# Power MOSFET, N Channel, 200 V, 42.6 A, 0.055 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8657971/)

**URL**: https://novapart.co/products/IRFB42N20DPBF/power-mosfet-n-channel-200-v-426-a-0055-ohm-to
**SKU**: IRFB42N20DPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.2100
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:42.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; P

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 42.6A |
| Drain Source On State Resistance | 0.055ohm |
| Gate Source Threshold Voltage Max | 5.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8657971/)

PD- 95470 

## **SMPS MOSFET** 

## IRFB42N20DPbF 

## HEXFET Power MOSFET 

## **Applications** 

High frequency DC-DC converters Motor Control Uninterrutible Power Supplies Lead-Free 

|**VDSS**|**RDS(on)max**|**ID**|
|---|---|---|
|**200V**|**0.055**Ω|**44A**|



## **Benefits** 

Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

Fully Characterized Avalanche Voltage and Current 

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**----- Start of picture text -----**<br>
TO-220AB<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|(ooo|**Parameter**<br>(ooo|**Max.**<br>(ooo|**Units**<br>(ooo|
|---|---|---|---|
|ID@ TC= 25°C<br>~~a~~<br><br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~ee~~|44<br>~~ee~~|A<br>~~ee~~|
|ID@ TC= 100°C<br>~~—~~<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~ee~~|31<br>~~ee~~||
|IDM<br><br>~~a~~|Pulsed Drain Current<br>~~ee~~|180<br>~~ee~~||
|PD@TA= 25°C<br>~~ee~~<br>~~ee~~|Power Dissipation<br>~~ee~~<br>~~ee~~|2.4<br>~~ee~~|W<br>~~ee~~<br>~~}—~~|
|PD@TC= 25°C<br>~~ee~~|Power Dissipation<br>~~ee~~|330<br>~~ee~~<br>~~}—~~||
|~~ff}~~|Linear DeratingFactor<br>~~ff}~~|2.2<br>~~ff}~~<br>~~}—~~|W/°C<br>~~ff}~~<br>~~}—~~|
|VGS<br>~~ff}~~<br>~~OOO~~|Gate-to-Source Voltage<br>~~ff}~~<br>~~OOO~~|± 30<br>~~ff}~~<br>~~}—~~<br>~~OOO~~|V<br>~~ff}~~<br>~~}—~~<br>~~OOO~~|
|dv/dt<br>~~OOO~~<br>~~ee~~|Peak Diode Recoverydv/dt<br>~~OOO~~<br>~~es~~|2.5<br>~~}—~~<br>~~OOO~~<br>~~ae~~|V/ns<br>~~}—~~<br>~~OOO~~|
|TJ<br>~~ee~~<br>~~ee~~|Operating Junction and<br>~~ee~~<br>~~es~~|-55  to + 175<br>~~ee~~<br>~~ae~~|°C|
|TSTG<br>~~ee~~<br>~~ee~~|Storage Temperature Range<br>~~ee~~<br>~~es~~|||
|~~ee~~|Soldering Temperature, for 10 seconds<br>~~es~~|300 (1.6mm from case )<br>~~ae~~||
|~~ee~~<br>~~ss~~|Mounting  torqe,  6-32  or M3  screw                                       10 lbf•in (1.1N•m)<br>~~es~~<br>~~ss~~|Mounting  torqe,  6-32  or M3  screw                                       10 lbf•in (1.1N•m)<br>~~ae~~<br>~~ss~~|~~ss~~|



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.45|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



Notes through are  on page 8 

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## IRFB42N20DPbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

