# Power MOSFET, HEXFET, N Channel, 75 V, 195 A, 2600 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2456726/)

**URL**: https://novapart.co/products/IRFB7730PBF/power-mosfet-hexfet-n-channel-75-v-195-a-2600-ohm
**SKU**: IRFB7730PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.2200
**Stock**: 500+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 375mW |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 195A |
| Drain Source On State Resistance | 2600µohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2456726/)

Strong _IR_ FET™ IRFB7730PbF IRFS7730PbF IRFSL7730PbF 

## International 

## **Application** 

- Brushed motor drive applications 

- BLDC motor drive applications 

- Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC inverters 

## **Benefits** 

- Improved  gate, avalanche and dynamic dV/dt ruggedness 

- Fully characterized capacitance and avalanche SOA 

- Enhanced body diode dV/dt and dI/dt capability 

- Lead-free, RoHS compliant 

HEXFET[® ] Power MOSFET 

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D VDSS  75V<br>RDS(on) typ. 2.2m <br>G             max  2.6m <br>ID (Silicon Limited)  246A <br>S<br>f== ID (Package Limited) 195A<br>D  D<br>S<br>D  S  S<br>G  G<br>G  [D ]<br>TO-220AB  D2Pak  TO-262<br>IRFB7730PbF  IRFS7730PbF  IRFSL7730PbF<br>G  D  S<br>Gate  Drain  Source<br>-——}——}—_<br>**----- End of picture text -----**<br>


|||~~-——}——}—_~~|**G**<br>Gate<br>~~-——}——}—_~~|**D**<br>**S**<br>Drain<br>Source<br>~~-——}——}—_~~|
|---|---|---|---|---|
|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|||**Form**|**Quantity**||
|IRFB7730PbF|TO-220|Tube|50|IRFB7730PbF|
|IRFSL7730PbF|TO-262|Tube|50|IRFSL7730PbF|
|IRFS7730PbF|D2-Pak|Tube|50|IRFS7730PbF|
|||Tape and Reel Left|800|IRFS7730TRLPbF|



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8 250<br>ID = 100A<br>Limited by package<br>200<br>6 Wh Pe<br>TJ = 125°C 150<br>4<br>th 100 NN<br>2<br>KER T RO J = 25°C EE 50 CCEELR<br>0 0<br>4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175<br>TELE PTT TT<br> TC , Case Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>) <br>RDS(on),  Drain-to -Source On Resistance (m<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                  November 7, 2014 ~~a~~ 

IRFB/S/SL7730PbF 

## **Absolute Maximum Rating** 

||**Symbol**|**Parameter**||**Max.**|**Max.**||**Units**|
|---|---|---|---|---|---|---|---|
||ID @TC= 25°C|Continuous Drain Current,VGS @10V(Silicon Limited)||246||||
||ID @TC= 100°C<br>ID @TC= 25°C|Continuous Drain Current,VGS @10V(Silicon Limited)<br>Continuous Drain Current,VGS @10V(Package Limited)||174<br>195|||A|
||IDM|Pulsed Drain Current||984*||||
||PD @TC= 25°C|Maximum Power Dissipation||375|||W|
|||Linear DeratingFactor||2.5|||W/°C|
||VGS|Gate-to-Source Voltage||± 20|||V|
||TJ<br>TSTG|Operating Junction and<br>StorageTemperatureRange|-55  to + 175|-55  to + 175|-55  to + 175||°C|
|||SolderingTemperature,for 10 seconds (1.6mm fromcase)||300||||
|||MountingTorque, 6-32 or M3 Screw|10 lbf·in(1.1 N·m|||1.1 N·m)||
||**Avalanche Characteristics**|||||||
|**Symbol**<br>**Parameter**<br>**Max.**<br>**Units**<br>EAS (Thermally limited)<br>SinglePulseAvalancheEnergy <br>465<br>EAS (Thermally limited)<br>Single Pulse Avalanche Energy<br>898<br>IAR<br>Avalanche Current<br>See Fig 15, 16, 23a, 23b<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>mJ<br>~~————~~||||||||
||**Thermal Resistance**|||||||
||**Symbol**|**Parameter**|**Typ.**|||**Max.**|**Units**|
||RJC|Junction-to-Case|–––|||0.40||
||RCS<br>RJA|Case-to-Sink,Flat Greased Surface<br>Junction-to-Ambient(TO-220)|0.50<br>–––|||–––<br>62|°C/W|
||RJA|Junction-to-Ambient(PCB Mount) (D2Pak) |–––|||40||



