# Power MOSFET, N Channel, 40 V, 100 A, 1250 µohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:2456716/)

**URL**: https://novapart.co/products/IRFH7084TRPBF/power-mosfet-n-channel-40-v-100-a-1250-ohm-pqfn
**SKU**: IRFH7084TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5110
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):950µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.9V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | - |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PQFN |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 1250µohm |
| Gate Source Threshold Voltage Max | 3.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2456716/)

Strong _IR_ FET™ IRFH7084PbF ~~pe~~ 

## ~~Cinfineon~~ 

## **Application** 

## HEXFET[® ] Power MOSFET 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- DC/DC converters 

- DC/AC Inverters 

|**VDSS**|**40V**|
|---|---|
|**RDS(on) typ.**|**0.95m**|
|**max**|**1.25m**|
|**ID (Silicon Limited)**|**265A**|
|**ID (Package Limited)**|**100A**|



## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free, RoHS Compliant 

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PQFN 5X6 mm<br>**----- End of picture text -----**<br>


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Standard Pack<br>Base part number  Package Type  Orderable Part Number<br>Form  Quantity<br>IRFH7084PbF   PQFN 5mm x 6mm   Tape and Reel  4000  IRFH7084TRPbF<br>6 300<br>ID = 100A<br>5<br>Tot 240 ~~ Limited by package<br>4<br>180<br>3<br>120<br>2 T J  = 125°C<br>RET<br>1 PCPREEHE 60 TN,<br>TJ = 25°C<br>0<br>4 PP LCP 8 12 16 20 0 rT TSN TSN<br>25 50 75 100 125 150<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain Current (A)<br>)<br><br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


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300<br>240 ~~ Limited by package<br>180<br>120<br>60 TN,<br>0 rT TSN TSN<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

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~~Cinfin eon~~ 

IRFH7084PbF ~~a~~ 

## **Absolute Maximium Rating** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID @TA= 25°C|Continuous Drain Current,VGS @10V|40|A|
|ID @TC(Bottom)= 25°C|Continuous Drain Current,VGS @10V|265||
|ID @TC(Bottom)= 100°C|Continuous Drain Current,VGS @10V|170||
|ID @TC= 25°C|Continuous Drain Current,VGS @10V(Package Limited)|100||
|IDM|Pulsed Drain Current|400|A|
||Linear DeratingFactor|1.25|W/°C|
|PD @TC= 25°C|Max Power Dissipation|156||
|VGS|Gate-to-Source Voltage|± 20|V|
|TJ<br>TSTG|Operating Junction and<br>StorageTemperatureRange|-55  to + 150|°C|



|EAS (Thermally limited)|Single Pulse Avalanche Energy|185|mJ|
|---|---|---|---|
|EAS (Thermally limited)|Single Pulse Avalanche Energy|431||
|IAR|Avalanche Current|See Fig 14, 15, 23a,|A|
|EAR|Repetitive Avalanche Energy||mJ|



## **Thermal Resistance** 

|**Thermal Resistance**|||||
|---|---|---|---|---|
||**Parameter**|**Typ.**|**Max.**|**Units**|
|RJC(Bottom)|Junction-to-Case|0.5|0.8|°C/W|
|RJC (Top)|Junction-to-Case|–––|21||
|RJA|Junction-to-Ambient|–––|35||
|RJA (<10s)|Junction-to-Ambient|–––|20||



