# Power MOSFET, N Channel, 200 V, 44 A, 0.054 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8657955/)

**URL**: https://novapart.co/products/IRFB38N20DPBF/power-mosfet-n-channel-200-v-44-a-0054-ohm-to
**SKU**: IRFB38N20DPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.2600
**Stock**: 200+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power D

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 320W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 44A |
| Drain Source On State Resistance | 0.054ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8657955/)

IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF ~~a~~ 

## ~~Cinfineon~~ 

HEXFET[® ] Power MOSFET 

## **Applications** 

- High frequency DC-DC converters 

- Plasma Display Panel 

## **Benefits** 

- Low Gate-to-Drain Charge to Reduce Switching Losses 

- Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

- Fully Characterized Avalanche Voltage and Current 

- Lead-Free 

|IRFB38N20DPbF<br>IRFS38N20DPbF<br>IRFSL38N20DPbF<br>HEXFET[® ]Power MOSFET<br>~~a~~|IRFB38N20DPbF<br>IRFS38N20DPbF<br>IRFSL38N20DPbF<br>HEXFET[® ]Power MOSFET<br>~~a~~|IRFB38N20DPbF<br>IRFS38N20DPbF<br>IRFSL38N20DPbF<br>HEXFET[® ]Power MOSFET<br>~~a~~|
|---|---|---|
|**Key Parameters**|||
|**VDS**|**200**|**V**|
|**VDS(Avalanche)min.**|**260**|**V**|
|**RDS(on) max@ 10V**|**54**|**m**|
|**TJ max**|**175**|**°C**|



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**----- Start of picture text -----**<br>
D  D<br>D<br>S  S  S<br>G D  G  G  [D ]<br>TO-220AB  D2 Pak  TO-262 Pak<br>IRFB38N20DPbF  IRFS38N20DPbF  IRFSL38N20DPbF<br>G  D  S<br>Gate  Drain  Source<br>a<br>**----- End of picture text -----**<br>


|||**G**<br>Gate<br>~~a~~|**G**<br>Gate<br>~~a~~|**D**<br>**S**<br>Drain<br>Source<br>~~a~~|
|---|---|---|---|---|
|**Base part number**|**Package Type**|**Standard Pack**||**Orderable Part Number**|
|||**Form**|**Quantity**||
|IRFB38N20DPbF|TO-220|Tube|50|IRFB38N20DPbF|
|IRFSL38N20DPbF|TO-262|Tube|50|IRFSL38N20DPbF|
|IRFS38N20DPbF|D2-Pak|Tube|50|IRFS38N20DPbF|
|||Tape and Reel Left|800|IRFS38N20DTRLPbF|



## **Absolute Maximum Ratings** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V|43*|A|
|ID @TC= 100°C|Continuous Drain Current,VGS @10V|30*||
|IDM|Pulsed Drain Current|180||
|PD@TA= 25°C|Maximum Power Dissipation|3.8|W|
|PD@TC= 25°C|Maximum Power Dissipation|300*|W|
||Linear Derating Factor|2.0*|W/°C|
|VGS|Gate-to-SourceVoltage|±30|V|
|dv/dt|Peak Diode Recoverydv/dt|9.5|V/ns|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|°C|
||SolderingTemperature,for 10 seconds(1.6mm from case)|300||
||Mountingtorque,6-32 or M3 screw|10 lbf•in(1.1N•m)||



## **Thermal Resistance** 

|**Thermal Resistance**|||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Units**|
|RJC|Junction-to-Case|–––|0.47*|°C/W|
|RCS|Case-to-Sink,Flat,Greased Surface|0.50|–––||
|RJA|Junction-to-Ambient|–––|62||
|RJA|Junction-to-Ambient(PCB Mount,steadystate) |–––|40||



- RJC (end of life) for D2Pak and TO-262  = 0.50°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wear out of the die attach medium. 

Notes  through  are  on page 2. 

