# Power MOSFET, N Channel, 60 V, 95 A, 5900 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2406518/)

**URL**: https://novapart.co/products/IRFB7545PBF/power-mosfet-n-channel-60-v-95-a-5900-ohm-to-220ab
**SKU**: IRFB7545PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3360
**Stock**: 1000+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:95A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 125W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 95A |
| Drain Source On State Resistance | 5900µohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2406518/)

## ~~T@R Rectifier~~ 

## Strong _IR_ FET™ IRFB7545PbF ~~a~~ 

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HEXFET [® ] Power MOSFET<br>**----- End of picture text -----**<br>


## **Application** 

-  Brushed motor drive applications 

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 Brushed motor drive applications<br> BLDC motor drive applications  D VDSS  60V<br> Battery powered circuits<br> Half-bridge and full-bridge topologies  G RDS(on) typ. 4.9m <br> Synchronous rectifier applications              max  5.9m <br> Resonant mode power supplies  S<br> OR-ing and redundant power switches  ID   95A<br>b=a=<br> DC/DC and AC/DC converters<br> DC/AC inverters<br>Benefits  S<br>D<br> Improved  gate, avalanche and dynamic dV/dt ruggedness  G<br> Fully characterized capacitance and avalanche SOA<br> Enhanced body diode dV/dt and dI/dt capability    TO-220AB<br> Lead-free, RoHS compliant<br>G  D  S<br>Gate  Drain  Source<br>-——}———}——<br>**----- End of picture text -----**<br>


|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRFB7545PbF|TO-220|Tube|50|IRFB7545PbF|



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14<br>ID = 57A<br>12<br>TLE.<br>10 T J  = 125°C<br>AE<br>8 (SSE<br>6 PCE<br>4 SESE<br>TJ = 25°C<br>2 CCAP<br>4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 1.   Typical On-Resistance vs. Gate Voltage<br>)<br> <br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


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100<br>80 SLT TT<br>60<br>PN<br>~<br>40<br>EEEANE<br>20<br>EEREEN<br>0 PTELL<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Maximum Drain Current vs. Case Temperature 

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IRFB7545PbF 

## **Absolute Maximum Rating** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID @TC= 25°C|ContinuousDrainCurrent,VGS @10V|95|A|
|ID @TC= 100°C|Continuous Drain Current,VGS @10V|67||
|IDM|Pulsed Drain Current|380||
|PD @TC= 25°C|Maximum Power Dissipation|125|W|
||Linear DeratingFactor|0.83|W/°C|
|VGS|Gate-to-Source Voltage|± 20|V|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|°C|
||SolderingTemperature,for 10 seconds (1.6mm fromcase)|300||
||MountingTorque, 6-32 or M3 Screw|10 lbf·in(1.1 N·m)||



|MountingTorque, 6-32 or M3 Screw||||10 lbf·in(1.1 N·m)|||
|---|---|---|---|---|---|---|
|**Avalanche Characteristics**|||||||
|**Symbol**<br>**Parameter**||||**Max.**||**Units**|
|EAS (Thermally limited)<br>SinglePulseAvalancheEnergy ||||140||mJ|
|EAS (Thermally limited)<br>Single Pulse Avalanche Energy||||235|||
|IAR<br>Avalanche Current<br>EAR<br>Repetitive Avalanche Energy||||See Fig 15, 16, 23a, 23b||A<br>mJ|
|**Thermal Resistance**|||||||
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>1.21<br>°C/W<br>RCS<br>Case-to-Sink,Flat Greased Surface<br>0.50<br>–––<br>RJA<br>Junction-to-Ambient<br>–––<br>62<br>**Static@ TJ = 25°C(unless otherwise specified)**<br>~~—————a~~|||||||
|**Symbol**<br>**Parameter**|**Min.**|**Typ. Max. Units**|**Typ. Max. Units**|**Typ. Max. Units**<br>**Conditions**|||
|V(BR)DSS<br>Drain-to-Source Breakdown Voltage|60|–––|–––|V<br>VGS= 0V,ID= 250µA|||
|V(BR)DSS/TJBreakdown Voltage Temp. Coefficient|–––|46|––– mV/°C Reference to 25°C|––– mV/°C Reference to 25°C,I|ID= 1mA|= 1mA|
|RDS(on)<br>Static Drain-to-Source On-Resistance|–––|4.9|5.9|mVGS= 10V,ID= 57A|||
||–––|6.3|–––|VGS= 6.0V,ID= 29A|||
|VGS(th)<br>GateThresholdVoltage|2.1|–––|3.7|V<br>VDS= VGS,ID= 100µA|||
|IDSS<br>Drain-to-Source Leakage Current|–––<br>–––|–––<br>–––|1.0<br>150|µA<br>VDS=60V,VGS=0V<br>VDS=60V,VGS=0V,TJ=125°C|||
|IGSS<br>Gate-to-Source Forward Leakage<br>Gate-to-Source Reverse Leakage|–––<br>–––|–––<br>–––|100<br>-100|nA<br>VGS= 20V<br>VGS = -20V|||
|RG<br>Gate Resistance|–––|2.3|–––||||



## **Notes:** 

- Repetitive rating; pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 88µH, RG = 50, IAS = 57A, VGS =10V. 

