# Power MOSFET, N Channel, 25 V, 47 A, 1050 µohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:2577191/)

**URL**: https://novapart.co/products/IRFH8202TRPBF/power-mosfet-n-channel-25-v-47-a-1050-ohm-pqfn
**SKU**: IRFH8202TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4500
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:25V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | StrongIRFET, HEXFET |
| Qualification | - |
| Power Dissipation | 3.6W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PQFN |
| Drain Source Voltage Vds | 25V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 47A |
| Drain Source On State Resistance | 1050µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2577191/)

Strong _IR_ FET™ IRFH8202TRPbF ~~pe~~ 

**VDSS 25 V RDS(on) max 1.05 m**  (@ VGS = 10V) **Qg (typical) 52 nC Rg (typical) 1.3 Ω ID 314 A (@TC (Bottom) = 25°C)** ~~==:~~ 

**==> picture [69 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
PQFN 5X6 mm<br>**----- End of picture text -----**<br>


## **Applications** 

 OR-ing MOSFET for 12V (typical) Bus in-Rush Current 

-  Battery Operated DC Motor Inverter MOSFET 

## **Features** 

## **Benefits** 

Low RDSon (<1.05 mΩ) Lower Conduction Losses Low Thermal Resistance to PCB (< 0.8°C/W) Enable better Thermal Dissipation Low Profile (< 0.9mm) Increased Power Density Industry-Standard Pinout results in Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques  Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage|25|V|
|VGS|Gate-to-Source Voltage|± 20|V|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|47|A|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V|38||
|ID@ TC(Bottom)= 25°C|Continuous Drain Current, VGS@ 10V|314||
|ID@ TC(Bottom)= 100°C|Continuous Drain Current, VGS@ 10V|199||
|IDM|Pulsed Drain Current|1256||
|PD@TA= 25°C|Power Dissipation|3.6|W|
|PD@TC(Bottom)= 25°C|Power Dissipation|156||
||Linear Derating Factor|0.029|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|



Notes  through  are on page 9 

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|<br>IRFH8202TRPbF<br>~~Cinfineon~~<br>|<br>~~P|~~||
|---|---|
|**Static@ TJ = 25°C(unless otherwise specified)**||
|**Parameter**<br>**Min.**<br>**Typ. **<br>**Max.**<br>**Units**<br>**Conditions**<br>BVDSS<br>Drain-to-Source Breakdown Voltage<br>25<br>–––<br>–––<br>V<br>VGS= 0V,ID= 250µA<br>BVDSS/TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.02<br>–––<br>V/°C Reference to 25°C, ID= 1.0mA<br>~~a~~<br>~~a~~<br>~~(RR~~<br>~~(OR~~<br>~~US(S(O~~||
|RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>0.90<br>1.05<br>m<br>VGS= 10V, ID= 50A<br>–––<br>1.40<br>1.85<br>VGS= 4.5V,ID= 50A<br>VGS(th)<br>Gate Threshold Voltage<br>1.35<br>1.80<br>2.35<br>V<br>VDS= VGS, ID= 150µA<br>VGS(th)<br>Gate Threshold Voltage Coefficient<br>–––<br>-6.3<br>–––<br>mV/°C<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>5.0<br>µAVDS= 20V,VGS= 0V<br>–––<br>–––<br>150<br>VDS= 20V,VGS= 0V,TJ= 125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>gfs<br>Forward Transconductance<br>181<br>–––<br>–––<br>S<br>VDS= 13V,ID= 50A<br>Qg<br>Total Gate Charge<br>–––<br>110<br>–––<br>nC<br>VGS= 10V,VDS= 13V,ID= 50A<br>~~es~~<br>~~ee ee ee~~<br>~~rr~~<br>~~————~~<br>~~a~~||
|Qg<br>Total Gate Charge<br>–––<br>52<br>78<br>nC<br>Qgs1<br>Pre-Vth Gate-to-Source Charge<br>–––<br>13<br>–––<br>VDS= 13V<br>Qgs2<br>Post-Vth Gate-to-Source Charge<br>–––<br>7.8<br>–––<br>VGS= 4.5V<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>17<br>–––<br>ID= 50A<br>Qgodr<br>Gate Charge Overdrive<br>–––<br>15<br>–––<br>Qsw<br>Switch Charge(Qgs2+ Qgd)<br>–––<br>25<br>–––<br>Qoss<br>Output Charge<br>–––<br>36<br>–––<br>nC<br>VDS= 16V,VGS= 0V<br>~~a~~<br>~~—_~~<br>~~———————————~~||
|RG<br>Gate Resistance<br>–––<br>1.3<br>2.6<br>||
|td(on)<br>Turn-On DelayTime<br>–––<br>28<br>–––<br>ns<br>VDD= 13V, VGS= 4.5V<br>tr<br>Rise Time<br>–––<br>46<br>–––<br>ID= 50A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>30<br>–––<br>RG=1.8<br>tf<br>Fall Time<br>–––<br>19<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>7174<br>–––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>1758<br>–––<br>VDS= 13V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>828<br>–––<br>ƒ= 1.0MHz<br>~~es~~<br>~~——————~~<br>~~eee~~<br>~~————————————~~<br>~~a~~<br>~~ne~~||
|**Avalanche Characteristics**||
|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**||
|EAS<br>SinglePulseAvalancheEnergy <br>–––<br>468<br>mJ||
|IAR<br>Avalanche Current<br>–––<br>50<br>A||
|**Diode Characteristics**||
|D<br>S<br>G<br>**Parameter **<br>**Min. Typ. Max.Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>156<br>A<br>MOSFET symbol<br>(BodyDiode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––<br>––– 1256<br>integral reverse<br>(BodyDiode) <br>p-njunctiondiode.<br>VSD<br>DiodeForwardVoltage<br>–––<br>–––<br>1.0<br>V<br>TJ= 25°C,IS=50A,VGS=0V<br>~~a~~<br>~~I GD(UD(OD (UN(OR~~<br>~~re~~<br>~~Ss~~<br>~~af~~||
|trr<br>ReverseRecoveryTime<br>–––<br>37<br>56<br>nsTJ= 25°C, IF= 50A, VDD= 13V<br>Qrr<br>ReverseRecovery Charge<br>–––<br>68<br>102<br>nC di/dt=200A/µs<br>~~pe~~<br>~~i~~||
|**Thermal Resistance**||
|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**||
|RJC (Bottom) Junction-to-Case<br>0.5<br>0.8||
|°C/W<br>RJC (Top)<br>Junction-to-Case<br>–––<br>15<br>RJA<br>Junction-to-Ambient<br>–––<br>35||
|RJA (<10s)<br>Junction-to-Ambient<br>–––<br>21||



