# Power MOSFET, N Channel, 100 V, 80 A, 0.0062 ohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:2725937/)

**URL**: https://novapart.co/products/IRFH7191TRPBF/power-mosfet-n-channel-100-v-80-a-00062-ohm-pqfn
**SKU**: IRFH7191TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6350
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | FastIRFET HEXFET |
| Power Dissipation | 104W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 104W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0062ohm |
| Transistor Case Style | PQFN |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 80A |
| Drain Source On State Resistance | 0.0062ohm |
| Gate Source Threshold Voltage Max | 3.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725937/)

Fast _IR_ FET™ IRFH7191PbF 

HEXFET[® ] Power MOSFET 

**VDSS 100 V RDS(on) max 8.0 m**  (@ VGS = 10V) **Qg (typical) 26 nC Rg (typical) 1.0**  **ID 80 A (@TC (Bottom) = 25°C)** 

   - PQFN 5X6 mm 

- **Applications**  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies 

-  Secondary Side Synchronous Rectifier 

-  Hot Swap and Active O-Ring 

|**Features**||||||||**Benefits**|**Benefits**|**Benefits**||
|---|---|---|---|---|---|---|---|---|---|---|---|
|Low RDS(ON)(<8.0m)||||||||Lower Conduction Losses||||
|Low Thermal Resistance to PCB (|Low Thermal Resistance to PCB (<1.2°C/W)|||||||Increased Power Density||||
|100% Rg Tested||||||||Increased Reliability||||
|Low Profile (<1.05 mm)|1.05 mm)|||||results in||Increased Power Density||||
|Industry-Standard Pinout||||||||Multi-Vendor Compatibility||||
|Compatible with Existing Surface Mount Techniques|Compatible with Existing Surface Mount Techniques|Compatible with Existing Surface Mount Techniques|Compatible with Existing Surface Mount Techniques|Compatible with Existing Surface Mount Techniques|Compatible with Existing Surface Mount Techniques|Compatible with Existing Surface Mount Techniques||Easier Manufacturing||||
|RoHS Compliant, Halogen-Free||||||||Environmentally Friendlier||||
|MSL1||||||||Increased Reliability||||
|||||||||||||
|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>IRFH7191PbF<br>PQFN 5mm x 6 mm<br>Tape and Reel<br>4000<br>IRFH7191TRPbF<br>~~re~~||||||||||||
|**Absolute Maximum Ratings **||||||||||||
||**Parameter**||||**Parameter**|||||**Max.**|**Units**|
|VGS|Gate-to-Source Voltage|||||||||± 20|V|
|ID@ TA= 25°C|Continuous Drain Current, V||Continuous Drain Current, VGS@ 10V|@ 10V|@ 10V|||||15||
|ID@ TC(Bottom)= 25°C<br>ID@ TC(Bottom)= 100°C|Continuous Drain Current, V<br>Continuous Drain Current, V||Continuous Drain Current, VGS@ 10V<br>Continuous Drain Current, VGS@ 10V|@ 10V<br>@ 10V|@ 10V<br>@ 10V|||||80<br>51|A|
|IDM|Pulsed Drain Current|||||||||234||
|PD@TA= 25°C|Power Dissipation|||||||||3.6|W|
|PD@TC(Bottom)= 25°C|Power Dissipation|||||||||104||
||Linear Derating Factor|||||||||0.03|W/°C|
|TJ|Operating Junction and|||||||||-55  to + 150|°C|
|TSTG|Storage Temperature Range|||||||||||



Notes  through   are on page 9 

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**Static @ TJ = 25°C (unless otherwise specified)** 