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~~Cinfineon~~ 

IRFB/S/SL38N20DPbF ~~[|~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-SourceBreakdown Voltage<br>200<br>–––<br>–––<br>V<br>VGS=0V,ID= 250µA<br>V(BR)DSS/TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.22<br>–––<br>V/°C Reference to 25°C,ID= 1mA<br>RDS(on) <br>Static Drain-to-Source On-Resistance<br>–––<br>–––<br>0.054<br>VGS= 10V,ID= 26A<br>VGS(th)<br>Gate Threshold Voltage<br>3.0<br>–––<br>5.0<br>V<br>VDS= VGS,ID= 250µA<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>25<br>µAVDS =200 V, VGS =0V<br>–––<br>–––<br>250<br>VDS =160V,VGS =0V,TJ =150°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nAVGS =30V<br>Gate-to-Source Reverse Leakage<br>–––<br>-100<br>VGS = -30V<br>~~ee~~<br>~~I (I~~<br>~~rs I~~<br>~~Be~~<br>~~es~~<br>~~eses~~<br>~~I I~~<br>~~essn~~<br>~~eS~~<br>~~SE~~<br>~~a~~<br>~~PO~~<br>~~OEE~~<br>~~es ee~~<br>~~ee~~<br>~~Po~~|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-SourceBreakdown Voltage<br>200<br>–––<br>–––<br>V<br>VGS=0V,ID= 250µA<br>V(BR)DSS/TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.22<br>–––<br>V/°C Reference to 25°C,ID= 1mA<br>RDS(on) <br>Static Drain-to-Source On-Resistance<br>–––<br>–––<br>0.054<br>VGS= 10V,ID= 26A<br>VGS(th)<br>Gate Threshold Voltage<br>3.0<br>–––<br>5.0<br>V<br>VDS= VGS,ID= 250µA<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>25<br>µAVDS =200 V, VGS =0V<br>–––<br>–––<br>250<br>VDS =160V,VGS =0V,TJ =150°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nAVGS =30V<br>Gate-to-Source Reverse Leakage<br>–––<br>-100<br>VGS = -30V<br>~~ee~~<br>~~I (I~~<br>~~rs I~~<br>~~Be~~<br>~~es~~<br>~~eses~~<br>~~I I~~<br>~~essn~~<br>~~eS~~<br>~~SE~~<br>~~a~~<br>~~PO~~<br>~~OEE~~<br>~~es ee~~<br>~~ee~~<br>~~Po~~|
|---|---|
|**Dynamic@ TJ = 25°C(unless otherwise specified)**||
|gfs<br>Forward Trans conductance<br>17<br>–––<br>–––<br>S<br>VDS= 50V,ID= 26A<br>Qg<br>Total Gate Charge<br>–––<br>60<br>91<br>ID= 26A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>17<br>25<br>VDS= 100V<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>28<br>42<br>VGS= 10V<br>td(on)<br>Turn-On Delay Time<br>–––<br>16<br>–––<br>ns<br>VDD= 100V<br>tr<br>RiseTime<br>–––<br>95<br>–––<br>ID=26A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>29<br>–––<br>RG= 2.5<br>tf<br>Fall Time<br>–––<br>47<br>–––<br>VGS= 10V<br>Ciss<br>Input Capacitance<br>–––<br>2900<br>–––<br>pF<br>VGS= 0V<br>Coss<br>OutputCapacitance<br>–––<br>450<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>73<br>–––<br>ƒ= 1.0MHz<br>Coss<br>OutputCapacitance<br>–––<br>3550<br>–––<br>VGS=0V,VDS= 1.0Vƒ= 1.0MHz<br>Coss<br>Output Capacitance<br>–––<br>180<br>–––<br>VGS =0V, VDS =160V ƒ=1.0MHz<br>Coss eff.<br>Effective OutputCapacitance<br>–––<br>380<br>–––<br>VGS=0V,VDS=0V to160V<br>nC<br>~~es~~<br>~~rs rsQs(~~<br>~~eeee~~<br>~~es~~<br>~~esee~~<br>~~es~~<br>~~ee~~<br>~~eees~~<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~eeee~~<br>~~es~~<br>~~esee~~<br>~~Pe~~<br>~~ee~~<br>~~**Pe**~~<br>~~eees ed~~|1.0MHz|
|**Avalanche Characteristics**||
|**Parameter **<br>**Min.**<br>**Typ. **<br>**Max.**<br>**Units**||
|EAS<br>Single Pulse Avalanche Energy <br>–––<br>–––<br>460<br>mJ||
|IAR<br>Avalanche Current<br>–––<br>–––<br>26<br>A||
|EAR<br>Repetitive Avalanche Energy <br>–––<br>390<br>–––<br>mJ||
|VDS (Avalanche)<br>Repetitive Avalanche Voltage<br>260<br>–––<br>–––<br>V||



