# Power MOSFET, N Channel, 60 V, 100 A, 3200 µohm, QFN, Surface Mount

![Product image](https://novapart.co/image/farnell:2456714/)

**URL**: https://novapart.co/products/IRFH7085TRPBF/power-mosfet-n-channel-60-v-100-a-3200-ohm-qfn
**SKU**: IRFH7085TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6270
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | - |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | QFN |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 3200µohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2456714/)

## ~~Cinfineon~~ 

## Strong _IR_ FET™ IRFH7085PbF ~~po~~ 

HEXFET[® ] Power MOSFET 

## **Application** 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- DC/DC converters 

- DC/AC Inverters 

|**VDSS**<br>**RDS(on)typ.**|**VDSS**<br>**RDS(on)typ.**|**60V**<br>**2.6m**|
|---|---|---|
|**max**|**max**|**3.2m**|
|**ID**|**D**|**147A**|



## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free, RoHS Compliant 

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|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRFH7085PbF|PQFN 5mm x 6mm|Tape and Reel|4000|IRFH7085TRPbF|



**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

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## ~~Cinfineon.~~ 

## **Absolute Maximum Rating** 

|**Symbol**|**Parameter **||**Max.**|**Max.**|**x.**|**Units**|
|---|---|---|---|---|---|---|
|ID @TA= 25°C|Continuous Drain Current,VGS @10V|||23|||
|ID @TC(Bottom)= 25°C|Continuous Drain Current,VGS @10V|||147||A|
|ID @TC(Bottom)= 100°C Continuous Drain Current|= 100°C Continuous Drain Current,VGS @10V|||93|||
|IDM|Pulsed Drain Current|||588||A|
|PD @TC= 25°C|Maximum Power Dissipation|||156||W|
||Linear DeratingFactor||1.25|||W/°C|
|VGS|Gate-to-Source Voltage||± 20|± 20|± 20|V|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range||-55  to + 150|-55  to + 150||°C|
|**Avalanche Characteristics**|||||||
|**Symbol**|**Parameter**||**Max.**||**Max.**|**Units**|
|EAS(Thermallylimited)<br>EAS (Thermally limited)|Single Pulse Avalanche Energy<br>Single Pulse Avalanche Energy|||319<br>554||mJ|
|IAR<br>EAR|Avalanche Current <br>RepetitiveAvalancheEnergy |See Fig 15, 16, 23a, 23b|||See Fig 15, 16, 23a, 23b|A<br>mJ|
|**Thermal Resistance**|||||||
||**Parameter **|**Typ. **|**.**||**Max.**|**Units**|
|RJC (Bottom)|Junction-to-Case|0.5|||0.8||
|RJC (Top)<br>RJA|Junction-to-Case<br>Junction-to-Ambient|–––<br>–––|–––<br>–––||20<br>34|°C/W|
|RJA (<10s)|Junction-to-Ambient|–––|||22||



