# Power MOSFET, N Channel, 75 V, 85 A, 7300 µohm, TO-2220, Through Hole

![Product image](https://novapart.co/image/farnell:2456722/)

**URL**: https://novapart.co/products/IRFB7740PBF/power-mosfet-n-channel-75-v-85-a-7300-ohm-to-2220
**SKU**: IRFB7740PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4490
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 143mW |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-2220 |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 85A |
| Drain Source On State Resistance | 7300µohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2456722/)

## ~~torRecifier~~ 

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Strong IR FET™<br>    IRFB7740PbF<br>torRecifier  _—«ss— ($< |<br>Application  HEXFET [® ] Power MOSFET<br> Brushed Motor drive applications<br> BLDC Motor drive applications  D VDSS  75V<br>Battery powered circuits<br> Half-bridge and full-bridge topologies   RDS(on) typ. 6.0m <br> Synchronous rectifier applications  G             max  7.3m <br> Resonant mode power supplies<br>S<br> OR-ing and redundant power switches  ID   87A<br>==<br> DC/DC and AC/DC converters<br> DC/AC Inverters<br>Benefits  S<br>D<br> Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness  G<br> Fully Characterized Capacitance and Avalanche SOA<br> Enhanced body diode dV/dt and dI/dt Capability    TO-220AB<br> Lead-Free, RoHS Compliant  IRFB7740PbF<br>G  D  S<br>Gate  Drain  Source<br>-——|—}—_<br>**----- End of picture text -----**<br>


|**Base part number**|**Package Type**|**Standard Pack**<br>**Form**|**Standard Pack**<br>**Quantity**|**Orderable Part Number**|
|---|---|---|---|---|
|IRFB7740PbF|TO-220|Tube|50|IRFB7740PbF|



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30<br>ID = 52A<br>25 TLL...<br>20<br>TLL<br>15<br>TJ = 125°C<br>Lanne<br>10 )22aer<br>5 ACERS<br>TJ = 25°C<br>0<br>PEE<br>4 8 12 16 20<br>VGS, Gate-to-Source Voltage (V)<br>)<br><br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


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100<br>80 Gate<br>60 PST<br>40 TTS<br>~<br>20 EEEEAN<br>0 ttt LIN<br>25 50 75 100 125 150 175<br>TC , CaseTemperature (°C)<br>ID  , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

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IRFB7740PbF 

## **Absolute Maximum Rating** 

||**Symbol**|**Parameter**|**Max.**|**Max.**|**Units**|
|---|---|---|---|---|---|
||ID @TC= 25°C|Continuous Drain Current,VGS @10V|87|87||
||ID @TC= 100°C|Continuous Drain Current,VGS @10V|62|62|A|
||IDM|Pulsed Drain Current|275|||
||PD @TC= 25°C|Maximum Power Dissipation|143||W|
|||Linear DeratingFactor|0.95||W/°C|
||VGS|Gate-to-Source Voltage|± 20||V|
||TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175||°C|
|||Soldering Temperature, for 10 seconds (1.6mm from case)|300|||
|||MountingTorque, 6-32 or M3 Screw|10 lbf·in(1.1 N·m)|||
||**Avalanche Characteristics**|||||
|EAS (Thermally limited)<br>SinglePulseAvalancheEnergy <br>160<br>mJ<br>EAS (Thermally limited)<br>Single Pulse Avalanche Energy<br>241<br>IAR<br>Avalanche Current<br>See Fig. 15, 16, 23a, 23b<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>**Thermal Resistance**<br> **Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>~~—SSSS=EE~~||||||
||RJC|Junction-to-Case|–––|1.05||
||RCS|Case-to-Sink,Flat Greased Surface|0.50|–––|°C/W|
||RJA|Junction-to-Ambient<br>–––||62||



## **Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min.**|**Typ. Max. Units**|**Typ. Max. Units**|**Typ. Max. Units**|**Typ. Max. Units**<br>**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|75|–––|–––|V|VGS= 0V,ID= 250µA|
|V(BR)DSS/TJ|JBreakdown Voltage Temp. Coefficient|–––|0.05|–––|V/°C Reference to 25°C|V/°C Reference to 25°C,ID= 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|6.0|7.3|m|VGS= 10V,ID= 52A|
|||–––|7.1|–––||VGS= 6.0V,ID= 26A|
|VGS(th)|GateThresholdVoltage|2.1|–––|3.7|V|VDS= VGS,ID= 100µA|
|GS(th)<br>IDSS|Drain-to-Source Leakage Current|–––|–––|1.0|µA|VDS =75 V, VGS =0V|
|||–––|–––|150||VDS=75V,VGS=0V,TJ=125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 20V|
||Gate-to-SourceReverseLeakage|–––|–––|-100||VGS= -20V|
|RG|Gate Resistance|–––|2.0|–––|||



## **Notes:** 

- Repetitive rating; pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 0.117mH, RG = 50, IAS = 52A, VGS =10V. 

