# Power MOSFET, HEXFET, N Channel, 75 V, 76 A, 8400 µohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2456725/)

**URL**: https://novapart.co/products/IRFB7787PBF/power-mosfet-hexfet-n-channel-75-v-76-a-8400-ohm
**SKU**: IRFB7787PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0300
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0084ohm; Rds(on) Test Voltag; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 125W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 76A |
| Drain Source On State Resistance | 8400µohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2456725/)

Strong _IR_ FET™ IRFB7787PbF IRFS7787PbF IRFSL7787PbF 

## International 

## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

-  Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC Inverters 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free, RoHS Compliant 

HEXFET[® ] Power MOSFET 

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D VDSS  75V<br>RDS(on) typ. 6.9m <br>G<br>            max  8.4m <br>S ID   76A<br>==<br>D  D<br>S<br>D  S  S<br>G  G<br>G  [D ]<br>TO-220AB  D [2] Pak  TO-262<br>IRFB7787PbF  IRFS7787PbF  IRFSL7787PbF<br>G  D  S<br>Gate  Drain  Source<br>E><br>**----- End of picture text -----**<br>


|**Base part number**|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|---|
||||**Form**|**Quantity**||
|IRFB7787PbF||TO-220|Tube|50|IRFB7787PbF|
|IRFSL7787PbF||TO-262|Tube|50|IRFSL7787PbF|
|IRFS7787PbF|IRFS7787PbF|D2-Pak|Tube|50|IRFS7787PbF|
||||Tape and Reel Left|800|IRFS7787TRLPbF|
|0<br>20<br>40<br>60<br>80<br>ID  , Drain Current (A)<br>0<br>10<br>20<br>30<br>40<br>RDS(on),  Drain-to -Source On Resistance ( m)<br>T<br>J<br>= 25°C<br>T<br>J<br>= 125°C<br>I<br>D<br>= 46A<br>~~NF ft~~<br>~~PPS.~~<br>~~HY~~<br>~~EPPS~~<br>~~EEE~~<br>~~HEE PN~~<br>~~PO~~<br>~~PEt~~<br>~~YPTA~~||||||



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80<br>NF ft<br>60<br>40 EPPS<br>PPS.<br>20<br>HEE PN<br>0 PEtYP TA<br>25 50 75 100 125 150 175<br>TC , CaseTemperature (°C)<br>ID  , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

1 ~~—~~ 

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IRFB/S/SL7787PbF ~~Pe~~ 

## ~~IsaR~~ 

## **Absolute Maximum Rating** 

||**Symbol**|**Parameter**||**Max.**|**Max.**|**Units**|
|---|---|---|---|---|---|---|
||ID @TC= 25°C|Continuous Drain Current,VGS @10V||76|76||
||ID @TC= 100°C|Continuous Drain Current,VGS @10V||54|54|A|
||IDM|Pulsed Drain Current||280|||
||PD @TC= 25°C|Maximum Power Dissipation||125||W|
|||Linear DeratingFactor||0.83||W/°C|
||VGS|Gate-to-Source Voltage||± 20||V|
||TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|-55  to + 175||°C|
|||SolderingTemperature,for 10 seconds(1.6mm from case)||300|||
|||Mounting Torque, 6-32 or M3 Screw|10 lbf·in (1.1 N·m)||||
||**Avalanche Characteristics**||||||
|EAS(Thermallylimited)<br>SinglePulseAvalancheEnergy <br>144<br>mJ<br>EAS (Thermally limited)<br>SinglePulseAvalancheEnergy <br>209<br>IAR<br>Avalanche Current<br>See Fig 15, 16, 23a, 23b<br>A<br>EAR<br>Repetitive Avalanche Energy <br>mJ<br>**Thermal Resistance**<br> **Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>~~—SS=~~<br>~~=~~|||||||
||RJC|Junction-to-Case|–––||1.2||
||RCS|Case-to-Sink,Flat Greased Surface|0.50||–––|°C/W|
||RJA|Junction-to-Ambient|–––||62||



