# Power MOSFET, N Channel, 200 V, 65 A, 0.024 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:1298536/)

**URL**: https://novapart.co/products/IRFB4227PBF/power-mosfet-n-channel-200-v-65-a-0024-ohm-to
**SKU**: IRFB4227PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5890
**Stock**: 1000+
**Lead Time**: 134 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0197ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissi

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Power Dissipation | 330W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 65A |
| Drain Source On State Resistance | 0.024ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1298536/)

## IRFB4227PbF 

## **Features** 

**Features** Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications Low QG for Fast Response | High Repetitive Peak Current Capability for Reliable Operation 

> e Short Fall & Rise Times for Fast Switching 175°C Operating Junction Temperature for Improved Ruggedness 

Repetitive Avalanche Capability for Robustness and Reliability 

Class-D Audio Amplifier 300W-500W 

(Half-bridge) 

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Key Parameters<br>VDS max 200 V<br>VDS (Avalanche) typ. 240 V<br>RDS(ON) typ. @ 10V 19.7 m<br>IRP max @ TC= 100°C 130 A<br>TJ max 175 °C<br>==s<br>D<br>D<br>=<br>G<br>S<br>D<br>G<br>S<br>TO-220AB<br>G D S<br>Gate Drain Source<br>**----- End of picture text -----**<br>


## **Description** 

HEXFET[®] Power MOSFET 

OSFET 

MOSFET 

MOSFET 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VGS|Gate-to-Source Voltage|±30|V|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V|65|A|
|ID@ TC= 100°C<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~a~~|46||
|IDM<br>~~a~~<br>~~a~~|Pulsed Drain Current<br>~~a~~<br>~~a~~|260||
|IRP@ TC= 100°C<br>~~a~~<br>~~a~~|Repetitive Peak Current<br>~~a~~<br>~~a~~|130||
|PD@TC= 25°C<br>~~a~~|Power Dissipation<br>~~a~~|330|W|
|PD@TC= 100°C|Power Dissipation|190||
||Linear DeratingFactor|2.2|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-40  to + 175|°C|
||SolderingTemperature for 10 seconds|300||
||MountingTorque, 6-32 or M3 Screw|10lb in(1.1N m)|N|



