# Power MOSFET, N Channel, 40 V, 120 A, 3300 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2253788/)

**URL**: https://novapart.co/products/IRFB7446PBF/power-mosfet-n-channel-40-v-120-a-3300-ohm-to
**SKU**: IRFB7446PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3890
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 99W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 120A |
| Drain Source On State Resistance | 3300µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2253788/)

## ~~TR Rectitier~~ 

## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

- Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC Inverters 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free* 

- RoHS Compliant, Halogen-Free* 

## Strong _IR_ FET™ IRFB7446PbF ~~po~~ 

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HEXFET [® ] Power MOSFET<br>VDSS  40V<br>D<br>RDS(on) typ. 2.6m <br>            max  3.3m <br>G<br>ID (Silicon Limited)  123A <br>S<br>ID (Package Limited)  120A<br>==<br>S<br>D<br>G<br>TO-220AB<br>IRFB7446PbF<br>G  D  S<br>Gate  Drain  Source<br>a<br>**----- End of picture text -----**<br>


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Base part number  Package Type  Standard Pack  Orderable Part Number<br>Form  Quantity<br>IRFB7446PbF  TO-220  Tube  50  IRFB7446PbF<br>8<br>125<br>ID = 70A<br>100<br>6<br>SOT<br>TJ = 125°C<br>75<br>PEP ALL<br>4<br>50 PTL EN.<br>2<br>TJ = 25°C 25 BREN<br>0<br>efile<br>2 4 6 8 10 12 14 16 18 20 0 yA<br>25 50 75 100 125 150 175<br>VGS, Gate -to -Source Voltage  (V)  TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>) <br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

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IRFB7446PbF 

## **Absolute Maximum Rating** 

|**Absolute Maximum Rating**||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|**Symbol**<br>**Parameter**|||||||**Max.**||||**Units**|
|ID @TC= 25°C<br>Continuous Drain Current,VGS@10V(Silicon Limited)|||||||123|||||
|ID @TC= 100°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)<br>ID @TC= 25°C<br>Continuous Drain Current,VGS @10V(Wire Bond Limited)|||||||87<br>120||||A|
|IDM<br>Pulsed Drain Current|||||||492|||||
|PD @TC= 25°C<br>Maximum Power Dissipation|||||||99|99|||W|
|Linear DeratingFactor|||||||0.66||||W/°C|
|VGS<br>Gate-to-Source Voltage|||||||± 20||||V|
|TJ<br>TSTG<br>Operating Junction and<br>StorageTemperatureRange||||||-55  to + 175|-55  to + 175||||°C|
|SolderingTemperature,for 10 seconds (1.6mm fromcase)|||||||300|||||
|MountingTorque, 6-32 or M3 Screw|||||10 lbf·in(1.1 N·m)|||||||
|**Avalanche Characteristics**||||||||||||
|EAS<br>Single Pulse Avalanche Energy<br>EAS(L=1mH)<br>Single Pulse Avalanche Energy|||||||111<br>236||||mJ|
|IAR<br>Avalanche Current<br>EAR<br>Repetitive Avalanche Energy|||||See Fig 15, 16, 23a, 23b||||||A<br>mJ|
|**Thermal Resistance**||||||||||||
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>1.52<br>°C/W<br>RCS<br>Case-to-Sink,Flat Greased Surface<br>0.50<br>–––<br>RJA<br>Junction-to-Ambient<br>–––<br>62<br>**Static @ TJ = 25°C (unless otherwise specified)**<br>~~——————a~~||||||||||||
|**Symbol**<br>**Parameter**|**Min.**|**Typ. Max.**|**Typ. Max.**|**Units**|||||**Conditions**|||
|V(BR)DSS<br>Drain-to-Source Breakdown Voltage|40|–––|–––||V|VGS= 0V|= 0V,ID= 250µA|||||
|V(BR)DSS/TJBreakdown Voltage Temp. Coefficient|––– 0.033 –––|––– 0.033 –––|––– 0.033 –––|V/°C||Reference to 25°C|||Reference to 25°C,ID= 5mA||= 5mA|
|RDS(on)<br>Static Drain-to-Source On-Resistance|–––<br>–––|2.6<br>3.9|3.3<br>–––||m|VGS= 10V<br>VGS=|= 10V,ID= 70A<br>=6.0V,ID=35A|||||
|VGS(th)<br>Gate Threshold Voltage|2.2|3.0|3.9||V|VDS|=VGS, I||, ID =100µA|||
|IDSS<br>Drain-to-Source Leakage Current|–––<br>–––|–––<br>–––|1.0<br>150||µA|VDS=4<br>VDS|=40V,VGS=0V<br> =40V,VGS =0V,TJ =125°C|||||
|IGSS<br>Gate-to-Source Forward Leakage<br>Gate-to-SourceReverseLeakage|–––<br>–––|–––<br>–––|100<br>-100||nA|VGS= 20V<br>VGS= -2|= 20V<br>= -20V||V|||
|RG<br>Gate Resistance|–––|1.6|–––|||||||||



