# Power MOSFET, StrongIRFET™, N Channel, 75 V, 68 A, 6600 µohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:2781125/)

**URL**: https://novapart.co/products/IRFH7787TRPBF/power-mosfet-strongirfettm-n-channel-75-v-68-a
**SKU**: IRFH7787TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4680
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:68A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0066ohm; Rds(on) Test Voltage Vgs:; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 83W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PQFN |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 68A |
| Drain Source On State Resistance | 6600µohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781125/)

Strong _IR_ FET™ IRFH7787PbF ~~po~~ 

## International ~~TER Rectifier~~ 

## **Application** 

## HEXFET[® ] Power MOSFET 

-  Brushed motor drive applications 

-  BLDC motor drive applications 

-  Battery powered circuits 

-  Half-bridge and full-bridge topologies 

-  Synchronous rectifier applications 

-  Resonant mode power supplies 

-  OR-ing and redundant power switches 

|HEXFET|HEXFET[® ]Power MOSFET|
|---|---|
|**VDSS**|**75V**|
|**RDS(on)typ.**<br>**max**|**typ.**<br>**6.6m**<br>**max**<br>**8.0m**|
|**ID **|**68A**|



-  DC/DC and AC/DC converters 

-  DC/AC inverters 

## **Benefits** 

-  Improved  gate, avalanche and dynamic dV/dt ruggedness 

-  Fully characterized capacitance and avalanche SOA 

-  Enhanced body diode dV/dt and dI/dt capability 

-  Lead-free, RoHS compliant 

PQFN 5 x 6 mm 

|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRFH7787PbF|PQFN 5mm x 6mm|Tape and Reel|4000|IRFH7787TRPbF|



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18<br>ID = 41A<br>16 Lae<br>14<br>TJ = 125°C<br>MEET ELL<br>12<br>TNA TT<br>10<br>Atty yy<br>8 T J  = 25°C<br>4d tt<br>6 PSE LL<br>4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)<br> <br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


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70<br>60 NT<br>50<br>40 NEL<br>30 RN<br>20 TO<br>10<br>CET<br>0 FTP TA<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

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IRFH7787PbF 

## **Absolute Maximum Rating** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID @TC= 25°C|Continuous Drain Current,VGS @10V|68|A|
|ID @TC= 100°C|Continuous Drain Current,VGS @10V|43||
|IDM|Pulsed Drain Current|270||
|PD @TC= 25°C|Maximum Power Dissipation|83|W|
||Linear DeratingFactor|0.67|W/°C|
|VGS|Gate-to-Source Voltage|± 20|V|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|



**Avalanche Characteristics** EAS (Thermally limited) Single Pulse Avalanche Energy  100 mJ EAS (Thermally limited) Single Pulse Avalanche Energy  146 IAR Avalanche Current  See Fig 15, 16, 23a, 23b A ~~——~~ EAR Repetitive Avalanche Energy  mJ **Thermal Resistance Symbol Parameter Typ. Max. Units** RJC (Bottom) Junction-to-Case  ––– 1.5 RJC (Top) Junction-to-Case  ––– 21 °C/W RJA Junction-to-Ambient ––– 34 ~~————~~ RJA (<10s) Junction-to-Ambient ––– 22 **Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions** V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ  Breakdown Voltage Temp. Coefficient ––– 60 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 6.6 8.0 m VGS = 10V, ID = 41A ––– 7.5 ––– VGS = 6.0V, ID = 21A VGS(th) Gate Threshold Voltage 2.1 ––– 3.7 V VDS = VGS, ID = 100µA IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS =75 V, VGS = 0V ––– ––– 150 VDS =75V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 2.3 –––  ~~so~~ **Notes:** Repetitive rating; pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 120µH, RG = 50, IAS = 41A, VGS =10V. 

- ISD  41A, di/dt  1140A/µs, VDD  V(BR)DSS, TJ 175°C. 

- Pulse width  400µs; duty cycle  2%. 

-  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

-  R is measured at TJ approximately 90°C. 

-  Limited by TJmax, starting TJ =25°C, L= 1mH, RG = 50, IAS = 17A, VGS =10V. 

