# Power MOSFET, N Channel, 60 V, 85 A, 5200 µohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:2709882RL/)

**URL**: https://novapart.co/products/IRFH7545TRPBF/power-mosfet-n-channel-60-v-85-a-5200-ohm-pqfn
**SKU**: IRFH7545TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4330
**Stock**: 1000+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | StrongIRFET, HEXFET |
| Qualification | - |
| Power Dissipation | 83W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PQFN |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 85A |
| Drain Source On State Resistance | 5200µohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2709882RL/)

## International ~~rortecifie~~ 

## Strong _IR_ FET™ IRFH7545PbF 

HEXFET[® ] Power MOSFET 

## **Application** 

-  Brushed Motor drive applications 

 Brushed Motor drive applications  BLDC Motor drive applications **VDSS 60V**  Battery powered circuits  Half-bridge and full-bridge topologies **RDS(on) typ. 4.3m**   Synchronous rectifier applications **max 5.2m**   Resonant mode power supplies  OR-ing and redundant power switches ~~=~~ **ID 85A** 

-  DC/DC and AC/DC converters 

-  DC/AC Inverters 

## **Benefits** 

-  Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

-  Fully Characterized Capacitance and Avalanche SOA 

-  Enhanced body diode dV/dt and dI/dt Capability 

-  Lead-Free, RoHS Compliant 

PQFN 5 x 6 mm 

|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRFH7545PbF|PQFN 5mm x 6mm|Tape and Reel|4000|IRFH7545TRPbF|



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20<br>100<br>ID = 51A<br>80<br>15<br>Re w/t {|<br>60<br>10<br>TJ = 125°C<br>MTT) = 40 FNL<br>Meee N<br>5<br>20<br>il tin T eee J = 25°C s PTT TN<br>0 LE PETE<br>0<br>2 4 6 8 10 12 14 16 18 20<br>25 50 75 100 125 150<br>VGS, Gate -to -Source Voltage  (V)  TC , Case Temperature (°C)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

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IRFH7545PbF 

## **Absolute Maximum Rating** 

|**Absolute Maximum Rating**|||||
|---|---|---|---|---|
|**Symbol**<br>**Parameter**|||**Max.**|**Units**|
|ID @TC(Bottom)= 25°C<br>Continuous Drain Current,VGS @10V|||85||
|ID @TC(Bottom)= 100°C<br>Continuous Drain Current,VGS @10V|||54|A|
|IDM<br>Pulsed Drain Current|||340||
|PD @TC= 25°C<br>Maximum Power Dissipation|||83|W|
|Linear DeratingFactor|||0.67|W/°C|
|VGS<br>Gate-to-Source Voltage|||± 20|V|
|TJ<br>TSTG<br>Operating Junction and<br>Storage Temperature Range|||-55  to + 150|°C|
|**Avalanche Characteristics**|||||
|EAS (Thermally limited)<br>SinglePulseAvalancheEnergy <br>102<br>mJ<br>EAS (Thermally limited)<br>Single Pulse Avalanche Energy<br>160<br>IAR<br>Avalanche Current<br>See Fig 15, 16, 23a, 23b<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>~~———~~|||||
|**Thermal Resistance**|||||
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJC(Bottom)<br>Junction-to-Case<br>–––<br>1.5<br>RJC (Top)<br>Junction-to-Case<br>–––<br>22<br>RJA<br>Junction-to-Ambient<br>–––<br>34<br>RJA (<10s)<br>Junction-to-Ambient<br>–––<br>23<br>°C/W<br>~~——~~|||||
|**Static@ TJ = 25°C(unless otherwise specified)**|||||
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>60<br>–––<br>–––<br>V<br>VGS= 0V,ID= 250µA<br>V(BR)DSS/TJBreakdown Voltage Temp. Coefficient<br>–––<br>49<br>–––<br>mV/°C Reference to 25°C, ID= 1mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>4.3<br>5.2<br>m<br>VGS= 10V,ID= 51A<br>VGS(th)<br>Gate Threshold Voltage<br>2.1<br>–––<br>3.7<br>V<br>VDS= VGS,ID= 100µA<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>1.0<br>µA<br>VDS=60 V,VGS= 0V<br>–––<br>–––<br>150<br>VDS=60V,VGS= 0V,TJ=125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>RG<br>Gate Resistance<br>–––<br>2.5<br>–––<br><br>–––<br>6.0<br>–––<br>VGS= 6.0V,ID= 26A<br>~~——_~~|||||
|**Notes:**|||||
|Repetitive rating; pulse width limited by max. junction temperature.|||||



-   Limited by TJmax, starting TJ = 25°C, L = 78µH, RG = 50, IAS = 51A, VGS =10V. 

