# Power MOSFET, N Channel, 30 V, 43 A, 1100 µohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:2577159/)

**URL**: https://novapart.co/products/IRFH8303TRPBF/power-mosfet-n-channel-30-v-43-a-1100-ohm-pqfn
**SKU**: IRFH8303TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6410
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:30V; On Resistance Rds(on):900µohm; Rds; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | StrongIRFET, HEXFET |
| Qualification | - |
| Power Dissipation | 3.7W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PQFN |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 43A |
| Drain Source On State Resistance | 1100µohm |
| Gate Source Threshold Voltage Max | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2577159/)

Strong _IR_ FET™ IRFH8303PbF 

HEXFET[® ] Power MOSFET 

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VDSS  30  V<br>RDS(on) max 1.10 m <br>Qg (typical) 58  nC<br>RG (typical) 1.0  Ω<br>ID   100  A<br>(@TC (Bottom) = 25°C)<br>==<br>Applications<br>Control MOSFET for synchronous buck converter<br>**----- End of picture text -----**<br>


PQFN 5 x 6 mm 2 

|**Features**|||||||**Benefits**|**Benefits**|**Benefits**||
|---|---|---|---|---|---|---|---|---|---|---|
|Low RDS(ON)(≤1.10 m)|||||||Lower Conduction Losses||||
|Low Thermal Resistance to PCB (||Low Thermal Resistance to PCB (<0.8°C/W)|||||Enable better Thermal Dissipation||||
|100% Rg Tested|||||||Increased Reliability||||
|Low Profile (≤0.9 mm)|0.9 mm)|0.9 mm)|||results inIncreased Power Density||Increased Power Density||||
|Industry-Standard Pinout||Standard Pinout|||||Multi-Vendor Compatibility||||
|Compatible with Existing Surface Mount Techniques|Compatible with Existing Surface Mount Techniques||Compatible with Existing Surface Mount Techniques|Compatible with Existing Surface Mount Techniques|Compatible with Existing Surface Mount Techniques||Easier Manufacturing||||
|RoHS Compliant, Halogen-Free|||||||Environmentally Friendlier||||
|MSL1, Industrial Qualification|||||||Increased Reliability||||
||||||||||||
|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Form**<br>**Quantity**<br>IRFH8303PbF<br>PQFN 5 mm x 6 mm<br>Tape and Reel<br>4000<br>IRFH8303TRPbF<br>**Orderable Part Number**<br>~~eee~~|||||||||||
|**Absolute Maximum Ratings**|||||||||||
|||**Parameter**||**Parameter**|||||**Max.**|**Units**|
|VGS||Gate-to-Source Voltage|||||||± 20|V|
|ID@ TA= 25°C||Continuous Drain Current, VGS@ 10V||@ 10V|||||43||
|ID@ TC(Bottom)= 25°C||Continuous Drain Current, VGS@ 10V||@ 10V|||||280||
|ID@ TC(Bottom)= 100°C||Continuous Drain Current, VGS@ 10V||@ 10V|||||177|A|
|ID@ TC= 25°C||Continuous Drain Current, VGS@ 10V<br>(Source Bonding Technology Limited)|||||||100||
|IDM||Pulsed Drain Current|||||||400||
|PD@TA= 25°C||Power Dissipation|||||||3.7|W|
|PD@TC(Bottom)= 25°C||Power Dissipation|||||||156||
|||Linear Derating Factor|||||||0.029|W/°C|
|TJ||Operating Junction and|||||||-55  to + 150|°C|
|TSTG||Storage Temperature Range|||||||||