|**Symbol**<br>~~—_~~|**Parameter**<br>~~—_~~|**Min.**<br>|**Typ. Max. Units**<br>|**Typ. Max. Units**<br>|**Typ. Max. Units**<br>|**Typ. Max. Units**<br>**Conditions**<br>|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~—_~~<br>~~en~~|Drain-to-Source Breakdown Voltage<br>~~—_~~<br>|40<br><br>~~ee~~<br>|–––<br><br>~~ee~~<br>|–––<br><br>~~oe~~<br>|V<br><br>|VGS= 0V,ID= 250µA<br><br>|
|V(BR)DSS/TJ<br>~~—_ee~~<br>~~en~~|JBreakdown Voltage Temp. Coefficient<br>~~—_ee~~<br>|––– 0.034 –––<br>~~ee~~<br>~~ee~~<br>|––– 0.034 –––<br>~~ee~~<br>~~ee~~<br>|––– 0.034 –––<br>~~ee~~<br>~~oe~~<br>|V/°C Reference to 25°C<br>~~ee~~<br>|V/°C Reference to 25°C,ID= 1mA<br>~~ee~~<br>|
|RDS(on)<br>~~ee~~<br>~~en~~|Static Drain-to-Source On-Resistance<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>|0.95  1.25<br>~~ee~~<br>~~ee~~<br>|0.95  1.25<br>~~ee~~<br>~~oe~~<br>|m<br>~~ee~~<br>|VGS= 10V,ID= 100A<br>~~ee~~<br>|
|VGS(th)<br>~~ee~~<br>~~en~~|GateThresholdVoltage<br>~~ee~~<br>|2.2<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>|3.9<br>~~ee~~<br>~~oe~~<br>|V<br>~~ee~~<br>|VDS= VGS,ID= 150µA<br>~~ee~~<br>|
|GS(th)<br>IDSS<br>~~en~~|Drain-to-Source Leakage Current<br>|–––<br>~~ee~~<br>|–––<br>~~ee~~<br>|1.0<br>~~oe~~<br>|µA<br>|VDS=40V,VGS=0V<br>|
|||–––<br>~~ee~~<br>|–––<br>~~ee~~<br>|150<br>~~oe~~<br>||VDS=40V,VGS=0V,TJ=125°C<br>|
|IGSS<br>~~en~~|Gate-to-Source Forward Leakage<br>|–––<br>~~ee~~<br>|–––<br>~~ee ~~<br>|100<br> ~~oe~~<br>|nA<br>|VGS= 20V<br>|
||Gate-to-SourceReverseLeakage<br>|–––<br>|–––<br>|-100<br>||VGS= -20V<br>|
|RG<br>~~Pf~~|Gate Resistance<br>~~Pf~~|–––<br>~~Pf~~|1.4<br>~~Pf~~|–––<br>~~Pf~~|<br>~~Pf~~|~~Pf~~|



-   Limited by TJmax, starting TJ = 25°C, L = 0.037mH, RG = 50, IAS = 100A, VGS =10V. 

- ISD  100A, di/dt  994A/µs, VDD  V(BR)DSS, TJ 150°C. 

- Pulse width  400µs; duty cycle  2%. 

-  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

-  R is measured at TJ approximately 90°C. 

-    Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 29A, VGS =10V. 

-    When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details: 

