# Power MOSFET, N Channel, 150 V, 35 A, 0.039 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:1831080/)

**URL**: https://novapart.co/products/IRFB5615PBF/power-mosfet-n-channel-150-v-35-a-0039-ohm-to
**SKU**: IRFB5615PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5660
**Stock**: 500+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 144W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 35A |
| Drain Source On State Resistance | 0.039ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1831080/)

## IRFB5615PbF 

## **Features** 

- Key Parameters Optimized for Class-D Audio Amplifier Applications 

- Low RDSON for Improved Efficiency 

- Low QG and QSW for Better THD and Improved Efficiency 

- Low QRR for Better THD and Lower EMI 

|**Key Parameters**|**Key Parameters**|**Key Parameters**|
|---|---|---|
|VDS|150|V|
|RDS(ON)typ. @ 10V|32<br>~~PT~~|m<br>~~PT~~<br>~~ee~~|
|Qgtyp.|26<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~<br>~~eee~~|
|Qswtyp.|11<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~eee~~<br>~~ee~~|
|RG(int)typ.|2.7<br>~~ee~~|Ω<br>~~eee~~<br>~~ee~~<br>~~ee~~<br>~~eee~~|
|TJmax|175<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~<br>~~eee~~|



- 175°C Operating Junction Temperature for 

- Ruggedness 

- Can Deliver up to 300W per Channel into Ω oad in Half-Bridge Configuration Amplifier 

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D<br>D<br>Ye.<br>G<br>S<br>D<br>G<br>S<br>TO-220AB<br>G D S<br>Gate Drain Source<br>**----- End of picture text -----**<br>


## **Description** 

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~a~~<br>~~Sp~~|150<br>~~a~~<br>~~Sp~~|V<br>~~Sp~~<br>~~ne~~|
|VGS|Gate-to-Source Voltage<br>~~Sp~~<br>~~es~~|±20<br>~~Sp~~<br>~~ne~~||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V<br>~~a~~<br>~~es~~|35<br>~~a~~<br>~~ne~~|A<br>~~ne~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~a~~<br>~~es~~|25<br>~~a~~<br>~~ne~~||
|IDM<br>~~a~~|Pulsed Drain Current<br>~~es~~<br>~~a~~|140<br>~~ne~~||
|PD@TC= 25°C<br>~~a~~|Power Dissipation<br>~~es~~<br>~~a~~<br>~~a~~|144<br>~~ne~~<br>~~a~~|W<br>~~ne~~|
|PD@TC= 100°C<br>~~a~~|Power Dissipation<br>~~a~~|72||
|~~a~~|Linear DeratingFactor<br>~~a~~<br>~~a~~|0.96<br>~~a~~|W/°C<br>~~a~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|°C|
||Soldering Temperature, for 10 seconds<br>(1.6mm from case)|300||
||Mountingtorque,6-32 or M3 screw<br>~~nN~~|10lb n(1.1N m)<br>~~nN~~|~~nN~~|



