# Dual MOSFET, N Channel + Schottky, 25 V, 145 A, 1100 µohm

![Product image](https://novapart.co/image/farnell:2577150RL/)

**URL**: https://novapart.co/products/IRFH4253DTRPBF/dual-mosfet-n-channel-schottky-25-v-145-a-1100-ohm
**SKU**: IRFH4253DTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.7000
**Stock**: 10+

## Description

Transistor Polarity:Dual N Channel; Continuous Drain Current Id:145A; Drain Source Voltage Vds:25V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 2 - 1 year |
| No. Of Pins | 10Pins |
| Channel Type | N Channel + Schottky |
| Product Range | FastIRFET HEXFET Series |
| Qualification | - |
| Transistor Case Style | QFN |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 50W |
| Power Dissipation P Channel | - |
| Drain Source Voltage Vds N Channel | 25V |
| Drain Source Voltage Vds P Channel | - |
| Continuous Drain Current Id N Channel | 145A |
| Continuous Drain Current Id P Channel | - |
| Drain Source On State Resistance N Channel | 1100µohm |
| Drain Source On State Resistance P Channel | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2577150RL/)

International 

Fast _IR_ FET™ IRFH4253DPbF 

## HEXFET[® ] Power MOSFET 

||**Q1**|**Q2**||
|---|---|---|---|
|**VDSS**|**25**|**25**|**V**|
|**RDS(on)max**<br>(@VGS= 4.5V)|**4.60**|**1.45**|**m**|
|**Qg (typical)**|**10**|**31**|**nC**|
|**ID**<br>**(@TC = 25°C)**|**35**|**35**|**A**|



## **Applications** 

Control and Synchronous MOSFETs for synchronous buck converters 

**==> picture [101 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
DUAL PQFN 5X6 mm<br>**----- End of picture text -----**<br>


## **Features** 

## **Benefits** 

Control and synchronous MOSFETs in one package Increased power density Low charge control MOSFET (10nC typical) Lower switching losses Low RDSON synchronous MOSFET (<1.45m) results in Lower conduction losses Intrinsic Schottky Diode with Low Forward Voltage on Q2  Lower Switching Losses RoHS Compliant, Halogen-Free Environmentally friendlier MSL1, Industrial Qualification Increased reliability 

||**Parameter**|**Q1 Max.**|**Q2 Max.**|**Units**|
|---|---|---|---|---|
|VGS|Gate-to-Source Voltage|± 20||V|
|ID @TC= 25°C|Continuous Drain Current, VGS @4.5V|64|145|A|
|ID @TC= 70°C|Continuous Drain Current, VGS @4.5V|51|116||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 4.5V<br>(Source BondingTechnologyLimited)|35|35||
|IDM|Pulsed Drain Current|120|580||
|PD @TC= 25°C|Power Dissipation|31|50|W|
|PD @TC= 70°C|Power Dissipation|20|32||
||Linear DeratingFactor|0.25|0.40|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150||°C|



## **Thermal Resistance** 

||**Parameter **|**Q1 Max.**|**Q2 Max.**|**Units**|
|---|---|---|---|---|
|RJC (Bottom)Junction-to-Case|Junction-to-Case|4.0|2.5|°C/W|
|RJC (Top)|Junction-to-Case|20|13||
|RJA|Junction-to-Ambient|34|38||
|RJA(<10s)|Junction-to-Ambient|24|24||



Notes  through  are on page 12 

1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                      May 21, 2014 ~~z=°°°°°””.©|0.~~ 

