# Power MOSFET, N Channel, 200 V, 18 A, 0.1 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:1436954/)

**URL**: https://novapart.co/products/IRFB4020PBF/power-mosfet-n-channel-200-v-18-a-01-ohm-to-220ab
**SKU**: IRFB4020PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4700
**Stock**: 1000+
**Lead Time**: 148 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.9V; Power Diss

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 100W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 18A |
| Drain Source On State Resistance | 0.1ohm |
| Gate Source Threshold Voltage Max | 4.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1436954/)

## IRFB4020PbF 

## **Features** 

- Key parameters optimized for Class-D audio amplifier applications 

- Low RDSON for improved efficiency 

- Low QG and QSW for better THD and improved efficiency 

- Low QRR for better THD and lower EMI 

|**Key Parameters**|**Key Parameters**|**Key Parameters**|
|---|---|---|
|VDS|200<br>~~ee~~|V<br>~~ee~~|
|RDS(ON)typ. @ 10V|80<br>~~ee~~|m<br>~~ee~~|
|Qgtyp.|18<br>~~ee ~~<br>~~ee~~|nC<br> ~~ee~~<br>~~ee~~|
|Qswtyp.|6.7<br>~~ee~~<br>~~po~~|nC<br>~~ee~~<br>~~po~~|
|RG(int)typ.|3.2<br>~~po~~<br>~~po~~|Ω<br>~~po~~<br>~~po~~|
|TJmax|175<br>~~po~~|°C<br>~~po~~|



- 175°C operating junction temperature for 

- ruggedness 

- Can deliver up to 300W per channel into Ω oad in 

- half-bridge configuration amplifier 

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D<br>G<br>S<br>TO-220AB<br>**----- End of picture text -----**<br>


## **Description** 

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~SS~~|200<br>~~SS~~|V<br>~~SS~~<br>~~G~~|
|VGS|Gate-to-Source Voltage<br>~~SS~~<br>~~a~~<br>~~——————~~|±20<br>~~SS~~<br>~~a~~<br>~~G~~||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V<br>~~SS~~<br>~~a~~<br>~~a~~<br>~~——————~~|18<br>~~SS~~<br>~~a~~<br>~~G~~<br>~~a~~|A<br>~~SS~~<br>~~G~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~pT~~<br>~~——————~~|13<br>~~pT~~||
|IDM|Pulsed Drain Current<br>~~——————~~|52||
|PD@TC= 25°C|Power Dissipation<br>~~——————~~<br>~~pO~~|100<br>~~pO~~|W<br>~~a~~|
|PD@TC= 100°C|Power Dissipation<br>~~a~~|52<br>~~a~~<br>~~Ge~~||
||Linear DeratingFactor<br>~~a~~<br>~~a~~|0.70<br>~~a~~<br>~~a~~<br>~~Ge~~|W/°C<br>~~a~~<br>~~a~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~a~~|-55  to + 175<br>~~a~~<br>~~Ge~~|°C<br>~~a~~|
||Soldering Temperature, for 10 seconds<br>(1.6mm from case)|300||
||Mountingtorque,6-32 or M3 screw<br>~~a~~|10lb n(1.1N m)<br>~~a~~|~~a~~|