Notes 0) hrough 3) are on page 2 

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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage|150<br>~~ds~~|–––<br>~~ds~~|–––<br>~~Gs~~|V<br>~~QO~~|VGS= 0V, ID= 250µA|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~**e**e~~|–––<br>~~es~~<br>~~ds~~<br>~~Gs~~<br>|0.18<br>~~es~~<br>~~ds~~<br>~~DQ~~<br>|–––<br>~~es~~<br>~~Gs~~<br>~~DQ~~<br>|V/°C<br>~~es~~<br>~~QO~~<br>~~GO~~<br>|Reference to 25°C, ID= 1mA<br>~~es~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~es~~<br>~~**e**e~~|–––<br>~~es~~<br>~~ds~~<br>~~es~~<br>~~Gs~~<br>~~ne~~|32<br>~~es~~<br>~~ds~~<br>~~es~~<br>~~DQ~~<br>~~ee~~|39<br>~~es~~<br>~~Gs ~~<br>~~es~~<br>~~DQ~~<br>~~ee~~|mΩ<br>~~es~~<br> ~~QO~~<br>~~es~~<br>~~GO~~<br>~~ee~~|VGS= 10V, ID= 21A<br>~~es~~<br>~~es~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~<br>~~**e**e~~|3.0<br>~~es~~<br>~~Gs~~<br>~~ne~~<br>~~es~~|–––<br>~~es~~<br>~~DQ~~<br>~~ee~~|5.0<br>~~es~~<br>~~DQ~~<br>~~ee~~|V<br>~~es~~<br>~~GO~~<br>~~ee~~|VDS= VGS, ID= 100µA<br>~~es~~<br>~~"|~~|
|∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~**e**e~~<br>~~s~~|–––<br>~~Gs~~<br>~~ne~~<br>~~s~~<br>~~es~~|-13<br>~~DQ~~<br>~~ee~~<br>~~s~~|–––<br>~~DQ~~<br>~~ee~~<br>~~s~~|mV/°C<br>~~GO~~<br>~~ee~~<br>~~s~~||
|IDSS|Drain-to-Source Leakage Current<br>~~**e**e ~~<br>~~s~~<br>~~EE~~|–––<br>~~Gs ~~<br> ~~ne ~~<br>~~s~~<br>~~es~~<br>~~EE~~|–––<br> ~~DQ~~<br> ~~ee ~~<br>~~s~~<br>~~EE~~|20<br>~~DQ ~~<br> ~~ee~~<br>~~s~~<br>~~EE~~|µA<br> ~~GO~~<br>~~ee~~<br>~~s~~<br>~~EE~~|VDS= 150V, VGS= 0V<br>~~EE~~<br>~~"|~~|
|||–––<br>~~EE~~<br>~~ee~~|–––<br>~~EE~~<br>~~ee~~|250<br>~~EE~~<br>~~ee~~||VDS= 150V, VGS= 0V, TJ= 125°C<br>~~EE~~<br>~~"|~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~a~~|–––<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~|100<br>~~a~~<br>~~ee~~|nA<br>~~a~~<br>~~GO~~|VGS= 20V<br>~~"|~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~ds~~|–––<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~ds~~|-100<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~GO~~||VGS= -20V<br>~~a~~|
|gfs|Forward Transconductance<br>~~rs~~|35<br>~~ee~~<br>~~rs~~<br>~~ds~~<br>~~es~~|–––<br>~~ee~~<br>~~rs~~<br>~~ds~~|–––<br>~~ee~~<br>~~rs~~<br>~~GO~~|S<br>~~rs~~<br>~~GO~~|VDS= 50V, ID= 21A<br>~~rs~~|
|Qg|Total Gate Charge<br>~~es~~|–––<br>~~ds~~<br>~~es~~<br>~~es~~<br>~~ee~~|26<br>~~ds ~~<br>~~es~~|40<br> ~~GO~~<br>~~es~~|nC<br>~~GO~~|See Fig. 6 and 19<br>VDS=75V<br>VGS= 10V<br>ID= 21A|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~es~~|6.4<br>~~ee~~|–––<br>~~ee~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~es~~|2.2<br>~~es~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain Charge|–––<br>~~es~~<br>~~es~~|9.0|–––|||
|Qgodr|Gate Charge Overdrive<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~ee~~|8.9<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~ee~~<br>|11<br>~~es~~<br>~~es~~<br>~~sO~~|–––<br>~~es~~<br>~~sO~~|||
|RG(int)|Internal Gate Resistance<br>~~es~~<br>~~Gs~~<br>~~es~~|–––<br>~~es~~<br>~~ee ~~<br>~~Gs~~<br>~~es~~|2.7<br>~~es~~<br> ~~es~~<br>~~Gs~~<br>~~sO~~|5.0<br>~~es~~<br>~~Gs~~<br>~~sO~~|Ω<br>~~Gs~~|~~Gs~~<br>@|
|td(on)|Turn-On DelayTime<br>~~Gs~~<br>~~es~~|–––<br>~~Gs~~<br>~~es~~<br>~~es~~|8.9<br>~~Gs~~<br>~~sO~~|–––<br>~~Gs~~<br>~~sO~~|ns<br>~~Gs~~|RG= 2.4Ω<br>VDD= 75V, VGS= 10V<br>ID= 21A<br>~~Gs~~<br>@|
|tr|Rise Time<br>~~es ~~<br>~~es~~|–––<br> ~~es~~<br>~~es~~<br>~~es~~|23.1<br>~~sO~~<br>~~es~~|–––<br>~~sO~~<br>~~es~~|||
|td(off)|Turn-Off DelayTime|–––<br>~~es~~<br>~~es~~|17.2|–––|||
|tf|Fall Time<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~|13.1<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Ciss|Input Capacitance<br>~~a~~|–––<br>~~es~~<br>~~a~~<br>~~es~~<br>~~es~~|1750<br>~~a~~<br>~~es~~|–––<br>~~a~~|pF<br>~~————+4,],~~|VDS= 50V<br>VGS= 0V<br>ƒ= 1.0MHz,          See Fig.5|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~|155<br> ~~es~~<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance|–––<br>~~es~~<br>~~es~~|40|–––|||
|Coss|Effective Output Capacitance<br>~~es~~<br>~~————+4,],~~|–––<br>~~es~~<br>~~es~~<br>~~————+4,],~~|175<br>~~es~~<br>~~————+4,],~~|–––<br>~~es~~<br>~~————+4,],~~||VGS= 0V, VDS= 0V to 120V<br>~~————+4,],~~<br>~~&~~|
|LD|Internal Drain Inductance<br>~~————+4,],~~|–––<br>~~es~~<br>~~————+4,],~~|4.5<br>~~————+4,],~~|–––<br>~~————+4,],~~|nH<br>~~————+4,],~~|S<br>D<br>G<br>Between  lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~————+4,],~~<br>~~&~~|
|LS|Internal Source Inductance<br>~~————+4,],~~<br>~~eo~~|–––<br>~~————+4,],~~<br>~~eo~~|7.5<br>~~————+4,],~~<br>~~eo~~|–––<br>~~————+4,],~~<br>~~eo~~|||



