# Power MOSFET, N Channel, 30 V, 100 A, 1300 µohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:3958715/)

**URL**: https://novapart.co/products/IRFH8307TRPBF/power-mosfet-n-channel-30-v-100-a-1300-ohm-pqfn
**SKU**: IRFH8307TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6170
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | StrongIRFET Series |
| Qualification | - |
| Power Dissipation | 156W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PQFN |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 1300µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3958715/)

Strong _IR_ FET™ IRFH8307TRPbF 

**VDSS 30 V RDS(on) max 1.3 m**  (@ VGS = 10V) **Qg (typical) 50 nC Rg (typical) 1.3**  **ID 275 A (@TC (Bottom) = 25°C)** ~~oe~~ 

## **Applications** 

PQFN 5X6 mm ‘e 

 OR-ing MOSFET for 12V (typical) Bus in-Rush Current 

-  Battery Operated DC Motor Inverters 

**Features Benefits** Low RDSon (<1.3m) Lower Conduction Losses Low Thermal Resistance to PCB (<0.8°C/W) Enable better thermal dissipation Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout  Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VGS|Gate-to-Source Voltage|± 20|V|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|42|A|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V|33||
|ID@ TC (Bottom)= 25°C|Continuous Drain Current, VGS@ 10V|275||
|ID@ TC (Bottom)= 100°C|Continuous Drain Current, VGS@ 10V|174||
|IDM|Pulsed Drain Current|1100||
|PD@TA= 25°C|Power Dissipation|3.6|W|
|PD@TC (Bottom)= 25°C|Power Dissipation|156||
||Linear Derating Factor|0.029|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|