- ISD  51A, di/dt  1212A/µs, VDD  V(BR)DSS, TJ 175°C. 

- Pulse width  400µs; duty cycle  2%. 

-  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

-  R is measured at TJ approximately 90°C. 

-  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 18A, VGS =10V. 

-     When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details: 

- - http://www.irf.com/technical info/appnotes/an 994.pdf 

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**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~pO~~|**Parameter**<br>~~pO~~|**Min.**<br>~~pO~~|**Typ. **<br>~~pO~~|**Max. Units**<br>~~pO~~|**Max. Units**<br>~~pO~~|**Max. Units**<br>**Conditions**<br>~~pO~~|
|---|---|---|---|---|---|---|
|gfs<br>~~a~~|Forward Transconductance|140|–––|–––|S|VDS= 10V,ID= 51A|
|Qg<br>~~a~~|Total Gate Charge|–––|73|110|nC|ID= 51A<br>VDS= 30V<br>VGS= 10V|
|Qgs|Gate-to-Source Charge|–––|19|–––|||
|Qgd<br>~~a~~|Gate-to-Drain Charge|–––|22|–––|||
|Qsync<br>~~a~~<br>~~a~~|Total Gate Charge Sync.(Qg–Qgd)<br>|–––<br>|51<br>|–––<br>|||
|td(on)<br>~~sO~~|Turn-On DelayTime<br>~~sO~~|–––<br>~~sO~~|8.6<br>~~sO~~|–––<br>~~sO~~|ns<br>~~a~~|VDD= 30V<br>ID= 51A<br>RG= 2.7<br>VGS= 10V<br>~~a~~|
|tr<br>~~a~~|Rise Time<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|26<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|||
|td(off)<br>~~a~~|Turn-Off DelayTime<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|43<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|||
|tf|Fall Time|–––|16|–––|||
|Ciss|Input Capacitance|–––|3890|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7|
|Coss|Output Capacitance|–––|365|–––|||
|Crss|Reverse Transfer Capacitance|–––|220|–––|||
|Coss eff.(ER)<br>~~a~~|Effective Output Capacitance<br>(Energy Related)<br>~~a~~|–––<br>~~a~~|370<br>~~a~~|–––<br>~~a~~||VGS= 0V, VDS = 0V to 48V|
|Coss eff.(TR)<br>~~GD~~|Output Capacitance (Time Related)<br>~~GD~~|–––<br>~~GD~~|470<br>~~GD~~|–––<br>~~GD~~||VGS= 0V, VDS = 0V to 48V|
|**Diode Characteristics**|||||||
|**Symbol**<br>~~pf~~|**Parameter**<br>~~pf~~|**Min.**<br>~~pf~~|**Typ.**<br>~~pf~~|**Max. Units**<br>~~pf~~|**Max. Units**<br>~~pf~~|**Max. Units**<br>**Conditions**<br>~~pf~~|
|IS<br>~~SSS~~|Continuous Source Current<br>(BodyDiode)<br>~~SSS~~|–––<br>~~SSS~~|–––|85|A<br>~~OO~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.<br>D<br>S<br>G<br>~~ee~~|
|ISM<br>~~SSS~~|(odyode)<br>Pulsed Source Current<br>(BodyDiode)<br>~~SSS~~|–––<br>~~SSS~~|–––|340<br>~~OO~~|||
|VSD<br>~~a DG~~|Diode Forward Voltage<br>~~DG~~|–––<br>~~DG~~|–––<br>~~DG~~|1.2<br>~~DG~~<br>~~OO~~|V<br>~~DG~~<br>~~OO~~|TJ= 25°C,IS= 51A,VGS= 0V<br>~~DG~~|
|dv/dt|Peak Diode Recoverydv/dt|–––|8.1|–––<br>~~OO~~|V/ns T<br>~~OO~~|V/ns TJ= 150°C,IS= 51A,VDS= 60V|
|trr<br>~~ee~~<br>~~ee~~|Reverse Recovery Time<br>~~ee~~<br>|–––<br>~~ee~~|32<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~<br>|TJ =25°CVDD= 51V<br>TJ =125°CIF= 51A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~ee~~<br>|34<br>~~ee~~<br>|–––<br>~~ee~~<br>|||
|Qrr<br>~~ee~~<br>~~ee~~|Reverse Recovery Charge<br>~~ee~~<br>|–––<br>~~ee~~<br>|30<br>~~ee~~<br>|–––<br>~~ee~~<br>|nC<br>~~ee~~<br>||
|||–––<br>~~ee~~<br>|38<br>~~ee~~<br>|–––<br>~~ee~~<br>|||
|IRRM<br>~~eepo~~|Reverse Recovery Current<br>~~po~~|–––<br>~~po~~|1.7<br>~~po~~|–––<br>~~po~~|A<br>~~po~~||



