# Power MOSFET, N Channel, 60 V, 195 A, 2400 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2406515/)

**URL**: https://novapart.co/products/IRFB7534PBF/power-mosfet-n-channel-60-v-195-a-2400-ohm-to
**SKU**: IRFB7534PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7060
**Stock**: 500+
**Lead Time**: 120 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 294W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 195A |
| Drain Source On State Resistance | 2400µohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2406515/)

Strong _IR_ FET™ IRFB7534PbF IRFS7534PbF IRFSL7534PbF 

## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

- Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC Inverters 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free, RoHS Compliant 

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HEXFET [® ] Power MOSFET<br>D VDSS  60V<br>RDS(on) typ. 2.0m <br>G             max  2.4m <br>ID (Silicon Limited)  232A <br>S<br>== ID (Package Limited) 195A<br>D  D<br>S<br>D  S  S<br>G  G<br>G  [D ]<br>TO-220AB  D [2] Pak  TO-262<br>IRFB7534PbF  IRFS7534PbF  IRFSL7534PbF<br>**----- End of picture text -----**<br>


**G D S** Gate Drain Source ~~——_} —}—_~~ 

|||~~——_}~~|**G**<br>Gate<br>~~——_}~~|**D**<br>**S**<br>Drain<br>Source<br>~~——_} —}—_~~|
|---|---|---|---|---|
|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|||**Form**|**Quantity**||
|IRFB7534PbF|TO-220|Tube|50|IRFB7534PbF|
|IRFSL7534PbF|TO-262|Tube|50|IRFSL7534PbF|
|IRFS7534PbF|D2-Pak|Tube<br>Tape and Reel Left|50<br>800|IRFS7534PbF<br>IRFS7534TRLPbF|



**==> picture [206 x 207] intentionally omitted <==**

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15<br>ID = 100A<br>12<br>WWE<br>9<br>AWE EEL<br>6 WELT EE<br>TJ = 125°C<br>3<br>eeeeee TJ = 25°C e<br>0 | Cro<br>2 4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**==> picture [212 x 201] intentionally omitted <==**

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250<br>Limited by package<br>200<br>eae<br>150<br>PTI<br>100 EReaNe<br>50<br>PTT TEN<br>ERR<br>0<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Maximum Drain Current vs. Case Temperature 

1 

2017-04-05 

IRFB/S/SL7534PbF ~~yy~~ 

## ~~Cinfineon~~ 

## **Absolute Maximum Rating** 

|**Symbol**|**Parameter**||**Max.**|**Max.**|**Units**|
|---|---|---|---|---|---|
|ID @TC= 25°C|Continuous Drain Current,VGS @10V(Silicon Limited)||232|||
|ID @TC= 100°C<br>ID @TC= 25°C|Continuous Drain Current,VGS @10V(Silicon Limited)<br>Continuous Drain Current,VGS @10V(Wire Bond Limited)||164<br>195||A|
|IDM|Pulsed Drain Current||944*|||
|PD @TC= 25°C|Maximum Power Dissipation||294||W|
||Linear DeratingFactor||1.96||W/°C|
|VGS|Gate-to-Source Voltage||± 20||V|
|TJ<br>TSTG|Operating Junction and<br>StorageTemperatureRange|-55  to + 175|-55  to + 175||°C|
||SolderingTemperature,for 10 seconds (1.6mm fromcase)||300|||
||MountingTorque, 6-32 or M3 Screw|10 lbf·in(1.1 N·m)||||
|**Avalanche Characteristics**||||||
|EAS (Thermally limited)<br>EAS (Thermally limited)|Single Pulse Avalanche Energy<br>SinglePulseAvalancheEnergy ||373<br>775||mJ|
|IAR<br>EAR|Avalanche Current<br>Repetitive Avalanche Energy|See Fig 15, 16, 23a, 23b|||A<br>mJ|
|**Thermal Resistance**||||||
|**Symbol**|**Parameter**|**Typ.**||**Max.**|**Units**|
|RJC|Junction-to-Case|–––||0.51||
|RCS<br>RJA|Case-to-Sink,Flat Greased Surface<br>Junction-to-Ambient(TO-220)|0.50<br>–––||–––<br>62|°C/W|
|RJA|Junction-to-Ambient(PCB Mount) (D2-Pak)|–––||40||