|es|**Parameter**<br>es|**Min. **<br>es<br>~~ee~~<br>~~es~~|**Typ. **<br>es<br>~~ee~~<br>~~ee~~|**Max.**<br>es<br>~~ee~~|**Units**<br>es|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~es~~|200<br>~~ee ~~<br>~~es~~<br>~~es~~|–––<br> ~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ<br>~~es~~<br>~~es~~|JBreakdown Voltage Temp. Coefficient –––    0.26   –––     V/°C    Reference to 25°C, I<br>~~es~~<br>~~es~~|–––    0.26   –––     V/°C    Reference to 25°C, I<br>~~es ~~<br>~~es~~<br>~~es~~|–––    0.26   –––     V/°C    Reference to 25°C, I<br> ~~ee~~<br>~~es~~<br>~~ee~~|–––    0.26   –––     V/°C    Reference to 25°C, I<br>~~es~~|–––    0.26   –––     V/°C    Reference to 25°C, I<br>~~es~~|–––    0.26   –––     V/°C    Reference to 25°C, ID= 1mA<br>~~@~~|
|RDS(on)<br>~~es~~<br>~~a~~|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~a~~|–––<br>~~es~~<br>|––– <br>~~ee~~<br>|0.055<br>|Ω<br>|VGS= 10V, ID= 26A<br>~~@~~|
|VGS(th)<br>~~es~~<br>~~aee~~|Gate Threshold Voltage<br>~~es ~~<br>~~aee~~|3.0<br> ~~es ~~<br>~~eee~~|–––<br> ~~ee~~<br>~~eee~~|5.5<br>~~eee~~|V<br>~~eee~~|VDS= VGS, ID= 250µA<br>~~@~~|
|IDSS<br>~~aee~~|Drain-to-Source Leakage Current<br>~~aee~~<br>~~**|**~~|–––<br>~~eee~~<br>~~**|**~~|–––<br>~~eee~~|25<br>~~eee~~|µA<br>~~eee~~|VDS= 200V, VGS= 0V|
|||–––<br>~~eee~~<br>~~**|**~~<br>ee|–––<br>~~eee~~|250<br>~~eee~~||VDS= 160V, VGS= 0V, TJ= 150°C|
|IGSS<br>~~ee~~<br>~~es~~|Gate-to-Source Forward Leakage<br>~~ee ~~<br>~~**|**~~<br>~~es~~|–––<br> ~~eee~~<br>~~**|**~~<br>~~es~~<br>ee|–––<br>~~eee~~<br>~~es~~|100<br>~~eee~~<br>~~es~~|nA<br>~~eee~~|VGS= 30V|
||Gate-to-Source Reverse Leakage<br>~~es~~|–––<br>~~es~~<br>ee|–––<br>~~es~~|-100<br>~~es~~||VGS= -30V|



