFET, N Channel, 30 V, 40 A, 3800 µohm, QFN, Surface Mount

![Product image](https://novapart.co/image/farnell:1857346/)

**URL**: https://novapart.co/products/IRFHM830TRPBF/power-mosfet-n-channel-30-v-40-a-3800-ohm-qfn
**SKU**: IRFHM830TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3570
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.7W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | QFN |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 40A |
| Drain Source On State Resistance | 3800µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1857346/)

~~T&R Rectitier~~ 

## IRFHM830PbF ~~la~~ 

## HEXFET[® ] Power MOSFET 

|**VDSS**|**30**|**V**|
|---|---|---|
|**RDS(on)max**<br>(@ VGS=10V)|**3.8**|**m**|
|**Qg (typical)**|**15**|**nC**|
|**Rg (typical)**|**2.5**||
|**ID**<br>**(@TC (Bottom) = 25°C)**|**40**|**A**|



PQFN 3.3 x 3.3 mm 

## **Applications** 

-  Battery Operated DC Motor Inverter MOSFET 

## **Features** 

Low RDSon (< 3.8m) Low Thermal Resistance to PCB (<3.4°C/W) 100% Rg tested Low Profile (< 1.0 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification 

## **Benefits** 

Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density  Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability 

~~Pe~~ **Standard Pack Orderable part number Package Type Note** ~~EE~~ **Form Quantity** IRFHM830TRPbF PQFN 3.3mm x 3.3mm Tape and Reel 4000 ~~rs ee IRFHM830TR2PBF PQFN 3.3mm x 3.3mm Tape and Reel Te 400~~ EOL n ~~eee~~ otice # 259 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage|30|V|
|VGS|Gate-to-Source Voltage|± 20||
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|21|A|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V|17||
|ID@ TC(Bottom)= 25°C|Continuous Drain Current, VGS@ 10V|40||
|ID@ TC(Bottom)= 100°C|Continuous Drain Current, VGS@ 10V|40||
|IDM|Pulsed Drain Current|160||
|PD@TA= 25°C|Power Dissipation|2.7|W|
|PD@TC(Bottom)= 25°C|Power Dissipation|37||
||Linear Derating Factor|0.022|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|