Notes  through  are on page 9 

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## ~~Cinfin eon~~ 

|**Static@ TJ = 25°C(unless otherwise specified)**||||
|---|---|---|---|
|**Parameter**<br>**Min.**<br>**Typ. **<br>**Max.**<br>**Units**<br>**Conditions**<br>BVDSS<br>Drain-to-Source Breakdown Voltage<br>30<br>–––<br>–––<br>V<br>VGS= 0V,ID=  250µA<br>~~es~~<br>~~nD RU~~<br>~~NO (OO~~<br>~~a~~<br>~~ID RII~~<br>~~SN I~~||||
|BVDSS/TJBreakdown Voltage Temp. Coefficient<br>–––<br>21<br>–––<br>mV/°C Reference to 25°C,ID= 1.0mA||||
|RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>0.90<br>1.10<br>VGS= 10V, ID= 50A<br>–––<br>1.30<br>1.70<br>VGS= 4.5V, ID= 50A<br>m<br>~~EE~~||||
|VGS(th)<br>Gate Threshold Voltage<br>1.2<br>1.7<br>2.2<br>V<br>VDS= VGS, ID= 150µA<br>VGS(th)<br>Gate Threshold Voltage Coefficient<br>–––<br>-5.7<br>–––<br>mV/°C<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>1.0<br>µAVDS= 24V,VGS= 0V<br>–––<br>–––<br>150<br>VDS= 24V,VGS= 0V,TJ= 125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20 V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20 V<br>gfs<br>Forward Transconductance<br>158<br>–––<br>–––<br>S<br>VDS= 15 V,ID= 50A<br>Qg<br>Total Gate Charge<br>–––<br>119<br>179<br>VGS= 10V,VDS= 15V,ID= 50A<br>Qg<br>Total Gate Charge<br>–––<br>58<br>87<br>Qgs1<br>Pre-Vth Gate-to-Source Charge<br>–––<br>14<br>–––<br>VDS= 15V<br>Qgs2<br>Post-Vth Gate-to-Source Charge<br>–––<br>8<br>–––<br>nC<br>VGS= 4.5V<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>19<br>–––<br>ID= 50A<br>Qgodr<br>Gate Charge Overdrive<br>–––<br>17<br>–––<br>Qsw<br>Switch Charge(Qgs2+Qgd)<br>–––<br>27<br>–––<br>Qoss<br>Output Charge<br>–––<br>33<br>–––<br>nC<br>VDS= 16V,VGS= 0V<br>RG<br>Gate Resistance<br>–––<br>1.0<br>–––<br><br>td(on)<br>Turn-On DelayTime<br>–––<br>21<br>–––<br>VDD= 30V, VGS= 4.5V<br>tr<br>Rise Time<br>–––<br>91<br>–––<br>ns<br>ID= 50A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>48<br>–––<br>RG= 1.8<br>tf<br>Fall Time<br>–––<br>65<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>7736<br>–––<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>1363<br>–––<br>pF<br>VDS= 24V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>743<br>–––<br>ƒ= 1.0MHz<br>~~ee~~<br>~~i~~<br>~~—~~<br>~~————————~~<br>~~a————~~<br>~~_—~~<br>~~==—~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~I (RID(ORD ORIN (OO~~<br>~~esPD~~<br>~~QO~~<br>~~I(~~<br>~~—_————~~<br>~~ee~~<br>~~————————~~<br>~~rrr~~||||
|**Avalanche Characteristics**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>EAS<br>Single Pulse Avalanche Energy <br>–––<br>355<br>mJ<br>~~—~~||||
|**Diode Characteristics**||||
|D<br>S<br>G<br>**Parameter**<br>**Min.**<br>**Typ. **<br>**Max.**<br>**Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>100<br>A<br>MOSFET symbol<br>(BodyDiode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>400<br>integral reverse<br>(BodyDiode)<br>p-njunction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.0<br>V<br>TJ= 25°C,IS=50A,VGS=0V<br>trr<br>Reverse RecoveryTime<br>–––<br>33<br>50<br>ns<br>TJ= 25°C, IF= 50A, VDD= 15V<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>51<br>77<br>nC<br>di/dt = 200A/µs<br>~~esnD~~<br>~~(OS~~(RI<br>~~aII~~<br>~~at~~<br>~~es~~<br>~~nS ID(OD(I~~<br>~~ee~~<br>~~ee ee ee~~||||
|**Thermal Resistance**||||
|**Parameter**<br>**Typ. **<br>**Max.**||**Units**||
|RJC (Bottom)<br>Junction-to-Case<br>–––<br>0.8||||
|RJC (Top)<br>Junction-to-Case<br>–––<br>21||°C/W||
|RJA<br>Junction-to-Ambient<br>–––<br>34||||
|RJA (<10s)<br>Junction-to-Ambient<br>–––<br>21||||