> Notes ® hrough © are on page 8 

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**Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~eG~~|**Typ.**<br>~~eG~~|**Max. **<br>~~eG~~|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~es~~|200<br>~~es~~<br>~~eG~~<br>~~rs~~|–––<br>~~es~~<br>~~eG~~<br>~~Gd~~|–––<br>~~es~~<br>~~eG~~<br>~~Gd~~|V<br>~~es~~<br>~~Gd~~|VGS= 0V, ID= 250µA<br>~~es~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~eG~~<br>~~es~~<br>~~rs~~|170<br>~~es~~<br>~~eG~~<br>~~es~~<br>~~Gd~~|–––<br>~~es~~<br>~~eG~~<br>~~es~~<br>~~Gd~~|mV/°C<br>~~es~~<br>~~es~~<br>~~Gd~~|Reference to 25°C, ID= 1mA<br>~~es~~<br>~~es~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~**e**~~|–––<br>~~es~~<br>~~rs ~~<br>~~**e**~~|19.7<br>~~es~~<br> ~~Gd~~<br>~~**e**e~~|24<br>~~es~~<br>~~Gd~~<br>~~e~~|mΩ<br>~~es~~<br>~~Gd~~<br>~~e~~|VGS= 10V, ID= 46A<br>~~es~~<br>~~e~~|
|VGS(th)|Gate Threshold Voltage<br>~~**e**~~|3.0<br>~~**e**~~<br>~~es~~|–––<br>~~**e**e~~<br>~~ee~~|5.0<br>~~e~~<br>~~ee~~|V<br>~~e~~|VDS= VGS, ID= 250µA<br>~~e~~<br>~~ee~~|
|∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~**e**~~<br>~~s~~|–––<br>~~**e**~~<br>~~s~~<br>~~es~~|-13<br>~~**e**e~~<br>~~s~~<br>~~ee~~<br>~~ee~~|–––<br>~~e~~<br>~~s~~<br>~~ee~~<br>~~ee~~|mV/°C<br>~~e~~<br>~~s~~<br>~~ee~~||
|IDSS|Drain-to-Source Leakage Current<br>~~**e**~~<br>~~s~~<br>~~eR~~|–––<br>~~**e**~~<br>~~s~~<br>~~es ~~<br>~~eR~~|–––<br>~~**e**e~~<br>~~s~~<br> ~~ee ~~<br>~~ee~~<br>~~eR~~|20<br>~~e~~<br>~~s~~<br> ~~ee~~<br>~~ee~~|µA<br>~~e~~<br>~~s~~<br>~~ee~~|VDS= 200V, VGS= 0V<br>~~e~~<br>~~ee~~|
|||–––<br>~~eR~~|–––<br>~~ee ~~<br>~~eR~~|1.0<br> ~~ee ~~|mA<br> ~~ee~~|VDS= 200V, VGS= 0V, TJ= 125°C<br>~~ee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|100<br>~~a~~|nA<br>~~a~~|VGS= 20V<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br>~~a~~<br>~~PT~~<br>~~rn~~|–––<br>~~a~~<br>~~PT~~|-100<br>~~a~~<br>~~PT~~||VGS= -20V<br>~~a~~|
|gfs|Forward Transconductance<br>~~rs~~<br>~~SS~~|49<br>~~rs~~<br>~~rn~~<br>~~SS~~|–––<br>~~rs~~|–––<br>~~rs~~|S<br>~~rs~~|VDS= 25V, ID= 46A<br>~~rs~~<br>~~ee~~|
|Qg|Total Gate Charge<br>~~SS~~|–––<br>~~rn~~<br>~~SS~~<br>~~ee~~|70|98|nC|VDD= 100V, ID= 46A, VGS= 10V<br>~~ee~~|
|Qgd|Gate-to-Drain Charge<br>~~SS~~<br>~~ee~~|–––<br>~~SS~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|23<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|td(on)|Turn-On DelayTime<br>~~SS~~<br>~~ee~~|–––<br>~~SS~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|33<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 100V<br>ID= 46A<br>RG= 2.5Ω<br>VGS= 10V<br>~~ee~~<br>~~9~~|
|tr|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|20<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~**ee**~~|21<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~**ee**~~<br>~~nn~~|31<br>~~ee~~<br>~~ee~~<br>~~nn~~|–––<br>|||
|tst|Shoot Through BlockingTime<br>~~ee~~<br>~~rs~~|100<br>~~**ee** ~~<br>~~rs~~<br>~~nn~~|–––<br> ~~ee~~<br>~~ee~~<br>~~rs~~<br>~~nn~~|–––<br>~~rs~~<br>|ns<br>~~rs~~|VDD= 160V, VGS= 15V, RG= 4.7Ω<br>~~9~~<br>~~rs~~|
|EPULSE|Energy per Pulse|–––<br>~~nn~~|570<br>~~nnef~~|–––<br>~~ef~~|µJ|L = 220nH, C= 0.4µF,  VGS= 15V<br>VDS= 160V, RG= 4.7Ω,TJ= 25°C|
|||–––<br>~~ee~~|910<br>~~a~~|–––<br>~~a~~||L = 220nH, C= 0.4µF,  VGS= 15V<br>VDS= 160V, RG= 4.7Ω,TJ= 100°C|
|Ciss|Input Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|4600<br>~~a~~<br>~~ee~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~|pF|ƒ= 1.0MHz,<br>VGS= 0V<br>VDS= 25V<br>||
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|460<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Crss<br>~~Po~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~Po~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|91<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Cosseff.<br>~~Po~~|Effective Output Capacitance<br>~~ee~~<br>~~Po~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~|360<br> ~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~||VGS= 0V, VDS= 0V to 160V<br>||
|LD<br>~~Po~~|Internal Drain Inductance<br>~~Po~~|–––<br>~~ee~~|4.5<br>~~ee~~|–––|nH|S<br>D<br>G<br>Between  lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>||
|LS<br>~~Po~~|Internal Source Inductance<br>~~Po~~<br>~~eo~~|–––<br>~~ee ~~<br>~~eo~~|7.5<br> ~~ee~~<br>~~eo~~|–––<br>~~eo~~|||



