# Power MOSFET, N Channel, 100 V, 35 A, 0.0137 ohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:2725938/)

**URL**: https://novapart.co/products/IRFH7194TRPBF/power-mosfet-n-channel-100-v-35-a-00137-ohm-pqfn
**SKU**: IRFH7194TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3360
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | FastIRFET HEXFET |
| Power Dissipation | 39W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 39W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0137ohm |
| Transistor Case Style | PQFN |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 35A |
| Drain Source On State Resistance | 0.0137ohm |
| Gate Source Threshold Voltage Max | 3.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725938/)

International ~~TR Rectifier~~ 

Fast _IR_ FET™ IRFH7194PbF ~~po~~ 

## HEXFET[® ] Power MOSFET 

|**VDSS**|**100**|**V**|
|---|---|---|
|**RDS(on)max**<br>(@VGS= 10V)|**16.4**|**m**|
|**Qg (typical)**|**13**|**nC**|
|**Rg (typical)**|**2.1**||
|**ID**<br>**(@TC (Bottom) = 25°C)**|**35**|**A**|



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PQFN 5X6 mm<br>**----- End of picture text -----**<br>


## **Applications** 

- Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies 

- Secondary Side Synchronous Rectifier 

|**Features**||**Benefits**|
|---|---|---|
|Low RDS(ON)(< 16.4m)||Lower Conduction Losses|
|Low Thermal Resistance to PCB(<3.2°C/W)||Increased Power Density|
|100%RgTested||Increased Reliability|
|Low Profile(<1.05 mm)|results in Increased Power Densit|results in Increased Power Density|
|Industry-Standard Pinout||Multi-Vendor Compatibility|
|Compatible with Existing Surface Mount Techniques|ues|ues<br>Easier Manufacturing|
|RoHS Compliant,Halogen-Free||EnvironmentallyFriendlier|
|MSL1||IncreasedReliability|



|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRFH7194PbF|PQFN 5mm x 6 mm|Tape and Reel|4000|IRFH7194TRPbF|



## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VGS|Gate-to-Source Voltage|± 20|V|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|11|A|
|ID@ TC(Bottom)= 25°C|Continuous Drain Current, VGS@ 10V|35||
|ID@ TC(Bottom)= 100°C|Continuous Drain Current, VGS@ 10V|22||
|IDM|Pulsed Drain Current|140||
|PD@TA= 25°C|Power Dissipation|3.6|W|
|PD@TC(Bottom)= 25°C|Power Dissipation|39||
||Linear Derating Factor|0.03|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|



Notes  through are on page 8 

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## ~~IéaR~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Static @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Parameter**|**Min.**|**Typ. **|**Max.**||**Units**||**Conditions**||||||
|BVDSS<br>Drain-to-Source Breakdown Voltage|100|–––|–––||V|VGS= 0V|= 0V,ID= 250µA||||||
|BVDSS/TJBreakdown Voltage Temp. Coefficient|–––|78|–––||mV/°C Reference to 25°C|mV/°C Reference to 25°C,ID= 1mA||= 1mA||||= 1mA|
|RDS(on)<br>Static Drain-to-Source On-Resistance|–––|13.7|16.4||m|VGS= 10V|= 10V,ID= 21A||||||
|VGS(th)<br>Gate Threshold Voltage|2.0|–––|3.6||V|VDS= V|= VGS, ID= 50µA||||||
|VGS(th)<br>Gate Threshold Voltage Coefficient|–––|-5.2|–––||mV/°C|mV/°C|||||||
|IDSS<br>Drain-to-Source Leakage Current|–––|–––|1.0||µA|VDS= 80V|= 80V,VGS= 0V||||||
|IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>gfs<br>Forward Transconductance<br>45<br>–––<br>–––<br>S<br>VDS= 25V,ID= 21A<br>~~—~~|||||||||||||
|Qg<br>Total Gate Charge|–––|13|19||||||||||
|Qgs1<br>Pre-Vth Gate-to-Source Charge|–––|1.8|–––|||VDS= 50V|= 50V||||||
|Qgs2<br>Post-Vth Gate-to-Source Charge|–––|0.9|–––||nC|VGS= 10V|= 10V||||||
|Qgd<br>Gate-to-Drain Charge|–––|4.3|–––|||ID= 21A|||||||
|Qgodr<br>Gate Charge Overdrive|–––|6.0|–––||||||||||
|Qsw<br>Switch Charge(Qgs2+ Qgd)|–––|5.2|–––||||||||||
|Qoss<br>Output Charge|–––|40|–––||nC|VDS= 50V|= 50V,VGS= 0V||||||
|RG<br>Gate Resistance|–––|2.1|–––||||||||||
|td(on)<br>Turn-On DelayTime|–––|2.7|–––|||VDD= 50V, V|= 50V, VGS= 10V|= 10V|||||
|tr<br>Rise Time|–––|3.3|–––||ns|ID= 21A|||||||
|td(off)<br>Turn-Off DelayTime|–––|8.0|–––|||RG= 1.0|||||||
|tf<br>Fall Time|–––|2.5|–––||||||||||
|Ciss<br>Input Capacitance<br>–––<br>733<br>–––<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>374<br>–––<br>pF<br>VDS= 50V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>11<br>–––<br>ƒ= 1.0MHz<br>~~ee~~|||||||||||||
|**Diode Characteristics**|||||||||||||
|**Parameter**|**Min.**|**Typ. **|**Max.**||**Units**||**Conditions**||||||
|IS<br>Continuous Source Current<br>(BodyDiode)|–––|–––|35||A|MOSFET symbol<br>showing  the||||||D|
|ISM<br>Pulsed Source Current|–––|–––|140|||integral reverse||G|||||
|(BodyDiode) ||||||p-njunction diode.||||||S|
|VSD<br>Diode Forward Voltage<br>–––<br>0.8<br>1.3<br>V<br>TJ= 25°C,IS= 21A,VGS=0V<br>trr<br>Reverse RecoveryTime<br>–––<br>30<br>45<br>ns<br>TJ= 25°C, IF= 21A, VDD= 50V<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>26<br>39<br>nC<br>di/dt = 100A/µs<br>~~ee~~|||||||||||||
|**Avalanche Characteristics**|||||||||||||
|**Parameter**<br>**Typ. **<br>**Max.**<br>**Units**<br>EAS (Thermally limited)<br>Single Pulse Avalanche Energy<br>–––<br>220<br>mJ<br>IAR<br>Avalanche Current<br>–––<br>12<br>A<br>~~———————~~|||||||||||||
|**Thermal Resistance**|||||||||||||
|**Parameter**|||||**Typ. **|**.**|**Max.**||||**Units**||
|RJC (Bottom)Junction-to-Case|||||–––||3.2||||||
|RJC (Top)<br>Junction-to-Case|||||–––||22||||°C/W||
|RJA<br>Junction-to-Ambient|||||–––||35||||||
|RJA (<10s)<br>Junction-to-Ambient|||||–––||20||||||



