# Power MOSFET, N Channel, 100 V, 96 A, 0.01 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:9052046/)

**URL**: https://novapart.co/products/IRFB4410PBF/power-mosfet-n-channel-100-v-96-a-001-ohm-to-220
**SKU**: IRFB4410PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8790
**Stock**: 500+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:96A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Power Dissip

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 250W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 20V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 96A |
| Drain Source On State Resistance | 0.01ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9052046/)

## IRFB4410PbF IRFS4410PbF IRFSL4410PbF 

## **Applications** 

HEXFET Power MOSFET 

High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply D High Speed Power Switching **VDSS 100V** ~~:~~ Hard Switched and High Frequency Circuits **RDS(on)   typ. 8.0m** G **max. 10m** S **IDD** ~~Cs~~ **88AA** 

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G               max. 10m<br>S IDD Cs 88AA<br>DS DS DS<br>G G G<br>TO-220AB D [2] Pak TO-262<br>IRFB4410PbF IRFS4410PbF IRFSL4410PbF<br>**----- End of picture text -----**<br>


## **Benefits** 

Improved  Gate, Avalanche and Dynamic  dV/dt Ruggedness 

Fully Characterized Capacitance and Avalanche SOA 

Enhanced body diode dV/dt and dI/dt Capability Lead-Free 

## **Absolute Maximum Ratings** 

|**Symbol**|**Parameter**<br>**Units**<br>**Max.**|
|---|---|
|ID@ TC= 25°C<br>ID@ TC= 100°C<br>IDM<br>PD@TC= 25°C|Continuous Drain Current, VGS@ 10V<br>A<br>Continuous Drain Current, VGS@ 10V<br>Pulsed Drain Current<br>Maximum Power Dissipation<br>W<br>200<br>88<br>63<br>380<br>~~a~~<br>~~©”~~<br>~~ee~~<br>~~oo~~<br>~~aa~~|
||Linear DeratingFactor<br>W/°C<br>1.3<br>~~a~~|
|VGS<br>dv/dt|Gate-to-Source Voltage<br>V<br>Peak Diode Recovery<br>V/ns<br>19<br>± 20<br>~~a~~<br>~~a~~|
|TJ|Operating Junction and<br>°C<br>-55  to + 175|
|TSTG|Storage Temperature Range|
||Soldering Temperature, for 10 seconds<br>300|
||(1.6mm from case)|
||Mountingtorque,6-32 or M3 screw<br>10lb in(1.1N m)<br>~~I~~|
|**Avalanche Characteristics**||
|EAS(Thermallylimited)<br>Single Pulse Avalanche Energy<br>mJ<br>IAR<br>Avalanche Current<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>220<br>See Fig. 14, 15, 16a, 16b<br>~~OT~~<br>~~es~~||
|**Thermal Resistance**||
|**Symbol**|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**|
|RθJC<br>RθCS<br>RθJA<br>RθJA|Junction-to-Case<br>–––<br>0.61<br>Case-to-Sink,Flat Greased Surface,TO-220<br>0.50<br>–––<br>°C/W<br>Junction-to-Ambient,TO-220<br>–––<br>62<br>Junction-to-Ambient(PCB Mount) ,D2Pak<br>–––<br>40<br>~~aa~~<br>~~a~~<br>~~T°;~~<br>~~Se~~|