## **Avalanche Characteristics** 

## **Thermal Resistance** 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~GO~~|**Parameter**<br>~~GO~~|**Min.**<br>~~GO~~|**Typ.**<br>~~GO~~|**Max.**<br>~~GO~~|**Units**<br>~~GO~~|**Conditions**<br>~~GO~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~GO~~<br>~~ee~~|Drain-to-Source Breakdown Voltage<br>~~GO~~<br>~~ee~~|60<br>~~GO~~<br>~~ee~~|–––<br>~~GO~~<br>~~ee~~|–––<br>~~GO~~<br>~~ee~~|V<br>~~GO~~<br>~~ee~~|VGS= 0V, ID= 250µA<br>~~GO~~<br>~~ee~~|
|V(BR)DSS/TJ<br>~~ee~~<br>~~ee~~|JBreakdown Voltage Temp. Coefficient<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|43<br>~~ee~~<br>~~eee ee~~|–––<br>~~ee~~<br>~~ee~~|mV/°C<br>~~ee~~|Reference to 25°C, ID= 1.0mA<br>~~ee~~<br>~~eee~~|
|RDS(on)<br>~~ee~~|Static Drain-to-Source On-Resistance<br>~~ee~~|–––<br>~~ee~~|2.6<br>~~eee ee~~|3.2<br>~~ee~~|m|VGS= 10V, ID= 75A<br>~~eee~~|
|||–––<br>~~ee~~|3.6<br>~~eee ee~~|–––<br>~~ee~~||VGS= 6.0V, ID= 38A<br>~~eee~~|
|VGS(th)<br>~~ee~~<br>~~a~~|Gate Threshold Voltage<br>~~ee~~<br>~~GQ~~|2.1<br>~~ee ~~<br>~~GQ~~<br>~~es~~|–––<br> ~~eee ee~~<br>~~GQ~~<br>~~eee~~|3.7<br>~~ee~~<br>~~eee~~|V<br>~~OO~~<br>~~eee~~|VDS= VGS, ID= 150µA<br>~~eee~~<br>~~OO~~<br>~~eee~~|
|IDSS<br>~~a ee~~|Drain-to-Source Leakage Current<br>~~ee~~|–––<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~eee~~|1.0<br>~~ee~~<br>~~eee~~|µA<br>~~ee~~<br>~~eee~~|VDS= 60V, VGS= 0V<br>~~ee~~<br>~~eee~~|
|||–––<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~eee~~|150<br>~~ee~~<br>~~eee~~||VDS= 60V,VGS= 0V,TJ= 125°C<br>~~ee~~<br>~~eee~~|
|IGSS<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~ee~~|–––<br>~~es ~~<br>~~ee~~|–––<br> ~~eee~~<br>~~ee~~|100<br>~~eee~~<br>~~ee~~|nA<br>~~eee ~~<br>~~ee~~<br>~~(OO~~|VGS= 20V<br> ~~eee~~<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~<br>~~(OU~~|-100<br>~~ee~~||VGS= -20V<br>~~ee~~<br>~~(OO~~|
|RG<br>~~GD~~|Gate Resistance<br>~~GD~~|–––<br>~~GD~~|1.4<br>~~GD~~<br>~~(OU~~|–––<br>~~GD~~|<br>~~GD~~<br>~~(OO~~|~~GD~~<br>~~(OO~~|



-  Repetitive rating; pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 113µH, RG = 50, IAS = 75A, VGS = 10V. 

-  ISD  75A, di/dt  1280A/µs, VDD  V(BR)DSS, TJ  150°C. 

-  Pulse width  400µs; duty cycle  2%. 

-  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

-  R is measured at TJ approximately 90°C. 

-  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 33A, VGS =10V. 

-    When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details: 