## **Notes:** 

Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some  lead mounting arrangements. (Refer to AN-1140) 

-  Repetitive rating;  pulse width limited by max. junction temperature. 

- Limited by TJmax, starting TJ = 25°C, L = 0.046mH,RG = 50, IAS = 70A, VGS =10V. 

-  ISD  70A, di/dt  1174A/µs, VDD  V(BR)DSS, TJ  175°C. 

-  Pulse width  400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- R is measured at TJ approximately 90°C. 

-    This value determined from sample failure population, starting TJ = 25°C, L= 1mH, RG = 50, IAS = 22A, VGS =10V. 

- Halogen -Free since April 30, 2014 

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2 

~~LR~~ 

IRFB7446PbF ~~Oy~~ 

**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Min.**<br>~~a~~|**Typ. **<br>~~a~~|**Max. Units**<br>~~a~~|**Max. Units**<br>~~a~~|**Max. Units**<br>**Conditions**<br>~~a~~|
|---|---|---|---|---|---|---|
|gfs<br>~~a~~|Forward Transconductance<br>~~a~~|269<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|S<br>~~a~~|VDS= 10V,ID=70A<br>~~a~~|
|Qg<br>~~a~~|Total Gate Charge<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|62<br>~~a~~<br>~~a~~|93<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|ID= 70A<br>VDS= 20V<br>VGS= 10V<br>~~a~~<br>~~a~~|
|Qgs|Gate-to-Source Charge|–––|16|–––|||
|Qgd<br>~~a~~|Gate-to-Drain Charge<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|20<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|||
|Qsync<br>~~a~~<br>~~a~~<br>~~ee~~|Total Gate Charge Sync.(Qg–Qgd)<br>~~a~~<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~<br>~~a~~|42<br>~~a~~<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~<br>~~a~~|||
|td(on)<br>~~ee~~|Turn-On DelayTime|–––|11|–––|ns|VDD= 20V<br>ID= 30A<br>RG= 2.7<br>VGS= 10V<br>~~ee~~|
|tr<br>~~ee~~<br>~~a~~|Rise Time<br>|–––<br>|34<br>|–––<br>|||
|td(off)<br>~~a~~|Turn-Off DelayTime<br>|–––<br>|33<br>|–––<br>|||
|tf<br>~~So~~<br>~~ee~~|Fall Time<br>~~So~~<br>~~ee~~|–––<br>~~So~~<br>~~ee~~|23<br>~~So~~|–––<br>~~So~~|||
|Ciss<br>~~So~~<br>~~ee~~|Input Capacitance<br>~~So~~<br>~~ee~~|–––<br>~~So~~<br>~~ee~~|3183<br>~~So~~|–––<br>~~So~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.5<br>~~ee~~|
|Coss<br>~~ee~~|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|475|–––|||
|Crss<br>~~ee~~<br>~~PR~~|Reverse Transfer Capacitance<br>~~ee~~<br>|–––<br>~~ee~~<br>|331<br>|–––<br>|||
|Coss eff.(ER)<br>~~ee~~<br>~~PR~~|Effective Output Capacitance<br>(Energy Related)<br>~~ee~~<br>|–––<br>~~ee~~<br>|596<br>|–––<br>||VGS= 0V, VDS = 0V to 32V<br>~~ee~~|
|Coss eff.(TR)<br>~~PRa~~|Output Capacitance(Time Related)<br>~~a~~|–––<br>~~a~~|688<br>~~a~~|–––<br>~~a~~||VGS= 0V,VDS = 0V to 32V|
|**Diode Characteristics**<br>~~GO~~|||||||
|**Symbol**<br>~~eG~~|**Parameter **<br>~~eG~~|**Min.**<br>~~eG~~<br>~~GO~~|**Typ. **<br>~~eG~~<br>~~GO~~|**Max.**<br>~~eG~~<br>~~GO~~|**Units**<br>~~eG~~<br>~~GO~~|**Conditions**<br>~~eG~~|
|IS<br>~~fp~~|Continuous Source Current<br>(BodyDiode)<br>~~fp~~|–––<br>~~GO~~<br>~~fp~~|–––<br>~~GO~~<br>~~fp~~|120<br>~~GO~~<br>~~fp~~|A<br>~~GO~~<br>~~fp~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>D<br>S<br>G<br>~~fp~~|
|ISM<br>~~fp~~|Pulsed Source Current<br>(Body Diode)<br>~~fp~~|–––<br>~~fp~~|–––<br>~~fp~~|492<br>~~fp~~|||
|VSD<br>~~a~~|Diode Forward Voltage<br>~~a~~|–––<br>~~a~~|0.9<br>~~a~~|1.3<br>~~a~~|V<br>~~a~~|TJ= 25°C,IS= 70A,VGS= 0V<br>~~a~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|7.6<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|V/ns T<br>~~a~~<br>~~a~~|V/ns TJ= 175°C,IS= 70A,VDS= 40V<br>~~a~~<br>~~a~~|
|trr<br>~~ee~~|Reverse Recovery Time<br>~~ee~~|–––<br>~~ee~~|22<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~|TJ =25°CVDD= 34V<br>TJ =125°CIF= 70A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~ee~~|24<br>~~ee~~|–––<br>~~ee~~|||
|Qrr<br>~~ee~~<br>~~eee~~|Reverse Recovery Charge<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|15<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|nC<br>~~ee~~<br>~~eee~~||
|||–––<br>~~eee~~|15<br>~~eee~~|–––<br>~~eee~~|||
|IRRM<br>~~eee~~<br>~~ee~~|Reverse Recovery Current<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~|1.0<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~|A<br>~~eee~~<br>~~ee~~||