~~IR~~ 

IRFH4253DPbF ~~[Ld~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~pO~~||||||||
|---|---|---|---|---|---|---|---|
|~~pO~~<br>~~a~~|**Parameter**<br>~~a~~|~~ee~~|**Min. T**<br>~~ee ee~~|**Min. Typ. Max. Units**<br>~~ee~~|**. Max. Units**<br>~~ee~~|**. Max. Units**<br>|**Conditions**<br>~~eee~~|
|BVDSS<br>~~pO~~<br>~~a~~<br>~~a~~|Drain-to-Source Breakdown Voltage<br>~~a~~<br>~~a~~|Q1<br>~~ee~~|25<br>~~ee ee~~|–––<br>~~ee~~|–––<br>~~ee~~|V<br><br><br>~~2~~|VGS= 0V, ID= 250µA<br>~~eee~~|
|||Q2<br>~~ee~~<br>~~ee~~|25<br>~~ee ee~~<br>~~ee~~<br>~~==~~|–––<br>~~ee~~<br>~~ee~~<br>~~==~~|–––<br>~~ee~~<br>~~ee~~<br>~~2~~||VGS= 0V, ID= 1.0mA<br>~~eee~~<br>~~eee~~<br>~~2~~|
|BVDSS/TJ<br>~~a ~~<br>~~a~~|Breakdown Voltage Temp. Coefficient<br> ~~a~~<br>~~a~~|Q1<br>~~ee~~<br>~~ee~~|–––<br>~~ee ee~~<br>~~ee~~<br>~~==~~|22<br>~~ee~~<br>~~ee~~<br>~~==~~|––– mV/°C Reference to 25°C, I<br>~~ee ~~<br>~~ee~~<br>~~2~~|––– mV/°C Reference to 25°C, I<br> <br><br>~~2~~|––– mV/°C Reference to 25°C, ID= 1.0mA<br> ~~eee~~<br>~~eee~~<br>~~2~~|
|||Q2<br>~~ee~~|–––<br>~~ee~~<br>~~==~~|22<br>~~ee~~<br>~~==~~|–––<br>~~ee~~<br>~~2~~||Reference to 25°C, ID= 10mA<br>~~eee~~<br>~~2~~|
|RDS(on)<br>~~a ~~<br>~~eS~~<br>~~a~~|Static Drain-to-Source On-Resistance<br> ~~a~~<br>~~eS~~<br>~~a~~|Q1<br>~~ee~~<br>~~eS~~|–––<br>~~ee ~~<br>~~eS~~<br>~~==~~|2.50 3.20<br> ~~ee~~<br>~~eS~~<br>~~==~~|2.50 3.20<br>~~ee ~~<br>~~eS~~<br>~~2~~|mV<br> <br>~~eS~~<br>~~2~~<br>|VGS= 10V, ID= 30A<br> ~~eee~~<br>~~eS~~<br>~~2~~|
|||Q2<br>~~eS~~|–––<br>~~eS~~<br>~~==~~|0.90 1.10<br>~~eS~~<br>~~==~~|0.90 1.10<br>~~eS~~<br>~~2~~||VGS= 10V, ID= 30A<br>~~eS~~<br>~~2~~|
|||Q1<br>~~eS~~<br>~~ee~~|–––<br>~~eS~~<br>~~==~~<br>~~ee~~|3.70 4.60<br>~~eS~~<br>~~==~~<br>~~ee~~|3.70 4.60<br>~~eS~~<br>~~2~~<br>~~ee~~||VGS= 4.5V, ID= 30A<br>~~eS~~<br>~~2~~|
|||Q2<br>~~eS~~<br>~~ee~~<br>~~ee~~|–––<br>~~eS~~<br>~~==~~<br>~~ee~~<br>~~ee~~|1.15 1.45<br>~~eS~~<br>~~==~~<br>~~ee~~<br>~~ee~~|1.15 1.45<br>~~eS~~<br>~~2~~<br>~~ee~~<br>~~ee~~||VGS= 4.5V, ID= 30A<br>~~eS~~<br>~~2~~<br>~~ee~~|
|VGS(th)<br>~~a~~<br>~~a~~|Gate Threshold Voltage<br>~~a~~<br>~~a~~|Q1<br>~~ee~~|1.1<br>~~==~~<br>~~ee~~|1.6<br>~~==~~<br>~~ee~~|2.1<br>~~2~~<br>~~ee~~|V<br>~~2~~<br><br>|Q1: VDS= VGS, ID= 35µA<br>~~2~~<br>~~ee~~|
|||Q2<br>~~ee~~<br>~~eee~~|1.1<br>~~==~~<br>~~ee~~<br>~~eee~~|1.6<br>~~==~~<br>~~ee~~<br>~~ee~~|2.1<br>~~2~~<br>~~ee~~<br>~~ee~~||Q2: VDS= VGS, ID= 100µA<br>~~2~~<br>~~ee~~<br>~~ee~~|
|VGS(th)/TJ<br>~~a ~~<br>~~a~~<br>~~a~~|Gate Threshold Voltage Coefficient<br> ~~a~~<br>~~a~~<br>~~a~~|Q1<br>~~ee~~<br>~~eee~~|–––<br>~~==~~<br>~~ee ~~<br>~~eee~~|-5.7<br>~~==~~<br> ~~ee~~<br>~~ee~~|––– mV/°C Q1: V<br>~~2~~<br>~~ee ~~<br>~~ee~~|––– mV/°C Q1: V<br>~~2~~<br> <br><br>~~ee~~|––– mV/°C Q1: VDS= VGS, ID= 35µA<br>~~2~~<br> ~~ee~~<br>~~ee~~|
|||Q2<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~|-8.9<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~||Q2: VDS= VGS, ID= 100µA<br>~~ee~~<br>~~eee~~|