3 ~~SR~~ 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V 6.0V<br>100 5.5V 5.0V 100 5.5V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>4.5V<br>10 10<br>4.5V<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>1 1<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 2.4<br>ID = 51A<br>: VGS = 10V TILL<br>2.0<br>100<br>T J  = 150°C TJ = 25 ° C 1.6<br>10 cae Tt<br>1.2<br>ar BOUENDZANE<br>1<br>Ean 0.8 TATE<br>VDS = 25V<br>60µs PULSE WIDTH<br>0.1 fil 0.4 ATLL<br>2 3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 14.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED ID = 51A<br>C rss    = C gd  12.0 VDS= 48V<br>Coss  = Cds + Cgd 10.0 V DS = 30V<br>10000 VDS= 12V<br>[ 8.0 any a<br>Ciss<br>6.0<br>1000 Sai eu Coss all a aa<br>Crss 4.0<br>2.0<br>litt: nee<br>100 Tha 0.0 A<br>0.1 1 10 100 0 20 40 60 80 100<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>Fig 8.   Typical Gate Charge vs.<br>Fig 7.   Typical Capacitance vs. Drain-to-Source Voltage<br>Gate-to-Source Voltage<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Normalized On-Resistance vs. Temperature 

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## ~~TOR~~ 

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1000<br>100<br>TJ = 150°C TJ = 25°C<br>10<br>1<br>VGS = 0V<br>0.1<br>0.1 0.4 0.7 1.0 1.3 1.6<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

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78<br>Id = 1.0mA<br>76 PEE<br>74 PEELE ELA<br>72 BERREP ZEEE<br>70 BREPZaneaae<br>68<br>EDZARREREEE<br>ALE<br>66<br>64 PL [ELELLEL] EL ELLEL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Temperature ( °C )<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

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100 100µsec<br>10 OPERATION IN THIS  1msec<br>AREA LIMITED BY RDS(on)<br>1 10msec<br>Tc = 25°C<br>Tj = 150 ° C DC<br>Single Pulse<br>0.1<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Maximum Safe Operating Area 

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0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 12.** Typical Coss Stored Energy 

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20.0<br>VGS = 5.5V<br>VGS = 6.0V<br>VGS = 7.0V<br>15.0 VGS = 8.0V<br>VGS = 10V<br>Me<br>10.0<br>Bane<br>5.0<br>0.0<br>0 50 100 150 200<br>ID, Drain Current (A)<br>)<br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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10<br>BEA<br>1<br>D = 0.50<br>0.20<br>0.10<br>0.1 0.05<br>0.02<br>0.01<br>0.01<br>SINGLE PULSE Notes:<br>=f ( THERMAL RESPONSE ) zcaill BO a 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>rtf su UN<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 125 ° C and<br>Tstart =25°C (Single Pulse)<br>ee ee BY<br>Seo |_<br>10<br>att Se ee ee<br>1<br>BEN BN ain Ssh<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 125°C.<br>0.1 Paeeee e reenee aa | eee Thaa<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Avalanche Current vs. Pulse Width 

