# Power MOSFET, N Channel, 200 V, 31 A, 0.082 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8648751/)

**URL**: https://novapart.co/products/IRFB31N20DPBF/power-mosfet-n-channel-200-v-31-a-0082-ohm-to
**SKU**: IRFB31N20DPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3600
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 200W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.082ohm |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 31A |
| Drain Source On State Resistance | 0.082ohm |
| Gate Source Threshold Voltage Max | 5.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8648751/)

## **MOSFET** 

## **Applications** 

High Frequency DC-DC converters Lead-Free 

## HEXFET ® Power MOSFET 

||HEXFET<br>Power MOSFET<br>®|Power MOSFET|
|---|---|---|
|**VDSS**|**RDS(on) max**|**ID**|
|**200V**|**0.082**Ω|**31A**|



Low Gate to Drain to Reduce Switching Losses 

Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) 

Fully Characterized Avalanche Voltage and Current 

TO-220AB D[2] Pak TO-262 IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbF 

**Parameter Max. Units** ~~ee a~~ ID @ TC = 25°C ~~a~~ Continuous Drain Current, VGS @ 10V 31 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A IDM Pulsed Drain Current 124 ~~———a~~ PD @TA = 25°C Power Dissipation ~~ae~~ 3.1 W PD @TC = 25°C Power Dissipation 200 ~~a a~~ Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 30 V ~~OO~~ dv/dt ~~a~~ Peak Diode Recovery dv/dt 2.1 V/ns TJ Operating Junction and -55  to + 175 ~~es~~ TSTG Storage Temperature Range °C es ~~ee~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) a Mounting  torqe,  6-32  or M3  screw = 10 lbf•in (1.1N•m) 