## **Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min.**|**Typ. Max. Units**|**Typ. Max. Units**|**Typ. Max. Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|75|–––|–––|V|VGS= 0V,ID= 250µA|
|V(BR)DSS/TJ|JBreakdown Voltage Temp. Coefficient|–––|40|––– mV/°C Reference to 25°C|––– mV/°C Reference to 25°C|––– mV/°C Reference to 25°C,ID= 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|2.2|2.6|m|VGS= 10V,ID= 100A|
|||–––|2.6|–––||VGS=6.0V,ID=50A|
|VGS(th)|GateThresholdVoltage|2.1|–––|3.7|V|VDS= VGS,ID= 250µA|
|GS(th)<br>IDSS|Drain-to-Source Leakage Current|–––|–––|1.0|µA|VDS =75 V, VGS =0V|
|||–––|–––|150||VDS= 75V,VGS=0V,TJ= 125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS = -20V|
|RG|Gate Resistance|–––|2.1|–––|||



## **Notes:** 

Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) 

- Repetitive rating; pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 93µH, RG = 50, IAS = 100A, VGS =10V. 

- ISD  100A, di/dt  1626A/µs, VDD  V(BR)DSS, TJ 175°C. 

- Pulse width  400µs; duty cycle  2%. 

-  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

-  R is measured at TJ approximately 90°C. 

-  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 42A, VGS =10V. 

- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques 

- refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf 

- Pulse drain current is limited at 780A by source bonding technology. 

2 

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IRFB/S/SL7730PbF ~~SS~~ 

## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~es~~<br>~~a~~|**Parameter**<br>~~es~~|**Min.**<br>~~es~~|**Typ. **<br>~~es~~|**Max. Units**<br>~~es~~<br>~~OO~~|**Max. Units**<br>~~es~~<br>~~OO~~|**Max. Units**<br>**Conditions**<br>~~es~~|
|---|---|---|---|---|---|---|
|gfs<br>~~a~~|Forward Transconductance|249|–––|–––<br>~~OO~~|S<br>~~OO~~|VDS= 10V,ID=100A|
|Qg<br>~~a~~|Total Gate Charge|–––|271|407|nC|ID= 100A<br>VDS= 38V<br>VGS= 10V|
|Qgs|Gate-to-Source Charge|–––|55|–––|||
|Qgd<br>~~a~~<br>~~es~~|Gate-to-Drain Charge|–––|79|–––|||
|Qsync<br>~~a~~<br>~~es~~<br>~~es~~|Total Gate Charge Sync.(Qg–Qgd)|–––|192|–––|||
|td(on)<br>~~es~~<br>~~es~~<br>~~ee~~|Turn-On DelayTime<br>~~ee~~|–––<br>~~ee~~|21<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 38V<br>ID= 100A<br>RG= 2.7<br>VGS= 10V<br>~~ee~~|
|tr<br>~~es~~<br>~~ee~~|Rise Time<br>~~ee~~|–––<br>~~ee~~|120<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~ee~~|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~|180<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~es~~<br>~~a~~|Fall Time|–––|115|–––|||
|Ciss<br>~~es~~<br>~~a~~|Input Capacitance|–––|13660|–––|pF<br>~~es~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7<br>~~ee~~|
|Coss<br>~~es~~<br>~~a~~|Output Capacitance|–––|1120|–––|||
|Crss<br>~~a~~|Reverse Transfer Capacitance|–––|690|–––|||
|Coss eff.(ER)<br>~~a~~<br>~~|~~<br>~~GO~~|Effective Output Capacitance<br>(Energy Related)<br>~~|~~<br>~~GO~~|–––<br>~~|~~<br>~~GO~~|1060<br>~~|~~<br>~~GO~~|–––<br>~~|~~<br>~~GO~~||VGS= 0V, VDS = 0V to 60V<br>~~ee~~|
|Coss eff.(TR)<br>~~GO~~|Output Capacitance(Time Related)<br>~~GO~~|–––<br>~~GO~~|1275<br>~~GO~~|–––<br>~~GO~~||VGS= 0V,VDS = 0V to 60V|
|**Diode Characteristics**<br>~~GO es~~<br>~~esOD~~|||||||
|**Symbol**<br>~~es~~|**Parameter **<br>~~OD~~|**Min.**<br>~~OD~~|**Typ. **<br>~~OD~~|**Max.**<br>~~OD~~|**Units**<br>~~OD~~|**Conditions**<br>~~OD~~|
|IS<br>~~es~~<br>~~a~~|Continuous Source Current<br>(BodyDiode)<br>~~OD~~<br>~~a~~|–––<br>~~OD~~<br>~~a~~|–––<br>~~OD~~<br>~~a~~|246<br>~~OD~~<br>~~a~~|A<br>~~OD~~<br>~~a~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>D<br>S<br>G<br>~~OD~~<br>~~a~~|
|ISM<br>~~a~~|Pulsed Source Current<br>(Body Diode)<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|984*<br>~~a~~|||
|VSD<br>~~a~~<br>~~po~~|Diode Forward Voltage<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|1.2<br>~~a~~|V<br>~~a~~|TJ= 25°C,IS= 100A,VGS= 0V<br>~~a~~|
|dv/dt<br>~~po~~|Peak Diode Recoverydv/dt|–––|16|–––|V/ns T|V/ns TJ= 175°C,IS=100A,VDS= 75V|
|trr<br>~~po~~<br>~~a ee~~|Reverse Recovery Time<br>~~ee~~|–––<br>~~ee~~|44<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~|TJ =25°CVDD= 64V<br>TJ =125°CIF= 100A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C <br>~~a~~|
|||–––<br>~~ee~~|51<br>~~ee~~|–––<br>~~ee~~|||
|Qrr<br>~~a ee~~<br>~~pf~~|Reverse Recovery Charge<br>~~ee~~<br>~~pf~~|–––<br>~~ee~~<br>|70<br>~~ee~~<br>|–––<br>~~ee~~<br>|nC<br>~~ee~~<br>||
|||–––<br>|97<br>|–––<br>|||
|IRRM<br>~~pfa~~|Reverse Recovery Current<br>~~pfa~~|–––<br>~~a~~|2.6<br>~~a~~|–––<br>~~a~~|A<br>~~a~~||