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120<br>TOP          Single Pulse<br>BOTTOM   1.0% Duty Cycle<br>100 I D  = 51A<br>Klee<br>Niessen<br>80<br>60<br>NNT<br>40<br>IN NT<br>20<br>TWINS<br>BEREEASSES<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

1.Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

EAS (AR) = PD (ave)·tav 

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4.5<br>4.0<br>TO.<br>3.5 CSRECCEEE<br>3.0<br>ThPSPS<br>2.5<br>SSS<br>2.0 ID = 100µA<br>Zane<br>ID = 250µA<br>ID = 1.0mA<br>1.5<br>ID = 1.0A<br>ATT PCEPEERS  NS<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

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12<br>IF = 51A<br>VR = 51V<br>9 T J = 25°C Ty Te<br>TJ = 125°C<br>Pep<br>6<br>Pe AO<br>Lea fe<br>3 Mane<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


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12<br>IF = 34A<br>VR = 51V<br>9 T J = 25°C TT I.<br>;<br>TJ = 125°C<br>6 |<br>Leb<br>an<br>3 eT |<br>aT TT<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

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200<br>IF = 34A<br>175 V R  = 51V<br>TJ = 25°C TT<br>150 T J  = 125°C<br>125<br>ie<br>100<br>a<br>75 oP<br>50<br>SEEa<br>25<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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200<br>IF = 51A<br>TT<br>175 V R  = 51V<br>TJ = 25°C<br>eee<br>150 T J  = 125°C aaa<br>125<br>100 TTT<br>75 tr<br>a<br>50<br>ee<br>25 P L<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>20V JL IAS<br>ae tp Y 0.01<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

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**----- Start of picture text -----**<br>
VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

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**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th) '<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

8 www.irf.com © 2014 International Rectifier 

Submit Datasheet Feedback                       November 7, 2014 

IRFH7545PbF 

## **PQFN 5x6 Outline "E" Package Details** 

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf 

For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.irf.com/technical info/appnotes/an 1154.pdf 

## **PQFN 5x6 Outline "E" Part Marking** 

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**----- Start of picture text -----**<br>
INTERNATIONAL<br>RECTIFIER LOGO<br>**----- End of picture text -----**<br>


**==> picture [295 x 122] intentionally omitted <==**

**----- Start of picture text -----**<br>
DATE CODE<br>XXXX - P ART NUMBER<br>ASSEMBLY ~ (“4 or 5 digits”)<br>SITE CODE L XYWWX m — M ARKING CODE<br>(Per SCOP 200-002) (Per Marking Spec)<br>XXXXX<br>PIN 1 -® \<br>IDENTIFIER<br>LOT CODE<br>(Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

9 www.irf.com © 2014 International Rectifier 

Submit Datasheet Feedback                       November 7, 2014 

~~16aR~~ 

IRFH7545PbF ~~[|~~ 

## **PQFN Tape and Reel** 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**||
|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F††guidelines)|
|**Moisture Sensitivity Level**<br>PQFN 5mm x 6mm|PQFN 5mm x 6mm<br>MSL1<br>(per JEDEC J-STD-020D††)|
|**RoHS Compliant**|Yes|



- † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product info/reliability 

†† Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Revision History**|**Revision History**|
|---|---|
|**Date**|**Comments**|
|8/21/2014|Updated data sheet with latest PQFN Tape and Reel on page 10.|
|11/7/2014|<br>Updated EAS (L =1mH)= 160mJ  on page 2<br><br>Updated note 8  “Limited byTJmax,startingTJ= 25°C,L = 1mH,RG= 50,IAS= 18A,VGS=10V” onpage 2|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com        © 2014 International Rectifier Submit Datasheet Feedback                       November 7, 2014 ~~= _~~ 

10 ~~=~~ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFH7545TRPBF/power-mosfet-n-channel-60-v-85-a-5200-ohm-pqfn)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfh7545trpbf/mosfet-n-ch-60v-85a-pqfn/dp/2709882RL)
---

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