# Power MOSFET, N Channel, 150 V, 60 A, 0.032 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8657998/)

**URL**: https://novapart.co/products/IRFB61N15DPBF/power-mosfet-n-channel-150-v-60-a-0032-ohm-to
**SKU**: IRFB61N15DPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.0000
**Stock**: 50+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 330W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 60A |
| Drain Source On State Resistance | 0.032ohm |
| Gate Source Threshold Voltage Max | 5.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8657998/)

PD- 95621 

## **SMPS MOSFET** 

## IRFB61N15DPbF 

HEXFET Power MOSFET 

## **Applications** 

High frequency DC-DC converters Motor Control Uninterrutible Power Supplies Lead-Free 

|**VDSS**|**RDS(on)max**|**ID**|
|---|---|---|
|**150V**|**0.032**Ω|**60A**|



## **Benefits** 

Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

Fully Characterized Avalanche Voltage and Current 

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TO-220AB<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

a **Parameter Max. Units** ~~a~~ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 60 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 42 A a IDM Pulsed Drain Current 250 ~~—————————————— ae ee~~ PD @TA = 25°C Power Dissipation 2.4 W ~~>~~ PD @TC = 25°C Power Dissipation 330 ~~>of~~ Linear Deratin ~~To~~ g Factor 2.2 W/°C VGS Gate-to-Source Voltage ± 30 V ~~—~~ dv/dt Peak Diode Recovery dv/dt 3.7 ~~—~~ V/ns TJ Operating Junction and -55  to + 175 ~~LL~~ TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~ee ee a~~ Mounting  torqe,  6-32  or M3  screw 10 lbf•in (1.1N•m) ~~ee~~ ee 

## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.45|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



Notes through are  on page 8 

www.irf.com 

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## IRFB61N15DPbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>es|**Min. **<br>es|**Typ. **<br>es|**Max.**<br>es|**Units**<br>es|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~a~~|Drain-to-Source Breakdown Voltage<br>~~ee~~<br>~~a~~|150<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ<br>~~a~~|JBreakdown Voltage Temp. Coefficient –––    0.18   –––     V/°C    Reference to 25°C, I<br>~~aee~~|–––    0.18   –––     V/°C    Reference to 25°C, I|–––    0.18   –––     V/°C    Reference to 25°C, I|–––    0.18   –––     V/°C    Reference to 25°C, I|–––    0.18   –––     V/°C    Reference to 25°C, I|–––    0.18   –––     V/°C    Reference to 25°C, ID= 1mA<br>~~@~~|
|RDS(on)<br>~~a~~|Static Drain-to-Source On-Resistance<br>~~aee~~|–––|–––|0.032|Ω|VGS= 10V, ID= 36A<br>~~@~~|
|VGS(th)<br>|Gate Threshold Voltage<br>~~ee~~<br>~~a~~<br>~~ee eee~~|3.0<br>~~a~~<br>~~eee~~|–––<br>~~a~~<br>~~eee~~|5.5<br>~~a~~<br>~~eee~~|V<br>~~a~~<br>~~eee~~|VDS= VGS, ID= 250µA<br>~~@~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ee eee~~<br>~~**|**~~|–––<br>~~eee~~<br>~~**|**~~|–––<br>~~eee~~|25<br>~~eee~~|µA<br>~~eee~~<br>||VDS= 150V, VGS= 0V|
|||–––<br>~~eee~~<br>~~**|**~~|–––<br>~~eee~~<br>||250<br>~~eee~~<br>|||VDS= 120V, VGS= 0V, TJ= 150°C|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee eee~~<br>~~**|**~~<br>~~es~~|–––<br>~~eee~~<br>~~**|**~~<br>~~es~~|–––<br>~~eee~~<br>~~es~~|100<br>~~eee~~<br>~~es~~|nA<br>~~eee~~|VGS= 30V|
||Gate-to-Source Reverse Leakage<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~|-100<br>~~es~~||VGS= -30V|