- - http://www.irf.com/technical info/appnotes/an 994.pdf 

2 **Rev. 2.3** , 2020-04-16 ~~ee~~ 

IRFH7085PbF ~~a~~ 

## ~~Cinfineon~~ 

**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~a~~|~~rr~~|~~SD~~|~~ID I~~|~~I~~|||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~a~~<br>~~re~~|**Parameter**<br>~~rr~~<br>~~rs~~|**Min.**<br>~~SD~~<br>~~rr~~|**Typ. Max. Units**<br>~~ID I~~<br>~~rr~~|**. Max. Units**<br>~~I~~<br>~~rr~~|**. Max. Units**<br>~~rd~~|**. Max. Units**<br>**Conditions**|
|gfs<br>~~a~~<br>~~re~~<br>~~es~~<br>~~ee~~|Forward Transconductance<br>~~rr ~~<br>~~rs~~<br>~~es~~<br>|140<br> ~~SD ~~<br>~~rr~~<br>~~es~~<br>~~ee~~<br>|–––<br> ~~ID I~~<br>~~rr~~<br>~~es~~<br>|–––<br>~~I~~<br>~~rr~~<br>~~es~~<br>|S<br>~~rd~~|VDS= 10V, ID= 75A|
|Qg<br>~~re~~<br>~~es~~<br>~~ee~~|Total Gate Charge<br>~~rs ~~<br>~~es~~<br>|–––<br> ~~rr ~~<br>~~es~~<br>~~ee~~<br>|110<br> ~~rr ~~<br>~~es~~<br>|165<br> ~~rr~~<br>~~es~~<br>|nC<br>~~rd~~|ID= 75A<br>VDS= 30V<br>VGS= 10V|
|Qgs<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-to-Source Charge<br>~~es~~<br>~~**en**~~<br>|–––<br>~~es~~<br>~~ee~~<br>~~**en**~~<br>~~ss~~<br>|30<br>~~es~~<br>~~**en**~~<br>~~ss~~<br>|–––<br>~~es~~<br>~~**en**~~<br>|||
|Qgd<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-to-Drain Charge<br>~~**en**~~<br>|–––<br>~~ee~~<br>~~**en**~~<br>~~ss~~<br>|36<br>~~**en**~~<br>~~ss~~<br>|–––<br>~~**en**~~<br>|||
|Qsync<br><br>~~ee~~<br>~~ee~~<br>~~es~~|Total Gate Charge Sync.(Qg- Qgd)<br>~~**en**~~<br>~~es~~<br>|–––<br>~~**en**~~<br>~~ss~~<br>~~es~~<br>|74<br>~~**en**~~<br>~~ss~~<br>~~es~~<br>|–––<br>~~**en**~~<br>~~es~~<br>|||
|td(on)<br>~~ee~~<br>~~es~~<br>~~ee~~|Turn-On Delay Time<br>~~es~~<br>~~es~~|–––<br>~~ss~~<br>~~es~~<br>~~es~~|13<br>~~ss~~<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|ns|VDD= 30V<br>ID= 30A<br>RG= 2.7<br>VGS= 10V|
|tr<br><br>~~es~~<br>~~ee~~<br>~~ee~~|Rise Time<br>~~es~~<br>~~es~~<br>|–––<br>~~es~~<br>~~es~~<br>~~ee~~<br>|25<br>~~es~~<br>~~es~~<br>|–––<br>~~es~~<br>~~es~~<br>|||
|td(off)<br><br>~~ee~~<br>~~a ee~~<br>~~ee~~|Turn-Off Delay Time<br>~~es~~<br>~~ee~~<br>|–––<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|63<br>~~es~~<br>~~ee~~<br>|–––<br>~~es~~<br>~~ee~~<br>|||
|tf<br>~~a ee~~<br>~~ee~~<br>~~ee~~<br>~~a~~|Fall Time<br>~~ee~~<br>~~**e**n~~|–––<br>~~ee~~<br>~~ee~~<br>~~n~~<br>~~ee~~|23<br>~~ee~~<br>~~n~~<br>~~ee~~|–––<br>~~ee~~<br>~~n~~|||
|Ciss<br>~~ee~~<br>~~ee~~<br>~~a~~|Input Capacitance<br>~~**e**n~~<br>~~e~~|–––<br>~~ee~~<br>~~n~~<br>~~e~~<br>~~ee~~|6460<br>~~n~~<br>~~e~~<br>~~ee~~|–––<br>~~n~~<br>~~e~~|pF<br>~~rs~~|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz|