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IRFH8202TRPbF ~~Co~~ 

**Fig 1.** Typical Output Characteristics 

**Fig 3.** Typical Transfer Characteristics 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 2.** Typical Output Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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IRFH8202TRPbF ~~p~~ 

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**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

**Fig 9.** Maximum Drain Current vs. Case (Bottom) Temperature 

**Fig 10.** Threshold Voltage vs. Temperature 

**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 

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IRFH8202TRPbF ~~p~~ 

**Fig 12.** On-Resistance vs. Gate Voltage 

**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

**Fig 14.** Typical Avalanch Current vs. Pulsewidth 

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IRFH8202TRPbF ~~pe~~ 

**Fig 15.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

**Fig 16a.** Unclamped Inductive Test Circuit 

**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17a.** Switching Time Test Circuit 

**Fig 17b.** Switching Time Waveforms 

**Fig 17a.** Gate Charge Test Circuit 

**Fig 17b.** Gate Charge Waveform 

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IRFH8202TRPbF ~~pe~~ 

## ~~Cnfineon~~ 

## **PQFN 5x6 Outline "B" Package Details** 

**PQFN 5x6 Outline "G" Package Details** 

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.irf.com/technical info/appnotes/an 1154.pdf 

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IRFH8202TRPbF ~~a~~ 

## **PQFN 5x6 Part Marking** 

**==> picture [273 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
INTERNATIONAL<br>RECTIFIER LOGO<br>DATE CODE<br>| XXXX I e a R;| P ART NUMBER<br>ASSEMBLY (“4 or 5 digits”)<br>SITE CODE | XYWWX M ARKING CODE<br>(Per SCOP 200-002) (Per Marking Spec)<br>XXXXX<br>PIN 1<br>IDENTIFIER<br>| LOT CODE<br>(Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/packaging 

**PQFN 5x6 Tape and Reel** 

Note: For the most current drawing please refer to IR website at http://www.irf.com/packaging 

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IRFH8202TRPbF ~~Cinfineon P|~~ **Qualification Information** Industrial **Qualification level** (per JEDEC JESD47F[ †] guidelines ) MSL1 **Moisture Sensitivity Level** PQFN 5mm x 6mm (per JEDEC J-STD-020D[†)] Yes **RoHS Compliant** ~~—~~ † Applicable version of JEDEC standard at the time of product release. 

## **Notes:** 

- Repetitive rating; pulse width limited by max. junction temperature. 

- Starting TJ = 25°C, L = 0.37mH, RG = 25, IAS = 50A. 

- Pulse width  400µs; duty cycle  2%. 

- R is measured at TJ of approximately 90°C. 

- When mounted on 1 inch square  2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf 

- Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 9. De-rating will be required based on the actual environmental conditions. 

## **Revision History** 

|**Date**|**Rev.**|**Comments**|
|---|---|---|
|8/1/2013|2.1|<br>Added "StrongIRFET™" above part number on page 1|
|4/28/2015|2.2|<br>Updated package outline for “option B” and added package outline for “option G” on page 7<br><br>Updated tape and reel on page 8.|
|5/19/2015|2.3|<br>Updated package outline for “option G” on page 7.<br><br>Updated "IFX logo" on page 1 and page 9.|
|01/29/2021|2.4|<br>Updated datasheet based on IFX template.<br><br>Updated Datasheet based on new current rating and application note :<br>App-AN_1912_PL51_2001_180356<br><br>Removed “HEXFET®Power MOSFET” -page1<br><br>Updated Package picture on page1|



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IRFH8202TRPbF 

## **Trademarks of Infineon Technologies AG** 

- GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

Edition 2016-04-16 **IMPORTANT NOTICE** The information given in this document shall in no **Published by** event be regarded as a guarantee of conditions or **Infineon Technologies AG** 81726 Munich, Germany With respect to any examples, hints or any typical values stated herein and/or any information © 2016 Infineon Technologies AG. regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **document? Email:** erratum@infineon.com In addition, any information given in this document **is subject to customer’s compliance with its** obligations stated in this document and any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and ifxl any use of the product of Infineon Technologies in **customer’s applications.** The data contained in this document is exclusively intended for technically trained staf. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies ofice www.infineon.com 

Please note that this product is not qualified 

**WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies ofice. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, **Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

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**Rev. 2.4** , 2021-01-29 



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