# Power MOSFET, N Channel, 100 V, 3.2 A, 0.115 ohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:2577197/)

**URL**: https://novapart.co/products/IRFHM3911TRPBF/power-mosfet-n-channel-100-v-32-a-0115-ohm-pqfn
**SKU**: IRFHM3911TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2410
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.8W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PQFN |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.2A |
| Drain Source On State Resistance | 0.115ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2577197/)

## ~~Gafineon~~ 

## IRFHM3911TRPbF ~~—~~[[® ]] 

## HEXFET[[® ]] Power MOSFET 

|**VDSS**|**100**|**V**|
|---|---|---|
|**RDS(on)max**<br>(@VGS= 10V)|**115**|**m**|
|**Qg (typical)**|**17**|**nC**|
|**ID**<br>**(@TC (Bottom) = 25°C)**|**11**|**A**|



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S  [G ]<br>S<br>S<br>D<br>D<br>D<br>D<br>D<br>PQFN 3.3X3.3 mm<br>**----- End of picture text -----**<br>


## **Applications** 

 POE+ Power Sourcing Equipment Switch 

|**Features**||**Benefits**|
|---|---|---|
|Large Safe Operating Area (SOA)||Increased Ruggedness|
|Low Thermal Resistance to PCB||Enable better thermal dissipation|
|Low Profile (<1.05mm)||Increased Power Density|
|Industry-Standard Pinout|results inMulti|Multi-Vendor Compatibility|
|Compatible with Existing Surface Mount Techniques|Compatible with Existing Surface Mount Techniques <br>|Easier Manufacturing|
|RoHS Compliant, Halogen-Free||Environmentally Friendlier|
|MSL1, Industrial Qualification||Increased Reliability|



|**Base part number**<br>~~pf~~|**Package Type**<br>~~pf~~|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRFHM3911PbF<br>~~pf~~|PQFN 3.3mm x 3.3mm<br>~~pf~~|Tape and Reel|4000|IRFHM3911TRPbF|



## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VGS|Gate-to-Source Voltage|± 20|V|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|3.2|A|
|ID@ TC(Bottom)= 25°C|Continuous Drain Current, VGS@ 10V|11||
|ID@ TC(Bottom)= 100°C|Continuous Drain Current, VGS@ 10V|6.6||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V<br>(Source Bonding Technology Limited)|20||
|IDM|Pulsed Drain Current|36||
|PD@TA= 25°C|Power Dissipation|2.8|W|
|PD@TC(Bottom)= 25°C|Power Dissipation|29||
||Linear Derating Factor|0.023|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|



