# Power MOSFET, N Channel, 30 V, 100 A, 2100 µohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:2725935/)

**URL**: https://novapart.co/products/IRFH5302TRPBF/power-mosfet-n-channel-30-v-100-a-2100-ohm-pqfn
**SKU**: IRFH5302TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3780
**Stock**: 1000+
**Lead Time**: 358 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 100W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PQFN |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 2100µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725935/)

## ~~Cinfineon~~ 

## _IR_ MOSFET™ IRFH5302PbF ~~pe~~ 

|**VDSS**|**30**|**V**|
|---|---|---|
|**RDS(on)max**<br>(@ VGS= 10V)|**2.1**|**m**|
|**Qg (typical)**|**29**|**nC**|
|**Rg (typical)**|**1.6**|**Ω**|
|**ID**<br>**(@TC (Bottom) = 25°C)**|**175**|**A**|



**==> picture [72 x 9] intentionally omitted <==**

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PQFN 5X6 mm<br>**----- End of picture text -----**<br>


## **Applications** 

-  OR-ing MOSFET for 12V (typical) Bus in-Rush Current 

-  Synchronous MOSFET for buck converters 

-  Battery Operated DC Motor Inverter MOSFET 

## **Features** 

## **Benefits** 

|Low RDSon(< 2.1 mΩ)||LowerConduction Losses|
|---|---|---|
|Low Thermal Resistance toPCB(< 1.2°C/W)||Enable better Thermal Dissipation|
|100% Rg tested||Increased Reliability|
|Low Profile (<0.9mm)||IncreasedPower Density|
|Industry-StandardPinout|results in|Multi-VendorCompatibility|
|Compatiblewith Existing SurfaceMountTechniques||Easier Manufacturing|
|RoHS Compliant Containing no Lead, no Bromide and no Halogen||Environmentally Friendlier|
|MSL1, Industrial Qualification||Increased Reliability|



|**Orderable Part Number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Note**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRFH5302TRPbF<br>~~a~~<br>~~_~~|PQFN 5mm x 6mm|Tape and Reel|4000||
|~~IRFH5302TR2PbF~~<br>~~_~~|~~PQFN 5mm x 6mm~~|~~Tape and Reel~~|~~400~~|EOL notice #259|



## **Absolute Maximum Ratings** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage|30|V|
|VGS|Gate-to-Source Voltage|± 20|V|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|32|A|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V|26||
|ID@ TC(Bottom)= 25°C|Continuous Drain Current, VGS@ 10V|175||
|ID@ TC(Bottom)= 100°C|Continuous Drain Current, VGS@ 10V|111||
|IDM|Pulsed Drain Current|700||
|PD@TA= 25°C|Power Dissipation|3.6|W|
|PD@TC(Bottom)= 25°C|Power Dissipation|104||
||Linear Derating Factor|0.029|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|