> ~~a~~ Repetitive rating;  pulse width limited by max. junction temperature. ~~5~~ Rθ is measured at TTJ of approximately 90°C. is measured at TTJ of approximately 90°C. of approximately 90°C. 

> Repetitive rating;  pulse width limited by max. junction temperature. Rθ is measured at TTJ of approximately 90°C. ~~@~~ Starting TJ = 25°C, L = 0.51mH, RG = 25Ω, IAS = 21A. © Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive ©) Pulse width ≤ 400µs; duty cycle ≤ 2%. avalanche information 

> © Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive avalanche information 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>12V 12V<br>100 10V 10V<br>8.0V7.0V 100 8.0V7.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>10 BOTTOM 5.0V BOTTOM 5.0V<br>Ze | 10 e e<br>5.0V<br>1<br>e pee | I<br>1<br>5.0V<br>0.1<br>≤60µs PULSE WIDTH ≤60µs PULSE WIDTH<br>0.01 PT Tj = 25°C Pi 0.1 eli Tj = 175°C anil<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 3.0<br>ID = 21A<br>SS SS SSeS PTT TTT Ty<br>oe VGS = 10V PEEL.<br>a ee eee 2.5<br>100<br>TJ = 175°C<br>——_ ———_— So HY<br>SS 2.0 P T ETT [TYE]<br>TJ = 25°C<br>SORGRGE5 4000<br>10<br>a o) 7 TE<br>1.5<br>SesS2 ee ee ee eee eee e aey<br>1<br>A o 1.0 S EES/ 400000<br>VDS = 50V<br>PR Bap Zeneeeee<br>≤60µs PULSE WIDTH<br>PAT Pett<br>0.1 0.5 tT ttt<br>2 4 6 8 10 12 14 16 -60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>=i rss   gd<br>C = C + C<br>10000 oss   ds  gd<br>C<br>iss<br>1000<br>C<br>oss<br>C<br>rss<br>100 S EATS SFE Hil<br>ee |ee<br>10 A<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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14.0<br>ID= 21A<br>12.0<br>[ti VDS= 120V t y<br>10.0 VDS= 75V<br>VDS= 30V<br>8.0<br>6.0<br>4.0<br>r t | | | od<br>2.0<br>0.0 Ji [|i}] tt<br>0 5 10 15 20 25 30 35<br> QG,  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage 

