# Power MOSFET, StrongIRFET™, N Channel, 25 V, 100 A, 950 µohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:2781126RL/)

**URL**: https://novapart.co/products/IRFH8201TRPBF/power-mosfet-strongirfettm-n-channel-25-v-100-a
**SKU**: IRFH8201TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5180
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):800µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 156W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PQFN |
| Drain Source Voltage Vds | 25V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 950µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781126RL/)

|Strong_IR_FET™<br>IRFH8201PbF<br>~~Gi~~|Strong_IR_FET™<br>IRFH8201PbF<br>~~Gi~~|Strong_IR_FET™<br>IRFH8201PbF<br>~~Gi~~|Strong_IR_FET™<br>IRFH8201PbF<br>~~Gi~~|Strong_IR_FET™<br>IRFH8201PbF<br>~~Gi~~|Strong_IR_FET™<br>IRFH8201PbF<br>~~Gi~~|
|---|---|---|---|---|---|
||||||HEXFET®Power MOSFET|
||**VDSS**|**25**|**V**|||
||**RDS(on)max**<br>(@ VGS=10V)<br>(@VGS= 4.5V)|**0.95**<br>**1.60**|**m**|||
||**Qg (typical)**|**56**|**nC**|||
||**ID**<br>**(@TC (Bottom) = 25°C)**|**100**|**A**||PQFN 5X6 mm|



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PQFN 5X6 mm<br>**----- End of picture text -----**<br>


## **Applications** 

OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverters 

**Features Benefits** Low RDSon (<0.95m) Lower Conduction Losses Low Thermal Resistance to PCB (<0.8°C/W) Enable better thermal dissipation Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout  Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial Qualification Increased Reliabilitycreased Reliabilityreased Reliabilityeased Reliability Reliabilityeliabilityliabilityabilityilityty 

Increased Reliabilitycreased Reliabilityreased Reliabilityeased Reliability Reliabilityeliabilityliabilityabilityilityty 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VGS|Gate-to-Source Voltage|± 20|V|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|49|A|
|ID@ TC (Bottom)= 25°C|Continuous Drain Current, VGS@ 10V|324||
|ID@ TC (Bottom)= 100°C|Continuous Drain Current, VGS@ 10V|205||
|ID@ TC(Bottom)= 25°C|Continuous Drain Current, VGS@ 10V<br>(Source Bonding Technology Limited)|100||
|IDM|Pulsed Drain Current|700||
|PD@TA= 25°C|Power Dissipation|3.6|W|
|PD@TC (Bottom)= 25°C|Power Dissipation|156||
||Linear Derating Factor|0.029|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|



Notes  through   are on page 9 

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**Static @ TJ = 25°C (unless otherwise specified)** 