|**Static @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|**Static @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|
|---|---|
|**Parameter**<br>**Min.**<br>**Typ. **<br>**Max.**<br>**Units**<br>**Conditions**<br>BVDSS<br>Drain-to-Source Breakdown Voltage<br>100<br>–––<br>–––<br>V<br>VGS= 0V,ID= 250µA<br>BVDSS/TJBreakdown Voltage Temp. Coefficient<br>–––<br>103<br>–––<br>mV/°C Reference to 25°C,ID= 1mA<br>~~nD~~<br>~~ID(TD(S(O~~<br>~~a~~<br>~~I~~~~**D** I (I ~~~~**(**OR (OO~~<br>~~es~~<br>~~n~~<br>~~I SSQD I~~||
|RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>6.2<br>8.0<br>m|VGS= 10V,ID= 48A|
|VGS(th)<br>Gate Threshold Voltage<br>2.0<br>–––<br>3.6<br>V<br>VDS= VGS, ID= 100µA<br>VGS(th)<br>Gate Threshold Voltage Coefficient<br>–––<br>-4.9<br>–––<br>mV/°C<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>1.0<br>µA<br>VDS= 80V,VGS= 0V<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>gfs<br>Forward Transconductance<br>112<br>–––<br>–––<br>S<br>VDS= 25V,ID= 48A<br>~~eenn~~<br>~~I I~~<br>~~en~~<br>~~esnD~~<br>~~(ID(OD(OO~~<br>~~ee~~<br>~~ee~~<br>~~PO~~||
|Qg<br>Total Gate Charge<br>–––<br>26<br>39||
|Qgs1<br>Pre-Vth Gate-to-Source Charge<br>–––<br>4.7<br>–––<br>VDS= 50V<br>Qgs2<br>Post-Vth Gate-to-Source Charge<br>–––<br>1.9<br>–––<br>nC<br>VGS= 10V<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>8.3<br>–––<br>ID= 48A<br>Qgodr<br>Gate Charge Overdrive<br>–––<br>12<br>–––<br>Qsw<br>Switch Charge(Qgs2+Qgd)<br>–––<br>10<br>–––<br>Qoss<br>Output Charge<br>–––<br>80<br>–––<br>nC<br>VDS= 50V,VGS= 0V<br>RG<br>Gate Resistance<br>–––<br>1.0<br>–––<br><br>~~eees~~<br>~~ee~~<br>~~ee~~<br>~~eees~~<br>~~a nD~~<br>~~I (I SS (OO~~<br>~~es~~<br>~~ID I~~<br>~~ID ID (OI~~||
|td(on)<br>Turn-On DelayTime<br>–––<br>4.5<br>–––|VDD= 50V, VGS= 10V|
|tr<br>Rise Time<br>–––<br>6.1<br>–––<br>ns|ID= 48A|
|td(off)<br>Turn-Off DelayTime<br>–––<br>10.6<br>–––<br>tf<br>Fall Time<br>–––<br>3.6<br>–––<br>~~es~~|RG= 1.0|
|Ciss<br>Input Capacitance<br>–––<br>1685<br>–––<br>Coss<br>Output Capacitance<br>–––<br>836<br>–––<br>pF<br>~~esns~~<br>~~I~~|VGS= 0V<br>VDS= 50V|
|Crss<br>Reverse Transfer Capacitance<br>–––<br>16<br>–––|ƒ= 1.0MHz|
|**Diode Characteristics**||
|D<br>S<br>G<br>**Parameter**<br>**Min.**<br>**Typ. **<br>**Max.**<br>**Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>80<br>A<br>MOSFET symbol<br>(BodyDiode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>234<br>integral reverse<br>(BodyDiode) <br>p-njunction diode.<br>~~a~~<br>~~nD I (QO (OO~~<br>~~fe~~||
|VSD<br>Diode Forward Voltage<br>–––<br>0.8<br>1.3<br>V|TJ= 25°C,IS= 48A,VGS=0V|
|trr<br>Reverse RecoveryTime<br>–––<br>63<br>95<br>ns<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>126<br>190<br>nC<br>~~ns~~<br>~~I I~~<br>~~ps~~<br>~~tH~~|TJ= 25°C, IF= 48A, VDD= 50V<br>di/dt = 100A/µs|
|**Avalanche Characteristics**||
|**Parameter**<br>**Typ. **|**.**<br>**Max.**<br>**Units**|
|EAS<br>Single Pulse Avalanche Energy<br>–––|269<br>mJ|
|IAR<br>Avalanche Current<br>–––|48<br>A|
|**Thermal Resistance**||
|**Parameter**<br>**Typ. **|**.**<br>**Max.**<br>**Units**|
|RJC (Bottom)Junction-to-Case<br>–––|1.2|
|RJC (Top)<br>Junction-to-Case<br>–––|22<br>°C/W|
|RJA<br>Junction-to-Ambient<br>–––|35|
|RJA (<10s)<br>Junction-to-Ambient<br>–––|20|