Telecom 48V Input DC/DC Active Clamp Reset Forward Converter 

Notes (0) through © are  on page 11 

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## IRFB/S/SL31N20DPbF 

## **Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>rs|**Parameter**<br>rs|**Min.**<br>rs<br>~~rrr~~<br>~~ss~~|**Typ. **<br>rs<br>~~rs ee~~<br>~~ss~~|**Max. **<br>rs<br>~~ee~~|**Max. **<br>rs<br>~~ee~~|**Units**<br>rs<br>~~ee~~|**Conditions**<br>rs|**Conditions**<br>rs|**Conditions**<br>rs|
|---|---|---|---|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~||200<br>~~rrr~~<br>~~es~~<br>~~ss~~|–––<br>~~rs ee~~<br>~~es~~<br>~~ss~~|–––<br>~~ee~~<br>~~es~~||V<br>~~ee~~<br>~~es~~|VGS= 0V, ID= 250µA<br>~~es~~|||
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~ee~~||–––<br>~~ss~~<br>~~ee~~<br>~~rs~~|0.25<br>~~ss~~<br>~~ee~~<br>~~rsse~~|–––<br>~~ee~~<br>~~se~~||V/°C<br>~~ee~~|Reference to 25°C, ID= 1mA<br>~~ee~~|||
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~ee~~||–––<br>~~ee~~<br>~~rs~~|––– <br>~~ee~~<br>~~rsse~~|0.082<br>~~ee~~<br>~~se~~||Ω<br>~~ee~~|VGS= 10V, ID= 18A<br>~~ee~~|||
|VGS(th)|Gate Threshold Voltage<br>~~eG~~||3.0<br>~~rs~~<br>~~eG~~|–––<br>~~rs se~~<br>~~eG~~|5.5<br>~~se~~<br>~~eG~~||V<br>~~eG~~|VDS= VGS, ID= 250µA<br>~~eG~~|||
|IDSS|Drain-to-Source Leakage Current<br>~~eee~~<br>~~Re~~||–––<br>~~eee~~<br>~~|~~|–––<br>~~eee~~<br>~~|~~|25<br>~~eee~~<br>||µA<br>~~eee~~<br>~~|~~<br>~~PO~~|VDS= 200V, VGS= 0V<br>VDS= 160V, VGS= 0V, TJ= 150°C<br>~~eee~~<br>~~PO~~|||
||||–––<br>~~eee~~<br>~~|~~|–––<br>~~eee~~<br>~~||~~|250<br>~~eee~~<br>~~|~~||||||
|IGSS|Gate-to-Source Forward Leakage<br>~~Re~~||–––<br>~~|~~|–––<br>~~||~~|100<br>~~|~~||nA<br>~~|~~<br>~~PO~~|VGS= 30V<br>~~PO~~|||
||Gate-to-Source Reverse Leakage<br>~~Re~~||–––<br>|–––<br>~~|~~|-100<br>~~|~~|||VGS= -30V<br>~~PO~~|||
|**Dynamic @ TJ = 25°C (unless otherwise specified)**<br>~~eeeeee~~|||||||||||
||**Parameter**<br>e~~e~~||**Min.**<br>~~e~~<br>~~ee~~|**Typ. **<br>~~e~~<br>~~ee~~|**Max.**<br>~~e~~<br>~~ee~~||**Units**<br>~~e~~|**Conditions**|||
|gfs<br>ER|Forward Transconductance<br>~~PO—SY~~<br>ER||17<br>~~ee ~~<br>~~PO—SY~~<br>|–––<br> ~~ee ~~<br>~~PO—SY~~<br>|–––<br> ~~ee~~<br>~~PO—SY~~<br>||S<br>~~PO—SY~~|VDS= 50V, ID= 18A|||
|Qg<br>ER|Total Gate Charge<br>ER<br>~~ee~~||–––<br><br>~~es~~|70<br><br>~~ee~~|107<br>||nC|ID= 18A<br>VDS= 160V<br>VGS= 10V<br>~~@~~|||
|Qgs<br>ER|Gate-to-Source Charge<br>ER~~ee~~<br>~~ee~~||–––<br>~~ee~~<br>~~es~~|18<br>~~ee~~<br>~~ee~~|23<br>~~ee~~||||||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~||–––<br>~~es~~|33<br>~~ee~~|65||||||
|td(on)<br>~~es~~|Turn-On Delay Time<br>~~ee~~<br>~~a~~||–––<br>~~es ~~<br>~~a~~|16<br> ~~ee~~<br>~~a~~|–––<br>~~a~~||ns|VDD= 100V<br>ID= 18A<br>RG= 2.5Ω<br>RD= 5.4Ω,<br>~~@~~<br>~~°~~|||
|tr<br>~~es~~<br>ee<br>~~yp~~|Rise Time<br>~~a~~<br>~~ee~~<br>~~yp~~||–––<br>~~a~~<br>~~ee~~<br>~~ee~~|38<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~||||||
|td(off)<br>~~es~~<br>ee<br>~~yp~~|Turn-Off Delay Time<br>~~a~~<br>~~ee~~<br>~~yp~~||–––<br>~~a~~<br>~~ee~~<br>~~ee~~|26<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~||||||
|tf<br>ee<br>~~yp~~<br>~~a~~<br>~~ee~~|Fall Time<br>~~ee~~<br>~~yp~~<br>~~a~~||–––<br>~~ee~~<br>~~ee~~|10<br>~~ee~~|–––<br>~~ee~~||||||
|Ciss<br>~~yp~~<br>~~a~~<br>~~ee~~|Input Capacitance<br>~~yp~~<br>~~a~~||–––<br>~~ee~~|2370|–––||pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz<br>~~°~~|||
|Coss<br>~~yp~~<br>~~a~~<br>~~ee~~<br>a|Output Capacitance<br>~~yp~~<br>~~a~~||–––<br>~~ee~~|390|–––||||||
|Crss<br>~~a~~<br>~~ee~~<br>a<br>a|Reverse Transfer Capacitance<br>~~a~~||–––|78|–––||||||
|Coss<br>a<br>a|Output Capacitance||–––|2860|–––|||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz|||
|Coss<br>a<br>a|Output Capacitance||–––|150|–––|||VGS= 0V,  VDS= 160V,  ƒ = 1.0MHz|||
|Cosseff.|Effective Output Capacitance||–––|170|–––|||VGS= 0V, VDS= 0V to 160V<br>=|||
|**Avalanche Characteristics**|||||||||||
|es<br>es||**Parameter**<br>es||||**Typ.**<br>es|||**Max.**<br>es|**Units**<br>es|
|EAS<br>es<br>**ee**||Single Pulse Avalanche Energy||||–––|||420|mJ|
|IAR<br>es<br>**ee**||Avalanche Current<br>©||||–––|||18|A|
|EAR<br>**ee**||Repetitive Avalanche Energy<br>©||||–––|||20|mJ|



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## IRFB/S/SL31N20DPbF 

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 1000 VGS  1000 VGS<br>TOP 15V TOP 15V<br>12V 12V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br> 100 6.5V6.0V 6.5V6.0V<br>BOTTOM 5.5V BOTTOM 5.5V<br> 100<br>dog imal madi<br> 10<br>A yo<br> 10<br> 1 5.5V<br>Aa) seen eel Samal)Ame ————iiil<br>Gs | — gti<br>0.1 AtteYT 5.5V 20µs PULSE WIDTHT  = 25J °C  1 A 4 | 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 3.0<br>ID = 30A<br>============ T TL<br>SSS SSS See = 2.5 P oeWy<br> 100<br>°<br>ne a T  = 175  CJJ on 2.0 Pee APA<br>lA<br> 10 1.5<br>Srtrt A T  = 25  CJJ ° SSeeee 1.0 PEEpzp24 EEE EE<br> 1<br>0.5<br>=. = = V      = 50VDSDS = FETT<br>0.1 FFEEFEE CC E 20µs PULSE WIDTH E|| 0.0 PCE EEE VGS = 10V<br>5 6 7 8 9 10 11 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GSGS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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 1000 ============<br>SSS SSS See =<br> 100<br>°<br>ne on<br>a T  = 175  CJJ<br> 10<br>°<br>Srtrt A T  = 25  CJJ SSeeee<br> 1<br>=. = = V      = 50VDSDS =<br>0.1 FFEEFEE CC E 20µs PULSE WIDTH E||<br>5 6 7 8 9 10 11<br>V     , Gate-to-Source Voltage (V)GSGS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRFB/S/SL31N20DPbF 

