# Power MOSFET, N Channel, 25 V, 19 A, 0.0042 ohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:2577165/)

**URL**: https://novapart.co/products/IRFHM8228TRPBF/power-mosfet-n-channel-25-v-19-a-00042-ohm-pqfn
**SKU**: IRFHM8228TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1760
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 2.8W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 2.8W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0042ohm |
| Transistor Case Style | PQFN |
| Drain Source Voltage Vds | 25V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 19A |
| Drain Source On State Resistance | 0.0042ohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2577165/)

IRFHM8228PbF ~~—~~ 

## ~~Cinfin eon~~ 

|**VDSS**|**25**|**V**|
|---|---|---|
|**VGSmax**|**±20**|**V**|
|**RDS(on)max**<br>(@ VGS=10V)|**5.2**|**m**|
|(@VGS= 4.5V)|**8.7**||
|**Qg (typical)**|**9.0**|**nC**|
|**ID**<br>**(@TC (Bottom) = 25°C)**|**25**|**A**|



## HEXFET[® ] Power MOSFET 

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S  [G ]<br>S<br>S<br>D<br>D<br>D<br>D<br>D<br>PQFN 3.3X3.3 mm<br>**----- End of picture text -----**<br>


## **Applications** 

Control or synchronous MOSFET for synchronous buck converter 

## **Benefits** 

|**Features**||||||**Benefits**|**Benefits**|**Benefits**||
|---|---|---|---|---|---|---|---|---|---|
|Low Thermal Resistance to PCB (|Low Thermal Resistance to PCB (<3.7°C/W)|||||Enable better thermal dissipation||||
|Low Profile (<1.05 mm)|1.05 mm)|||||Increased Power Density||||
|Industry-Standard Pinout||||results inMulti||Multi-Vendor Compatibility||||
|Compatible with Existing Surface Mount Techniques|Compatible with Existing Surface Mount Techniques|Compatible with Existing Surface Mount Techniques|Compatible with Existing Surface Mount Techniques|Compatible with Existing Surface Mount Techniques <br>||Easier Manufacturing||||
|RoHS Compliant, Halogen-Free||||||Environmentally Friendlier||||
|MSL1, ConsumerQualification||||||IncreasedReliability||||
|||||||||||
|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Form**<br>**Quantity**<br>IRFHM8228PbF<br>PQFN 3.3 mm x 3.3 mm<br>Tape and Reel<br>4000<br>IRFHM8228TRPbF<br>**Orderable Part Number**<br>~~eee~~||||||||||
|**Absolute Maximum Ratings**||||||||||
||**Parameter**||**Parameter**|||||**Max.**|**Units**|
|VGS|Gate-to-Source Voltage|||||||± 20|V|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V||@ 10V|||||19||
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V||@ 10V|||||15||
|ID@ TC(Bottom)= 25°C|Continuous Drain Current, VGS@ 10V||@ 10V|||||65||
|ID@ TC(Bottom)= 100°C|Continuous Drain Current, VGS@ 10V||@ 10V|||||41|A|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V<br>(Source BondingTechnologyLimited)|||||||25||
|IDM|Pulsed Drain Current|||||||260||
|PD@TA= 25°C<br>PD@TC(Bottom)= 25°C|Power Dissipation<br>Power Dissipation|||||||2.8<br>34|W|
||Linear Derating Factor|||||||0.023|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|||||||-55  to + 150|°C|



