# Power MOSFET, N Channel, 30 V, 16 A, 7100 µohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:1734958/)

**URL**: https://novapart.co/products/IRFH3702TRPBF/power-mosfet-n-channel-30-v-16-a-7100-ohm-pqfn
**SKU**: IRFH3702TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6060
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0057ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.8W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PQFN |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 16A |
| Drain Source On State Resistance | 7100µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1734958/)

## IRFH3702PbF 

## **Applications** 

Synchronous Buck Converter for Computer Processor Power Isolated DC to DC Converters for Network and Telecom Buck Converters for Set-Top Boxes 

## HEXFET ® Power MOSFET 

|**VDSS**|**RDS(on) max**|**Qg**|
|---|---|---|
|**30V**|**7.1m**Ω**@VGS = 10V**|**9.6nC**|



## **Benefits** 

Low RDS(ON) 

Very Low Gate Charge Low Junction to PCB Thermal Resistance Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260°C Reflow) RoHS compliant (Halogen Free) 

3mm x 3mm PQFN 

## **Absolute Maximum Ratings** 

|~~Ce~~|**Parameter**<br>~~Ce~~|**Max.**<br>~~Ce~~|**Units**<br>~~Ce~~<br>~~XX~~|
|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~=~~|30<br>~~=~~|V<br>~~XX~~<br>~~=~~|
|VGS<br>~~———_——~~|Gate-to-Source Voltage<br>~~=~~<br>~~———_——~~|± 20<br>~~=~~<br>~~———_——~~||
|ID@ TA= 25°C<br>~~———_——~~|Continuous Drain Current, VGS@ 10V<br>~~LC~~<br>~~———_——~~|16<br>~~LC~~<br>~~———_——~~|A|
|ID@ TA= 70°C<br>~~a~~<br>~~———_——~~|Continuous Drain Current, VGS@ 10V<br>~~a~~<br>~~———_——~~|12<br>~~———_——~~||
|ID@ TC= 25°C<br>~~a~~<br>~~———_——~~|Continuous Drain Current, VGS@ 10V<br>~~a~~<br>~~———_——~~|42<br>~~———_——~~||
|ID@ TC= 25°C<br>~~a~~<br>~~———_——~~|Continuous Drain Current,VGS@ 10V(Package Limited)<br>~~a~~<br>~~a~~<br>~~———_——~~|25<br>~~a~~<br>~~———_——~~||
|IDM<br>~~———_——~~|Pulsed Drain Current<br>~~———_——~~|120<br>~~———_——~~||
|PD@TA= 25°C<br>~~———_——~~|Power Dissipation<br>~~———_——~~<br>~~ee~~|2.8<br>~~———_——~~<br>~~ee~~|W<br>~~ee~~|
|PD@TA= 70°C|Power Dissipation<br>~~ee~~|1.8<br>~~ee~~||
||Linear DeratingFactor|0.02<br>~~ee~~|W/°C<br>~~ee~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55  to + 150<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~|



## **Thermal Resistance** 

|~~a~~|**Parameter**<br>~~a~~|**Typ.**<br>~~a~~|**Max.**<br>~~a~~|**Units**|
|---|---|---|---|---|
|RθJC<br>~~a~~|Junction-to-Case<br>~~a~~<br>~~:~~|–––<br>~~a~~<br>~~:~~<br>~~LT~~|6.0<br>~~a~~<br>~~:~~<br>~~LT~~|°C/W<br>~~:~~<br>~~8~~|
|RθJA|Junction-to-Ambient<br>~~8~~|–––<br>~~8~~<br>~~LT~~|45<br>~~8~~<br>~~LT~~||
|RθJA|Junction-to-Ambient(t<10s)<br>~~a~~|–––<br>~~LT~~<br>~~a~~|44<br>~~LT~~<br>~~a~~||



## _ORDERING INFORMATION:_ 

_See detailed ordering and shipping information on the last page of this data sheet._ Notes ® through © are on page 10 www.irf.com 

