# Power MOSFET, N Channel, 30 V, 100 A, 1850 µohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:2580009/)

**URL**: https://novapart.co/products/IRFH5301TRPBF/power-mosfet-n-channel-30-v-100-a-1850-ohm-pqfn
**SKU**: IRFH5301TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4360
**Stock**: 1000+
**Lead Time**: 358 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00155ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PQFN |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 1850µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2580009/)

HEXFET ® Power MOSFET 

|International<br>~~T&R Rectitier~~|||
|---|---|---|
|**VDS**|**30**|**V**|
|**RDS(on) max**<br>(@VGS= 10V)|**1.85**|**m**Ω|
|**Qg (typical)**|**37**|**nC**|
|**RG (typical)**<br>~~Poe]~~|**1.5**<br>~~Poe]~~|Ω<br>~~Poe]~~|
|**ID **<br>(@Tc(Bottom)= 25°C)<br>~~Poe]~~|**100**<br>~~Poe]~~|**A**<br>~~Poe]~~|



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PQFN 5X6 mm<br>**----- End of picture text -----**<br>


## **Applications** 

- OR-ing MOSFET for 12V (typical) Bus in-Rush Current 

- Synchronous MOSFET for Buck Converters 

- Battery Operated DC Motor Inverter MOSFET 

## **Features and Benefits** 

## **Features** 

## **Benefits** 

Low RDSon (<1.85m Ω ) Lower Conduction Losses Low Thermal Resistance to PCB (<1.1°C/W) Increased Power Density 100% Rg tested Increased Reliability Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout ⇒ Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability 

|**Orderable part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Note**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRFH5301TRPbF<br>~~CG~~|PQFN 5mm x 6mm<br>~~CG~~|Tape and Reel<br>~~CG~~|**Quantity**<br>4000<br>~~CG~~|~~CG~~|
|~~IRFH5301TR2PbF~~|~~PQFN 5mm x 6mm~~|Tape and Reel<br>~~Tape and Reel~~|~~400~~|EOL notice # 259|



## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**<br>**Parameter**<br>~~Ce~~<br>~~es~~|**Max.**<br>~~Ce~~<br>~~(~~|**Units**<br>~~Ce~~|
|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~es~~|30<br>~~(~~|V|
|VGS|Gate-to-Source Voltage<br>~~es~~<br>~~a~~<br>~~es~~|± 20<br>~~(~~<br>~~a~~<br>~~(~~||
|ID@ TA= 25°C|Continuous Drain Current,VGS@ 10V<br>~~a~~<br>~~es~~|35<br>~~a~~<br>~~(~~|A|
|ID@ TA= 70°C|Continuous Drain Current,VGS@ 10V<br>~~es~~<br>~~|~~|28<br>~~(~~<br>~~|~~||
|ID@ TC(Bottom)= 25°C<br>~~ek~~|Continuous Drain Current,VGS@ 10V<br>~~©~~<br>~~ek~~|100<br>~~©~~<br>~~(©~~||
|ID@ TC(Bottom)= 100°C<br>~~ek~~|Continuous Drain Current,VGS@ 10V<br>~~es~~<br>~~ek~~|100<br>~~es~~<br>~~(©~~||
|IDM<br>~~ek~~<br>~~Pl~~|Pulsed Drain Current<br>~~ek©~~<br>~~PlOe~~|400<br>~~(©~~||
|PD@TA= 25°C<br>~~ek~~<br>~~Pl~~<br>~~>~~|Power Dissipation<br>~~ek©~~<br>~~PlOe~~<br>~~>~~|3.6<br>~~(©~~|W|
|PD@TC(Bottom)= 25°C<br><br>~~Pl~~<br>~~>~~<br>~~>~~|Power Dissipation<br>~~©~~<br>~~PlOe~~<br>~~>~~<br>~~(~~<br>~~>~~|110<br>~~(~~||
|~~>~~<br>~~>~~|Linear DeratingFactor<br>~~>~~<br>~~>~~<br>~~(~~|0.029<br>~~(~~|W/°C<br>~~(~~|
|TJ<br>TSTG<br>~~>~~|Operating Junction and<br>Storage Temperature Range<br>~~>~~|-55  to + 150|°C|