## **Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min. Typ. Max. Units**|**Min. Typ. Max. Units**|**Min. Typ. Max. Units**|**Min. Typ. Max. Units**|**Min. Typ. Max. Units**<br>**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|75|–––|–––|V|VGS= 0V,ID= 250µA|
|V(BR)DSS/TJ|JBreakdown Voltage Temp. Coefficient|–––|0.06|–––|V/°C Reference to 25°C|V/°C Reference to 25°C,ID= 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|6.9|8.4|m|VGS= 10V,ID= 46A|
|||–––|8.2|–––||VGS= 6.0V,ID= 23A|
|VGS(th)|GateThresholdVoltage|2.1|–––|3.7|V|VDS= VGS,ID= 100µA|
|GS(th)<br>IDSS|Drain-to-Source Leakage Current|–––|–––|1.0|µA|VDS= 75V,VGS=0V|
|||–––|–––|150||VDS= 75V,VGS=0V,TJ=125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -20V|
|RG|Gate Resistance|–––|2.1|–––|||



## **Notes:** 

-  Repetitive rating; pulse width limited by max. junction temperature. 

-  Limited by TJmax, starting TJ = 25°C, L = 0.138mH, RG = 50, IAS = 46A, VGS =10V. 

-  ISD  46A, di/dt  425A/µs, VDD  V(BR)DSS, TJ  175°C. 

-  Pulse width  400µs; duty cycle  2%. 

-  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

-  R is measured at TJ approximately 90°C. 

-    Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 20A, VGS =10V. 

-  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf 

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## ~~IsaR~~ 

## IRFB/S/SL7787PbF ~~Pe~~ 

**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~a~~|**Parameter**|**Min.**|**Typ. **|**Max. Units**|**Max. Units**|**Max. Units**<br>**Conditions**|
|---|---|---|---|---|---|---|
|gfs<br>~~a~~|Forward Transconductance|154|–––|–––|S|VDS= 10V,ID=46A|
|Qg<br>~~a~~|Total Gate Charge|–––|73|109|nC|ID= 46A<br>VDS= 38V<br>VGS= 10V|
|Qgs|Gate-to-Source Charge|–––|18|–––|||
|Qgd<br>~~a~~|Gate-to-Drain Charge|–––|23|–––|||
|Qsync<br>~~a~~|Total Gate Charge Sync.(Qg–Qgd)|–––|50|–––|||
|td(on)<br>~~a~~|Turn-On DelayTime|–––|11|–––|ns|VDD= 38V<br>ID= 46A<br>RG= 2.7<br>VGS= 10V<br>~~ee~~|
|tr<br>~~a~~|Rise Time<br>|–––<br>|48<br>|–––<br>|||
|td(off)<br>|Turn-Off DelayTime<br>|–––<br>|51<br>|–––<br>|||
|tf<br>~~So~~<br>~~i~~|Fall Time<br>~~So~~|–––<br>~~So~~|39<br>~~So~~|–––<br>~~So~~|||
|Ciss<br>~~So~~<br>~~i~~|Input Capacitance<br>~~So~~|–––<br>~~So~~|4020<br>~~So~~|–––<br>~~So~~|pF<br>|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7<br>~~ee~~|
|Coss<br>~~i~~|Output Capacitance|–––|330|–––|||
|Crss<br>~~i~~<br>~~Pa~~|Reverse Transfer Capacitance|–––|205|–––|||
|Coss eff.(ER)<br>~~i~~<br>~~Pa~~|Effective Output Capacitance<br>(EnergyRelated)|–––|295|–––||VGS= 0V, VDS = 0V to 60V<br>~~ee~~|
|Coss eff.(TR)<br>~~Pa~~<br>~~a~~|Output Capacitance(Time Related)<br>|–––<br>|380<br>|–––<br>||VGS= 0V,VDS = 0V to 60V<br>|
|**Diode Characteristics**<br>|||||||
|**Symbol**<br>~~DO~~<br>~~SSS~~|**Parameter**<br>~~DO~~<br>~~SSS~~|**Min.**<br>~~DO~~<br>~~SSS~~|**Typ.**<br>~~DO~~|**Max. Units**<br>~~DO~~|**Max. Units**<br>~~DO~~|**Max. Units**<br>**Conditions**<br>~~DO~~<br>~~ee~~|
|IS<br>~~SSS~~|Continuous Source Current<br>(BodyDiode)<br>~~SSS~~|–––<br>~~SSS~~|–––|76|A|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.<br>D<br>S<br>G<br>~~ee~~|
|ISM<br>~~SSS~~|Pulsed Source Current<br>(BodyDiode)<br>~~SSS~~|–––<br>~~SSS~~|–––|280|||
|VSD<br>~~SSS~~<br>~~a~~|Diode Forward Voltage<br>~~SSS~~|–––<br>~~SSS~~|–––|1.2|V|TJ= 25°C,IS= 46A,VGS= 0V<br>~~ee~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>|–––<br>|10<br>|–––<br>|V/ns T<br>|V/ns TJ= 175°C,IS=46A,VDS= 75V|
|trr<br>~~ee~~|Reverse Recovery Time<br>~~ee~~|–––<br>~~ee~~|33<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~|TJ =25°CVDD= 64V<br>TJ =125°CIF= 46A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~ee~~|39<br>~~ee~~|–––<br>~~ee~~|||
|Qrr<br>~~ee~~<br>~~a eee~~|Reverse Recovery Charge<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|42<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|nC<br>~~ee~~<br>~~eee~~||
|||–––<br>~~eee~~|61<br>~~eee~~|–––<br>~~eee~~|||
|IRRM<br>~~a eee~~<br>~~a~~|ReverseRecovery Current<br>~~eee~~|–––<br>~~eee~~|2.2<br>~~eee~~|–––<br>~~eee~~|A<br>~~eee~~||