Notes  through   are on page 9 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||||~~GO~~||||
|---|---|---|---|---|---|---|
|~~GD~~|**Parameter**<br>~~GD~~|**Min.**<br>~~GD~~|**Typ. **<br>~~GD~~<br>~~GO~~|**Max.**<br>~~GD~~|**Units**<br>~~GD~~|**Conditions**<br>~~GD~~|
|BVDSS<br>~~ee~~|Drain-to-Source Breakdown Voltage<br>~~ee~~|30<br>~~ee~~|–––<br>~~GO~~<br>~~ee~~|–––<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= 250µA<br>~~ee~~|
|BVDSS/TJ<br>~~ee~~|Breakdown Voltage Temp. Coefficient<br>~~ee~~|–––<br>~~ee~~|0.02<br>~~ee~~|–––<br>~~ee~~|V/°C Reference to 25°C, I<br>~~ee~~|V/°C Reference to 25°C, ID= 1mA<br>~~ee~~|
|RDS(on)<br>~~ee~~|Static Drain-to-Source On-Resistance<br>~~ee~~|–––<br>~~ee~~|1.1<br>~~ee~~|1.3<br>~~ee~~|m<br>|VGS= 10V,ID= 50A<br>~~ee~~|
|||–––<br>~~ee~~|1.7<br>~~ee~~|2.1<br>~~ee~~||VGS= 4.5V,ID= 50A<br>~~ee~~<br>~~ee~~|
|VGS(th)<br>~~is~~|Gate Threshold Voltage<br>~~is~~|1.35<br>~~is~~|1.80<br>~~is~~|2.35<br>~~is~~|V<br>~~is~~|VDS= VGS, ID= 150µA<br>mV/°C<br>~~is~~<br>~~ee~~|
|VGS(th)<br>~~is~~|Gate Threshold Voltage Coefficient<br>~~is~~|–––<br>~~is~~|-6.2<br>~~is~~|–––<br>~~is~~|mV/°C<br>~~is~~||
|IDSS<br>~~ES~~|Drain-to-Source Leakage Current<br>~~ES~~|–––<br>~~ES~~|–––<br>~~ES~~|5.0<br>~~ES~~|µA<br>~~ES~~|VDS= 24V, VGS= 0V<br>~~ee~~<br>~~ES~~|
|||–––<br>~~ES~~|–––<br>~~ES~~|150<br>~~ES~~||VDS= 24V,VGS= 0V,TJ=125°C<br>~~ES~~|
|IGSS<br>~~ee~~<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|100<br>~~ee~~|nA<br>~~ee~~|VGS= 20V<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|-100<br>~~ee~~||VGS= -20V<br>~~ee~~|
|gfs<br>~~ee~~|Forward Transconductance|190|–––|–––|S|VDS= 15V,ID= 50A|
|Qg<br>~~ee~~<br>~~ee~~|Total Gate Charge<br>|–––<br>|120<br>|–––<br>|nC|VGS= 10V, VDS= 15V, ID= 50A|
|Qg<br>~~ee~~<br>~~ee~~|Total Gate Charge<br>|–––<br>|50<br>|75<br>|nC|VDS= 15V<br>VGS= 4.5V<br>ID= 50A<br>See Fig. 18|
|Qgs1<br>~~ee~~|Pre-Vth Gate-to-Source Charge<br>|–––<br>|12<br>|–––<br>|||
|Qgs2<br>~~eeSe~~|Post-Vth Gate-to-Source Charge<br>~~Se~~|–––<br>~~Se~~|6.5<br>~~Se~~|–––<br>~~Se~~|||
|Qgd<br>~~Se~~<br>~~——~~|Gate-to-Drain Charge<br>~~Se~~|–––<br>~~Se~~|16<br>~~Se~~|–––<br>~~Se~~|||
|Qgodr<br>~~——~~|Gate Charge Overdrive|–––|16|–––|||
|Qsw<br>~~——~~|Switch Charge(Qgs2+ Qgd)|–––|23|–––|||
|Qoss<br>~~——~~|Output Charge|–––|30|–––|nC|VDS= 16V,VGS= 0V|
|RG|Gate Resistance|–––|1.3|2.6|||
|td(on)<br>~~ee~~<br>~~=~~|Turn-On Delay Time<br>~~=~~|–––<br>~~=~~|26<br>~~=~~|–––<br>~~=~~|ns<br>~~=~~|VDD= 15V, VGS= 4.5V<br>ID= 50A<br>RG=1.8<br>See Fig.17<br>~~=~~|
|tr<br>~~ee~~<br>~~es=~~|Rise Time<br>~~=~~|–––<br>~~=~~|30<br>~~=~~|–––<br>~~=~~|||
|td(off)<br>~~ee~~<br>~~es=~~|Turn-Off DelayTime<br>~~=~~|–––<br>~~=~~|31<br>~~=~~|–––<br>~~=~~|||
|tf<br>~~es=~~|Fall Time<br>~~=~~|–––<br>~~=~~|13<br>~~=~~|–––<br>~~=~~|||
|Ciss<br>~~=~~|Input Capacitance<br>~~=~~|–––<br>~~=~~|7200<br>~~=~~|–––<br>~~=~~|pF<br>~~=~~|VGS= 0V<br>VDS= 15V<br>ƒ= 1.0MHz<br>~~=~~|
|Coss<br>~~=~~<br>~~es~~|Output Capacitance<br>~~=~~|–––<br>~~=~~|1360<br>~~=~~|–––<br>~~=~~|||
|Crss<br>~~=~~<br>~~es~~|Reverse Transfer Capacitance<br>~~=~~|–––<br>~~=~~|590<br>~~=~~|–––<br>~~=~~|||



## **Thermal Resistance** 

||**Parameter**|**Typ. **|**Max.**|**Units**|
|---|---|---|---|---|
|RJC (Bottom)|Junction-to-Case|0.5|0.8|°C/W|
|RJC (Top)|Junction-to-Case|–––|15||
|RJA|Junction-to-Ambient|–––|35||
|RJA (<10s)|Junction-to-Ambient|–––|33||



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## **Fig 1.** Typical Output Characteristics 

## **Fig 2.** Typical Output Characteristics 

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2.0<br>a es ID = 50A<br>eeee<br>V GS  = 10V<br>_——————F———————————<br>= o a ee ee eee 1.5 A<br>a<br>o g -—Fee ee 2 se Ss—F——Ss ee J”<br>ts F ee p24<br>2 op LA_—— 1.0 G& 4<br>5 es eeeeee<br>a , sb | | | |_| ]LT |<br>~ jH—___}}_f _ Vpg= 15V |<br>+ —_ Fy <60us PULSE WIDTH<br>0.5<br>o, LL|<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>1 2 3 4 5 6 7<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


