# Power MOSFET, N Channel, 25 V, 44 A, 1100 µohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:2577196/)

**URL**: https://novapart.co/products/IRFH4210DTRPBF/power-mosfet-n-channel-25-v-44-a-1100-ohm-pqfn
**SKU**: IRFH4210DTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.2800
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:25V; On Resistance Rds(on):850µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | FastIRFET, HEXFET |
| Qualification | - |
| Power Dissipation | 3.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PQFN |
| Drain Source Voltage Vds | 25V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 44A |
| Drain Source On State Resistance | 1100µohm |
| Gate Source Threshold Voltage Max | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2577196/)

International 

Fast _IR_ FET™ IRFH4210DPbF 

HEXFET[® ] Power MOSFET 

|**VDSS**|**25**|**V**|
|---|---|---|
|**RDS(on)max**<br>(@ VGS=10V)|**1.10**|**1.35**<br>**m**|
|(@VGS= 4.5V)|**1.35**||
|**Qg (typical)**|**37.0**|**nC**|
|**ID**<br>**(@TC (Bottom) = 25°C)**|**100**|**A**|



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PQFN 5X6 mm<br>**----- End of picture text -----**<br>


## **Applications** 

Synchronous Rectifier MOSFET for Synchronous Buck Converters 

## **Benefits** 

|||**Benefits**|
|---|---|---|
|**Features**||**Benefits**|
|Low RDS(ON)(<1.10 m)||Lower Conduction Losses|
|Schottky Intrinsic Diode with Low Forward Voltage||Lower Switching Losses|
|Low Thermal Resistance to PCB (<1.0°C/W)||Enable better thermal dissipation|
|Low Profile (<0.9 mm)|results inIncreased Power Density|Increased Power Density|
|Industry-Standard Pinout||Multi-Vendor Compatibility|
|Compatible with Existing Surface Mount Techniques|Compatible with Existing Surface Mount Techniques|Easier Manufacturing|
|RoHS Compliant,Halogen-Free||EnvironmentallyFriendlier|
|MSL1,IndustrialQualification||IncreasedReliability|



|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRFH4210DPbF|PQFN 5mm x 6 mm|Tape and Reel|4000|IRFH4210DTRPbF|



## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VGS|Gate-to-Source Voltage|± 20|V|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|44|A|
|ID@ TC(Bottom)= 25°C|Continuous Drain Current, VGS@ 10V|266||
|ID@ TC(Bottom)= 100°C|Continuous Drain Current, VGS@ 10V|168||
|ID@ TC(Bottom)= 25°C|Continuous Drain Current, VGS@ 10V<br>(Source BondingTechnologyLimited)|100||
|IDM|Pulsed Drain Current|400||
|PD@TA= 25°C|Power Dissipation|3.5|W|
|PD@TC(Bottom)= 25°C|Power Dissipation|125||
||Linear Derating Factor|0.028|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|



Notes  through   are on page 9 

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**Static @ TJ = 25°C (unless otherwise specified)** 