|IDSS<br>~~a ~~<br>~~a~~|Drain-to-Source Leakage Current<br> ~~a~~<br>~~a~~|Q1<br>~~eee~~<br>~~ee~~|–––<br>~~eee ~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~|1.0<br>~~ee ~~<br>~~ee~~|µA V<br> <br>~~ee~~|µA VDS= 20V, VGS= 0V<br> ~~ee~~<br>~~eee~~|
|||Q2<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|250<br>~~ee~~||VDS= 20V, VGS= 0V<br>~~eee~~|
|IGSS<br>~~a ~~<br>~~pr~~<br>~~a~~|Gate-to-Source Forward Leakage<br> ~~a~~<br>~~pr~~|Q1/Q2<br>~~ee~~<br>~~pr~~|–––<br>~~ee~~<br>~~pr~~|–––<br>~~ee ~~<br>~~pr~~|100<br> ~~ee~~<br>~~pr~~|nA V<br>~~ee ~~<br>~~pr~~<br>|nA VGS= 20V<br> ~~eee~~<br>~~pr~~|
||Gate-to-Source Reverse Leakage<br>~~pr~~<br>~~a~~|Q1/Q2<br>~~pr~~<br>~~ee~~|–––<br>~~pr~~<br>~~ee~~|–––<br>~~pr~~<br>~~ee~~|-100<br>~~pr~~<br>~~ee~~||VGS= -20V<br>~~pr~~<br>~~ee~~|
|gfs<br>~~a~~<br>~~ee a~~|Forward Transconductance<br>~~a~~<br>~~a~~|Q1<br>~~ee~~|131<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|S<br>|VDS= 10V, ID= 30A<br>~~ee~~|
|||Q2<br>~~ee~~<br>~~eee~~|164<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~||VDS= 10V, ID= 30A<br>~~ee~~|
|Qg<br>~~a ~~<br>~~ee a~~<br>~~ee~~|Total Gate Charge<br> ~~a~~<br>~~a~~<br>~~ee eee~~|Q1<br>~~ee~~<br>~~eee~~|–––<br>~~ee ~~<br>~~eee~~|10<br> ~~ee~~<br>~~eee~~|15<br>~~ee ~~<br>~~eee~~|nC<br> <br>~~ee~~|Q1<br>VDS= 13V<br>VGS= 4.5V, ID= 30A<br>nC<br>Q2<br>VDS= 13V<br>VGS= 4.5V, ID= 30A<br> ~~ee~~|
|||Q2<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|31<br>~~eee~~<br>~~eee~~|47<br>~~eee~~<br>~~eee~~|||
|Qgs1<br>~~ee a~~<br>~~ee~~<br>~~ee~~|Pre-Vth Gate-to-Source Charge<br>~~a~~<br>~~ee eee~~<br>~~ee eee~~|Q1<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|2.5<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|||
|||Q2<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|4.9<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|||
|Qgs2<br>~~ee~~<br>~~ee~~<br>~~ee~~|Post-Vth Gate-to-Source Charge<br>~~ee eee~~<br>~~ee eee~~<br>~~ee~~|Q1<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|1.6<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|||
|||Q2<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|5.4<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|||
|Qgd<br>~~ee ~~<br>~~ee~~<br>~~ee~~|Gate-to-Drain Charge<br> ~~ee eee~~<br>~~ee~~<br>~~ee eee~~|Q1<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|3.8<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|||
|||Q2<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|12<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|||
|Qgodr<br>~~ee ~~<br>~~ee~~<br>~~es ee~~|Gate Charge Overdrive<br> ~~ee~~<br>~~ee eee~~<br>~~ee eee~~|Q1<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|2.1<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|||
|||Q2<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|8.7<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|||
|Qsw<br>~~ee~~<br>~~es ee~~<br>~~a~~|Switch Charge (Qgs2+ Qgd)<br>~~ee eee~~<br>~~ee eee~~<br>~~a~~|Q1<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|5.4<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|||