> Notes ® hrough © are on page 2 

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**Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~OG~~|200<br>~~OG~~|–––<br>~~OG~~|–––<br>~~OG~~|V<br>~~OG~~|VGS= 0V, ID= 250µA<br>~~OG~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~OG~~<br>~~a~~|–––<br>~~OG~~<br>~~GO~~|0.23<br>~~OG~~<br>~~GO~~|–––<br>~~OG~~<br>~~OO~~|V/°C<br>~~OG~~<br>~~OO~~|Reference to 25°C, ID= 1mA<br>~~OG~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~a~~<br>~~Gs~~|–––<br>~~GO~~<br>~~Gs~~|80<br>~~GO~~<br>~~Gs~~<br>~~ee~~|100<br>~~OO~~<br>~~Gs~~<br>~~ee~~|mΩ<br>~~OO~~<br>~~Gs~~<br>~~ee~~|VGS= 10V, ID= 11A<br>~~Gs~~|
|VGS(th)|Gate Threshold Voltage<br>~~Gs~~<br>~~ee~~|3.0<br>~~Gs~~<br>~~ee~~|–––<br>~~Gs~~<br>~~ee~~<br>~~ee~~|4.9<br>~~Gs~~<br>~~ee~~<br>~~ee~~|V<br>~~Gs~~<br>~~ee~~<br>~~ee~~|VDS= VGS, ID= 100µA<br>~~Gs~~<br>~~ee~~|
|∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~a~~<br>~~ee eee~~|-13<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~eee~~|–––<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~eee~~|mV/°C<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~eee~~||
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~<br>~~a~~<br>~~ee~~|–––<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ee eee~~<br>~~|~~|–––<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~eee~~<br>~~|~~|20<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~eee~~<br>|µA<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~eee~~|VDS= 200V, VGS= 0V<br>~~ee~~<br>~~ee~~|
|||–––<br>~~ee~~<br>~~ee eee~~<br>~~|~~|–––<br>~~ee~~<br>~~eee~~<br>~~||~~|250<br>~~ee~~<br>~~eee~~<br>~~|~~||VDS= 200V, VGS= 0V, TJ= 125°C<br>~~ee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~oo~~|–––<br>~~ee~~<br>~~ee eee~~<br>~~|~~<br>~~oo~~|–––<br>~~ee~~<br>~~eee~~<br>~~||~~<br>~~oo~~|100<br>~~ee~~<br>~~eee~~<br>~~|~~<br>~~oo~~|nA<br>~~ee~~<br>~~eee~~<br>~~oo~~|VGS= 20V<br>~~ee~~<br>~~oo~~|
||Gate-to-Source Reverse Leakage<br>~~oo~~|–––<br>~~oo~~<br>~~a~~|–––<br>~~oo~~<br>~~a~~|-100<br>~~oo~~<br>~~a~~||VGS= -20V<br>~~oo~~|
|gfs|Forward Transconductance<br>~~oo~~<br>~~es~~|24<br>~~oo~~<br>~~a~~<br>~~es~~|–––<br>~~oo~~<br>~~a~~<br>~~es~~|–––<br>~~oo~~<br>~~a~~<br>~~es~~|S<br>~~oo~~<br>~~es~~|VDS= 50V, ID= 11A<br>~~oo~~<br>~~es~~|
|Qg|Total Gate Charge<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|18<br>~~es~~<br>~~ee~~|29<br>~~es~~<br>~~ee~~|nC<br>~~es~~|See Fig. 6 and 18<br>VGS= 10V<br>ID= 11A<br>VDS= 100V<br>~~es~~|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|4.5<br>~~ee~~|–––<br>~~ee~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|1.4<br>~~ee~~|–––<br>~~ee~~|||
|Qgd|Gate-to-Drain Charge<br>~~a~~|–––<br>~~a~~|5.3<br>~~a~~|–––<br>~~a~~|||
|Qgodr|Gate Charge Overdrive<br>~~a~~|–––<br>~~a~~|6.8<br>~~a~~|–––<br>~~a~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~ee~~|–––<br>~~ee~~|6.7<br>~~ee~~|–––<br>~~ee~~|||
|RG(int)|Internal Gate Resistance<br>~~a~~<br>~~ee~~|–––|3.2|–––|Ω|@|
|td(on)|Turn-On DelayTime<br>~~ee~~|–––|7.8|–––|ns|ID= 11A<br>RG= 2.4Ω<br>VDD= 100V, VGS= 10V<br>@|
|tr|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|12<br>~~ee~~|–––<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~<br>~~es~~|16<br>~~ee~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~es~~<br>~~es~~|6.3<br>~~es~~|–––<br>~~es~~|||
|Ciss|Input Capacitance<br>~~es~~<br>~~a~~|–––<br>~~es~~<br>~~es~~<br>~~a~~|1200<br>~~es~~<br>~~a~~|–––<br>~~es~~<br>~~a~~|pF<br>~~+f)~~|ƒ= 1.0MHz,          See Fig.5<br>VGS= 0V<br>VDS= 50V|
|Coss|Output Capacitance<br>~~a~~|–––<br>~~a~~|91<br>~~a~~|–––<br>~~a~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|20<br>~~ee~~|–––<br>~~ee~~|||
|Cosseff.|Effective Output Capacitance<br>~~a~~<br>~~+f)~~|–––<br>~~a~~<br>~~+f)~~|110<br>~~a~~<br>~~+f)~~|–––<br>~~a~~<br>~~+f)~~||VGS= 0V, VDS= 0V to 160V<br>~~+f)~~<br>~~«8~~|
|LD|Internal Drain Inductance<br>~~+f)~~|–––<br>~~+f)~~|4.5<br>~~+f)~~|–––<br>~~+f)~~|nH<br>~~+f)~~|S<br>D<br>G<br>Between  lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~+f)~~<br>~~«8~~|
|LS|Internal Source Inductance<br>~~+f)~~|–––<br>~~+f)~~|7.5<br>~~+f)~~|–––<br>~~+f)~~|||