3 ~~—~~ 

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1000<br>VGS<br>TOP           15V<br>a ee a ee ee | 10V<br>8.0V<br>7.0V<br>6.0V<br>100 5.5V<br>Baila<br>5.0V<br>10 Fpberm enllLl BOTTOM 4.5V<br>4.5V<br> 60µs PULSE WIDTH<br>Tj = 25°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics<br>1000<br>Pf ff<br>100<br>T = 175°C<br>J<br>10 2a<br>pf ifbe TJ = 25°C<br>1<br>VDS = 25V<br> 60µs PULSE WIDTH<br>0.1 | f| 6<br>2.0 3.0 4.0 5.0 6.0 7.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Output Characteristics 

**Fig 5.** Typical Transfer Characteristics 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>Crss   = Cgd<br>Coss  = Cds + Cgd<br>Ff<br>10000<br>Coe ooo<br>a a a es Ciss eee<br>1000<br>Coss<br>PSS EH<br>Crss<br>100 LI RE<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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1000<br>VGS<br>TOP           15V10V a ee<br>8.0V<br>7.0V<br>6.0V ZA<br>100 5.5V ieee el<br>5.0V<br>BOTTOM 4.5V<br>4.5V<br>10 e r ett iiltalil<br>  60µs PULSE WIDTH<br>Tj = 175°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>2.5<br>ID = 46A<br>VGS = 10V<br>2.0<br>1.5<br>1.0<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

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14<br>ID= 46A VDS= 60V<br>12<br>VDS= 38V<br>10 ao V DS=  15V ye<br>VA.<br>86 ro Lf |<br>4<br>2 VAR<br>0 Am<br>0 20 40 60 80 100<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 4 www.irf.com © 2015 International Rectifier ~~ss ©~~ 

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1000 eePt ee ee ee<br>ee<br>100<br>po | | | jy) |<br>°<br>T = 175 C | |<br>Pi J  / [As] /<br>10<br>T = 25°C<br>J<br>1<br>V GS  = 0V<br>0.1 P P Rpe<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

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95<br>Id = 1.0mA<br>90<br>8580 UALLEEVe yan<br>75<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Temperature ( °C )<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