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IRFH8303PbF 

**==> picture [469 x 679] intentionally omitted <==**

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>7.0V 7.0V<br>4.5V 4.5V<br>4.0V 4.0V<br>100 3.5V 3.5V<br>3.0V 3.0V<br>BOTTOM 2.5V BOTTOM 2.5V<br>100<br>10<br>2.5V<br>2.5V<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 150°C<br>Tj = 25°C<br>1 Shi 10<br>saie iit edi<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics  Fig 2.   Typical Output Characteristics<br>1000 1.8<br>ID = 50A<br>1.6 V GS  = 10V<br>100 1.4<br>TJ = 150 ° C<br>1.2<br>TJ = 25°C<br>10 1.0<br>Ne V DS  = 15V 0.8 ait<br>60µs PULSE WIDTH<br>1.0 0.6<br>fe/aee eet<br>1.0 1.5 2.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig 3.   Typical Transfer Characteristics  Fig 4.   Normalized On-Resistance vs. Temperature<br>100000 14.0<br>VGS   = 0V,       f = 1 MHZ ID= 50A<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C rss    = C gd  12.0 VDS= 24V<br>Coss   = Cds + Cgd 10.0 V DS = 15V<br>10000 Ciss<br>8.0<br>C oss<br>6.0<br>1000 Ee C rss<br>4.0<br>2.0<br>100 0.0<br>UIP) = RE@EEEEE<br>1 10 100 0 20 40 60 80 100 120 140 160<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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## ~~Cinfineon~~ 

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1000<br>100<br>TJ = 150 ° C<br>10<br>is<br>TJ = 25 ° C<br>1<br>We<br>V GS  = 0V<br>0.1 Aid<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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**----- Start of picture text -----**<br>
300<br>Limited by package<br>250<br>Pf ts<br>200 “ sl/<br>150 Pes)<br>-<br>100<br>50<br>0 PEEP)<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


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1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>100µsec<br>100 1msec<br>Limited by package<br>10<br>E<br>10msec<br>1<br>AE Tc = 25°C DC<br>Tj = 150°C<br>Single Pulse<br>0.1 Lr<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>2.6<br>2.2<br>LET<br>1.8<br>RTT<br>1.4 PP I D  = 150µA PSSESE<br>ID = 250µA<br>1.0 I D  = 1.0mA<br>ID = 1.0A<br>0.6 ttre<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Drain-to-Source Breakdown Voltage 

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**----- Start of picture text -----**<br>
1<br>D = 0.50 Tn eo<br>0.20<br>0.1 ze alll A<br>0.10<br>= 0.05 ir<br>0.02<br>0.01 0.01 7a<br>se SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 et<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>MY ML<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 11.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Cinfineon<br>5.0 1600<br>ID = 50A ID<br>1400<br>TOP         14A<br>4.0 25A<br>1200<br>BOTTOM 50A<br>3.0 |ALLEL 1000 cEVCO<br>800<br>2.0 NUHNRH 600 NNER<br>WH TJ = 125°C ER co Ceueenee<br>400<br>1.0<br>200<br>TJ = 25°C<br>0.0 LLL Pre 0 ChCSSSSSC<br>2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 12.   On-Resistance vs. Gate Voltage  Fig 13.   Maximum Avalanche Energy vs. Drain Current<br>1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 125°C and<br>Tstart = 25°C (Single Pulse)<br>|||<br>100<br>Dy inn il<br>10 Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 125°C.<br>BML 7<br>bm ie stt<br>1 | i i<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02<br>tav (sec)<br>) <br>RDS(on),  Drain-to -Source On Resistance (m EAS , Single Pulse Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

**Fig 14.** Single Avalanche Event: Pulse Current vs. Pulse Width 

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## IRFH8303PbF ~~LLL~~ 

**Fig 15.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

**==> picture [157 x 87] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>tp 0.01<br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