|VDS (Avalanche)<br>Repetitive Avalanche Voltage<br>260<br>–––<br>–––<br>V|VDS (Avalanche)<br>Repetitive Avalanche Voltage<br>260<br>–––<br>–––<br>V|VDS (Avalanche)<br>Repetitive Avalanche Voltage<br>260<br>–––<br>–––<br>V|VDS (Avalanche)<br>Repetitive Avalanche Voltage<br>260<br>–––<br>–––<br>V|VDS (Avalanche)<br>Repetitive Avalanche Voltage<br>260<br>–––<br>–––<br>V|VDS (Avalanche)<br>Repetitive Avalanche Voltage<br>260<br>–––<br>–––<br>V|VDS (Avalanche)<br>Repetitive Avalanche Voltage<br>260<br>–––<br>–––<br>V|
|---|---|---|---|---|---|---|
|**Diode Characteristics**<br>~~esDD~~<br>~~UDGD(OO~~|||||||
|~~esDD~~|**Parameter **<br>~~DD~~|**Min.**<br>~~DD~~|**Typ. M**<br>~~DD~~|**. Max.**<br>~~DD~~<br>~~UD~~|**Units**<br>~~DD~~<br>~~GD~~|**Conditions**<br>~~DD~~<br>~~(OO~~|
|IS<br>~~esDD~~<br>~~AH~~|Continuous Source Current<br>(Body Diode)<br>~~DD~~<br>~~AH~~|–––<br>~~DD~~<br>~~AH~~|–––<br>~~DD~~<br>~~AH~~|44<br>~~DD~~<br>~~UD~~<br>~~AH~~|A<br>~~DD~~<br>~~GD~~<br>~~AH~~<br>~~Q~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~DD~~<br>~~(OO~~<br>~~QO~~|
|ISM<br>~~AH~~<br>~~es~~|Pulsed Source Current<br>(Body Diode)<br>~~AH~~<br>~~Ds~~|–––<br>~~AH~~<br>~~Ds~~|–––<br>~~AH~~<br>~~(Rs~~|180<br>~~AH~~<br>~~GO Q~~|||
|VSD<br>~~es~~<br>~~Ce~~|Diode Forward Voltage<br>~~Ds~~|–––<br>~~Ds~~|–––<br>~~(Rs~~|1.5<br>~~GO Q~~|V<br>~~Q~~|TJ =25°C,IS=26A,VGS =0V<br>~~QO~~|
|trr<br>~~es~~<br>~~Ce~~<br>~~ee~~|Reverse Recovery Time<br>~~Ds~~|–––<br>~~Ds~~|160<br>~~(Rs ~~|240<br> ~~GO Q~~|ns<br>~~Q~~|TJ= 25°C ,IF= 26A<br>di/dt = 100A/µs<br>~~QO~~|
|Qrr<br>~~Ce~~<br>~~ee~~<br>~~ee~~|Reverse RecoveryCharge|–––|1.3|2.0|C||
|ton<br>~~Ce~~<br>~~ee~~<br>~~ee~~|Forward Turn-On Time|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)|||||



## **Notes:** 

-  Repetitive rating;  pulse width limited by max. junction temperature. 

-  starting  TJ = 25°C, L = 1.3mH, RG = 25, IAS = 26A. 

-  ISD 26A, di/dt 390A/µs, VDD V(BR)DSS, TJ  175°C. 

-  Pulse width 300µs; duty cycle  2%. 

-  Coss eff.  is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  This is only applied to TO-220AB package. 

- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 

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IRFB/S/SL38N20DPbF ~~[|~~ 

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1000<br>VGS<br>TOP           15V<br>                   12V<br>                   10V<br>                   8.0V<br>100                    7.0V BA<br>                   6.0V<br>                   5.5V il<br>BOTTOM   5.0V a<br>Panel<br>101 PZgooniamll 5.0V ilil<br>300µs PULSE WIDTH<br>Tj = 25°C<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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100<br>VGS<br>TOP           15V<br>                   12V<br>                   10V<br>                   8.0V<br>                   7.0V =<br>                   6.0V<br>10                    5.5V Ae 5.0V<br>BOTTOM   5.0V “i<br>4<br>Vane<br>1<br>f,<br>300µs PULSE WIDTH<br>Tj = 175°C<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 1** Typical Output Characteristics 

