# Power MOSFET, N Channel, 60 V, 110 A, 5100 µohm, TO-220AB, Through Hole
**URL**: https://novapart.co/products/IRFB7540PBF/power-mosfet-n-channel-60-v-110-a-5100-ohm-to
**SKU**: IRFB7540PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4100
**Stock**: 200+
**Lead Time**: 2 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 160W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 110A |
| Drain Source On State Resistance | 5100µohm |
| Gate Source Threshold Voltage Max | 3.7V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2406517/)
Strong _IR_ FET™ IRFB7540PbF IRFS7540PbF IRFSL7540PbF
## International
HEXFET[® ] Power MOSFET
## **Application**
- Brushed Motor drive applications
**==> picture [533 x 192] intentionally omitted <==**
**----- Start of picture text -----**
Brushed Motor drive applications
BLDC Motor drive applications D VDSS 60V
Battery powered circuits
Half-bridge and full-bridge topologies G RDS(on) typ. 4.2m
Synchronous rectifier applications max 5.1m
Resonant mode power supplies S
OR-ing and redundant power switches ID 110A
Aa=a=
DC/DC and AC/DC converters
DC/AC Inverters
D D
Benefits S
D S S
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness G G G [D ]
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability TO-220AB D2Pak TO-262
IRFB7540PbF IRFS7540PbF IRFSL7540PbF
**----- End of picture text -----**
- Lead-Free, RoHS Compliant
|**G**|**D**|**S**|
|---|---|---|
|Gate|Drain|Source|
|||**Standard Pack**|**Standard Pack**||
|---|---|---|---|---|
|**Base part number**|**Package Type**|**Form**|**Quantity**|**Orderable Part Number**|
|IRFB7540PbF|TO-220|Tube|50|IRFB7540PbF|
|IRFSL7540PbF|TO-262|Tube|50|IRFSL7540PbF|
|||Tube|50|IRFS7540PbF|
|IRFS7540PbF|D2-Pak|Tape and Reel Left|800|IRFS7540TRLPbF|
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14
ID = 65A
12
(EEE
10
ALT ttt Yt
TJ = 125°C
8 WWE |
6
4 PNETAtt [TTT]
TJ = 25°C
2 Lili hh
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
)
RDS(on), Drain-to -Source On Resistance (m
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120
100
ea
80
Nee
60 PELE
40 Pt |LIN
N ES
20 |
0 P tf || f| t | ify
25 50 75 100 125 150 175
TC , Case Temperature (°C)
ID, Drain Current (A)
**----- End of picture text -----**
**Fig 1.** Typical On-Resistance vs. Gate Voltage **Fig 2.** Maximum Drain Current vs. Case Temperature
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 ~~a~~
IRFB/S/SL7540PbF
## **Absolute Maximum Rating**
|**Absolute Maximum Rating**||||||||
|---|---|---|---|---|---|---|---|
|**Symbol**
**Parameter**||||**Max.**|||**Units**|
|ID @TC= 25°C
Continuous Drain Current,VGS @10V|10V|||110||||
|ID @TC= 100°C
Continuous Drain Current,VGS @10V|10V|||80|80||A|
|IDM
Pulsed Drain Current||||430||||
|PD @TC= 25°C
Maximum Power Dissipation||||160|||W|
|Linear DeratingFactor||||1.1|||W/°C|
|VGS
Gate-to-Source Voltage||||± 20|||V|
|TJ
TSTG
Operating Junction and
Storage Temperature Range||||-55 to + 175|||°C|