|||Q2<br>~~eee~~<br>~~ere~~|–––<br>~~eee~~<br>~~ere~~|17.4<br>~~eee~~<br>~~ee ee~~|–––<br>~~eee~~<br>~~ee~~|||
|Qoss<br>~~es ee~~<br>~~a~~|Output Charge<br>~~ee eee~~<br>~~a~~|Q1<br>~~eee~~<br>~~ere~~|–––<br>~~eee~~<br>~~ere~~|10<br>~~eee~~<br>~~ee ee~~|–––<br>~~eee~~<br>~~ee~~|nC V<br>~~ee~~|nC VDS= 16V, VGS= 0V|
|||Q2<br>~~ere~~|–––<br>~~ere~~|31<br>~~ee ee~~|–––<br>~~ee~~|||
|RG<br>~~a ~~<br>~~a~~<br>~~ee~~|Gate Resistance<br> ~~a~~<br>~~a~~<br>~~ee eee~~|Q1<br>~~ere~~<br>~~ce~~|–––<br>~~ere ~~<br>~~ce~~|2.4<br> ~~ee ee~~<br>~~e~~|–––<br>~~ee~~<br>~~e~~|<br>~~ee~~<br>~~eee~~|~~ee~~|
|||Q2<br>~~ce~~<br>~~eee~~|–––<br>~~ce~~<br>~~eee~~|1.1<br>~~e~~<br>~~eee~~|–––<br>~~e~~<br>~~eee~~|||
|td(on)<br>~~a ~~<br>~~ee~~<br>~~ee~~|Turn-On Delay Time<br> ~~a~~<br>~~ee eee~~<br>~~ee~~|Q1<br>~~ce~~<br>~~eee~~|–––<br>~~ce~~<br>~~eee~~|10<br>~~e~~<br>~~eee~~|–––<br>~~e~~<br>~~eee~~|ns<br>~~eee~~|Q1<br>VDS= 13V VGS= 4.5V<br>ID= 30A, Rg = 1.8<br>Q2<br>VDS= 13V VGS= 4.5V<br>ID= 30A, Rg = 1.8<br>~~ee~~|
|||Q2<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|16<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|||
|tr<br>~~ee ~~<br>~~ee~~<br>~~ee~~|Rise Time<br> ~~ee eee~~<br>~~ee~~<br>~~ee eee~~|Q1<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|61<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|||
|||Q2<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|98<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|||
|td(off)<br>~~ee ~~<br>~~ee~~<br>~~ee~~|Turn-Off Delay Time<br> ~~ee~~<br>~~ee eee~~<br>~~ee eee~~|Q1<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|13<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|||
|||Q2<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|26<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|||
|tf<br>~~ee ~~<br>~~ee~~<br>~~ee~~|Fall Time<br> ~~ee eee~~<br>~~ee eee~~<br>~~eee~~|Q1<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|15<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|||
|||Q2<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|65<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|||
|Ciss<br>~~ee ~~<br>~~ee~~<br>~~ee ee~~|Input Capacitance<br> ~~ee eee~~<br>~~eee~~<br>~~ee eee~~|Q1<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|1314 –––<br>~~eee~~<br>~~eee~~|1314 –––<br>~~eee~~<br>~~eee~~|pF V|VGS= 0V<br>pF VDS= 13V<br>ƒ = 1.0MHz|
|||Q2<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|3756 –––<br>~~eee~~<br>~~eee~~|3756 –––<br>~~eee~~<br>~~eee~~|||
|Coss<br>~~ee~~<br>~~ee ee~~<br>~~ee~~|Output Capacitance<br>~~eee~~<br>~~ee eee~~<br>~~ee~~|Q1<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|365<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|||
|||Q2<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|1205 –––<br>~~eee~~<br>~~eee~~|1205 –––<br>~~eee~~<br>~~eee~~|||
|Crss<br>~~ee ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee eee~~<br>~~ee~~|Q1<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|92<br>~~eee~~<br>~~eee~~|–––<br>~~eee~~<br>~~eee~~|||
|||Q2<br>~~eee~~|–––<br>~~eee~~|286<br>~~eee~~|–––<br>~~eee~~|||