3 ~~—~~ 

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IRFB7446PbF ~~a~~ 

## ~~I¢aR~~ 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>100 7.0V<br>6.0V<br>5.5V<br>Z<br>5.0V<br>BOTTOM 4.5V<br>10<br>4.5V<br>1<br>60µs PULSE WIDTH60µs PULSE WIDTHPULSE WIDTH<br>Tj = 25°C<br>0.1<br>0.1 sii 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics<br>1000<br>TJ = 175°CJ = 175°C= 175°C<br>100<br>10 of<br>ia<br>TJ = 25J = 25= 25 ° C<br>1 Pi<br>VDS = 10VDS = 10V= 10V 10V<br>60µs PULSE WIDTH60µs PULSE WIDTH<br>0.1 ffl<br>2 4 6 8 10<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>100 7.0V 7.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>Z 5.0V 100 sii 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>10<br>4.5V<br>10<br>4.5V<br>1<br>60µs PULSE WIDTH60µs PULSE WIDTHPULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>0.1 1<br>0.1 sii 1 10 100 0.1 sii: 1 BSG 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 2.2<br>ID = 70A<br>VGS = 10V<br>TJ = 175°CJ = 175°C= 175°C<br>100 1.8<br>10 of 1.4<br>ia<br>TJ = 25J = 25= 25 ° C<br>1 Pi 1.0<br>VDS = 10VDS = 10V= 10V 10V<br>60µs PULSE WIDTH60µs PULSE WIDTH<br>0.1 ffl<br>0.6<br>2 4 6 8 10<br>-60 -20 20 60 100 140 180<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 14.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs  + Cgd,  C ds SHORTED ID= 70A<br>12.0<br>C Crss  oss    = C = Cds gd + Cgd 10.0 VVDS DS = 32V= 20V<br>10000<br>8.0<br>SETI C iss SERRE 4m<br>6.0<br>Coss<br>1000<br>Crss 4.0<br>Ba, | FS<br>2.0<br>100 0.0<br>US) = ARBRE<br>0.1 1 10 100 0 10 20 30 40 50 60 70 80<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 8.** Typical Gate Charge vs. 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