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10000 10000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>1000 7.0V 7.0V<br>6.0V 6.0V<br>5.5V 1000 5.5V<br>5.0V 5.0V<br>sti sii<br>BOTTOM 4.5V BOTTOM 4.5V<br>100 — Lo<br>100<br>4.5V<br>10 4.5V<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>1 10 foo<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 2.4<br>ID = 100A<br>VGS = 10V<br>2.0<br>100<br>TJ = 175°C 1.6<br>10 ao AV e oeIPA<br>TJ = 25°C 1.2<br>1 Wh TAT<br>0.8<br>/, VDS = 25V ATT<br>60µs PULSE WIDTH<br>0.1 ALL ft 0.4 ATLA.<br>2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100120140160180<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>1000000 14.0<br>VCGS  iss   = C= 0V,       f gs + Cgd= 1 MHZ,  CCGS  iss   = C= 0V,       f gs + Cgd= 1 MHZ,  CGS  iss   = C= 0V,       f gs + Cgd= 1 MHZ,  Ciss   = C= 0V,       f gs + Cgd= 1 MHZ,  C  = C= 0V,       f gs + Cgd= 1 MHZ,  C= 0V,       f gs + Cgd= 1 MHZ,  C 0V,       f gs + Cgd= 1 MHZ,  Cgs + Cgd= 1 MHZ,  C+ Cgd= 1 MHZ,  Cgd= 1 MHZ,  C= 1 MHZ,  C 1 MHZ,  C,  C ds SHORTEDSHORTED ID= 100A<br>12.0<br>C rss    = C gd  VDS= 60V<br>100000 C oss   = C C ds  + C C gd 10.0 VDS= 38V<br>VDS= 15V<br>|| 8.0 ay<br>Cississ<br>10000<br>at Ell 6.0 aaEe An<br>Cossoss<br>C rss 4.0<br>1000<br>el 2.0 aa ann<br>100 aie 0.0 PCE<br>1 10 100 0 50 100 150 200 250 300 350<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