|**Static @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|**Static @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|**Static @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|**Static @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|**Static @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|**Static @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|**Static @ TJ = 25°C (unless otherwise specified)@ TJ = 25°C (unless otherwise specified) TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|
|---|---|---|---|---|---|---|
|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Units**<br>**Conditions**<br>BVDSS<br>Drain-to-SourceBreakdown Voltage<br>25<br>–––<br>–––<br>V<br>VGS=0V,ID= 1mA<br>BVDSS/TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>19<br>–––<br>mV/°C Reference to 25°C,ID= 10mA<br>~~———————~~|||||||
|RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>0.85<br>1.10<br>m<br>VGS= 10V,ID=50A<br>–––<br>1.10<br>1.35<br>VGS= 4.5V,ID= 50A<br>VGS(th)<br>Gate Threshold Voltage<br>1.1<br>1.6<br>2.1<br>V<br>VDS= VGS, ID= 100µA<br>VGS(th)<br>Gate Threshold Voltage Coefficient<br>–––<br>-10<br>–––<br>mV/°C<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>250<br>µA<br>VDS= 20V,VGS= 0V<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS =20V<br>Gate-to-SourceReverseLeakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>gfs<br>Forward Transconductance<br>392<br>–––<br>–––<br>S<br>VDS =13V, ID =50A<br>~~——~~<br>~~————~~<br>~~es~~<br>~~ee~~|||||||
|Qg<br>TotalGate Charge|–––|77.0||–––|nC|VGS= 10V,VDS= 13V,ID=50A|
|Qg<br>Total Gate Charge|–––|37.0||55.5|||
|Qgs1<br>Pre-Vth Gate-to-Source Charge|–––|7.6||–––||VDS= 13V|
|Qgs2<br>Post-VthGate-to-Source Charge|–––|6.4||–––|nC|VGS= 4.5V|
|Qgd<br>Gate-to-Drain Charge|–––|13.2||–––||ID= 50A|
|Qgodr<br>Gate Charge Overdrive|–––|9.8||–––|||
|Qsw<br>Switch Charge(Qgs2+Qgd)|–––|19.6||–––|||
|Qoss<br>Output Charge|–––|37||–––|nC|VDS= 16V,VGS=0V|
|RG<br>Gate Resistance|–––|1.3||–––|||
|td(on)<br>Turn-On Delay Time<br>–––<br>19<br>–––<br>VDD= 13V, VGS= 4.5V<br>tr<br>RiseTime<br>–––<br>45<br>–––<br>ns<br>ID= 50A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>24<br>–––<br>RG=1.8<br>tf<br>Fall Time<br>–––<br>16<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>4812<br>–––<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>1459<br>–––<br>pF<br>VDS= 13V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>355<br>–––<br>ƒ= 1.0MHz<br>**Avalanche Characteristics**<br>~~—————~~<br>~~ee~~<br>~~—————~~<br>~~ee i~~|||||||
|**Parameter**<br>**Typ.**<br>**Max.**<br>EAS<br>SinglePulseAvalancheEnergy <br>–––<br>247<br>IAR<br>Avalanche Current<br>–––<br>50<br>~~eS~~|||||||
|**Diode Characteristics**|||||||
|**Parameter**|**Min.**|**Typ.**|**Max.**||**Units**|**Conditions**|
|IS<br>Continuous Source Current<br>(BodyDiode)<br>ISM<br>Pulsed Source Current<br>(BodyDiode) |–––<br>–––|–––<br>–––|100<br>400||A|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.|
|VSD<br>DiodeForwardVoltage|–––|–––||0.75|V|TJ= 25°C,IS=50A,VGS=0V|
|trr<br>ReverseRecoveryTime<br>–––<br>27<br>41<br>ns<br>TJ= 25°C, IF= 50A, VDD= 13V<br>Qrr<br>Reverse Recovery Charge<br>–––<br>59<br>89<br>nC<br>di/dt = 300A/µs<br>~~———————~~|||||||
|**Thermal Resistance**|||||||
|**Parameter**||||**Typ. **||**Max.**<br>**Units**|
|RJC (Bottom)Junction-to-Case|||||–––|1.0|
|RJC (Top)<br>Junction-to-Case|||||–––|22<br>°C/W|
|RJA<br>Junction-to-Ambient|||||–––|36|
|RJA (<10s)<br>Junction-to-Ambient|||||–––|21|



