# Power MOSFET, N Channel, 40 V, 195 A, 1600 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2253785/)

**URL**: https://novapart.co/products/IRFB7434PBF/power-mosfet-n-channel-40-v-195-a-1600-ohm-to
**SKU**: IRFB7434PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7590
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00125o; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 294W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 195A |
| Drain Source On State Resistance | 1600µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2253785/)

## ~~Cinfineon~~ 

## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

- Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC Inverters 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free* 

- RoHS Compliant, Halogen-Free* 

## Strong _IR_ FET™ IRFB7434PbF ~~a~~ 

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HEXFET [® ] Power MOSFET<br>VDSS  40V<br>D<br>RDS(on) typ. 1.25m <br>            max  1.6m <br>G<br>ID (Silicon Limited)  317A <br>S<br>ID (Package Limited)  195A<br>A==<br>S<br>D<br>G<br>TO-220AB<br>IRFB7434PbF<br>G  D  S<br>Gate  Drain  Source<br>a<br>**----- End of picture text -----**<br>


|||~~a~~|**G**<br>Gate<br>~~a~~|**D**<br>**S**<br>Drain<br>Source<br>~~a~~|
|---|---|---|---|---|
|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|||**Form**|**Quantity**||
|IRFB7434PbF|TO-220|Tube|50|IRFB7434PbF|



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5<br>ID = 100A<br>4<br>tt<br>3 T J  = 125°C<br>WELLE<br>2 PUN EEE<br>1<br>Rots TJ = 25°C<br>0 SERRE<br>2 4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>) <br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


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350<br>Limited By  Package<br>300<br>250 Pe<br>He<br>200<br>150<br>PTTAtAE<br>100<br>50 Po<br>on<br>0<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

1 

2018-07-10 

IRFB7434PbF ~~__LLL~~ 

## ~~Cinfineon~~ 

## **Absolute Maximum Rating** 

|**Symbol**|**Parameter**||**Max.**|**Max.**||**Units**|
|---|---|---|---|---|---|---|
|ID @TC= 25°C|Continuous Drain Current,VGS@10V(Silicon Limited)||317||||
|ID @TC= 100°C<br>ID @TC= 25°C|Continuous Drain Current,VGS @10V(Silicon Limited)<br>Continuous Drain Current,VGS @10V(Wire Bond Limited)||224<br>195|||A|
|IDM|Pulsed Drain Current||1270||||
|PD @TC= 25°C|Maximum Power Dissipation||294|||W|
||Linear DeratingFactor||1.96|||W/°C|
|VGS|Gate-to-Source Voltage||± 20|||V|
|TJ<br>TSTG|Operating Junction and<br>StorageTemperatureRange|-55  to + 175|-55  to + 175|||°C|
||SolderingTemperature,for 10 seconds (1.6mm fromcase)||300||||
||MountingTorque, 6-32 or M3 Screw|10 lbf·in(1.1 N·m|||1.1 N·m)||
|**Avalanche Characteristics**|||||||
|EAS (Thermally limited)<br>EAS(Thermallylimited)|Single Pulse Avalanche Energy<br>Single Pulse Avalanche Energy||490<br>1098|||mJ|
|IAR<br>EAR|Avalanche Current<br>Repetitive Avalanche Energy|See Fig 15, 16, 23a, 23b|||See Fig 15, 16, 23a, 23b|A<br>mJ|
|**Thermal Resistance**|||||||
|**Symbol**|**Parameter**|**Typ.**|||**Max.**|**Units**|
|RJC|Junction-to-Case|–––|||0.51||
|RCS|Case-to-Sink,Flat Greased Surface|0.50|||–––|°C/W|
|RJA|Junction-to-Ambient<br>–––||||62||