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1000000<br>VCGS  iss   = C= 0V,       f gs + Cgd= 1 MHZ,  CCGS  iss   = C= 0V,       f gs + Cgd= 1 MHZ,  CGS  iss   = C= 0V,       f gs + Cgd= 1 MHZ,  Ciss   = C= 0V,       f gs + Cgd= 1 MHZ,  C  = C= 0V,       f gs + Cgd= 1 MHZ,  C= 0V,       f gs + Cgd= 1 MHZ,  C 0V,       f gs + Cgd= 1 MHZ,  Cgs + Cgd= 1 MHZ,  C+ Cgd= 1 MHZ,  Cgd= 1 MHZ,  C= 1 MHZ,  C 1 MHZ,  C,  C ds SHORTEDSHORTED<br>C rss    = C gd<br>100000 C oss   = C C ds  + C C gd<br>||<br>Cississ<br>10000<br>at Ell<br>Cossoss<br>C rss<br>1000<br>el<br>100 aie<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

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1000<br>1000<br>——a RE<br>100µsec<br>1msec<br>TJ = 175°C<br>100 Tha) 100 —ex Limited by<br>package<br>OPERATION<br>10 IN THIS<br>AREA<br>10 c/een TJ = 25°C LIMITED BY<br>R DS (on)<br>1 10msec<br>Tc = 25°C DC<br>Tj = 175 ° C<br>V GS  = 0V Single Pulse<br>1.0 fo 0.1 EN<br>0.2 0.6 1.0 1.4 1.8 2.2 0.1 1 10<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>Fig 9.   Typical Source-Drain Diode Forward Voltage<br>95 6.0<br>Id = 1.0mA<br>5.0<br>90<br>pu [[] 4.0<br>85 3.0<br>THT<br>2.0<br>80<br>1.0<br>HTH<br>75 0.0<br>-60 -40 -20 0 20 40 60 80 100120140160180 -10 0 10 20 30 40 50 60 70 80<br>TJ , Temperature ( °C )<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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3.0<br>2.8<br>ttt Ee<br>2.6<br>aT TE<br>2.4<br>Leer<br>Vgs = 5.5V<br>Vgs = 6.0V<br>2.2 Vgs = 7.0V<br>Vgs = 8.0V<br>Vgs = 10V<br>2.0 alyy td.<br>0 20 40 60 80 100 120 140 160 180 200<br>ID, Drain Current (A)<br>)<br><br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

5 ~~SE~~ 

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IRFB/S/SL7730PbF ~~rT~~ 

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1<br>D = 0.50<br>0.1<br>0.20<br>a 0.10<br>0.05<br>0.01 0.02<br>0.01<br>Spe a<br>0.001 SINGLE PULSE 0 EN<br>a0 = wal A Notes:<br>( THERMAL RESPONSE )<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001<br>1E-006 a raiti 1E-005 0.0001 0.001 h 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming Tj = 150°C and<br>Tstart = 25°C (Single Pulse)<br>100<br>minis wn<br>10<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>Sat Sites<br>loco<br>1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02<br>tav (sec)<br>Fig 15.  Avalanche Current vs. Pulse Width<br>500<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>BOTTOM   1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>400 I D  = 100A 1.Avalanche failures assumption:<br>NEP Purely a thermal phenomenon and failure occurs at a<br>temperature far in excess of Tjmaxjmax. This is validated for every<br>part type.<br>300 2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not<br>NNT    exceeded.<br>3. Equation below based on circuit and waveforms shown in Figures<br>200     23a, 23b.<br>NN 4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br> increase during avalanche).<br>100<br>6. Iav = Allowable avalanche current.<br>MEDASSSUUEE<br>7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax<br>    (assumed as 25°C in Figure 15, 16).<br>LLNS<br>0 tav = Average time in avalanche.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


   - Purely a thermal phenomenon and failure occurs at a 

   - temperature far in excess of Tjmaxjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

- EAS (AR) = PD (ave)·tav 

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**==> picture [540 x 234] intentionally omitted <==**

**----- Start of picture text -----**<br>
IRFB/S/SL7730PbF<br>TOR<br>4.0 20<br>IF = 60A<br>3.5 VR = 64V<br>TOT TTT 15 T J = 25°C 25°C°CC TT<br>3.0<br>eh PPM | | TT TJ = 125°C a<br>2.5<br>|| PSs i Pe Bza<br>ID = 250µA 10<br>2.0 I D  = 1.0mA CEREAL | am<br>ID = 1.0A<br>1.5 SEEANG Svan<br>5<br>1.0<br>0.5 0<br>PTET [TTT] PL ELINS ay] |<br>-75 -50 -25 0 25 50 75 100 125 150 175 0 200 400 600 800 1000<br>TJ , Temperature ( °C ) diF /dt (A/µs)<br>IRRM (A)<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
20<br>IF = 60A<br>VR = 64V<br>15 T J = 25°C 25°C°CC TT<br>TJ = 125°C a<br>Bza<br>10<br>am<br>Svan<br>5<br>0<br>ay] |<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