2 

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IRFH7787PbF ~~LT~~ 

## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~es~~|**Parameter**<br>~~es~~|**Min.**<br>~~es~~|**Typ. **<br>~~es~~|**Max. Units**<br>~~es~~<br>~~OO~~|**Max. Units**<br>~~es~~<br>~~OO~~|**Max. Units**<br>**Conditions**<br>~~es~~|
|---|---|---|---|---|---|---|
|gfs<br>~~OD~~|Forward Transconductance<br>~~OD~~|110<br>~~OD~~|–––<br>~~OD~~|–––<br>~~OO~~<br>~~OD~~|S<br>~~OO~~<br>~~OD~~|VDS= 10V,ID= 41A<br>~~OD~~|
|Qg<br>~~a~~|Total Gate Charge|–––|75|110|nC|ID= 41A<br>VDS= 38V<br>VGS= 10V|
|Qgs|Gate-to-Source Charge|–––|18|–––|||
|Qgd<br>~~a~~<br>~~es~~|Gate-to-Drain Charge|–––|23|–––|||
|Qsync<br>~~a~~<br>~~es~~<br>~~es~~|Total Gate Charge Sync.(Qg–Qgd)|–––|52|–––|||
|td(on)<br>~~es~~<br>~~es~~<br>~~ee~~|Turn-On DelayTime<br>~~ee~~|–––<br>~~ee~~|7.3<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 38V<br>ID= 41A<br>RG= 2.7<br>VGS= 10V<br>~~ee~~|
|tr<br>~~es~~<br>~~ee~~|Rise Time<br>~~ee~~|–––<br>~~ee~~|16<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~ee~~|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~|53<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~es~~<br>~~a~~|Fall Time|–––|12|–––|||
|Ciss<br>~~es~~<br>~~a~~|Input Capacitance|–––|4030|–––|pF<br>~~es~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7<br>~~ee~~|
|Coss<br>~~es~~<br>~~a~~|Output Capacitance|–––|330|–––|||
|Crss<br>~~a~~|Reverse Transfer Capacitance|–––|200|–––|||
|Coss eff.(ER)<br>~~a~~<br>~~i~~<br>~~GO~~|Effective Output Capacitance<br>(Energy Related)<br>~~i~~<br>~~GO~~|–––<br>~~i~~<br>~~GO~~|290<br>~~i~~<br>~~GO~~|–––<br>~~i~~<br>~~GO~~||VGS= 0V, VDS = 0V to 60V<br>~~ee~~|
|Coss eff.(TR)<br>~~GO~~|Output Capacitance(Time Related)<br>~~GO~~|–––<br>~~GO~~|380<br>~~GO~~|–––<br>~~GO~~||VGS= 0V,VDS = 0V to 60V|
|**Diode Characteristics**<br>~~GO es~~|||||||
|**Symbol**<br>~~a~~|**Parameter**<br>~~G~~|**Min.**<br>~~G~~|**Typ.**<br>~~GD~~|**Max. Units**<br>~~D~~|**Max. Units**<br>~~D~~|**Max. Units**<br>**Conditions**<br>~~D~~|
|IS<br>~~a~~<br>~~se~~|Continuous Source Current<br>(BodyDiode)<br>~~G~~<br>~~se~~|–––<br>~~G~~<br>~~se~~|–––<br>~~GD~~<br>~~se~~|68<br>~~D~~<br>~~se~~|A<br>~~D~~<br>~~se~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.<br>D<br>S<br>G<br>~~D~~<br>~~se~~|
|ISM<br>~~se~~|Pulsed Source Current<br>(BodyDiode)<br>~~se~~|–––<br>~~se~~|–––<br>~~se~~|270<br>~~se~~|||
|VSD<br>~~a~~<br>~~pop~~|Diode Forward Voltage<br>~~pop~~|–––<br>|–––<br>|1.2<br>|V<br>|TJ= 25°C,IS= 41A,VGS= 0V|
|dv/dt<br>~~a~~<br>~~popee~~|Peak Diode Recoverydv/dt<br>~~popee~~|–––<br>~~ee~~|11<br>~~ee~~|–––<br>~~ee~~|V/ns T<br>~~ee~~|V/ns TJ= 150°C,IS= 41A,VDS= 75V|
|trr<br>~~popee~~|Reverse Recovery Time<br>~~popee~~|–––<br>~~ee~~|29<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~|TJ =25°CVDD= 64V<br>TJ =125°CIF= 41A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~ee~~|34<br>~~ee~~|–––<br>~~ee~~|||
|Qrr<br>~~ee~~<br>~~pf~~|Reverse Recovery Charge<br>~~ee ~~<br>~~pf~~|–––<br> ~~ee~~|30<br>~~ee~~|–––<br>~~ee~~|nC<br>~~ee~~||
|||–––|42|–––|||
|IRRM<br>~~pf~~|Reverse Recovery Current<br>~~pf~~|–––|1.7|–––|A||