|**Symbol**|**Parameter**|**Min.**|**Typ. Max.**|**Typ. Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|60|–––|–––|V|VGS= 0V,ID= 250µA|
|V(BR)DSS/TJ|JBreakdown Voltage Temp. Coefficient|–––|24|–––|mV/°C Reference to 25°C|mV/°C Reference to 25°C,ID= 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|2.0|2.4|m|VGS= 10V,ID= 100A|
|||–––|2.6|–––||VGS=6.0V,ID=50A|
|VGS(th)|Gate Threshold Voltage|2.1|–––|3.7|V|VDS =VGS, ID =250µA|
|GS(th)<br>IDSS<br>~~EEE~~|Drain-to-Source Leakage Current<br>~~EEE~~|–––<br>~~EEE~~|–––<br>~~EEE~~|1.0<br>~~EEE~~|µA<br>~~EEE~~|VDS=60V,VGS=0V<br>~~EEE~~|
|||–––<br>~~EEE~~|–––<br>~~EEE~~|150<br>~~EEE~~||VDS =60V,VGS =0V,TJ =125°C<br>~~EEE~~|
|IGSS<br>~~EEE~~|Gate-to-Source Forward Leakage<br>~~EEE~~|–––<br>~~EEE~~|–––<br>~~EEE~~|100<br>~~EEE~~|nA<br>~~EEE~~|VGS= 20V<br>~~EEE~~|
||Gate-to-SourceReverseLeakage|–––|–––|-100||VGS= -20V|
|RG<br>~~ee~~|Gate Resistance<br>~~ee~~|–––<br>~~ee~~|1.9<br>~~ee~~|–––<br>~~ee~~|<br>~~ee~~|~~ee~~|



## **Notes:** 

>  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) 

>  Repetitive rating; pulse width limited by max. junction temperature. 

>   Limited by TJmax, starting TJ = 25°C, L = 75µH, RG = 50, IAS = 100A, VGS =10V. 

>  ISD  100A, di/dt  1135A/µs, VDD  V(BR)DSS, TJ 175°C. 

-  Pulse width  400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- R is measured at TJ approximately 90°C. 

- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994:  http://www.irf.com/technical-info/appnotes/an-994.pdf 

>     Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 39A, VGS =10V. 

- Pulse drain current is limited at 780A by source bonding technology. 