|**Symbol**<br>~~————~~|**Parameter**<br>~~————~~|**Min.**<br>~~————~~|**Typ. Max.**<br>~~————~~|**Typ. Max.**<br>~~————~~|**Units**<br>~~————~~|**Conditions**<br>~~————~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~————~~|Drain-to-Source Breakdown Voltage<br>~~————~~|40<br>~~————~~|–––<br>~~————~~|–––<br>~~————~~|V<br>~~————~~|VGS= 0V,ID= 250µA<br>~~————~~|
|V(BR)DSS/TJ<br>~~————~~<br>~~i~~|JBreakdown Voltage Temp. Coefficient<br>~~————~~<br>|––– 0.032 –––<br>~~————~~<br>~~EE~~<br>|––– 0.032 –––<br>~~————~~<br>~~EE~~<br>|––– 0.032 –––<br>~~————~~<br>~~EE~~<br>|V/°C<br>~~————~~<br>|Reference to 25°C,ID= 5mA<br>~~————~~<br>~~EE~~<br>|
|RDS(on)<br>~~TT~~<br>~~i~~|Static Drain-to-Source On-Resistance<br>~~TT~~<br>|–––<br>~~TT~~<br>~~EE~~<br>|1.25<br>~~TT~~<br>~~EE~~<br>|1.6<br>~~TT~~<br>~~EE~~<br>|m<br>~~TT~~<br>|VGS= 10V,ID= 100A<br>~~TT~~<br>~~EE~~<br>|
|||–––<br>~~TT~~<br>~~EE~~<br>|1.8<br>~~TT~~<br>~~EE~~<br>|–––<br>~~TT~~<br>~~EE~~<br>||VGS=6.0V,ID=50A<br>~~TT~~<br>~~EE~~<br>|
|VGS(th)<br>~~i~~|Gate Threshold Voltage<br>|2.2<br>~~EE~~<br>|3.0<br>~~EE~~<br>|3.9<br>~~EE~~<br>|V<br>|VDS =VGS, ID =250µA<br>~~EE~~<br>|
|GS(th)<br>IDSS<br>~~iSS~~|Drain-to-Source Leakage Current<br>~~———~~|–––<br>~~EE~~<br>~~———~~|–––<br>~~EE~~<br>~~———~~|1.0<br>~~EE~~<br>~~———~~|µA<br>~~———~~|VDS=40V,VGS=0V<br>~~EE~~<br>~~———~~|
|||–––<br>~~EE~~<br>~~———~~|–––<br>~~EE~~<br>~~———~~|150<br>~~EE~~<br>~~———~~||VDS =40V,VGS =0V,TJ =125°C<br>~~EE~~<br>~~———~~|
|IGSS<br>~~SS~~<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~———~~|–––<br>~~———~~|–––<br>~~———~~|100<br>~~———~~|nA<br>~~———~~<br>~~ts~~|VGS= 20V<br>~~———~~|
||Gate-to-SourceReverseLeakage<br>~~———~~<br>~~nS~~|–––<br>~~———~~<br>~~I~~|–––<br>~~———~~<br>~~IIs~~|-100<br>~~———~~<br>~~ts~~||VGS= -20V<br>~~———~~|
|RG<br>~~SS~~<br>~~ee~~|Gate Resistance<br>~~———~~<br>~~nS~~|–––<br>~~———~~<br>~~I~~|2.1<br>~~———~~<br>~~IIs~~|–––<br>~~———~~<br>~~ts~~|<br>~~———~~<br>~~ts~~|~~———~~|



## **Notes:** 

Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some  lead mounting arrangements. (Refer to AN-1140) 

>  Repetitive rating;  pulse width limited by max. junction temperature. 

- Limited by TJmax, starting TJ = 25°C, L = 0.099mH,RG = 50, IAS = 100A, VGS =10V. 

-  ISD  100A, di/dt  1307A/µs, VDD  V(BR)DSS, TJ  175°C. 

-  Pulse width  400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- R is measured at TJ approximately 90°C. 

-    Limited by TJmax, starting TJ = 25°C, L= 1mH, RG = 50, IAS = 47A, VGS =10V. 