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1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>ee en p z err |r<br>100 1 00µsec<br>a ee7es ” ee 2 aanee ee eee ee Sai} 1msec mE " Po<br>= TJ = 175°C 10 PO 10msec S a<br>TJ = 25°C<br>10<br>| | f f | | PP DC A L RRe Fy<br>1<br>Tc = 25°C — a<br>VGS = 0V Tj = 175°CSingle Pulse<br>1.0 0.1 ak i l A<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 7.   Typical Source-Drain Diode Forward Voltage Fig 8.   Maximum Safe Operating Area<br>40 6.0<br>35 P t | | tt 5.5 aP a ee eeaee ee eee<br>a P| Pet ft ft yt ft fT<br>5.0<br>><br>30 P SA — — ea ee eetee ee ee ee<br>4.5<br>25 N ee55  eee OSe S S S,esaS<br>4.0<br>A SSO<br>a N Se ee eee<br>20 3.5<br>ID = 100µA<br>15 \ 3.0 | = | ID = 250uA AAZKAANANI<br>2.5 ID = 1.0mA<br>| EN\ — to SS<br>10 P ot | | ID = 1.0A ) | || N)]|NANI KR]<br>2.0 |_ | P|<br>5 P EE EE Ie eUE UNS<br>1.5<br>0 Potot | | ct EN 1.0 a F eEEee ee ee e eeeee<br>25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>ID,  Drain-to-Source Current (A)<br>ID,  Drain Current (A)<br>VGS(th), Gate threshold Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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40<br>35 P t | | tt<br>a<br>><br>30 P SA — —<br>25 N ee55  eee<br>a N<br>20<br>15 | EN\<br>10 P ot<br>5 P EE EE<br>0 Potot | | ct EN<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Threshold Voltage vs. Temperature 

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10<br>a a ee ee eee ee ee ee<br>1 e eeeeee<br>D = 0.50<br>e e<br>___ 0.20 a ee eeeeeee ee ee eeeeee e e ee e<br>0.1 e 0.020.010.050.10 e τJ τJτ1τ1 R1 R1 τ2 τR22 R2 Rτ33 R τ3 3 τR4τ4R4 4 τCτ HEE Ri (°C/W)   0.02324    0.0000080.26212    0.0001060.50102    0.001115 τi (sec)<br>a e T T T T |<br>0.01 a oe mm Ci= Ciτi/Rii/Ri | 0.25880    0.005407<br>Notes:<br>PEE SINGLE PULSE SEE EE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthjc + Tc<br>EEE Prt ns LTil<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 11.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


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0.4 500<br>0.35 | | tt I D  = 21A 450 P TT ID<br>TOP          2.8A<br>M T<br>ACEC 400 TT Ty 5.3A<br>0.3<br>BOTTOM 21A<br>350<br>0.25 CECCe A YE<br>300<br>0.2 eT tT ty yt 250 P ERE<br>200<br>0.15<br>PT Tt ty S ENSE EEEEEE<br>150<br>rT Ty B NERNSEEEEEE<br>0.1 T = 125°C<br>J<br>100<br>0.05 To —— P EPIN TTT<br>50<br>=== P ERERA<br>0 ee TJ = 25°C 0 P CC<br>PPR SS<br>4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>   On-Resistance Vs. Gate Voltage Fig 13.   Maximum Avalanche Energy Vs. Drain Current<br>100<br>Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche<br>Se pulsewidth, tav, assuming ∆Tj = 150°C and  Ht<br>Tstart =25°C (Single Pulse)<br>2 S e HI<br>0.01<br>10<br>0 SE S200<br>0.05<br>0.10<br>| es Se<br>1<br>| Allowed avalanche Current vs avalanche  a a ee<br>pulsewidth, tav, assuming ∆Τ j = 25°C and  Ss<br>Tstart = 150°C.<br>SsP deee<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>EAS , Single Pulse Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