|Coss<br><br>~~ee~~<br>~~a~~<br>~~es~~|Output Capacitance<br>~~**e**n~~<br>~~e~~|–––<br>~~n~~<br>~~e~~<br>~~ee ~~<br>~~ee~~|560<br>~~n~~<br>~~e~~<br> ~~ee~~|–––<br>~~n~~<br>~~e~~|||
|Crss<br>~~a ee~~<br>~~es~~|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|380<br>~~ee~~|–––<br>~~ee~~|||
|Coss eff.(ER)<br>~~a ee~~<br>~~es~~<br>~~es~~|Effective Output Capacitance (Energy Related)<br>~~ee~~<br>~~Rs~~|–––<br>~~ee~~<br>~~ee~~<br>~~Rs~~<br>~~I~~|570<br>~~ee~~<br>~~Rs~~<br>~~nD~~|–––<br>~~ee~~<br>~~Rs~~<br>~~GO~~||VGS= 0V, VDS= 0V to 48V|
|Coss eff.(TR)<br>~~es~~<br>~~es~~|Output Capacitance (Time Related)<br>~~Rs~~|–––<br>~~ee~~<br>~~Rs~~<br>~~I~~|715<br>~~Rs~~<br>~~nD~~|–––<br>~~Rs~~<br>~~GO~~||VGS= 0V, VDS= 0V to 48V|
|**Diode Characteristics**<br>~~esRs~~<br>~~I~~<br>~~nD GO~~<br>~~rs~~<br>~~esRD~~<br>~~rs~~<br>~~rs~~|||||||
|**Symbol**<br>~~es~~<br>~~SSS~~|**Parameter**<br>~~R~~<br>~~SSS~~|**Min.**<br>~~RD~~<br>~~rs~~<br>~~SSS~~|**Typ. Max. Units**<br>~~D~~<br>~~rs~~<br>~~SSS~~|**. Max. Units**<br>~~D~~<br>~~SSS~~|**. Max. Units**<br>~~D~~<br>~~SSS~~|**. Max. Units**<br>**Conditions**<br>~~D~~<br>~~SSS~~|
|IS<br>~~es~~<br>~~SSS~~|Continuous Source Current<br>(BodyDiode)<br>~~R~~<br>~~SSS~~|–––<br>~~RD~~<br>~~rs~~<br>~~SSS~~|–––<br>~~D~~<br>~~rs~~<br>~~SSS~~|130<br>~~D~~<br>~~SSS~~|A<br>~~D~~<br>~~SSS~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>D<br>S<br>G<br>~~D~~<br>~~SSS~~<br>~~3~~|
|ISM<br>~~SSS~~<br>~~a~~<br>~~ee~~|Pulsed Source Current<br>(BodyDiode)<br>~~SSS~~<br>~~a~~<br>~~ts~~|–––<br>~~SSS~~<br>~~ttre~~|–––<br>~~SSS~~<br>~~tt~~|588<br>~~SSS~~<br>~~ts~~|||
|VSD<br>~~SSS~~<br>~~ee~~<br>~~es~~|Diode Forward Voltage<br>~~SSS~~<br>~~ts~~<br>~~ID~~|–––<br>~~SSS~~<br>~~ttre~~<br>~~GD~~|–––<br>~~SSS~~<br>~~tt~~<br>~~I~~|1.2<br>~~SSS~~<br>~~ts~~|V<br>~~SSS~~|TJ= 25°C,IS= 75A,VGS= 0V<br>~~SSS~~|
|dv/dt<br>~~ee~~<br>~~es~~|Peak Diode Recovery dv/dt<br>~~ts ~~<br>~~ID~~|–––<br> ~~ttre ~~<br>~~GD~~|3.0<br> ~~tt ~~<br>~~I~~|–––<br> ~~ts~~|V/ns T|V/ns TJ= 150°C,IS= 75A,VDS= 60V|
|trr<br>~~es~~<br>~~EE~~|Reverse Recovery Time<br>~~ID ~~<br>~~EEE~~<br>~~|~~|–––<br> ~~GD ~~<br>~~E~~|31<br> ~~I~~<br>~~E~~|–––<br>~~E~~|ns<br>~~E~~|TJ =25°CVDD= 51V<br>TJ =125°CIF= 75A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~E~~<br>~~|fT~~|30<br>~~E~~<br>~~fT~~|–––<br>~~E~~<br>~~fT~~|||
|Qrr<br>~~EE~~<br>~~Ce~~<br>~~a~~|Reverse Recovery Charge<br>~~EEE~~<br>~~|~~<br>~~Ce~~|–––<br>~~E~~<br>~~|fT~~<br>~~Ce~~|39<br>~~E~~<br>~~fT~~<br>~~Ce~~|–––<br>~~E~~<br>~~fT~~|nC<br>~~E~~||
|||–––<br>~~Ce~~<br>~~P|~~|33<br>~~Ce~~<br>~~P|UT~~|–––<br>~~UT~~|||
|IRRM<br>~~Ce~~<br>~~a~~|Reverse Recovery Current<br>~~Ce~~|–––<br>~~Ce~~<br>~~P|~~|1.9<br>~~Ce~~<br>~~P| UT~~|–––<br>~~UT~~|A||