**Fig 17a.** Switching Time Test Circuit 

**Fig 18.** Gate Charge Test Circuit 

**==> picture [21 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V(BR)DSS<br>< tp ><br>IAS<br>Fig 16b.   Unclamped Inductive Waveforms<br>90% |7 |<br>|<br>10% | ) /[\<br>GS she si<br>ta(on) tr ta(ott) tf<br>Fig 17b.   Switching Time Waveforms<br>Id<br>Vds<br>Vgs<br>|<br>' Hl<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17b.** Switching Time Waveforms 

**Fig 19.** Gate Charge Waveform 

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IRFH8303PbF ~~LLL~~ 

## **PQFN 5x6 Outline "B" Package Details** 

## **PQFN 5x6 Outline "G" Package Details** 

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.infineon.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.infineon.com/technical info/appnotes/an 1154.pdf 

Note: For the most current drawing please refer to IR website at http://www.infineon.com/package/ 

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## **PQFN 5x6 Part Marking** 

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**----- Start of picture text -----**<br>
INTERNATIONAL<br>RECTIFIER LOGO<br>\<br>DATE CODE I t4R<br>XXXX P ART NUMBER<br>ASSEMBLY (“4 or 5 digits”)<br>SITE CODE XYWWX M ARKING CODE<br>(Per SCOP 200-002) (Per Marking Spec)<br>XXXXX<br>PIN 1 -®@ \<br>IDENTIFIER<br>LOT CODE<br>(Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>**----- End of picture text -----**<br>


**PQFN 5x6 Tape and Reel** 

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**----- Start of picture text -----**<br>
REEL DIMENSIONS TAPE DIMENSIONS<br>CODE DESCRIPTION<br>Ao Dimension design to accommodate the component width<br>Bo Dimension design to accommodate the component lenght<br>Ko Dimension design to accommodate the component thickness<br>W Overall width of the carrier tape<br>P1 Pitch between successive cavity centers<br>QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE<br>=><br>Note:  All dimension are nominal<br>Package Reel QTY Reel Ao Bo Ko P1 W Pin 1<br>Type Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant<br>(Inch) W1<br>(mm)<br>5 X 6 PQFN 13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.infineon.com/package/ 

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**Qualification Information[† ]** 

Industrial **Qualification Level** (per JEDEC JESD47F[††] guidelines) MSL1 **Moisture Sensitivity Level** PQFN 5mm x 6mm (per JEDEC J-STD-020D[††)] **RoHS Compliant** Yes ~~a~~ - † Qualification standards can be found at International Rectifier’s web site: http://www.infineon.com/product info/reliability †† Applicable version of JEDEC standard at the time of product release. 

## **Notes:** 

- Starting TJ = 25°C, L = 0.28mH, RG = 50, IAS = 50A. 

- Pulse width  400µs; duty cycle  2%. 

-  R is measured at TJ of approximately 90°C. 

- When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details: - - 

- http://www.infineon.com/technical info/appnotes/an 994.pdf 

- Calculated continuous current based on maximum allowable junction temperature. 

- Current is limited to 100A by source bonding technology. 

## **Revision History** 

|**Revision History**||
|---|---|
|**Date**|**Comments**|
|10/22/2013|<br>Added the Rdson at Vgs = 4.5V values, on page 2.|
|03/17/2015|<br>Updated package outline and tape and reel on pages 7 and 8.|
|01/24/2017|<br>Changed datasheet with Infineon logo - all pages<br><br>Added package outline for “option G” on page 7.<br><br>Added disclaimer on last page|



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## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **IMPORTANT NOTICE** 

**Edition 2016-04-19** The information given in this document shall in no **Published by** event be regarded as a guarantee of conditions or **Infineon Technologies AG characteristics  (“Beschaffenheitsgarantie”) . 81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information **© 2016 Infineon Technologies AG.** regarding the application of the product, Infineon **All Rights Reserved.** Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **document? Email:** erratum@infineon.com In addition, any information given in this document **is subject to customer’s compliance with its** obligations stated in this document and any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and **ifx1** any use of the product of Infineon Technologies in **customer’s applications.** The data contained in this document is exclusively intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, **Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

10 2017-01-24 ~~ee~~ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFH8303TRPBF/power-mosfet-n-channel-30-v-43-a-1100-ohm-pqfn)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfh8303trpbf/mosfet-n-ch-30v-43a-pqfn-8/dp/2577159)
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