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20<br>VGS   = 0V,       f = 1 MHZGS   = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ ID = 18A<br>Ciss    = Cgs + Cgd,   Cds    SHORTEDiss    = Cgs + Cgd,   Cds    SHORTED   = Cgs + Cgd,   Cds    SHORTEDgs + Cgd,   Cds    SHORTED+ Cgd,   Cds    SHORTEDgd,   Cds    SHORTED,   Cds    SHORTEDds    SHORTED   SHORTED VDS = 160V<br>PH CCrss    = C = Cgd + CCrss    = C = Cgd + Crss    = C = Cgd + C  = C = Cgd + C = Cgd + Cgd + C+ C 16 PT ttf VVDSDS == 100V 40V |<br>10000 oss   ds  gd<br>m l PTTL ay |<br>e e ee ee Y ||<br>Ciss 12<br>egg tt a Hitt tlt“<br>1000<br>eeeee eee Coss een 8 44<br>100 P A ———<br>eeenaali| Geman Crss lllimmen nati nati 4 A | | td<br>FOR TEST CIRCUIT<br>10 SE Znnna SEE FIGURE       13<br>0<br>1 10 100 1000 0 20 40 60 80 100<br>VDS, Drain-to-Source Voltage (V) Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>SS =a tite<br> 100 , | | | | | | | |i WN<br>SS SS SS  100 Aee e l<br>T  = 175  CJ ° 10us<br> 10 a 4 4A Seah eesti eee<br>100us<br>=== = = SS LIS I<br>EES AES T  = 25  CJ °  10 A |<br> 1 1ms<br>ee a eee PT TTT<br> T TCJ = 25  C= 175  C° ° 10ms<br>0.1 Area aa e e eee V      = 0 V GS eee e e  1 a  Single Pulse lll Hil<br>0.2 0.4 0.6 0.8 1.0 1.2  1  10  100  1000<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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100000<br>VGS   = 0V,       f = 1 MHZGS   = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ<br>PH Ciss    = Cgs + Cgd,   Cds    SHORTEDiss    = Cgs + Cgd,   Cds    SHORTED   = Cgs + Cgd,   Cds    SHORTEDgs + Cgd,   Cds    SHORTED+ Cgd,   Cds    SHORTEDgd,   Cds    SHORTED,   Cds    SHORTEDds    SHORTED   SHORTED<br>CCrss    = C = Cgd + CCrss    = C = Cgd + Crss    = C = Cgd + C  = C = Cgd + C = Cgd + Cgd + C+ C<br>10000 oss   ds  gd<br>m l<br>e e ee ee<br>Ciss<br>egg tt a<br>1000<br>eeeee eee Coss een<br>100 P A<br>Crss<br>eeenaali| Geman lllimmen nati nati<br>10 SE<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## IRFB/S/SL31N20DPbF 

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30 PA TE EE EEE Vos Rp<br>25 CPSEEEPE EEE ves Tour<br>20 PiPt tTtT TTANIE ETTE TTET Re a f : —_ - Vo<br>Pit EEE ENE EET tov<br>15 Ft tT] ttt | NEL Pulse Width ≤ 1  ys<br>TIN} ≤ 0.1 %<br>10 Fig 10a.   Switching Time Test Circuit<br>PEt N t<br>5 PT ettEEE ee TE EETT VDS<br>90%<br>Pitt ttt tty yy /<br>0 Fi tt tt} | | tt lf |<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)° |<br>10%<br>VGS |<br>\« p< >! «+ s ><br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 1 a<br>eB<br>D = 0.50 [ses] a [act][geet]<br>Sees P e|__| [ail] | ae nn eet<br>PT LE OemA EE<br>0.20<br>—_——— aA<br>0 ee<br>0.1 0.10<br>= GP<br>| —=ED PDM<br>0.05<br>| | t1<br>= [=][e]<br>0.02 SINGLE PULSE t2<br>|| 0.01 (THERMAL RESPONSE)<br>Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRFB/S/SL31N20DPbF 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br><<br>20V<br>Lose tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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_ tp V(BR)DSS<br>al<br>a<br>IAS<br>**----- End of picture text -----**<br>