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VGS<br>TOP           15V<br>10V<br>8.0V<br>BOTTOM 7.0V Li alll<br>100<br>7.0V<br>— iW4 HH<br>10 APE ≤ 60µs PULSE WIDTH<br>Tj = 25°C<br>Pail<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000.0<br>VDS = 25V<br>≤ 60µs PULSE WIDTH<br>100.0 =<br>TJ = 175°C<br>10.0<br>1.0 TJ = 25°C<br>—— a —<br>0.1<br>ey Ae 9 ee<br>3.0 4.0 5.0 6.0 7.0 8.0<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics<br>1000<br>L = 220nH<br>900 C = 0.4µF<br>       100°C<br>800        25°C PF | |A.<br>700<br>600 Ff | YE |<br>500<br>a<br>400 eee<br>300 et<br>200100 Ff | | | ft |<br>110 120 130 140 150 160 170<br>VDS, Drain-to -Source Voltage  (V)<br>ID, Drain-to-Source Current (A)<br>Energy per pulse (µJ)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 5.** Typical EPULSE vs. Drain-to-Source  Voltage 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>BOTTOM 7.0V 00<br>100<br>7.0V<br>10<br>anit) aaa<br>PT AI ≤ 60µs PULSE WIDTH A<br>Tj = 175°C<br>1 TT ul<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>4.0<br>ID = 46A<br>VGS = 10V<br>3.0 TT,<br>2.0<br>1.0<br>nae<br>0.0 FEL EL EL ELE LL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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1000<br>L = 220nH<br>C = Variable<br>       100°C<br>800<br>   25°C<br>600<br>ya -<br>| | ee<br>400<br>—><br>200 =a<br>0<br>130 140 150 160 170 180 190<br>ID, Peak Drain Current  (A)<br>Energy per pulse (µJ)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical EPULSE vs. Drain Current 

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1400<br>L = 220nH<br>1200 | |g<br>C= 0.4µF<br>1000 C= 0.3µF<br>C= 0.2µF<br>800<br>600 as<br>400<br>200 a<br>0 Ft ft | fy<br>25 50 75 100 125 150<br>Temperature (°C)<br>Energy per pulse (µJ)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical EPULSE vs.Temperature 

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8000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>C  = C<br>rss   gd<br>6000 C oss   = C ds  + C gd<br>Ciss<br>4000 ~ oT TT<br>Coss 1<br>2000 a<br>Crss NAA<br>tL<br>0<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Capacitance vs.Drain-to-Source Voltage 

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70<br>60<br>50<br>—<br>EEL  ANE ELE<br>40<br>30<br>20<br>10<br>0 PCC<br>25 50 75 100 125 150 175<br>TC , CaseTemperature (°C)<br>ID  , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Drain Current vs. Case Temperature 

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1000.0 SSS<br>100.0<br>TJ = 175°C<br>10.0<br>ff fo<br>1.0<br>T = 25°C<br>J<br>e — —<br>VGS = 0V<br>P f<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Source-Drain Diode Forward Voltage 

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20<br>v ID= 46A e<br>es<br>VDS= 160V<br>16 VDS= 100V<br>VDS= 40V<br>12<br>HE S S F<br>a n LyAanGP<br>8<br>A ea<br>40 ZEEEJ<br>0 20 40 60 80 100 120<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Gate Charge vs.Gate-to-Source Voltage 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1µsec<br>100<br>100µsec 10µsec<br>a esees | a c Se<br>S et<br>10<br>1<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>Sa<br>0.1<br>1 10 100 1000<br>VDS  , Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Safe Operating Area 