- ISD  52A, di/dt  503A/µs, VDD  V(BR)DSS, TJ 175°C. 

- Pulse width  400µs; duty cycle  2%. 

-  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

-  R is measured at TJ approximately 90°C. 

-  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 22A, VGS =10V. 

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2 

~~IVR~~ 

IRFB7740PbF ~~SS~~ 

## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~es~~<br>~~a~~|**Parameter**<br>~~es~~|**Min.**<br>~~es~~|**Typ. **<br>~~es~~|**Max. Units**<br>~~es~~<br>~~OO~~|**Max. Units**<br>~~es~~<br>~~OO~~|**Max. Units**<br>**Conditions**<br>~~es~~|
|---|---|---|---|---|---|---|
|gfs<br>~~a~~|Forward Transconductance|167|–––|–––<br>~~OO~~|S<br>~~OO~~|VDS= 10V,ID=52A|
|Qg<br>~~a~~|Total Gate Charge|–––|81|122|nC|ID= 52A<br>VDS= 38V<br>VGS= 10V|
|Qgs|Gate-to-Source Charge|–––|21|–––|||
|Qgd<br>~~a~~<br>~~es~~|Gate-to-Drain Charge|–––|27|–––|||
|Qsync<br>~~a~~<br>~~es~~<br>~~es~~|Total Gate Charge Sync.(Qg–Qgd)|–––|54|–––|||
|td(on)<br>~~es~~<br>~~es~~<br>~~ee~~|Turn-On DelayTime<br>~~ee~~|–––<br>~~ee~~|12<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 38V<br>ID= 52A<br>RG= 2.7<br>VGS= 10V<br>~~ee~~|
|tr<br>~~es~~<br>~~ee~~|Rise Time<br>~~ee~~|–––<br>~~ee~~|60<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~ee~~|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~|55<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~es~~<br>~~a~~|Fall Time|–––|45|–––|||
|Ciss<br>~~es~~<br>~~a~~|Input Capacitance|–––|4650|–––|pF<br>~~es~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7<br>~~ee~~|
|Coss<br>~~es~~<br>~~a~~|Output Capacitance|–––|370|–––|||
|Crss<br>~~a~~|Reverse Transfer Capacitance|–––|240|–––|||
|Coss eff.(ER)<br>~~a~~<br>~~|~~<br>~~GO~~|Effective Output Capacitance<br>(Energy Related)<br>~~|~~<br>~~GO~~|–––<br>~~|~~<br>~~GO~~|330<br>~~|~~<br>~~GO~~|–––<br>~~|~~<br>~~GO~~||VGS= 0V, VDS = 0V to 60V<br>~~ee~~|
|Coss eff.(TR)<br>~~GO~~|Output Capacitance(Time Related)<br>~~GO~~|–––<br>~~GO~~|425<br>~~GO~~|–––<br>~~GO~~||VGS= 0V,VDS = 0V to 60V|
|**Diode Characteristics**<br>~~GO es~~<br>~~esOD~~|||||||
|**Symbol**<br>~~es~~|**Parameter **<br>~~OD~~|**Min.**<br>~~OD~~|**Typ. **<br>~~OD~~|**Max.**<br>~~OD~~|**Units**<br>~~OD~~|**Conditions**<br>~~OD~~|
|IS<br>~~es~~<br>~~a~~|Continuous Source Current<br>(BodyDiode)<br>~~OD~~<br>~~a~~|–––<br>~~OD~~<br>~~a~~|–––<br>~~OD~~<br>~~a~~|87<br>~~OD~~<br>~~a~~|A<br>~~OD~~<br>~~a~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>D<br>S<br>G<br>~~OD~~<br>~~a~~|
|ISM<br>~~a~~|Pulsed Source Current<br>(Body Diode)<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|275<br>~~a~~|||
|VSD<br>~~a~~<br>~~po~~|Diode Forward Voltage<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|1.2<br>~~a~~|V<br>~~a~~|TJ= 25°C,IS= 52A,VGS= 0V<br>~~a~~|
|dv/dt<br>~~po~~|Peak Diode Recoverydv/dt|–––|10|–––|V/ns T|V/ns TJ= 175°C,IS=52A,VDS= 75V|
|trr<br>~~po~~<br>~~a ee~~|Reverse Recovery Time<br>~~ee~~|–––<br>~~ee~~|41<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~|TJ =25°CVDD= 64V<br>TJ =125°CIF= 52A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~ee~~|51<br>~~ee~~|–––<br>~~ee~~|||
|Qrr<br>~~a ee~~<br>~~pf~~|Reverse Recovery Charge<br>~~ee~~<br>~~pf~~|–––<br>~~ee~~|46<br>~~ee~~|–––<br>~~ee~~|nC<br>~~ee~~||
|||–––|62|–––|||
|IRRM<br>~~pf~~<br>~~a~~|Reverse Recovery Current<br>~~pf~~<br>~~a~~|–––|2.3|–––|A||