2 

2017-04-05 

~~Cinfineon~~ 

IRFB/S/SL7534PbF ~~yy~~ 

## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~a~~<br>~~es~~|**Parameter**<br>~~IS~~|**Min.**<br>~~I~~|**Typ. **<br>~~I (~~|**Max. Units**<br>~~(~~|**Max. Units**<br>~~(~~|**Max. Units**<br>**Conditions**<br>~~(QO~~|
|---|---|---|---|---|---|---|
|gfs<br>~~es~~<br>~~ee~~<br>~~ee~~|Forward Transconductance<br>~~IS~~<br>~~es~~<br>|498<br>~~I~~<br>~~es~~<br>~~es~~<br>|–––<br>~~I (~~<br>~~es~~<br>~~es~~<br>|–––<br>~~(~~<br>~~es~~<br>|S<br>~~(~~|VDS= 10V,ID=100A<br>~~(QO~~|
|Qg<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Total Gate Charge<br>~~IS ~~<br>~~es~~<br><br>|–––<br> ~~I ~~<br>~~es~~<br>~~es~~<br><br>~~Ge~~<br>|186<br> ~~I (~~<br>~~es~~<br>~~es~~<br><br>|279<br>~~(~~<br>~~es~~<br><br>|nC<br>~~(~~|ID= 100A<br>VDS= 30V<br>VGS= 10V<br>~~(QO~~|
|Qgs<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-to-Source Charge<br>~~es~~<br>~~es~~<br><br>|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>~~Ge~~<br><br>~~es~~<br>|43<br>~~es~~<br>~~es~~<br>~~es~~<br><br>~~es~~<br>|–––<br>~~es~~<br>~~es~~<br><br>|||
|Qgd<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-to-Drain Charge<br><br>~~es~~<br><br>|–––<br>~~es ~~<br><br>~~Ge~~<br>~~es~~<br>~~es~~<br><br>~~ee~~<br>|56<br> ~~es~~<br><br>~~es~~<br>~~es~~<br><br>|–––<br><br>~~es~~<br><br>|||
|Qsync<br>~~ee~~<br>~~ee~~<br>~~ee~~|Total Gate Charge Sync.(Qg–Qgd)<br>~~es~~<br>~~es~~<br>|–––<br>~~Ge~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~ee~~<br>|130<br>~~es~~<br>~~es~~<br>~~es~~<br>|–––<br>~~es~~<br>~~es~~<br>|||
|td(on)<br>~~ee~~<br>~~ee~~<br>~~ae~~<br>~~a~~|Turn-On DelayTime<br><br>~~**e**e~~|–––<br>~~es ~~<br><br>~~ee~~<br>~~e~~<br>~~es~~|20<br> ~~es~~<br><br>~~e~~<br>~~ee~~|–––<br><br>~~e~~|ns|VDD= 30V<br>ID= 100A<br>RG= 2.7<br>VGS= 10V|
|tr<br>~~ee~~<br>~~ae~~<br>~~a~~|Rise Time<br>~~**e**e~~<br>~~s~~|–––<br>~~ee~~<br>~~e~~<br>~~s~~<br>~~es~~|134<br>~~e~~<br>~~s~~<br>~~ee~~|–––<br>~~e~~<br>~~s~~|||
|td(off)<br><br>~~ae~~<br>~~a~~<br>~~ee~~<br>~~ee~~|Turn-Off DelayTime<br>~~**e**e~~<br>~~s~~<br>~~es~~<br>|–––<br>~~e~~<br>~~s~~<br>~~es ~~<br>~~es~~<br>~~es~~<br>|118<br>~~e~~<br>~~s~~<br> ~~ee~~<br>~~es~~<br>~~es~~<br>|–––<br>~~e~~<br>~~s~~<br>~~es~~<br>|||
|tf<br>~~ee~~<br>~~ee~~<br>~~ee~~|Fall Time<br>~~es~~<br>|–––<br>~~es~~<br>~~es~~<br><br>~~Gs~~|93<br>~~es~~<br>~~es~~<br>|–––<br>~~es~~<br>|||
|Ciss<br>~~ee~~<br>~~ee~~<br>~~ee~~|Input Capacitance<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>~~Gs~~|10034<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|pF<br><br>~~rs~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7<br>~~ee~~|
|Coss<br>~~ee~~<br>~~ee~~|Output Capacitance<br>|–––<br>~~es~~<br><br>~~Gs~~|921<br>~~es~~<br>|–––<br>|||