## **Fig 3.** Typical Transfer Characteristics 

## **Fig 4.** Normalized On-Resistance vs. Temperature 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>C iss    = C gs  + C gd ,  C ds  SHORTED<br>Crss   = Cgd<br>PE C oss   = C ds  + C gd<br>10000 a ee ee<br>Ciss<br>apF] —<br>Eeee eeeeee ee ee eeeee eee<br>Coss<br>1000 ea ill<br>CTTa ee<br>——re Crss eeee e e ee<br>Ee ee ee | a ee ee ee<br>ee ee e e ee e e ee eee eee<br>100 PETIT<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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14<br>ID= 50A<br>12 V DS = 24V<br>VDS= 15V<br>FS<br>1086 i ZY aeVA 4<br>4.<br>4 A “4<br>ZF<br>2 BDrA |<br>0 fy | | hd]<br>0 40 80 120 160<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


## **Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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3.0<br>ID = 1.0A<br>ID = 1.0mA<br>2.5 LLL LE ID = 500µA<br>ID = 150µA<br>2.0<br>NOK<br>SS —<br>S<br>1.5 BN<br>1.0 NX<br>0.5<br>-75 LLL -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


## **Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Threshold Voltage Vs. Temperature 

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1<br>po er<br>D = 0.50<br>ee ee ||<br>HIE oF EHH<br>0.1 a 0.20 alloe all<br>SS es a ae a ee Oe Oe Oe ee ee<br>PEaeee 0.10 a ee a eeHEHeeee ee ee ee EHeee<br>a 0.05 Sa<br>0.01 0.02 rae<br>po mee A<br>(a 0.01 Se ee<br>a Oe Os 0 7, OnsO OO OO On OC OO OO OQ OO OO OQ Oe OO<br>a Do ee ee ee eee<br>SINGLE PULSE Notes:<br>LL 7 | ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 LALLA PE<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

**Rev. 2.6** , 2021-03-17 

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Cinfin eon<br>6<br>I = 50A<br>D<br>5<br>Mo...<br>4<br>nceaan<br>3<br>NEE<br>2 T = 125°C<br>J<br>NET<br>1 Neer<br>T = 25°C<br>J<br>0 PEPE<br>2 4 6 8 10 12 14 16 18 20<br>VGS, Gate-to-Source Voltage (V)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


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2000<br>                 I<br>D<br>TOP         15A<br>1600                21A<br>BOTTOM   50A<br>1200 KT<br>800 YT fy<br>Se<br>400<br>aS<br>0<br>25 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12.** On– Resistance vs. Gate Voltage 

**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

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1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 125°C and<br>Tstart =25°C (Single Pulse)<br>100<br>PETIA SSUES TPE HH<br>10 SSE Allowed ava HN lanche  ZA Current vs avalanche A ee<br>pulsewidth, tav, assuming   j = 25°C and<br>Tstart = 125°C.<br>Pt TT PE ee<br>1 ee ee | 0<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 14.** Typical  Avalanche Current vs. Pulse width 

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**Fig 15.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VD S L D R IVE R<br>R G D .U .T +<br>- VD D<br>IA S<br>20V<br>tp 0.01 <br>**----- End of picture text -----**<br>


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I A S<br>**----- End of picture text -----**<br>


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V (B R )D S S<br>tp ><br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17a.** Switching Time Test Circuit 

**Fig 17b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 18b.** Gate Charge Waveform 

**Fig 18a.** Gate Charge Test Circuit 

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IRFH8307TRPbF ~~a~~ 

**PQFN 5x6 Outline "B" Package Details** 

**PQFN 5x6 Outline "G" Package Details** 

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.irf.com/technical info/appnotes/an 1154.pdf 

Note: For the most current drawing please refer to  website at http://www.irf.com/packaging 

**Rev. 2.6** , 2021-03-17 

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## **PQFN 5x6 Part Marking** 

