# Power MOSFET, N Channel, 150 V, 83 A, 0.015 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:1436961/)

**URL**: https://novapart.co/products/IRFB4321PBF/power-mosfet-n-channel-150-v-83-a-0015-ohm-to
**SKU**: IRFB4321PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9570
**Stock**: 100+
**Lead Time**: 71 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:83A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Diss

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 330W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 83A |
| Drain Source On State Resistance | 0.015ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1436961/)

## IRFB4321PbF 

## **Applications** 

HEXFET ® Power MOSFET 

Motion Control Applications 

**VDSS 150V** ~~ee ee~~ **RDS(on)   typ. 12m max. 15m** ~~es~~ **ID 85A** 

High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply Hard Switched and High Frequency Circuits 

## **Benefits** 

> ° Low RDSON Reduces Losses Low Gate Charge Improves the Switching Performance 

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||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|D|D|
|Improved Diode Recovery Improves Switching &|
|EMI Performance|
|||30V Gate Voltage Rating Improves RobustnessFully Characterized Avalanche SOA|S|
|G|
|D|
|G|
|S|
|TO-220AB|
|G|D|S|
|Gate|Drain|Source|
|Absolute Maximum Ratings|
|a|Symbol|Parameter|Max.|Units|
|ID @ TC = 25°C|Continuous Drain Current, VGS @ 10V|85|A|
|es|nn|
|ID @ TC = 100°C|Continuous Drain Current, VGS @ 10V|60|
|esnS|
|IDM|Pulsed Drain Current|330|
|es|>|
|a|PD @TC = 25°C|(OO|Maximum Power Dissipation|350|W|
|a|(OO|Linear Derating Factor|2.3|W/°C|
|a|VGS|(OO|Gate-to-Source Voltage|±30|V|
|EAS (Thermally limited)|Single Pulse Avalanche Energy|120|mJ|
|TJ|Operating Junction and|-55  to + 175|°C|
|TSTG|Storage Temperature Range|
|Soldering Temperature, for 10 seconds|300|
|ee|(1.6mm from case|re|)|
|a|(OO|Mounting torque, 6-32 or M3 screw|10lb|in (1.1N|m)|
|Thermal Resistance|
|TT|Parameter|Typ.|Max.|Units|
|R|θ|JC|Junction-to-Case|–––|0.43|
|es|o>*>o=|Xv|
|es|R|θ|CS|nS|Case-to-Sink|©|, Flat, Greased Surface|0.50|–––|°C/W|
|ee|R|θ|JA|Junction-to-Ambient|©|I|–––|62|

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Improved Diode Recovery Improves Switching & EMI Performance 