- - http://www.infineon.com/technical info/appnotes/an 994.pdf 

2 2017-01-24 ~~re~~ 

~~Cinfineon~~ 

IRFH7084PbF ~~_~~ 

## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~ee~~|~~rr~~|~~ts ns~~|~~ns~~|~~I~~|~~ns~~||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~ee~~<br>~~a~~|**Parameter**<br>~~rr~~<br>~~er~~|**Min.**<br>~~ts ns~~<br>~~SD ts~~|**Typ. Max. Units**<br>~~ns~~<br>~~ts~~|**. Max. Units**<br>~~I~~<br>~~UI~~|**. Max. Units**<br>~~ns~~<br>~~ns~~|**. Max. Units**<br>**Conditions**|
|gfs<br>~~ee~~<br>~~a~~|Forward Transconductance<br>~~rr ~~<br>~~er~~|120<br> ~~ts ns~~<br>~~SD ts~~|–––<br>~~ns ~~<br>~~ts~~|–––<br> ~~I~~<br>~~UI~~|S<br>~~ns~~<br>~~ns~~|VDS= 10V,ID=100A|
|Qg<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~er~~|–––<br>~~SD ts~~|127<br>~~ts ~~|190<br> ~~UI~~|nC<br>~~ns~~|ID= 100A<br>VDS= 20V<br>VGS= 10V|
|Qgs<br>~~a~~<br>~~ee~~<br>~~es~~|Gate-to-Source Charge<br>~~ee~~<br>|–––<br>~~ee~~<br>~~es~~<br>|35<br>~~ee~~<br>~~es~~<br>|–––<br>~~ee~~<br>|||
|Qgd<br>~~ee~~<br>~~es~~|Gate-to-Drain Charge<br>~~ee~~<br>|–––<br>~~ee~~<br>~~es~~<br>|41<br>~~ee~~<br>~~es~~<br>|–––<br>~~ee~~<br>|||
|Qsync<br>~~ee~~<br>~~es~~<br>~~es~~|Total Gate Charge Sync.(Qg–Qgd)<br>~~ee~~<br>~~ne~~|–––<br>~~ee~~<br>~~es~~<br>~~ne~~|195<br>~~ee~~<br>~~es~~<br>~~ne~~|–––<br>~~ee~~<br>~~ne~~|||
|td(on)<br>~~es~~<br>~~es~~|Turn-On DelayTime<br>~~ne~~|–––<br>~~es ~~<br>~~ne~~|16<br> ~~es~~<br>~~ne~~|–––<br>~~ne~~|ns|VDD= 20V<br>ID= 30A<br>RG= 2.7<br>VGS= 10V|
|tr<br><br>~~es~~<br>~~ee~~<br>~~ee~~|Rise Time<br>~~ne~~<br>~~en~~<br>|–––<br>~~ne~~<br>~~en~~<br>|31<br>~~ne~~<br>~~en~~<br>~~es~~<br>|–––<br>~~ne~~<br>~~en~~<br>|||
|td(off)<br>~~ee~~<br>~~ee~~|Turn-Off DelayTime<br>~~en~~<br>|–––<br>~~en~~<br>|64<br>~~en~~<br>~~es~~<br>|–––<br>~~en~~<br>|||
|tf<br>~~ee~~<br>~~ee~~|Fall Time<br>~~en~~<br>~~es~~|–––<br>~~en~~<br>~~es~~|34<br>~~en~~<br>~~es~~<br>~~es~~|–––<br>~~en~~<br>~~es~~|||
|Ciss<br>~~ee~~|Input Capacitance<br>~~es~~|–––<br>~~es~~|6560<br>~~es~~<br>~~es~~|–––<br>~~es~~|pF<br>~~Grrrrs~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.5<br>~~ee~~|
|Coss<br>~~ee~~<br>~~a~~|Output Capacitance<br>~~en~~<br>|–––<br>~~en~~<br>|940<br>~~en~~<br>~~es~~<br>|–––<br>~~en~~<br>|||
|Crss<br>~~ee~~<br>~~a~~<br>~~es~~|Reverse Transfer Capacitance<br>~~en~~<br><br>|–––<br>~~en~~<br><br>~~ee~~<br>|650<br>~~en~~<br>~~es~~<br><br>|–––<br>~~en~~<br><br>|||
|Coss eff.(ER)<br>~~ee~~<br>~~a ee~~<br>~~es~~|Effective Output Capacitance (Energy Related)<br>~~en~~<br>~~ee~~<br>|–––<br>~~en~~<br>~~ee~~<br>~~ee~~<br><br>~~I~~|1120<br>~~en~~<br>~~es~~<br>~~ee~~<br><br>~~(OR~~|–––<br>~~en~~<br>~~ee~~<br><br>~~(~~||VGS= 0V, VDS = 0V to 32V<br>See Fig.11<br>~~ee~~|