Notes  through  are on page 9 

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IRFHM830PbF ~~[~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~a ee~~<br>~~es~~|**Parameter**<br>~~ee~~<br>|**Min.**<br>~~ee~~<br>~~GQ~~<br>|**Typ. **<br>~~ee~~<br>~~GQ~~<br>|**Max.**<br>~~ee~~<br>~~GQ~~<br>|**Units**<br>~~ee~~<br>|**Conditions**<br>~~ee~~<br>|
|---|---|---|---|---|---|---|
|BVDSS<br>~~es~~~~**G**~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~**G**~~|30<br>~~GQ~~<br>~~**G**~~<br>~~ee~~|–––<br>~~GQ~~<br>~~**G**O~~<br>|–––<br>~~GQ~~<br>~~O~~|V<br>~~O~~|VGS= 0V,ID= 250µA<br>~~O~~<br>~~————~~|
|BVDSS/TJ<br>~~es~~~~**G**~~<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~**G**~~|–––<br>~~GQ~~<br>~~**G**~~<br>~~ee~~|0.02<br>~~GQ~~<br>~~**G**O~~<br>~~G~~<br>|–––<br>~~GQ~~<br>~~O~~<br>~~G~~|V/°C Reference to 25°C<br>~~O~~<br>~~G~~|V/°C Reference to 25°C,ID= 1mA<br>~~O~~<br>~~G~~<br>~~————~~|
|RDS(on)<br>~~**G**~~<br>~~es~~<br>~~Ss~~|Static Drain-to-Source On-Resistance<br>~~**G**~~<br>~~Ss~~|–––<br>~~**G**~~<br>~~Ss~~<br>~~ee~~|3.0<br>~~**G**O~~<br>~~G~~<br>~~Ss~~<br>~~ee~~|3.8<br>~~O~~<br>~~G~~<br>~~Ss~~|m <br>~~O~~<br>~~G~~<br>~~Ss~~|VGS= 10V,ID= 20A<br>~~O~~<br>~~G~~<br>~~Ss~~<br>~~————~~<br>~~Po~~|
|||–––<br>~~Ss~~<br>~~ee~~|4.8<br>~~Ss~~<br>~~ee~~|6.0<br>~~Ss~~||VGS= 4.5V,ID= 20A<br>~~Ss~~<br>~~————~~<br>~~Po~~|
|VGS(th)<br>~~a~~<br>~~ese~~|Gate Threshold Voltage<br>~~a~~<br>~~es~~|1.35<br>~~ee ~~<br>~~a~~<br>~~s~~|1.8<br> ~~ee~~<br>~~a~~<br>~~s~~|2.35<br>~~a~~<br>~~s~~|V<br>~~a~~<br>~~s~~|VDS= VGS, ID= 50µA<br>~~————~~<br>~~Po~~<br>~~a~~|
|VGS(th)<br>~~a~~<br>~~ese~~|Gate Threshold Voltage Coefficient<br>~~a~~<br>~~es~~|–––<br>~~ee ~~<br>~~a~~<br>~~s~~|-6.3<br> <br>~~a~~<br>~~s~~|–––<br>~~a~~<br>~~s~~|mV/°C<br>~~a~~<br>~~s~~||
|GS(th)<br>IDSS<br>~~ese~~<br>~~=~~|Drain-to-Source Leakage Current<br>~~es~~<br>~~=~~|–––<br>~~s~~<br>~~=~~<br>~~ee~~|–––<br>~~s~~<br>~~=~~<br>~~eee~~|1<br>~~s~~<br>~~=~~<br>~~eee~~|µA<br>~~s~~<br>~~=~~<br>|VDS= 24V,VGS= 0V<br>~~=~~<br>~~Po~~|
|||–––<br>~~=~~<br>~~ee~~|–––<br>~~=~~<br>~~eee~~|150<br>~~=~~<br>~~eee~~||VDS= 24V,VGS= 0V,TJ= 125°C<br>~~=~~<br>~~Po~~|
|IGSS<br>~~A~~<br>~~ee~~<br>~~I~~|Gate-to-Source Forward Leakage<br>~~A~~<br>~~ee~~<br>|–––<br>~~ee ~~<br>~~A~~<br>~~ee~~|–––<br> ~~eee ~~<br>~~A~~|100<br> ~~eee ~~<br>~~A~~|nA<br> <br>~~A~~|VGS= 20V<br> ~~Po~~<br>~~A~~<br>~~Po~~|
||Gate-to-Source Reverse Leakage<br>~~A~~<br>~~ee~~<br>|–––<br>~~A~~<br>~~ee~~|–––<br>~~A~~|-100<br>~~A~~||VGS= -20V<br>~~A~~<br>~~Po~~|
|gfs<br>~~ee~~<br>~~I~~|Forward Transconductance<br>~~ee~~<br>~~a~~|52<br>~~ee~~<br>~~Gs~~|–––<br>~~Gs~~|–––<br>~~Q~~|S|VDS= 15V,ID= 20A<br>~~Po~~|
|Qg<br>~~ee~~<br>~~I ~~<br>~~a~~<br>~~re~~|Total Gate Charge<br>~~ee~~<br> ~~a~~|–––<br>~~ee~~<br>~~Gs~~|31<br>~~Gs~~|–––<br>~~Q~~|nC|VGS = 10V,VDS= 15V,ID= 20A<br>~~Po~~<br>~~|~~|
|Qg<br>~~re~~<br>~~ee~~|Total Gate Charge|–––|15|23||VDS= 15V<br>VGS= 4.5V<br>ID= 20A<br>See Fig.17 & 18|
|Qgs1<br>~~re~~<br>~~ee~~|Pre-Vth Gate-to-Source Charge|–––|3.8|–––|||
|Qgs2<br>~~ee~~<br>~~ee~~<br>~~eeee~~|Post-Vth Gate-to-Source Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|2.0<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|Qgd<br>~~eeee~~|Gate-to-Drain Charge<br>~~ee~~|–––<br>~~ee~~|5.0<br>~~ee~~|–––<br>~~ee~~|||
|Qgodr<br>~~eeee~~<br>~~ee~~<br>~~eeee~~|Gate Charge Overdrive<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|4.2<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|Qsw<br>~~eeee~~<br>~~a~~|Switch Charge(Qgs2+ Qgd)<br>~~ee~~|–––<br>~~ee~~<br>~~GQ~~|7.0<br>~~ee~~<br>~~GQ~~|–––<br>~~ee~~<br>~~GQ~~|||
|Qoss<br>~~eeee~~<br>~~es~~<br>~~a~~<br>~~ee~~|Output Charge<br>~~ee~~<br>~~es~~<br>~~rs~~<br>|–––<br>~~ee~~<br>~~es~~<br>~~GQ~~<br>~~Gt~~<br>|9.7<br>~~ee~~<br>~~es~~<br>~~GQ~~<br>~~Qe~~<br>|–––<br>~~ee~~<br>~~es~~<br>~~GQ~~<br>~~Qe~~<br>|nC<br>~~es~~|VDS= 16V,VGS= 0V<br>~~es~~|
|RG<br>~~a~~<br>~~ee~~|Gate Resistance<br>~~rs~~<br>|–––<br>~~GQ~~<br>~~Gt~~<br>|2.5<br>~~GQ~~<br>~~Qe~~<br>|–––<br>~~GQ~~<br>~~Qe~~<br>|||
|td(on)<br>~~eeee~~|Turn-On DelayTime<br>~~rs~~<br>~~ee~~|–––<br>~~Gt~~<br>~~ee~~|12<br>~~Qe~~<br>~~ee~~|–––<br>~~Qe~~<br>~~ee~~|ns|VDD= 15V, VGS= 4.5V<br>ID= 20A<br>RG= 1.8<br>See Fig.15|
|tr<br>~~eeee~~<br>~~ee~~<br>~~eeee~~|Rise Time<br>~~rs~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~Gt~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|25<br>~~Qe~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~Qe~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|td(off)<br>~~eeee~~|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~|13<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~eeee~~<br>~~ee~~<br>~~rs~~|Fall Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|9.2<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|Ciss<br>~~rs~~<br>~~ee~~|Input Capacitance|–––|2155|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss<br>~~rs~~<br>~~ee~~<br>~~ee~~|Output Capacitance|–––|350|–––|||
|Crss<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance|–––|160|–––|||