www.irf.com 

1 

12/9/10 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>150<br>–––<br>–––<br>V<br>ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient<br>–––<br>150<br>–––<br>mV/°C<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>12<br>15<br>mΩ<br>VGS(th)<br>Gate Threshold Voltage<br>3.0<br>–––<br>5.0<br>V<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>μA<br>–––<br>–––<br>1.0<br>mA<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>RG(int)<br>Internal Gate  Resistance<br>–––<br>0.8<br>–––<br>Ω<br>VGS= 20V<br>VGS= -20V<br>VDS= VGS,ID= 250μA<br>VDS= 150V,VGS= 0V<br>VDS= 150V,VGS= 0V,TJ= 125°C<br>**Conditions**<br>VGS= 0V,ID= 250μA<br>Reference to 25°C,ID= 1mA<br>VGS= 10V,ID= 33A<br>~~a~~<br>~~Gs QO~~<br>~~GO~~<br>~~GD~~<br>~~QQ~~<br>~~a~~<br>~~GD ~~~~**Q**O QO~~<br>~~aG~~<br>~~QO~~<br>~~©~~<br>~~aGQ~~<br>~~eee~~<br>~~a~~<br>~~————————_—————E~~<br>~~QO~~<br>~~a~~<br>~~GQ QO~~|
|---|
|**Dynamic @ TJ = 25°C(unless otherwise specified)**|
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>gfs<br>Forward Transconductance<br>130<br>–––<br>–––<br>S<br>Qg<br>Total Gate Charge<br>–––<br>71<br>110<br>nC<br>**Conditions**<br>VDS= 25V,ID= 50A<br>ID= 50A<br>~~a~~<br>~~Gs QO~~<br>~~GO~~<br>~~a~~<br>~~Gs QO~~<br>~~GO~~<br>~~a es~~|
|Qgs<br>Gate-to-Source Charge<br>–––<br>24<br>–––<br>VDS= 75V<br>~~a ee~~|
|Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>21<br>–––<br>VGS= 10V<br>~~a~~<br>~~ee~~<br>~~@~~|
|td(on)<br>Turn-On DelayTime<br>–––<br>18<br>–––<br>ns<br>VDD= 98V<br>~~a ee~~|
|tr<br>Rise Time<br>–––<br>60<br>–––<br>ID= 50A<br>~~a ee~~|
|td(off)<br>Turn-Off DelayTime<br>–––<br>25<br>–––<br>RG= 2.5Ω<br>~~a ee~~|
|tf<br>Fall Time<br>–––<br>35<br>–––<br>VGS= 10V<br>~~a@~~|
|Ciss<br>Input Capacitance<br>–––<br>4460<br>–––<br>pF<br>VGS= 0V<br>~~a~~<br>~~ee~~|
|Coss<br>Output Capacitance<br>–––<br>390<br>–––<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>82<br>–––<br>VDS= 50V<br>ƒ= 1.0MHz<br>~~a~~<br>~~aee~~<br>~~es~~|
|**Diode Characteristics**|
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>~~a~~<br>~~QQ GQ~~|
|D<br>IS<br>Continuous Source Current<br>–––<br>–––<br>85<br>A<br>MOSFET symbol|
|(Body Diode)<br>showing  the|
|S<br>G<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>330<br>A<br>(Body Diode)<br>integral reverse<br>p-n junction diode.<br>~~ao~~|
|VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>trr<br>Reverse RecoveryTime<br>–––<br>89<br>130<br>ns<br>ID= 50A<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>300<br>450<br>nC<br>VR= 128V,<br>TJ= 25°C,IS= 50A,VGS= 0V<br>~~a~~<br>~~Gs QO~~<br>~~GO~~<br>~~aee~~<br>~~es~~<br>~~a Ge~~|
|IRRM<br>Reverse RecoveryCurrent<br>–––<br>6.5<br>–––<br>A<br>di/dt = 100A/μs<br>~~a®~~|
|ton<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~a~~|



Oo) Calculated continuous current based on maximum allowable junction ® Pulse width ≤ 400μs; duty cycle ≤ 2%. temperature. Package limitation current is 75A @® R θ is measured at T, approximately 2) Repetitive rating;  pulse width limited by max. junction temperature. 

Limited by TJmax, starting TJ = 25°C, L = 0.095mH 

RG = 25 Ω , IAS = 50A, VGS =10V. Part not recommended for use above this value. 