**Dynamic @ TJ = 25°C (unless otherwise specified)** 

||||~~ee~~|~~ee~~|||||||
|---|---|---|---|---|---|---|---|---|---|---|
||**Parameter**<br>ee||**Min. **<br>ee<br>~~ee~~|**Typ. **<br>ee<br>~~ee~~|**Max.**<br>ee||**Units**<br>ee|**Conditions**|||
|gfs|Forward Transconductance<br>~~ss~~||22<br>~~ee ~~<br>~~ss~~|–––<br> ~~ee~~<br>~~ss~~|–––<br>~~ss~~||S<br>~~ss~~|VDS= 50V, ID= 37A|||
|Qg|Total Gate Charge<br>~~a~~||–––<br>~~a~~|95      140                I<br>~~a~~|95      140                I<br>~~a~~||95      140                I<br>nC<br>~~dr~~|95      140                ID= 37A<br>VDS= 120V<br>VGS= 10V,|||
|Qgs|Gate-to-Source Charge<br>~~es~~||–––<br>~~es~~|26<br>~~es~~|39<br>~~es~~||||||
|Qgd<br>Pp|Gate-to-Drain("Miller")Charge<br>~~es~~<br>Pp||–––<br>~~es~~<br><br>~~dr~~|45<br>~~es~~<br><br>~~dr~~|68<br>~~es~~<br><br>~~dr~~||||||
|td(on)<br>Pp|Turn-On Delay Time<br>Ppor—“(s~‘“‘“sé‘“‘“‘“‘i‘c;||–––<br>or—“(s~‘“‘“sé‘“‘“‘“‘i‘c;<br>~~dr~~|18<br>or—“(s~‘“‘“sé‘“‘“‘“‘i‘c;<br>~~dr~~|–––<br>or—“(s~‘“‘“sé‘“‘“‘“‘i‘c;<br>~~dr~~||ns<br>~~dr~~|VDD= 75V<br>ID= 37A<br>RG= 1.8Ω<br>VGS= 10V<br>~~@~~|||
|tr<br>Pp<br>~~Rs~~|Rise Time<br>Pp<br>~~Rs~~||–––<br><br>~~dr~~<br>~~Rs~~|110<br><br>~~dr~~<br>~~Rs~~|–––<br><br>~~dr~~<br>~~Rs~~||||||
|td(off)<br>a|Turn-Off Delay Time<br>~~ee~~||–––<br>~~ee~~|28<br>~~ee~~|–––<br>~~ee~~||||||
|tf<br>~~|~~|Fall Time<br>~~|~~||–––<br>~~|~~|51<br>~~|~~|–––<br>~~|~~||||||
|Ciss<br>~~|~~<br>Rs|Input Capacitance<br>~~|~~<br>~~a~~<br>||–––<br>~~|~~<br>~~a~~<br>|3470<br>~~|~~<br>~~a~~<br>|–––<br>~~|~~<br>~~a~~<br>||pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz<br>~~@~~|||
|Coss<br>Rs<br>Rs|Output Capacitance<br>~~a~~<br>~~eG~~||–––<br>~~a~~<br>~~eG~~|690<br>~~a~~<br>~~eG~~|–––<br>~~a~~<br>~~eG~~||||||
|Crss<br>Rs<br>Rs<br>es|Reverse Transfer Capacitance<br>~~a~~<br>~~eG~~<br>~~a~~||–––<br>~~a~~<br>~~eG~~<br>~~a~~|150<br>~~a~~<br>~~eG~~<br>~~a~~|–––<br>~~a~~<br>~~eG~~<br>~~a~~||||||
|Coss<br><br>Rs<br>es|Output Capacitance<br>~~eG~~<br>~~a~~||–––<br>~~eG~~<br>~~a~~|4600<br>~~eG~~<br>~~a~~|–––<br>~~eG~~<br>~~a~~|||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz|||
|Coss<br>es<br>Rs<br>Rs|Output Capacitance<br>~~a~~<br>Rs<br>a||–––<br>~~a~~<br>Rs|310<br>~~a~~<br>Rs|–––<br>~~a~~<br>Rs|||VGS= 0V,  VDS= 120V,  ƒ = 1.0MHz<br>®|||
|Cosseff.<br>Rs|Effective Output Capacitance<br>a||–––|580|–––|||VGS= 0V, VDS= 0V to 120V<br>®|||
|**Avalanche Characteristics**<br>Rsa<br>®<br>ee|||||||||||
|ee<br>SE||**Parameter**<br><br>||||**Typ.**<br><br>O<br>|||**Max.**<br><br>|**Units**<br><br>|
|EAS<br>ee©<br>SE<br>a||Single Pulse Avalanche Energy<br>©<br>nn||||–––<br>©<br>O<br>nn|||520<br>©<br>nn|mJ<br>©<br>nn|
|IAR<br>SE<br>a||Avalanche Current<br>nn||||–––<br>O<br>nn|||37<br>nn|A<br>nn|
|EAR<br>SE<br>a||Repetitive Avalanche Energy<br>nn<br>©||||–––<br>O<br>nn|||33<br>nn|mJ<br>nn|