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IRFH7085PbF ~~FO~~ 

## ~~Cinfineon~~ 

**Fig 3.** Typical Output Characteristics 

**Fig 5.** Typical Transfer Characteristics 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 4.** Typical Output Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

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## ~~Cinfineon~~ 

**Fig 9.** Typical Source-Drain Diode Forward Voltage 

**Fig 10.** Maximum Safe Operating Area 

**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

**Fig 13.** Typical On-Resistance vs. Drain Current 

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**==> picture [65 x 34] intentionally omitted <==**

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Cinfineon<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

## **Fig 15.** Typical Avalanche Current vs. Pulse Width 

**Notes on Repetitive Avalanche Curves , Figures 15, 16:** 

**(For further info, see AN-1005 at www.irf.com)** 

1. Avalanche failures assumption: 

- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 22a, 22b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 16). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

- Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 

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## IRFH7085PbF ~~FO~~ 

**Fig 17.** Threshold Voltage vs. Temperature 

**Fig 18.** Typical Recovery Current vs. dif/dt 

**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

**Fig 21.** Typical Stored Charge vs. dif/dt 

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IRFH7085PbF 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VD S L D R IVE R<br>R G D .U .T +<br>- [V][D D]<br>IA S<br>20V<br>tp 0.01 <br>**----- End of picture text -----**<br>


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I A S<br>**----- End of picture text -----**<br>


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V (B R )D S S<br>tp — ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

**Fig 24b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>|<br>Vgs(th)<br>Q gs1 Q gs2 Q gd Q godr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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IRFH7085PbF 

**PQFN 5x6 Outline "B" Package Details** 

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf 

For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.irf.com/technical info/appnotes/an 1154.pdf 

## **PQFN 5x6 Part Marking** 

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INTERNATIONAL<br>RECTIFIER LOGO<br>**----- End of picture text -----**<br>


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DATE CODE<br>XXXX P ART NUMBER<br>ASSEMBLY (“4 or 5 digits”)<br>SITE CODE XYWWX M ARKING CODE<br>(Per SCOP 200-002) (Per Marking Spec)<br>XXXXX<br>PIN 1<br>IDENTIFIER<br>| LOT CODE<br>(Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **PQFN 5x6 Tape and Reel** 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

10 

**Rev. 2.3** , 2020-04-16 

|<br>**Qualification Information**<br>~~Cinfineon~~|IRFH7085PbF<br>~~a~~|
|---|---|
|**Qualification level**<br>Industrial<br>(per JEDEC JESD47F†guidelines )<br>**Moisture Sensitivity Level**<br>PQFN 5mm x 6mm<br>MSL1<br>(per JEDEC J-STD-020D†)<br>**RoHS Compliant**<br>Yes<br>~~—~~||
|†<br>Applicable version of JEDEC standard at the time of product release.||



## **Revision History** 

|**Date**|**Rev.**|**Comments**|
|---|---|---|
|11/7/2014|2.1|<br>Added EAS (L =1mH)= 554mJ  on page 2<br><br>Added note 9  “Limited by TJmax, starting TJ= 25°C, L = 1mH, RG= 50, IAS= 33A, VGS=10V” on  page 2<br><br>Added  Pd @  Tc = 25°C on Absolute Max Rating table on page 2|
|3/17/2015|2.2|<br>Updated package outline and tape and reel on pages 9 and 10.|
|4/16/2020|2.3|<br>Updated datasheet based on IFX template.<br><br>Updated Datasheet based on new current rating and application note :App-<br>AN_1912_PL51_2001_180356|



11 **Rev. 2.3** , 2020-04-16 ~~ee~~ 

**Rev. 2.3** , 2020-04-16 

Cinfineon 

IRFH7085PbF 

## **Trademarks of Infineon Technologies AG** 

- GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

Edition 2016-04-19 **IMPORTANT NOTICE** For further information on the product, technology, **Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or delivery terms and conditions and prices please contact your nearest Infineon Technologies ofice **Infineon Technologies AG** www.infineon.com 81726 Munich, Germany With respect to any examples, hints or any typical values stated herein and/or any information Please note that this product is not qualified © 2016 Infineon Technologies AG. regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **WARNINGS document?** Due to technical requirements products may **Email:** erratum@infineon.com In addition, any information given in this contain dangerous substances. For information on document **is subject to customer’s compliance** the types in question please contact your nearest **with its** obligations stated in this document and Infineon Technologies ofice. any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and Except as otherwise explicitly approved by Infineon ifx1 any use of the product of Infineon Technologies in Technologies in a written document signed by **customer’s applications.** authorized representatives of Infineon Technologies, **Infineon Technologies’ products** The data contained in this document is exclusively **may** not be used in any applications where a intended for technically trained staf. It is the **responsibility of customer’s technical** failure of the product or any consequences of the use thereof can reasonably be expected to result in **departments** to evaluate the suitability of the personal injury. product for the intended application and the completeness of the product information given in this document with respect to such application. 

12 

**Rev. 2.3** , 2020-04-16 



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---

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