www.irf.com 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.5V<br>6.0V5.5V<br>100 5.5V<br>BOTTOM 5.0V<br>Ah<br>af 5.0V.0V0VV<br>10<br>≤  60μs PULSE WIDTH<br>Tj = 175°C<br>1 | eTT<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>3.5<br>ID = 50AD = 50A= 50A<br>3.0 V GS  = 10V<br>2.5 Fett Hy Hy<br>ToT<br>2.0<br>BERR RRRED Zan<br>/<br>1.5 LEE YELL<br>a<br>1.0<br>LAL<br>0.5 er ELE EL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>100 6.5V 6.5V<br>6.0V5.5V 100 6.0V5.5V<br>BOTTOM 5.0V BOTTOM 5.0V<br>Sse Ah<br>10<br>LC af 5.0V.0V0VV<br>10<br>1<br>≤  60μs PULSE WIDTH ≤  60μs PULSE WIDTH<br>5.0V Tj = 25°C Tj = 175°C<br>0.1 a | 1 | eTT<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 3.5<br>ID = 50AD = 50A= 50A<br>3.0 V GS  = 10V<br>100<br>p; ff pe 2.5 Fett Hy Hy<br>Sain TJ = 175°C ToT<br>10 2.0<br>py ff BERR RRRED Zan<br>es ee ae ee /<br>If FP TJ = 25°C yt | 1.5 LEE YELL<br>1<br>fp a<br>VDS = 25V 1.0<br>≤  60μs PULSE WIDTH<br>Pea LAL<br>0.1<br>wane 0.5 er ELE EL<br>3.0 4.0 5.0 6.0 7.0 8.0 9.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V)<br>TJ , Junction Temperature (°C)<br>Fig 4.   Normalized On-Resistance vs. Temperature<br>Fig 3.   Typical Transfer Characteristics<br>7000 20<br>VGS   = 0V,       f = 1 MHZ ID= 50A<br>60005000 ]ee CCCiss rss  oss    = C = C= Cgds gd s + C+ Cggdd,  Cds SHORTED 16 e| VVDS= 75VVDS= 30VDS a = 120V eft<br>Ciss<br>40003000 CCX Coss E HHTT 128 -—=| febyVa<br>2000<br>4<br>1000<br>NU r7| | [| ff<br>Crss<br>0 sitetUTE HT ma  ae 0 fi i i | |<br>1 10 100 0 20 40 60 80 100 120<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>100<br>> ae<br>TJ = 175°C<br>Lf |<br>10<br>_ e av eeue<br>TJ = 25°C<br>1<br>VGS = 0V<br>0.1 J fo<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, Source-to-Drain Voltage (V)<br>Fig 7.   Typical Source-Drain Diode<br>Forward Voltage<br>90<br>Po LIMITED BY PACKAGE<br>80<br>70 =<br>60<br>N ee<br>50<br>ee<br>40<br>PN<br>30<br>a<br>20<br>Ee<br>10<br>0 a<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>Fig 9.   Maximum Drain Current vs.<br>Case Temperature<br>5.0<br>4.0<br>3.0 TELL LL<br>2.0 LyTELIA<br>1.0<br>BapZanin<br>0.0 ati li it<br>0 20 40 60 80 100 120 140 160<br>VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A)<br>Energy (μJ)<br>ID , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 11.** Typical COSS Stored Energy 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS (on)<br>a<br>10 0 μsec<br>100<br>re te 1 m sec Te t<br>meee .MR SC<br>10<br>a at 10msec eieer!<br>aati ial<br>1<br>Tc = 25°C<br>Tj = 175°C DC<br>Single Pulse<br>ee<br>0.1<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>190<br>180 ToT<br>170 LLL eT<br>aya<br>160 ALLL<br>XY<br>150<br>Pitta<br>SLELEL EEL<br>140<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>Fig 10.   Drain-to-Source Breakdown Voltage<br>500<br>                 I D<br>TOP         13A<br>400                20A<br>BOTTOM   50A<br>300 Ne<br>200 NOGN<br>100<br>RANE<br>0 OSL<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>ID,  Drain-to-Source Current (A)<br>V(BR)DSS , Drain-to-Source Breakdown Voltage<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 10.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Maximum Avalanche Energy Vs. DrainCurrent 

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1 ae ee ee ee ee ee ee eee es De ee es Oe a ees Ge ee OOO<br>PEA EE EE EEE<br>D = 0.50 SEA EE<br>0.1 0.20 Fn a etterrr Tl<br>A errr | TE |<br>0.10 R1 R1 R2 R2 R3R3 Ri (°C/W) τι  (sec)<br>τ J τ J τ C τ 0.085239 0.000052<br>0.05 τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 0.18817 0.00098<br>0.02 Ci=  τ i / Ri<br>0.01 — — A e et Ci=  EL; τ i / Ri ot é a 0.176912 0.008365 |<br>0.01<br>— coer SINGLE PULSE | Tt eH AE EEEEET<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100 Se ee a a a a a ee ee ee ee ee  ee<br>Allowed avalanche Current vs avalanche<br>Duty Cycle = Single Pulse<br>ee SE LH pulsewidth, tav, assuming  Δ Tj = 150°C and  ii<br>Tstart =25°C (Single Pulse)<br>Pe 0.01 Ly<br>I K I<br>10 0.05<br>0.10<br>——'PE LIPSEe<br>77a EEE EP<br>1 LEA Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  ΔΤ j = 25°C and  Rn, eeTT ETH<br>Tstart = 150°C. eeeee een<br>PFEIFER EET EEE<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Thermal Response ( Z thJC )<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 14.** Typical Avalanche Current vs.Pulsewidth 