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**Static @ TJ = 25°C (unless otherwise specified)** 

|~~pO~~|**Parameter**<br>~~Po~~<br>~~pO~~|**Min.**<br>~~Po~~|**Typ.**<br>~~Po~~<br>~~GO~~|**Max. **<br>~~Po~~<br>~~GO~~|**Units**<br>~~Po~~<br>~~QO~~|**Conditions**<br>~~Po~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~pO~~|Drain-to-Source Breakdown Voltage<br>~~Po~~<br>~~ss~~<br>~~pO~~|30<br>~~Po~~<br>~~ss~~|–––<br>~~Po~~<br>~~ss~~<br>~~GO~~|–––<br>~~Po~~<br>~~ss~~<br>~~GO~~|V<br>~~Po~~<br>~~ss~~<br>~~QO~~|VGS= 0V, ID= 250µA<br>~~Po~~<br>~~ss~~|
|∆ΒVDSS/∆TJ<br>~~pO~~|Breakdown Voltage Temp. Coefficient<br>~~pO~~|–––<br>~~a~~|0.02<br>~~GO~~|–––<br>~~GO~~<br>~~O~~|V/°C<br>~~QO~~<br>~~O~~|Reference to 25°C, ID= 1mA<br>~~OE~~|
|RDS(on)<br>~~pO~~<br>~~S~~|Static Drain-to-Source On-Resistance<br>~~pO~~<br>~~Se~~<br>~~Sn~~|–––<br>~~Se~~<br>~~a~~|5.7<br>~~GO~~<br>~~Se~~<br>~~ee~~|7.1<br>~~GO ~~<br>~~Se~~<br>~~O~~|mΩ<br> ~~QO~~<br>~~Se~~<br>~~O~~|VGS= 10V, ID= 16A<br>~~Se~~<br>~~OE~~<br>~~©~~|
|||–––<br>~~Se~~<br>~~a~~<br>~~n~~|8.7<br>~~Se~~<br>~~ee~~<br>~~n~~|11.8<br>~~Se~~<br>~~O~~||VGS= 4.5V, ID= 12A<br>~~Se~~<br>~~OE~~<br>~~©~~|
|VGS(th)<br>~~S~~|Gate Threshold Voltage<br>~~Se~~<br>~~Sn~~|1.35<br>~~Se~~<br>~~a~~<br>~~n~~|1.8<br>~~Se~~<br>~~ee~~<br>~~n~~|2.35<br>~~Se~~<br>~~O~~|V<br>~~Se~~<br>~~O~~|VDS= VGS, ID= 25µA<br>~~Se~~<br>~~OE~~<br>~~©~~<br>~~a~~|
|∆VGS(th)<br>~~S~~|Gate Threshold Voltage Coefficient<br>~~Sn~~<br>~~a~~|–––<br>~~n~~<br>~~a~~|-6.5<br>~~n~~<br>~~a~~|–––<br>~~a~~|mV/°C<br>~~a~~||
|IDSS<br>~~S~~|Drain-to-Source Leakage Current<br>~~Sn~~<br>~~a~~<br>~~|~~|–––<br>~~n~~<br>~~a~~<br>~~|~~|–––<br>~~n~~<br>~~a~~<br>~~|~~|1.0<br>~~a~~<br>~~|~~|µA<br>~~a~~<br>~~|~~|VDS= 24V, VGS= 0V<br>~~a~~<br>~~|~~|
|||–––<br>~~|~~<br>~~a~~|–––<br>~~|~~|150<br>~~|~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~|~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~——~~|–––<br>~~——~~|–––<br>~~——~~|100<br>~~——~~|nA<br>~~——~~<br>~~QO~~|VGS= 20V<br>~~——~~|
||Gate-to-Source Reverse Leakage<br>~~——~~|–––<br>~~——~~<br>~~a~~|–––<br>~~——~~<br>~~GO~~|-100<br>~~——~~<br>~~GO~~||VGS= -20V<br>~~——~~|
|gfs|Forward Transconductance<br>~~——~~<br>~~ss~~|37<br>~~——~~<br>~~a~~<br>~~ss~~|–––<br>~~——~~<br>~~ss~~<br>~~GO~~|–––<br>~~——~~<br>~~ss~~<br>~~GO~~|S<br>~~——~~<br>~~ss~~<br>~~QO~~|VDS= 15V, ID= 12A<br>~~——~~<br>~~ss~~|
|Qg|Total Gate Charge<br>~~a~~|–––<br>~~a~~|9.6<br>~~GO~~<br>~~a~~|14<br>~~GO~~<br>~~a~~|nC<br>~~QO~~|See Fig.17 & 18<br>VGS= 4.5V<br>ID= 12A<br>VDS= 15V|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~|2.4<br>~~es~~|–––<br>~~es~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|1.2<br>~~ee~~|–––<br>~~ee~~|||
|Qgd|Gate-to-Drain Charge<br>~~es~~|–––<br>~~es~~|3.1<br>~~es~~|–––<br>~~es~~|||
|Qgodr|Gate Charge Overdrive<br>~~ee~~|–––<br>~~ee~~<br>~~es~~|2.9<br>~~ee~~|–––<br>~~ee~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~ee~~|–––<br>~~ee~~<br>~~es~~|4.3<br>~~ee~~|–––<br>~~ee~~|||
|Qoss|Output Charge<br>~~OO~~|–––<br>~~es~~<br>~~OO~~|7.4<br>~~OO~~|–––<br>~~OO~~<br>~~GO~~|nC<br>~~OO~~<br>~~GO~~|VDS= 16V, VGS= 0V<br>~~OO~~|
|RG|Gate Resistance<br>~~ss~~|–––<br>~~ss~~|2.2<br>~~ss~~|–––<br>~~ss~~<br>~~GO~~|Ω<br>~~ss~~<br>~~GO~~|~~ss~~|
|td(on)|Turn-On DelayTime<br>~~es~~|–––<br>~~es~~|9.6<br>~~es~~|–––<br>~~GO~~<br>~~es~~|ns<br>~~GO~~|RG=1.8Ω<br>VDD= 15V, VGS= 4.5V<br>ID= 12A<br>See Fig.15|
|tr|Rise Time<br>~~ee~~|–––<br>~~ee~~|15<br>~~ee~~|–––<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~|11<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~ee~~|5.8<br>~~ee~~|–––<br>~~ee~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~es~~|1510<br>~~es~~|–––<br>~~es~~|pF|VGS= 0V<br>VDS= 15V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|306<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|120<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||