|Crss<br>~~ee~~<br>~~a~~<br>~~es~~|Reverse Transfer Capacitance<br>|–––<br>~~Gs~~<br>|594<br>~~ee~~<br>|–––<br>~~ee~~<br>|||
|Coss eff.(ER)<br>~~a ee~~<br>~~es~~|Effective Output Capacitance<br>(Energy Related)<br>~~ee~~<br>|–––<br>~~ee~~<br><br>~~Irs~~|892<br>~~ee~~<br>~~ee~~<br><br>~~UD~~|–––<br>~~ee~~<br>~~ee~~<br><br>~~I~~||VGS= 0V, VDS = 0V to 48V<br>~~ee~~|
|Coss eff.(TR)<br>~~es~~|Output Capacitance(Time Related)<br>~~rs~~|–––<br>~~rs~~<br>~~Irs~~|1145<br>~~ee~~<br>~~rs~~<br>~~UD~~|–––<br>~~ee~~<br>~~rs~~<br>~~I~~||VGS= 0V,VDS = 0V to 48V<br>~~ee~~|
|**Diode Characteristics**<br>~~ee ee ee~~<br>~~es~~<br>~~Irs UD I~~<br>~~rs~~<br>~~ee~~<br>~~rs tsnDDO~~|||||||
|**Symbol**<br>~~ee~~|**Parameter **<br>~~rs ts~~|**Min.**<br>~~ts~~|**Typ. **<br>~~nD~~|**Max.**<br>~~DO~~|**Units**<br>~~DO~~|**Conditions**|
|IS<br>~~ee~~<br>~~fp~~|Continuous Source Current<br>(BodyDiode)<br>~~rs ts~~<br>~~fp~~|–––<br>~~ts ~~<br>~~fp~~|–––<br> ~~nD ~~<br>~~fp~~|232<br> ~~DO~~<br>~~fp~~|A<br>~~DO~~<br>~~fp~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>D<br>S<br>G<br>~~fp~~|
|ISM<br>~~fp~~|Pulsed Source Current<br>(Body Diode)<br>~~fp~~|–––<br>~~fp~~|–––<br>~~fp~~|944*<br>~~fp~~|||
|VSD<br>~~a OD~~<br>~~ee~~|Diode Forward Voltage<br>~~OD~~<br>~~RI~~|–––<br>~~OD~~<br>~~RI~~|–––<br>~~OD~~<br>~~tN~~|1.2<br>~~OD~~<br>~~I~~|V<br>~~OD~~<br>~~I~~|TJ= 25°C,IS= 100A,VGS= 0V<br>~~OD~~|
|dv/dt<br>~~ee~~|Peak Diode Recoverydv/dt<br>~~RI~~|–––<br>~~RI~~<br>~~ee~~|9.2<br>~~tN~~<br>~~**ee**~~|–––<br>~~I~~<br>~~e~~~~**e**~~|V/ns T<br>~~I~~<br>~~**e**e~~|V/ns TJ= 175°C,IS=100A,VDS= 60V|
|trr<br>~~ee~~<br>~~a~~|Reverse Recovery Time<br>~~RI~~<br>~~a~~|–––<br>~~RI~~<br>~~a~~<br>~~ee~~|46<br>~~tN ~~<br>~~a~~<br>~~**ee**~~|–––<br> ~~I~~<br>~~a~~<br>~~e~~~~**e**~~|ns<br>~~I~~<br>~~a~~<br>~~**e**e~~|TJ =25°CVDD= 51V<br>TJ =125°CIF= 100A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~a~~<br>~~ee~~<br>~~ee~~|49<br>~~a~~<br>~~**ee**~~<br>~~ee~~|–––<br>~~a~~<br>~~e~~~~**e**~~<br>~~ee~~<br>~~e~~|||
|Qrr<br>~~a~~<br>~~Cf~~|Reverse Recovery Charge<br>~~a~~<br>~~Cf~~<br>~~PF~~|–––<br>~~a~~<br>~~ee ~~<br>~~ee~~<br>~~Cf~~<br>~~Ee~~<br>~~PF~~|71<br>~~a~~<br> ~~**ee** ~~<br>~~ee~~<br>~~Cf~~<br>~~Ee~~<br>|–––<br>~~a~~<br> ~~e~~~~**e**~~<br>~~ee~~<br>~~e~~<br>~~Cf~~<br>~~Ee~~<br>|nC<br>~~a~~<br>~~**e**e~~<br>~~Cf~~||
|||–––<br>~~Cf~~<br>~~Ee~~<br>~~PFtT~~|83<br>~~Cf~~<br>~~Ee~~<br>~~tT~~|–––<br>~~Cf~~<br>~~Ee~~<br>~~tT~~|||
|IRRM<br>~~Cf~~<br>~~a~~|Reverse Recovery Current<br>~~Cf~~<br>~~PF~~<br>~~es~~|–––<br>~~Cf~~<br>~~Ee~~<br>~~PFtT~~<br>~~es~~<br>~~es ee~~|2.6<br>~~Cf~~<br>~~Ee~~<br>~~tT~~<br>~~es~~<br>~~ee~~|–––<br>~~Cf~~<br>~~Ee~~<br>~~tT~~<br>~~es~~|A<br>~~Cf~~<br>~~es~~||