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1000<br>VGS<br>TOP           10V<br>5.0V<br>4.5V<br>4.0V<br>3.5V<br>100 3.25V<br>3.0V<br>BOTTOM 2.75V<br>10<br>2.75V Sa<br>60µs PULSE WIDTH60µs PULSE WIDTH<br>Tj = 25°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>100 |} | Le<br>TJ = 150°CJ = 150°C= 150°C 150°C°CC<br>10<br>TJ = 25°CJ = 25°C= 25°C°CC<br>1<br>/<br>VDS = 10VDS = 10V= 10V<br>60µs PULSE WIDTH60µs PULSE WIDTH<br>0.1 Ay<br>1.5 2.0 2.5 3.0 3.5 4.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000 1000<br>VGS VGS<br>TOP           10V TOP           10V<br>5.0V 5.0V<br>4.5V 4.5V<br>4.0V 4.0V<br>3.5V 3.5V<br>100 3.25V 3.25V<br>3.0V 3.0V<br>BOTTOM 2.75V BOTTOM 2.75V<br>100<br>10<br>2.75V Sa 2.75V<br> 60µs PULSE WIDTH<br>60µs PULSE WIDTH60µs PULSE WIDTH<br>Tj = 150°C<br>Tj = 25°C<br>1 10<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>Fig 1.   Typical Output Characteristics<br>1000 1.8<br>ID = 50A<br>1.6 V GS  = 10V<br>100 |} | Le BERREDD<br>TJ = 150°CJ = 150°C= 150°C 150°C°CC 1.4<br>10 1.2<br>TJ = 25°CJ = 25°C= 25°C°CC<br>1.0<br>1<br>/ A  7<br>0.8<br>VDS = 10VDS = 10V= 10V<br>60µs PULSE WIDTH60µs PULSE WIDTH<br>0.1 Ay 0.6 bettie<br>1.5 2.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig 3.   Typical Transfer Characteristics  Fig 4.   Normalized On-Resistance vs. Temperature<br>100000 14.0<br>VGS   = 0V,       f = 1 MHZ ID= 50A<br>Ciss   = Cgs + Cgd,  C ds SHORTED 12.0<br>C rss    = C gd  VDS= 20V<br>Coss   = Cds + Cgd 10.0 VDS= 13V<br>10000<br>Ciss 8.0<br>— f-<br>Coss<br>6.0<br>1000 ie<br>Crss ||| ee 4.0  SEE<br>2.0<br>100 Elitiinnt 0.0 ELLE<br>IN || ee eacaneanee<br>1 10 100 0 10 20 30 40 50 60 70 80 90 100<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 3 www.irf.com © 2015 International Rectifier ~~SS~~ 

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1000<br>100 TJ = 150 ° C a<br>TJ = 25 ° C<br>10 ff<br>V GS  = 0V<br>1.0 af<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, Source-to-Drain Voltage (V)<br>Fig 7.   Typical Source-Drain Diode Forward Voltage<br>300<br>Limited by package<br>250<br>ee<br>7<br>200<br>150 P|<br>100 —\)<br>50 ma<br>0<br>PT TT<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ISD, Reverse Drain Current (A)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>100µsec<br>100<br>Limited by package<br>10<br>10msec<br>1msec<br>ike DC NE<br>1<br>Tc = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.1 sae<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>2.5<br>2.0<br>Ree<br>SSS<br>1.5<br>TSS ID = 100µA<br>1.0 I D = 250µA<br>ID = 1.0mA DP<br>ID = 1.0A<br>0.5<br>7 TIN<br>0.0<br>LELLL ELIA\<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>ID,  Drain-to-Source Current (A)<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Drain-to–Source Breakdown Voltage 

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10<br>1<br>D = 0.50<br>0.20<br>0.1 0.10<br>0.05<br>0.02<br>0.01<br>0.01 |eeSO Sry<br>SINGLE PULSE Notes:<br>Se ( THERMAL RESPONSE ) era 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 tlt2 a a<br>ium UEPs<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 11.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


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1000<br>4.0<br>ID = 50A ID<br>TOP         13A<br>800 24A<br>3.0 BOTTOM 50A<br>Hi 600 Ne<br>2.0<br>WUE) TJ = 125°C 400 Noa<br>1.0<br>200<br>Ae RT<br>TJ = 25°C<br>0<br>0.0<br>25 50 75 100 125 150<br>2 4 6 8 10 12 14 16 18 20<br>PTA =  LOSS<br>Starting TJ , Junction Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 12.   On– Resistance vs. Gate Voltage  Fig 13.   Maximum Avalanche Energy vs. Drain Current<br>1000<br>Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 125°C and<br>us aug HAH a Tstart =25°C (Single Pulse)<br>100<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>10 Tstart = 125°C.<br>fait AH<br>CT<br>1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02<br>tav (sec)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m EAS , Single Pulse Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

