# Power MOSFET, N Channel, 60 V, 75 A, 2700 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2781123/)

**URL**: https://novapart.co/products/IRFB3256PBF/power-mosfet-n-channel-60-v-75-a-2700-ohm-to-220ab
**SKU**: IRFB3256PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.6200
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 75A |
| Drain Source On State Resistance | 2700µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781123/)

## IRFB3256PbF 

HEXFET ® Power MOSFET 

## **Applications** 

High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits 

|||||HEXFET<br>Power MOSFET<br>®|Power MOSFET|
|---|---|---|---|---|---|
|||D||**VDSS**|**60V**|
|G||S||**RDS(on)   typ.**<br>**max.**<br>**ID (Silicon Limited)**<br>**ID (Package Limited)**|**2.7m**Ω<br>**3.4m**Ω<br>**206A**<br>**75A**|



## **Benefits** 

Improved  Gate, Avalanche and Dynamic  dV/dt Ruggedness 

Fully Characterized Capacitance and Avalanche SOA 

Enhanced body diode dV/dt and dI/dt Capability Lead-Free 

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D<br>S<br>D<br>G<br>TO-220AB<br>**----- End of picture text -----**<br>


|**G**|**D**|**S**|
|---|---|---|
|Gate|Drain|Source|



Gate 

## **Absolute Maximum Ratings** 

||**Symbol**|**Parameter**<br>**Units**<br>**Max.**|
|---|---|---|
|ID @ TC = 25°C<br>ID @ TC = 100°C<br>ID @ TC = 25°C<br>IDM<br>PD @TC = 25°C||Continuous Drain Current, VGS @ 10V(Package Limited)<br>Pulsed Drain Current<br>Maximum Power Dissipation<br>W<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>206<br>172<br>820<br>75<br>A<br>300<br>~~a~~<br>~~e~~~~**e** ee~~<br>~~a~~<br>~~O~~<br>~~a~~|
|||Linear DeratingFactor<br>W/°C<br>2.0<br>~~a~~|
|VGS||Gate-to-Source Voltage<br>V<br>± 20<br>~~ho,~~|
|dv/dt<br>TJ<br>TSTG||Peak Diode Recovery<br>V/ns<br>Operating Junction and<br>Storage Temperature Range<br>SolderingTemperature,for 10 seconds<br>Mountingtorque,6-32 or M3 screw<br>-55  to + 175<br>°C<br>300(1.6mm from case)<br>3.3<br>10lbf n(1.1N m)<br>~~en~~<br>~~eee~~<br>~~ID~~<br>~~I~~|
|**Avalanche Characteristics**<br>EAS<br>Single Pulse Avalanche Energy (Thermally Limited)<br>mJ<br>IAR<br>Avalanche Current<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>340<br>See Fig. 14, 15, 22a, 22b<br>~~TTT~~<br>~~OO~~|||
|**Thermal Resistance**<br>**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJC<br>Junction-to-Case<br>–––<br>0.50<br>°C/W<br>~~Le~~<br>~~ee~~<br>~~TO~~|||
|RθCS||Case-to-Sink,Flat Greased Surface<br>0.50<br>–––<br>~~LO~~|
|RθJA||Junction-to-Ambient<br>–––<br>62<br>~~a~~|