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05/02/07 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**||
|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>100<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>~~a~~||
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>–––<br>0.094<br>–––<br>V/°C<br>Reference to 25°C, ID= 1mA<br>~~pe~~||
|RDS(on)<br>VGS(th)<br>IDSS<br>IGSS|Static Drain-to-Source On-Resistance<br>–––<br>8.0<br>10<br>mΩ<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µA<br>–––<br>–––<br>250<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>200<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-200<br>VGS= 10V, ID= 58A<br>VDS= VGS, ID= 150µA<br>VDS= 100V, VGS= 0V<br>VDS= 100V, VGS= 0V, TJ= 125°C<br>VGS= 20V<br>VGS= -20V<br>~~pe~~<br>~~GO~~<br>~~I~~<br>~~I~~<br>~~G~~<br>~~(~~<br>~~|~~<br>~~|~~<br>~~ee~~<br>~~a~~||
|RG|Gate Input Resistance<br>–––<br>1.5<br>–––<br>Ω<br>f = 1MHz, open drain<br>~~pf~~||
|**Dynamic @ TJ = 25°C (unless otherwise specified)**|||
|**Symbol**|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**||
|gfs<br>Qg|Forward Transconductance<br>120<br>–––<br>–––<br>S<br>Total Gate Charge<br>–––<br>120<br>180<br>nC<br>VDS= 50V, ID= 58A<br>ID= 58A<br>~~OO~~<br>~~GN(~~<br>~~a~~||
|Qgs|Gate-to-Source Charge<br>–––<br>31<br>–––<br>VDS= 80V<br>~~a~~||
|Qgd|Gate-to-Drain("Miller")Charge<br>–––<br>44<br>–––<br>VGS= 10V<br>~~a~~<br>@||
|td(on)<br>tr<br>td(off)<br>tf<br>Ciss<br>Coss<br>Crss|Turn-On DelayTime<br>–––<br>24<br>–––<br>ns<br>Rise Time<br>–––<br>80<br>–––<br>Turn-Off DelayTime<br>–––<br>55<br>–––<br>Fall Time<br>–––<br>50<br>–––<br>Input Capacitance<br>–––<br>5150<br>–––<br>pF<br>Output Capacitance<br>–––<br>360<br>–––<br>Reverse Transfer Capacitance<br>–––<br>190<br>–––<br>ID= 58A<br>RG= 4.1Ω<br>VDD= 65V<br>VGS= 10V<br>VGS= 0V<br>VDS= 50V<br>ƒ= 1.0MHz<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~e~~<br>~~a~~<br>~~aa~~||
|Cosseff. (ER)<br>Effective Output Capacitance(EnergyRelated)<br>–––<br>420<br>–––<br>Cosseff. (TR)<br>Effective Output Capacitance(Time Related)<br>–––<br>500<br>–––<br>**Diode Characteristics**<br>VGS= 0V, VDS= 0V to 80V<br>See Fig.11<br>VGS= 0V, VDS= 0V to 80V<br>See Fig. 5<br>~~a~~<br>@<br>~~>)~~<br>~~@~~|||
|**Symbol**|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**||
|IS<br>ISM<br>VSD<br>trr<br>Qrr<br>IRRM|S<br>D<br>G<br>Continuous Source Current<br>–––<br>–––<br>88<br>A<br>(BodyDiode)<br>Pulsed Source Current<br>–––<br>–––<br>380<br>A<br>(BodyDiode)<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>Reverse Recovery Time<br>–––<br>38<br>56<br>ns<br>TJ= 25°C<br>VR= 85V,<br>–––<br>51<br>77<br>TJ= 125°C<br>IF= 58A<br>Reverse Recovery Charge<br>–––<br>61<br>92<br>nC<br>TJ= 25°C<br>di/dt = 100A/µs<br>–––<br>110<br>170<br>TJ= 125°C<br>Reverse RecoveryCurrent<br>–––<br>2.8<br>–––<br>A<br>TJ= 25°C<br>TJ= 25°C, IS= 58A, VGS= 0V<br>integral reverse<br>p-njunction diode.<br>MOSFET symbol<br>showing  the<br>~~sooo~~<br>~~8~~<br>~~GOD~~<br>~~OG (O~~<br>~~ee~~<br>~~ee~~<br>~~|~~~~**|**~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>;<br>~~|~~<br>~~a~~||
|ton|Forward Turn-On Time<br>Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~Ge~~||