3 

2017-04-05 

IRFB/S/SL7534PbF 

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1000<br>100<br>4.5V<br>VGS<br>TOP           15V<br>10 10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>60µs PULSE WIDTH60µs PULSE WIDTHPULSE WIDTH 5.0V<br>Tj = 25°C BOTTOM 4.5V<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics<br>1000<br>100<br>|Z<br>T J  = 175°C TJ = 25°CJ = 25°C= 25°C<br>10<br>1<br>VDS = 25VDS = 25V= 25V<br>60µs PULSE WIDTH60µs PULSE WIDTH<br>0.1<br>[fo<br>2 ao 4 6 8<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000<br>100<br>4.5V<br>100<br>4.5V<br>VGS<br>TOP           15V VGS<br>10 10V TOP           15V<br>8.0V 10V<br>7.0V 8.0V<br>6.0V 7.0V<br>5.5V 6.0V<br>60µs PULSE WIDTH60µs PULSE WIDTHPULSE WIDTH 5.0V 5.5V<br>Tj = 25°C BOTTOM 4.5V 60µs PULSE WIDTH 5.0V<br>Tj = 175°C BOTTOM 4.5V<br>1 10<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 2.4<br>ID = 100A<br>VGS = 10V<br>2.0<br>100<br>|Z 1.6 BuaEer<br>T J  = 175°C TJ = 25°CJ = 25°C= 25°C<br>10<br>1.2<br>1<br>0.8<br>VDS = 25VDS = 25V= 25V<br>60µs PULSE WIDTH60µs PULSE WIDTH<br>0.1 0.4<br>[fo PT ELLE<br>2 ao 4 6 8 -60 -20 20 60 100 140 180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 VGS   = 0V,       f = 1 MHZ 14.0<br>Ciss   = Cgs + Cgd,  Cds SHORTED ID = 100A<br>C Crss  oss    = C = Cds gd + Cgd 12.010.0 VVDS DS = 48V= 30V<br>10000 Ciss VDS= 12V<br>8.0<br>C oss 6.0<br>1000 a C rss a an<br>4.0<br>ieee Ane<br>2.0<br>100 AT 0.0 7<br>0.1 1 10 100 0 50 100 150 200 250<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 8.** Typical Gate Charge vs. 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage Gate-to-Source Voltage 4 2017-04-05 ~~++~~ 

IRFB/S/SL7534PbF ~~Ls~~ 

## ~~Cinfineon~~ 

**==> picture [214 x 201] intentionally omitted <==**

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1000 _<br>TJ = 175°C<br>100 pan<br>10 ft TJ = 25°C<br>1<br>VGS = 0V<br>0.1<br>Flinnfeed<br>0.1 0.4 0.7 1.0 1.3 1.6 1.9<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

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**----- Start of picture text -----**<br>
77<br>Id = 1.0mA<br>74<br>LZ<br>71<br>YELL<br>68<br>65<br>-60 -20 20 60 100 140 180<br>TJ , Temperature ( °C )<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