## **Dynamic @ TJ = 25°C (unless otherwise specified)** 

||||~~ee~~|~~ee~~|||||||
|---|---|---|---|---|---|---|---|---|---|---|
||**Parameter**<br>ee||**Min. **<br>ee<br>~~ee~~|**Typ. **<br>ee<br>~~ee~~|**Max.**<br>ee||**Units**<br>ee|**Conditions**|||
|gfs|Forward Transconductance<br>~~es~~||21<br>~~ee ~~<br>~~es~~|–––<br> ~~ee~~<br>~~es~~|–––<br>~~es~~||S<br>~~es~~|VDS= 50V, ID= 26A|||
|Qg|Total Gate Charge<br>~~a~~||–––<br>~~a~~<br>es|91      140                I<br>~~a~~|91      140                I<br>~~a~~||91      140                I<br>nC|91      140                ID= 26A<br>VDS= 160V<br>VGS= 10V,|||
|Qgs|Gate-to-Source Charge<br>~~ee~~||–––<br>~~ee~~<br>es<br>~~es~~|24<br>~~ee~~|36<br>~~ee~~||||||
|Qgd<br>~~a~~|Gate-to-Drain("Miller")Charge<br>~~ee~~||–––<br>es<br>~~ee~~<br>~~es~~<br>es|43<br>~~ee~~<br>ee|65<br>~~ee~~||||||
|td(on)<br>~~a~~|Turn-On Delay Time<br>~~ee~~||–––<br>~~es~~<br>~~ee~~<br>es|18<br>~~ee~~<br>ee|–––<br>~~ee~~||ns<br>~~|~~|VDD= 100V<br>ID= 26A<br>RG= 1.8Ω<br>VGS= 10V<br>~~|®~~|||
|tr<br>~~a~~|Rise Time||–––<br>es<br>ee|69<br>ee|–––||||||
|td(off)<br>a|Turn-Off Delay Time<br>~~ee~~||–––<br>~~ee~~<br>ee|29<br>~~ee~~|–––<br>~~ee~~||||||
|tf<br>~~|~~|Fall Time<br>~~|~~||–––<br>ee<br>~~|~~|32<br>~~|~~|–––<br>~~|~~||||||
|Ciss<br>~~|~~|Input Capacitance<br>~~|~~||–––<br>~~|~~|3430<br>~~|~~|–––<br>~~|~~||pF<br>~~|~~<br>~~a~~|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz<br>~~|~~<br>~~a~~|||
|Coss<br>~~a~~|Output Capacitance<br>~~a~~<br>~~es~~||–––<br>~~a~~<br>~~es~~|530<br>~~a~~<br>~~es~~|–––<br>~~a~~<br>~~es~~||||||
|Crss<br>a~~es~~|Reverse Transfer Capacitance<br>~~es~~||–––<br>~~es~~|100<br>~~es~~|–––<br>~~es~~||||||
|Coss<br>a~~es~~<br>a<br>Rs|Output Capacitance<br>~~es~~||–––<br>~~es~~|5310<br>~~es~~|–––<br>~~es~~|||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz|||
|Coss<br>a<br>Rs<br>a|Output Capacitance<br>esee||–––<br>ee|210|–––|||VGS= 0V,  VDS= 160V,  ƒ = 1.0MHz<br>®|||
|Cosseff.<br>Rs<br>a|Effective Output Capacitance<br>esee||–––<br>ee|400|–––|||VGS= 0V, VDS= 0V to 160V<br>®|||
|**Avalanche Characteristics**<br>a<br>esee<br>®<br>eees|||||||||||
|ee<br>es||**Parameter**<br>es<br>ee<br>>||||**Typ.**<br>es|||**Max.**<br>es|**Units**<br>es|
|EAS<br>ee<br>es<br>S**e**||Single Pulse Avalanche Energy<br>es<br>ee<br>>||||–––<br>es|||510<br>es|mJ<br>es|
|IAR<br>es<br>S**e**<br>e||Avalanche Current<br>ee<br>><br>©||||–––|||26|A|
|EAR<br>S**e**<br>e||Repetitive Avalanche Energy<br>©||||–––|||33|mJ|



## **Avalanche Characteristics** 

|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>EAS<br>Single Pulse Avalanche Energy<br>–––<br>510<br>mJ<br>IAR<br>Avalanche Current<br>–––<br>26<br>A<br>EAR<br>Repetitive Avalanche Energy<br>–––<br>33<br>mJ<br>eees<br>esee<br>><br>S**e**<br>e<br>©|
|---|



## **Diode Characteristics** 

|~~ne~~<br>~~Se~~|**Parameter**<br>~~ee ee~~<br>~~Seay~~|**Min.**<br>~~ee~~<br>~~Seay~~|**Typ. **<br>~~ee~~<br>~~Seay~~|**Max.**<br>~~ee~~<br>~~Seay~~|**Units**<br>~~ee~~<br>~~Seay~~|**Conditions**<br>~~(a~~|
|---|---|---|---|---|---|---|
|IS<br>~~ne~~<br>~~Se~~|Continuous Source Current<br>(Body Diode)<br>~~ee ee~~<br>~~Seay~~|–––<br>~~ee~~<br>~~Seay~~|–––<br>~~ee~~<br>~~Seay~~|44<br>~~ee~~<br>~~Seay~~|~~ee~~<br>~~Seay~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>~~(a~~|
|ISM<br>~~ne~~<br>~~Se~~|Pulsed Source Current<br>(BodyDiode)<br>~~ee ee~~<br>~~Seay~~|–––<br>~~ee~~<br>~~Seay~~|–––<br>~~ee~~<br>~~Seay~~|180<br>~~ee~~<br>~~Seay~~|||
|VSD<br>~~Se~~|Diode Forward Voltage<br>~~Seay~~|–––<br>~~Seay~~|–––<br>~~Seay~~|1.3<br>~~Seay~~|V<br>~~Seay~~|TJ= 25°C, IS= 26A, VGS= 0V<br>~~(a~~<br>@|
|trr<br>~~Se~~<br>~~Ne~~|Reverse Recovery Time<br>~~Seay~~<br>~~es~~|–––<br>~~Seay~~<br>~~es~~|220<br>~~Seay~~<br>~~es~~|330<br>~~Seay~~<br>~~es~~|ns<br>~~Seay~~<br>~~es~~|TJ= 25°C, IF= 26A<br>di/dt = 100A/µs<br>~~(a~~<br>~~°~~|
|Qrr<br>~~Se~~<br>~~Ne~~|Reverse RecoveryCharge<br>~~Seay~~<br>~~es~~|–––<br>~~Seay~~<br>~~es~~|1860 <br>~~Seay~~<br>~~es~~|2790<br>~~Seay~~<br>~~es~~|nC<br>~~Seay~~<br>~~es~~||
|ton<br>~~Ne~~|Forward Turn-On Time<br>~~es~~<br>~~PT~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~es~~<br>~~°~~<br>~~PT~~|||||