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IRFH7194PbF 

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1000<br> 60µs PULSE WIDTH<br>Tj = 25 ° C<br>100 Seeaeat Seaiilll<br>Pill angi ae a<br>10 ZAllll<br>LU [Fees]<br>VGS<br>1 TOP           15V<br>10V<br>7.0V<br>Fer 3.8V AT 6.0V<br>0.1 5.0V<br>4.5V<br>4.0V<br>Tm BOTTOM 3.8V<br>0.01 Pe Eee<br>0.1 1 10 100<br>VDS , Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>——<br>es ee ee<br>100<br>ee<br>TJ  = 150°C<br>Fw\/ an<br>10<br>—tO T J  = 25°C<br>1 Ppo/sff,<br>/ae V DS  = 50V<br> 60µs PULSE WIDTH<br>0.1 fe<br>ELT<br>2.0 3.0 4.0 5.0 6.0<br>VGS , Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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1000<br> 60µs PULSE WIDTH<br>Tj = 150°C<br>a a EEE EH<br>100<br>FLAT<br>eepee<br>eeert sae|<br>10<br>VGS<br>TOP           15V<br>10V<br>3.8V 7.0V<br>1 Zgsillieaa tll 6.0V |<br>5.0V<br>4.5V<br>4.0V<br>eri<br>BOTTOM 3.8V<br>0.1 ee a<br>0.1 1 10 100<br>VDS , Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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2.0<br>I = 21A<br>D<br>1.8 V GS  = 10V ELLEJj | | | | 7 |<br>1.6 TTT LY<br>1.4 Saeneeeeaee/<br>1.2<br>VA<br>1.0 LLL AEA<br>0.8 EePpZennneeeA<br>p74neeneene<br>0.6 -4eeeeeeeee<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source O n Resistance                        (Norm alized)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

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100000 14<br>VGS    = 0V,       f = 1 MHZ<br>I = 21A<br>C C iss    = C = C gs  + C gd ,  C ds  SHORTED 12 D V DS = 80V<br>rss   gd  V D S = 50V<br>C = C + C<br>10000 fo oss   ds  gd 10 a4 V DS = 20V<br>eet ee eee |<br>ee ee | 8 P| Vian<br>C oss ee ee ee ee |<br>1000 C<br>iss 6<br>FEE C rss NT 4 faa Ala<br>100 =} uy | EM Ly<br>2<br>0<br>TE PNG fiji<br>10 AN 0 4 8 | 12 16<br>0.1 1 10 100<br> Q G  Total Gate Charge (nC)<br>VDS , Drain-to-Source Voltage (V)<br>VG S, G ate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5. Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS (on)<br>ee ee 100 See north Sarit<br>100 ee aa = “ey ra 100µsec<br>1msec<br>a TJ  = 150°C so 10 Seca Meet<br>10 pV Kf | SSeS ea<br>Ea as 1 SESE 10msec a<br>T = 25 ° C<br>J<br>1 ey Ae Ae ee ai eaeae<br>0.1 Tc = 25°C<br>Tj = 150°C DC<br>V GS  = 0V Single Pulse<br>H+ fl _f| _| _ et cs:<br>0.1 0.01<br>Poy ie Sri Seni<br>0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100<br>VDS ,  Drain-toSource Voltage (V)<br>VSD , Source-to-Drain Voltage (V)<br>Fig 7.   Typical Source-Drain Diode Forward Voltage  Fig 8.   Maximum Safe Operating Area<br>40 4.0<br>3.5<br>30 aNeNe ee ee eee<br>~ 3.0 aN Tee<br>20<br>pf | ON 2.5 ID  KRESS = 50µA |<br>ID = 250µA<br>10 | fp iA 2.0 ID = 1.0mA SSS<br>ID  = 1.0A<br>0 1.5<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br>TC , CaseTemperature (°C) TJ , Temperature ( °C )<br>ISD, R everse D rain C urrent (A) ID,  Drain-to-Source Current (A)<br>VG S(th) G ate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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40<br>30 aNeNe ee ee eee<br>~<br>20<br>pf | ON<br>10<br>| fp iA<br>0<br>25 50 75 100 125 150<br>TC , CaseTemperature (°C)<br>ID  , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Threshold Voltage vs. Temperature 