|Coss eff.(TR)<br>~~es~~|Output Capacitance(Time Related)<br>~~ns~~|–––<br>~~ee~~<br>~~ns~~<br>~~I~~|1300<br>~~ns~~<br>~~(OR~~|–––<br>~~ns~~<br>~~(~~||VGS= 0V,VDS = 0V to 32V<br>~~ee~~|
|**Diode Characteristics**<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~I (OR (~~<br>~~Grrrrs~~<br>~~eenD~~<br>~~I(RDOO~~|||||||
|**Symbol**<br>~~ee~~|**Parameter **<br>~~n~~|**Min.**<br>~~nD~~<br>~~I~~|**Typ. M**<br>~~D~~<br>~~(RD~~|**. Max.**<br>~~D~~<br>~~OO~~|**Units**<br>~~D~~|**Conditions**<br>~~D~~|
|IS<br>~~ee~~<br>~~$f~~|Continuous Source Current<br>(Body Diode)<br>~~n~~<br>~~$f~~|–––<br>~~nD~~<br>~~I ~~<br>~~$f fps~~|––– 100<br>~~D~~<br> ~~(RD ~~<br>~~fps~~|––– 100<br>~~D~~<br> ~~OO~~<br>~~fps~~|A<br>~~D~~<br>~~fps~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.<br>D<br>S<br>G<br>~~D~~<br>~~fps~~<br>~~S~~|
|ISM<br>~~$f~~<br>~~ee~~|(Body Diode)<br>Pulsed Source Current<br>(BodyDiode)<br>~~$f~~<br>~~ee~~|–––<br>~~$f fps~~|–––<br>~~fps~~|400<br>~~fps~~|||
|VSD<br>~~oe~~<br>~~ee~~<br>~~a~~|Diode Forward Voltage<br>~~oe~~<br>~~(Os~~<br>|–––<br>~~oe~~<br>~~Os~~<br>|–––<br>~~oe~~<br>~~Os~~<br>|1.3<br>~~oe~~<br>~~Os~~<br>~~(OR~~<br>|V<br>~~oe~~<br>~~Os~~<br>|TJ= 25°C,IS= 100A,VGS= 0V<br>~~oe~~<br>~~Os~~|
|dv/dt<br>~~oe~~<br>~~ee~~<br>~~a~~|Peak Diode Recoverydv/dt<br>~~oe~~<br>~~(Os~~<br>|–––<br>~~oe~~<br>~~Os~~<br>|4.5<br>~~oe~~<br>~~Os~~<br>|–––<br>~~oe~~<br>~~Os~~<br>~~(OR~~<br>|V/ns T<br>~~oe~~<br>~~Os~~<br>|V/ns TJ= 150°C,IS=100A,VDS= 40V<br>~~oe~~<br>~~Os~~|
|trr<br>~~ee~~<br>~~a e~~|Reverse Recovery Time<br>~~(Os~~<br>~~ee~~<br>~~|~~|–––<br>~~Os~~<br>~~e~~|36<br>~~Os~~<br>~~e~~|–––<br>~~Os~~<br>~~(OR~~<br>~~e~~|ns<br>~~Os~~<br>~~e~~|TJ =25°CVDD= 34V<br>TJ =125°CIF= 100A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C <br>~~Os~~|
|||–––<br>~~e~~<br>~~|fT~~|37<br>~~e~~<br>~~fT~~|–––<br>~~(OR~~<br>~~e~~<br>~~fT~~|||
|Qrr<br>~~a e~~<br>~~a ee~~<br>~~Re~~|Reverse Recovery Charge<br>~~ee~~<br>~~|~~<br>~~ee~~<br>|–––<br>~~e~~<br>~~|fT~~<br>~~ee~~|38<br>~~e~~<br>~~fT~~<br>~~ee~~|–––<br>~~(OR~~<br>~~e~~<br>~~fT~~<br>~~ee~~|nC<br>~~e~~<br>~~ee~~<br>||
|||–––<br>~~ee~~<br>~~Ff~~<br>|40<br>~~ee~~<br>~~Ff~~<br>~~|~~<br>|–––<br>~~ee~~<br>~~Ff~~<br>~~|~~<br>|||
|IRRM<br>~~a ee~~<br>~~Re~~|Reverse Recovery Current<br>~~ee~~<br>~~ID~~|–––<br>~~ee~~<br>~~Ff~~<br>~~ID~~|1.7<br>~~ee~~<br>~~Ff~~<br>~~|~~<br>~~ID~~|–––<br>~~ee~~<br>~~Ff~~<br>~~|~~<br>~~ID~~|A<br>~~ee~~<br>~~ID~~||