**Fig. 2** Typical Output Characteristics 

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1000.00 3.5 I D = 44A<br>Pe eee<br>3.0 |P|| || || || || ftttft ftft ftft fttl ffsl<br>T = 25°C<br>J  2.5<br>100.00 _——_——_ YT | | | | | ft ft ft | [A<br>—_ TJ = 175 + °C 2.0 |r || | | | | || || |ttttft UYtf ff<br>r | | | | ttt vet<br>1.5 Yr || || || || || eR| vetTE tttt<br>10.00<br>1.0 Ft t |Pret<br>| | tf eept tt t t tt<br>0.5 I+7_ | | | | | [| [| |[ [|<br>V = 15V<br>DS  r | | | | | | tf ft ft tt<br>1.00 300µs PULSE WIDTH 0.0 Ft ttt tt ft ft V GS= 10V<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>5.0 7.0 9.0 11.0 13.0 15.0 °<br>T  , Junction TemperatureJ (    C)<br>VGS, Gate-to-Source Voltage (V)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>)<br><br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig. 3** Typical Transfer Characteristics 

**Fig. 4** Normalized On-Resistance vs. Temperature 

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100000 12<br>VGS  = 0V,       f = 1 MHZ ID= 26A<br>Ciss    = Cgs + Cgd,   Cds    SHORTED V = 160V<br>C   = C 10 DS<br>rss   gd<br>V = 100V<br>C  = C + C DS<br>10000 oss   ds  gd<br>Ela eases<br>8<br>EE rom Ciss Y-wy,<br>1000 6<br>SST PP ey<br>Coss 4<br>ASe<br>100<br>hut Crss Stil eo 2 ae<br>BEiS 0 CEE<br>10<br>1 10 100 1000 0 10 20 30 40 50 60 70<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>Fig 5.  Typical Capacitance vs.   Fig 6.  Typical Gate Charge vs.<br>      Drain-to-Source Voltage       Gate-to-Source Voltage<br>1000<br>1000.00<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.00 T = 175°C 100<br>J<br>100µsec<br>SEpes(i 10<br>10.00<br>1msec<br>T = 25°C<br>J<br>1<br>1.00 [fe EBs<br>10msec<br>Tc = 25°C<br>Tj = 175°C<br>V = 0V<br>GS  Single Pulse<br>ee) 0.1 ee<br>0.10<br>1 10 100 1000<br>0.0 0.5 1.0 1.5 2.0 2.5<br>VDS  , Drain-toSource Voltage (V)<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance(pF)<br>ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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IRFB/S/SL38N20DPbF ~~Lees~~ 

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45<br>40<br>3530 SE<br>25<br>TN<br>20<br>15<br>TN<br>10 T=<br>5 ee<br>0<br>25 50 75 100 125 150 175<br>i<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

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 1 a<br>D = 0.50<br>0.20<br>0.1 vo<br>0.10 See alii nil ll<br>0.05<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) P DM<br>0.01<br>t 1<br>t 2<br>Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + T C<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z          )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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IRFB/S/SL38N20DPbF ~~LLL~~ 

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900<br>I D<br>VK | | TOP 11A<br>15V<br>19A<br>720 ANe| | BOTTOM 26A<br>L DRIVER<br>VDS<br>540 K A | | |<br>R G D.U.T +<br>- [V][DD]<br>\- IAS A 360 INN ee<br>20V<br>E t y p 0.01 ASN<br>180<br>Fig 12a.   Unclamped Inductive Test Circuit  ee Nee<br>SS<br>0<br>25 50 75 100 125 150 175<br>Starting Tj, Junction Temperature (   C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

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IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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IRFB/S/SL38N20DPbF ~~[|~~ 

**Fig 14.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

2016-5-31 

7 

IRFB/S/SL38N20DPbF ~~LLL~~ 

## ~~Cinfineon~~ 

## **TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

E X A M P L E : T H IS IS A N IR F 1 0 1 0 L O T  C O D E 1 7 8 9 A S S E M B L E D O N W W 1 9 , 2 0 0 0 IN T H E A S S E M B L Y  L IN E "C " N o t e :  "P " in a s s e m b ly  lin e p o s it io n in d ic a t e s  "L e a d -  F r e e " 

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P A R T  N U M B E R<br>IN T E R N A T IO N A L<br>R E C T IF IE R<br>L O G O<br>D A T E  C O D E<br>Y E A R  0  =  2 0 0 0<br>A S S E M B L Y<br>W E E K  1 9<br>L O T  C O D E<br>L IN E  C<br>**----- End of picture text -----**<br>