Notes 0) through  are on page 9 © 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|**Conditions**|
|---|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage|30|–––|–––|V|VGS= 0V,ID= 250μA||
|ΔΒVDSS/ΔTJ|Breakdown Voltage Temp. Coefficient|–––|0.02|–––|V/°C|Reference to 25°C,ID= 1mA||
|RDS(on)|Static Drain-to-Source On-Resistance|–––|1.55|1.85|mΩ|VGS= 10V,ID= 50A�||
|||–––|2.4|2.9||VGS= 4.5V,ID= 50A�||
|VGS(th)|Gate Threshold Voltage|1.35|1.80|2.35|V|VDS= VGS, ID= 100μA||
|ΔVGS(th)|Gate Threshold Voltage Coefficient|–––|-6.9|–––|mV/°C|||
|IDSS|Drain-to-Source Leakage Current|–––|–––|5.0|μA|VDS= 24V,VGS= 0V||
|||–––|–––|150||VDS= 24V,VGS= 0V,TJ= 125°C||
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 20V||
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -20V||
|gfs|Forward Transconductance|218|–––|–––|S|VDS= 15V,ID= 50A||
|Qg|Total Gate Charge|–––|77|–––|nC|VGS= 10V,VDS= 15V,ID= 50A||
|Qg|Total Gate Charge|–––|37|56|nC|See Fig.6,17 & 18<br>VDS= 15V<br>ID= 50A<br>VGS= 4.5V||
|Qgs1|Pre-Vth Gate-to-Source Charge|–––|9.8|–––||||
|Qgs2|Post-Vth Gate-to-Source Charge|–––|5|–––||||
|Qgd|Gate-to-Drain Charge|–––|12|–––||||
|Qgodr|Gate Charge Overdrive|–––|10|–––||||
|Qsw|Switch Charge(Qgs2+ Qgd)|–––|17|–––||||
|Qoss|Output Charge|–––|22|–––|nC|VDS= 16V,VGS= 0V||
|RG|Gate Resistance|–––|1.5|2.3|Ω|||
|td(on)|Turn-On DelayTime|–––|21|–––|ns|See Fig.15<br>RG=1.0Ω<br>ID= 15A<br>VDD= 15V, VGS= 4.5V||
|tr|Rise Time|–––|78|–––||||
|td(off)|Turn-Off DelayTime|–––|22|–––||||
|tf|Fall Time|–––|23|–––||||
|Ciss|Input Capacitance|–––|5114|–––|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 15V||
|Coss|Output Capacitance|–––|1017|–––||||
|Crss|Reverse Transfer Capacitance|–––|406|–––||||
|**Avalanche Characteristics**||||||||
||**Parameter**||**Typ.**|||**Max.**|**Units**|
|EAS|Single Pulse Avalanche Energy�||–––|||150|mJ|
|IAR|Avalanche Current�||–––|||50|A|
|**Diode Characteristics**||||||||
||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**||
|IS|Continuous Source Current<br>(Body Diode)|–––|–––|100|A|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.||
|ISM|Pulsed Source Current<br>(Body Diode)��|–––|–––|400||||
|VSD|<br>Diode Forward Voltage|–––|–––|1.0|V|TJ= 25°C,IS= 50A,VGS= 0V�||
|trr|Reverse RecoveryTime|–––|24|36|ns|TJ= 25°C, IF= 50A, VDD= 15V<br>di/dt = 300A/μs��||
|Qrr|Reverse RecoveryCharge|–––|53|80|nC|||
|ton|Forward Turn-On Time|Time is dominated by parasitic Inductance||||||



## **Thermal Resistance** 

|**Thermal Resistance**|||||
|---|---|---|---|---|
||**Parameter**|**Typ.**|**Max.**|**Units**|
|RθJC (Bottom)|Junction-to-Case�|–––|1.1|°C/W|
|RθJC (Top)|Junction-to-Case�|–––|15||
|RθJA|Junction-to-Ambient�|–––|35||
|RθJA (<10s)|Junction-to-Ambient�|–––|22||



� ��������������������������������������������� ������������������������� ������������������������������������������ 

