# Power MOSFET, N Channel, 30 V, 79 A, 4500 µohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:2725936/)

**URL**: https://novapart.co/products/IRFH5304TRPBF/power-mosfet-n-channel-30-v-79-a-4500-ohm-pqfn
**SKU**: IRFH5304TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3220
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 46W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PQFN |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 79A |
| Drain Source On State Resistance | 4500µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725936/)

|Strong_IR_FET™<br>IRFH5304PbF<br>~~Ginn~~|Strong_IR_FET™<br>IRFH5304PbF<br>~~Ginn~~|Strong_IR_FET™<br>IRFH5304PbF<br>~~Ginn~~|Strong_IR_FET™<br>IRFH5304PbF<br>~~Ginn~~|Strong_IR_FET™<br>IRFH5304PbF<br>~~Ginn~~|Strong_IR_FET™<br>IRFH5304PbF<br>~~Ginn~~|Strong_IR_FET™<br>IRFH5304PbF<br>~~Ginn~~|Strong_IR_FET™<br>IRFH5304PbF<br>~~Ginn~~|Strong_IR_FET™<br>IRFH5304PbF<br>~~Ginn~~|Strong_IR_FET™<br>IRFH5304PbF<br>~~Ginn~~|
|---|---|---|---|---|---|---|---|---|---|
||**VDSS**<br>**RDS(on) max**<br>**(@ VGS=10V)**<br>**Qg (typical)**|**30**<br>**4.5**<br>**16**|**V**<br>**m**<br>**nC**||mal|||2||
||**ID**<br>**(@Tc(Bottom) = 25°C)**|**79**|**A**|||||||
|||||||||PQFN 5 x 6 mm||



## **Applications** 

-  Control MOSFET for Buck Converters 

## **Features and Benefits** 

## **Features** 

## **Benefits** 

|Lowcharge (typical 16nC)||LowerConduction Losses|
|---|---|---|
|Low Thermal ResistancetoPCB(<2.7°C/W)||IncreasedPower Density|
|100%RgTested||IncreasedReliability|
|Low Profile (≤0.9mm)|results in|IncreasedPower Density|
|Industry-StandardPinout||Multi-VendorCompatibility|
|Compatiblewith Existing SurfaceMount Techniques||Easier Manufacturing|
|RoHS Compliant,Halogen-Free||EnvironmentallyFriendlier|
|MSL1, Industrial Qualification||Increased Reliability|



|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRFH5304PbF|PQFN 5 mm x 6 mm|Tape and Reel|4000|IRFH5304TRPbF|



## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage|30|V|
|VGS|Gate-to-Source Voltage|± 20||
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|22|A|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V|17||
|ID@ Tc(Bottom)= 25°C|Continuous Drain Current, VGS@ 10V|79||
|ID@ Tc(Bottom)= 100°C|Continuous Drain Current, VGS@ 10V|50||
|IDM|Pulsed Drain Current|320||
|PD@TA= 25°C|Power Dissipation|3.6|W|
|PD@Tc(Bottom)= 25°C|Power Dissipation|46||
||Linear Derating Factor|0.029|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|