## TO-220AB packages are not recommended for Surface Mount Application. 

## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.infineon.com/product-info/auto/** 

**2. For the most current drawing please refer to Infineon website at http://www.infineon.com/package/** 

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IRFB/S/SL38N20DPbF ~~LLL~~ 

## ~~Cinfineon~~ 

## **D2-Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D2-Pak (TO-263AB) Part Marking Information** 

**==> picture [296 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO TeaR —~<br>DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY<br>LOT CODE WEEK 02<br>LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER F530S<br>LOGO DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY<br>YEAR 0 =  2000<br>LOT CODE H y Hf WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.infineon.com/product-info/auto/ 2. For the most current drawing please refer to Infineon website at http://www.infineon.com/package/** 

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IRFB/S/SL38N20DPbF ~~LLL~~ 

## ~~Cinfineon~~ 

**TO-262 Package Outline** (Dimensions are shown in millimeters (inches) 

## **TO-262 Part Marking Information** 

**==> picture [545 x 244] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>INTERNATIONAL<br>ASSEMBLED ON WW 19, 1997 RECTIFIER<br>IN THE ASSEMBLY LINE "C" LOGO<br>DATE CODE<br>ASSEMBLY YEAR 7 = 1997<br>LOT CODE WEEK 19<br>LINE C<br>il<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER<br>LOGO<br>DATE CODE<br>ASSEMBLY P = DESIGNATES LEAD-FREE<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 = 1997<br>WEEK 19<br>A = ASSEMBLY SITE CODE<br>Notes:<br>1. For an Automotive Qualified version of this part please seehttp://www.infineon.com/product-info/auto/<br>2. For the most current drawing please refer to Infineon website at http://www.infineon.com/package/<br>10  2016-5-31<br>=<br>**----- End of picture text -----**<br>


~~Cinfineon~~ 

IRFB/S/SL38N20DPbF ~~LLL~~ 

**D2-Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [386 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>


**==> picture [71 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
FEED DIRECTION<br>**----- End of picture text -----**<br>


**==> picture [376 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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~~Cinfi~~ 

IRFB/S/SL38N20DPbF ~~Lt~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-220AB|N/A|
||D2-Pak|MSL1<br>(per JEDEC J-STD-020D)††|
||TO-262|N/A|
|**RoHS Compliant**|Yes||



## **RoHS Compliant** 

- Qualification standards can be found at Infineon’s web site www.infneon.com 

- ††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

**Date Comments**  Updated datasheet with corporate template. 5/31/2016  Added disclaimer on last page. 

## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU‐ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI‐POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my‐d™, NovalithIC™, OPTIGA™, 

SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

Edition 2016-04-19 **IMPORTANT NOTICE** ; ; ; , ; , The For further information on the product, technology, **Published by** information given in this document shall in no delivery terms and conditions and prices please event be regarded as a guarantee of conditions or contact your nearest Infineon Technologies office **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”) . (www.infineon.com). **81726 Munich, Germany** With respect to any examples, hints or any typical Please note that this product is not qualified values stated herein and/or any information **© 2016 Infineon Technologies AG.** regarding the application of the product, Infineon according to the AEC Q100 or AEC Q101 documents . ; ; **All Rights Reserved.** Technologies hereby disclaims any and all of the Automotive Electronics Council. warranties and liabilities of any kind, including Do you have a question about this without limitation warranties of non-infringement **WARNINGS document?** of intellectual property rights of any third party. Due to technical requirements products may **Email:** erratum@infineon.com contain dangerous substances. For information on In addition, any information given in this document __the types in question please contact your nearest **is subject to customer’s compliance with its** Infineon Technologies office. obligations stated in this document and any **Document reference** applicable legal requirements, norms and Except as otherwise explicitly approved by Infineon Technologies in a written document signed by **ifx1** standards concerning customer’s products and any authorized representatives of Infineon Technologies, use of the product of Infineon Technologies in **Infineon Technologies’ products may** not be used in customer’s applications. any applications where a failure of the product or any consequences of the use thereof can reasonably The data contained in this document is exclusively be expected to result in personal injury. intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the 

12 

2016-5-31 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFB38N20DPBF/power-mosfet-n-channel-200-v-44-a-0054-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfb38n20dpbf/mosfet-n-200v-44a-to-220/dp/8657955)
---

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