Gate-to-Source Voltage 

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IRFB7446PbF ~~hs~~ 

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IR<br>**----- End of picture text -----**<br>


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1000 10000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>TJ = 175°C 1000<br>100<br>100µsec<br>100<br>TJ = 25°C 1msec<br>10 DC<br>Package Limited<br>10<br>10msec<br>ff<br>1<br>1 Tc = 25°C<br>Tj = 175°C<br>V GS  = 0V Single Pulse<br>0.1 0.1<br>0.0 Finn 0.5 1.0 1.5 2.0 0.1 Phe 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>Fig 9.   Typical Source-Drain Diode Forward Voltage<br>50 0.6<br>49 Id = 5.0mA VDS= 0V to 32V<br>0.5<br>WEssr=<br>48<br>| | | A<br>ae<br>47<br>0.4<br>46<br>pot tT<br>45 0.3<br>p | TA |<br>44<br>| | vi} | |<br>0.2<br>43<br>| [ft | | ft<br>42<br>poyA | ee| |ee 0.1<br>41<br>40 eet} 0.0<br>| |<br>-60 -20 20 60 100 140 180 0 5 10 15 20 25 30 35 40 45<br>TJ , Temperature ( °C )<br>VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A)<br>Energy (µJ)<br>ID,  Drain-to-Source Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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20.0<br>VGS = 5.5V<br>VGS = 6.0V<br>15.0 VGS = 7.0V<br>VGS = 8.0V<br>VGS = 10V<br>10.0<br>M<br>TE A L<br>SEpAG<br>5.0<br>0.0<br>| |Tf<br>0 100 200 300 400 500<br>ID, Drain Current (A)<br>)<br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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~~IR~~ 

IRFB7446PbF ~~SS~~ 

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10<br>1 a D = 0.50<br>0.20<br>0.10<br>=<br>0.1 0.05<br>0.02<br>0.01<br>==Ber<br>0.01<br>SINGLE PULSE Notes:<br>== —ailll<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 22cil [ARAN] 1E-005 ail 0.0001 BN|| 0.001 BO 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150°C and<br>100 ———— A Tstart = 25°C (Single Pulse)<br>SEEN ea<br>10<br>tae<br>1<br>i aeSaan<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming   j = 25°C and<br>Tstart = 150°C.<br>ee<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 a 1.0E-03 A 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.  Avalanche Current vs. Pulse Width<br>120<br>TOP          Single Pulse<br>Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>BOTTOM   1.0% Duty Cycle<br>(For further info, see AN-1005 at www.irf.com)<br>ID = 70A 1.Avalanche failures assumption:<br>Purely a thermal phenomenon and failure occurs at a<br>80 NI temperature far in excess of Tjmaxjmax. This is validated for every<br>part type.<br>2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not<br>   exceeded.<br>3. Equation below based on circuit and waveforms shown in Figures<br>    23a, 23b.<br>ISNT<br>40 4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br> increase during avalanche).<br>ae 6. Iav = Allowable avalanche current.<br>7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax<br>PETIA     (assumed as 25°C in Figure 14, 15).<br>0<br>tav = Average time in avalanche.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see Figures 14) thJC(D, tav) = Transient thermal resistance, see Figures 14) (D, tav) = Transient thermal resistance, see Figures 14) av) = Transient thermal resistance, see Figures 14) ) = Transient thermal resistance, see Figures 14)<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z  thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


   - Purely a thermal phenomenon and failure occurs at a 

   - temperature far in excess of Tjmaxjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 14) thJC(D, tav) = Transient thermal resistance, see Figures 14) (D, tav) = Transient thermal resistance, see Figures 14) av) = Transient thermal resistance, see Figures 14) ) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

EAS (AR) = PD (ave)·tav 

6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                   November 7, 2014 ~~ee~~ 