Notes  through  are on page 8 

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**Static @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min.**<br>**Typ. **<br>**Max.**<br>**Units**<br>**Conditions**<br>BVDSS<br>Drain-to-Source Breakdown Voltage<br>30<br>–––<br>–––<br>V<br>VGS= 0V,ID=  250µA<br>BVDSS/TJBreakdown Voltage Temp. Coefficient<br>–––<br>0.02<br>–––<br>V/°C Reference to 25°C, ID= 1.0mA<br>~~ee~~<br>~~(RD(RS (ORIN (OO~~<br>~~ee~~|
|---|
|RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>3.8<br>4.5<br>m VGS= 10V, ID= 47A|
|–––<br>5.8<br>6.8<br>VGS= 4.5V,ID= 47A<br>VGS(th)<br>Gate Threshold Voltage<br>1.35<br>1.8<br>2.35<br>V<br>VDS= VGS, ID= 50µA<br>VGS(th)<br>Gate Threshold Voltage Coefficient<br>–––<br>-6.6<br>–––<br>mV/°C<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>5.0<br>µAVDS= 24V,VGS= 0V<br>–––<br>–––<br>150<br>VDS= 24V,VGS= 0V,TJ= 125°C<br>~~—————~~<br>~~se ee~~<br>~~——————————~~|
|IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20 V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20 V<br>gfs<br>Forward Transconductance<br>88<br>–––<br>–––<br>S<br>VDS= 15 V,ID= 47A<br>~~SE~~|
|Qg<br>Total Gate Charge<br>–––<br>41<br>–––<br>VGS= 10V,VDS= 15V,ID= 49A|
|Qg<br>Total Gate Charge<br>–––<br>16<br>56<br>VDS= 15V<br>Qgs1<br>Pre-Vth Gate-to-Source Charge<br>–––<br>3.6<br>–––<br>ID= 47A<br>Qgs2<br>Post-Vth Gate-to-Source Charge<br>–––<br>2.7<br>–––<br>nC<br>VGS= 4.5V<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>5.8<br>–––<br>See Fig.17 & 18<br>Qgodr<br>Gate Charge Overdrive<br>–––<br>3.9<br>–––<br>Qsw<br>Switch Charge(Qgs2+ Qgd)<br>–––<br>8.5<br>–––<br>Qoss<br>Output Charge<br>–––<br>9.8<br>–––<br>nC<br>VDS= 16V,VGS= 0V<br>RG<br>Gate Resistance<br>–––<br>1.2<br>–––<br><br>td(on)<br>Turn-On DelayTime<br>–––<br>13<br>–––<br>VDD= 15V, VGS= 4.5V<br>tr<br>Rise Time<br>–––<br>25<br>–––<br>ns<br>ID= 47A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>12<br>–––<br>RG= 1.8<br>tf<br>Fall Time<br>–––<br>6.6<br>–––<br>See Fig.15<br>Ciss<br>Input Capacitance<br>–––<br>2360<br>–––<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>510<br>–––<br>pF<br>VDS= 10V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>220<br>–––<br>ƒ= 1.0MHz<br>~~eee~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~esee~~<br>~~a~~<br>~~i~~<br>~~nn~~|
|**Avalanche Characteristics**|
|**Parameter**<br>**Typ. **<br>**Max.**<br>**Units**<br>EAS<br>Single Pulse Avalanche Energy <br>–––<br>46<br>mJ<br>IAR<br>Avalanche Current<br>47<br>A<br>~~es~~|
|**Diode Characteristics**|
|D<br>S<br>G<br>**Parameter**<br>**Min.**<br>**Typ. **<br>**Max.**<br>**Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>46<br>A<br>MOSFET symbol<br>(BodyDiode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>320<br>integral reverse<br>(BodyDiode)<br>p-njunction diode.<br>~~a~~<br>~~I (RR~~<br>~~(ID OR~~<br>~~I(~~<br>~~rr~~<br>~~ae~~|
|VSD<br>Diode Forward Voltage<br>–––<br>0.71<br>–––<br>TJ= 25°C,IS=5A,VGS=0V<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.0<br>V<br>TJ= 25°C,IS=47A,VGS=0V<br>~~a~~|
|trr<br>Reverse RecoveryTime<br>–––<br>19<br>29<br>ns<br>TJ= 25°C, IF= 47A, VDD= 15V<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>44<br>66<br>nC<br>di/dt = 300A/µs<br>ton<br>Forward Turn-On Time<br>Time is dominated by parasitic Inductance<br>~~rs~~|
|**Thermal Resistance**|
|**Parameter**<br>**Typ. **<br>**Max.**<br>**Units**|
|RJC (Bottom)<br>Junction-to-Mounting Base<br>–––<br>2.7|
|RJC (Top)<br>Junction-to-Case<br>–––<br>15<br>°C/W|
|RJA<br>Junction-to-Ambient<br>–––<br>35|
|RJA (<10s)<br>Junction-to-Ambient<br>–––<br>22|



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## IRFH5304PbF ~~po~~ 

**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Drain-to-Source Breakdown Voltage 

**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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**Fig 12.** On-Resistance vs. Gate Voltage 

**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

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**PQFN 5x6 Outline "B" Package Details** 

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.irf.com/technical info/appnotes/an 1154.pdf 

## **PQFN 5x6 Part Marking** 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **PQFN 5x6 Tape and Reel** 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **Qualification Information** 

|**Qualification Information **|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F†guidelines)||
|**Moisture Sensitivity Level**|PQFN 5mm x 6mm|MSL1<br>(per JEDEC J-STD-020D†)|
|**RoHS Compliant**|Yes||



- Applicable version of JEDEC standard at the time of product release. 

## **Notes:** 

 Repetitive rating; pulse width limited by max.  Starting T J = 25°C, L=0.041mH, R G =50 , IAS  Pulse width  400us; duty cycle  2%.  R is measured at T J of approximately 90°C.  When mounted on 1 inch square 2 oz copper  

## **Revision History** 

|**Date**|**Rev.**|**Comments**|
|---|---|---|
|5/14/2014|2.1|<br>Updated ordering information to reflect the End-of-Life (EOL) of the mini-reel option (EOL notice #259)<br><br>Update Package outline on page 7<br><br>Updated data sheet based on IR corporate template.|
|03/19/2015|2.2|Updated package outline and tape and reel on pages 7 and 8|
|03/19/2021|2.3|<br>Updated datasheet based on IFX template.<br><br>Updated Datasheet based on new current rating and application note :App-<br>AN_1912_PL51_2001_180356|



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IRFH5304PbF 

## **Trademarks of Infineon Technologies AG** 

- 

GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **IMPORTANT NOTICE** 

The information given in this document shall in no **Published by** event be regarded as a guarantee of conditions or **Infineon Technologies AG** 

With respect to any examples, hints or any typical values stated herein and/or any information © 2016 Infineon Technologies AG. regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **document? Email:** erratum@infineon.com In addition, any information given in this document **is subject to customer’s compliance with its** obligations stated in this document and any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and ifx1 any use of the product of Infineon Technologies in **customer’s applications.** 

The data contained in this document is exclusively intended for technically trained staf. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies ofice www.infineon.com 

Please note that this product is not qualified 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies ofice. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, **Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

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