|~~a~~|**Parameter**<br>~~QO~~|**Min.**<br>~~QO~~|**Typ.**<br>~~QO (OQ~~|**Max.**<br>~~(OQ~~|**Units**<br>~~(OQ~~|**Conditions**<br>~~(OQ~~|
|---|---|---|---|---|---|---|
|IS<br>~~fi~~|Continuous Source Current<br>(BodyDiode)<br>~~fi~~|–––<br>~~fi~~|–––<br>~~fi~~|40<br>|A<br>~~fs~~|D<br>S<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~fs~~|
|ISM<br>~~fi~~|(odyode)<br>Pulsed Source Current<br>(Body Diode)<br>~~fi~~|–––<br>~~fi~~|–––<br>~~fi~~|160<br>|||
|VSD<br>~~fi~~<br>~~ee~~<br>~~ee~~|Diode Forward Voltage<br>~~fi~~<br>~~ee~~|–––<br>~~fi~~<br>~~ee~~|–––<br>~~fi ~~<br>~~ee~~|1.0<br> <br>~~ee~~|V<br> ~~fs~~<br>~~ee~~|TJ =25°C, IS =20A, VGS =0V<br>~~fs~~<br>~~ee~~<br>~~Sd~~|
|trr<br>~~ee~~<br>~~ee~~|Reverse Recovery Time<br>~~eeee~~|–––<br>~~ee~~|17<br>~~ee~~|26<br>~~ee~~|ns<br>~~ee~~|TJ= 25°C, IF= 20A, VDD= 15V<br>di/dt=300A/µs<br>~~ee~~<br>~~Sd~~|
|Qrr<br>~~ee~~<br>~~ee~~|Reverse Recovery Charge<br>~~eeee~~|–––<br>~~ee~~|23<br>~~ee ~~|35<br> ~~ee ~~|nC<br> ~~ee~~||