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IRFB7740PbF ~~[|~~ 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>7.0V 7.0V<br>6.0V 6.0V<br>100 5.5V 5.5V<br>5.0V 5.0V<br>4.8V 4.8V<br>BOTTOM 4.5V BOTTOM 4.5V<br>gz 100 4.)<br>10 4.5V<br>Viaauiee 4.5V Vas<br> 60µs PULSE WIDTH  60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>1 ail 10 fe<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Output Characteristics 

**Fig 4.** Typical Output Characteristics 

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1000<br>VDS = 25V<br> 60µs PULSE WIDTH<br>100<br>T J  = 175°C<br>10<br>TJ = 25°C<br>1<br>0.1 AL |<br>2.0 3.0 4.0 5.0 6.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Transfer Characteristics 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = Cgs  + Cgd,  Cds  SHORTED<br>Crss    = Cgd<br>C oss   = C ds  + C gd<br>10000 a ee<br>Ciss<br>1000 ari mail<br>et UT TT<br>Coss<br>Sanne Crss tf<br>100 lillies:<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

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2.6<br>2.4 ID = 52A PT tiitttyy<br>2.2 V GS  = 10V<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4 Peeee<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>Fig 6.   Normalized On-Resistance vs. Temperature<br>14<br>12 ID =  52 A V DS =  6 0V<br>Pee V DS =  3 8V ye<br>10 V DS= 1 5V<br>tit wa<br>8<br>6<br>ceeney Aan<br>4 CeeLf<br>2<br>PYLE<br>0<br>0 7ECCCEE 10 20 30 40 50 60 70 80 er 90 100<br> QG  Total Gate Charge (nC)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 8.** Typical Gate Charge vs. 

Gate-to-Source Voltage 

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IRFB7740PbF ~~a~~ 

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1000<br>100µsec<br>100 1msec<br>100 TJ = 175 ° C<br>10msec<br>10<br>ff 10 [ae OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>TJ = 25°C<br>1<br>1<br>Tc = 25°C<br>Tj = 175°C DC<br>VGS = 0V Single Pulse<br>0.1 P hoh 0.1 be<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10<br>VSD, Source-to-Drain Voltage (V) VDS,  Drain-toSource Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>Fig 9.   Typical Source-Drain Diode Forward Voltage<br>95 0.8<br>Id = 1.0mA<br>af 0.6 ||<br>90<br>EE | i<br>0.4<br>85 eT «=<br>waite 0.2 a<br>80<br>TTt 0.0 eann<br>75<br>0 20 40 60 80<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>VDS, Drain-to-Source Voltage (V)<br>TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A)<br>Energy (µJ)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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20.0<br>VGS = 5.5V<br>VGS = 6.0V<br>16.0 VGS = 7.0V<br>VGS = 8.0V<br>VGS = 10V<br>12.0<br>8.0<br>Jo— —T |<br>4.0<br>0 50 100 150 200<br>ID, Drain Current (A)<br>)<br><br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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~~IsaR~~ 