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1000<br>VGS<br>TOP           10V<br>7ghE ane 4.50V |<br>4.00V<br>100 3.50V<br>3.25V<br>3.00V<br>2.75V<br>10 IC BOTTOM 2.50V |<br>SSS SSS eel<br>Ht<br>aaiiiemaiiemmariiil<br>1<br>2.5V<br>ES ae<br>≤ 60μs PULSE WIDTH<br>0.1 aiiill Tj = 25°C al<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>ee ee ee ee 2 ee eee<br>100<br>a TJ = 150°C  4A<br>10<br>po | “fi | | |<br>T = 25 ° C<br>J<br>1<br>ae<br>VDS = 15V<br>ihePTETii ≤ 60μs PULSE WIDTH<br>0.1 EE<br>1.5 2 2.5 3 3.5 4 4.5 5<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>| Ciss   = C gs + Cgd,  C ds SHORTED<br>| | C rss    = C gd<br>Coss   = Cds + Cgd<br>=<br>10000 oor oo<br>C<br>rr | | [T iss on EE<br>eea eeee C el<br>oss<br>1000 I  ee<br>———<br>SS Crss ee<br>| TT Se ee ee<br>eee<br>100<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs.Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           10V<br>eeeA es 4.50V4.00V<br>3.50V<br>3.25V<br>100 3.00V 2.75V<br>BOTTOM 2.50V<br>Yr |<br>AT<br>10 ba _ 2.5V ill<br>Aelll<br>LL ≤ 60μs PULSE WIDTH<br>1 lll Tj = 150°C  alll<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>1.8<br>ID = 50A<br>1.6 VGS = 10V L<br>1.4<br>LL ELLE.<br>1.2<br>va<br>1.0<br>0.8 ELLE<br>0.6 FLEE EL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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14<br>12 ID= 50A VVDSDS= 24V= 15V | P<br>10 | | SV<br>y,<br>8 Y/<br>6<br>P| | f | |<br>4 |<br>Al |.<br>Y<br>20 pty)Yi/ | | [|| fl<br>0 20 40 60 80 100<br> QG,  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge Vs.Gate-to-Source Voltage 

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1000<br>Se<br>100 ee TJ = 150°C<br>———<br>ff<br>10 —— = TJ = 25 {_— °C<br>a<br>1<br>V GS  = 0V<br>0.1 | fi fy |<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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200<br>Limited By Package<br>160 aera<br>"a<br>/ .,<br>120 fv |<br>eee<br>80<br>40<br>0<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current Vs. Case (Bottom) Temperature 

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10000<br>OPERATION IN THIS AREA LIMITED<br>ESS BY R DS (on)<br>1000<br>ety et<br>7 atie et een Pt<br>1 00μs ec<br>100 nhee eee Bll<br>Ea ee eee<br>10 PS 1msec<br>1 Tc = 25°C 10msec<br>Tj = 150°C<br>0.1 Single Pulse ee<br>0.10 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>3.02.5 LE ELE<br>pope | tt tt<br>Pt | TRL LL<br>2.0 ASS ZEA<br>aN: Saab<br>1.5<br>ID = 1.0A<br>1.0 ID = 1.0mA VA _|_ |Ss<br>ID = 250μA<br>ID = 100μA<br>0.5<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Threshold Voltage Vs. Temperature 

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**----- Start of picture text -----**<br>
10<br>Ee ee ee ee ee Oe Oe Oe ee es Qe Oe Oe Oe Qe Qs OO OO OS QQ OOO<br>PTT ET<br>1 rr ee ee<br>D = 0.50<br>0.20<br>0.10<br>0.1 FREErrES HE HH<br>0.05<br>a I<br>po 0.02 Coe ee tt<br>0.01<br>0.01 Se seer HE TE FH<br>a cc|<br>SINGLE PULSE Notes:<br>Lai |aetT ( THERMAL RESPONSE ) rseeee eeeeeee 1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc | |Ttal<br>0.001 atomFT ENUM L-§s EE trie ll<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 

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6<br>ID = 50A<br>5 Tit tty 4]<br>4<br>Pee)<br>3<br>ENSEEEEEE T = 125°C<br>J<br>2<br>ENS =seee<br>1 PTET T J  = 25°C ELLE<br>0<br>2 4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)  Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance vs. Gate Voltage 

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**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>e 20V k<br>tp 0.01 Ω<br>**----- End of picture text -----**<br>


**Fig 14a.** Unclamped Inductive Test Circuit 

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-<br>≤ 1<br>≤ 0.1<br>**----- End of picture text -----**<br>


**Fig 15a.** Switching Time Test Circuit 

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700<br>ID<br>600<br>ti TOP         9.69A<br>                18.4A<br>500 BOTTOM    50A<br>REE<br>400<br>PNCECEELE<br>300<br>200<br>WINCTT<br>1000 PSS<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

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V(BR)DSS<br>¢— tp —>p|<br>/<br>/ ||<br>J 4\<br>IAS _<br>Fig 14b.<br>V<br>DS<br>90%<br>V \/<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 14b.** Unclamped Inductive Waveforms 

