# Power MOSFET, N Channel, 60 V, 75 A, 7300 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2406519/)

**URL**: https://novapart.co/products/IRFB7546PBF/power-mosfet-n-channel-60-v-75-a-7300-ohm-to-220ab
**SKU**: IRFB7546PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3410
**Stock**: 200+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 99W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 75A |
| Drain Source On State Resistance | 7300µohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2406519/)

## Strong _IR_ FET™ IRFB7546PbF 

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Application  HEXFET [® ] Power MOSFET<br>Brushed Motor drive applications<br>BLDC Motor drive applications  D VDSS  60V<br>Battery powered circuits Battery powered circuits<br>Half-bridge and full-bridge topologies   RDS(on) typ. 6.0m <br>Synchronous rectifier applications  G             max  7.3m <br>Resonant mode power supplies<br>OR-ing and redundant power switches  S ID   75A<br>==<br>DC/DC and AC/DC converters<br>DC/AC Inverters<br>Benefits  S<br>D<br>Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness  G<br>Fully Characterized Capacitance and Avalanche SOA<br>TO-220AB<br>Enhanced body diode dV/dt and dI/dt Capability<br>IRFB7546PbF<br>Lead-Free, RoHS Compliant<br>G  D  S<br>Gate  Drain  Source<br>[><br>Base part number  Package Type  Standard Pack  Orderable Part Number<br>Form  Quantity<br>IRFB7546PbF  TO-220  Tube  50  IRFB7546PbF<br>24 80<br>ID = 45AD = 45A= 45A<br>20 ToT ~<br>60<br>16<br>ccc TJ = 125°CJ = 125°C= 125°C PSE<br>12 40<br>ACE TENE<br>8<br>CACCEREE 20 TTT IN<br>4<br>TJ = 25°CJ = 25°C= 25°C<br>CCREEEAEE \<br>0 0<br>2 SRRRGeunn 4 6 8 10 12 14 16 18 20 LLELLA<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

- Battery powered circuits Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC Inverters 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free, RoHS Compliant 

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24<br>ID = 45AD = 45A= 45A<br>20 ToT<br>16<br>ccc TJ = 125°CJ = 125°C= 125°C<br>12<br>ACE<br>8<br>CACCEREE<br>4<br>TJ = 25°CJ = 25°C= 25°C<br>CCREEEAEE<br>0<br>2 SRRRGeunn 4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                   November 7, 2014 ~~=°°.~~ 

IRFB7546PbF ~~|~~ 

## ~~LiaR~~ 

## **Absolute Maximum Rating** 

||**Symbol**|**Parameter**||**Max.**|**Max.**|**Units**|
|---|---|---|---|---|---|---|
||ID @TC= 25°C|Continuous Drain Current,VGS @10V||75|75||
||ID @TC= 100°C|Continuous Drain Current,VGS @10V||53|53|A|
||IDM|Pulsed Drain Current||300|||
||PD @TC= 25°C|Maximum Power Dissipation||99|99|W|
|||Linear DeratingFactor||0.7||W/°C|
||VGS|Gate-to-Source Voltage||± 20||V|
||TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|-55  to + 175||°C|
|||Soldering Temperature, for 10 seconds (1.6mm from case)||300|||
|||MountingTorque, 6-32 or M3 Screw|10 lbf·in(1.1 N·m)||||
||**Avalanche Characteristics**||||||
|EAS (Thermally limited)<br>SinglePulseAvalancheEnergy <br>110<br>mJ<br>EAS (Thermally limited)<br>Single Pulse Avalanche Energy<br>170<br>IAR<br>Avalanche Current<br>See Fig 15, 16, 23a, 23b<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>~~—SS=EEu—~~|||||||
||**Thermal Resistance**||||||
||**Symbol**|**Parameter**|**Typ.**||**Max.**|**Units**|
||RJC|Junction-to-Case|–––||1.52||
||RCS|Case-to-Sink,Flat Greased Surface|0.50||–––|°C/W|
||RJA|Junction-to-Ambient<br>–––|||62||



## **Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min.**|**Typ. Max.**|**Typ. Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|60|–––|–––|V|VGS= 0V,ID= 250µA|
|V(BR)DSS/TJ|JBreakdown Voltage Temp. Coefficient|–––|46|–––|mV/°C Reference to 25°C|mV/°C Reference to 25°C,ID= 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|6.0|7.3|m|VGS= 10V,ID= 45A|
|||–––|7.5|–––||VGS=6.0V,ID= 23A|
|VGS(th)|Gate Threshold Voltage|2.1|–––|3.7|V|VDS =VGS, ID =100µA|
|GS(th)<br>IDSS|Drain-to-Source Leakage Current|–––|–––|1.0|µA|VDS=60V,VGS=0V|
|||–––|–––|150||VDS =60V,VGS =0V,TJ =125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 20V|
||Gate-to-SourceReverseLeakage|–––|–––|-100||VGS= -20V|
|RG|Gate Resistance|–––|1.6|–––|||



## **Notes:** 

-  Repetitive rating; pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 110µH, RG = 50, IAS = 45A, VGS =10V. 