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IRFB7446PbF<br>IQR<br>4.5 6<br>IF = 46A<br>_| | 5 V R = 34V<br>3.5 TJ = 25°C<br>T = 125°C<br>4 J<br>2.5 eet 3 | -Cee<br>RR<br>ID = 100µA<br>ID = 250µA 2<br>1.5 ID = 1.0mA<br>ID = 1.0A<br>1<br>0.5 ) EN 0 are<br>ELLE TE Ty<br>-75 -25 25 75 125 175 225 0 200 400 600 800 1000<br>TJ , Temperature ( °C ) diF /dt (A/µs)<br>Fig 17.   Threshold Voltage vs. Temperature  Fig 18.   Typical Recovery Current vs. dif/dt<br>5 70<br>IF = 70A IF = 46A<br>VR = 34V 60 V R  = 34V<br>4<br>TJ = 25°C TJ = 25°C<br>50<br>TJ = 125°C TJ = 125°C<br>3 TAiT HPpepe<br>40<br>Ta 30 Ae<br>2<br>20<br>-4nn0 ae<br>1<br>y re<br>10<br>td Yo<br>0 tt 0 | | |<br>0 200 400 600 800 1000 0 200 400 600 800 1000<br>diF /dt (A/µs) diF /dt (A/µs)<br>IRRM (A)<br>VGS(th), Gate threshold Voltage (V)<br>IRRM (A) QRR (nC)<br>**----- End of picture text -----**<br>


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70<br>IF = 46A<br>60 V R  = 34V<br>TJ = 25°C<br>50<br>TJ = 125°C<br>HPpepe<br>40<br>30 Ae<br>20<br>ae<br>re<br>10<br>Yo<br>0 | | |<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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60<br>IF = 70A<br>50 V R = 34V TI<br>TJ = 25°C<br>T = 125°C<br>40 J<br>m7<br>30 za<br>20<br>Zen<br>Ean<br>10<br>er<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                   November 7, 2014 ~~ee~~ 

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## IRFB7446PbF ~~oy~~ 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V ae<br>tp 0.01<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs /, (th) : '|<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

8 www.irf.com © 2014 International Rectifier 

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IRFB7446PbF ~~es~~ 

## ~~IR~~ 

**TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

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E X A M P L E : T H IS  IS  A N  IR F 1 0 1 0<br>L O T  C O D E  1 7 8 9 IN T E R N A T IO N A L P A R T  N U M B E R<br>A S S E M B L E D  O N  W W  1 9 , 2 0 0 0 R E C T IF IE R<br>IN  T H E  A S S E M B L Y  L IN E  "C " L O G O<br>D A T E  C O D E<br>Y E A R  0  =  2 0 0 0<br>N o t e :  "P " in  a s s e m b ly  lin e  p o s it io n A S S E M B L Y<br>in d ic a t e s  "L e a d  -  F r e e " L O T  C O D E W E E K  1 9<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                   November 7, 2014 ~~= °°”.~~ ©|© ~~=2=2~~ 

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IRFB7446PbF ~~oy~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-220|N/A|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**|**Comment**|
|---|---|
|9/11/2012|Added Package limit  and updated Fig2 & Fig10 on page 1, 2 & page 5.|
|4/22/2014|Updated data sheet with new IR corporate template.<br>Updated package outline and part marking on page 9.<br>Added bullet point in the  Benefits  "RoHS Compliant, Halogen -Free" on page 1.|
|11/7/2014|Updated EAS (L =1mH)= 236mJ  on page 2<br>Updated note 9  “Limited by TJmax, starting TJ= 25°C, L = 1mH, RG= 50, IAS= 22A, VGS=10V”.  on page 2|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ © 2014 International Rectifier Submit Datasheet Feedback                   November 7, 2014 ~~_~~ 

10 ~~Lc~~ 

10 www.irf.com © 2014 International Rectifier 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFB7446PBF/power-mosfet-n-channel-40-v-120-a-3300-ohm-to)
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- [Supplier page](https://es.farnell.com/infineon/irfb7446pbf/mosfet-n-ch-40v-118a-to-220ab/dp/2253788)
---

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