|Soldering Temperature, for 10 seconds (1.6mm from case)|||Soldering Temperature, for 10 seconds (1.6mm from case)|300||||
|MountingTorque, 6-32 or M3 Screw||||10 lbf·in(1.1 N·m)||||
|**Avalanche Characteristics**||||||||
|EAS (Thermally limited)
SinglePulseAvalancheEnergy
180
mJ
EAS (Thermally limited)
Single Pulse Avalanche Energy
313
IAR
Avalanche Current
See Fig 15, 16, 23a, 23b
A
EAR
Repetitive Avalanche Energy
mJ
**Thermal Resistance**
**Symbol**
**Parameter**
**Typ.**
**Max.**
**Units**
~~—SSSS=EE~~||||||||
|RJC
Junction-to-Case||||–––|0.95|||
|RCS
Case-to-Sink,Flat Greased Surface(TO-220)
RJA
Junction-to-Ambient(TO-220)||||0.50
–––|–––
62||°C/W|
|RJA
Junction-to-Ambient(PCB Mount) (D2Pak) ||||–––|40|||
|**Static @ TJ = 25°C (unless otherwise specified)**||||||||
|**Symbol**
**Parameter**|**Min.**|**Typ. Max. Units**|**Typ. Max. Units**|**Typ. Max. Units**|**Conditions**|||
|V(BR)DSS
Drain-to-Source Breakdown Voltage|60|–––|–––|V
VGS= 0V,ID= 250µA||||
|V(BR)DSS/TJBreakdown Voltage Temp. Coefficient|–––|48|––– mV/°C Reference to 25°C|––– mV/°C Reference to 25°C,I||ID= 1mA|= 1mA|
|RDS(on)
Static Drain-to-Source On-Resistance|–––|4.2|5.1|mVGS= 10V,ID= 65A||||
||–––|5.4|–––|VGS= 6.0V,ID= 33A||||
|VGS(th)
GateThresholdVoltage|2.1|–––|3.7|V
VDS= VGS,ID= 100µA||||
|IDSS
Drain-to-Source Leakage Current|–––
–––|–––
–––|1.0
150|µA
VDS =60V, VGS =0V
VDS=60V,VGS=0V,TJ=125°C||||
|IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage|–––
–––|–––
–––|100
-100|nA
VGS= 20V
VGS = -20V||||
|RG
Gate Resistance|–––|2.2|–––|||||
## **Notes:**
- Repetitive rating; pulse width limited by max. junction temperature.
- Limited by TJmax, starting TJ = 25°C, L = 86µH, RG = 50, IAS = 65A, VGS =10V.
- ISD 65A, di/dt 1130A/µs, VDD V(BR)DSS, TJ 175°C.
- Pulse width 400µs; duty cycle 2%.
- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
- R is measured at TJ approximately 90°C.
- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
- Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 25A, VGS =10V.
2
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~~IR~~
IRFB/S/SL7540PbF ~~SS~~
## **Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
|**Symbol**
~~es~~
~~a~~|**Parameter**
~~es~~|**Min.**
~~es~~|**Typ. **
~~es~~|**Max. Units**
~~es~~
~~OO~~|**Max. Units**
~~es~~
~~OO~~|**Max. Units**
**Conditions**
~~es~~|
|---|---|---|---|---|---|---|
|gfs
~~a~~|Forward Transconductance|110|–––|–––
~~OO~~|S
~~OO~~|VDS= 10V,ID= 65A|
|Qg
~~a~~|Total Gate Charge|–––|88|130|nC|ID= 65A
VDS= 30V
VGS= 10V|
|Qgs|Gate-to-Source Charge|–––|22|–––|||
|Qgd
~~a~~
~~es~~|Gate-to-Drain Charge|–––|28|–––|||
|Qsync
~~a~~
~~es~~
~~es~~|Total Gate Charge Sync.(Qg–Qgd)|–––|60|–––|||
|td(on)
~~es~~
~~es~~
~~ee~~|Turn-On DelayTime
~~ee~~|–––
~~ee~~|12
~~ee~~|–––
~~ee~~|ns|VDD= 30V
ID= 65A
RG= 2.7
VGS= 10V
~~ee~~|
|tr
~~es~~
~~ee~~|Rise Time
~~ee~~|–––
~~ee~~|76
~~ee~~|–––
~~ee~~|||
|td(off)