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prndede tit teenge [te][r] 100µsec [ete]<br>100 ttt<br>eePetPT TTL<br>1msec<br>10 eCEtNpA<br>OPERATION IN THIS AREA  1 0msec<br>LIMITED BY RDS(on)<br>1<br>Tc = 25°C<br>Tj = 175 ° C DC<br>Single Pulse<br>0.1 Se“Ht<br>0.1 1 10<br>VDS,  Drain-toSource Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>0.8<br>0.6<br>0.4 /<br>0.2 ALaaa<br>0.0 pZdGnnne KO<br>0 10 20 30 40 50 60 70 80<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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30.0<br>VGS = 5.5V<br>VGS = 6.0V<br>25.0 V GS  = 7.0V<br>VGS = 8.0V<br>20.0 V GS  = 10V<br>15.010.0 BN\waBuTZi<br>5.0<br>0 40 80 120 160<br>ID, Drain Current (A)<br>)<br><br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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10<br>PAH ENEH<br>1<br>Sai D = 0.50 el seo smd oat<br>0.20<br>0.1 0.10<br>0.05<br>—— 0.01 0.02 ><br>0.01<br>rail | meme | Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthjc + Tc<br>Zaae<br>0.001<br>1E-006 Ti 1E-005 soul 0.0001 EE 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>SN<br>10<br>HHH PAETT<br>NeA<br>ee ee ee ee eee ee ee<br>PEI STI to<br>1 aTe<br>i Allowed avalanche Current vs avalanche  TA RSHy<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 150 ° C. (Single Pulse)<br>PETSrrr eee | |  ste|<br>PPE<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.  Avalanche Current vs. Pulse Width<br>160<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>140 BOTTOM   1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>ID = 46A 1.Avalanche failures assumption:<br>120 NL Purely a thermal phenomenon and failure occurs at a<br>| temperature far in excess of Tjmaxjmax. This is validated for every<br>100 part type.<br>NEEL 2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not<br>80 PINDNUE LL    exceeded.<br>3. Equation below based on circuit and waveforms shown in Figures<br>60     23a, 23b.<br>LENIN 4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>40 CLE ANEN E LEL 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br> increase during avalanche).<br>20 6. Iav = Allowable avalanche current.<br>7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax<br>PUTTS.NSN     (assumed as 25°C in Figure 15, 16).<br>0<br>tav = Average time in avalanche.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see Figures 14) thJC(D, tav) = Transient thermal resistance, see Figures 14) (D, tav) = Transient thermal resistance, see Figures 14) av) = Transient thermal resistance, see Figures 14) ) = Transient thermal resistance, see Figures 14)<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmaxjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 14) thJC(D, tav) = Transient thermal resistance, see Figures 14) (D, tav) = Transient thermal resistance, see Figures 14) av) = Transient thermal resistance, see Figures 14) ) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] 

      - EAS (AR) = PD (ave)·tav 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

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4.0<br>3.5<br>3.0 ar ae<br>2.5 ID = 100µA<br>ID = 250µA<br>2.0 I D = 1.0mA<br>ID = 1.0A NG<br>1.5<br>1.0 PEEEELELNS<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

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16<br>IF = 46A<br>VR = 64V<br>12 T J = 25°C<br>TJ = 125°C<br>8<br>4<br>0<br>0 200 400 600 800<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


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16<br>IF = 30A<br>VR = 64V<br>12 T J = 25°C<br>TJ = 125°C aa<br>8<br>4 a<br>0 71 tL<br>0 200 400 600 800<br>diF /dt (A/µs)<br>Fig 18.   Typical Recovery Current vs. dif/dt<br>250<br>IF = 30A<br>VR = 64V<br>200<br>T J  = 25°C<br>TJ = 125°C<br>150<br>100<br>50<br>0<br>0 200 400 600 800<br>diF /dt ( A/µs)<br>QRR (nC)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

**==> picture [212 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
250<br>IF = 46A<br>VR = 64V<br>200<br>T J  = 25°C<br>TJ = 125°C<br>150<br>100<br>50<br>as<br>0<br>0 200 400 600 800<br>diF /dt ( A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback                   April 22, 2015 ~~z=~~ °”..©..}.”©6€7 ~~a OT~~ 

IéaRy|| 

IRFB/S/SL7787PbF 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

**==> picture [156 x 86] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>VD S L D R IVE R<br>R G D .U .T +<br>- [V][D D]<br>IA S<br>20V<br>tp 0.01 <br>**----- End of picture text -----**<br>