Notes  through  are on page 10 

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|**Static@ TJ = 25°C(unless otherwise specified)**|
|---|
|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Units**<br>**Conditions**<br>BVDSS<br>Drain-to-Source Breakdown Voltage<br>25<br>–––<br>–––<br>V<br>VGS =0V, ID =250µA<br>~~es~~<br>~~I FS (OU~~<br>~~QO~~<br>~~GO~~<br>~~es~~<br>~~I~~<br>~~ID (OR QO~~|
|BVDSS/TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>18<br>–––<br>mV/°C Reference to 25°C,ID= 1mA|
|RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>4.2<br>5.2<br>m<br>VGS= 10V,ID= 20A<br>–––<br>6.7<br>8.7<br>VGS= 4.5V,ID= 16A<br>VGS(th)<br>GateThresholdVoltage<br>1.35<br>1.8<br>2.35<br>V<br>VDS= VGS, ID= 25µA<br>VGS(th)<br>Gate Threshold Voltage Coefficient<br>–––<br>-6.6<br>–––<br>mV/°C<br>~~ft~~|
|IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>1.0<br>VDS= 20V,VGS= 0V<br>–––<br>–––<br>150<br>VDS =20V, VGS =0V, TJ =125°C<br>IGSS<br>Gate-to-SourceForwardLeakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS = -20V<br>gfs<br>ForwardTransconductance<br>63<br>–––<br>–––<br>S<br>VDS= 10V,ID= 20A<br>Qg<br>Total Gate Charge<br>–––<br>18<br>–––<br>nC<br>VGS =10V, VDS =13V, ID =20A<br>Qg<br>TotalGate Charge<br>–––<br>9.0<br>14<br>Qgs1<br>Pre-Vth Gate-to-Source Charge<br>–––<br>2.7<br>–––<br>VDS= 13V<br>Qgs2<br>Post-VthGate-to-Source Charge<br>–––<br>1.0<br>–––<br>nC<br>VGS= 4.5V<br>µA<br>~~BO~~<br>~~a~~<br>~~Gs~~<br>~~PO~~<br>~~rr~~<br>~~esee~~|
|Qgd<br>Gate-to-Drain Charge<br>–––<br>3.1<br>–––<br>ID= 20A<br>Qgodr<br>Gate Charge Overdrive<br>–––<br>2.2<br>–––<br>Qsw<br>Switch Charge(Qgs2+Qgd)<br>–––<br>4.1<br>–––<br>Qoss<br>Output Charge<br>–––<br>9.7<br>–––<br>nC<br>VDS= 16V,VGS=0V<br>~~————————————~~<br>~~ee~~<br>~~es~~<br>~~I GD (OO~~<br>~~QO~~|
|RG<br>Gate Resistance<br>–––<br>1.7<br>–––<br>|
|td(on)<br>Turn-On Delay Time<br>–––<br>11<br>–––<br>VDD= 13V, VGS= 4.5V<br>tr<br>RiseTime<br>–––<br>22<br>–––<br>ns<br>ID= 20A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>13<br>–––<br>RG=1.8<br>tf<br>Fall Time<br>–––<br>6.2<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>1667<br>–––<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>456<br>–––<br>pF<br>VDS= 10V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>195<br>–––<br>ƒ= 1.0MHz<br>~~esns~~<br>~~———————~~<br>~~ee~~<br>~~————————————~~<br>~~a~~<br>~~ne~~|
|**Avalanche Characteristics**|
|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>EAS<br>Single Pulse Avalanche Energy<br>–––<br>50<br>mJ<br>~~—_———————————~~|
|**Diode Characteristics**|
|D<br>S<br>G<br>**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>25<br>A<br>MOSFET symbol<br>(BodyDiode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>260<br>integral reverse<br>(BodyDiode) <br>p-njunctiondiode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.0<br>V<br>TJ =25°C, IS =20A, VGS =0V<br>trr<br>Reverse Recovery Time<br>–––<br>14<br>21<br>nsTJ= 25°C, IF= 20A, VDD= 13V<br>Qrr<br>Reverse Recovery Charge<br>–––<br>10<br>15<br>nC di/dt=260A/µs<br>~~es~~<br>~~I I I GO~~<br>~~rr~~<br>~~re~~<br>~~aa~~<br>~~a~~<br>~~II ID OG(OR (I~~<br>~~pf~~<br>~~+ ++ +f~~<br>~~esen~~|
|**Thermal Resistance**|
|**Parameter**<br>**Typ. **<br>**Max.**<br>**Units**|
|RJC (Bottom)Junction-to-Case<br>–––<br>3.7|
|RJC (Top)<br>Junction-to-Case<br>–––<br>41<br>°C/W|
|RJA<br>Junction-to-Ambient<br>–––<br>44|
|RJA (<10s)<br>Junction-to-Ambient<br>–––<br>29|