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10<br>D = 0.50<br>1 STaeerIl<br>0.20<br>SS ccc ere ea ee eee —— eee ee eee eetaeeell<br>0.10<br>0.05<br>0.1 Po TI A<br>0.02<br>0.01<br>| | LH |e<br>0.01<br>Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>a anti a eee 2. Peak Tj = P dm x Zthjc + Tc anil<br>0.001 PAL ee | maatll<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Therm al Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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100<br>ss 6 0<br>Allow ed avalanche Current vs avalanche<br>pulsew idth, tav, assuming   Tj = 125°C and<br>Tstart =25°C (Single Pulse)<br>SSN<br>10<br>SST<br>ee eee 00 ee et ee!<br>Pot OE ON NA<br>RY YENI Zi SNORE EPL<br>1<br>PEI EIPET<br>Allow ed avalanche Current vs avalanche<br>pulsew idth, tav, assuming   j = 25°C and<br>Tstart = 125 ° C. (Single Pulse)<br>ce01 || ||| ||<br>PE<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Typical Avalanche Current vs. Pulse Width 

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60<br>I = 21A<br>D<br>50<br>40<br>PEELE<br>30<br>EEE TJ  = 125°C<br>20<br>SEES,<br>10 fisseeene T = 25°C<br>J<br>0 PEELE [Le]<br>2 4 6 8 10 12 14 16 18 20<br>VGS,  Gate -to -Source Voltage  (V)<br>)<br><br>RDS(on),  Drain-to -Source O n Resistance (m<br>**----- End of picture text -----**<br>


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1000<br>                 I<br>D<br>TOP           2.9A<br>800                 4.6A<br>BOTTOM    12A<br>600 Nee<br>400 PRE<br>200 IN<br>Wo<br>0 SSA“ee<br>25 50 75 100 125 150<br>Starting T J, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (m J)<br>**----- End of picture text -----**<br>


**Fig 13.** On–Resistance vs. Gate Voltage 

**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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**Fig 15.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U .T +<br>- [V][D D]<br>IA S<br>20V<br>tp 0.01 <br>**----- End of picture text -----**<br>


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V (B R )D S S<br>— tp —><br>I A S<br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17a.** Switching Time Test Circuit 

**Fig 17b.** Switching Time Waveforms 

**Fig 18.** Gate Charge Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>Vgs<br>|<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 19.** Gate Charge Waveform 

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## **PQFN 5x6 Outline "B" Package Details** 

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.irf.com/technical info/appnotes/an 1154.pdf 

**PQFN 5x6 Outline "B" Part Marking** 

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**----- Start of picture text -----**<br>
INTERNATIONAL<br>RECTIFIER LOGO<br>**----- End of picture text -----**<br>


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DATE CODE<br>| XXXX I e z R;| P ART NUMBER<br>ASSEMBLY (“4 or 5 digits”)<br>SITE CODE | XYWWX M ARKING CODE<br>(Per SCOP 200-002) (Per Marking Spec)<br>XXXXX<br>PIN 1<br>IDENTIFIER<br>| LOT CODE<br>(Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRFH7194PbF 

## **PQFN 5x6 Outline "B" Tape and Reel** 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

## **Qualifiction Information[† ]** 

|**Qualifiction Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F††guidelines)||
|**Moisture Sensitivity Level**|PQFN 5mm x 6mm|MSL1<br>(per JEDEC J-STD-020D††)|
|**RoHS Compliant**|Yes||



- 

- † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product info/reliability/ 

- †† Applicable version of JEDEC standard at the time of product release. 

## **Notes:** 

-   Repetitive rating;  pulse width limited by max. junction temperature. 

-    Starting TJ = 25°C, L = 3.0mH, RG = 50, IAS = 12A. 

-  Pulse width  400µs; duty cycle  2%. 

-   R is measured at TJ of approximately 90°C. 

-   When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details: - - 

- http://www.irf.com/technical info/appnotes/an 994.pdf 

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRFH7194TRPBF/power-mosfet-n-channel-100-v-35-a-00137-ohm-pqfn)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irfh7194trpbf/mosfet-n-ch-100v-35a-pqfn/dp/2725938)
---

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