~~ee~~|Turn-Off DelayTime
~~ee~~|–––
~~ee~~|58
~~ee~~|–––
~~ee~~|||
|tf
~~es~~
~~a~~|Fall Time|–––|56|–––|||
|Ciss
~~es~~
~~a~~|Input Capacitance|–––|4555|–––|pF
~~es~~|VGS= 0V
VDS= 25V
ƒ= 1.0MHz, See Fig.7
~~ee~~|
|Coss
~~es~~
~~a~~|Output Capacitance|–––|415|–––|||
|Crss
~~a~~|Reverse Transfer Capacitance|–––|270|–––|||
|Coss eff.(ER)
~~a~~
~~|~~
~~GO~~|Effective Output Capacitance
(Energy Related)
~~|~~
~~GO~~|–––
~~|~~
~~GO~~|430
~~|~~
~~GO~~|–––
~~|~~
~~GO~~||VGS= 0V, VDS = 0V to 48V
~~ee~~|
|Coss eff.(TR)
~~GO~~|Output Capacitance(Time Related)
~~GO~~|–––
~~GO~~|550
~~GO~~|–––
~~GO~~||VGS= 0V,VDS = 0V to 48V|
|**Diode Characteristics**
~~GO es~~
~~esOD~~|||||||
|**Symbol**
~~es~~|**Parameter **
~~OD~~|**Min.**
~~OD~~|**Typ. **
~~OD~~|**Max.**
~~OD~~|**Units**
~~OD~~|**Conditions**
~~OD~~|
|IS
~~es~~
~~a~~|Continuous Source Current
(BodyDiode)
~~OD~~
~~a~~|–––
~~OD~~
~~a~~|–––
~~OD~~
~~a~~|110
~~OD~~
~~a~~|A
~~OD~~
~~a~~|MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
S
G
~~OD~~
~~a~~|
|ISM
~~a~~|Pulsed Source Current
(Body Diode)
~~a~~|–––
~~a~~|–––
~~a~~|430
~~a~~|||
|VSD
~~a~~
~~po~~|Diode Forward Voltage
~~a~~|–––
~~a~~|–––
~~a~~|1.2
~~a~~|V
~~a~~|TJ= 25°C,IS= 65A,VGS= 0V
~~a~~|
|dv/dt
~~po~~|Peak Diode Recoverydv/dt|–––|11|–––|V/ns T|V/ns TJ= 175°C,IS= 65A,VDS= 60V|
|trr
~~po~~
~~a ee~~|Reverse Recovery Time
~~ee~~|–––
~~ee~~|33
~~ee~~|–––
~~ee~~|ns
~~ee~~|TJ =25°CVDD= 51V
TJ =125°CIF= 65A,
TJ =25°Cdi/dt = 100A/µs
TJ =125°C
TJ= 25°C|
|||–––
~~ee~~|37
~~ee~~|–––
~~ee~~|||
|Qrr
~~a ee~~
~~pf~~|Reverse Recovery Charge
~~ee~~
~~pf~~|–––
~~ee~~|36
~~ee~~|–––
~~ee~~|nC
~~ee~~||
|||–––|47|–––|||
|IRRM
~~pf~~
~~a~~|Reverse Recovery Current
~~pf~~|–––|1.9|–––|A||
3 www.irf.com ~~=—_~~
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IRFB/S/SL7540PbF
## ~~IeR~~
**==> picture [540 x 737] intentionally omitted <==**
**----- Start of picture text -----**
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
100 7.0V 7.0V
6.0V 6.0V
5.5V 100 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
10
4.5V
10
4.5V
1
60µs PULSE WIDTH 60µs PULSE WIDTH
Tj = 25°C Tj = 175°C
0.1 1
0.1 1 10 100 1000 0.1 1 10 100 1000
VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics Fig 4. Typical Output Characteristics
1000 2.4
ID = 65A
VGS = 10V
2.0
100
ty TJ = 175°C 1.6 Pee
10
TJ = 25°C 1.2
1 7 INIT 2411
/ 0.8 ee
VDS = 25V
60µs PULSE WIDTH
0.1 0.4
2.0 EAiaoe 3.0 4.0 5.0 6.0 7.0 8.0 -60 SOUDDNRERRE -40 -20 0 20 40 60 80 100120140160180
VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)
Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature
100000 14.0
VGS = 0V, f = 1 MHZ ID = 65A
Ciss = C gs + Cgd, C ds SHORTED
12.0
C rss = C gd VDS= 48V
Coss = Cds + Cgd VDS= 30V
10.0
10000 VDS= 12V
— Ciss EA 8.0 ‘i
6.0
1000 Coss
Crss 4.0
Sm = FZ
2.0
100 [TH 0.0 eliij
1 10 100 0 20 40 60 80 100 120
|
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)
Timp] = ZEEE
Fig 8. Typical Gate Charge vs.