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1000<br>VGS<br>TOP           10V<br>7.0V<br>100 4.5V<br>4.0V<br>3.5V<br>3.0V<br>2.75V<br>10 BOTTOM 2.5V<br>1<br>0.1 2.5V<br>60µs PULSE WIDTH<br>Tj = 25°C<br>0.01<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>100 | ee<br>10 T J = 150°C<br>TJ = 25°C<br>1 fePj<br>VDS = 10V<br>60µs PULSE WIDTH<br>0.1 ff<br>0 2 4 6 8<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds SHORTED<br>C rss    = C gd<br>Coss   = Cds + Cgd<br>C iss<br>1000<br>Tet | | Il<br>Coss<br>ni<br>Crss<br>Hillis<br>i<br>100<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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1000<br>VGS<br>TOP           10V<br>7.0V<br>4.5V<br>4.0V<br>3.5V<br>3.0V<br>100 2.75V<br>BOTTOM 2.5V<br>10<br>2.5V<br>60µs PULSE WIDTH<br>Tj = 150°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>1.8<br>ID = 20A<br>1.6 V GS  = 10V<br>TOIL<br>1.4<br>1.2<br>1.0<br>TeerA |<br>0.8<br>0.6 PECeee<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>Fig 4.   Normalized On-Resistance vs. Temperature<br>14.0<br>ID= 20A<br>12.0 V DS = 20V<br>VDS= 13V<br>10.0 V DS = 5.0V<br>8.0<br>GF<br>6.0<br>4.0 a7/4nn<br>2.0 Ce<br>0.0 2<br>0 5 10 15 20 25<br> QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 3 ~~=-—~~ 

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## ~~Cinfineon~~ 

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1000<br>100<br>TJ = 150°C<br>SESE e<br>10<br>TJ = 25°C<br>1<br>V GS  = 0V<br>0.1 SHARE<br>0.0 0.4 0.8 1.2 1.6 2.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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70<br>60 Limited by source<br>bonding technology <br>50<br>|<br>40 Pp<br>30<br>20<br>TL<br>10<br>TA<br>0<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>100µsec<br>10<br>Limited by source bonding<br>technology <br>1 1msec<br>10msec<br>0.1 Tc = 25°C<br>Tj = 150°C DC<br>Single Pulse<br>0.01<br>| if<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>3.0<br>2.5<br>|e<br>2.0<br>RSA Pe<br>1.5 I D = 25µA<br>ID = 250µA<br>I D  = 1.0mA<br>1.0 ID = 1.0A<br>ALLENS<br>LELEL<br>0.5<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>ID,  Drain-to-Source Current (A)<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Drain-to–Source Breakdown Voltage 

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10<br>D = 0.50 Loo<br>1<br>0.20<br>Se<br>0.10<br>0.05<br>Se eT EEE ll<br>0.1 0.02<br>te 0.01 i MUA A BG SG<br>0.01<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 GU rerertt net || Het ||eed<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 11.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>Thermal Response ( Z  thJC ) °C/W<br>**----- End of picture text -----**<br>


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18 200<br>ID = 20A ID<br>TOP         4.4A<br>160 9.2A<br>14<br>BOTTOM 20A<br>Le 120 \efe<br>10 ATT) = PAGE<br>80<br>TJ = 125°C<br>Nth ONT<br>6<br>40<br>Ae DSN<br>TJ = 25°C<br>2 PSS 0 PSS<br>2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 12.   On-Resistance vs. Gate Voltage  Fig 13.   Maximum Avalanche Energy vs. Drain Current<br>100<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 125°C and<br>Tstart =25°C (Single Pulse)<br>10 011 etCn<br>Ser ani Saul Geet<br>Allowed avalanche Current vs avalanche<br>1 pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 125°C.<br>ea a i<br>cmc TT<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02<br>tav (sec)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>) <br>RDS(on),  Drain-to -Source On Resistance (m<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

**Fig 14.** Single Avalanche Event: Pulse Current vs. Pulse Width 

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**Fig 15.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>20V JL IAS<br>tp 0.01<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17a.** Switching Time Test Circuit 

**Fig 17b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>|<br>Vgs(th) '<br>i} ' 1 '<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 18a.** Gate Charge Test Circuit 

**Fig 18b.** Gate Charge Waveform 

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## **Placement and Layout Guidelines** 

The typical application topology for this product is the synchronous buck converter. These converters operate at high frequencies (typically around 400 kHz). During turn-on and turn-off switching cycles, the high di/dt currents circulating in the parasitic elements of the circuit induce high voltage ringing which may exceed the device rating and lead to undesirable effects. One of the major contributors to the increase in parasitics is the PCB power circuit inductance. 

This section introduces a simple guideline that mitigates the effect of these parasitics on the performance of the circuit and provides reliable operation of the devices. 

To reduce high frequency switching noise and the effects of Electromagnetic Interference (EMI) when the control MOSFET (Q1) is turned on, the layout shown in Figure 19 is recommended. The input bypass capacitors, control MOSFET and output capacitors are placed in a tight loop to minimize parasitic inductance which in turn lowers the amplitude of the switch node ringing, and minimizes exposure of the MOSFETs to repetitive avalanche conditions. 