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1000<br>100µsec<br>100<br>Limitted by Package<br>OPERATION IN THIS AREA  1msec<br>10<br>LIMITED BY RDS(on)<br>1<br>10msec<br>0.1 Tc = 25°C DC<br>Tj = 175°C<br>Single Pulse<br>0.01<br>= 0.1 ES 1 10 =<br>VDS, Drain-toSource Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

**==> picture [209 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
12<br>VGS = 5.5V<br>VGS = 6.0V<br>VGS = 7.0V<br>9 VGS = 8.0V<br>VGS = 10V<br>6<br>3<br>P itt<br>0<br>yt<br>0 100 200 300 400 500<br>ID, Drain Current (A)<br>)<br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

5 ~~ee~~ 

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## ~~Cinfineon~~ 

**==> picture [445 x 437] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>TT TLLn<br>D = 0.50<br>0.1 0.20<br>Hi Ss tt |<br>0.10<br>0.05<br>0.01 Sie 0.02  ALAnel<br>0.01<br>0.001 maHar SINGLE PULSE ETE EHTEL<br>( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 Gil EE<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150 ° C and<br>Tstart =25°C (Single Pulse)<br>100<br>TTTCET<br>10<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 150°C.<br>1 eeea Dineenaaa eelai<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Avalanche Current vs. Pulse Width 

**==> picture [209 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
400<br>TOP          Single Pulse<br>350 BOTTOM   1.0% Duty Cycle<br>ID = 100A<br>300<br>ONE<br>250<br>SNOT<br>200 ONNCCECEII<br>150<br>CCENSNEEE<br>100<br>COONS<br>50<br>COONS<br>COEECEEEISS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

- 1.Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

EAS (AR) = PD (ave)·tav 

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**==> picture [540 x 244] intentionally omitted <==**

**----- Start of picture text -----**<br>
IRFB/S/SL7534PbF<br>Ce<br>4.5 15<br>IF = 60A<br>4.0 VR = 51V<br>Toor<br>TJ = 25°C<br>3.5 PSCC 10 T J  = 125°C -| | be<br>3.0<br>PSS Bai<br>2.5<br>CPPS eT<br>5<br>2.0 ID = 250µA<br>ID = 1.0mA<br>ID = 1.0A<br>ART 2<br>1.5<br>CoorsES) PCED<br>1.0 0<br>-75 -50 -25 0 25 50 75 100 125 150 175 0 200 400 600 800 1000<br>TJ , Temperature ( °C ) diF /dt (A/µs)<br>IRRM (A)<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

**Fig 18.** Typical Recovery Current vs. dif/dt 

**==> picture [503 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
15 300<br>IF = 100A IF = 60A<br>VR = 51V VR = 51V<br>250<br>TJ = 25°C TJ = 25°C<br>10 T J  = 125°C TJ = 125°C<br>| fe aes<br>200<br>; 1a<br>150<br>pA Ee<br>5<br>100<br>tL EEZane<br>0 50<br>0 200 400 600 800 1000 0 200 400 600 800 1000<br>diF /dt (A/µs) diF /dt (A/µs)<br>IRRM (A) QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

**==> picture [217 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
300<br>IF = 100A<br>VR = 51V<br>250<br>TJ = 25°C<br>TJ = 125°C<br>200<br>| ChE<br>“| 4<br>150<br>EER eZa<br>100<br>[ty |<br>Lanne<br>50<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

7 2017-04-05 ~~=~~ 

IRFB/S/SL7534PbF 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

**==> picture [21 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

**==> picture [172 x 117] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th) '<br>\ ! H H H<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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IRFB/S/SL7534PbF ~~yy~~ 

## ~~Cinfineon~~ 

## **TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

E X A M P L E : T H IS IS A N IR F 1 0 1 0 L O T  C O D E 1 7 8 9 A S S E M B L E D O N W W 1 9 , 2 0 0 0 IN T H E A S S E M B L Y  L IN E "C " N o t e :  "P " in a s s e m b ly  lin e p o s it io n in d ic a t e s  "L e a d -  F r e e " 