- Halogen -Free since April 30, 2014 

2 

2018-07-10 

~~Cinfineon~~ 

IRFB7434PbF ~~__LLL~~ 

## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**||
|---|---|
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. **<br>**Max. Units**<br>**Conditions**<br>gfs<br>Forward Transconductance<br>211<br>–––<br>–––<br>S<br>VDS= 10V,ID=100A<br>Qg<br>Total Gate Charge<br>–––<br>216<br>324<br>ID= 100A<br>~~a~~<br>~~es~~<br>~~IS I I (QO~~<br>~~eees~~<br>~~es es~~||
|Qgs<br>Gate-to-Source Charge<br>–––<br>51<br>–––<br>VDS= 20V<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>77<br>–––<br>VGS= 10V<br>Qsync<br>Total Gate Charge Sync.(Qg–Qgd)<br>–––<br>139<br>–––<br>td(on)<br>Turn-On DelayTime<br>–––<br>24<br>–––<br>ns<br>VDD= 20V<br>tr<br>Rise Time<br>–––<br>68<br>–––<br>ID= 30A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>115<br>–––<br>RG= 2.7<br>tf<br>Fall Time<br>–––<br>68<br>–––<br>VGS= 10V<br>Ciss<br>Input Capacitance<br>–––<br>10820<br>–––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>1540<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>1140<br>–––<br>ƒ= 1.0MHz,  See Fig.5<br>Coss eff.(ER)<br>Effective Output Capacitance<br>(Energy Related)<br>–––<br>1880<br>–––<br>VGS= 0V, VDS = 0V to 32V<br>Coss eff.(TR)<br>Output Capacitance(Time Related)<br>–––<br>2208<br>–––<br>VGS= 0V,VDS = 0V to 32V<br>nC<br>~~eees~~<br>~~es es~~<br>~~eees~~<br>~~ee~~<br>~~ee~~~~**e**e~~<br>~~ae~~<br>~~s~~<br>~~es~~<br>~~ee~~<br>~~eees~~<br>~~eses~~<br>~~Oo~~<br>~~ee~~<br>~~a~~<br>~~a ee~~<br>~~ee ee ee~~<br>~~esrs~~<br>~~Irs UD I~~<br>~~rs~~||
|**Diode Characteristics**||
|**Symbol**<br>**Parameter **<br>**Min.**<br>**Typ. **<br>**Max.Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>317<br>A<br>MOSFET symbol<br>(BodyDiode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>1270<br>integral reverse<br>(Body Diode)<br>p-n junction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>0.9<br>1.3<br>V<br>TJ= 25°C,IS= 100A,VGS= 0V<br>dv/dt<br>Peak Diode Recoverydv/dt<br>–––<br>5.0<br>–––<br>V/ns TJ= 175°C,IS= 100A,VDS= 40V<br>trr<br>Reverse Recovery Time<br>–––<br>38<br>–––<br>nsTJ =25°CVDD= 34V<br>–––<br>37<br>–––<br>TJ =125°CIF= 100A,<br>Qrr<br>Reverse Recovery Charge<br>–––<br>50<br>–––<br>nCTJ =25°Cdi/dt = 100A/µs<br>–––<br>50<br>–––<br>TJ =125°C <br>IRRM<br>Reverse Recovery Current<br>–––<br>1.9<br>–––<br>A<br>TJ= 25°C <br>D<br>S<br>G<br>~~ee~~<br>~~rs ts nD DO~~<br>~~fp~~<br>~~——————~~<br>~~eeRI~~<br>~~tN I~~<br>~~I~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~EE~~<br>~~PFtT~~<br>~~aes~~<br>~~es ee~~||
|3<br>2018-07-10|2018-07-10|



IRFB7434PbF 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>100 7.0V<br>6.0V<br>5.5V5.0V<br>5.0V<br>ZA BOTTOM 4.5V<br>10<br>1<br>4.5V5VV<br>60µs PULSE WIDTH60µs PULSE WIDTHPULSE WIDTH<br>Tj = 25°C<br>0.1<br>a<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>100 7.0V 7.0V<br>6.0V 6.0V<br>5.5V5.0V 100 5.5V 5.0V<br>ZA BOTTOM 4.5V 4 BOTTOM 4.5V<br>10<br>4.5V<br>10<br>1<br>4.5V5VV<br>60µs PULSE WIDTH60µs PULSE WIDTHPULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>0.1 1<br>a Hi ieee,<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 2.0<br>ID = 100A<br>1.8<br>VGS = 10V<br>TJ = 175°C<br>100 ae Hy<br>1.6<br>1.4<br>10 +4 LEED<br>1.2<br>TJ = 25 ° C<br>1 cia 1.0 OATSP| |TALL<br>VDS = 10V 0.8<br>60µs PULSE WIDTH<br>0.1 qe} BERR<br>0.6 ~t | | | ff<br>2 4 6 8 10<br>-60 -20 20 60 100 140 180<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>1000000 14.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds SHORTED ID= 100A<br>100000 | CC rss  oss    = C= C ds gd  + C gd 12.010.0 pay VVDS DS = 32V= 20V<br>8.0<br>10000 C iss<br>6.0<br>C rss C oss<br>Hist A 4.0 SB 2<br>1000<br>TAS Ul 7 aan<br>2.0<br>Bld Ui ll PEE<br>100 0.0<br>0.1 1 10 100 0 50 100 150 200 250 300<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>C, Capacitance (pF)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