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Gate-to-Source Voltage
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014
=°°”°@—™™—i
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
RDS(on) , Drain-to-Source On Resistance (Normalized)
C, Capacitance (pF)
ID, Drain-to-Source Current (A)
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IRFB/S/SL7540PbF ~~Orr~~
## ~~LR~~
**==> picture [491 x 438] intentionally omitted <==**
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1000
100µsec
1 msec
100
y ace
100 TJ = 175°C
OPERATION
10
IN THIS
AREA
LIMITED BY
10 aa T J = 25°C PRY RDS(on)
1
10msec
Tc = 25°C
V GS = 0V Tj = 175°CSingle Pulse DC
1.0 0.1
0.2 0.6 1.0 1.4 1.8 0.1 1 10
ff nana
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
78 0.8
Id = 1.0mA
0.7
76
ty
0.6
74 RORRRRED ZAR
0.5
72 TAT 0.4
0.3
70
LTTE
0.2
68
0.1
A
66 ACL 0.0
-60 -40 -20 0 20 40 60 80 100120140160180 0 10 20 30 40 50 60
TJ , Temperature ( °C )
VDS, Drain-to-Source Voltage (V)
ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A)
Energy (µJ)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
**----- End of picture text -----**
**Fig 11.** Drain-to-Source Breakdown Voltage
**Fig 12.** Typical Coss Stored Energy
**==> picture [208 x 205] intentionally omitted <==**
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14
12
- {| | |dy,
Vgs = 5.5V
Vgs = 6.0V
10 Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
8 mnN=
6 |PRES
4 =—— ae
2
ett tt
0 40 80 120 160 200
ID, Drain Current (A)
)
m
RDS(on), Drain-to -Source On Resistance (
**----- End of picture text -----**
**Fig 13.** Typical On-Resistance vs. Drain Current
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 ~~ea~~
~~IvaR~~
IRFB/S/SL7540PbF ~~a~~
**==> picture [452 x 440] intentionally omitted <==**
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10
1
BU D = 0.50 A A)
0.20
0.1 0.10
0.05
0.02
0.01
0.01
SINGLE PULSE Notes:
Soe ( THERMAL RESPONSE ) il EO 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 Se 1E-005 in 0.0001 call 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart = 25°C (Single Pulse)
100
oc ——
10
Mn eelliomee
BERL Allowed avalanche Current vs avalanche
1
pulsewidth, tav, assuming j = 25°C and
a
Tstart = 150°C.
[beer
0.1
1.0E-06 1.0E-05 1.0E-04 LUTTE 1.0E-03 ETT 1.0E-02
tav (sec)
Thermal Response ( Z thJC ) °C/W
Avalanche Current (A)
**----- End of picture text -----**
**Fig 15.** Avalanche Current vs. Pulse Width
**==> picture [209 x 201] intentionally omitted <==**
**----- Start of picture text -----**
200
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 65A
150
Nt
100
SNOUT
50
NAT
TTT
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
EAR , Avalanche Energy (mJ)
**----- End of picture text -----**
**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)**
1.Avalanche failures assumption:
- Purely a thermal phenomenon and failure occurs at a
- temperature far in excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15).
- tav = Average time in avalanche.
