# Power MOSFET, N Channel, 150 V, 17 A, 0.095 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2776861/)

**URL**: https://novapart.co/products/IRFB4019PBF/power-mosfet-n-channel-150-v-17-a-0095-ohm-to
**SKU**: IRFB4019PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4350
**Stock**: 500+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.9V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 80W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 17A |
| Drain Source On State Resistance | 0.095ohm |
| Gate Source Threshold Voltage Max | 4.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2776861/)

## IRFB4019PbF 

## **Features** 

- Key Parameters Optimized for Class-D Audio Amplifier Applications 

- Low RDSON for Improved Efficiency 

- Low QG and QSW for Better THD and Improved Efficiency 

- Low QRR for Better THD and Lower EMI 

**Key Parameters** ~~ee~~ VDS 150 ~~ee ee~~ V ~~ee~~ RDS(ON) typ. @ 10V 80 ~~ee eo~~ m ~~ee~~ Qg typ. ~~ee~~ 13 nC ~~ee ee~~ Qsw typ. 5.1 ~~ee~~ nC ~~ee ee~~ RG(int) typ. 2.4 ~~ee ee~~ Ω ~~ee~~ TJ max 175 ~~ee~~ °C 

- 175°C Operating Junction Temperature for 

- Ruggedness 

- Can Deliver up to 200W per Channel into 8Ω Load in 

- Half-Bridge Configuration Amplifier 

## **Description** 

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D<br>D<br>G<br>S<br>D<br>G<br>S<br>TO-220AB<br>G D S<br>Gate Drain Source<br>**----- End of picture text -----**<br>


This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. 

## **Absolute Maximum Ratings** 

|~~as~~||||
|---|---|---|---|
|~~as~~|**Parameter**|**Max.**|**Units**|
|VDS<br>~~as~~<br>~~SS~~<br>~~as~~|Drain-to-Source Voltage<br>~~SS~~|150<br>~~SS~~|V|
|VGS<br>~~as~~|Gate-to-Source Voltage|±20||
|ID@ TC= 25°C<br>~~as~~|Continuous Drain Current, VGS@ 10V|17|A|
|ID@ TC= 100°C<br>~~a~~<br>~~es~~|Continuous Drain Current, VGS@ 10V<br>~~©~~|12||
|IDM<br>~~es~~<br>~~es~~|Pulsed Drain Current<br>~~©~~<br>~~en~~|51||
|PD@TC= 25°C<br>~~es~~<br>~~es~~<br>~~Se~~|Power Dissipation<br>~~©~~<br>~~en~~<br>~~Se~~|80<br>~~Se~~|W<br>~~Se~~|
|PD@TC= 100°C<br>~~es~~<br>~~Se~~|Power Dissipation<br>~~en~~<br>~~Se~~|40<br>~~Se~~||
||Linear Derating Factor|0.5|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|°C|
|~~ad~~|Soldering Temperature, for 10 seconds<br>(1.6mm from case)|300||
|~~ad~~|Mountingtorque,6-32 or M3 screw|10lb in(1.1N m)||



## **Thermal Resistance** 

|~~as~~<br>~~as~~|**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC<br>~~as~~<br>~~as~~<br>~~es~~|Junction-to-Case|–––|1.88|°C/W|
|RθCS<br>~~as~~<br>~~es~~<br>~~ae~~|Case-to-Sink,Flat,Greased Surface<br>~~©en~~|0.50|–––||
|RθJA<br>~~es~~<br>~~ae~~|Junction-to-Ambient<br>~~©en~~|–––|62||