- ISD  57A, di/dt  810A/µs, VDD  V(BR)DSS, TJ 175°C. 

- Pulse width  400µs; duty cycle  2%. 

-  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

-  R is measured at TJ approximately 90°C. 

-  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 22A, VGS =10V. 

2 

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IRFB7545PbF ~~oy~~ 

**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Min.**<br>~~a~~|**Typ. **<br>~~a~~|**Max. Units**<br>~~a~~|**Max. Units**<br>~~a~~|**Max. Units**<br>**Conditions**<br>~~a~~|
|---|---|---|---|---|---|---|
|gfs<br>~~a~~|Forward Transconductance<br>~~a~~|90<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|S<br>~~a~~|VDS= 25V,ID= 57A<br>~~a~~|
|Qg<br>~~a~~|Total Gate Charge<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|75<br>~~a~~<br>~~a~~|110<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|ID= 57A<br>VDS= 30V<br>VGS= 10V<br>~~a~~<br>~~a~~|
|Qgs|Gate-to-Source Charge|–––|19|–––|||
|Qgd<br>~~a~~|Gate-to-Drain Charge<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|24<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|||
|Qsync<br>~~a~~<br>~~a~~<br>~~ee~~|Total Gate Charge Sync.(Qg–Qgd)<br>~~a~~<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~<br>~~a~~|32<br>~~a~~<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~<br>~~a~~|||
|td(on)<br>~~ee~~|Turn-On DelayTime|–––|12|–––|ns|VDD= 30V<br>ID= 57A<br>RG= 2.7<br>VGS= 10V<br>~~ee~~|
|tr<br>~~ee~~<br>~~a~~|Rise Time<br>|–––<br>|72<br>|–––<br>|||
|td(off)<br>~~a~~|Turn-Off DelayTime<br>|–––<br>|44<br>|–––<br>|||
|tf<br>~~So~~<br>~~ee~~|Fall Time<br>~~So~~<br>~~ee~~|–––<br>~~So~~<br>~~ee~~|43<br>~~So~~|–––<br>~~So~~|||
|Ciss<br>~~So~~<br>~~ee~~|Input Capacitance<br>~~So~~<br>~~ee~~|–––<br>~~So~~<br>~~ee~~|4010<br>~~So~~|–––<br>~~So~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7<br>~~ee~~|
|Coss<br>~~ee~~|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|370|–––|||
|Crss<br>~~ee~~<br>~~PR~~|Reverse Transfer Capacitance<br>~~ee~~<br>|–––<br>~~ee~~<br>|230<br>|–––<br>|||
|Coss eff.(ER)<br>~~ee~~<br>~~PR~~|Effective Output Capacitance<br>(Energy Related)<br>~~ee~~<br>|–––<br>~~ee~~<br>|370<br>|–––<br>||VGS= 0V, VDS = 0V to 48V<br>~~ee~~|
|Coss eff.(TR)<br>~~PRa~~|Output Capacitance(Time Related)<br>~~a~~|–––<br>~~a~~|470<br>~~a~~|–––<br>~~a~~||VGS= 0V,VDS = 0V to 48V|
|**Diode Characteristics**<br>~~GO~~|||||||
|**Symbol**<br>~~eG~~|**Parameter **<br>~~eG~~|**Min.**<br>~~eG~~<br>~~GO~~|**Typ. **<br>~~eG~~<br>~~GO~~|**Max.**<br>~~eG~~<br>~~GO~~|**Units**<br>~~eG~~<br>~~GO~~|**Conditions**<br>~~eG~~|
|IS<br>~~fp~~|Continuous Source Current<br>(BodyDiode)<br>~~fp~~|–––<br>~~GO~~<br>~~fp~~|–––<br>~~GO~~<br>~~fp~~|95<br>~~GO~~<br>~~fp~~|A<br>~~GO~~<br>~~fp~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>D<br>S<br>G<br>~~fp~~|
|ISM<br>~~fp~~|Pulsed Source Current<br>(Body Diode)<br>~~fp~~|–––<br>~~fp~~|–––<br>~~fp~~|380<br>~~fp~~|||
|VSD<br>~~a~~|Diode Forward Voltage<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|1.2<br>~~a~~|V<br>~~a~~|TJ= 25°C,IS= 57A,VGS= 0V<br>~~a~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|12<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|V/ns T<br>~~a~~<br>~~a~~|V/ns TJ= 175°C,IS= 57A,VDS= 60V<br>~~a~~<br>~~a~~|
|trr<br>~~ee~~|Reverse Recovery Time<br>~~ee~~|–––<br>~~ee~~|33<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~|TJ =25°CVDD= 51V<br>TJ =125°CIF= 57A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~ee~~|37<br>~~ee~~|–––<br>~~ee~~|||
|Qrr<br>~~ee~~<br>~~eee~~|Reverse Recovery Charge<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|36<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|nC<br>~~ee~~<br>~~eee~~||
|||–––<br>~~eee~~|48<br>~~eee~~|–––<br>~~eee~~|||
|IRRM<br>~~eee~~<br>~~ee~~|Reverse Recovery Current<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~|2.0<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~|A<br>~~eee~~<br>~~ee~~||