-  ISD  100A, di/dt  1260A/µs, VDD  V(BR)DSS, TJ 175°C. 

-  Pulse width  400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- R is measured at TJ approximately 90°C. 

- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques 

- refer to application note #AN-994.:  http://www.irf.com/technical-info/appnotes/an-994.pdf 

- Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 19A, VGS =10V 

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~~LaR~~ 

IRFB7546PbF ~~|~~ 

## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~pO~~|**Parameter**<br>~~pO~~|**Min.**<br>~~pO~~|**Typ. **<br>~~pO~~|**Max. Units**<br>~~pO~~|**Max. Units**<br>~~pO~~|**Max. Units**<br>**Conditions**<br>~~pO~~|
|---|---|---|---|---|---|---|
|gfs<br>~~a~~|Forward Transconductance<br>|150<br>|–––<br>|–––<br>|S<br>|VDS= 10V,ID= 45A<br>|
|Qg<br>~~————~~|Total Gate Charge<br>~~————~~|–––<br>~~————~~|58<br>~~————~~|87<br>~~————~~|nC<br>~~————~~<br>~~ee~~|ID= 45A<br>VDS= 30V<br>VGS= 10V<br>~~————~~<br>~~ee~~|
|Qgs<br>~~————~~|Gate-to-Source Charge<br>~~————~~|–––<br>~~————~~|14<br>~~————~~|–––<br>~~————~~|||
|Qgd<br>~~————~~<br>~~a~~|Gate-to-Drain Charge<br>~~————~~<br>|–––<br>~~————~~<br>|18<br>~~————~~<br>|–––<br>~~————~~<br>|||
|Qsync<br>~~————~~<br>~~ayr~~<br>~~——<—~~|Total Gate Charge Sync.(Qg–Qgd)<br>~~————~~<br>~~yr~~<br>~~——<—~~|–––<br>~~————~~<br>~~yr~~|40<br>~~————~~<br>~~yr~~|–––<br>~~————~~<br>~~yr~~|||
|td(on)<br>~~yr~~<br>~~——<—~~|Turn-On DelayTime<br>~~yr~~<br>~~——<—~~|–––<br>~~yr~~|11<br>~~yr~~|–––<br>~~yr~~|ns<br>~~ee~~|VDD= 30V<br>ID= 45A<br>RG= 2.7<br>VGS= 10V<br>~~ee~~|
|tr<br>~~——<—~~|Rise Time<br>~~——<—~~|–––|51|–––|||
|td(off)<br>~~——<—~~|Turn-Off DelayTime<br>~~——<—~~|–––|32|–––|||
|tf<br>~~——<—~~<br>~~nS~~|Fall Time<br>~~——<—~~<br>~~nS~~|–––<br>~~nS~~|34<br>~~nS~~|–––<br>~~nS~~|||
|Ciss<br>~~——<—~~<br>~~nS~~|Input Capacitance<br>~~——<—~~<br>~~nS~~|–––<br>~~nS~~|3000<br>~~nS~~|–––<br>~~nS~~|pF<br>~~ee~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7<br>~~ee~~|
|Coss<br>~~nS~~|Output Capacitance<br>~~nS~~|–––<br>~~nS~~|280<br>~~nS~~|–––<br>~~nS~~|||
|Crss<br>~~a~~|Reverse Transfer Capacitance<br>|–––<br>|180<br>|–––|||
|Coss eff.(ER)<br>~~Se~~|Effective Output Capacitance<br>(Energy Related)<br>~~Se~~|–––<br>~~Se~~<br>~~GG~~|290<br>~~Se~~<br>~~GG~~|–––<br>~~GG~~||VGS= 0V, VDS = 0V to 48V|
|Coss eff.(TR)<br>~~a~~|Output Capacitance(Time Related)<br>~~a~~|–––<br>~~a~~<br>~~GG~~|370<br>~~a~~<br>~~GG~~|–––<br>~~a~~<br>~~GG~~||VGS= 0V,VDS = 0V to 48V|
|**Diode Characteristics**<br>~~GG~~<br>~~COG GO~~|||||||
|**Symbol**<br>~~CC~~|**Parameter **<br>~~CC~~|**Min.**<br>~~CC~~|**Typ. **<br>~~CC~~<br>~~COG~~|**Max.**<br>~~CC~~<br>~~COG~~|**Units**<br>~~CC~~<br>~~COG G~~|**Conditions**<br>~~CC~~<br>~~GO~~|
|IS<br>~~fp~~|Continuous Source Current<br>(BodyDiode)<br>~~fp~~|–––<br>~~fp~~|–––<br>~~COG~~<br>~~fp~~|75<br>~~COG~~<br>~~fp~~|A<br>~~COG G~~<br>~~fp~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>D<br>S<br>G<br>~~GO~~<br>~~fp~~|
|ISM<br>~~fp~~|Pulsed Source Current<br>(Body Diode)<br>~~fp~~|–––<br>~~fp~~|–––<br>~~fp~~|300<br>~~fp~~|||
|VSD<br>~~re~~|Diode Forward Voltage<br>~~re~~|–––<br>~~re~~|–––<br>~~re~~|1.2<br>~~re~~|V<br>~~re~~|TJ= 25°C,IS= 45A,VGS= 0V<br>~~re~~|
|dv/dt<br>~~re~~|Peak Diode Recoverydv/dt<br>~~re~~|–––<br>~~re~~|7.9<br>~~re~~|–––<br>~~re~~|V/ns T<br>~~re~~|V/ns TJ= 175°C,IS= 45A,VDS= 60V<br>~~re~~|
|trr<br>~~ee~~<br>~~pf~~|Reverse Recovery Time<br>~~ee~~<br>~~pf~~|–––<br>~~ee~~|29<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~|TJ =25°CVDD= 51V<br>TJ =125°CIF= 45A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~ee~~|32<br>~~ee~~|–––<br>~~ee~~|||
|Qrr<br>~~ee~~<br>~~pf~~|Reverse Recovery Charge<br>~~ee~~<br>~~pf~~|–––<br>~~ee~~|33<br>~~ee~~|–––<br>~~ee~~|nC<br>~~ee~~||
|||–––|40|–––|||
|IRRM<br>~~pf~~|Reverse Recovery Current<br>~~pf~~|–––|1.9|–––|A||