~~TIGR~~ 

IRFH4253DPbF ~~[Ln~~ 

## **Avalanche Characteristics** 

|~~es~~<br>~~SSS~~|**Parameter**<br>~~GG~~<br>~~SSS~~|~~GG~~<br>~~See~~|**Min. Typ. Max. Units**<br>~~GG~~<br>~~See~~|**Min. Typ. Max. Units**<br>~~GG~~<br>~~See~~|**Min. Typ. Max. Units**<br>~~GG~~<br>~~See~~|**Min. Typ. Max. Units**<br>~~GG~~<br>~~See~~|**Min. Typ. Max. Units**<br>**Conditions**<br>~~GG~~<br>~~See~~|
|---|---|---|---|---|---|---|---|
|IS<br>~~es~~<br>~~SSS~~<br>~~ee~~|Continuous Source Current<br>(BodyDiode)<br>~~GG~~<br>~~SSS~~<br>~~ee~~|Q1<br>~~GG~~<br>~~See~~|–––<br>~~GG~~<br>~~See~~|–––<br>~~GG~~<br>~~See~~|35<br>~~GG~~<br>~~See~~|A<br>~~GG~~<br>~~See~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>~~GG~~<br>~~See~~<br>~~Ay~~<br>~~ee~~|
|||Q2<br>~~See~~|–––<br>~~See~~|–––<br>~~See~~|35<br>~~See~~|||
|ISM<br>~~SSS~~<br>~~ee~~<br>~~ee~~|Pulsed Source Current<br>(BodyDiode)<br>~~SSS~~<br>~~ee~~<br>~~ec~~|Q1<br>~~See~~|–––<br>~~See~~|–––<br>~~See~~|120<br>~~See~~|A<br>~~See~~<br>~~ee~~||
|||Q2<br>~~See~~<br>~~c~~|–––<br>~~See~~<br>~~ee~~|––– 580<br>~~See~~<br>~~ee~~|––– 580<br>~~See~~<br>~~ee~~|||
|VSD<br>~~SSS~~<br>~~ee~~<br>~~ee~~|Diode Forward Voltage<br>~~SSS ~~<br>~~ee~~<br>~~ec~~|Q1<br> ~~See~~<br>~~c~~|–––<br>~~See~~<br>~~ee~~|–––<br>~~See~~<br>~~ee~~|1.0<br>~~See~~<br>~~ee~~|V<br>~~See~~<br>~~ee~~|TJ= 25°C,IS= 30A,VGS= 0V<br>~~See~~<br>~~Ay~~<br>~~ee~~|
|||Q2<br>~~c~~|–––<br>~~ee~~|–––<br>~~ee~~|0.75<br>~~ee~~||TJ= 25°C,IS= 30A,VGS= 0V<br>~~ee~~|
|trr<br>~~ee~~<br>~~I~~|Reverse Recovery Time<br>~~ec~~<br>~~I~~<br>~~ee eee~~|Q1<br>~~c~~<br>~~I~~|–––<br>~~ee ~~|16<br> ~~ee ~~|–––<br> ~~ee~~|ns Q1  T<br>~~ee~~<br>~~eee~~|ns Q1  TJ= 25°C, IF= 30A<br>VDD= 13V, di/dt = 235A/µs<br>nC Q2  TJ= 25°C, IF= 30A<br>VDD= 13V,di/dt = 250A/µs<br>~~ee~~|
|||Q2<br>~~I~~<br>~~eee~~|–––<br>~~eee~~|29<br>~~eee~~|–––<br>~~eee~~|||
|Qrr<br>~~a~~|Reverse Recovery Charge<br>~~a~~<br>~~ee eee~~|Q1<br>~~a~~<br>~~eee~~|–––<br>~~eee~~|13<br>~~eee~~|–––<br>~~eee~~|nC Q2  T<br>~~eee~~||
|||Q2<br>~~a~~<br>~~eee~~|–––<br>~~eee~~|41<br>~~eee~~|–––<br>~~eee~~|||



3 

Submit Datasheet Feedback                      May 21, 2014 

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IRFH4253DPbF ~~[~~ 

## ~~IéaR~~ 

**==> picture [467 x 681] intentionally omitted <==**

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Q1 - Control FET  Q2 - Synchronous FET<br>1000 1000<br>VGS VGS<br>TOP           10V TOP           10V<br>5.0V 5.0V<br>4.5V 4.5V<br>3.5V 3.5V<br>100 3.1V 100 3.0V<br>2.9V 2.7V<br>2.7V 2.5V<br>BOTTOM 2.5V BOTTOM 2.3V<br>10 10<br>1 1 2.3V<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>2.5V Tj = 25°C Tj = 25°C<br>0.1 a 0.1 ff<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics  Fig 2.   Typical Output Characteristics<br>1000 1000<br>VGS VGS<br>TOP           10V TOP           10V<br>5.0V 5.0V<br>4.5V 4.5V<br>3.5V 3.5V<br>3.1V 3.0V<br>100 2.9V 2.7V 100 2.7V 2.5V<br>BOTTOM 2.5V BOTTOM 2.3V<br>2.3V<br>10 10<br>2.5V<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 150°C Tj = 150°C<br>1 aoa 1 a<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 1000<br>100 CELE 100 TJ = 150°C ran<br>TJ = 150°C<br>10 10<br>TJ = 25°C TJ = 25°C<br>1 1<br>VDS = 15V VDS = 15V<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>0.1 A 0.1 OT<br>1.5 2.0 2.5 3.0 3.5 4.0 1.0 2.0 3.0 4.0 5.0<br>VGS, Gate-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