## **Avalanche Characteristics** 

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Parameter Typ. Max. Units<br>ee© EAS Single Pulse Avalanche Energy ––– 520 mJ<br>IAR Avalanche Current ––– 37 A<br>SEa EAR nn Repetitive Avalanche Energy © O ––– 33 mJ<br>Diode Characteristics<br> Parameter Min. Typ. Max. Units Conditions<br>IS Continuous Source Current ––– ––– 60 MOSFET symbol D<br>ne (Body Diode) ae showing  the<br>ISM Pulsed Source Current ––– ––– 250 integral reverse G<br>(Body Diode) p-n junction diode. S<br>VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 37A, VGS = 0V ®<br>Se trr SSSes Reverse Recovery Time ––– 180 270 ns TJ = 25°C, IF = 37A (nt<br>Qrr Reverse RecoveryCharge ––– 1340 2010 nC di/dt = 100A/µs<br>—+—_ ton PT Forward Turn-On Time —_}—_ Intrinsic turn-on time is negligible (turn-on is dominated by L @ S+LD)<br>2 www.irf.com<br>**----- End of picture text -----**<br>


## IRFB61N15DPbF 

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 1000 VGS  1000 VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br> 100 6.0V 1 201KPatil 6.0V feLs<br>5.5V ee 5.5V HT LTELL<br>5.0V  100 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br> 10<br>a  10 Sere<br> 1 2 | tt 4.5V et<br> 1<br>7<br>0.1<br>4.5V<br>=<br>0.01 mdiet te 20µs PULSE WIDTHT  = 25J CEL °C 0.1 HH| re 20µs PULSE WIDTHT  = 175J EE °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 3.5 ID = 62A<br>aseeees<br>eeesee 3.0<br> 100 T  = 175  CJ °<br>2.5<br>op e] |<br>== —— Tee<br> 10<br>2.0<br>Bes<br>ae ee ee es ee ee<br>Seea oe 1.5 eeSS000578000eeeeeecaue<br> 1<br>T  = 25  CJ °<br>1.0<br>fp fp HtititAt ttt<br>0.1 oy | | Poet tT tt tt<br>0.5<br>V      = 25VDS<br>0.01 = rT | | 20µs PULSE WIDTH 0.0 PTT eT eeett VGS = 10V<br>4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRFB61N15DPbF 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = Cgs + Cgd,   Cds    SHORTED<br>Crss    = Cgd<br>FH C  = C + C<br>10000 oss   ds  gd<br>ee Ciss eel<br>1000 P SEC CETTE (PETH<br>Coss<br>a | |<br>Crss<br>100<br>a ee lll<br>PCEAE-CEREE-<br>10 PE<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


## **Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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 1000<br>SanaeeaaaeS=<br> 100<br>SEnEe T  = 175  CJ ° Ee aes<br> 10<br>| At yt | |<br> 1 pfelf!l T  = 25  CJ ° ee<br>FLL V      = 0 V  — GS<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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20<br>ID = 37A<br>VDS = 120V<br>VDS = 75V<br>16 LET TET VDS = 30V Sa<br>12 LD<br>PTT<br>8 |] | tp ery Ty yl<br>4 TTT<br>FOR TEST CIRCUIT<br>= 0 PAL LET SEE FIGURE       13<br>0 20 40 60 80 100 120 140<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>ccietcpegess esng<br>100<br>a ril SUH CE<br>100µsec<br>10<br>1msec<br>m orse} Peet ed<br>1 10msec<br>0 || RN<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse TCO on<br>0.1<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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## IRFB61N15DPbF 