2018-07-10 

4 

IRFB7434PbF ~~__LLL~~ 

## ~~Cinfineon~~ 

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1000<br>TJ = 175°C<br>100<br>10 T J  = 25°C<br>1<br>V GS  = 0V<br>0.1<br>0.0 0.5 1.0 1.5 2.0 2.5<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

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50<br>Id = 5.0mA<br>49<br>48 |) +++<br>47 PF {| || || |YlfF|<br>46454443424140 fF|7iPF|P|7 [fi||Yt]||[AYT|[|[|{ |||||| ||||]|[ ||||<br>-60 -20 20 60 100 140 180<br>TJ , Temperature ( °C )<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


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10000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>1000<br>100µsec<br>1msec<br>100<br>Limited By Package<br>10<br>10msec<br>1 Tc = 25°C DC<br>Tj = 175°C<br>Single Pulse<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>1.6<br>VDS= 0V to 32V<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 5 10 15 20 25 30 35 40 45<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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20.0<br>VGS = 6.0V<br>VGS = 5.5V<br>15.0<br>10.0<br>VGS = 7.0V<br>VGS = 8.0V<br>5.0 VGS = 10V<br>a<br>war<br>0.0<br>0 100 200 300 400 500<br>ID, Drain Current (A)<br>)<br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

2018-07-10 

5 

IRFB7434PbF ~~__LLL~~ 

## ~~Cinfineon~~ 

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1<br>D = 0.50 SE eno<br>0.1 0.20<br>Sp 0.10 aeseer ere att Rl<br>0.05<br>Heer 0.02 TL | Ll<br>0.01<br>0.01<br>SINGLE PULSE<br>eu] 0<br>0.001 ( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 the cee<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>100<br>ee NS TTP 5<br>ae<br>Diels<br>10<br>pc Allowed avalanche Current vs avalanche  if PY a ie el<br>pulsewidth, tav, assuming   j = 25°C and<br>Tstart = 150°C.<br>TT<br>1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>Thermal Response ( Z  thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 15.** Avalanche Current vs. Pulse Width 

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600<br>TOP          Single Pulse<br>BOTTOM   1.0% Duty Cycle<br>500 I D  = 100A<br>HH<br>400 NU ineeeeeee<br>300<br>BXNGHERREEEE<br>200<br>PENCE<br>100<br>LSS<br>ELLE EERSL<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

1.Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

EAS (AR) = PD (ave)·tavAS (AR) = PD (ave)·tav= PD (ave)·tavD (ave)·tavtavav 

**Fig 16.** Maximum Avalanche Energy vs. Temperature EAS (AR) = PD (ave)·tavAS (AR) = PD (ave)·tav= PD (ave)·tavD (ave)·tavtavav 6 2018-07-10 ~~Fe~~ 