**Fig 18.** Typical Recovery Current vs. dif/dt 

**==> picture [486 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 500<br>IF = 100A IF = 60A<br>VR = 64V VR = 64V<br>15 T J = 25°C 400 TJ = 25°C<br>TJ = 125°C TJ = 125°C<br>300<br>eABee LEEZ<br>10<br>200<br>pZaun n eeecae<br>5<br>ye Zann<br>100<br>M anne TET<br>0 0<br>0 200 400 600 800 1000 0 200 400 600 800 1000<br>diF /dt (A/µs) diF /dt (A/µs)<br>IRRM (A) QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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**----- Start of picture text -----**<br>
500<br>IF = 100A<br>VR = 64V<br>400<br>TJ = 25°C<br>TJ = 125°C<br>Te<br>300<br>Eze<br>200<br>epee<br>Zann<br>100<br>PTT<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

7 ~~SE~~ 

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~~IéaR~~ 

IRFB/S/SL7730PbF ~~ee~~ 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

**==> picture [148 x 89] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>tp 0.01<br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 24a.** Switching Time Test Circuit 

**==> picture [21 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V(BR)DSS<br>< tp > |<br>IAS<br> Unclamped Inductive Waveforms<br>90% |\/<br>|<br>|<br>Ves,<br>mh<br>taon) tr taott) tf<br>Fig 24b.   Switching Time Waveforms<br>Id<br>Vds<br>Vgs<br>|<br>Vgs(th) |<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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IRFB/S/SL7730PbF 

## **TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

**==> picture [487 x 94] intentionally omitted <==**

**----- Start of picture text -----**<br>
E X A M P L E : T H IS  IS  A N  IR F 1 0 1 0<br>L O T  C O D E  1 7 8 9 IN T E R N A T IO N A L P A R T  N U M B E R<br>A S S E M B L E D  O N  W W  1 9 , 2 0 0 0 R E C T IF IE R<br>IN  T H E  A S S E M B L Y  L IN E  "C " L O G O<br>D A T E  C O D E<br>Y E A R  0  =  2 0 0 0<br>N o t e :  "P " in  a s s e m b ly  lin e  p o s it io n A S S E M B L Y<br>in d ic a t e s  "L e a d  -  F r e e " L O T  C O D E W E E K  1 9<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

9 

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IRFB/S/SL7730PbF ~~CT~~ 

## ~~IG@R~~ 

## **TO-262 Package Outline** (Dimensions are shown in millimeters (inches) 

## **TO-262 Part Marking Information** 

**==> picture [286 x 244] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>INTERNATIONAL<br>ASSEMBLED ON WW 19, 1997<br>RECTIFIER<br>IN THE ASSEMBLY LINE "C"<br>LOGO<br>DATE CODE<br>YEAR 7 = 1997<br>ASSEMBLY<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER<br>LOGO<br>DATE CODE<br>P = DESIGNATES LEAD-FREE<br>ASSEMBLY<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 = 1997<br>WEEK 19<br>A = ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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~~IR~~ 

IRFB/S/SL7730PbF ~~SS~~ 

**D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D[2] Pak (TO-263AB) Part Marking Information** 

**==> picture [296 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO<br>DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY<br>LOT CODE WEEK 02<br>LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER F530S<br>LOGO DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY<br>YEAR 0 =  2000<br>LOT CODE<br>WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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~~I6aR~~ 

IRFB/S/SL7730PbF ~~ee~~ 

**D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [275 x 294] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609) 24.30 (.957)<br>15.22 (.601) 23.90 (.941)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418. 26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

**Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-220|N/A|
||D2Pak|MSL1|
||TO-262|N/A|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**|**Comments**|
|---|---|
|11/7/2014|<br>Updated EAS (L =1mH)= 898mJ  on page 2<br><br>Updated note 9  “Limited by TJmax, starting TJ= 25°C, L = 1mH, RG= 50, IAS= 42A, VGS=10V” on page 2<br><br>Updatedpackage outline onpage 9,10,11.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFB7730PBF/power-mosfet-hexfet-n-channel-75-v-195-a-2600-ohm)
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---

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