Notes  through  are on page 9 

1 2016-2-23 ~~_=-CUC~*~*~*~*~t~tCOTTTTTTTTTTTTUOOO~~ 

~~Cinfineon~~ 

IRFHM3911TRPbF ~~I~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Static @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|**Static @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|**Static @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|**Static @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|**Static @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|**Static @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|
|---|---|---|---|---|---|
|**Parameter**<br>**Min.**<br>**Typ. **<br>**Max.**<br>**Units**<br>**Conditions**<br>BVDSS<br>Drain-to-Source Breakdown Voltage<br>100<br>–––<br>–––<br>V<br>VGS= 0V,ID= 250µA<br>BVDSS/TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>111<br>–––<br>mV/°C Reference to 25°C,ID= 1mA<br>~~ee~~<br>~~I GD I UD (OO (OO~~<br>~~ee~~<br>~~ID I~~<br>~~IS(I (~~<br>~~esnD~~<br>~~ID I (ID (OO~~||||||
|RDS(on)<br>Static Drain-to-Source On-Resistance|–––<br>92|115||m|VGS= 10V,ID= 6.3A|
|VGS(th)<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>VDS= VGS, ID= 35µA<br>VGS(th)<br>Gate Threshold Voltage Coefficient<br>–––<br>-7.6<br>–––<br>mV/°C<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>VDS= 100V,VGS= 0V<br>–––<br>–––<br>250<br>VDS= 80V,VGS= 0V,TJ=125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>gfs<br>Forward Transconductance<br>20<br>–––<br>–––<br>S<br>VDS= 25V,ID= 6.3A<br>Qg<br>Total Gate Charge<br>–––<br>17<br>26<br>Qgs1<br>Pre-Vth Gate-to-Source Charge<br>–––<br>2.5<br>–––<br>VDS= 50V<br>Qgs2<br>Post-Vth Gate-to-Source Charge<br>–––<br>1.4<br>–––<br>nC<br>VGS= 10V<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>5.4<br>–––<br>ID= 6.3A<br>Qgodr<br>Gate Charge Overdrive<br>–––<br>7.7<br>–––<br>Qsw<br>Switch Charge(Qgs2+Qgd)<br>–––<br>6.8<br>–––<br>Qoss<br>Output Charge<br>–––<br>5.9<br>–––<br>nC<br>VDS= 16V,VGS= 0V<br>RG<br>Gate Resistance<br>–––<br>3.8<br>–––<br><br>td(on)<br>Turn-On DelayTime<br>–––<br>5.0<br>–––<br>VDD= 50V, VGS= 10V<br>tr<br>Rise Time<br>–––<br>5.8<br>–––<br>ns<br>ID= 6.3A<br>µA<br>~~pf st tH~~<br>~~e~~~~**e** ee~~<br>~~ee PO~~<br>~~f~~<br>~~ee ES EE~~<br>~~ss~~<br>~~ee~~<br>~~I (tS I UD (OU (OO~~<br>~~a nn~~<br>~~ee~~<br>~~a nn~~<br>~~I I fo~~<br>~~a~~<br>~~ee~~<br>~~I GD I~~<br>~~nD (RU (~~<br>~~a~~<br>~~IS I I (OS (OU~~<br>~~nn~~<br>~~I~~<br>~~ee~~||||||
|td(off)<br>Turn-Off DelayTime|–––<br>16|–––|||RG=1.8|
|tf<br>Fall Time|–––<br>5.1|–––||||
|Ciss<br>Input Capacitance<br>~~a~~|–––<br>760|–––|||VGS= 0V|
|Coss<br>Output Capacitance|–––<br>73|–––||pF|VDS= 50V|
|Crss<br>Reverse Transfer Capacitance|–––<br>13|–––|||ƒ= 1.0MHz|
|**Avalanche Characteristics**||||||
|**Parameter**||**Typ. **|||**Max.**|
|EAS<br>Single Pulse Avalanche Energy ||–––|||41|
|IAR<br>Avalanche Current||–––|||6.3|
|**Diode Characteristics**||||||
|**Parameter**<br>IS<br>Continuous Source Current<br>(BodyDiode)<br>ISM<br>Pulsed Source Current<br>(BodyDiode) <br>~~ee~~<br>~~I ~~|**Min.**<br>**Typ. **<br>–––<br>–––<br>–––<br>–––<br> ~~(S(O~~|D<br>S<br>G<br>**Max.**<br>**Units**<br>**Conditions**<br>11<br>A<br>MOSFET symbol<br>showing  the<br>36<br>integral reverse<br>p-njunction diode.<br>~~UD(QO~~<br>~~||~~<br>~~&~~||||
|VSD<br>Diode Forward Voltage|–––<br>–––|1.3||V|TJ= 25°C,IS= 6.3A,VGS= 0V|
|trr<br>Reverse RecoveryTime<br>–––<br>47<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>381<br>~~a$f~~<br>~~ss~~||71<br>571||ns<br>nC|TJ= 25°C, IF= 6.3A, VDD= 50V<br>di/dt = 500A/µs|
|**Thermal Resistance**||||||
|**Parameter**||**Typ. **|||**Max.**<br>**Units**|
|RJC (Bottom)Junction-to-Case||||–––|4.3|
|RJC (Top)<br>Junction-to-Case||||–––|40<br>°C/W|
|RJA<br>Junction-to-Ambient||||–––|45|
|RJA (<10s)<br>Junction-to-Ambient||||–––|31|
|2<br>2016-2-23<br>~~ne~~||||||