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1000 1000<br>≤ 60µs PULSE WIDTH TOP           VGS10V ≤ 60µs PULSE WIDTH TOP           VGS10V<br>Tj = 25°C 5.0V Tj = 150°C 5.0V<br>4.5V 4.5V<br>a 3.5V ee 3.5V<br>3.3V 3.3V<br>3.1V 3.1V<br>100 2.9V 100 2.9V<br>BOTTOM 2.7V BOTTOM 2.7V<br>SY fe fr<br>QP L o<br>10 10 2.7V<br>ZC At hth<br>2.7V<br>1 seatLN iiammaill anu 1 a 7 Nl<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 2.0<br>ID = 16A<br>VGS = 10V<br>100<br>> = BRRnEpa<br>1.5<br>oper<br>ee, 7 A<br>10 TJ = 150°C<br>eeff / aoe| __ ee e eepa<br>ee ey TJ = 25°C | 1.0 wa<br>1<br>Ss L T<br>VDS = 15V<br>aie ≤ 60µs PULSE WIDTH<br>0.1 0.5<br>1 2 3 4 5 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

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100000 14.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED ID= 12A<br>C  = C 12.0<br>rss   gd<br>| T | Coss   = C _] ds + Cgd G VDS= 24V o<br>10.0<br>10000 VDS= 15V<br>8.0<br>Ciss 6.0<br>EE E Et ( i iF |<br>1000<br>e ee C ULE<br>4.0<br>Coss<br>2.0<br>C<br>rss<br>S o<br>100 i 0.0<br>1 10 100 0 5 10 15 20 25 30<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>100 100<br>100µ secc<br>T = 150°C 10msec<br>J<br>10 10<br>TJ = 25°C 1m see c<br>1 1<br>TA = 25°CA = 25°C = 25°C<br>Tj = 150°C<br>VGS = 0V Single Pulse<br>0.1 0.1<br>pf f niinbalbal<br>0.2 0.4 0.6 0.8 1.0 1.2 0 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>100<br>100µ secc<br>10msec<br>10<br>1m see c<br>1<br>TA = 25°CA = 25°C = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.1<br>niinbalbal<br>0 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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TER Rectifier<br>16 2.5<br>LEE<br>14 I N PP tL<br>12 P oINE | 2.0 P AE EEEEL<br>10<br>N ee PT NEE<br>ID = 25µA<br>8 P et | KA | 1.5 P Et NEL<br>6<br>P f | TN et ELAN<br>4 1.0<br>P o KN P itt} | yt IN<br>20 |P f | ft | | ft lt UN 0.5 P PEt T TTEL E LLL Tt LS<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br> TA , Ambient Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Threshold Voltage Vs. Temperature<br>Ambient Temperature<br>100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 0.02<br>0.01<br>0.1<br>0.01 Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>Sa t i ( THERMAL RESPONSE ) S nimineSr a 2. Peak Tj = P dm x Zthja + T ad A<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>VGS(th), Gate Threshold Voltage (V)<br>Thermal Response ( Z thJA ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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20 350<br>ID = 16A ID<br>18<br>300 TOP         1.7A<br>2.6A<br>pep G ana<br>16<br>PTR ELL 250 N aa BOTTOM 12A<br>14<br>PER EEE LLL LI 200 P AT TT<br>12<br>pect M EE<br>150<br>10 PLANE EET LL < hk<br>TJ = 125°C<br>100<br>8 CORPSE S IA TET<br>T = 25°C<br>J<br>6 50<br>PNET p ee NGREEE<br>4 PELL ETE 0 Pi | |SSS<br>0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>)  Ω<br>RDS(on),  Drain-to -Source On Resistance (m EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