Notes  through  are on page 9 

1 **Rev. 2.3** , 2021-03-03 ~~ee~~ 

~~Cinfineon~~ 

IRFH5302PbF ~~P|~~ 

|**Static@ TJ = 25°C(unless otherwise specified)**|
|---|
|**Parameter**<br>**Min.**<br>**Typ. **<br>**Max.**<br>**Units**<br>**Conditions**<br>BVDSS<br>Drain-to-Source Breakdown Voltage<br>30<br>–––<br>–––<br>V<br>VGS= 0V,ID= 250µA<br>BVDSS/TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.02<br>–––<br>V/°C Reference to 25°C, ID= 1.0mA<br>~~a~~<br>~~a~~<br>~~(S(O~~<br>~~ID (OO (OO~~|
|RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>1.8<br>2.1<br>m<br>VGS= 10V, ID= 50A<br>–––<br>2.8<br>3.5<br>VGS= 4.5V,ID= 50A<br>VGS(th)<br>Gate Threshold Voltage<br>1.35<br>1.8<br>2.35<br>V<br>VDS= VGS, ID= 100µA<br>VGS(th)<br>Gate Threshold Voltage Coefficient<br>–––<br>-6.8<br>–––<br>mV/°C<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>5.0<br>µAVDS= 24V,VGS= 0V<br>–––<br>–––<br>150<br>VDS= 24V,VGS= 0V,TJ= 125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>gfs<br>Forward Transconductance<br>180<br>–––<br>–––<br>S<br>VDS= 15V,ID= 50A<br>Qg<br>Total Gate Charge<br>–––<br>76<br>–––<br>nC<br>VGS= 10V,VDS= 15V,ID= 50A<br>~~ee~~<br>~~ee ee ee~~<br>~~oO~~<br>~~———~~<br>~~a~~|
|Qg<br>Total Gate Charge<br>–––<br>29<br>41<br>nC<br>Qgs1<br>Pre-Vth Gate-to-Source Charge<br>–––<br>7.7<br>–––<br>VDS= 15V<br>Qgs2<br>Post-Vth Gate-to-Source Charge<br>–––<br>4.4<br>–––<br>VGS= 4.5V<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>9.7<br>–––<br>ID= 50A<br>Qgodr<br>Gate Charge Overdrive<br>–––<br>8.2<br>–––<br>See Fig. 17a & 17b<br>Qsw<br>Switch Charge(Qgs2+ Qgd)<br>–––<br>14<br>–––<br>Qoss<br>Output Charge<br>–––<br>19<br>–––<br>nC<br>VDS= 16V,VGS= 0V<br>RG<br>Gate Resistance<br>–––<br>1.6<br>2.5<br><br>~~a~~<br>~~—_~~<br>~~———————————~~<br>~~a~~|
|td(on)<br>Turn-On DelayTime<br>–––<br>18<br>–––<br>ns<br>VDD= 15V, VGS= 4.5V<br>tr<br>Rise Time<br>–––<br>51<br>–––<br>ID= 50A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>22<br>–––<br>RG=1.8<br>tf<br>Fall Time<br>–––<br>18<br>–––<br>See Fig. 15<br>Ciss<br>Input Capacitance<br>–––<br>4400<br>–––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>890<br>–––<br>VDS= 15V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>360<br>–––<br> ƒ= 1.0MHz<br>~~esSee |~~<br>~~——————————~~<br>~~a~~<br>~~ne~~|
|**Avalanche Characteristics**|
|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**|
|EAS<br>SinglePulseAvalancheEnergy <br>–––<br>130<br>mJ|
|IAR<br>Avalanche Current<br>–––<br>50<br>A|
|**Diode Characteristics**|
|D<br>S<br>G<br>**Parameter **<br>**Min. Typ. Max.Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>104<br>A<br>MOSFET symbol<br>(BodyDiode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>700<br>integral reverse<br>(BodyDiode) <br>p-njunctiondiode.<br>VSD<br>DiodeForwardVoltage<br>–––<br>–––<br>1.0<br>V<br>TJ= 25°C,IS=50A,VGS=0V<br>~~a~~<br>~~I GD(UD(RD (US(OO~~<br>~~er~~<br>~~Ss~~<br>~~af~~|
|trr<br>ReverseRecoveryTime<br>–––<br>20<br>30<br>nsTJ= 25°C, IF= 50A, VDD= 15V<br>Qrr<br>ReverseRecovery Charge<br>–––<br>32<br>48<br>nC di/dt=300A/µs<br>~~ee~~|
|**Thermal Resistance**|
|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**|
|RJC (Bottom) Junction-to-Case<br>–––<br>1.2|
|°C/W<br>RJC (Top)<br>Junction-to-Case<br>–––<br>15<br>RJA<br>Junction-to-Ambient<br>–––<br>35|
|RJA (<10s)<br>Junction-to-Ambient<br>–––<br>22|



2 **Rev. 2.3** , 2021-03-03 ~~EE~~ 

IRFH5302PbF 

**Fig 1.** Typical Output Characteristics 

**Fig 3.** Typical Transfer Characteristics 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 2.** Typical Output Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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**Rev. 2.3** , 2021-03-03 

IRFH5302PbF ~~pe~~ 

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**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