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120<br>TOP          Single Pulse<br>100 NOL BOTTOM   1% Duty Cycle I D  = 50A<br>Ni KI<br>80<br>Nooo<br>60 PENN LEELELE<br>TTI NN L EE<br>40<br>\N.<br>20<br>COTES<br>0 ST [ELELEENX]<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com)** 

1. Avalanche failures assumption: 

- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. Δ T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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6.0 40<br>ID = 1.0A<br>ID = 1.0mA<br>5.0 TOT I D  = 250μA 30 TT) LE E<br>4.0 Seeeeeat nn<br>PSS 20 [LAT<br>3.0<br>CRS PTE<br>IF = 33A<br>10<br>2.0 SUSREREA NS |“a | VR = 128V LL<br>TJ = 125°C<br>TJ =  25°C<br>1.0 ATT 0 A<br>-75 -50 -25 0 25 50 75 100 125 150 175 100 200 300 400 500 600 700 800 = 900 1000<br>TJ , Temperature ( °C ) dif / dt - (A / μs)<br>Fig. 17 - Typical Recovery Current vs. di;/dt<br>Fig 16.   Threshold Voltage Vs. Temperature<br>40 3200<br>2800<br>30 ly) bebe 2400 Pt tt Ty yy es<br>Eeeee CCC ar<br>2000<br>20 1600<br>“/ BERRY Zee<br>PTT) «= ER<br>1200<br>10 IF = 50A 800 IF = 33A<br>y VR = 128V So 8lneen VR = 128V<br>PZANNSEAE TJ = 125°C  R n 400 poe ceuee T J  = 125°C<br>TJ =  25°C TJ =  25°C<br>0 rT 0 P=<br>PL i | | |<br>100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / μs) dif / dt - (A / μs)<br>VGS(th), Gate threshold Voltage (V)<br>IRRM - (A) QRR - (nC)<br>IRRM - (A)<br>**----- End of picture text -----**<br>


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3200<br>2800 Pitt<br>2400<br>Pet yy tt<br>2000<br>pt]fet}tt dere<br>1600 | LdPert| Td|<br>1200<br>EceZannen<br>IF = 50A<br>800<br>LC VR = 128V<br>400 T J  = 125°C<br>TJ =  25°C<br>0 ait [|] | [|] 4 |<br>PL [il]  ry<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / μs)<br>QRR - (nC)<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>D.U.T + [{ P.W. n d — Period<br>) [©)]    •  Circuit Layout Considerations lt V | GS=10V<br> •<br>| —| - LowGround Stray Pla I n eductance<br> •   Low Leakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oH - [1] Current Transformer - ® + Current r Current di/dt NN<br>1) D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 = VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( aA •   dv/dt controlled by Rg Vpp -<br>•<br>D.U.T. - Device Under Test er ae<br>Isp controlled by Duty Factor "D" @ t Ripple  ≤ 5% ISD<br>* Veg = 5V for Logic Level Devices<br>Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel<br>HEXFET ® Power MOSFETs<br>V(BR)DSS<br>15V < tp ><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>20VVGS<br>tp 0.01 Ω IAS<br>**----- End of picture text -----**<br>


**Fig 22a.** Unclamped Inductive Test Circuit 

**Fig 22b.** Unclamped Inductive Waveforms 

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LD<br>VDS<br>+<br>VDD -<br>D.U.T<br>VGS<br>Pulse Width < 1μs<br>Duty Factor < 0.1%<br>Fig 23a.   Switching Time Test Circuit<br>L<br>VCC<br>DUT<br>0<br>1K<br>ee:<br>**----- End of picture text -----**<br>


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V<br>DS<br>90%<br>10%<br>V<br>GS<br>*| . i<br>td(on) tr td(off) tf<br>Fig 23b.   Switching Time Waveforms<br>Id<br>Vds<br>Vgs<br>Vgs(th)<br>.<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 24b.** Gate Charge Waveform 

**Fig 24a.** Gate Charge Test Circuit 

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER<br>IN THE ASSEMBLY LINE "C" LOGO | TEARIRFI0100190 we<br>DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/10 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFB4321PBF/power-mosfet-n-channel-150-v-83-a-0015-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfb4321pbf/mosfet-n-150v-to-220ab/dp/1436961)
---

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