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600<br>0.16<br>ID = 46A                  I D<br>TOP          8.6A<br>500<br>               14A<br>0.12 BOTTOM   39A<br>0.08 nite 400300 CCI\<br>T = 125°C<br>J  200<br>0.04 P QP NKR<br>100<br>T = 25°C<br>J<br>= N S N<br>0.00 TT. 0 | SS<br>5 6 7 8 9 10 25 50 75 100 125 150 175<br>VGS, Gate-to-Source Voltage (V) Starting TJ, Junction Temperature (°C)<br>Fig 13.    On-Resistance Vs. Gate Voltage Fig 14.   Maximum Avalanche Energy Vs. Temperature<br>5.0 200<br>ton= 1µs<br>LF<br>4.5 Duty cycle = 0.25<br>       Half Sine Wave<br>160<br>  Square Pulse<br>My ||<br>4.0<br>ID = 250µA<br>3.5 SERNNO | 120 PS=OReD<br>3.0 PLL EEL INL rest pope | SN<br>N 80 eeeON<br>2.5 EERE ee Ne<br>EREENG ae<br>40<br>2.0<br>SaUGemRnRN po<br>1.5 PL} EEE LL EES 0 esee<br>-75 -50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>TJ , Temperature ( °C ) Case Temperature (°C)<br>VGS(th) Gate threshold Voltage (V)<br>)ΩRDS(on),  Drain-to -Source On Resistance (<br>Repetitive Peak Current (A)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 15.** Threshold Voltage vs. Temperature 

**Fig 16.** Typical Repetitive peak Current vs. Case temperature 

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1<br>D = 0.50<br>0.1 0.20<br>0.01 — oA 0.100.020.05 eA τJ τJτ1τ1 R1 R1 τ2 τR 2 2 R2 Rτ33Rτ 3 3 τCτRi (°C/W)   0.08698  0.0000740.2112    0.001316 τi (sec)<br>Pt IEi  | ph<br>0.01 Ci= τi/Ri 0.1506    0.009395<br>Ci i/Ri<br>Notes:<br>= 2 SINGLE PULSE ee 1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc<br>0.001 AHFa HEA<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 17.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— — D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V t GS=10<br> •<br>| =] - GroundLow StrayPla I n eductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>® - a 38 - ® + RecoveryCurrent r Body Diode ForwardCurrent di/dt /v—<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 _ VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dv/dt controlled by Rg Vpp -<br>•<br>D.U.T. - Device Under Test es ee<br>Isp controlled by Duty Factor "D" @| t Ripple  ≤ 5% ISD<br>* Veg = 5V for Logic Level Devices<br>Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel<br>HEXFET ® Power MOSFETs<br>V(BR)DSS<br>15V ~— tp -—><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>tae 20VVGS in pot<br>tp 0.01 A Ω IAS oe<br> Unclamped Inductive Test Circuit Fig 19b.   Unclamped Inductive Waveforms<br>Rp<br>V<br>Vos >| DS ———<br>90%<br>es D.U.T. |<br>m l +- |<br>| = 10% /\<br>)t 10V VGS TG<br>Pulse Width ≤ 1  ps 1 i<br>Duty Factor ≤ 0.1 % td(on) tr td(off) tf<br>  Switching Time Test Circuit Fig 20b.   Switching Time Waveforms<br>Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>Vgs(th)<br>1K S<br>={"4 Qgs1 \g pl e Qgs2 Qgd ' Qgodr !<br>**----- End of picture text -----**<br>


**Fig 19b.** Unclamped Inductive Waveforms 

**Fig 19a.** Unclamped Inductive Test Circuit 

**Fig 20a.** Switching Time Test Circuit 

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L<br>VCC<br>DUT<br>0<br>1K S<br>={"4<br>**----- End of picture text -----**<br>


**Fig 21b.** Gate Charge Waveform 

**Fig 21a.** Gate Charge Test Circuit 

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**Fig 21a.** tst  and EPULSE Test Circuit 

**Fig 21b.** tst Test Waveforms 

**Fig 21c.** EPULSE Test Waveforms 

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TO-220AB packages are not recommended for Surface Mount Application. 

Repetitive rating;  pulse width limited by  max. junction temperature. Starting TJ = 25°C, L = 0.18mH, RG = 25Ω, IAS = 39A. Pulse width ≤ 400µs; duty cycle ≤ 2%. 

Rθ is measured at TJ of approximately 90°C. Half sine wave with duty cycle = 0.25, ton=1µsec. 

**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2007 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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- [View this product on Novapart](https://novapart.co/products/IRFB4227PBF/power-mosfet-n-channel-200-v-65-a-0024-ohm-to)
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- [Supplier page](https://es.farnell.com/infineon/irfb4227pbf/mosfet-n-200v-to-220/dp/1298536)
---

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