## INTERNATIONAL RECTIFIER LOGO 

**==> picture [272 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
DATE CODE<br>| XXXX I < a R7| P ART NUMBER<br>ASSEMBLY (“4 or 5 digits”)<br>SITE CODE | XYWWX M ARKING CODE<br>(Per SCOP 200-002) (Per Marking Spec)<br>XXXXX<br>PIN 1<br>IDENTIFIER<br>| LOT CODE<br>(Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to  website at http://www.irf.com/packaging 

**PQFN 5x6 Tape and Reel** 

Note: For the most current drawing please refer to  website at http://www.irf.com/packaging 

8 

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|<br>IRFH8307TRPbF<br>**Qualification Information**<br>infineon~~|~~|<br>IRFH8307TRPbF<br>**Qualification Information**<br>infineon~~|~~|<br>IRFH8307TRPbF<br>**Qualification Information**<br>infineon~~|~~|<br>IRFH8307TRPbF<br>**Qualification Information**<br>infineon~~|~~|
|---|---|---|---|
|||Industrial||
||**Qualification Level**|(per JEDEC JESD47F†guidelines)||
||**Moisture Sensitivity Level**|PQFN 5mm x 6mm<br>MSL1<br>(per JEDEC J-STD-020D†)||
||**RoHS Compliant**|Yes||



- Applicable version of JEDEC standard at the time of product release. 

## **Notes:** 

- Repetitive rating;  pulse width limited by max. junction temperature. 

- Starting TJ = 25°C, L = 0.337mH, RG = 50, IAS = 50A. 

- Pulse width  400µs; duty cycle  2%. 

-   R is measured at TJ of approximately 90°C. 

- When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details: 

   - - 

   - http://www.irf.com/technical info/appnotes/an 994.pdf 

-   Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 9. De-rating will be required based on the actual environmental conditions. 

## **Revision History** 

|**Date**|**Rev.**|**Comments**|
|---|---|---|
|03/28/2012|2.1|<br>Updated package outline on page 7.|
|08/01/2013|2.2|<br>Added "StrongIRFET™" above part number on page1|
|04/28/2015|2.3|<br>Updated package outline  for “option B” and  added package outline for “option G” on page 7.<br><br>Updated tape and reel onpage 8.|
|05/19/2015|2.4|<br>Updated package outline for “option G” on page 7.<br><br>Updated "IFX logo" onpage 1 andpage 9.|
|02/27/2020|2.5|<br>Changed datasheet with Infineon logo - all pages<br><br>Added disclaimer on last page<br><br>Removed “HEXFET ™ POWER MOSFT” -page1|
|03/17/2021|2.6|<br>Updated datasheet based on IFX template.<br><br>Updated Datasheet based on new current rating and application note :<br>App-AN_1912_PL51_2001_180356|



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IRFH8307TRPbF 

## **Trademarks of Infineon Technologies AG** 

- GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

Edition 2016-04-19 **IMPORTANT NOTICE** For further information on the product, technology, **Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or delivery terms and conditions and prices please contact your nearest Infineon Technologies ofice contact your nearest Infineon Technologies ofice **Infineon Technologies AG** www.infineon.com 81726 Munich, Germany With respect to any examples, hints or any typical values stated herein and/or any information Please note that this product is not qualified © 2016 Infineon Technologies AG. regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **WARNINGS document?** Due to technical requirements products may **Email:** erratum@infineon.com In addition, any information given in this contain dangerous substances. For information on document **is subject to customer’s compliance** the types in question please contact your nearest **with its** obligations stated in this document and Infineon Technologies ofice. any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and Except as otherwise explicitly approved by Infineon ifxl any use of the product of Infineon Technologies in Technologies in a written document signed by **customer’s applications.** authorized representatives of Infineon Technologies, **Infineon Technologies’ products** The data contained in this document is exclusively **may** not be used in any applications where a intended for technically trained staf. It is the **responsibility of customer’s technical** failure of the product or any consequences of the use thereof can reasonably be expected to result in **departments** to evaluate the suitability of the personal injury. product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies ofice contact your nearest Infineon Technologies ofice www.infineon.com 

10 

**Rev. 2.6** , 2021-03-17 



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