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1000<br>ID<br>Pitt<br>TOP 7.3A<br>15A<br>800 NESE EEE BOTTOM 18A<br>BNE<br>PINE E<br>600<br>400 PEINEE Ey<br>No NO<br>SSN<br>200 PSA NP<br>SSS<br>Pit tL |SL<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>QGS QGD<br>oo,<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>~LLit7): D.U.T. +-VDS<br>VGS<br>3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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## IRFB/S/SL31N20DPbF 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ) Current ==<br>Ty) di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  ae Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® Power MOSFETs 

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## IRFB/S/SL31N20DPbF 

Dimensions are shown in millimeters (inches) 

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10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>| g 1.22 (.048)<br>6.47 (.255)<br>4 6.10 (.240)<br>maey CO =<br>15.24 (.600)<br>14.84 (.584)<br>LEAD ASSIGNMENTS<br>1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE  IGBTs, CoPACK<br>ar 1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>| a 3- SOURCE4- DRAIN       4 - DRAIN 3- EMITTER4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>3X (ip [1.40 (.055)] 1.15 (.045) 0.36  (.014)        M    B   A   M _ 2.92 (.115)<br>2.64 (.104)<br>a, 2.54 (.100) | T<br>2X<br>**----- End of picture text -----**<br>


NOTES: 

- 1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 

- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

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EXAMPLE: T HIS  IS  AN IRF 1010<br>LOT  CODE 1789<br>AS S EMB LED ON WW 19, 1997 INTE RNAT IONAL PART  NUMBER<br>IN THE AS S EMBLY LINE "C" RECT IFIER<br>LOGO<br>Note:   "P" in assembly line<br>position indicates "Lead-Free" DAT E CODE<br>YEAR 7 =  1997<br>AS S EMBLY<br>LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


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## IRFB/S/SL31N20DPbF 

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Dimensions are shown in millimeters (inches)<br>**----- End of picture text -----**<br>


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T H IS  IS  AN  IR F 5 30 S  W IT H P AR T  N U M B E R<br>L OT  COD E  80 2 4 IN T E R N AT ION AL SY<br>AS S E M B L E D  ON  W W  0 2, 20 00 R E CT IF IE R F 5 30 S<br>IN  T H E  AS S E M B L Y  L IN E  "L " L OGO TéaR 002i<br>pos ition indicates  "L ead-F ree"N ote: "P " in as s embly line ASL OT  COD ES E MB L Y 80i? WU O 7a24 D AT E  COD EYE AR  0 =W E E K  02  20 00<br>L IN E  L<br>**----- End of picture text -----**<br>


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P AR T  N U MB E R<br>IN T E R N AT ION AL i<br>R E CT IF IE R F 530S<br>L OGO IeaRPoo2A<br>80 24 D AT E  COD E<br>P  =  D E S IGN AT E S  L E AD -F R E E<br>AS S E MB L Y cog<br>P R OD U CT  (OP T ION AL )<br>L OT  COD E V?D 70 YE AR  0 =  2000<br>W E E K  02<br>A =  AS S E MB L Y S IT E  COD E<br>**----- End of picture text -----**<br>


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## IRFB/S/SL31N20DPbF 

## TO-262 Package Outline 

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IGBT<br>1-  GAT E<br>2- COLLECTOR<br>3- EMITTER<br>**----- End of picture text -----**<br>


## TO-262 Part Marking Information 

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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997 INTERNATIONAL —S<br>IN THE ASSEMBLY LINE "C" RECTIFIERLOGO IORIRL3103L719¢<br>Note: "P" in assembly line 1789 DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER IRL3103L<br>LOGO TORP7I9A<br>DATE CODE<br>1789<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


www.irf.com 

10 

## IRFB/S/SL31N20DPbF 

## D[2] Pak Tape & Reel Infomation 

Dimensions are shown in millimeters (inches) 

**==> picture [318 x 241] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609)15.22 (.601) 24.30 (.957)23.90 (.941)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>ry 16.10 (.634) ft 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>, 12.80 (.504) 23.90 (.941) 1<br>\AE O 4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| F<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER.3.   DIMENSION MEASURED @ HUB. 26.40 (1.039)24.40 (.961) 4<br>4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


® Repetitive rating;  pulse width limited by ® Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. 

oO) Starting TJ = 25°C, L = 3.8mH RG = 25Ω, IAS = 18A. 

6) ISD ≤ 18A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

® Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS © This is only applied to TO-220AB package 

@ This is applied to D[2] Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 03/04 

www.irf.com 

11 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFB31N20DPBF/power-mosfet-n-channel-200-v-31-a-0082-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irfb31n20dpbf/mosfet-n-200v-31a-to-220/dp/8648751)
---

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