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**----- Start of picture text -----**<br>
1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>7.0V 7.0V<br>6.5V 6.5V<br>6.0V 6.0V<br>100 5.5V 5.0V 100 5.5V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>4.5V<br>10 fy 10 Ve<br>4.5V<br> 60µs PULSE WIDTH  60µs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>1 1 ae<br>0.1 1 10 100 1000 0.1 1 10 wal 100 1000<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics  Fig 2.   Typical Output Characteristics<br>1000 2.0<br>ID = 48A<br>V GS  = 10V<br>100<br>MEE 1.5<br>10<br>naval TJ = 150°C<br>T J  = 25°C 1.0<br>1<br>Ltt AHIEE<br>VDS = 50V<br> 60µs PULSE WIDTH<br>0.1 VHS 0.5<br>1 2 3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics  Fig 4.   Normalized On-Resistance vs. Temperature<br>100000 14<br>VGS   = 0V,       f = 1 MHZ<br>10000 C CC iss rss  oss    = C  = C= C gs ds gd + C + C gdgd,  C ds SHORTED 12 ID= 48A VVVDS DS DS=== 50V 20V 80V<br>10<br>Ciss<br>Tod C oss |  OE 8<br>1000<br>S500 St] 6 ean<br>Crss<br>4<br>100<br>Ty de<br>2<br>CIPS ove<br>10 0<br>1 10 100 = 0 ERE 5 10 15 20 25 30 35 40<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>100<br>T J  = 150°C TJ = 25°C<br>10<br>1<br>V GS  = 0V<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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100 100µsec<br>1 ms ec<br>10 OPERATION IN<br>THIS AREA LIMITED<br>BY RDS(on)<br>10msec<br>1<br>Tc = 25°C DC<br>Tj = 150°C<br>Single Pulse<br>0.1<br>0.1 1 10 100<br>VDS, Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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100<br>90<br>——E<br>80<br>PTT<br>70<br>60<br>50 PEN<br>PE EN<br>4030 PE<br>20<br>i<br>ee<br>10<br>0 a ee eee<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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4.0 PERLE<br>3.5<br>ia a<br>3.0<br>FRESE<br>2.5 inns<br>ID = 100µA<br>2.0 ID = 250µA aA SY<br>ID = 1.0mA<br>1.5 I D  = 1.0A Py TY<br>EaGEn<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Threshold Voltage vs. Temperature 

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10<br>1 “TTT<br>D = 0.50 COO Oe eee<br>Ti |<br>0.20<br>4 ert 0.10<br>0.1<br>EE ee 0.05 Lala a —$———— | ||<br>0.02<br>HH| 0.01 eer I LE EH<br>0.01<br>etl SINGLE PULSE<br>0.001 er ( THERMAL RESPONSE ) MIE LTE TNT Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 anil a<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 125°C and<br>100 eG elel Tstart =25°C (Single Pulse)<br>et ee<br>PET mh |<br>10<br>Si miramses<br>Allowed avalanche Current vs avalanche<br>1 pulsewidth, tav, assuming j = 25°C and<br>Tstart = 125°C. Sy<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Typical Avalanche Current vs. Pulse Width 

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20 1200<br>18 Pitt | tt I D  = 48A 1100 TTT TT I D<br>TOP          3A<br>1000<br>16  5A<br>900 BOTTOM 48A<br>14<br>CAE 2 800 Seeeaoe<br>12 SAREE T J  = 125°C ASE<br>700<br>10 600<br>8 500<br>6 En 400 SNE<br>4 ee T J  = 25°C 300 PISSNEC ET<br>200<br>2 CEPT = Peps<br>100<br>0 (TET TTT to 0 ssh.—=<br>2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>)<br> <br>RDS(on),  Drain-to -Source On Resistance (m EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 13.** On–Resistance vs. Gate Voltage 

**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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**Fig 15.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>20V aeJL IAS<br>tp 0.01<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17a.** Switching Time Test Circuit 

**Fig 17b.** Switching Time Waveforms 

**Fig 18.** Gate Charge Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>Vgs<br>|<br>Vgs(th)<br>toot ' '<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 19.** Gate Charge Waveform 

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## **PQFN 5x6 Outline "B" Package Details** 

**PQFN 5x6 Outline "G" Package Details** 

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.infineon.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.infineon.com/technical info/appnotes/an 1154.pdf 

Note: For the most current drawing please refer to IR website at http://www.infineon.com/package/ 

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## **PQFN 5x6 Outline  Part Marking** 

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**----- Start of picture text -----**<br>
INTERNATIONAL<br>RECTIFIER LOGO<br>**----- End of picture text -----**<br>