www.irf.com 

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09/22/11 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>V(BR)DSS<br>ΔV(BR)DSS/ΔTJ<br>RDS(on)<br>VGS(th)<br>gfs|**Parameter**<br>**Min. Typ. Max. Units**<br>Drain-to-Source Breakdown Voltage<br>60<br>–––<br>–––<br>V<br>Breakdown Voltage Temp. Coefficient<br>–––<br>29<br>–––<br>mV/°C<br>Static Drain-to-Source On-Resistance<br>–––<br>2.7<br>3.4<br>mΩ<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>Forward Transconductance<br>88<br>–––<br>–––<br>S<br>**Conditions**<br>VGS= 0V, ID= 250μA<br>Reference to 25°C, ID= 1.0mA<br>VGS= 10V, ID= 75A<br>VDS= VGS, ID= 150μA<br>VDS= 25V, ID= 75A<br>~~QO~~<br>~~GO~~<br>~~QO (OR~~<br>~~eG~~<br>~~QO~~<br>~~a~~<br>~~Ge GO~~<br>~~QO~~<br>~~GD~~<br>~~QO OO~~<br>~~©~~<br>~~a~~<br>~~Gn GO QO~~<br>~~a~~<br>~~GOQO~~|**Parameter**<br>**Min. Typ. Max. Units**<br>Drain-to-Source Breakdown Voltage<br>60<br>–––<br>–––<br>V<br>Breakdown Voltage Temp. Coefficient<br>–––<br>29<br>–––<br>mV/°C<br>Static Drain-to-Source On-Resistance<br>–––<br>2.7<br>3.4<br>mΩ<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>Forward Transconductance<br>88<br>–––<br>–––<br>S<br>**Conditions**<br>VGS= 0V, ID= 250μA<br>Reference to 25°C, ID= 1.0mA<br>VGS= 10V, ID= 75A<br>VDS= VGS, ID= 150μA<br>VDS= 25V, ID= 75A<br>~~QO~~<br>~~GO~~<br>~~QO (OR~~<br>~~eG~~<br>~~QO~~<br>~~a~~<br>~~Ge GO~~<br>~~QO~~<br>~~GD~~<br>~~QO OO~~<br>~~©~~<br>~~a~~<br>~~Gn GO QO~~<br>~~a~~<br>~~GOQO~~|
|---|---|---|
|RG<br>IDSS|Internal Gate Resistance<br>–––<br>0.79<br>–––<br>Ω<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>μA<br>VDS= 60V, VGS= 0V<br>~~a~~<br>~~Gs GQ~~||
|–––<br>–––<br>250<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>**Dynamic @ TJ = 25°C (unless otherwise specified)**<br>VDS= 60V, VGS= 0V, TJ= 125°C<br>VGS= 20V<br>VGS= -20V<br>~~aes~~<br>~~SS~~<br>~~ee~~<br>~~DGG GG~~|||
|**Symbol**|**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**||
|Qg|Total Gate Charge<br>–––<br>130<br>195<br>nC<br>ID= 75A<br>~~Re~~||
|Qgs|Gate-to-Source Charge<br>–––<br>31<br>–––<br>VDS= 30V<br>~~ee~~||
|Qgd|Gate-to-Drain("Miller")Charge<br>–––<br>42<br>–––<br>VGS= 10V<br>~~a~~<br>@||
|Qsync|Total Gate Charge Sync. (Qg- Qgd)<br>–––<br>88<br>–––<br>ID= 75A, VDS=0V, VGS= 10V<br>~~GOO GG~~||
|td(on)|Turn-On DelayTime<br>–––<br>22<br>–––<br>ns<br>VDD= 39V<br>~~ee~~||
|tr|Rise Time<br>–––<br>77<br>–––<br>ID= 75A<br>~~ee~~||
|td(off)|Turn-Off DelayTime<br>–––<br>55<br>–––<br>RG= 2.7Ω<br>~~es~~||
|tf<br>Ciss|Fall Time<br>–––<br>64<br>–––<br>Input Capacitance<br>–––<br>6600<br>–––<br>pF<br>VGS= 10V<br>VGS= 0V<br>~~ee~~<br>~~@~~<br>~~a~~||
|Coss|Output Capacitance<br>–––<br>720<br>–––<br>VDS= 48V<br>~~a~~||
|Crss|Reverse Transfer Capacitance<br>–––<br>400<br>–––<br>ƒ= 1.0 MHz,  See Fig. 5<br>~~a~~||
|Coss eff.(ER)<br>Coss eff.(TR)|Effective Output Capacitance(EnergyRelated)<br>–––<br>1080<br>–––<br>Effective Output Capacitance(Time Related)<br>–––<br>1400<br>–––<br>VGS= 0V, VDS= 0V to 48V<br>See Fig. 11<br>VGS= 0V, VDS= 0V to 48V<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|**Diode Characteristics**|||
|**Symbol**|**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**||
|IS<br>ISM<br>VSD<br>trr<br>Qrr<br>IRRM<br>ton|S<br>D<br>G<br>Continuous Source Current<br>–––<br>–––<br>206<br>A<br>(BodyDiode)<br>Pulsed Source Current<br>–––<br>–––<br>820<br>A<br>(BodyDiode)<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>Reverse Recovery Time<br>–––<br>43<br>–––<br>ns<br>TJ = 25°C<br>VR= 51V,<br>–––<br>53<br>–––<br>TJ = 125°C<br>IF= 75A<br>Reverse Recovery Charge<br>–––<br>58<br>–––<br>nC<br>TJ = 25°C<br>di/dt = 100A/μs<br>–––<br>65<br>–––<br>TJ = 125°C<br>Reverse RecoveryCurrent<br>–––<br>2.4<br>–––<br>A<br>TJ = 25°C<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>MOSFET symbol<br>showing  the<br>TJ= 25°C, IS= 75A, VGS= 0V<br>integral reverse<br>p-njunction diode.<br>~~ee eee~~<br>~~ee~~<br>~~Gs QO~~<br>~~ee ee~~<br>~~||~~<br>~~**e**e oe~~<br>~~||~~<br>~~e~~<br>~~a~~||