|**Static @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**|**Static @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**||||||
|---|---|---|---|---|---|---|
|~~GG~~|**Parameter**<br>~~GG~~|**Min.**<br>~~GG~~|**Typ.**<br>~~GG~~|**Max.**<br>~~GG~~|**Units**<br>~~GG~~|**Conditions**<br>~~GG~~|
|BVDSS<br>~~GG~~<br>~~ee~~|Drain-to-SourceBreakdown Voltage<br>~~GG~~<br>~~ee~~|25<br>~~GG~~<br>~~ee~~|–––<br>~~GG~~<br>~~ee~~|–––<br>~~GG~~<br>~~ee~~|V<br>~~GG~~<br>~~ee~~|VGS=0V,ID= 250µA<br>~~GG~~<br>~~ee~~|
|BVDSS/TJ<br>~~ee~~|Breakdown Voltage Temp. Coefficient<br>~~ee~~|–––<br>~~ee~~|20<br>~~ee~~|–––<br>~~ee~~|mV/°C Reference to 25°C<br>~~ee~~|mV/°C Reference to 25°C,ID= 1mA<br>~~ee~~|
|RDS(on)<br>~~EE~~|Static Drain-to-Source On-Resistance<br>~~EE~~|–––<br>~~EE~~|0.80<br>~~EE~~|0.95<br>~~EE~~|m<br>~~EE~~|VGS= 10V,ID= 50A<br>~~EE~~|
|||–––<br>~~EE~~|1.20<br>~~EE~~|1.60<br>~~EE~~||VGS= 4.5V,ID=50A<br>~~EE~~|
|VGS(th)<br>~~ee~~|GateThresholdVoltage<br>~~ee~~|1.35<br>~~ee~~|1.80<br>~~ee~~|2.35<br>~~ee~~|V<br>~~ee~~|VDS= VGS, ID= 150µA<br>~~ee~~|
|GS(th)<br>VGS(th)<br>~~ee~~|Gate Threshold Voltage Coefficient<br>~~ee~~|–––<br>~~ee~~|-6.1<br>~~ee~~|–––<br>~~ee~~|mV/°C<br>~~ee~~||
|GS(th)<br>IDSS<br>~~EE~~|Drain-to-Source Leakage Current<br>~~EE~~|–––<br>~~EE~~|–––<br>~~EE~~|1.0<br>~~EE~~|µA<br>~~EE~~|VDS= 20V,VGS= 0V<br>~~EE~~|
|||–––<br>~~EE~~|–––<br>~~EE~~|150<br>~~EE~~||VDS =20V, VGS =0V, TJ=125°C<br>~~EE~~|
|IGSS<br>~~Ee~~|Gate-to-SourceForwardLeakage<br>~~Ee~~|–––<br>~~Ee~~|–––<br>~~Ee~~|100<br>~~Ee~~|nA<br>~~Ee~~|VGS= 20V<br>~~Ee~~|
||Gate-to-Source Reverse Leakage<br>~~Ee~~|–––<br>~~Ee~~|–––<br>~~Ee~~|-100<br>~~Ee~~||VGS = -20V<br>~~Ee~~|
|gfs<br>~~Ee~~|ForwardTransconductance<br>~~Ee~~|181<br>~~Ee~~|–––<br>~~Ee~~|–––<br>~~Ee~~|S<br>~~Ee~~|VDS= 10V,ID=50A<br>~~Ee~~|
|Qg|Total Gate Charge|–––|111|–––|nC|VGS= 10V, VDS= 13V, ID= 50A|
|Qg|Total Gate Charge|–––|56|84|nC|VDS= 13V<br>VGS= 4.5V<br>ID= 50A|
|Qgs1|Pre-Vth Gate-to-Source Charge|–––|16|–––|||
|gs1<br>Qgs2<br>~~ee~~|Post-VthGate-to-Source Charge|–––|7.0|–––|||
|gs2<br>Qgd<br>~~ee~~|Gate-to-Drain Charge|–––|18|–––|||
|gd<br>Qgodr<br>~~ee~~|Gate Charge Overdrive|–––|15|–––|||
|godr<br>Qsw|Switch Charge(Qgs2+Qgd)|–––|25|–––|||
|Qoss|Output Charge|–––|39|–––|nC|VDS =16V, VGS =0V|
|RG|Gate Resistance|–––|1.1|–––|||
|td(on)|Turn-On DelayTime|–––|27|–––|ns|VDD= 13V, VGS= 4.5V<br>ID= 50A<br>RG=4.7|
|tr|Rise Time|–––|54|–––|||
|td(off)|Turn-Off DelayTime|–––|31|–––|||
|tf|Fall Time|–––|22|–––|||
|Ciss|Input Capacitance|–––|7330|–––|pF|VGS= 0V<br>VDS= 13V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance|–––|1730|–––|||
|Crss|Reverse Transfer Capacitance|–––|850|–––|||



|~~a ~~<br>~~es~~|**Parameter**<br> ~~GO~~|**Min.**<br>~~GO~~|**Typ.**<br>~~GO~~|**Max.**<br>~~GO~~|**Units**<br>~~GO~~|**Conditions**<br>~~GO~~|
|---|---|---|---|---|---|---|
|IS<br>~~es~~|Continuous Source Current<br>(BodyDiode)|–––|–––|100|A|D<br>S<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.|
|ISM<br>~~es~~<br>~~a~~|(odyode)<br>Pulsed Source Current<br>(BodyDiode)|–––|–––|700|||
|VSD<br>~~es~~|DiodeForwardVoltage|–––|–––|1.0|V|TJ= 25°C,IS=50A,VGS=0V|
|trr|ReverseRecoveryTime|–––|25|38|ns|TJ= 25°C, IF= 50A, VDD= 13V<br>di/dt = 400A/µs|
|Qrr|Reverse Recovery Charge|–––|57|86|nC||



## **Thermal Resistance** 

||**Parameter**|**Typ. **|**Max.**|**Units**|
|---|---|---|---|---|
|RJC (Bottom)|Junction-to-Case|0.5|0.8|°C/W|
|RJC (Top)|Junction-to-Case|–––|21||
|RJA|Junction-to-Ambient|–––|35||
|RJA (<10s)|Junction-to-Ambient|–––|20||