0) Calculated continuous current based on maximum allowable junction © Coss eff. (TR) is a fixed capacitance that gives the same charging time temperature. Package limitation current is 75A. as Coss while VDS is rising from 0 to 80% VDSS. @@ Repetitive rating;  pulse width limited by max. junction Coss eff. (ER) is a fixed capacitance that gives the same energy as temperature. Coss while VDS is rising from 0 to 80% VDSS. ® Limited by TJmax, starting TJ = 25°C, L = 0.14mH When mounted on 1" square PCB (FR-4 or G-10 Material).  For recommended RG = 25Ω, IAS = 58A, VGS =10V. Part not recommended for use footprint and soldering techniques refer to application note #AN-994. above this value. ® Rθ is measured at TJ approximately 90°C. ) ISD ≤ 58A, di/dt ≤ 650A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. 0) RθJC (end of life) for DθJC (end of life) for DJC (end of life) for D(end of life) for D[[2]] Pak and TO-262 = 0.75°C/W.  Note:  This is the maximum © Pulse width ≤ 400µs; duty cycle ≤ 2%. measured value after 1000 temperature  cycles from -55 to 150°C and is 

When mounted on 1" square PCB (FR-4 or G-10 Material).  For recommended footprint and soldering techniques refer to application note #AN-994. 

RθJC (end of life) for DθJC (end of life) for DJC (end of life) for D(end of life) for D[[2]] Pak and TO-262 = 0.75°C/W.  Note:  This is the maximum measured value after 1000 temperature  cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium. 

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1000<br>VGS<br>TOP           15V<br>10V<br>ees a> itl nee 8.0V<br>6.0V<br>100 S e 5.5V<br>5.0V<br>4.8V<br>BOTTOM 4.5V<br>10 ZA<br>See ER aTiti<br>1<br>4.5V<br>≤60µs PULSE WIDTH<br>Tj = 25°C<br>0.1 a CA Co Woo<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>ee ee ee ee a ee ee ee<br>100<br>T = 175°C<br>J<br>FAA EY<br>10 r s<br>TJ = 25°C<br>1 P T AA fp dd<br>Fo<br>VDS = 25V<br>PPAFTL ≤60µs PULSE WIDTH<br>0.1<br>2 3 4 5 6 7 8 9 10<br>VGS, Gate-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>Coss   = Cds + Cgd<br>=<br>10000 ea<br>C<br>iss<br>Soamaiftl|<br>Be  GEER<br>1000 C lho TWA<br>oss<br>e e<br>C<br>100 es|| | LEE| rss  eeEE<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           15V<br>10V<br>ee ees 8.0V<br>6.0V<br>Snayaoa 5.5V5.0V<br>100 4.8V<br>BOTTOM 4.5V<br>en aoe Sean een<br>4.5V<br>10 D Y 2ivemeranina T<br>≤60µs PULSE WIDTH<br>1 pf | PE Tj = 175°C ep HE TEM |<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>3.0<br>ID = 58A<br>VGS = 10V<br>2.5<br>2.0<br>/<br>PET ET ELT PAL<br>1.5 Y,<br>1.0 S ane 4eneeee<br>L E ELLE<br>Fagen<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>Fig 4.   Normalized On-Resistance vs. Temperature<br>12.0<br>ID= 58A<br>10.0 VDS= 80V<br>VDS= 50V<br>8.0 VDS= 20V LL|<br>6.0 Z Ye<br>f ae AA<br>4.0 P Y} ft | oy<br>2.00.0 J} | | fy.<br>0 20 40 60 80 100 120<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>a 7A A S|<br>100µsec<br>100 100 1 m sec<br>T = 175°C<br>J<br>10msec<br>TJ = 25°CJ = 25°C= 25°C<br>10 10 DC<br>p t tA EAMGa<br>Tc = 25°C<br>Tj = 175°C<br>VGS = 0VGS = 0V= 0V Single Pulse<br>a e TA T<br>1 1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 7.   Typical Source-Drain Diode Forward Voltage Fig 8.   Maximum Safe Operating Area<br>100 130<br>Limited By Package<br>125<br>75 ed yy d A LLELE<br>120<br>aw T TT he<br>50 115<br>a e e M nnEnD? <0<br>110<br>S aaNG T ir<br>25<br>105<br>0 FLEE [EN] \ 100 A BDZELELEELELARRRERRAE<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>ID,  Drain-to-Source Current (A)<br>ID,  Drain Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