Notes: ® Repetitive rating;  pulse width limited by max. junction © Coss eff. (ER) is a fixed capacitance that gives the same energy asoss eff. (ER) is a fixed capacitance that gives the same energy as eff. (ER) is a fixed capacitance that gives the same energy as temperature. Coss while VDS is rising from 0 to 80% VDSS. while VDS is rising from 0 to 80% VDSS. 

© Coss eff. (ER) is a fixed capacitance that gives the same energy asoss eff. (ER) is a fixed capacitance that gives the same energy as eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

@ Limited by TJmax, starting TJ = 25°C, L = 0.12mH @ R 

θ 

RG = 50 Ω , IAS = 75A, VGS =10V. Part not recommended for use above this value. 

θ JC 

ISD ≤ 75A, di/dt ≤ 890A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. 

Pulse width ≤ 400μs; duty cycle ≤ 2%. 

Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

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1000<br>VGS<br>TOP           15V<br>12V<br>10V PE) Zo ||<br>6.0V<br>5.0V ai) ate<br>4.75V<br>100 4.50V<br>BOTTOM 4.25V<br>anni 7 <ai> A<br>4.25V<br>10<br>My<br>HyPP / #40 fyee ell<br>≤ 60μs PULSE WIDTH<br>Tj = 25°C<br>1 Ye t/ | |<br>0.01 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000 ——<br>100<br>T = 175°C<br>J<br>la<br>SS<br>TJ = 25°C<br>10<br>ify<br>eeey ee | ee ee ee<br>a| V DS  = 25V —<br>≤ 60μs PULSE WIDTH<br>1.0 | ef<br>2 3 4 5 6 7<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics<br>100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>= C rss    = C gd<br>C = C + C<br>a oss   ds  gd<br>10000 Ciss<br>_-<br>Coss<br>et Crss el<br>1000<br>Siti ml<br>a<br>ee<br>100 P| Tu FEEL<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           15V<br>12V<br>10V PU errr TT<br>6.0V<br>5.0V sii ail eat<br>4.75V<br>100 4.50V<br>BOTTOM 4.25V<br>4.25V<br>Seni7 Att on<br>10<br>OE? 40<br>Sb”Ey AD [sileeeeeeits] eae amet ennai<br>≤ 60μs PULSE WIDTH<br>Tj = 175°C<br>1 7 APo oe aLLM<br>0.01 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.2<br>ID = 75A<br>2.0 V GS  = 10V PELLET ELD<br>1.8<br>1.6<br>EEE<br>1.4 PLL EEL TLL YHEL<br>1.2<br>He4<br>1.0<br>0.8 PELELEE<br>0.6 ALLLa LLL LLL<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Junction Temperature (°C)<br>Fig 4.   Normalized On-Resistance vs. Temperature<br>14.0<br>ID= 75A<br>12.0 Coe<br>VDS= 48V<br>10.0 aa V DS = 30V S|<br>VDS= 12V<br>Seen, Ze<br>8.0<br>6.0<br>Yy<br>cae” Zn00n<br>4.02.0 PALE ZT  TTP ELE<br>0.0<br>0 20 40 60 80 100 120 140 160 180<br> QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>TJ = 175°C<br>100<br>TJ = 25°C<br>10<br>V GS  = 0V<br>1.0 pipe<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS (on)<br>1000<br>100μsec<br>1msec<br>100<br>10<br>10msec<br>DC<br>1 Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1 |<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>72<br>ID = 1.0mA<br>70 ELL<br>68<br>Too<br>66<br>HERR<br>64<br>Z<br>62<br>POZA RRnn ERE ERE<br>60 ALLELE<br>-60 -40 -20 0 20 40 60 80 100120140160180120140160180140160180160180180<br>TJ , Temperature ( °C )<br>Fig 10.   