**Fig 6.** Typical Transfer Characteristics 

**Fig 5.** Typical Transfer Characteristics 

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**Q1 - Control FET** 

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**----- Start of picture text -----**<br>
Q2 - Synchronous FET<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
100000 100000<br>VGS   = 0V,       f = 1 MHZ VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds SHORTED Ciss    = C gs + Cgd,  C ds SHORTED<br>C rss    = C gd  C rss    = C gd<br>10000 C oss   = C ds  + C gd Coss   = Cds + Cgd<br>10000<br>C iss Ciss<br>1000 Coss HT C oss<br>= C rss 1000 Srl<br>100<br>‘ot oe C rss<br>Cm tH<br>10 100 HE<br>1 10 100 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 7.   Typical Capacitance vs. Drain-to-Source Voltage  Fig 8.   Typical Capacitance vs. Drain-to-Source Voltage<br>14.0 14.0<br>ID= 30A ID= 30A<br>12.0 12.0<br>TT V TT DS= 20V yy TTT VDS= 20V TTT<br>10.0 V DS = 13V 10.0 V DS = 13V<br>8.0 || J \ | 8.0 | | | Via<br>6.0 Bw ae 6.0 Pi |AL<br>4.0 P| fey | 4.0 Pi | A Tt |<br>2.00.0 PAsYi | i i 2.00.0 PLYYi it} tttd|<br>0 5 10 15 20 25 30 0 10 20 30 40 50 60 70 80<br> QG,  Total Gate Charge (nC)  QG,  Total Gate Charge (nC)<br>C, Capacitance (pF) C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 10.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on) OPERATION IN THIS AREA LIMITED BY R DS (on)<br>100 Sy iw Set 1000 asDc<br>100µsec 100 100µsec<br>10 Limited by package<br>10 Limited by package<br>1 Se 1msec See 1msec<br>1<br>10msec<br>10msec<br>0.1 Tc = 25°C SY 0.1 iii Tc = 25 ° C<br>Tj = 150°C DC Tj = 150°C DC<br>Single Pulse Single Pulse<br>0.01 be Efi 0.01 a=n,<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A) ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Safe Operating Area 

**Fig 12.** Maximum Safe Operating Area 

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## ~~LtaR~~ 

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Q2 - Synchronous FET<br>**----- End of picture text -----**<br>


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Q1 - Control FET<br>1.6 1.8<br>ID = 30A ID = 30A<br>VGS = 4.5V TO. 1.6 V GS  = 4.5V To<br>1.4<br>1.4<br>1.2<br>ntact enc<br>1.2<br>1.0<br>1.0<br>He y Ce|<br>0.8<br>0.8<br>reece EEE<br>0.6 0.6<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C) TJ , Junction Temperature (°C)<br>  Normalized On-Resistance vs. Temperature  Fig 14.   Normalized On-Resistance vs. Temperature<br>1000 1000<br>100 100<br>TJ = 150°C<br>TJ = 150°C<br>TJ = 25 ° C<br>10 iy 10 - fp<br>ff) TJ = 25°C Lf<br>V GS  = 0V V GS  = 0V<br>1.0 fii} 1.0 {ff<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.2 0.4 0.6 0.8 1.0<br>VSD, Source-to-Drain Voltage (V) VSD, Source-to-Drain Voltage (V)<br>  Typical Source-Drain Diode Forward Voltage  Fig 16.   Typical Source-Drain Diode Forward Voltage<br>10 5.0<br>ID = 30A ID = 30A<br>8 Tithe 4.0 two<br>6 3.0<br>cot) IEEE<br>TJ = 125°C<br>4 2.0<br>RCE) EEE<br>TJ = 125°C<br>2 1.0<br>Neots =  A<br>TJ = 25°C<br>TJ = 25°C<br>0 0.0<br>2 cCHPESTE 4 6 8 10 12 14 16 18 20 = 2 CSSESEEER 4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V) VGS, Gate -to -Source Voltage  (V)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized) RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ISD, Reverse Drain Current (A) ISD, Reverse Drain Current (A)<br>)  ) <br>RDS(on),  Drain-to -Source On Resistance (m RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 13.** Normalized On-Resistance vs. Temperature 