## **Thermal Resistance** 

||**Parameter**|**Typ. **|**Max.**|**Units**|
|---|---|---|---|---|
|RJC (Bottom)|Junction-to-Case|–––|3.4|°C/W|
|RJC (Top)|Junction-to-Case|–––|37||
|RJA|Junction-to-Ambient|–––|46||
|RJA (<10s)|Junction-to-Ambient|–––|31||



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1000 1000<br>VGS VGS<br>TOP           10V TOP           10V<br>8.0V 8.0V<br>4.5V 4.5V<br>3.8V 3.8V<br>3.5V 3.5V<br>3.3V 3.3V<br>100 3.0V 100 3.0V<br>BOTTOM 2.8V BOTTOM 2.8V<br>10 10 2.8V<br>2.8V<br>60µs PULSE  60µs PULSE<br>WIDTH WIDTH<br>Tj = 25°C Tj = 150°C<br>1 1<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics  Fig 2.   Typical Output Characteristics<br>1000 1.8<br>ID = 20A<br>1.6 V GS  = 10V<br>100<br>Tr): 1.4 |ite LL LLY<br>10 TJ = 150°C 1.2<br>TJ = 25°C<br>XK<br>1.0<br>1<br>0.8<br>VDS = 15V<br>60µs PULSE WIDTH<br>0.1 0.6<br>1 2 3 4 5 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics  Fig 4.   Normalized On-Resistance vs. Temperature<br>14.0<br>10000<br>VGS   = 0V,       f = 1 MHZ ID= 20A<br>Ciss   = Cgs + Cgd,  Cds SHORTED 12.0<br>C rss    = C gd  VDS= 24V<br>| Coss  = Cds + Cgd 10.0 FY VDS= 15V<br>Ciss VDS= 6.0V<br>8.0<br>1000<br>Coss 6.0<br>4.0<br>EF fe<br>Crss<br>2.0<br>a]We 0.0 Eea<br>100<br>1 10 100 0 10 20 30 40<br> QG,  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>100<br>TJ = 150°C<br>T J  = 25°C<br>10<br>VGS = 0V<br>1.0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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80<br>70<br>Limited By Package<br>60 Pop ||<br>POA<br>50<br>40<br>oN<br>30<br>20 TINS<br>se<br>10<br>0 TITITIEE\<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100 100µsec<br>1msec<br>10msec<br>DC<br>10<br>Tc = 25 ° C<br>Tj = 150°C<br>Single Pulse<br>1<br>0 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>3.0<br>2.5<br>ATT<br>i,<br>2.0<br>1.5 aT<br>ID = 50µA<br>I D  = 250µA<br>SSR<br>1.0 I D  = 1.0mA<br>ID = 1.0A Zens<br>0.5 AqLEENS<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>ID,  Drain-to-Source Current (A)<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


## **Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Threshold Voltage Vs. Temperature 

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10<br>D = 0.50 MmTL<br>1<br>sat 0.20 Mail<br>TO rr<br>0.10<br>0.05<br>er EE ll<br>0.1<br>0.010.02 Be<br>asthe<br>0.01<br>Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthjc + Tc<br>2M Neel QHEetet OUSEBALA<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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12<br>ID = 20A<br>10<br>Td<br>8<br>AEE TTT<br>6<br>TJ = 125°C<br>4<br>Neat] TJ = 25°C<br>2 Hiiteeees |  Pr<br>2 4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)<br><br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** On– Resistance vs. Gate Voltage 

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15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>W V/ 2 \/= 0V TL<br>tp 0.01<br>**----- End of picture text -----**<br>


**Fig 14a.** Unclamped Inductive Test Circuit 

**Fig 15a.** Switching Time Test Circuit 

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400<br>ID<br>TOP         5.8A<br>11A<br>on<br>300 BOTTOM 20A<br>Ty<br>200<br>100<br>~=NNC<br>0 SSSSST<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