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1000 1000<br>VGS VGS<br>TOP           10V TOP           10V<br>7.0V 7.0V<br>5.0V 5.0V<br>4.5V 4.5V<br>3.5V 3.5V<br>100 3.0V 3.0V<br>2.75V 2.75V<br>BOTTOM 2.5V BOTTOM 2.5V<br>100<br>10<br>2.5V<br>2.5V<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>1 So] Tj = 25°C 10 AtY-—* Tj = 150°C<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>Fig 1.   Typical Output Characteristics<br>1000 1.8<br>ID = 50A<br>1.6 V GS  = 10V<br>100 1.4<br>| yt ) ete<br>1.2<br>TJ = 150°C TJ = 25°C<br>10 1.0<br>0.8<br>V DS  = 15V<br>60µs PULSE WIDTH<br>1.0 cia 0.6 PEEP<br>1.0 2.0 3.0 4.0 5.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig 3.   Typical Transfer Characteristics  Fig 4.   Normalized On-Resistance vs. Temperature<br>100000 14.0<br>VGS   = 0V,       f = 1 MHZ ID= 50A<br>Ciss    = Cgs  + Cgd,  Cds  SHORTED<br>C rss    = C gd  12.0<br>Coss   = Cds  + Cgd<br>10.0 V DS = 20V<br>10000<br>Ciss VDS= 13V<br>8.0<br>C oss 6.0<br>1000 Crss<br>4.0<br>sit all Ma aeb ade<br>Tig a7 oe0<br>2.0<br>100 0.0<br>BA lll ee deen<br>1 10 100 0 20 40 60 80 100 120 140<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


## **Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage **Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 3 2017-01-24 ~~=.~~ 

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## ~~Cinfin eon~~ 

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1000<br>100 ae<br>TJ = 150°CJ = 150°C= 150°C<br>10 TJ = 25°CJ = 25°C= 25°C<br>1<br>0.1 Poseee [ V GS  = 0V 0V<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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OPERATION IN THIS AREA<br>LIMITED BY R DS (on)<br>1000<br>100 ae =a<br>100µsec<br>TJ = 150°CJ = 150°C= 150°C 100 1msec<br>10 TJ = 25°CJ = 25°C= 25°C Limited by Package<br>10<br>10msec<br>1<br>1 Tc = 25°C DC<br>Tj = 150°C<br>0.1 Poseee [ V GS  = 0V 0V 0.1 aS} Single Pulse<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>Fig 7.   Typical Source-Drain Diode Forward Voltage<br>350 2.8<br>300<br>ee Limited by package 2.4 TTTTIII1<br>250<br>2.0<br>200<br>ro a7 Jf<br>150 Ane 1.6 |SSCPeK<br>100 ID = 150µA<br>aw 1.2 ID = 250µA go. NG<br>50 ID = 1.0mA<br>ID = 1A<br>0 TTTCIAry 0.8 SSFLELLES<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Case Temperature  Fig 10.   Threshold Voltage Vs. Temperature<br>1 D = 0.50 TT TL _L “CeLOooo<br>0.20<br>0.1 0.10<br>;=| 0.05 messesAr eat OL<br>0.02<br>0.01 0.01<br>= SINGLE PULSE [sail] CemEl<br>0.001 ( TH ERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 11.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>4  2017-01-24<br>=|.<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>ID,  Drain Current (A)<br>VGS(th), Gate threshold Voltage (V)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


IRFH8201PbF ~~LLL~~ 

## ~~Cinfineon~~ 

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4.0 2000<br>ID = 50A ID<br>TOP         15A<br>1600 24A<br>3.0 BOTTOM 50A<br>A 1200 Kp<br>2.0 ALLELE LL ALL<br>TJ = 125°C 800<br>KC NTA<br>1.0<br>400<br>AST) | SST<br>TJ = 25°C<br>0.0 ttt = 0 PSBS<br>2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** On– Resistance vs. Gate Voltage 

**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

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**----- Start of picture text -----**<br>
1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 125°C and<br>BAS | Tstart =25°C (Single Pulse)<br>100 aEl eee |<br>10 Pea ieee AT<br>Allowed avalanche Current vs avalanche<br>HB pulsewidth, tav, assuming  al  j = 25°C and  Sh a<br>Tstart = 125°C.<br>PIP<br>1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 14.** Single Avalanche Event: Pulse Current vs. Pulse Width 

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## IRFH8201PbF ~~a~~ 

**Fig 15.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>20V JL IAS<br>ae tp Y 0.01<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp > |<br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17a.** Switching Time Test Circuit 

**Fig 17b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>A _\ |<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 18a.** Gate Charge Test Circuit 

**Fig 18b.** Gate Charge Waveform 

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IRFH8201PbF 

## **PQFN 5x6 Outline "B" Package Details** 

## **PQFN 5x6 Outline "G" Package Details** 

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.infineon.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.infineon.com/technical info/appnotes/an 1154.pdf 

Note: For the most current drawing please refer to IR website at http://www.infineon.com/package/ 

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## **PQFN 5x6 Part Marking** 