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IRFB7545PbF ~~a~~ 

## ~~IGOR~~ 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>100 7.0V 7.0V<br>6.0V 6.0V<br>5.5V 100 5.5V<br>5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>10<br>4.5V<br>10<br>4.5V<br>1<br>Tj = 2560µs P ° CULSE WIDTH Tj = 175°C60µs PULSE WIDTH<br>0.1 =) 1 AH<br>0.1 1 10 100 1000 0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 2.4<br>ID = 57A<br>VGS = 10V<br>2.0<br>100 TTTHo a<br>TJ = 175°C 1.6<br>10<br>nn//4n0 TJ = 25°C 1.2 Mt<br>1 Tha SURRR DZ AGnaE<br>0.8<br>VDS = 25V<br>| PPA TEELE<br>60µs PULSE WIDTH<br>0.1 0.4<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100120140160180<br>Eiinee TUTTE<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 14.0<br>VGS   = 0V,       f = 1 MHZ ID = 57A<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>12.0<br>C rss    = C gd  VDS= 48V<br>Coss   = Cds + Cgd VDS= 30V<br>10.0<br>10000 VDS= 12V<br>_ v7<br>8.0<br>—ee Ciss { Yr -<br>6.0<br>1000 C oss al ai A<br>4.0<br>Crss<br>eT 2.0 ap==/ Annee<br>it AsnnnnnnE<br>100 Billie 0.0 7<br>1 10 100 0 10 20 30 40 50 60 70 80 90 100<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

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## ~~TéaR~~ 

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1000<br>Se<br>100 T J  = 175°C<br>T = 25°C<br>J<br>10 a]<br>V GS  = 0V<br>1.0<br>0.2 0.6 1.0 1.4 1.8<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

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80<br>Id = 1.0mA<br>78<br>PTT TE<br>76 EEE ELLLL LAT<br>74<br>tit at<br>ELE<br>72 ALL LL<br>70 LLLALLE EEL<br>68<br>EDZERRRRREEE<br>ALLLLLLEEL<br>66<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Temperature ( °C )<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

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100µsec<br>1 m sec<br>100<br>ne aaa<br>10<br>OPERATION<br>IN THIS<br>AREA<br>LIMITED BY<br>RSS<br>RDS(on) 10msec<br>1<br>Tc = 25°C DC<br>Tj = 175°C<br>Single Pulse<br>0.1<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>-10 0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 10.** Maximum Safe Operating Area 

**Fig 12.** Typical Coss Stored Energy 

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16<br>14 Vgs = 5.5V<br>Vgs = 6.0V<br>Loy<br>Vgs = 7.0V<br>12 Vgs = 8.0V<br>Vgs = 10V SO<br>10<br>8<br>aeas<a<br>6 —T+ | Se<br>——————<br>4 =e LL<br>0 40 80 120 160 200<br>ID, Drain Current (A)<br>)<br><br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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IRFB7545PbF ~~or~~ 