3 ~~ee~~ 

2017-01-24 

~~Cinfin eon~~ 

IRFH7084PbF ~~T~~ 

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10000 10000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>1000 7.0V 7.0V<br>6.0V 1000 6.0V<br>nh 5.0V TTL 5.0V<br>4.5V 4.5V<br>4.3V 4.3V<br>100 BOTTOM 4.0V BOTTOM 4.0V<br>Ae a a<br>100<br>10<br>10 4.0V<br>1<br>4.0V  60µs PULSE WIDTH  60µs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>0.1 cotiti LL 1 =iTl ill |<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>Fig 3.   Typical Output Characteristics<br>10000 1.8<br>ID = 100A<br>1.6 VGS = 10V TLLLLE<br>1000<br>1.4<br>100<br>TJ = 150°C<br>1.2<br>10<br>TJ = 25°C 1.0<br>1 A / |<br>VDS = 10V 0.8<br> 60µs PULSE WIDTH<br>0.1 tlSS 0.6 A27TELEcnn<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 14<br>VCGS  iss   = C = 0V,       f = 1 MHZgs + Cgd,  Cds SHORTED 12 ID= 100A<br>Crss   = Cgd  VDS= 3 2 V<br>—t C oss   = C ds  + C gd 10 FAY VDS= 2 0 V<br>10000<br>Lo Ciss 8 er<br>6<br>Coss<br>0 Al ae<br>1000 Crss 4<br>= 2 Pf {|<br>0<br>- J<br>100<br>0 40 80 120 160<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

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## ~~Cinfin eon~~ 

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10000<br>1000<br>PTT<br>TJ = 150°C<br>100<br>Hy TJ = 25°C<br>ff 10<br>1<br>fp<br>VGS = 0V<br>0.1 SSS aS<br>0.0 0.4 0.8 1.2 1.6 2.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

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1000<br>100µsec<br>100<br>1msec<br>Limited by<br>Package<br>10<br>OPERATION IN THIS AREA  10msec<br>LIMITED BY RDS(on)<br>1<br>Tc = 25°C<br>Tj = 150°C DC<br>Single Pulse<br>0.1 ieSS<br>0.1 1 10<br>VDS,  Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Maximum Safe Operating Area 

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49 0.9<br>Id = 1.0mA<br>48 0.8<br>47 epee 0.7 a ee eee<br>SHEE ERE7 0.6 a—+-+ee4+4<br>46<br>CCA 0.5 oY<br>45<br>0.4<br>44 PEL LEME ELL PY<br>EEBZERe 0.3 P| CU<br>43<br>0.2<br>42<br>0.1<br>41<br>7TeH TEEPE = 0.0 ||ee<br>40<br>0 10 20 30 40<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>VDS, Drain-to-Source Voltage (V)<br>TJ , Temperature ( °C )<br>Energy (µJ)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to–Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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2.0<br>1.8 | | |ler<br>VGS = 6.0V<br>1.6 VGS = 7.0V<br>VGS = 10V<br>1.4 atval VGS = 15V<br>1.2<br>oT<br>1.0<br>Pt<br>0.8 Sane<br>0.6 folfo ft<br>0 40 80 120 160 200<br>ID, Drain Current (A)<br>)<br><br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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2017-01-24 

~~Gafineon~~ 

IRFH7084PbF ~~_a~~ 

**==> picture [443 x 443] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>D = 0.50 TL nnat<br>0.20<br>Cee<br>0.1<br>0.10<br>| ||<br>0.05<br>0.02<br>0.01<br>0.01 = rade<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>AL<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 125°C and<br>Tstart =25°C (Single Pulse)<br>100<br>= 611 ota<br>an SHIT<br>10<br>1 Allowed avalanche Current vs avalanche<br>Pe ZU aeSima<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 125°C.<br>(cc! TEE<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Avalanche Current vs. Pulse width 

**==> picture [469 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>180 BOTTOM   1.0% Duty Cycle (For further info, see AN-1005 at www.infineon.com)<br>160 INL I D  = 100A 1.Avalanche failures assumption:<br>SH Purely a thermal phenomenon and failure occurs at a<br>140 temperature far in excess of Tjmaxjmax. This is validated for every<br>part type.<br>120 INNEE EE tL 2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not<br>PIN    exceeded.<br>100<br>80 PTINNN [EEL] L 3. Equation below based on circuit and waveforms shown in Figures      22a, 22b.     22a, 22b.<br>4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>60 PTTININ--E tL 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br> increase during avalanche).<br>40 PE tTTANIAEt LL 6. Iav = Allowable avalanche current.<br>20 aaeeeNaNI 7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax<br>0 EERaN     (assumed as 25°C in Figure 14, 15).  tav = Average time in avalanche.<br>25 50 75 100 125 150 D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13)<br>Starting TJ , Junction Temperature (°C) T/ ZT/ ZthJC<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmaxjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures      22a, 22b.     22a, 22b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZT/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