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1000<br>a<br>100<br>T = 175°C<br>J<br>TJ = 25°CJ = 25°C= 25°C<br>10<br>p t tA<br>VGS = 0VGS = 0V= 0V<br>a e<br>1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 10.** Drain-to-Source Breakdown Voltage 

**Fig 9.** Maximum Drain Current vs. Case Temperature 

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2.0 900<br>ID<br>800<br>1.5 / 700 \ C LLLLLennen TOP         6.7A9.7A<br>BOTTOM 58A<br>600<br>500<br>1.0 P e] ETAL] CP ACCCCELL<br>400<br>300<br>0.5 | |LAT; | PA SSETONCE<br>200<br>100<br>0.0 p 2Znnae 0 C USSNCCoeARBSSS E<br>0 20 40 60 80 100 120 25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>VDS, Drain-to-Source Voltage (V)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 11.** Typical COSS Stored Energy 

**Fig 12.** Maximum Avalanche Energy vs. DrainCurrent 

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1<br>D = 0.50<br>0.1 0.20<br>0.10<br>0.05<br>0.01 m 0.020.01 e τJ τJ R1 R1 R2 R2 τCτ Ri (°C/W)   0.2736     0.000376 τi (sec) |<br>τ1 τ1 τ2τ2 0.3376     0.004143<br>0.001 i SINGLE PULSE( THERMAL RESPONSE ) Ci=  T Ciτi/Rii/Ri T — i<br>Notes:<br>1. Duty Factor D = t1/t2<br>0.0001 || TE EE ELE ELLE 2. Peak Tj = P dm x Zthjc + Tc |<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>100 p T pulsewidth, tav, assuming ∆Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>Duty Cycle = Single Pulse<br>a a ee ee ee ee ee ee ee ee<br>PTT 0.01 aE ee a ee ee ee<br>10 C OT 0.05 BSW SRO CUI FT<br>0.10<br>pot tt tPA SS<br>1 PET Allowed avalanche Current vs avalanche  AANITIT TeITPT<br>pulsewidth, tav, assuming ∆Τ j = 25°C and<br>Tstart = 150°C.<br>0.1 rh LE oLE LL<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14.   Typical Avalanche Current vs.Pulsewidth<br>250 Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>TTI TOP          Single Pulse                 | (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>200 ID = 58A Purely a thermal phenomenon and failure occurs at a temperature far in<br>N I | excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type.<br>2. Safe operation in Avalanche is allowed as long as neither Tjmaxjmax nor Iav<br> is exceeded.<br>150 B ND 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.<br>4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse.<br>C ONNELL<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase<br>100 P ENNE during avalanche).<br>6. Iav = Allowable avalanche current.<br>T oTNINLLL<br>7. ∆T = Allowable rise in junction temperature, not to exceed∆T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as<br>50 25°C in Figure 14, 15).<br>P EEPT NNT tav = Average time in avalanche.<br>C OLLEEN D = Duty cycle in avalanche =  tav ·f<br>PEEEEEEENNIN ZthJC(D, tav) = Transient thermal resistance, see Figures 13)<br>0<br>25 50 75 100 125 150 175 PD (ave) = 1/2 ( 1.3·BV·Iav) =D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) =av) =) = A T/ ZthJCthJC<br>Starting TJ , Junction Temperature (°C) Iav =av == 2 A T/ [1.3·BV·Zth]th]]<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as neither Tjmaxjmax nor Iav (max) is exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 

4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. ∆T = Allowable rise in junction temperature, not to exceed∆T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as 25°C in Figure 14, 15). 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) =av) =) =** A **T/ ZthJCthJC Iav =av == 2** A **T/ [1.3·BV·Zth]th]] EAS (AR) = PD (ave)·tav** 