- D = Duty cycle in avalanche = tav ·f
- ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
- Iav = 2T/ [1.3·BV·Zth]
**Fig 16.** Maximum Avalanche Energy vs. Temperature
EAS (AR) = PD (ave)·tav
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 ~~ea~~
**==> picture [540 x 234] intentionally omitted <==**
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IRFB/S/SL7540PbF
TIGR
4.0 12
IF = 43A
3.5 10 V R = 51V 51V
AST TT
TJ = 25°C
3.0 B=2.5
| ID = 100µA SSA 6 eam
2.0 I D = 250µA
ID = 1.0mA 4
1.5 TNS aT
ID = 1.0A ACL | INSNN i
1.00.5 LE ELELELLLALSEEEEAN 20 eo]BannfffBannffffff
-75 -50 -25 0 25 50 75 100 125 150 175 0 200 400 600 800 1000
TJ , Temperature ( °C )
VGS(th), Gate threshold Voltage (V)
IRRM (A)
**----- End of picture text -----**
**==> picture [210 x 200] intentionally omitted <==**
**----- Start of picture text -----**
12
IF = 43A
10 V R = 51V 51V
TT
TJ = 25°C
8 T J = 125°C 125°C°CC are
6 eam
4
aT
i
020 eo]BannfffBannffffff
0 200 400 600 800 1000
diF /dt (A/µs)
IRRM (A)
**----- End of picture text -----**
**Fig 17.** Threshold Voltage vs. Temperature
**==> picture [210 x 201] intentionally omitted <==**
**----- Start of picture text -----**
12
IF = 65A
10 V R = 51V
TJ = 25°C
8 T J = 125°C pf pe
eae
6
4
paPT
tt
2
ATEL
0
0 200 400 600 800 1000
diF /dt (A/µs)
IRRM (A)
**----- End of picture text -----**
**Fig 18.** Typical Recovery Current vs. dif/dt
**==> picture [217 x 201] intentionally omitted <==**
**----- Start of picture text -----**
200
IF = 43A
VR = 51V
150 T J = 25°C
ERE
TJ = 125°C
Bae
100
LWA
|
50
ae
0
0 200 400 600 800 1000
diF /dt (A/µs)
QRR (nC)
**----- End of picture text -----**
**Fig 19.** Typical Recovery Current vs. dif/dt
**Fig 20.** Typical Stored Charge vs. dif/dt
**==> picture [217 x 200] intentionally omitted <==**
**----- Start of picture text -----**
200
IF = 65A
VR = 51V
150 T J = 25°C
TJ = 125°C
100 | HES
Sa
50
aaa
0
0 200 400 600 800 1000
diF /dt (A/µs)
QRR (nC)
**----- End of picture text -----**
**Fig 21.** Typical Stored Charge vs. dif/dt
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IRFB/S/SL7540PbF ~~ee~~
**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs
**==> picture [157 x 87] intentionally omitted <==**
**----- Start of picture text -----**
15V
VDS L DRIVER
R G D.U.T +
- [V][DD]
IAS
20V
tp 0.01
**----- End of picture text -----**
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V(BR)DSS
< tp >
IAS
**----- End of picture text -----**
**Fig 23a.** Unclamped Inductive Test Circuit
**Fig 23b.** Unclamped Inductive Waveforms
**Fig 24a.** Switching Time Test Circuit
**==> picture [21 x 8] intentionally omitted <==**
**----- Start of picture text -----**
VDD
**----- End of picture text -----**
**Fig 24b.** Switching Time Waveforms
**==> picture [172 x 117] intentionally omitted <==**
**----- Start of picture text -----**
Id
Vds
Vgs
Vgs(th) '
l gp l a p i g pig
Qgs1 Qgs2 Qgd Qgodr
**----- End of picture text -----**
**Fig 25a.** Gate Charge Test Circuit
**Fig 25b.** Gate Charge Waveform
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IRFB/S/SL7540PbF ~~SS~~
## ~~IR~~
## **TO-220AB Package Outline** (Dimensions are shown in millimeters (inches))
## **TO-220AB Part Marking Information**
**==> picture [487 x 94] intentionally omitted <==**
**----- Start of picture text -----**
E X A M P L E : T H IS IS A N IR F 1 0 1 0
L O T C O D E 1 7 8 9 IN T E R N A T IO N A L P A R T N U M B E R
A S S E M B L E D O N W W 1 9 , 2 0 0 0 R E C T IF IE R
IN T H E A S S E M B L Y L IN E "C " L O G O
D A T E C O D E
Y E A R 0 = 2 0 0 0
N o t e : "P " in a s s e m b ly lin e p o s it io n A S S E M B L Y