**Fig 9.** Maximum Drain Current vs. Case (Bottom) Temperature 

**Fig 10.** Threshold Voltage vs. Temperature 

**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 

4 

**Rev. 2.3** , 2021-03-03 

~~Cinfineon~~ 

IRFH5302PbF ~~pe~~ 

**Fig 12.** On-Resistance vs. Gate Voltage 

**Fig 14a.** Unclamped Inductive Test Circuit 

**Fig 15a.** Switching Time Test Circuit 

**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

**Fig 14b.** Unclamped Inductive Waveforms 

**Fig 15b.** Switching Time Waveforms 

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~~Cinfineon~~ 

IRFH5302PbF 

**Fig 16.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

**Fig 17a.** Gate Charge Test Circuit 

**Fig 17b.** Gate Charge Waveform 

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**Rev. 2.3** , 2021-03-03 

~~Cinfineon~~ 

IRFH5302PbF ~~po~~ 

**PQFN 5x6 Outline "B" Package Details** 

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.irf.com/technical info/appnotes/an 1154.pdf 

## **PQFN 5x6 Part Marking** 

Note: For the most current drawing please refer to  website at http://www.irf.com/packaging 

7 

**Rev. 2.3** , 2021-03-03 

~~Cinfi~~ 

IRFH5302PbF ~~a~~ 

## **PQFN 5x6 Tape and Reel** 

Note: For the most current drawing please refer to  website at http://www.irf.com/packaging 

8 

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IRFH5302PbF ~~P|~~ 

IRFH5302PbF ~~Cinfineon P|~~ **Qualification Information** Industrial **Qualification level** (per JEDEC JESD47F[ †] guidelines ) MSL1 **Moisture Sensitivity Level** PQFN 5mm x 6mm (per JEDEC J-STD-020D[†)] Yes **RoHS Compliant** ~~—~~ † Applicable version of JEDEC standard at the time of product release. 

## **Notes:** 

- Repetitive rating; pulse width limited by max. junction temperature. 

- Starting TJ = 25°C, L = 0.103mH, RG = 25, IAS = 50A. 

- Pulse width  400µs; duty cycle  2%. 

-  R is measured at TJ of approximately 90°C. 

- When mounted on 1 inch square  2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf 

-  Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 9. De-rating will be required based on the actual environmental conditions. 

## **Revision History** 

|**Date**|**Rev.**|**Comments**|
|---|---|---|
|03/10/2014|2.1|<br>Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259).<br><br>Updated data sheet with the new IR corporate template.|
|03/19/2015|2.2|<br>Updated package outline and tape and reel on pages 7 and 8.|
|03/03/2021|2.3|<br>Updated datasheet based on IFX template.<br><br>Updated Datasheet based on new current rating and application note :<br>App-AN_1912_PL51_2001_180356<br><br>Removed “HEXFET®Power MOSFET” added “IR MOSFETTM “-page1|



9 **Rev. 2.3** , 2021-03-03 ~~ee~~ 

Cnfineon 

IRFH5302PbF 

## **Trademarks of Infineon Technologies AG** 

- GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

Edition 2016-04-16 **IMPORTANT NOTICE** For further information on the product, technology, **Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or delivery terms and conditions and prices please contact your nearest Infineon Technologies ofice **Infineon Technologies AG** www.infineon.com 81726 Munich, Germany With respect to any examples, hints or any typical values stated herein and/or any information Please note that this product is not qualified © 2016 Infineon Technologies AG. regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **WARNINGS document?** Due to technical requirements products may **Email:** erratum@infineon.com In addition, any information given in this contain dangerous substances. For information on document **is subject to customer’s compliance** the types in question please contact your nearest **with its** obligations stated in this document and Infineon Technologies ofice. any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and Except as otherwise explicitly approved by Infineon ifxl any use of the product of Infineon Technologies in Technologies in a written document signed by **customer’s applications.** authorized representatives of Infineon Technologies, **Infineon Technologies’ products** The data contained in this document is exclusively **may** not be used in any applications where a intended for technically trained staf. It is the **responsibility of customer’s technical** failure of the product or any consequences of the use thereof can reasonably be expected to result in **departments** to evaluate the suitability of the personal injury. product for the intended application and the completeness of the product information given in this document with respect to such application. 

10 

**Rev. 2.3** , 2021-03-03 



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