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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V 6.0V<br>100 5.5V 100 5.5V<br>5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V 4.5V<br>10 10<br>4.5V<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>1 1<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 2.5<br>ID = 41A<br>VGS = 10V<br>100 2.0<br>|e TJ = 150°C LLL<br>10 1.5<br>1 AL TJ = 25°C Ha<br>1 1.0<br>EZae VDS = 25V Maa<br>60µs PULSE WIDTH<br>0.1 Af | 0.5 il<br>2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>14.0<br>100000<br>VGS   = 0V,       f = 1 MHZ ID= 41A<br>C C iss rss    = C  = C gs gd + Cgd,  C ds SHORTED 12.0 VDS= 60V<br>a Coss   = Cds + Cgd 10.0 VDS= 38V Ly<br>VDS= 15V<br>10000<br>[| 8.0 ye<br>EA Ciss LA Yo<br>6.0<br>1000 Coss 4.0<br>Crss<br>2.0<br>0.0<br>100 RSS) Peete<br>0 10 20 30 40 50 60 70 80 90 100<br>1 10 100<br> QG,  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

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1000<br>100 la) TJ = 150°C<br>TJ = 25°C<br>10<br>V GS  = 0V<br>1.0<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

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100 1msec 100µsec<br>GRA<br>a<br>OPERATION<br>10 IN THIS<br>AREA<br>LIMITED BY<br>RDS(on)<br>1<br>10msec<br>Tc = 25°C<br>DC<br>Tj = 150°C<br>Single Pulse<br>0.1<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Maximum Safe Operating Area 

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95 0.8<br>Id = 1.0mA<br>0.7<br>90 0.6<br>Ba<br>0.5<br>85 0.4<br>0.3<br>Hatt<br>80 LAL 0.2<br>0.1<br>75 LLL 0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 -10 0 10 20 30 40 50 60 70 80<br>TJ , Temperature ( °C )<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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40<br>Vgs = 5.5V<br>30<br>Vgs = 6.0V<br>Vgs = 7.0V<br>Vgs = 8.0V<br>Vgs = 10V<br>20 Noes<br>Vy y<br>10<br>0 PTT LL<br>0 20 40 60 80 100 120 140 160 180 200<br>ID, Drain Current (A)<br>)<br><br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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10<br>1 D = 0.50<br>0.20<br>0.10<br>0.1<br>0.05<br>Sp 0.02 Aen<br>0.01<br>0.01<br>SINGLE PULSE<br>Notes:<br>Se se ( THERMAL RESPONSE ) = ml 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 eA Zl 1E-005 we 0.0001 [OC] 0.001 AL 0.01 BL 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 125°C and<br>100 Tstart = 25°C (Single Pulse)<br>BEG ee<br>10<br>Seria Sele<br>(Ane? Allowed avalanche Current vs avalanche   Tin<br>1<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 125°C.<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02<br>tav (sec)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Avalanche Current vs. Pulse Width 

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120<br>TOP          Single Pulse<br>BOTTOM   1.0% Duty Cycle<br>100 I D  = 41A<br>a<br>tbs<br>80<br>60 NINE<br>40 INN<br>20<br>TTN NIE<br>tT NIN<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

1.Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a 

   - temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 16). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] 

      - EAS (AR) = PD (ave)·tav 

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IRFH7787PbF<br>TGR___—s<br>4.0 14<br>IF = 27A<br>3.5 a 12 V R  = 64V CT<br>TJ = 25°C<br>10<br>3.0 TJ = 125°C<br>E-<ennnsS ae<br>8<br>2.5 I D  = 100µA<br>ID = 250µA St 6 sa<br>2.0 ID = 1.0mA ALS 4 a<br>ID = 1.0A<br>1.5 PEELS a<br>2<br>1.0 TELE E EEE 0 TTTTTTT<br>-75 -50 -25 0 25 50 75 100 125 150 0 200 400 600 800 1000<br>TJ , Temperature ( °C ) diF /dt (A/µs)<br>VGS(th), Gate threshold Voltage (V)<br>IRRM (A)<br>**----- End of picture text -----**<br>