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10<br>1<br>D = 0.50<br>0.20<br>0.10<br>0.1<br>0.05<br>0.02<br>0.01<br>0.01<br>See Za0l SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 ee 1E-005 iw 0.0001 wlll 0.001 IM 0.01 sn 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>BE S| |<br>100<br>a<br>10<br>Gtl i me !EL<br>ae Allowed avalanche Current vs avalanche<br>1<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>occ ETli<br>0.1<br>1.0E-06 ‘omecooml 1.0E-05 1.0E-04 i 1.0E-03 1.0E-02<br>tav (sec)<br>Fig 15.  Avalanche Current vs. Pulse Width<br>150<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>BOTTOM   1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>125 ID = 57A 1.Avalanche failures assumption:<br>NL Purely a thermal phenomenon and failure occurs at a<br>temperature far in excess of Tjmaxjmax. This is validated for every<br>100 part type.<br>2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not<br>   exceeded.<br>75<br>NSE 3. Equation below based on circuit and waveforms shown in Figures<br>    23a, 23b.<br>50 4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>PINON 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br> increase during avalanche).<br>25 6. Iav = Allowable avalanche current.<br>LET ANNE 7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax<br>    (assumed as 25°C in Figure 15, 16).<br>LET<br>0 tav = Average time in avalanche.<br>TT PNG<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


   - Purely a thermal phenomenon and failure occurs at a 

   - temperature far in excess of Tjmaxjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

- EAS (AR) = PD (ave)·tav 

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IRFB7545PbF<br>TOR<br>4.0 12<br>IF = 38A<br>3.5 TFELLEOLL 10 V R = 51V 51V Te<br>TJ = 25°C<br>3.0 PSPS 8 T J = 125°C 125°C°CC te<br>2.5<br>TT SSSECLER a<br>ID = 100µA 6<br>2.0<br>I D  = 250µA C7 XT NG Pad<br>ID = 1.0mA 4<br>1.5<br>ID = 1.0A<br>1.0 ax 2 | |<br>BEBEAN At tt tt<br>0.5 0<br>COE Pty Tt<br>-75 -50 -25 0 25 50 75 100 125 150 175 0 200 400 600 800 1000<br>TJ , Temperature ( °C ) diF /dt (A/µs)<br>IRRM (A)<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
12<br>IF = 38A<br>10 V R = 51V 51V<br>TJ = 25°C<br>8 T J = 125°C 125°C°CC te<br>a<br>6<br>Pad<br>4<br>2 | |<br>At tt tt<br>0<br>Pty Tt<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

**Fig 18.** Typical Recovery Current vs. dif/dt 

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12 200<br>IF = 57A IF = 38A<br>10 V R = 51V VR = 51V<br>TJ = 25°C nn 150 T J = 25°C ae<br>8 T J = 125°C TJ = 125°C<br>aaa EEZ<br>6 100<br>pam aA<br>4<br>cane er<br>50<br>A | | | ime |<br>2<br>SE EIe Ea<br>0 0<br>0 200 400 600 800 1000 0 200 400 600 800 1000<br>diF /dt (A/µs) diF /dt (A/µs)<br>IRRM (A) QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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200<br>IF = 57A<br>VR = 51V<br>150 T J = 25°C<br>TJ = 125°C<br>100 | HEP<br>an<br>50<br>Oaaan<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>tp 0.01<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs(th) '<br>l gp l a p i g pig<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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IRFB7545PbF 

## **TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

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E X A M P L E : T H IS  IS  A N  IR F 1 0 1 0<br>L O T  C O D E  1 7 8 9 IN T E R N A T IO N A L P A R T  N U M B E R<br>A S S E M B L E D  O N  W W  1 9 , 2 0 0 0 R E C T IF IE R<br>IN  T H E  A S S E M B L Y  L IN E  "C " L O G O<br>D A T E  C O D E<br>Y E A R  0  =  2 0 0 0<br>N o t e :  "P " in  a s s e m b ly  lin e  p o s it io n A S S E M B L Y<br>in d ic a t e s  "L e a d  -  F r e e " L O T  C O D E W E E K  1 9<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

9 

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|**Qualification Information† **|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**<br>**RoHS Compliant**|TO-220|N/A|
||Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

|**Date**|**Comment**|
|---|---|
|11/5/2014|Updated EAS (L =1mH)= 235mJ  on page 2<br>Updated note 8  “Limited by TJmax, starting TJ= 25°C, L = 1mH, RG= 50, IAS= 22A, VGS=10V”.  on page 2<br>Updated package outline on page 9|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ Submit Datasheet Feedback                    November 5, 2014 ~~_~~ 

10 www.irf.com        © 2014 International Rectifier ~~=~~ 

10 www.irf.com        © 2014 International Rectifier 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFB7545PBF/power-mosfet-n-channel-60-v-95-a-5900-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfb7545pbf/mosfet-n-ch-60v-95a-to-220ab-3/dp/2406518)
---

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