VGS, Gate -to -Source Voltage  (V) 

**Fig 12.** On-Resistance vs. Gate Voltage 

**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>y 20V ait<br>tp 0.01 Ω<br>**----- End of picture text -----**<br>


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 1<br> 0.1<br>**----- End of picture text -----**<br>


**Fig 14a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>tp<br>/ | \<br>IAS<br>**----- End of picture text -----**<br>


**Fig 14b.** Unclamped Inductive Waveforms 

**Fig 15a.** Switching Time Test Circuit 

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V<br>DS<br>90%<br>10%<br>V<br>GS<br>ok<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 15b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + Period — D = ——<br>+ P.W. Period<br>) [©)] Circuit    • Layout Considerations V |t GS=10<br>| — - •  LowGroundStray Inductance Plane<br>•  owLeakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [1] Current Transformer - ® + Current r Current di/dt AN<br>©) D.U.T. VDS Waveform Diode Recoverydv/dt ‘ '<br>00 we VDD<br>•  Re-Applied<br>Re ( 4 • •  spvidtriversame controlledcontrolledtype as by by DutyRgD.U.T. Factor"D" Vop +- Voltage @) Inductor Curent Body Diode  Forward Drop av<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 16.** 

## or N-Channel 

## HEXFET ® ower MOSFETs 

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Id<br>Vds<br>Vgs<br>|<br>1<br>1<br>i<br>Vgs(th)<br>' 1<br>\ \<br>><>4+ _ _»>'4+______><br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


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Current Regulator<br>F Same Type e as D.U.T. Vds<br>|<br>|<br>|<br>|<br>| 50K Ω |<br>|<br>| 12V .2 µ F |<br>.3 µ F<br>+<br>b+ —+__1____ | D.U.T. -VDS<br>Vgs(th)<br>VGS<br>3mA<br>VIN - t [N\/\/\-] ><>4+<br>IG ID Qgs1<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 17.** Gate Charge Test Circuit 

## **Fig 18.** Gate Charge Waveform 

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## **PQFN Package Details** 

**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

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## **PQFN Part Marking** 

## **PQFN Tape and Reel** 

**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

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|||||
|---|---|---|---|
|Orderable part number|Package Type|Standard Pack|Note|
|Form|Quantity|
|IRFH3702TRPBF|PQFN 3mm x 3mm|Tape and Reel|4000|

**----- End of picture text -----**<br>


**Qualification information**[†] 

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||||
|---|---|---|
|Consumer††|
|Qualification level|
|(per JEDEC JES D47F|††† guidelines )|
|MS L1|
|Moisture Sensitivity Level|PQFN 3mm x 3mm|(per IPC/JEDEC J-S T D-020D††† )|
|RoHS compliant|Yes|

**----- End of picture text -----**<br>


. Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability to Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Hho Applicable version of JEDEC standard at the time of product release. 

**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.0mH, RG = 25 Ω , IAS = 12A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rthjc is guaranteed by design. 

When mounted on 1 inch square  2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Refer to application note #AN-994. 

Data and specifications subject to change without notice 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2010 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFH3702TRPBF/power-mosfet-n-channel-30-v-16-a-7100-ohm-pqfn)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfh3702trpbf/mosfet-n-ch-30v-16a-pqfn/dp/1734958)
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