in d ic a t e s "L e a d - F r e e " L O T C O D E W E E K 1 9
L IN E C
**----- End of picture text -----**
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 ~~=©|™+°\—°°”~~
IRFB/S/SL7540PbF ~~SS~~
## ~~IR~~
## **TO-262 Package Outline** (Dimensions are shown in millimeters (inches)
## **TO-262 Part Marking Information**
**==> picture [338 x 225] intentionally omitted <==**
**----- Start of picture text -----**
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789 PART NUMBER
INTERNATIONAL
ASSEMBLED ON WW 19, 1997
RECTIFIER
IN THE ASSEMBLY LINE "C" LOGO
DATE CODE
YEAR 7 = 1997
ASSEMBLY
LOT CODE WEEK 19
LINE C
ll
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
P = DESIGNATES LEAD-FREE
ASSEMBLY
LOT CODE PRODUCT (OPTIONAL)
YEAR 7 = 1997
WEEK 19
A = ASSEMBLY SITE CODE
**----- End of picture text -----**
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 ~~=©|™+°\—°°”~~
~~IR~~
IRFB/S/SL7540PbF ~~SS~~
**D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches))
## **D[2] Pak (TO-263AB) Part Marking Information**
**==> picture [296 x 191] intentionally omitted <==**
**----- Start of picture text -----**
THIS IS AN IRF530S WITH
PART NUMBER
LOT CODE 8024 INTERNATIONAL
ASSEMBLED ON WW 02, 2000 RECTIFIER F530S
IN THE ASSEMBLY LINE "L" LOGO
DATE CODE
YEAR 0 = 2000
ASSEMBLY
LOT CODE WEEK 02
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER F530S
LOGO DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
ASSEMBLY
YEAR 0 = 2000
LOT CODE
WEEK 02
A = ASSEMBLY SITE CODE
**----- End of picture text -----**
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 ~~=©|™+°\—°°”~~
~~TGR~~
IRFB/S/SL7540PbF ~~nn~~
## **D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches))
**==> picture [383 x 161] intentionally omitted <==**
**----- Start of picture text -----**
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
3.90 (.153) 1.50 (.059) 0.368 (.0145)
0.342 (.0135)
FEED DIRECTION 1.85 (.073) 11.60 (.457)
1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)
**----- End of picture text -----**
FEED DIRECTION
**==> picture [374 x 187] intentionally omitted <==**
**----- Start of picture text -----**
13.50 (.532) 27.40 (1.079)
12.80 (.504) 23.90 (.941)
4
330.00 60.00 (2.362)
(14.173) MIN.
MAX.
30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418.
26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB. 3
**----- End of picture text -----**
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 ~~ea~~
~~I6aR~~
IRFB/S/SL7540PbF ~~ee~~
## **Qualification Information[† ]**
|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial
(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-220|N/A|
||D2Pak|MSL1|
||TO-262|N/A|
|**RoHS Compliant**|Yes||
- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
- †† Applicable version of JEDEC standard at the time of product release.
## **Revision History**
|**Date**|**Comments**|
|---|---|
|11/6/2014|
Updated EAS (L =1mH)= 313mJ on page 2
Updated note 8 “Limited by TJmax, starting TJ= 25°C, L = 1mH, RG= 50, IAS= 25A, VGS=10V”. on page 2
Updatedpackage outline onpage 9,10,11.|
**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ Submit Datasheet Feedback November 6, 2014 ~~_~~
13 ~~.~~
www.irf.com © 2014 International Rectifier
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
## Links
- [View this product on Novapart](https://novapart.co/products/IRFB7540PBF/power-mosfet-n-channel-60-v-110-a-5100-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfb7540pbf/mosfet-n-ch-60v-110a-to-220ab/dp/2406517)
---
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