## **Fig 12.** On-Resistance Vs. Gate Voltage 

**Fig 13.** Maximum Avalanche Energy Vs. Drain Current 

## **Fig 14.** Typical Avalanche Current Vs.Pulsewidth 

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120<br>TOP          Single Pulse<br>BOTTOM   1.0% Duty Cycle<br>100 ID = 21A<br>80<br>S ooo<br>60<br>N LT<br>40<br>L LANETE<br>20<br>T ENSE<br>BERERRESSNSE<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 15.** Maximum Avalanche Energy Vs. Temperature 

**Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com)** 

1. Avalanche failures assumption: 

- Purely a thermal phenomenon and failure occurs at a 

- temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max) is exceeded 

3. Equation below based on circuit and waveforms shown in Figures 17a, 17b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. ∆T = Allowable rise in junction temperature, not to exceed 

- Tjmax (assumed as 25°C in Figure 14, 15). 

- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see figure 11) 

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PD (ave) = 1/2 ( 1.3·BV·Iav) = A T/ ZthJC<br>Iav = 2 A T/ [1.3·BV·Zth]<br>EAS (AR) = PD (ave)·tav<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— — D = —— Period<br>) [©)] Circuit    • Low StrayLayoutInductConsiderations ) t V | GS=10V<br>•<br>-<br>+ CurrentowLeakageTransformerInductance 2) D.U.T. ISD Waveform<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt /<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 _ VDD<br>ma<br>•  Re-Applied<br>•  riversame type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4) •  vidtcontrolled by Rg VDD -<br>•  D.U.T. - Device Under Test ee ee<br>Ripple  ≤ 5% ISD<br>o” sp controlled by Duty Factor"D" ®<br>* Vgg = 5V for Logic Level Devices<br>Fig 16. eak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® ower MOSFETs<br>V(BR)DSS<br>15V ~—— tp -><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>¢ 20V ab<br>tp 0.01 A Ω IAS —<br>**----- End of picture text -----**<br>


**Fig 17a.** Unclamped Inductive Test Circuit 

**Fig 17b.** Unclamped Inductive Waveforms 

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VDS<br>90%<br>\<br>10%<br>/\<br>VGS ele ns<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


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+<br>-<br> 1<br> 0.1 %<br>**----- End of picture text -----**<br>


## **Fig 18a.** Switching Time Test Circuit 

## **Fig 18b.** Switching Time Waveforms 

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Id<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T. Vds<br>| 50KΩ fl<br>12V .2µF<br>| .3µF<br>|[| ii) +<br>D.U.T. -VDS<br>Vgs(th)<br>VGS<br>fi 3mA i} |<br>se IG ID la g pl e v v i s a p , !<br>Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


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Vds<br>fl Vgs<br>Vgs(th)<br>i} |<br>la g pl e v v i s a p , !<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 19a.** Gate Charge Test Circuit 

**Fig 19b.** Gate Charge Waveform 

www.irf.com 

6 

TO-220AB packages are not recommended for Surface Mount Application. 

**Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2008 

www.irf.com 

7 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFB5615PBF/power-mosfet-n-channel-150-v-35-a-0039-ohm-to)
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- [Supplier page](https://es.farnell.com/infineon/irfb5615pbf/mosfet-audio-n-ch-150v-35a-to220ab/dp/1831080)
---

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