**==> picture [251 x 83] intentionally omitted <==**

**----- Start of picture text -----**<br>
P A R T  N U M B E R<br>IN T E R N A T IO N A L<br>R E C T IF IE R<br>L O G O<br>D A T E  C O D E<br>Y E A R  0  =  2 0 0 0<br>A S S E M B L Y<br>W E E K  1 9<br>L O T  C O D E<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to website at http://www.irf.com/package/ 9 ~~a~~ 

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IRFB/S/SL7534PbF 

## **TO-262 Package Outline** (Dimensions are shown in millimeters (inches) 

## **TO-262 Part Marking Information** 

**==> picture [370 x 246] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>INTERNATIONAL<br>ASSEMBLED ON WW 19, 1997<br>RECTIFIER<br>IN THE ASSEMBLY LINE "C"<br>LOGO<br>DATE CODE<br>YEAR 7 = 1997<br>ASSEMBLY<br>LOT CODE WEEK 19<br>LINE C<br>|<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER<br>LOGO<br>DATE CODE<br>P = DESIGNATES LEAD-FREE<br>ASSEMBLY<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 = 1997<br>WEEK 19<br>A = ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to website at http://www.irf.com/package/ 10 2017-04-05 ~~cr~~ 

~~Cinfineon~~ 

IRFB/S/SL7534PbF ~~yy~~ 

## **D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D[2] Pak (TO-263AB) Part Marking Information** 

**==> picture [296 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO rTeaR ~<br>DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY<br>LOT CODE WEEK 02<br>LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER F530S<br>LOGO DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY<br>YEAR 0 =  2000<br>LOT CODE<br>WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to website at http://www.irf.com/package/ 

11 

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~~Cinfineon~~ 

IRFB/S/SL7534PbF ~~yy~~ 

## **D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [370 x 392] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Note: For the most current drawing please refer to website at http://www.irf.com/package/ 

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|infineon|infineon|infineon|infineon|infineon|
|---|---|---|---|---|
|<br>IRFB/S/SL7534PbF<br>**Qualification Information**<br>infineon<br>~~Gren~~<br>~~ss~~<br>~~Ee~~|||||
||**Qualification Level**|||Industrial<br>(per JEDEC JESD47F)†|
||**Moisture Sensitivity Level**|**Moisture Sensitivity Level**|TO-220|N/A|
||||D2Pak|MSL1|
||||TO-262|N/A|
||**RoHS Compliant**|||Yes|



- Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**|**Comments**|
|---|---|
|11/5/2014|<br>Updated EAS (L =1mH)= 775mJ  on page 2<br><br>Updated note 10  “Limited by TJmax, starting TJ= 25°C, L = 1mH, RG= 50, IAS= 39A, VGS=10V”.  on page 2<br><br>Updatedpackage outline onpage 9,10,11.|
|04/05/2017|<br>Changed datasheet with Infineon logo - all pages.<br><br>Added disclaimer on last page.<br><br>ModifyFig10 onpage 5.|



## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **IMPORTANT NOTICE** 

## **Edition 2016-04-19** 

The information given in this document shall in no **Published by** event be regarded as a guarantee of conditions or **Infineon Technologies AG characteristics  (“Beschaffenheitsgarantie”) . 81726 Munich, Germany** 

With respect to any examples, hints or any typical values stated herein and/or any information **© 2016 Infineon Technologies AG.** regarding the application of the product, Infineon **All Rights Reserved.** Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **document? Email:** erratum@infineon.com 

**Email:** erratum@infineon.com In addition, any information given in this document **is subject to customer’s compliance with its** obligations stated in this document and any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and **ifx1** any use of the product of Infineon Technologies in **customer’s applications.** 

The data contained in this document is exclusively intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, **Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

13 

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---

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