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60<br>BNE<br>50 PUNE<br>pit<br>40 Pt tT PNTT TAA EL<br>a eeeeeNee ee<br>30 |Pi| |tT| |te ||| |EEN|| | Ne| |EI|<br>20 SE RERSEEEENG<br>Pit te ty te Ee<br>10 Pi tT ett TT TT TA<br>Pitt ET TT | Tt TY<br>0 PE eT TT TT | Ty<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current Vs. Case Temperature 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>\¢ >< >! <p<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 10b.** Switching Time Waveforms 

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 1<br>a ee<br>0.1 ie D = 0.500.20 e ee<br>0.10<br>a a a a eeee eee<br>0.05 ee<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) PDM<br>0.01 eo Seppal al eeO ll|Qp t1<br>t2<br>es ee<br>a<br>Notes:<br>1. Duty factor D = t   / t1 2<br>Er 2. Peak T J = P DM x  Z thJC + TC<br>0.001 A -<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRFB61N15DPbF 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>ei<br>20VVGS<br>tp 0.01Ω<br>P ry<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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**----- Start of picture text -----**<br>
V(BR)DSS<br>— tp 4<br>/ al<br>IAS a n<br>**----- End of picture text -----**<br>


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1200<br>ID<br>1000 P|GaleatT tT TOP 15A 26A<br>BOTTOM 37A<br>NER<br>PAPE<br>800<br>600 NREIXNPi NM fT pT<br>KNEON| EE<br>400 INNRON TE<br>P|RANE<br>200 SRR SNARES<br>0 SRRaaaSSN~e<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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**----- Start of picture text -----**<br>
QG<br>QGS QGD<br>Ale —<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>+<br>oe ee D.U.T. -VDS<br>VGS<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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## IRFB61N15DPbF 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ) Current ==<br>Ty) di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent<br>S$<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® Power MOSFETs 

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## IRFB61N15DPbF 

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10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>1.22 (.048)<br>6.47 (.255)<br>= CF 4 6.10 (.240)<br>15.24 (.600) | an C4 it<br>14.84 (.584) LEAD ASSIGNMENTS<br>1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE  IGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>| toreT 3- SOURCE4- DRAIN       4 - DRAIN 3- EMITTER4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X ais [1.40 (.055)] 3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>1.15 (.045) 0.36  (.014)        M    B   A   M 2.92 (.115)<br>2.64 (.104)<br>re 2.54 (.100) || T<br>2X<br>NOTES:<br>     1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.<br>     2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.<br>Part Marking Information<br>EXAMPLE: T HIS  IS  AN IR F1010<br>LOT  CODE  1789<br>AS S EMBLE D ON WW 19, 1997 INT ERNAT IONAL PART  NU MBER<br>IN T HE  AS S EMBLY LINE "C" RECT IFIER<br>LOGO<br>Note: position indicates "Lead-Free"  "P" in assembly line DAT E CODE<br>AS S EMBLY YEAR  7 =  1997<br>LOT  CODE WEE K 19<br>L INE  C<br>a e<br>**----- End of picture text -----**<br>


® Repetitive rating;  pulse width limited by 6) ISD ≤ 37A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS, max. junction temperature. TJ ≤ 175°C @® Starting TJ = 25°C, L = 0.98mH Pulse width ≤ 400µs; duty cycle ≤ 2%. RG = 25Ω, IAS = 37A, VGS=10V ® Cossoss eff. is a fixed capacitance that gives the same charging time 

® Cossoss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/04 

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8 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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- [Supplier page](https://es.farnell.com/infineon/irfb61n15dpbf/mosfet-n-150v-60a-to-220/dp/8657998)
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