**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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5.0<br>4.5<br>P RE<br>4.0<br>3.5 C RASS<br>3.0<br>ID = 150µA<br>HO SE<br>2.5 ID = 250µA<br>ID = 1.0mA<br>2.0 ae<br>ID = 1.0A HAS<br>1.5<br>PE ER<br>1.0 PE<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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20 PP Pt [EE] Ey<br>15<br>T ae<br>10<br>aan<br>5 e ry ii IF = 19A<br>a n<br>VR = 85V<br>TJ = 25°C   _____<br>anne<br>TJ = 125°C ----------<br>0 Py | tf |<br>100 200 300 400 500 600 700 800 900 1000<br>dif/dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Threshold Voltage vs. Temperature 

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20 E RR<br>15<br>p t ptt pep<br>Pf | Le<br>10<br>e t | eer |<br>P ier | | |<br>5 IF = 38A<br>e ct | |<br>TA VR = 85V<br>TJ = 25°C   _____<br>TJ = 125°C ----------<br>PE<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>dif/dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


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400<br>350<br>P t tt | | yt<br>300<br>S ERRE<br>250<br>E ERE<br>200<br>P t | tet | et<br>150<br>Pe tt |e<br>100 IF = 19A<br>a ed<br>L F + [|] VR = 85V<br>50 TJ = 25°C   _____<br>TJ = 125°C ----------<br>P it<br>0 | | |<br>100 200 300 400 500 600 700 800 900 1000<br>dif/dt (A/µs)<br>Qrr (nC)<br>**----- End of picture text -----**<br>


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400<br>350 E RR<br>300 P ieryy<br>250 p p<br>200<br>P f ee A<br>p e eT EY |<br>150<br>|<br>100 Y i IF = 38A<br>|<br>VR = 85V<br>50 o y TJ = 25°C   _____<br>TJ = 125°C ----------<br>P it<br>0 | |<br>100 200 300 400 500 600 700 800 900 1000<br>dif/dt (A/µs)<br>Qrr (nC)<br>**----- End of picture text -----**<br>


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**==> picture [415 x 664] intentionally omitted <==**

**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period —— + D = — Period<br>) [©)]    •  CircuitLow  LayoutS ConsiderationsInd | t V t GS=10<br> •<br>- •   CurrentLow LeakageTransformerInductance ®@ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt /<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 > VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dv/dt controlled by Rg Vpp -<br>•<br>D.U.T. - Device Under Test SCO |<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" @|\ t<br>* Vg = 5V for Logic Level Devices<br>Fig 20.  Peak Diode Recovery dv/dt Test Circuit for N-Channel<br>HEXFET ® Power MOSFETs<br>V(BR)DSS<br>15V << tp ><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>p 20VVGS AEae / \<br>tp 0.01Ω IAS<br> Unclamped Inductive Test Circuit Fig 21b.   Unclamped Inductive Waveforms<br>LDD<br>VDSDS VDS<br>90%<br>+<br>VDDDD -<br>D.U.T 10% x \<br>VGSGS VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1% td(on) tr td(off) tf<br>  Switching Time Test Circuit Fig 22b.   Switching Time Waveforms<br>Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>Vgs(th)<br>1K<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 21b.** Unclamped Inductive Waveforms 

**Fig 21a.** Unclamped Inductive Test Circuit 

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LDD<br>VDSDS<br>+<br>VDDDD -<br>D.U.T<br>VGSGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>Fig 22a.   Switching Time Test Circuit<br>L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br>


**Fig 22a.** Switching Time Test Circuit 

**Fig 23a.** Gate Charge Test Circuit 

**Fig 23b.** Gate Charge Waveform 

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TO-220AB packages are not recommended for Surface Mount Application. 

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## TO-262 Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

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TRR<br>O°<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>1.50 (.059)<br>3.90 (.153) 0.368 (.0145)<br>0.342 (.0135)<br>ZN<br>FEED DIRECTION 1.85 (.073) 1 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>te 16.10 (.634) | I 4.52 (.178)<br>15.90 (.626)<br>a oO%004 in<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941) TT<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| 9 |<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) IE 4<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 05/07 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

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---

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