@ Rθ is measured at Ty of approximately 90°C. © Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive avalanche information. 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.62mH, RG = 25Ω, IAS = 11A. Pulse width ≤ 400µs; duty cycle ≤ 2%. 

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100<br>VGS<br>TOP           15V<br>12V<br>10V<br>8.0V<br>10 7.0V<br>6.0V<br>5.5V<br>BOTTOM 5.0V<br>1<br>A T | a<br>Serie eee<br>0.1<br>5.0V<br>≤60µs PULSE WIDTH<br>Tj = 25°C<br>0.01 airFE oiir_ nn oii<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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100<br>VDS = 25V<br>≤60µs PULSE WIDTH<br>SS<br>ee ee ee ee a A<br>10 TJ = 175°C<br>|a |=| TAS<br>es es | ey es ee<br>Ee osee<br>PAL<br>1 T = 25°C<br>J<br>me arl ae<br>ease<br>0.1 | | ff | ft |<br>2 3 4 5 6 7 8<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>Coss   = Cds + Cgd<br>1000 Ciss<br>Coss<br>NOT HTT<br>100 E E a |<br>10 PTTPE ELE Crss ELESAASEH)<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage 

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100<br>VGS<br>TOP           15V<br>12V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>10 5.5V<br>BOTTOM 5.0V<br>5.0V<br>ey sel<br>1 PAT<br>≤60µs PULSE WIDTH<br>Tj = 175°C<br>0.1 eeeBim neemlll<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>3.5<br>I = 11A<br>D<br>3.0 V GS = 10V<br>Ps} yet pay<br>T ee AAA<br>2.5<br>2.0 F CCAo<br>a e<br>1.5<br>a e<br>1.0<br>e |ee<br>0.5<br>e e<br>0.0 FE EELELELLELEL [|]<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Junction Temperature (°C)<br>Fig 4.   Normalized On-Resistance vs. Temperature<br>12.0<br>I = 11A<br>D<br>10.0 VDS= 160V<br>VDS= 100V<br>8.0 a VDS= 40V /4<br>6.0<br>4.0 a ne<br>/<br>2.00.0 JY} | of<br>0 5 10 15 20<br> QG,  Total Gate Charge (nC)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage 

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100 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>TJ = 175°C 100<br>10 10<br>1<br>T = 25°C<br>J  100µsec<br>1 0.1<br>0.01 T c = 25°C DC 1msec<br>VGS = 0V Tj = 175°CSingle Pulse 10msec<br>0.1 ie 0.001 | es<br>0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>  Typical Source-Drain Diode Forward Voltage Fig 8.   Maximum Safe Operating Area<br>20 5.0<br>18<br>16<br>4.0<br>14<br>12 ID = 100µAD = 100µA= 100µA<br>S EES UII E<br>10 P ot | IN’ | 3.0 IN<br>8<br>6<br>2.0<br>4<br>2<br>0 p | tT | hmT UN 1.0<br>25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 200<br> TJ , Junction Temperature (°C) TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>ID,  Drain Current (A)<br>VGS(th), Gate Threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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5.0<br>4.0<br>ID = 100µAD = 100µA= 100µA<br>UII E<br>3.0 IN<br>2.0<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>VGS(th), Gate Threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Junction Temperature 