- EAS (AR) = PD (ave)·tav 

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## ~~Cinfineon~~ 

**==> picture [475 x 451] intentionally omitted <==**

**----- Start of picture text -----**<br>
4.5 12<br>IF = 60A<br>4.0 tery yy 10 V R = 34V ||<br>TJ = 25°C<br>3.5 APRA 8 T J = 125°C |<br>3.0 _| PRN UE| 6 [EasA<br>ID = 150µA<br>2.5 I D  = 1.0mA<br>4<br>ID = 1.0A<br>2.0 RA |<br>ToS 2 ean<br>EEE GAC<br>1.5<br>0 TT TT<br>-75 -50 -25 0 25 50 75 100 125 150<br>0 200 400 600 800 1000<br>TJ , Temperature ( °C )<br>diF /dt (A/µs)<br>Fig 17.   Threshold Voltage vs. Temperature  Fig 18.   Typical Recovery Current vs. dif/dt<br>12 240<br>IF = 60A<br>IF = 100A<br>10 VR = 34V | | | 200 VR = 34V ee<br>TJ = 25°C<br>TJ = 25°C<br>8 T J  = 125°C 160 T J  = 125°C<br>SaY | _ 120 GELY<br>6<br>42 |e | | 8040 |||<br>xe| [|] 0 ey| ||<br>0 | ft P|| ft<br>0 200 400 600 800 1000<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>diF /dt (A/µs)<br>IRRM (A)<br>VGS(th) Gate threshold Voltage (V)<br>IRRM (A) QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

**==> picture [216 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
240<br>IF = 100A<br>|<br>200 VR = 34V<br>TJ = 25°C<br>160 T J  = 125°C ley<br>120<br>AZ<br>80<br>vem<br>ay<br>40<br>| |<br>P|<br>0 | |<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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IRFH7084PbF 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

**==> picture [157 x 90] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>aeJL tp Y 0.01 |<br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**==> picture [182 x 106] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

**Fig 24b.** Switching Time Waveforms 

**==> picture [172 x 117] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds '<br>Vgs<br>|<br>Vgs(th)<br>><br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

8 

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~~Cinfineon~~ 

IRFH7084PbF ~~Oy~~ 

## **PQFN 5x6 Outline "B" Package Details** 

## **PQFN 5x6 Outline "G" Package Details** 

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.infineon.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.infineon.com/technical info/appnotes/an 1154.pdf 

Note: For the most current drawing please refer to IR website at http://www.infineon.com/package/ 

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## **PQFN 5x6 Part Marking** 

**==> picture [295 x 192] intentionally omitted <==**

**----- Start of picture text -----**<br>
INTERNATIONAL<br>RECTIFIER LOGO<br>\<br>DATE CODE I caR<br>XXXX P ART NUMBER<br>ASSEMBLY (“4 or 5 digits”)<br>SITE CODE XYWWX M ARKING CODE<br>(Per SCOP 200-002) (Per Marking Spec)<br>XXXXX<br>PIN 1 -®@ \<br>IDENTIFIER<br>LOT CODE<br>(Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>**----- End of picture text -----**<br>