**Fig 15.** Typical Source-Drain Diode Forward Voltage 

**Fig 17.** Typical On-Resistance vs. Gate Voltage **Fig 18.** Typical On-Resistance vs. Gate Voltage 

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Q2 - Synchronous FET<br>**----- End of picture text -----**<br>


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Q1 - Control FET  Q2 - Synchronous FET<br>70 160<br>60 |! Limited By Package 140 Os ee ee<br>Limited By Package<br>120<br>50<br>Py<br>100<br>40<br>A<br>80<br>pb [At] |) PS<br>30<br>oN a awe<br>60<br>20<br>40<br>BSEEN) BEES<br>10<br>20<br>FEE ++<br>0 0<br>25 50 75 100 125 150 25 50 75 100 125 150<br> TC , Case Temperature (°C)  TC , Case Temperature (°C)<br>Maximum Drain Current vs. Case Temperature  Fig 20.   Maximum Drain Current vs. Case Temperature<br>2.2 2.0<br>2.0 NLL LOTTI<br>1.6<br>1.8<br>1.2<br>TPN 9 CPRNTP<br>1.6 ID = 35µA ID = 100µA<br>0.8<br>HONEA Teh TPN CENT<br>1.4<br>COPE 0.4 ETT<br>1.2 CCCCCCCEN TTTT EN:<br>1.0 0.0<br>-75 -50 -25 0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C ) TJ , Temperature ( °C )<br>Fig 21.   Threshold Voltage vs. Temperature  Fig 22.   Threshold Voltage vs. Temperature<br>250 2500<br>ID ID<br>TOP         7.7A TOP         7.6A<br>200 12A 2000 17A<br>BOTTOM 30A BOTTOM 60A<br>150 Kepe 1500 Kepe<br>ATE ATE<br>100 1000<br>CNT) = NET<br>50 500<br>SST} = PAST<br>| POSS |CoS<br>0 0<br>25 50 75 100 125 150 25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C) Starting TJ , Junction Temperature (°C)<br>ID,  Drain Current (A) ID,  Drain Current (A)<br>VGS(th), Gate threshold Voltage (V) VGS(th), Gate threshold Voltage (V)<br>EAS , Single Pulse Avalanche Energy (mJ) EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 20.** Maximum Drain Current vs. Case Temperature 

**Fig 19.** Maximum Drain Current vs. Case Temperature 

**Fig 22.** Threshold Voltage vs. Temperature 

**Fig 23.** Maximum Avalanche Energy vs. Drain Current 

**Fig 24.** Maximum Avalanche Energy vs. Drain Current 

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100<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 125°C and<br>Tstart =25°C (Single Pulse)<br>= —<br>10 HRS err<br>1<br>auANILaiLDH aPert aS<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 125°C.<br>eelll TH<br>0.1 ee BG Bai<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 25.   Max Avalanche Current vs. Pulse Width (Q1)<br>100<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 125°C and<br>Tstart =25°C (Single Pulse)<br>10 THIET cay ree rr<br>CT aaa Rea men man<br>Allowed avalanche Current vs avalanche<br>1 pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 125°C.<br>Il [ANU] So<br>AeneroPHI<br>0.1 AL i<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00<br>tav (sec)<br>Fig 26.   Max Avalanche Current vs. Pulse Width (Q2)<br>10<br>LTT Lee<br>D = 0.50<br>1<br>0.20<br>= 0.10 Hommmaniyamse ==<br>0.05<br>0.1 See 0.02 atl<br>0.01<br>ap >0 S|alll AULAOU mAOt) EOal BAUOA<br>0.01 L [at] SINGLE PULSE<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 All EE es<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJC ) °C/W<br>Avalanche Current (A)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 27.** Maximum Effective Transient Thermal Impedance, Junction-to-Case (Q1) 

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10<br>TI TTLo<br>D = 0.50<br>1<br>0.20 Lee<br>rr —<br>0.10<br>Sere 0.05<br>0.1<br>= 0.02 SSS Ses ae il<br>0.01<br>IE<br>0.01 a AE ll<br>Bee SINGLE PULSE  A<br>0.001 Padi A A<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>Hil Hes<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 28.** Maximum Effective Transient Thermal Impedance, Junction-to-Case (Q2) 

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**Fig 29.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>20V aeJL IAS<br>tp 0.01<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 30a.** Unclamped Inductive Test Circuit 