IRFHM3911TRPbF 

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100 100<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V 6.0V<br>10 5.0V 10 5.0V<br>4.5V 4.5V<br>BOTTOM 4.0V iat BOTTOM 4.0V Sail<br>4.0V<br>1 ; 1<br>60µs PULSE WIDTH<br>Tj = 25°C<br>4.0V Soe 60µs PULSE WIDTH<br>Tj = 150°C<br>0.1 0.1<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics  Fig 2.   Typical Output Characteristics<br>100 2.5<br>ID = 6.5A<br>VGS = 10V<br>2.0<br>10 TaAen Coe;<br>TJ = 150°C<br>1.5<br>1 VAT HAL<br>TJ = 25°C<br>1.0<br>H V DS  = 50V TAT<br>60µs PULSE WIDTH<br>0.1 PRL 0.5<br>| eer<br>3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig 3.   Typical Transfer Characteristics  Fig 4.   Normalized On-Resistance vs. Temperature<br>10000 14.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = Cgs  + Cgd,  Cds  SHORTED ID= 6.3A VDS= 80V<br>C rss    = C gd  12.0 VDS= 50V<br>Coss   = Cds  + Cgd 10.0 V DS = 20V<br>1000<br>Ciss<br>Coss 8.0<br>C rss 6.0<br>100<br>Sf Gt| 4.0 son<br>2.0<br>UT ATT<br>10 SUING = 0.0  (ARE<br>1 10 100 0 5 10 15 20 25<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance vs. Drain-to-Source Voltage  Fig 6.   Typical Gate Charge vs. Gate-to-Source Voltage<br>3  2016-2-23<br>EE<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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IRFHM3911TRPbF 

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100 100<br>10<br>TJ = 150°C<br>10 7) AS<br>100µsec<br>1 10msec<br>1msec<br>TJ = 25°C OPERATION IN THIS AREA<br>1 LIMITED BY R DS (on)<br>0.1<br>Tc = 25°C<br>Tj = 150 ° C DC<br>V GS  = 0V Single Pulse<br>0.1 ff 0.01 apie<br>0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS,  Drain-toSource Voltage (V)<br>Fig 7.   Typical Source-Drain Diode Forward Voltage  Fig 8.   Maximum Safe Operating Area<br>12 4.5<br>10 4.0<br>~ | | | | PRRREREEE<br>8 3.5<br>PN Pt] Pree<br>6 3.0<br>PN ESS<S00nn<br>ID = 35µA<br>4 2.5 I D  = 250µA<br>pF LN | ID = 1.0mA SSR<br>2 2.0 ID = 1.0A<br>| | TN i BBBNS<br>0 1.5<br>|| Tt ft FTITTILLRS<br>-75 -50 -25 0 25 50 75 100 125 150<br>25 50 75 100 125 150<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A)<br>-ID,  Drain Current (A)<br>ID,  Drain-to-Source Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Drain-to-Source Breakdown Voltage 

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10<br>Ui<br>D = 0.50<br>1 0.20<br>0.10<br>0.05<br>0.1 0.02<br>S seer<br>0.01<br>0.01 ipo SINGLE PULSE |<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>| ne<br>0.001<br>all |<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 11.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>4  2016-2-23<br>°°.<br>=<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


IRFHM3911TRPbF 

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400 200<br>ID = 6.3A ID<br>350 TOP         1.4A<br>160                  2.7A<br>BOTTOM   6.3A<br>300<br>rm ..<br>120<br>250<br>Yi} | te | \<br>T = 125°C<br>J<br>200<br>NOT 80 ENE<br>150<br>TJ = 25°C 40<br>100 RoE ANT<br>50 SCL 0 SSS<br>4 8 12 16 20 25 50 75 100 125 150<br>VGS, Gate-to-Source Voltage (V) Starting TJ , Junction Temperature (°C)<br>)<br><br>RDS(on),  Drain-to -Source On Resistance (m EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12.** On– Resistance vs. Gate Voltage 

**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

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100<br>Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>10<br>1<br>CO ea<br>0.1 ATT Allowed avalanche Current vs avalanche  Pe eT<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 125°C.<br>0.01<br>1.0E-06 ee 1.0E-05 1.0E-04 eel 1.0E-03 meal 1.0E-02 meal 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 14.** Typical Avalanche Current vs. Pulsewidth 

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Cinfi 

## IRFHM3911TRPbF 

**Fig 15.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>tp 0.01<br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

**Fig 17a.** Switching Time Test Circuit 

**Fig 18.** Gate Charge Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>< tp ><br>Fig 16b.   Unclamped Inductive Waveforms<br>90% |7 |<br>|<br>10% | ) /[\<br>GS she si<br>ta(on) tr ta(ott) tf<br>Fig 17b.   Switching Time Waveforms<br>Id<br>Vds<br>Vgs<br>|<br>' Hl<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17b.** Switching Time Waveforms 