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## IRFB42N20DPbF 

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**----- Start of picture text -----**<br>
 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br> 100 7.0V6.5V =<br>6.0V<br>5.5V<br>BOTTOM 5.0V ee<br> 10<br> 1<br>240<br>PT A TT<br>0.1 an ee) 5.0V eel<br>20µs PULSE WIDTH<br>See tr T  = 25J °C<br>0.01<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.5V a ee ee<br>6.0V<br>BOTTOM 5.5V5.0V Ho<br> 100<br>HT CTH<br> 10<br>—S SS, a<br>ae(a 5.0V<br>20µs PULSE WIDTH<br> 1 AC T  = 175J °C<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


## **Fig 1.** Typical Output Characteristics 

## **Fig 2.** Typical Output Characteristics 

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3.5<br>ID = 44A<br>o oo<br>3.0 Cee<br>2.5<br>FEREFEFE EAA<br>2.0 PT T_T eEL_ET_ ELEJ LI<br>1.5<br>|<br>ERE CEE<br>1.0<br>2<br>| | Pet | | tT Tt tt<br>0.5 Ler {| | | dtd Td| wT dt Ct<br>0.0 Ft;Pt tTtte_ tTtT etttT dT rEft TT VGS TT = 10V<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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 1000 SSS<br>HAE<br> 100 T  = 175  CJ °<br>.__ SaaS<br>nn SSA<br> 10<br>Ave) |<br> 1 P p T  = 25  CJ ° Ar<br>= SS SS SS = = ==<br>e e<br>V      = 50VDS<br>0.1 YPTT| { | { P | | 20µs PULSE WIDTH T<br>5 6 7 8 9 10 11<br>V     , Gate-to-Source Voltage (V)GS<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRFB42N20DPbF 

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**----- Start of picture text -----**<br>
100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = Cgs + Cgd,   Cds    SHORTED<br>FH Crss    = Cgd<br>C  = C + C<br>10000 oss   ds  gd<br>=e Ciss<br>Coss<br>1000<br>S SN Crss IEE<br>es | |<br>100 I N<br>10 PUEEWEPLEEI<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


## **Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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**----- Start of picture text -----**<br>
 1000<br> 100<br>T  = 175  CJ °<br> 10 AEHlliq7tSe AEyi ||<br>+ 47+ A 1<br> 1 fo seeeeeeeee T  = 25  CJ °<br>V      = 0 V GS<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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**----- Start of picture text -----**<br>
20<br>ID = 26A<br>VDS = 160V<br>VDS = 100V<br>16 PELL TT VDS = 40V Sana<br>10/,<br>12 CTT TA<br>8 || |[Ptyi tl fl<br>PPP<br>4<br>FOR TEST CIRCUIT<br>| 0 PARR EEGE SEE FIGURE       13<br>0 20 40 60 80 100 120 140<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>100µsec<br>10 P EEPS ER<br>S B E ll<br>1msec<br>ed<br>1 A R T |<br>Tc = 25°C 10msec<br>Tj = 175°C<br>Single Pulse<br>0.1<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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## IRFB42N20DPbF 