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V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 14b.** Unclamped Inductive Waveforms 

**Fig 15b.** Switching Time Waveforms 

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**Fig 16.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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Id<br>Vds<br>Vgs<br>Vgs(th) !<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 17.** Gate Charge Test Circuit 

**Fig 18.** Gate Charge Waveform 

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## **PQFN 3.3 x 3.3 Outline “B” Package Details** 

## **PQFN 3.3 x 3.3 Outline “G” Package Details** 

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8 7 6 5<br>#1 2 3 4<br>**----- End of picture text -----**<br>


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For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.irf.com/technical info/appnotes/an 1154.pdf 

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## **PQFN 3.3 x 3.3 Part Marking** 

## INTERNATIONAL RECTIFIER LOGO 

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DATE CODE<br>—!<br>XXXX PART NUMBER<br>ASSEMBLY ~<br>SITE CODE ~ ~ ?YWW? —_ MARKING CODE<br>(Per Marking Spec)<br>(Per SCOP 200-002) XXXXX<br>**----- End of picture text -----**<br>


## LOT CODE 

## PIN 1 IDENTIFIER 

(Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

## **PQFN 3.3 x 3.3 Tape and Reel** 

**==> picture [434 x 249] intentionally omitted <==**

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REEL DIMENSIONS TAPE DIMENSIONS<br>DIMENSION (MM) DIMENSION (INCH)<br>CODE MIN MAX MIN MAX<br>Ao 3.50 3.70 .138 .146<br>Bo 3.50 3.70 .138 .146<br>Ko 1.10 1.30 .043 .051<br>P1 7.90 8.10 .311 .319<br>QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  W 11.80 12.20 .465 .480<br>W1 12.30 12.50 .484 .492<br>Qty 4000<br>Reel Diameter 13   Inches<br>CODE DESCRIPTION<br>Ao Dimension design to accommodate the component width<br>Bo Dimension design to accommodate the component lenght<br>Ko Dimension design to accommodate the component thickness<br>W Overall width of the carrier tape<br>P1 Pitch between successive cavity centers<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

8 

Submit Datasheet Feedback September 25, 2015 

www.irf.com © 2015 International Rectifier 

~~TOR Rectifier~~ 

IRFHM830PbF ~~[~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F††guidelines)||
|**Moisture Sensitivity Level**|PQFN 3.3mm x 3.3mm|MSL1<br>(per JEDEC J-STD-020D††)|
|**RoHS Compliant**|Yes||



- 

- † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product info/reliability †† Applicable version of JEDEC standard at the time of product release. 

## **Notes:** 

-   Repetitive rating;  pulse width limited by max. junction temperature. 

-    Starting TJ = 25°C, L = 0.41mH, RG = 50, IAS = 12A. 

-  Pulse width  400µs; duty cycle  2%. 

-   R is measured at TJ of approximately 90°C. 

-   When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details: 

   - - 

   - http://www.irf.com/technical info/appnotes/an 994.pdf 

-  Calculated continuous current based on maximum allowable junction temperature. Package is limited to 40A by production test capability. 

|**Revision History**|**Revision History**|
|---|---|
|**Date**|**Comments**|
|12/16/2013|Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option  (EOL notice #259)<br>Updated data sheetwith new IRcorporate template|
|6/6/2014|Updated  schematic on page1<br>Updated part marking on page 7.<br>UpdatedTape andReelonpage 8.|
|9/25/2015|Updated package outline to reflect the PCN # (67-PCN90-Public-R2) for “option B” and added<br>package outline for “option G” on page 7<br>Updated"IFX"logo on all pages.<br>9/25/2015|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

9 

Submit Datasheet Feedback September 25, 2015 

www.irf.com © 2015 International Rectifier 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFHM830TRPBF/power-mosfet-n-channel-30-v-40-a-3800-ohm-qfn)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfhm830trpbf/mosfet-n-ch-diode-30v-40a-pqfn33/dp/1857346)
---

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