IRFB7740PbF ~~rrr~~ 

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10<br>1<br>D = 0.50<br>rr<br>0.20<br>0.1 0.10<br>0.05 S226<br>0.02<br>0.01 0.01<br>Notes:<br>Hail SINGLE PULSE<br>(  T HERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>Bai Ee<br>0.001<br>1E-006  tm 1E-005 0.0001 | 0.001 PR 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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100<br>Allowed avalanche Current vs avalanche<br>SoH To pulsewidth, tav, assuming Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>10<br>recuse<br>1<br>Allowed avalanche Current vs avalanche<br>BU pulsewidth, tav, assuming  Bz j = 25°C and<br>Tstart = 150°C. (Single Pulse)<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.  Avalanche Current vs. Pulse Width<br>160<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>140 BOTTOM   1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>ID = 52A 1.Avalanche failures assumption:<br>120 Une Nf | Purely a thermal phenomenon and failure occurs at a<br>temperature far in excess of Tjmaxjmax. This is validated for every<br>100 AALAND part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is not<br>PIN NE TT T  TTT EEEE    exceeded.<br>80<br>    23a, 23b.<br>60 PET INEN EEE<br>4. PD (ave) D (ave) = Average power dissipation per single avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br>40 PTI NNT  increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>BRRREERNENGE<br>20 7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax<br>    (assumed as 25°C in Figure 14, 15).<br>BERREEEESSEN<br>0 tav = Average time in avalanche.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tavthJC(D, tav(D, tavav) = Transient thermal resistance, see Figures 13)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmaxjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) D (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

   - ZthJC(D, tavthJC(D, tav(D, tavav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

EAS (AR) = PD (ave)·tav 

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IRFB7740PbF 

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4.0<br>3.0<br>ID = 100µA<br>2.0 S I D  = 1.0mA T<br>ID = 1.0A<br>1.0 ss<br>LLL<br>0.0 LHL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Temperature ( °C )<br>Fig 17.   Threshold Voltage vs. Temperature<br>16<br>IF = 52A<br>VR = 64V<br>T = 25°C<br>12 J<br>TJ = 125°C<br>| he<br>8<br>eet)<br>4<br>A<br>0<br>tty |<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>VGS(th) Gate threshold Voltage (V)<br>IRRM (A)<br>**----- End of picture text -----**<br>


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16<br>IF = 36A<br>VR = 64V<br>T = 25°C<br>12 J<br>TJ = 125°C<br>| LE<br>8<br>pea<br>4<br>Bean<br>tity<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

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280<br>IF = 36A<br>240 V R  = 64V<br>TJ = 25°C<br>200 T  = 125°C<br>J<br>160<br>| oe<br>120 LE<br>80<br>REE<br>40<br>0<br>APE<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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280<br>IF = 52A<br>240 V R  = 64V | ft |<br>TJ = 25°C<br>200 T  = 125°C<br>J<br>160<br>120<br>P| [ee] per<br>Pope<br>80<br>Tf<br>Bann<br>40<br>0 eept<br>|<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V ae<br>tp 0.01<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs /, (th) !: |<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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## ~~LR~~ 

## **TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

E X A M P L E : T H IS IS A N IR F 1 0 1 0 L O T  C O D E 1 7 8 9 A S S E M B L E D O N W W 1 9 , 2 0 0 0 IN T H E A S S E M B L Y  L IN E "C " 

N o t e :  "P " in a s s e m b ly  lin e p o s it io n in d ic a t e s  "L e a d -  F r e e " 

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P A R T  N U M B E R<br>IN T E R N A T IO N A L<br>R E C T IF IE R<br>L O G O<br>D A T E  C O D E<br>a<br>Y E A R  0  =  2 0 0 0<br>A S S E M B L Y<br>W E E K  1 9<br>L O T  C O D E<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-220|N/A|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**|**Comment**|
|---|---|
|8/29/2014|Updated latest package outline on page 9.|
|03/05/2015|Updated EAS (L =1mH)= 241mJ  on page 2<br>Updated note 8  “Limited by TJmax, starting TJ= 25°C, L = 1mH, RG= 50, IAS= 22A, VGS=10V” on page 2|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ © 2015 International Rectifier Submit Datasheet Feedback                   March 5, 2015                    March 5, 2015 ~~_~~ 

10 www.irf.com ~~=~~ 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRFB7740PBF/power-mosfet-n-channel-75-v-85-a-7300-ohm-to-2220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfb7740pbf/mosfet-n-ch-75v-87a-to-220ab-3/dp/2456722)
---

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