**Fig 12.** On– Resistance vs. Gate Voltage 

**Fig 14.** Typical Avalanche Current vs. Pulsewidth 

5 ~~—~~ 

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## IRFH4210DPbF ~~[~~ 

**Fig 15.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>tp 0.01<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17a.** Switching Time Test Circuit 

**Fig 17b.** Switching Time Waveforms 

**Fig 18.** Gate Charge Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>Vgs<br>|<br>Vgs(th)<br>a<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 19.** Gate Charge Waveform 

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## **PQFN 5x6 Outline "B" Package Details** 

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf 

For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.irf.com/technical info/appnotes/an 1154.pdf 

## **PQFN 5x6 Part Marking** 

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INTERNATIONAL<br>RECTIFIER LOGO<br>**----- End of picture text -----**<br>


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DATE CODE<br>XXXX P ART NUMBER<br>ASSEMBLY (“4 or 5 digits”)<br>SITE CODE XYWWX M ARKING CODE<br>(Per SCOP 200-002) (Per Marking Spec)<br>XXXXX<br>PIN 1 v @ \<br>IDENTIFIER<br>LOT CODE<br>(Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **PQFN 5x6 Tape and Reel** 

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**----- Start of picture text -----**<br>
REEL DIMENSIONS TAPE DIMENSIONS<br>**----- End of picture text -----**<br>


|CODE|DESCRIPTION|
|---|---|
|Ao|Dimension design to accommodate the component width|
|Bo<br>Ao|Dimension design to accommodate the component width<br>Dimension design to accommodate the component lenght|
|Ko|Dimension design to accommodate the component thickness|
|W|Overall width of the carrier tape|
|P1|Pitch between successive cavitycenters|



**QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE** 

Note:  All dimension are nominal 

|Type<br>Package<br>Diameter<br>Reel<br>(Inch)|QTY|Width<br>Reel<br>W1<br>(mm)|(mm)<br>Ao|(mm)<br>Bo|(mm)<br>Ko|(mm)<br>P1|(mm)<br>W|Quadrant<br>Pin 1|
|---|---|---|---|---|---|---|---|---|
|5 X 6 PQFN<br>13|4000|12.4|6.300|5.300|1.20|8.00|12|Q1|



Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F††guidelines)||
|**Moisture Sensitivity Level**|PQFN 5mm x 6mm|MSL1<br>(per JEDEC J-STD-020D††)|
|**RoHS Compliant**|Yes||



- 

- † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product info/reliability †† Applicable version of JEDEC standard at the time of product release. 

## **Notes:** 

-   Repetitive rating;  pulse width limited by max. junction temperature. 

-    Starting TJ = 25°C, L = 0.20mH, RG = 50, IAS = 50A. 

-  Pulse width  400 µs; duty cycle  2%. 

- R is measured at TJ of approximately 90 °C. 

-   When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details: - - 

- http://www.irf.com/technical info/appnotes/an 994.pdf 

-   Calculated continuous current based on maximum allowable junction temperature. 

-  Current is limited to 100A by source bonding technology. 

## **Revision History** 

|**Revision History**||
|---|---|
|**Date**|**Comments**|
|4/30/2013|<br>Release of final data sheet.|
|5/17/2013|<br>Updated package 3D drawing, on page 1.<br><br>Added Continuous Drain Current limited by source bonding technology, on page 1.<br><br>Divided note 6 into note 6 & 7, on page 8.|
|8/14/2013|<br>Added“Fast_IR_FET™”above the partnumber, onpage1.|
|3/16/2015|<br>Updated package outline and tape and reel on pages 7 and 8.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

9 ~~lc~~ 

Submit Datasheet Feedback                   March 16, 2015 ~~_~~ 

9 www.irf.com © 2015 International Rectifier 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFH4210DTRPBF/power-mosfet-n-channel-25-v-44-a-1100-ohm-pqfn)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfh4210dtrpbf/mosfet-n-ch-25v-44a-pqfn-8/dp/2577196)
---

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