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14<br>IF = 27A<br>12 V R  = 64V CT<br>TJ = 25°C<br>10<br>TJ = 125°C<br>ae<br>8<br>6 sa<br>4 a<br>a<br>2<br>TT<br>0 TTTTTTT<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

**Fig 18.** Typical Recovery Current vs. dif/dt 

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14<br>IF = 41A<br>12 V R  = 64V<br>TJ = 25°C<br>10<br>TJ = 125°C<br>[te<br>-eee<br>8<br>| ot OT<br>6 ef<br>4<br>Ae<br>Ean<br>2<br>0 TLL<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


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250<br>IF = 27A<br>VR = 64V<br>200<br>TJ = 25°C<br>TJ = 125°C<br>ee<br>150 LEE<br>v  F ZA<br>| Le<br>100 Scan<br>50<br>-<br>0 FT] yf<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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300<br>IF = 41A<br>250 V R = 64V | ft<br>TJ = 25°C<br>200 T J = 125°C |e<br>150<br>100 | ernea<br>50 >=<br>TT]<br>0 | Lf<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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IRFH7787PbF 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>20V JL IAS<br>ae tp Y 0.01<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs(th) '<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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IRFH7787PbF 

## **PQFN 5x6 Outline "E" Package Details** 

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf 

For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.irf.com/technical info/appnotes/an 1154.pdf 

## **PQFN 5x6 Outline "E" Part Marking** 

**==> picture [86 x 19] intentionally omitted <==**

**----- Start of picture text -----**<br>
INTERNATIONAL<br>RECTIFIER LOGO<br>**----- End of picture text -----**<br>


**==> picture [295 x 122] intentionally omitted <==**

**----- Start of picture text -----**<br>
DATE CODE<br>XXXX P ART NUMBER<br>ASSEMBLY ~ (“4 or 5 digits”)<br>SITE CODE XYWWX M ARKING CODE<br>(Per SCOP 200-002) (Per Marking Spec)<br>XXXXX<br>PIN 1 -®@ \<br>IDENTIFIER<br>LOT CODE<br>(Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRFH7787PbF 

## ~~».».©§8»«.._—sWM§d sg~~ 

## **PQFN 5x6 Outline "E" Tape and Reel** 

NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. 

||||**REEL DIMENSIONS**|**REEL DIMENSIONS**|**REEL DIMENSIONS**|||||
|---|---|---|---|---|---|---|---|---|---|
|STANDARD OPTION**(QTY 4000)**|||||TR1 OPTION||TR1 OPTION**(QTY 400)**|||
||METRIC||IMPERIAL||METRIC|||IMPERIAL||
|CODE|MIN|MAX|MIN|MAX|MIN||MAX|MIN|MAX|
|A|329.5|330.5|12.972|13.011|177.5||178.5|6.988|7.028|
|B|20.9|21.5|0.823|0.846|20.9||21.5|0.823|0.846|
|C|12.8|13.5|0.504|0.532|13.2||13.8|0.520|0.543|
|D|1.7|2.3|0.067|0.091|1.9||2.3|0.075|0.091|
|E|97|99|3.819|3.898|65||66|2.350|2.598|
|F|Ref|17.4|||Ref||12|||
|G|13|14.5|0.512|0.571|13||14.5|0.512|0.571|



Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

10 

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IRFH7787PbF ~~[~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F††guidelines)||
|**Moisture Sensitivity Level**|PQFN 5mm x 6mm|MSL1<br>(per JEDEC J-STD-020D††)|
|**RoHS Compliant**|Yes||



- † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product info/reliability 

†† Applicable version of JEDEC standard at the time of product release. 

|**Revision History**||
|---|---|
|**Date**|**Comments**|
|2/19/2015|Updated EAS (L =1mH)= 146mJ  on page 2<br>Updated note 8  “Limited by TJmax, starting TJ= 25°C, L = 1mH, RG= 50, IAS= 17A, VGS=10V” on page 2|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRFH7787TRPBF/power-mosfet-strongirfettm-n-channel-75-v-68-a)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfh7787trpbf/mosfet-n-ch-75v-68a-pqfn/dp/2781125)
---

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