## **PQFN 5x6 Tape and Reel** 

|||**REEL DIMENSIONS**|**REEL DIMENSIONS**|**REEL DIMENSIONS**|**REEL DIMENSIONS**|||||||||||||||||||**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|**TAPE DIMENSIONS**|||||||||||||
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||||||||||||||||CODE|||||||||||||||||||DESCRIPTION|||||||||||||||
||||||||||||||||Ao|||||Dimension design to accommodate the component width|||||||||||||||||||||||||||||
||||||||||||||||Bo|||||Dimension design to accommodate the component lenght|||||||||||||||||||||||||||||
||||||||||||||||Ko|||||Dimension design to accommodate the component thickness|||||||||||||||||||||||||||||
||||||||||||||||W|||||Overall width of the carrier ta||||||Overall width of the carrier ta||||Overall width of the carrier ta|Overall width of the carrier ta|||Overall width of the carrier tape|||||||||||||||
||||||||||||||||P1|||||Pitch between successive cavitycenters|||||||||||||||||||centers||||||||||
|||||||**QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE**||||||||||||**QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE**||||||||||||||||||**QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE**|||||||||||||
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|Note:  All dimension are nominal|||||||||||||||||||||||||||||||||||||||||||||||||
||Package|||Reel||QTY|Reel|||||Ao|||||Bo|||||||||Ko||||||||P1||||||W||||Pin 1|||||
||||Type|Diameter|||Width||||(mm)||||||(mm)|||||||||(mm)||||||||(mm)||||(mm)||||||Quadrant|||||
|||||(Inch)|||W1||||||||||||||||||||||||||||||||||||||||||
||||||||(mm)||||||||||||||||||||||||||||||||||||||||||
|5 X 6 PQFN||5 X 6 PQFN|||13|4000|12.4||||6.300||||||5.300|||||||||1.20||||||||8.00||||||12|||||Q1||||



Note: For the most current drawing please refer to IR website at http://www.infineon.com/package/ 

10 

2017-01-24 

|<br>IRFH7084PbF<br>**Qualification information**†<br>infineon~~_T~~|<br>IRFH7084PbF<br>**Qualification information**†<br>infineon~~_T~~|<br>IRFH7084PbF<br>**Qualification information**†<br>infineon~~_T~~|<br>IRFH7084PbF<br>**Qualification information**†<br>infineon~~_T~~|<br>IRFH7084PbF<br>**Qualification information**†<br>infineon~~_T~~|
|---|---|---|---|---|
|||||Industrial††|
||Qualification level||(per JEDEC JESD47F|(per JEDEC JESD47F††guidelines )|
|||||MSL1|
||Moisture Sensitivity Level|PQFN 5mmx 6mm|PQFN 5mmx 6mm|(per JEDEC J-STD-020D††)|
||RoHS compliant|||Yes|



- † Qualification standards can be found at International Rectifier’s web site: http://www.infineon.com/product info/reliability/ 

†† Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Revision Historyy**||
|---|---|
|**Date**|**Comments**|
|10/16/2014|<br>Add Pd at tc=25C  on Absolute Max Rating table on page 2|
|03/05/2015|Updated EAS (L =1mH)= 431mJ  on page 2<br>Updated note 8  “Limited byTJmax,startingTJ= 25°C,L = 1mH,RG= 50,IAS= 29A,VGS=10V” onpage 2|
|03/19/2015|<br>Updated package outline on page 9.|
|01/24/2017|<br>Changed datasheet with Infineon logo - all pages<br><br>Added package outline for “option G” on page 9.<br><br>Added disclaimer on last page|



11 2017-01-24 ~~ee~~ 

~~Cinfineon~~ 

IRFH7084PbF ~~a~~ 

## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **IMPORTANT NOTICE** 

**Edition 2016-04-19** The information given in this document shall in no **Published by** event be regarded as a guarantee of conditions or **Infineon Technologies AG characteristics  (“Beschaffenheitsgarantie”) . 81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information **© 2016 Infineon Technologies AG.** regarding the application of the product, Infineon **All Rights Reserved.** Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **document? Email:** erratum@infineon.com In addition, any information given in this document **is subject to customer’s compliance with its** obligations stated in this document and any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and **ifx1** any use of the product of Infineon Technologies in **customer’s applications.** The data contained in this document is exclusively intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, **Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

12 2017-01-24 ~~ee~~ 

2017-01-24 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFH7084TRPBF/power-mosfet-n-channel-40-v-100-a-1250-ohm-pqfn)
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- [Supplier page](https://es.farnell.com/infineon/irfh7084trpbf/mosfet-n-ch-40v-100a-pqfn-8/dp/2456716)
---

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