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IRFB7546PbF ~~CT~~ 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>100 5.0V 100 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>4.5V<br>10 10<br>4.5V<br>60µs PULSE WIDTH<br>60µs PULSE WIDTH Tj = 175 ° C<br>Tj = 25°C<br>1 1<br>p= ye<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 2.4<br>ID = 45A<br>VGS = 10V<br>2.0<br>100<br>ciao T J  = 175°C TJ = 25°C 1.6 ay<br>10<br>PVT) rete<br>1.2<br>1<br>0.8<br>VL VDS = 25V CEPT<br>60µs PULSE WIDTH<br>0.1 0.4<br>Fife TT<br>2 3 4 5 6 7 8 -60 -20 20 60 100 140 180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 14.0<br>VGS   = 0V,       f = 1 MHZGS   = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTEDiss   = Cgs + Cgd,  Cds SHORTED  = Cgs + Cgd,  Cds SHORTEDgs + Cgd,  Cds SHORTED+ Cgd,  Cds SHORTEDgd,  Cds SHORTED,  Cds SHORTEDds SHORTEDSHORTED ID = 45A<br>12.0<br>C rss    = C gd  VDS= 48V<br>Coss  = Cds + Cgdoss  = Cds + Cgd= Cds + Cgdds + Cgd+ Cgdgd 10.0 V DS = 30V<br>10000 VDS= 12V<br>8.0<br>Cississ<br>6.0<br>1000 CrssCossrssCoss 4.0<br>aii SEE? Au<br>siete: Ul 2.0 CPE<br>100 A ise 0.0 AEH<br>0.1 1 10 100 0 10 20 30 40 50 60 70 80<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Normalized On-Resistance vs. Temperature 

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100000<br>VGS   = 0V,       f = 1 MHZGS   = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTEDiss   = Cgs + Cgd,  Cds SHORTED  = Cgs + Cgd,  Cds SHORTEDgs + Cgd,  Cds SHORTED+ Cgd,  Cds SHORTEDgd,  Cds SHORTED,  Cds SHORTEDds SHORTEDSHORTED<br>C rss    = C gd<br>Coss  = Cds + Cgdoss  = Cds + Cgd= Cds + Cgdds + Cgd+ Cgdgd<br>10000<br>Cississ<br>1000 Cossoss<br>CrssCossrssCoss<br>aii<br>siete: Ul<br>A ise<br>100<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

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IRFB7546PbF 

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1000<br>100<br>TJ = 175°C TJ = 25°C<br>10<br>:<br>1<br>-f<br>VGS = 0V<br>pa<br>Pee<br>0.1<br>0.1 0.4 0.7 1.0 1.3 1.6<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

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78<br>Id = 1.0mA<br>76 TTT<br>74 | ft |<br>| | ALL<br>72<br>TZ<br>70<br>68 AT<br>66 Al| ft<br>CCE<br>64<br>-60 -20 20 60 100 140 180<br>TJ , Temperature ( °C )<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