Drain-to-Source Breakdown Voltage<br>ID,  Drain-to-Source Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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250 72<br>ID = 1.0mA<br>200 | | Limited by package 70 ELL<br>68<br>a Too<br>150<br>66<br>100<br>| HERR<br>64<br>PZ EN Z<br>50<br>62<br>a POZA RRnn ERE ERE<br>0 LL ELLA 60 ALLELE<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100120140160180120140160180140160180160180180<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Drain-to-Source Breakdown Voltage<br>Case Temperature<br>2.0 1400<br>ID<br>1.8<br>1200 TOP         12A<br>1.6 24A<br>1.4 ee 1000 \ BOTTOM 75A<br>1.2 7, ke<br>800<br>1.0 pt tt tA INE EEL<br>0.80.6 eenn Amaae 600400 KEEALPANNE STN  EEL<br>0.4<br>200<br>0.2 Pf ROSS<br>0.0 PT TD 0 PEL)Pe SSN<br>0 10 20 30 40 50 60 70 25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>VDS, Drain-to-Source Voltage (V)<br>Energy (μJ)<br>ID,  Drain Current (A)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Typical COSS Stored Energy 

**Fig 12.** Maximum Avalanche Energy vs. DrainCurrent 

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1<br>D = 0.50 ae en oo<br>0.1 0.20 eeantl | |<br>0.10<br>0.05 a ee a a ee<br>0.02<br>0.01<br>eae<br>0.01<br>a Oo | Oe | | |<br>0.001 wai SINGLE PULSE Ceea en el<br>( THERMAL RESPONSE )<br>Notes:<br>ean ee ee ee 1. Duty Factor D = t1/t2 il<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 PIE I I = il<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>a eee | es se ee |<br>i 0 Duty Cycle = Single Pulse 00 0 |<br>Allowed avalanche Current vs avalanche<br>er ee eh eee pulsewidth, tav, assuming  Δ Tj = 150°C and  nae<br>Tstart =25°C (Single Pulse)<br>100 | ee Hill<br>a ee ee 0.01 A. 7 WNL Oreo<br>pt ft tT 7 NAL er NH + 4 $$<br>0.05<br>10 | 0.10 OESee PERUTTS TTI TTT<br>pA SSeV<br>|_|PS Allowed avalanche Current vs avalanche  SIEGEreSSEee ee ee ee<br>pulsewidth, tav, assuming  ΔΤ j = 25°C and<br>1 Eee Tstart = 150°C. | EE |, Ch Ht-'<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14.   Typical Avalanche Current vs.Pulsewidth<br>400 Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1.0% Duty Cycle 1. Avalanche failures assumption:<br>ID = 75A Purely a thermal phenomenon and failure occurs at a temperature far in<br>300 excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded.<br>3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.<br>4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse.<br>200 NO 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase<br>during avalanche).<br>6. Iav = Allowable avalanche current.<br>7.  Δ T = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as<br>LA N WOTNE LE 25°C in Figure 14, 15).<br>100<br>tav = Average time in avalanche.<br>D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 13)<br>SS BESNC<br>0<br>PD (ave) = 1/2 ( 1.3·BV·Iav) = A T/ ZthJC<br>25 50 75 100 125 150 175 Iav = 2 A T/ [1.3·BV·Zth]<br>Starting TJ , Junction Temperature (°C) EAS (AR) = PD (ave)·tav<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 

4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. Δ T = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as 25°C in Figure 14, 15). 