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**----- Start of picture text -----**<br>
50 Pi Rp<br>PN TE ELT EEE Ty Vos<br>40 nwEEE| EE EE v<br>PLT NEEL EEE Re g s D.UT. -<br>PENCE | ™<br>30 TTC NOCT Hey ≤ 1<br>≤ 0.1 %<br>20 PTTERRET EE INLINEIN : | Fig 10a.   Switching Time Test Circuit PulseDan FasWidth ys as<br>10 PT TET EET [ELLA] NG VDS<br>FEEEELELELEN 90%<br>0 |<br>25 50 75 100 125 150 175 |<br>T   , Case TemperatureC (  C)° |<br>10%<br>VGS | |<br>FL Ei  LL EL tt  ti AY.\« p< >! le ><br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 1 pt—“‘“‘LLSOCOUCTTCUTCh===a a ==...UT hc hddeeTree eee ee ee- +.eee —_—__.aneTT<br>nP D = 0.50 T ere<br>0.1 eee 0.20 [ee] ee — ee ee<br>SS A 0.10 a a a a= eeayee eee<br>0.05 eee<br>0.02 = SINGLE PULSE MR ee eeee<br>0.01 (THERMAL RESPONSE) PDM<br>0.01 e aTe OEeel<br>t1<br>PCTCT t2<br>a<br>Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRFB42N20DPbF 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>ai 20VVGS t<br>tp 0.01Ω<br>aban<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

**==> picture [121 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
_ tp V(BR)DSS<br>/ al<br>|<br>IAS 7<br>**----- End of picture text -----**<br>


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1000<br>ID<br>NEG TOP 11A<br>19A<br>KU Eee<br>800 PN BOTTOM 26A<br>600<br>SENS EERE<br>400 RANEONRNER ERE<br>| NE EERE<br>INANE<br>200 SERaNN NSE<br>SENN<br>Pitt TSS<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>QG<br>50KΩ<br>12V .2µF<br>.3µF<br>QGS QGD +<br>D.U.T. -VDS<br>VG VGS<br>oo, 6<br>3mA<br>ot<br>Charge CurrentIGSampling ResistorsID<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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## IRFB42N20DPbF 

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**----- Start of picture text -----**<br>
D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ) Current ==<br>Ty) di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent<br>S$<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® Power MOSFETs 

www.irf.com 

7 

## IRFB42N20DPbF 

**==> picture [308 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>| ZY CL a 1.22 (.048)<br>6.47 (.255)<br>4 6.10 (.240)<br>oes<br>15.24 (.600)<br>14.84 (.584) LEAD ASSIGNMENTS<br>1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE  IGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>3- SOURCE       4 - DRAIN 3- EMITTER<br>| larrt 4- DRAIN 4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>3X AP [1.40 (.055)] 1.15 (.045) 0.36  (.014)        M    B   A   M 2.92 (.115)<br>2.64 (.104)<br>a 2.54 (.100) | T<br>2X<br>NOTES:<br>     1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.<br>**----- End of picture text -----**<br>


- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

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E XAMPLE: T HIS  IS  AN IRF1010<br>LOT CODE 1789<br>AS S EMBLE D ON WW 19, 1997 INT E RNAT IONAL PART  NUMBER<br>IN T HE AS S E MBLY LINE "C" RECTIFIER<br>LOGO<br>Note: position indicates "Lead-Free"  "P" in assembly line DAT E CODE<br>AS S E MBLY YEAR 7 =  1997<br>LOT  CODE WEE K 19<br>LINE  C<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by 

® Repetitive rating;  pulse width limited by 6) ISD ≤ 26A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, max. junction temperature. TJ ≤ 175°C @® Starting TJ = 25°C, L = 1.45mH Pulse width ≤ 400µs; duty cycle ≤ 2%. RG = 25Ω, IAS = 26A, VGS=10V ® Cossoss eff. is a fixed capacitance that gives the same charging time 

® Cossoss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 7/04 

www.irf.com 

8 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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- [Supplier page](https://es.farnell.com/infineon/irfb42n20dpbf/mosfet-n-200v-42-6a-to-220/dp/8657971)
---

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