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100 100µsec<br>10<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on) 1msec<br>ES<br>1<br>10msec<br>DC<br>0.1 Tc = 25°C Ss<br>Tj = 175°C<br>Single Pulse<br>0.01 siiSit Bai<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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40.0<br>VGS = 5.5V<br>35.0 VGS = 6.0V |<br>VGS = 7.0V<br>30.0 VGS = 8.0V<br>VGS = 10V<br>25.0 | SKSEZ|TZ<br>20.0<br>15.0<br>10.0<br>Bee<br>5.0<br>— 77,<br>0.0<br>0 50 100 150 200<br>ID, Drain Current (A)<br>)<br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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## ~~IVR~~ 

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10<br>See ee EN Be<br>1<br>D = 0.50<br>0.20<br>0.10<br>i i TT<br>0.1 0.05<br>== 0.02 Ter<br>0.01<br>= Sa.<br>0.01<br>SINGLE PULSE Notes:<br>S=2fnitld<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>el MB<br>0.001<br>1E-006 1E-005 ne 0.0001 I 0.001 as 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Allowed avalanche Current vs avalanche<br>SS Ei pulsewidth, tav, assuming  Tj = 150 ° C and<br>Tstart =25°C (Single Pulse)<br>Snell 7<br>10<br>1 a aShin<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 150°C.<br>seme<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>i<br>tav (sec)<br>Avalanche Current (A)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 15.** Avalanche Current vs. Pulse Width 

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120<br>TOP          Single Pulse<br>BOTTOM   1.0% Duty Cycle<br>100 I D  = 45A<br>qT<br>80<br>Sooo<br>60<br>NN<br>40<br>PINNED<br>20<br>LANiL LTTPN I N<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

- 1.Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a 

   - temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

EAS (AR) = PD (ave)·tav 

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4.5<br>TIIITIIL<br>4.0<br>3.5<br>CERT<br>3.0<br>ESSER Cee<br>2.5<br>TASS<br>2.0 ID = 100µA<br>ID = 250µA BZaNe<br>ID = 1.0mA<br>1.5 ID = 1.0A ZAEERNN<br>SaaamaN<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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15<br>IF = 30A<br>VR = 51V<br>12<br>TJ = 25°C<br>TJ = 125°C<br>9 pease<br>pe<br>6 | ee<br>prt<br>3<br>;<br>0 7 |tf<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

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15<br>IF = 45A<br>VR = 51V<br>12 et [<br>TJ = 25°C<br>TJ = 125°C<br>9<br>ue:<br>6<br>ee<br>3<br>Bann<br>0<br>TL LL<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

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300<br>IF = 30A<br>250 VR = 51V<br>CT<br>TJ = 25°C<br>200 T J  = 125°C<br>150 ear<br>100<br>a<br>50 enn<br>0 rf TE l<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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300<br>IF = 45A<br>| Ly<br>250 VR = 51V<br>TJ = 25°C<br>200 T J  = 125°C | VW<br>|]<br>150<br>100 | ly<br>50 fT|<br>tt<br>0 ft fe<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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IRFB7546PbF 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V ae<br>tp 0.01<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

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**Fig 24b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs /, (th) !: |<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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8 

IRFB7546PbF ~~|~~ 

## ~~LiaR~~ 

**TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

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E X A M P L E : T H IS  IS  A N  IR F 1 0 1 0<br>L O T  C O D E  1 7 8 9 IN T E R N A T IO N A L P A R T  N U M B E R<br>A S S E M B L E D  O N  W W  1 9 , 2 0 0 0 R E C T IF IE R<br>IN  T H E  A S S E M B L Y  L IN E  "C " L O G O<br>D A T E  C O D E<br>oe<br>Y E A R  0  =  2 0 0 0<br>N o t e :  "P " in  a s s e m b ly  lin e  p o s it io n A S S E M B L Y<br>in d ic a t e s  "L e a d  -  F r e e " L O T  C O D E W E E K  1 9<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

9 ~~——~~ 

9 www.irf.com © 2014 International Rectifier 

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IRFB7546PbF ~~|~~ 

## ~~TsaR~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-220|N/A|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

|**Date**|**Comment**|
|---|---|
|11/7/2014|Updated EAS (L =1mH)= 170mJ  on page 2<br>Updated note 9  “Limited by TJmax, starting TJ= 25°C, L = 1mH, RG= 50, IAS= 19A, VGS=10V” on page 2<br>Updated package outline on page 9|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

10 www.irf.com ~~=~~ 

~~_~~ 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFB7546PBF/power-mosfet-n-channel-60-v-75-a-7300-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfb7546pbf/mosfet-n-ch-60v-75a-to-220ab-3/dp/2406519)
---

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