**Fig 19.** Gate Charge Waveform 

6 

2016-2-23 

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IRFHM3911TRPbF ~~I~~ 

## **PQFN 3.3 x 3.3 Outline “C” Package Details** 

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**----- Start of picture text -----**<br>
8 7 6 5<br>1 2 3 4<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1 2 3 4<br>8 7 6 5<br>**----- End of picture text -----**<br>


## **PQFN 3.3 x 3.3 Outline “G” Package Details** 

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**----- Start of picture text -----**<br>
8 7 6 5<br>#1 2 3 4<br>#1 2 3 4<br>8 7 6 5<br>**----- End of picture text -----**<br>


For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.irf.com/technical info/appnotes/an 1154.pdf 

7 ~~=~~ 

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## **PQFN 3.3 x 3.3 Part Marking** 

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INTERNATIONAL<br>RECTIFIER LOGO<br>~<br>DATE CODE<br>XXXX PART NUMBER<br>ASSEMBLY<br>SITE CODE ?YWW? ~ _ MARKING CODE<br>(Per Marking Spec)<br>(Per SCOP 200-002) XXXXX<br>® \ LOT CODE<br>PIN 1 (Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>IDENTIFIER<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ **PQFN 3.3 x 3.3 Tape and Reel** 

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REEL DIMENSIONS TAPE DIMENSIONS<br>DIMENSION (MM) DIMENSION (INCH)<br>CODE MIN MAX MIN MAX<br>Ao 3.50 3.70 .138 .146<br>Bo 3.50 3.70 .138 .146<br>Ko 1.10 1.30 .043 .051<br>P1 7.90 8.10 .311 .319<br>QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  W 11.80 12.20 .465 .480<br>W1 12.30 12.50 .484 .492<br>Qty 4000<br>Reel Diameter 13   Inches<br>=><br>CODE DESCRIPTION<br>Ao Dimension design to accommodate the component width<br>Bo Dimension design to accommodate the component lenght<br>Ko Dimension design to accommodate the component thickness<br>W Overall width of the carrier tape<br>P1 Pitch between successive cavity centers<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2016-2-23 ~~re~~ 

~~Cinfineon~~ 

IRFHM3911TRPbF ~~I~~ 

**Qualification Information[† ]** 

Industrial **Qualification Level** (per JEDEC JESD47F[††] guidelines) MSL1 **Moisture Sensitivity Level** PQFN 3.3mm x 3.3mm (per JEDEC J-STD-020D[††)] **RoHS Compliant** Yes ~~7~~ - † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product info/reliability †† Applicable version of JEDEC standard at the time of product release. 

## **Notes:** 

-  Repetitive rating;  pulse width limited by max. junction temperature. 

-   Starting TJ = 25°C, L = 2.06mH, RG = 50, IAS = 6.3A. 

-  Pulse width  400µs; duty cycle  2%. 

-   R is measured at TJ of approximately 90°C. 

-   When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details: - - 

- http://www.irf.com/technical info/appnotes/an 994.pdf 

-   Calculated continuous current based on maximum allowable junction temperature. 

-  Current is limited to 20A by source bonding technology. 

9 2016-2-23 ~~ee~~ 

IRFHM3911TRPbF 

|<br>IRFHM3911TRPbF<br>**Revision History**<br>infineon~~_O~~|<br>IRFHM3911TRPbF<br>**Revision History**<br>infineon~~_O~~|<br>IRFHM3911TRPbF<br>**Revision History**<br>infineon~~_O~~|<br>IRFHM3911TRPbF<br>**Revision History**<br>infineon~~_O~~|<br>IRFHM3911TRPbF<br>**Revision History**<br>infineon~~_O~~|<br>IRFHM3911TRPbF<br>**Revision History**<br>infineon~~_O~~|
|---|---|---|---|---|---|
||**Date**||**Comments**|||
||6/5/2014||Updated schematic  on page 1|||
||||Updated tape and reel onpage 8|||
||7/1/2014||Remove “SAWN” package outline on page 7.|||
||||Updated datasheet with corporate template|||
||2/23/2016||Updated package outline to reflect the PCN # (241-PCN30-Public) for “Option C” and|||
|||“Option G” on page 7.|“Option G” on page 7.|||



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

10 2016-2-23 ~~ee~~ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFHM3911TRPBF/power-mosfet-n-channel-100-v-32-a-0115-ohm-pqfn)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfhm3911trpbf/mosfet-n-ch-100v-3-2a-pqfn-8/dp/2577197)
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