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DATE CODE<br>XXXX P ART NUMBER<br>ASSEMBLY (“4 or 5 digits”)<br>SITE CODE XYWWX M ARKING CODE<br>(Per SCOP 200-002) (Per Marking Spec)<br>XXXXX<br>PIN 1 -@ \<br>IDENTIFIER<br>LOT CODE<br>(Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>**----- End of picture text -----**<br>


## **PQFN 5x6 Outline Tape and Reel** 

|||**REEL DIMENSIONS**|**REEL DIMENSIONS**|**REEL DIMENSIONS**|**REEL DIMENSIONS**||||||||||||||||||||**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|||||||||||||
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|||||||||||||||||CODE||||||||||||||||DESCRIPTION|||||||||||||||
|||||||||||||||||Ao|||||Dimension design to accommodate the component width||||||||||||||||||||||||||
|||||||||||||||||Bo|||||Dimension design to accommodate the component lenght||||||||||||||||||||||||||
|||||||||||||||||Ko|||||Dimension design to accommodate the component thickness||||||||||||||||||||||||||
|||||||||||||||||W|||||Overall width of the carrier ta||||||Overall width of the carrier ta||Overall width of the carrier ta|||Overall width of the carrier tape|||||||||||||||
|||||||||||||||||P1|||||Pitch between successive cavitycenters||||||||||||||||centers||||||||||
|||||||**QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE**|||||||||||||**QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE**|||||||||||||||**QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE**|||||||||||||
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|Note:  All dimension are nominal|||||||||||||||||||||||||||||||||||||||||||||||
||Package|||Reel||QTY|Reel||||||Ao|||||Bo|||||||||Ko|||||P1||||||W||||Pin 1|||||
||||Type|Diameter|||Width|||||(mm)||||||(mm)|||||||||(mm)|||||(mm)||||(mm)||||||Quadrant|||||
|||||(Inch)|||W1||||||||||||||||||||||||||||||||||||||||
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|5 X 6 PQFN||5 X 6 PQFN|||13|4000|12.4|||||6.300||||||5.300|||||||||1.20|||||8.00||||||12|||||Q1||||



Note: For the most current drawing please refer to IR website at http://www.infineon.com/package/ 

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**Qualifiction Information[† ]** 

|**Qualifiction Information[† ]**<br>~~——~~|~~1~~|~~1~~|
|---|---|---|
|**Qualification Level**<br>~~——~~|Industrial<br>(per JEDEC JESD47F††guidelines)<br>~~1~~||
|**Moisture Sensitivity Level**<br>~~——~~|PQFN 5mm x 6mm<br>~~1~~|MSL1<br>(per JEDEC J-STD-020D††)<br>~~1~~|
|**RoHS Compliant**<br>~~——~~|Yes<br>~~1~~||



†† Applicable version of JEDEC standard at the time of product release. 

## **Notes:** 

- Repetitive rating;  pulse width limited by max. junction temperature. 

- Starting TJ = 25°C, L = 0.23mH, RG = 50, IAS = 48A. 

- Pulse width  400µs; duty cycle  2%. 

-   R is measured at TJ of approximately 90°C. 

- When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details: - - 

- http://www.infineon.com/technical info/appnotes/an 994.pdf 

## **Revision History** 

|**Date**|**Comments**|
|---|---|
|01/24/2017|<br>Changed datasheet with Infineon logo - all pages<br><br>Updated package outline for “option B” and added package outline for “option G” on page 7.<br><br>Added disclaimer on last page|



9 2017-01-24 ~~ee~~ 

2017-01-24 

~~Cinfineon~~ 

## IRFH7191PbF ~~LLL~~ 

## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **IMPORTANT NOTICE** 

**Edition 2016-04-19** The information given in this document shall in no **Published by** event be regarded as a guarantee of conditions or **Infineon Technologies AG characteristics  (“Beschaffenheitsgarantie”) . 81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information **© 2016 Infineon Technologies AG.** regarding the application of the product, Infineon **All Rights Reserved.** Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. 

**Do you have a question about this document? Email:** erratum@infineon.com 

**Email:** erratum@infineon.com In addition, any information given in this document **is subject to customer’s compliance with its** obligations stated in this document and any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and **ifx1** any use of the product of Infineon Technologies in **customer’s applications.** 

The data contained in this document is exclusively intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, **Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

10 2017-01-24 ~~ee~~ 

2017-01-24 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFH7191TRPBF/power-mosfet-n-channel-100-v-80-a-00062-ohm-pqfn)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irfh7191trpbf/mosfet-n-ch-100v-80a-pqfn/dp/2725937)
---

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