**Fig 15b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + { P.W. + Period ——— + D = —— Period<br>) [©)]    •  Circuit Layout Considerations ) V | t GS=10<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>@ - a | S - ® + RecoveryCurrent r Body Diode ForwardCurrent di/dt /\ ——_<br>©) D.U.T. VDS Waveform Diode Recoverydv/dt ‘ '<br>00 we VDD<br>iv<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Ro (4 •   dv/dt controlledIsp controlled by byDuty Rg Factor "D" Vp p - @) Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 16.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET ® Power MOSFETs 

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**----- Start of picture text -----**<br>
L<br>VCC<br>DUT<br>0 oe eos oe<br>1K S<br>**----- End of picture text -----**<br>


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Id<br>Vds i<br>Vgs<br>I<br>1<br>i)<br>1<br>1<br>1<br>'<br>Vgs(th)<br>—_<br>| 1<br>H 1<br>\ \<br>J |\ \\\<br>1 i '<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 17.** Gate Charge Test Circuit 

**Fig 18.** Gate Charge Waveform 

## **PQFN 5x6 Outline "B" Package Details** 

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf 

For more information on package inspection techniques, please refer to application note AN-1154: 

http://www.irf.com/technical-info/appnotes/an-1154.pdf 

## **PQFN 5x6 Part Marking** 

INTERNATIONAL RECTIFIER LOGO 

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**----- Start of picture text -----**<br>
DATE CODE<br>XXXX P ART NUMBER<br>ASSEMBLY (“4 or 5 digits”)<br>SITE CODE XYWWX M ARKING CODE<br>(Per SCOP 200-002) (Per Marking Spec)<br>XXXXX<br>PIN 1<br>IDENTIFIER<br>le | LOT CODE<br>(Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at:** http://www.irf.com/package/ 

## **PQFN 5x6 Tape and Reel** 

**==> picture [71 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
REEL DIMENSIONS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
TAPE DIMENSIONS<br>|<br>@ 6 /6 6  Goo GO4 |<br>[ke -—— ——P11] W<br>ct)W ct)W Bo<br>\ | |<br>— -<br>CODE DESCRIPTION<br>Ao Dimension design to accommodate the component width<br>Bo Dimension design to accommodate the component lenght<br>Ko Dimension design to accommodate the component thickness<br>W Overall width of the carrier tape<br>P 1 Pitch between successive cavity centers<br>SS<br>**----- End of picture text -----**<br>


## **QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE** 

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**----- Start of picture text -----**<br>
Note:  All dimension are nominal<br>**----- End of picture text -----**<br>


|Type<br>Package<br>Diameter<br>Reel<br>(Inch)|QTY|Width<br>Reel<br>W1<br>(mm)|(mm)<br>Ao|(mm)<br>Bo|(mm)<br>Ko|(mm)<br>P1|(mm)<br>W|Quadrant<br>Pin 1|
|---|---|---|---|---|---|---|---|---|
|5 X 6 PQFN<br>13|4000|12.4|6.300|5.300|1.20|8.00|12|Q1|



**Note: For the most current drawing please refer to IR website at:** http://www.irf.com/package/ 

## **Qualification information**[†] 

|**Qualification information**[†]|||
|---|---|---|
|Qualification level|Industrial<br>††<br>(per JEDEC JES D47F<br>†††guidelines)||
|Moisture Sensitivity Level|PQFN 5mm x 6mm|MS L1<br>(per JEDEC J-S T D-020D<br>†††)|
|RoHS compliant|Yes||



T Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability 

TT Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ 

Applicable version of JEDEC standard at the time of product release. 

Repetitive rating;  pulse width limited by max. junction temperature. 

Starting TJ = 25°C, L = 0.119mH, RG = 25 Ω , IAS = 50A. 

Pulse width ≤ 400μs; duty cycle ≤ 2%. 

R θ is measured at TJ of approximately 90°C. 

When mounted on 1 inch square  2 oz copper pad on 1.5x1.5 in. board of FR-4 material. 

© Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability 

|**Revision History**|**Revision History**|
|---|---|
|**Date**<br>**Revision History**|**Comments**|
|12/16/2013|•Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option  (EOL notice #259)<br>• Updated data sheet with new IR corporate template|
|3/12/2015|Updated data sheet with new IR corporate template<br>• Updated package outline and tape and reel on pages 7 and 8.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFH5301TRPBF/power-mosfet-n-channel-30-v-100-a-1850-ohm-pqfn)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfh5301trpbf/mosfet-n-ch-30v-100a-pqfn-8/dp/2580009)
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