www.irf.com 

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3/2/06 

**Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~es~~<br>~~po~~|**Parameter**<br>~~es~~<br>|**Min.**<br>~~es~~<br>~~SD~~<br>|**Typ.**<br>~~es~~<br>~~SD~~<br>|**Max. **<br>~~es~~<br>~~OD~~<br>|**Units**<br>~~es~~<br>~~GO~~<br>|**Conditions**<br>~~es~~<br>|
|---|---|---|---|---|---|---|
|BVDSS<br>~~es~~<br>~~po~~|Drain-to-Source Breakdown Voltage<br>~~es~~<br>|150<br>~~es~~<br>~~SD~~<br>|–––<br>~~es~~<br>~~SD~~<br>|–––<br>~~es~~<br>~~OD~~<br>|V<br>~~es~~<br>~~GO~~<br>|VGS= 0V,ID= 250µA<br>~~es~~<br>|
|∆ΒVDSS/∆TJ<br>~~popO~~|Breakdown Voltage Temp. Coefficient<br>~~pO~~|–––<br>~~SD~~<br>~~pO~~|0.19<br>~~SD ~~<br>~~pO~~|–––<br> ~~OD~~<br>~~pO~~|V/°C<br>~~GO~~<br>~~pO~~|Reference to 25°C,ID= 1mA<br>~~pO~~|
|RDS(on)<br>~~pO~~<br>~~pf~~<br>~~ee~~|Static Drain-to-Source On-Resistance<br>~~pO~~<br>~~pf~~<br>~~ee~~|–––<br>~~pO~~<br>~~pf~~<br>~~ee~~|80<br>~~pO~~<br>~~pf~~<br>~~ee~~|95<br>~~pO~~<br>~~pf~~<br>~~ee~~|mΩ<br>~~pO~~<br>~~pf~~<br>~~ee~~|VGS= 10V,ID= 10A<br>~~pO~~<br>~~pf~~<br>~~ee~~|
|VGS(th)<br>~~ee~~|Gate Threshold Voltage<br>~~ee~~|3.0<br>~~ee~~|–––<br>~~ee~~|4.9<br>~~ee~~|V<br>~~ee~~|VDS= VGS, ID= 50µA<br>~~ee~~<br><br>~~EE~~|
|∆VGS(th)/∆TJ<br>~~ee~~<br>~~a~~|Gate Threshold Voltage Coefficient<br>~~ee~~<br>|–––<br>~~ee~~<br>|-13<br>~~ee~~<br><br>~~EE~~|–––<br>~~ee~~<br><br>~~EE~~|mV/°C<br>~~ee~~<br><br>~~EE~~||
|IDSS<br>~~ee~~<br>~~ee~~<br>~~_—————————EE~~|Drain-to-Source Leakage Current<br>~~ee~~<br>~~ee~~<br>~~_—————————EE~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~EE~~|20<br>~~ee~~<br>~~ee~~<br>~~EE~~|µA<br>~~ee~~<br>~~ee~~<br>~~EE~~<br>~~_—————————EE~~|VDS= 150V,VGS= 0V<br>~~ee~~<br>~~ee~~<br>~~EE~~|
|||–––<br>~~ee~~<br>~~a~~<br>~~_—————————EE~~|–––<br>~~ee~~<br>~~EE~~<br>~~a~~<br>~~_—————————EE~~|250<br>~~ee~~<br>~~EE~~<br>~~a~~<br>~~_—————————EE~~||VDS= 150V,VGS= 0V,TJ= 125°C<br>~~ee~~<br>~~EE~~<br>~~_—————————EE~~|
|IGSS<br>~~_—————————EE~~|Gate-to-Source Forward Leakage<br>~~_—————————EE~~|–––<br>~~_—————————EE~~|–––<br>~~EE~~<br>~~_—————————EE~~|100<br>~~EE~~<br>~~_—————————EE~~|nA<br>~~EE~~<br>~~_—————————EE~~|VGS= 20V<br>~~EE~~<br>~~_—————————EE~~|
||Gate-to-Source Reverse Leakage<br>~~_—————————EE~~<br>~~DG~~|–––<br>~~_—————————EE~~<br>~~DG~~|–––<br>~~_—————————EE~~<br>~~DG~~|-100<br>~~_—————————EE~~<br>~~DG~~||VGS= -20V<br>~~_—————————EE~~|
|gfs<br>~~_—————————EE~~<br>~~pe~~<br>~~es~~|Forward Transconductance<br>~~_—————————EE~~<br>~~pe~~|14<br>~~_—————————EE~~<br>~~pe~~|–––<br>~~_—————————EE~~<br>~~pe~~|–––<br>~~_—————————EE~~<br>~~pe~~|S<br>~~_—————————EE~~<br>~~pe~~|VDS= 10V,ID= 10A<br>~~_—————————EE~~<br>~~pe~~|
|Qg<br>~~pe~~<br>~~es~~<br>~~ee~~<br>~~a~~|Total Gate Charge<br>~~pe~~<br>~~ee~~<br>|–––<br>~~pe~~<br>~~ee~~<br>~~es~~<br>|13<br>~~pe~~<br>~~ee~~<br>|20<br>~~pe~~<br>~~ee~~<br>|nC<br>~~pe~~<br>|See Fig. 6 and 19<br>VGS= 10V<br>ID= 10A<br>VDS= 75V<br>~~pe~~<br>|
|Qgs1<br>~~es~~<br>~~ee~~<br>~~a~~|Pre-Vth Gate-to-Source Charge<br>~~ee~~<br>|–––<br>~~ee~~<br>~~es~~<br>|3.3<br>~~ee~~<br>|–––<br>~~ee~~<br>|||
|Qgs2<br>~~ee~~<br>~~aee~~<br>~~es~~|Post-Vth Gate-to-Source Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~es~~|0.95<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|Qgd<br>~~aee~~<br>~~es~~|Gate-to-Drain Charge<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>~~es~~|4.1<br>~~ee~~|–––<br>~~ee~~|||
|Qgodr<br>~~ee~~<br>~~es~~<br>~~es~~|Gate Charge Overdrive<br>~~ee~~<br>|–––<br>~~ee~~<br>~~es~~<br>|4.7<br>~~ee~~<br>|–––<br>~~ee~~<br>|||
|Qsw<br>~~es~~<br>~~es~~|Switch Charge(Qgs2+ Qgd)<br>|–––<br>~~es~~<br>|5.1<br>|–––<br>|||
|RG(int)<br>~~espf~~|Internal Gate Resistance<br>~~pf~~|–––<br>~~pf~~|2.4<br>~~pf~~|–––<br>~~pf~~|Ω<br>~~pf~~|~~pf~~|
|td(on)<br>~~pf~~<br>~~es~~<br>~~es~~|Turn-On DelayTime<br>~~pf~~<br>~~ee~~|–––<br>~~pf~~<br>~~ee~~|7.0<br>~~pf~~<br>~~ee~~|–––<br>~~pf~~<br>~~ee~~|ns<br>~~pf~~|ID= 10A<br>RG= 2.4Ω<br>VDD= 75V, VGS= 10V<br>~~pf~~<br>@|
|tr<br>~~es~~<br>~~es~~|Rise Time<br>~~ee~~|–––<br>~~ee~~|13<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~es~~<br>~~es~~|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~|12<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~es~~<br>~~a~~|Fall Time|–––|7.8|–––|||
|Ciss<br>~~a~~<br>~~es~~<br>~~es~~|Input Capacitance<br>~~ee~~|–––<br>~~ee~~|800<br>~~ee~~|–––<br>~~ee~~|pF|ƒ= 1.0MHz,See Fig.5<br>VGS= 0V<br>VDS= 50V|
|Coss<br>~~es~~<br>~~es~~|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|74<br>~~ee~~|–––<br>~~ee~~|||
|Crss<br>~~es~~<br>~~es~~<br>~~po~~|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|19<br>~~ee~~|–––<br>~~ee~~|||
|Coss<br>~~es~~<br>~~po~~|Effective Output Capacitance|–––|99|–––||VGS= 0V,VDS= 0V to 120V|
|LD<br>~~po~~|Internal Drain Inductance|–––|4.5|–––|nH|S<br>D<br>G<br>Between  lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact|
|LS|Internal Source Inductance|–––|7.5|–––|||