**Fig 30b.** Unclamped Inductive Waveforms 

**Fig 31a.** Switching Time Test Circuit 

**Fig 31b.** Switching Time Waveforms 

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VDD<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>Vgs<br>|<br>Vgs(th) ! H<br>' ! i i !<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 32a.** Gate Charge Test Circuit 

**Fig 32b.** Gate Charge Waveform 

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## **Dual PQFN 5x6 Outline “H” Package Details** 

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**----- Start of picture text -----**<br>
C<br>4 D<br>INDEX AREA(D/2xE/2) > A B A1 L1 D2 . PIN#1 IDR0.30<br>7x L2<br>8x b<br>la — | :<br>D1 8x K<br>1.15 0.48<br>TOP VIEW<br>SIDE VIEW<br>D im e n s io n  T a b le<br>V  : V e r y  T h in N O T E 1.08 0.94<br>BOTTOM VIEW<br>SEATING PLANE<br>E e E2 E1<br>1.21<br>**----- End of picture text -----**<br>


|D im e n s io n  T a b le|D im e n s io n  T a b le|D im e n s io n  T a b le|D im e n s io n  T a b le|D im e n s io n  T a b le|
|---|---|---|---|---|
|Symbol<br>Thickness|V  : V e r y  T h in|||N O T E|
||M IN IM U M|N O M IN A L|M A X IM U M||
|Symbol<br>A|0 .8 0|0 .9 0|1.0 0||
|A 1|0 .0 0|0 .0 2|0 .0 5||
|b|0 .3 0|0 .4 0|0 .5 0|6|
|D|6 .0 0  B S C||||
|E|5 .0 0  B S C||||
|e|1.2 7  B S C||||
|D 1|2 .4 2|2 .5 7|2 .6 7||
|E 1|4 .4 1|4 .5 6|4 .6 6||
|D 2|0 .7 8|0 .9 3|1.0 3||
|E 2|4 .0 1|4 .16|4 .2 6||
|K|0 .2 0|- - -|- - -||
|L 1|1.6 7|1.7 7|1.8 7||
|L 2|0 .4 0|0 .5 0|0 .6 0||



For more information on board mounting, including footprint and stencil recommendation, please refer to - - application note AN-1136: http://www.irf.com/technical info/appnotes/an 1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.irf.com/technical info/appnotes/an 1154.pdf 

**PQFN 5x6 Outline "H" Part Marking** 

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INTERNATIONAL<br>RECTIFIER LOGO<br>DATE CODE IOR<br>XXXX P ART NUMBER<br>ASSEMBLY (“4 or 5 digits”)<br>SITE CODE XYWWX M ARKING CODE<br>(Per SCOP 200-002) (Per Marking Spec)<br>XXXXX<br>PIN 1 -®@ \<br>IDENTIFIER<br>LOT CODE<br>(Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **Dual PQFN 5x6 Outline Tape and Reel** 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification level**|Industrial<br>(per JEDEC JESD47F††guidelines )||
|**Moisture Sensitivity Level**|DUAL PQFN 5mm x 6mm|MSL1<br>(per JEDEC J-STD-020D††)|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability 

- †† Applicable version of JEDEC standard at the time of product release. 

## **Notes:** 

-  Repetitive rating;  pulse width limited by max. junction temperature. 

-  Starting TJ = 25°C, 

   - Q1: L = 0.14mH, RG = 50, IAS = 30A; 

   - Q2: L = 0.32mH, RG = 50, IAS = 60A. 

-  Pulse width ≤ 400µs; duty cycle ≤ 2%. 

-  R is measured at TJ approximately 90°C. 

-  When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details: - - 

- http://www.irf.com/technical info/appnotes/an 994.pdf 

-   Calculated continuous current based on maximum allowable junction temperature. 

-  Current is limited to Q1 = 35A & Q2 = 35A by source bonding technology. 

-  Pulsed drain current is limited to 140A by source bonding technology. 

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## **Revision History** 

|**Revision History**||
|---|---|
|**Date**|**Comments**|
|08/06/2013|<br>Added the Fast_IR_FET logo, on page 1.<br><br>Changed the package limitation current from 45A to 35A, on page 1.<br><br>Added the part marking drawing, on page 11.|
|01/16/2014|<br>Updated the MSL level from MSL2 to MSL1, on page 1 & 12.|
|05/21/2014|<br>Updated fig. 25 to show the max avalanche plateau at 35A, on page 8.<br><br>Corrected fig. 26 to cap the curves at package limitation current of 35A, on page 8.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

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---

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