**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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4.0<br>3.5<br>Sane<br>3.0<br>Sa<br>2.5<br>| Base<br>2.0<br>ID = 150μA AARNN |<br>ID = 1.0mA<br>1.5<br>ID = 1.0A ao | NN<br>| TN<br>1.0<br>/<br>0.5<br>| | | | ft<br>-75 -25 25 75 125 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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16<br>IF = 30A<br>14 V R  = 51V<br>| ||e<br>TJ = 25°C<br>12<br>TJ = 125°C |<br>10<br>|<br>8<br>P| ly) |<br>6<br>LA<br>YY<br>4<br>|<br>2<br>7] | | |<br>0 200 400 600 800 1000<br>diF /dt (A/μs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Threshold Voltage vs. Temperature 

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16<br>IF = 45A<br>14 V R  = 51V Te<br>TJ = 25°C<br>12<br>TJ = 125°C<br>et<br>10<br>| | ke<br>8<br>beat |<br>6<br>A<br>4<br>|| |<br>A<br>2<br>0 200 400 600 800 1000<br>diF /dt (A/μs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


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500<br>IF = 30A<br>VR = 51V TT,<br>400<br>TJ = 25°C<br>TJ = 125°C<br>Te<br>300<br>ra<br>200<br>aan<br>Cert<br>100<br>Tt]<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/μs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


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500<br>IF = 45A<br>VR = 51V<br>400<br>TJ = 25°C<br>TJ = 125°C<br>300<br>200<br>Be 4nn<br>100<br>0<br>0 PP 200 [TT] 400 600 800 1000<br>diF /dt (A/μs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + { P.W. + Period ——— — D = —— Period<br>VGS=10<br>)    •  | t<br>p— ©) - Circuit  •  •   GroundLow Layout Leakage lane ConsiderationsInductance @ D.U.T. ISD Waveform t<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [1] Current Transformer - ® + Current r Current di/dt AN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 we VDD<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re (A •   dv/dt controlled by Rg Vp p - =<br>•<br>D.U.T. - Device Under Test SCO |<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" @\ t<br>* Vg = 5V for Logic Level Devices<br>Fig 21.  Peak Diode Recovery dv/dt Test Circuit for N-Channel<br>HEXFET ® Power MOSFETs<br>V(BR)DSS<br>15V << tp -—><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>¢ 2V0VGS dt<br>tp 0.01 Ω IAS<br>**----- End of picture text -----**<br>


**Fig 22a.** Unclamped Inductive Test Circuit 

**Fig 22b.** Unclamped Inductive Waveforms 

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+<br>-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig 23a.   Switching Time Test Circuit<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>| 50K Ω<br>! 12V .2 μ F |<br>| .3 μ F |<br>~LLii 7): +<br>D.U.T. -VDS<br>VGS<br>3mA<br>W IG A N ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 24a.** Gate Charge Test Circuit 

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VDS<br>90%<br>\<br>10% /\<br>VGS |a r e | |<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


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Fig 23b.   Switching Time Waveforms<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>fl Vgs<br>i{<br>!<br>Vgs(th)<br>‘e g pl a p l e w i e » !<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 24b.** Gate Charge Waveform 

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TO-220AB packages are not recommended for Surface Mount Application. 

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## **Qualification information**[†] 

|**Qualification information**[†]|||
|---|---|---|
|Qualification level|Consumer<br>††<br>(per JEDEC JES D47F<br>†††guidelines)||
|Moisture Sensitivity Level|TSOP-6|MS L1<br>(per IPC/JEDEC J-S T D-020D<br>†††)|
|RoHS compliant|Yes||



- Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability 

†† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ 

††† Applicable version of JEDEC standard at the time of product release. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2011 

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9 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFB3256PBF/power-mosfet-n-channel-60-v-75-a-2700-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfb3256pbf/mosfet-n-ch-60v-75a-to-220ab/dp/2781123)
---

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