|**Diode Characte**<br>~~Ss~~|**acteristics**||||||
|---|---|---|---|---|---|---|
|~~Ss~~|**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|IS@ TC= 25°C<br>~~Ss~~|Continuous Source Current<br>(Body Diode)|–––|–––|17|A<br>~~O~~|showing  the<br>integral reverse<br>p-n junction diode.<br>MOSFET symbol<br>~~OO”~~|
|ISM<br>~~Ss~~<br>~~es~~|Pulsed Source Current<br>(Body Diode)<br>~~OD~~|–––<br>~~OD~~|–––<br>~~OD~~|51<br>~~OD~~|||
|VSD<br>~~es~~<br>~~**e**ne~~|Diode Forward Voltage<br>~~OD~~<br>~~ne~~|–––<br>~~OD~~<br>~~ee~~|–––<br>~~OD~~<br>~~ee~~|1.3<br>~~OD~~|V<br>~~O~~|TJ= 25°C,IS= 10A,VGS= 0V<br>~~OO”~~|
|trr<br>~~es~~<br>~~**e**ne~~<br>~~e~~|Reverse RecoveryTime<br>~~OD~~<br>~~ne~~|–––<br>~~OD~~<br>~~ee~~|64<br>~~OD~~<br>~~ee~~|96<br>~~OD~~|ns<br>~~O~~|TJ= 25°C, IF= 10A<br>di/dt = 100A/µs<br>~~OO”~~<br>~~@~~|
|Qrr<br>~~**e**ne~~<br>~~e~~|Reverse RecoveryCharge<br>~~ne~~|–––<br>~~ee~~|160<br>~~ee~~|240|nC||



> Repetitive rating;  pulse width limited by max. junction temperature. @ Rθ is measured at T, of approximately 90°C. 