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INTERNATIONAL<br>RECTIFIER LOGO<br>\<br>DATE CODE I tk4R<br>XXXX P ART NUMBER<br>ASSEMBLY (“4 or 5 digits”)<br>SITE CODE XYWWX M ARKING CODE<br>(Per SCOP 200-002) (Per Marking Spec)<br>XXXXX<br>PIN 1 -@ \<br>IDENTIFIER<br>LOT CODE<br>(Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>**----- End of picture text -----**<br>


## **PQFN 5x6 Tape and Reel** 

|||**REEL DIMENSIONS**|**REEL DIMENSIONS**|**REEL DIMENSIONS**|**REEL DIMENSIONS**|||||||||||||||||||**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|||||||||||||
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||||||||||||||||CODE|||||||||||||||||||DESCRIPTION|||||||||||||||
||||||||||||||||Ao|||||Dimension design to accommodate the component width|||||||||||||||||||||||||||||
||||||||||||||||Bo|||||Dimension design to accommodate the component lenght|||||||||||||||||||||||||||||
||||||||||||||||Ko|||||Dimension design to accommodate the component thickness|||||||||||||||||||||||||||||
||||||||||||||||W|||||Overall width of the carrier ta||||||Overall width of the carrier ta||||Overall width of the carrier ta|Overall width of the carrier ta|||Overall width of the carrier tape|||||||||||||||
||||||||||||||||P1|||||Pitch between successive cavitycenters|||||||||||||||||||centers||||||||||
|||||||**QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE**||||||||||||**QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE**||||||||||||||||||**QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE**|||||||||||||
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|Note:  All dimension are nominal|||||||||||||||||||||||||||||||||||||||||||||||||
||Package|||Reel||QTY|Reel|||||Ao|||||Bo|||||||||Ko||||||||P1||||||W||||Pin 1|||||
||||Type|Diameter|||Width||||(mm)||||||(mm)|||||||||(mm)||||||||(mm)||||(mm)||||||Quadrant|||||
|||||(Inch)|||W1||||||||||||||||||||||||||||||||||||||||||
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|5 X 6 PQFN||5 X 6 PQFN|||13|4000|12.4||||6.300||||||5.300|||||||||1.20||||||||8.00||||||12|||||Q1||||



Note: For the most current drawing please refer to IR website at http://www.infineon.com/package/ 

8 

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## **Qualifiction Information[† ]** 

|**Qualifiction Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial†<br>(per JEDEC JESD47F††guidelines)||
|**Moisture Sensitivity Level**|PQFN 5mm x 6mm|MSL1<br>(per JEDEC J-STD-020D††)|
|**RoHS Compliant**|Yes||



† Qualification standards can be found at International Rectifier’s web site: http://www.infineon.com/product-info/reliability/ 

- †† Applicable version of JEDEC standard at the time of product release. 

## **Notes:** 

- Starting TJ = 25°C, L = 0.35mH, RG = 50, IAS = 50A. 

- Pulse width  400µs; duty cycle  2%. 

-  R is measured at TJ of approximately 90°C. 

- When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details: - - 

- http://www.infineon.com/technical info/appnotes/an 994.pdf 

- Calculated continuous current based on maximum allowable junction temperature. 

-  Current is limited to 100A by source bonding technology. 

- Calculated based on maximum allowable junction temperature; Pulse width  200µs, Vgs= 10V. 

## **Revision History** 

|**Revision History**||
|---|---|
|**Date**|**Comments**|
|10/23/2013|<br>Added Rdson@4.5V-page1, 2|
|07/30/2014|<br>Updated IDM from “400A” to “700A” on page1, 2.<br><br>Updated Fig1, Fig2, Fig3, Fig7 & Fig8 on page 3, 4.|
|03/11/2015|<br>Updatedpackage outline and tape and reel onpages 7 and 8.|
|01/24/2017|<br>Changed datasheet with Infineon logo - all pages<br><br>Added package outline for “option G” on page 7.<br><br>Added disclaimer on last page|



9 

2017-01-24 

~~Cinfineon~~ 

IRFH8201PbF ~~LLL~~ 

## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **IMPORTANT NOTICE** 

**Edition 2016-04-19** The information given in this document shall in no **Published by** event be regarded as a guarantee of conditions or **Infineon Technologies AG characteristics  (“Beschaffenheitsgarantie”) . 81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information **© 2016 Infineon Technologies AG.** regarding the application of the product, Infineon **All Rights Reserved.** Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **document? Email:** erratum@infineon.com In addition, any information given in this document **is subject to customer’s compliance with its** obligations stated in this document and any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and **ifx1** any use of the product of Infineon Technologies in **customer’s applications.** 

The data contained in this document is exclusively intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, **Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

10 

2017-01-24 



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- [Supplier page](https://es.farnell.com/infineon/irfh8201trpbf/mosfet-n-ch-25v-100a-pqfn/dp/2781126RL)
---

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