**Fig 10.** Threshold Voltage vs. Temperature 

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10<br>Sea mA Oem AAT Sim BaH SRR EREE eR<br>1<br>D = 0.50<br>a<br>0.1 S 0.200.050.100.02 y:lll τJ τJτ1τ1 R1 R1 τ2 τR22 R2 | Rτ33 R τ3 3 τR4τ4R4 4 τCτ Ri (°C/W)   0.0283     0.0000070.3659     0.0001400.7264     0.001376 τi (sec)<br>0.01 Ci= τi/Ri 0.3093     0.007391<br>SINGLE PULSE Ci i/Ri<br>0.01 ( THERMAL RESPONSE )<br>Notes:<br>ee li ee 1. Duty Factor D = t1/t2 tI<br>CCL CC Con 2. Peak Tj = P dm x Zthjc + Tc i<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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300 400<br>275 ID = 11A ID<br>TOP         1.6A<br>250 2.4A<br>225 oo = 300  O N BOTTOM 11A<br>200 AX TJ = 125 ° C<br>ARERR NULL<br>175 200<br>150<br>125<br>PTT TT TT Ty TT N a<br>100<br>100 T J  = 25°C<br>HET E SS<br>75<br>HHHce AL RSAil<br>50 0<br>5 6 7 8 9 10 11 12 13 14 15 16 25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


VGS, Gate -to -Source Voltage  (V) 

**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

**Fig 12.** On-Resistance vs. Gate Voltage 

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1000<br>100 Duty Cycle = Single Pulse<br>Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>10 0. 01 assuming  ∆ Tj = 25°C due to<br>avalanche losses<br>0.05<br>1 0.10<br>0.1<br>0.01<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14.   Typical Avalanche Current Vs.Pulsewidth<br>100 Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>(For further info, see AN-1005 at www.irf.com)<br>TOP          Single Pulse<br>1. Avalanche failures assumption:<br>BOTTOM   1.0% Duty Cycle<br>  Purely a thermal phenomenon and failure occurs at a<br>80 ID = 11A     temperature far in excess of Tjmax. This is validated for<br>A     every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax isjmax is is<br>60   not exceeded.<br>3. Equation below based on circuit and waveforms shown in<br>S ST<br>  Figures 17a, 17b.<br>4. PD (ave) = Average power dissipation per single<br>40     avalanche pulse.<br>C ST 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>    voltage increase during avalanche).<br>20 6. Iav = Allowable avalanche current.<br>T T SATT 7. ∆T = Allowable rise in junction temperature, not to exceed<br>    Tjmax (assumed as 25°C in Figure 14, 15).<br>0 T UTTI   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>  ZthJC(D, tav) = Transient thermal resistance, see figure 11)thJC(D, tav) = Transient thermal resistance, see figure 11)(D, tav) = Transient thermal resistance, see figure 11)av) = Transient thermal resistance, see figure 11)) = Transient thermal resistance, see figure 11)<br>Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) =av) =) =  = 1/2 ( 1.3·BV·Iav) =av) =) = T/ ZthJCthJC<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


2. Safe operation in Avalanche is allowed as long asTjmax isjmax is is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 17a, 17b. 

- ZthJC(D, tav) = Transient thermal resistance, see figure 11)thJC(D, tav) = Transient thermal resistance, see figure 11)(D, tav) = Transient thermal resistance, see figure 11)av) = Transient thermal resistance, see figure 11)) = Transient thermal resistance, see figure 11) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =av) =) = T/ ZthJCthJC** 

**Iav = 2 T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>tt 20VVGS<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

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LD<br>VDS<br>otis<br>+<br>VDD -<br>D.U.T<br>VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>**----- End of picture text -----**<br>


**Fig 17a.** Switching Time Test Circuit 

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L<br>VCC<br>DUT<br>0<br>1K<br>a:<br>**----- End of picture text -----**<br>


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V(BR)DSS<br><< tp ><br>/<br>y |<br>/<br>IAS<br>Fig 16b.   Unclamped Inductive Waveforms<br>V<br>DS<br>90% —<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 18b** Gate Charge Waveform 

**Fig 18a.** Gate Charge Test Circuit 

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Note:   "P" in assembly line<br>position indicates "Lead-Free"<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 03/06 

www.irf.com 

7 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFB4020PBF/power-mosfet-n-channel-200-v-18-a-01-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfb4020pbf/mosfet-n-200v-to-220ab/dp/1436954)
---

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