IRFB7434PbF 

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4.5 10<br>IF = 60A<br>VR = 34V<br>8<br>3.5 TJ = 25°C<br>TJ = 125°C<br>SHA 6 | Le<br>SST B28<br>2.5<br>A ar4an<br>4<br>ID = 250µA<br>ID = 1.0mA<br>1.5 ID = 1.0A AN a<br>2<br>0.5 =TA 0 EEEPELL<br>-75 -25 25 75 125 175 225 0 200 400 600 800 1000<br>TJ , Temperature ( °C ) diF /dt (A/µs)<br>Fig 17.   Threshold Voltage vs. Temperature  Fig 18.   Typical Recovery Current vs. dif/dt<br>10 240<br>IF = 100A 220 IF = 60A<br>VR = 34V VR = 34V<br>8 TJ = 25°C 200 TJ = 25°C<br>TJ = 125°C 180 T J  = 125°C<br>6 eres 160 ==<br>ae =—2<br>140<br>4 120<br>TH ===<br>100<br>2 PLL 80 a=<br>60<br>0 “CEE 40 =.=<br>0 200 400 600 800 1000 0 200 400 600 800 1000<br>diF /dt (A/µs) diF /dt (A/µs)<br>VGS(th), Gate threshold Voltage (V)<br>IRRM (A)<br>IRRM (A) QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

**==> picture [545 x 258] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>IF = 100A<br>VR = 34V<br>160<br>TJ = 25°C<br>TJ = 125°C<br>TAGmma<br>120<br>80<br>ae<br>Pann<br>40<br>CE<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>Fig 21.   Typical Stored Charge vs. dif/dt<br>7  2018-07-10<br>=<br>QRR (nC)<br>**----- End of picture text -----**<br>


Cinfineon 

IRFB7434PbF 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

**==> picture [157 x 87] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V ae<br>tp 0.01<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

**==> picture [21 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

**==> picture [172 x 117] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs A (th) !| |<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

8 

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IRFB7434PbF ~~__LLL~~ 

## ~~Cinfineon~~ 

**TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

**==> picture [487 x 94] intentionally omitted <==**

**----- Start of picture text -----**<br>
E X A M P L E : T H IS  IS  A N  IR F 1 0 1 0<br>L O T  C O D E  1 7 8 9 IN T E R N A T IO N A L P A R T  N U M B E R<br>A S S E M B L E D  O N  W W  1 9 ,  2 0 0 0 R E C T IF IE R<br>IN  T H E  A S S E M B L Y  L IN E  " C " L O G O<br>D A T E  C O D E<br>Y E A R  0  =  2 0 0 0<br>N o t e :  " P "  in  a s s e m b ly  lin e  p o s it io n A S S E M B L Y<br>in d ic a t e s  " L e a d  -  F r e e " L O T  C O D E W E E K  1 9<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

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IRFB7434PbF ~~__LLL~~ 

IRFB7434PbF ~~Cinfineon __LLL~~ **Qualification Information** Industrial **Qualification Level** (per JEDEC JESD47F)[† ] **Moisture Sensitivity Level** TO-220 N/A **RoHS Compliant** Yes ~~———~~ † Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**|**Comment**|
|---|---|
|4/22/2014|<br>Updated data sheet with new IR corporate template.<br><br>Updated package outline and part marking on page 9.<br><br>Added bulletpoint in the  Benefits  "RoHS Compliant,Halogen -Free" onpage 1.|
|11/18/2014|<br>Updated EAS (L =1mH)= 1098mJ  on page 2<br><br>Updated note 9  “Limited byTJmax,startingTJ= 25°C,L = 1mH,RG= 50,IAS= 47A,VGS=10V”.  onpage 2|
|07/10/2018|<br>Updated datasheet with corporate template.<br><br>Corrected typo for Fig10(package limit from 10ms curve to DC curve)–onpage 5|



## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **IMPORTANT NOTICE** 

**Edition 2016-04-19** The information given in this document shall in no event **Published by** be regarded as a guarantee of conditions or **Infineon Technologies AG characteristics  (“Beschaffenheitsgarantie”) . 81726 Munich, Germany** 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the **© 2016 Infineon Technologies AG.** application of the product, Infineon Technologies **All Rights Reserved.** hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third **Do you have a question about this** party. **document? Email:** erratum@infineon.com **is** 

**Email:** erratum@infineon.com In addition, any information given in this document **is subject to customer’s compliance with its** obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **ifx1** Infineon Technologies in **customer’s applications.** 

The data contained in this document is exclusively intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, **Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

10 

2018-07-10 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFB7434PBF/power-mosfet-n-channel-40-v-195-a-1600-ohm-to)
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- [Supplier page](https://es.farnell.com/infineon/irfb7434pbf/mosfet-n-ch-40v-195a-to-220ab/dp/2253785)
---

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