> Starting TJ = 25°C, L = 1.46mH, RG = 25Ω, IAS = 10A. © Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive Pulse width ≤≤ 400µs; duty cycle ≤ 2%. 2%. ≤ 2%. 2%. avalanche information 

Pulse width ≤≤ 400µs; duty cycle ≤ 2%. 2%. 

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100<br>VGS<br>TOP           15V<br>12V<br>10V<br>10 8.0V<br>7.0V<br>nell 6.0V<br>                    5.5V<br>BOTTOM 5.0V<br>1<br>SE ar Se Ai eeeenlAH<br>0.1 I<br>5.0V<br>≤ 60µs PULSE WIDTH<br>Tj = 25°C<br>0.01 anil Baill<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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100.0<br>VDS = 25V<br>≤ 60µs PULSE WIDTH<br>=<br>10.0<br>Wl TJ = 175°C 7_—| _<br>1.0 T J  = 25°C<br>—— / -—<br>0.1<br>VEL<br>2 4 6 8 10<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics<br>10000<br>VGS   = 0V,       f = 1 MHZ<br>=e Ciss   = Cgs + Cgd,  Cds SHORTED<br>ae Crss   = Cgd<br>Coss  = Cds + Cgd<br>1000<br>yoo Ciss<br>SH<br>as Seeman<br>Coss<br>100<br>Sth Sil ai<br>CCUM Crss pri Fl<br>10<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage 

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100<br>VGS<br>TOP           15V<br>12V<br>10V<br>8.0V<br>7.0V<br>6.0V Ani |<br>10                     5.5V<br>BOTTOM 5.0V<br>5.0V<br>1 | errjill<br>TT Th<br>Ooia ai<br>≤ 60µs PULSE WIDTH<br>Tj = 175°C<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>3.0<br>ID = 10A<br>VGS = 10V<br>2.5 TTT TTTTY<br>2.0 LEELAPELLET<br>1.5<br>TTYSERURPAaunen<br>1.0<br>0.5 eTTELEE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ,  Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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20<br>ID= 10A<br>aa |<br>VDS= 120V<br>16 So VDS= 75V {|<br>VDS= 30V<br>12 aa i<br>4<br>8 | |<br>an<br>4<br>0 fo<br>0 5 10 15 20<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage 

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100 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>aa 100 Sei een<br>10 100µsec<br>TJ = 175°C<br>1 m sec<br>| a a cee<br>10<br>ar MaSee c [P] eeses [o][r] [erean] [h] [ell][M] il [E]<br>10msec<br>1 ee ee ee Ses e rom MSe nsis M eeemeaealEL<br>TJ = 25°C<br>1<br>PTT [|] s ieceri<br>Tc = 25°C<br>VGS = 0V Tj = 175°CSingle Pulse DC he ea<br>0.1 0.1<br>0.0 0.5 1.0 1.5 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>Fig 7.   Typical Source-Drain Diode Forward Voltage Fig 8.   Maximum Safe Operating Area<br>20 5.0<br>16<br>4.0<br>12 ID = 50µA<br>Base 3.0 ELEPPS NG<br>ALELLENELLBase LL<br>8<br>2.0<br>4<br>0 1.0<br>25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Junction Temperature (°C) TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>ID  , Drain Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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20<br>16<br>12<br>ALELLENELLBase<br>8<br>4<br>0<br>25 50 75 100 125 150 175<br>TJ , Junction Temperature (°C)<br>ID  , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Threshold Voltage vs. Temperature 

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10 eee | eee ee eee ea | eee el lee Gl<br>1 D = 0.50<br>0.20<br>pe Sr LTT EL<br>i 0.10 em EE<br>0.1 0.05 R1 R1 R2 R2 R3 R 3 Ri (°C/W) τι (sec)<br>— a τJ τJ τCτ ————] 0.535592 0.000222<br>0.02 τ1 τ1 τ2 τ2 τ3τ3 0.913763 0.001027<br>0.01<br>Le Pe EE Ci=  L τi/Ri L L |<br>Ci= τi/Ri 0.432454 0.006058<br>0.01 2 |rere e |<br>SINGLE PULSE Notes:<br>-~— | | ( THERMAL RESPONSE ) ee 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 fs ee ee ee<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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0.5<br>ID = 10A<br>0.4<br>i tt<br>0.3 we EE<br>0.2<br>Siseen<br>TJ = 125°C<br>0.1<br>Blin<br>TJ = 25°C<br>|<br>0.0 Perr<br>4 6 8 10 12 14 16<br>VGS, Gate-to-Source Voltage (V)<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