**Fig 19.** Placement and Layout Guidelines 

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## **PQFN 3.3 x 3.3 Outline “C” Package Details** 

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8 7 6 5<br>1 2 3 4<br>**----- End of picture text -----**<br>


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1 2 3 4<br>8 7 6 5<br>**----- End of picture text -----**<br>


## **PQFN 3.3 x 3.3 Outline “G” Package Details** 

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8 7 6 5<br>#1 2 3 4<br>**----- End of picture text -----**<br>


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#1 2 3 4<br>8 7 6 5<br>**----- End of picture text -----**<br>


For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.irf.com/technical info/appnotes/an 1154.pdf 8 2016-2-23 ~~——~~ 

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## **PQFN 3.3mm x 3.3mm Outline Part Marking** 

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INTERNATIONAL<br>RECTIFIER LOGO<br>NN<br>DATE CODE<br>XXXX PART NUMBER<br>ASSEMBLY ~<br>SITE CODE ?YWW? MARKING CODE<br>(Per Marking Spec)<br>(Per SCOP 200-002) XXXXX<br>»\ LOT CODE<br>PIN 1 (Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>IDENTIFIER<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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PQFN 3.3mm x 3.3mm Outline Tape and Reel<br>**----- End of picture text -----**<br>


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REEL DIMENSIONS TAPE DIMENSIONS<br>DIMENSION (MM) DIMENSION (INCH)<br>CODE MIN MAX MIN MAX<br>Ao 3.50 3.70 .138 .146<br>Bo 3.50 3.70 .138 .146<br>Ko 1.10 1.30 .043 .051<br>P1 7.90 8.10 .311 .319<br>QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  W 11.80 12.20 .465 .480<br>W1 12.30 12.50 .484 .492<br>Qty 4000<br>Reel Diameter 13   Inches<br>=<br>CODE DESCRIPTION<br>Ao Dimension design to accommodate the component width<br>Bo Dimension design to accommodate the component lenght<br>Ko Dimension design to accommodate the component thickness<br>W Overall width of the carrier tape<br>P1 Pitch between successive cavity centers<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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|<br>IRFHM8228PbF<br>infineon~~OO~~|<br>IRFHM8228PbF<br>infineon~~OO~~|<br>IRFHM8228PbF<br>infineon~~OO~~|
|---|---|---|
||**Qualification Information† **||
||**Qualification Level**|Consumer††<br>(per JEDEC JESD47F†††guidelines)|
||**Moisture Sensitivity Level**|PQFN 3.3mm x 3.3mm<br>MSL1<br>(per JEDEC J-STD-020D††)|
||**RoHS Compliant**|Yes|



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability 

- †† Higher qualification ratings may be available should the user have such requirements. Please contact your 

- 

- International Rectifier representative for further information: http://www.irf.com/whoto call/salesrep/ 

- †††  Applicable version of JEDEC standard at the time of product release. 

## **Notes:** 

- Repetitive rating;  pulse width limited by max. junction temperature. 

- Starting TJ = 25°C, L = 0.25mH, RG = 50, IAS = 20A. 

- Pulse width  400µs; duty cycle  2%. 

-   R is measured at TJ of approximately 90°C. 

- When mounted on 1 inch square  2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Please refer to AN-994 

- for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf 

- Calculated continuous current based on maximum allowable junction temperature. 

-  Current is limited to 25A by source bonding technology. 

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2016-2-23 

|<br>IRFHM8228PbF<br>infineon~~OO~~|<br>IRFHM8228PbF<br>infineon~~OO~~|<br>IRFHM8228PbF<br>infineon~~OO~~|<br>IRFHM8228PbF<br>infineon~~OO~~|<br>IRFHM8228PbF<br>infineon~~OO~~|
|---|---|---|---|---|
||**Revision History**||||
||**Date**||**Comments**||
||||Updated schematic  on page 1.||
||6/5/2014||Updated part marking on page 8.||
||||Updated tape and reel onpage 9.||
||6/30/2014||Remove “SAWN” package outline on page 8.||
||||Updated datasheet with corporate template||
||2/23/2016||Updated package outline to reflect the PCN # (241-PCN30-Public) for “Option C” and||
|||“O|“Option G ” onpage 8.||



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

11 2016-2-23 ~~ee~~ 

2016-2-23 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFHM8228TRPBF/power-mosfet-n-channel-25-v-19-a-00042-ohm-pqfn)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irfhm8228trpbf/mosfet-n-ch-25v-19a-pqfn-8/dp/2577165)
---

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