**==> picture [16 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
I A S<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V (B R )D S S<br>tp<br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

**==> picture [21 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

**==> picture [171 x 117] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th) A |H |'<br>Q gs1 Q gs2 Q gd Q godr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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IRFB/S/SL7787PbF 

## **TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

E X A M P L E : T H IS IS A N IR F 1 0 1 0 L O T  C O D E 1 7 8 9 A S S E M B L E D O N W W 1 9 , 2 0 0 0 IN T H E A S S E M B L Y  L IN E "C " 

N o t e :  "P " in a s s e m b ly  lin e  p o s it io n in d ic a t e s  "L e a d -  F r e e " 

**==> picture [251 x 83] intentionally omitted <==**

**----- Start of picture text -----**<br>
P A R T  N U M B E R<br>IN T E R N A T IO N A L<br>R E C T IF IE R<br>I RF 1010 77.<br>L O G O<br>~ —P LEAR 019C +,<br>D A T E  C O D E<br>qi<br>Y E A R  0  =  2 0 0 0<br>A S S E M B L Y<br>W E E K  1 9<br>L O T  C O D E<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRFB/S/SL7787PbF 

## IéaRwap 

## **TO-262 Package Outline** (Dimensions are shown in millimeters (inches) 

## **TO-262 Part Marking Information** 

**==> picture [370 x 246] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>INTERNATIONAL<br>ASSEMBLED ON WW 19, 1997<br>RECTIFIER<br>IN THE ASSEMBLY LINE "C" LOGO | c IRL3103L S 7]<br>70R 7T19C te DATE CODE<br>A l7__89<br>YEAR 7 = 1997<br>No te : "P”indicain t assemblyes "Lead line — F ree”posi t ion ASSEMBLYLOT CODE | { WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER<br>LOGO | IRL3 103L |<br>j7eR P719A +p DATE CODE<br>P = DESIGNATES LEAD-FREE<br>ASSEMBLY<br>A lz | 39<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 = 1997<br>WEEK 19<br>A = ASSEMBLY SITE CODE<br>| | |<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRFB/S/SL7787PbF 

## **D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D[2] Pak (TO-263AB) Part Marking Information** 

**==> picture [296 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL<br>——~,<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO TEIR 0021 ne<br>y, 80 24 DATE CODEYEAR 0 =  2000<br>ASSEMBLY WU<br>assembly line position LOT CODE Lf Vf WEEK 02<br>t es “Lead — F ree” u u LINE L<br>OR<br>INTERNATIONAL (ve e ~ PART NUMBER<br>RECTIFIER F530S<br>LOGO TEAR  P 00 24 DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>ASSEMBLY “ a 80 T OT ] 24 PRODUCT (OPTIONAL)<br>LOT CODE yo OY YEAR 0 =  2000<br>U U WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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11 

IRFB/S/SL7787PbF ~~Pp~~ 

## wy ~~IsaR~~ 

**D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [20 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>**----- End of picture text -----**<br>


**==> picture [517 x 439] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.60 (.063)<br>1.50 (.059)<br>.| 4.10 (.161) ::; : 1.60 (.063)1.50 (.059)<br>3.90 (.153) 0.368 (.0145)<br>=; 0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) \a fe \ 11.40 (.449) 15.42 (.609) 24.30 (.957)23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>LZ\<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>/‘ \\ // \\ \<br>330.00<br>60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>\ \ / \ / / i<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE.<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-220|N/A|
||D2Pak|MSL1<br>(per JEDEC J-STD-020D††)|
||TO-262||
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site:  http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

|**Date**|**Comment**|
|---|---|
|03/05/2015|Updated EAS (L =1mH)= 209mJ  on page 2<br>Updated note 9  “Limited by TJmax, starting TJ= 25°C, L = 1mH, RG= 50, IAS= 20A, VGS=10V” on page 2<br>Updated package outline on page 9,10,11.|
|04/21/15|<br>Updated Vsd curve  Fig 9 on page 5|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFB7787PBF/power-mosfet-hexfet-n-channel-75-v-76-a-8400-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfb7787pbf/mosfet-n-ch-75v-76a-to-220ab-3/dp/2456725)
---

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