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300<br>                 I D<br>250 TOP          1.3A<br>                2.3A<br>BOTTOM   10A<br>200 NE<br>Ne<br>150<br>100 RACE<br>q IN<br>50<br>ANNO<br>0 SS<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


## **Fig 12.** On-Resistance Vs. Gate Voltage 

**Fig 13.** Maximum Avalanche Energy Vs. Drain Current 

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100<br>FETAATTA<br>Allowed avalanche Current vs avalanche<br>Duty Cycle = Single Pulse pulsewidth, tav, assuming  ∆Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>10 Somer 00||| 0 a ||<br>0.01<br>Sesser ea pg ET EET<br>0.05<br>0.10<br>1 See e ast et ed<br>ee I<br>p Allowed avalanche Current vs avalanche  T<br>Esse LEHI TTT<br>pulsewidth, tav, assuming ∆Τ j = 25°C and<br>Tstart = 150°C.<br>ee<br>oor | | Co HHH<br>0.1 Prope Sa), ee eeen<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


tav (sec) 

## **Fig 14.** Typical Avalanche Current Vs.Pulsewidth 

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80<br>TOP          Single Pulse<br>BOTTOM   1% Duty Cycle<br>ID = 10A<br>60<br>40<br>BN<br>20<br>LILES<br>ELEN<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 15.** Maximum Avalanche Energy Vs. Temperature 

**Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com)** 

1. Avalanche failures assumption: 

- Purely a thermal phenomenon and failure occurs at a 

- temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max) is exceeded 

3. Equation below based on circuit and waveforms shown in Figures 17a, 17b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. ∆T = Allowable rise in junction temperature, not to exceed 

- Tjmax (assumed as 25°C in Figure 14, 15). 

- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see figure 11) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC** 

**Iav = 2 T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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**==> picture [415 x 340] intentionally omitted <==**

**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + <—___—— P.W. Period ——— | D = —_—— Period<br>) [®@]    •  Circuit Layout Considerations | V tt x GS=10V<br> •<br>| —] - LowGround StrayPla I n eductance<br> •   Low Leakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oat - Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>; 00 ay VDD<br>ms<br>•   Re-Applied<br>Re ’ •   dv/dt controlledDriver same type byas RgD.U.T. Vpp** + Voltage Body Diode  Forward Drop<br>•   - Inductor Curent<br>•<br>D.U.T. - Device Under Test es<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor"D" ®<br>Use P-Channel Driver for P-Channel Measurements *** Vigg = 5V for Logic Level Devices<br>Reverse Polarity for P-Channel<br>Fig 16.  Diode Reverse Recovery Test Circuit for HEXFET ®  Power MOSFETs<br>V(BR)DSS(BR)DSS<br>15V << tp<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>20VVGS<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**==> picture [179 x 265] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS(BR)DSS<br><< tp<br>IAS<br>Fig 17b.   Unclamped Inductive Waveforms<br>V<br>DS<br>90% X<br>10%<br>V<br>GS<br>rt } rn I<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


## **Fig 17b.** Unclamped Inductive Waveforms 

## **Fig 17a.** Unclamped Inductive Test Circuit 

**==> picture [149 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
LD<br>VDS<br>+<br>VDD -<br>D.U.T<br>VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>  Switching Time Test Circuit<br>Current Regulator<br>rs Same Type as D.U.T.<br>t 50KΩ |<br>fd 12V .2µF |<br>.3µF<br>|<br>eeeeT +<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG + ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


## **Fig 18a.** Switching Time Test Circuit 

## **Fig 18b.** Switching Time Waveforms 

**==> picture [161 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds q<br>Vgs<br>f<br>Vgs(th)<br><_<<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 19a.** Gate Charge Test Circuit 

**Fig 19b** Gate Charge Waveform 

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**==> picture [390 x 85] intentionally omitted <==**

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER<br>a RF1010<br>IN THE ASSEMBLY LINE "C" LOGO TeaR 0190 te<br>DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 03/06 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFB4019PBF/power-mosfet-n-channel-150-v-17-a-0095-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfb4019pbf/mosfet-n-ch-150v-17a-to-220ab/dp/2776861)
---

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