# Power MOSFET, N Channel, 200 V, 56 A, 0.04 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8657939/)

**URL**: https://novapart.co/products/IRFB260NPBF/power-mosfet-n-channel-200-v-56-a-004-ohm-to-220ab
**SKU**: IRFB260NPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1800
**Stock**: 500+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Di

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 380W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 56A |
| Drain Source On State Resistance | 0.04ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8657939/)

PD - 95473 

## **SMPS MOSFET** 

## IRFB260NPbF 

## HEXFET Power MOSFET 

## **Applications** 

High frequency DC-DC converters Lead-Free 

**VDSS RDS(on) max ID 200V 0.040** Ω **56A** 

## **Benefits** 

Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current 

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TO-220AB<br>**----- End of picture text -----**<br>


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Absolute Maximum Ratings<br>TT Parameter Max. Units<br>ID @ TC = 25°C T_T Continuous Drain Current, VGS @ 10V 56 FE]<br>ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40 A<br>-——Se IDM Pulsed Drain Current  op oaJY 220 _<br>a PD @TC = 25°C Power Dissipation 380 W<br>eG Linear Derating Factor 2.5 W/°C<br>VGS Gate-to-Source Voltage  ± 20 V<br>dv/dt Peak Diode Recovery dv/dt  10 V/ns<br>ee<br>TJ Operating Junction and -55  to + 175<br>TSTG Storage Temperature Range °C<br>Soldering Temperature, for 10 seconds 300 (1.6mm from case )<br>Eee<br>Mounting  torqe,  6-32  or M3  screw                              10 lbf•in (1.1N•m)<br>a ee<br>**----- End of picture text -----**<br>


## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.40|°C/W|
|RθCS<br>RθJA|Case-to-Sink, Flat, Greased Surface<br>Junction-to-Ambient|0.50<br>–––|–––<br>62||



Notes through are  on page  8 

www.irf.com 

1 

## IRFB260NPbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

||||~~ee~~|~~ee~~|||||||
|---|---|---|---|---|---|---|---|---|---|---|
||**Parameter**<br>ee||**Min. **<br>ee<br>~~ee~~<br>~~ee~~|**Typ. **<br>ee<br>~~ee~~|**Max.**<br>ee||**Units**<br>ee|**Conditions**|||
|gfs|Forward Transconductance<br>~~es~~||29<br>~~ee ~~<br>~~es~~<br>~~ee~~|–––<br> ~~ee~~<br>~~es~~|–––<br>~~es~~||S<br>~~es~~|VDS= 50V, ID= 34A|||
|Qg|Total Gate Charge<br>~~ee~~||–––<br>~~ee~~<br>~~**es**~~|150<br>~~**ee**~~|220||nC|ID= 34A<br>VDS= 160V<br>VGS= 10V<br>~~@~~|||
|Qgs|Gate-to-Source Charge<br>~~ee~~<br>~~ee~~||–––<br>~~ee~~<br>~~**es**~~|24<br>~~ee~~<br>~~**ee**~~|37<br>~~ee~~||||||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~||–––<br>~~**es**~~<br>es|67<br>~~**ee**~~<br>ee|100||||||
|td(on)|Turn-On Delay Time<br>~~ee~~<br>~~ee~~||–––<br>~~**es** ~~<br>~~ee~~<br>es|17<br> ~~**ee**~~<br>~~ee~~<br>ee|–––<br>~~ee~~||ns|VDD= 100V<br>ID= 34A<br>RG= 1.8Ω<br>VGS= 10V<br>~~@~~<br>~~@~~|||
|tr<br>ee|Rise Time<br>~~ee~~||–––<br>es <br>~~ee~~|64<br> ee<br>~~ee~~|–––<br>~~ee~~||||||
|td(off)<br>ee|Turn-Off Delay Time<br>~~ee~~||–––<br>~~ee~~|52<br>~~ee~~|–––<br>~~ee~~||||||
|tf<br>ee<br>~~Se~~|Fall Time<br>~~ee~~<br>~~Se~~||–––<br>~~ee~~|50<br>~~ee~~|–––<br>~~ee~~||||||
|Ciss<br>~~Se~~<br>ee|Input Capacitance<br>~~Se~~<br>~~P—O~~||–––<br>~~P—O~~|4220<br>~~P—O~~|–––<br>~~P—O~~||pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz<br>~~@~~|||
|Coss<br>ee<br>a|Output Capacitance<br>~~P—O~~<br>||–––<br>~~P—O~~<br>|580<br>~~P—O~~<br>|–––<br>~~P—O~~<br>||||||
|Crss<br>ee<br>aee|Reverse Transfer Capacitance<br>~~P—O~~<br>Ds||–––<br>~~P—O~~<br>Ds|140<br>~~P—O~~<br>Ds|–––<br>~~P—O~~<br>Ds||||||
|Coss<br>aee|Output Capacitance<br>Ds||–––<br>Ds|5080<br>Ds|–––<br>Ds|||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz|||
|Coss<br>ee<br>ee|Output Capacitance<br>Ds<br>es||–––<br>Ds|230<br>Ds|–––<br>Ds|||VGS= 0V,  VDS= 160V,  ƒ = 1.0MHz<br>®|||
|Cosseff.<br>ee|Effective Output Capacitance<br>es||–––|500|–––|||VGS= 0V, VDS= 0V to 160V<br>®|||
|**Avalanche Characteristics**<br>ee es<br>®<br>es|||||||||||
|es<br>ee||**Parameter**<br>ee<br>><br>GO||||**Typ.**<br>GO|||**Max.**|**Units**|
|EAS<br>es<br>ee<br>Ce||Single Pulse Avalanche Energy<br>ee<br>><br>GO<br>a||||–––<br>GO|||450|mJ|
|IAR<br>ee<br>a<br>Ce||Avalanche Curren<br>ee<br>><br>GO<br>©<br>a||||–––<br>GO|||34|A|
|EAR<br>Ce||Repetitive Avalanche Energy<br>a||||–––|||38|mJ|



## **Diode Characteristics** 

|~~ee~~|**Parameter**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ. **<br>~~ee~~|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~ee~~<br>~~Se~~|Continuous Source Current<br>(Body Diode)<br>~~ee~~<br>~~Sea~~|–––<br>~~ee~~<br>~~Sea~~|–––<br>~~ee~~<br>~~Sea~~|56<br>~~Sea~~|~~Sea~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>~~Sea~~<br>~~a~~|
|ISM<br>~~ee~~<br>~~Se~~|Pulsed Source Current<br>(BodyDiode)<br>~~ee~~<br>~~Sea~~|–––<br>~~ee~~<br>~~Sea~~|–––<br>~~ee~~<br>~~Sea~~|220<br>~~Sea~~|||
|VSD<br>~~Se~~<br>~~Se~~|Diode Forward Voltage<br>~~Sea~~|–––<br>~~Sea~~<br>~~es~~|–––<br>~~Sea~~|1.3<br>~~Sea~~|V<br>~~Sea~~|TJ= 25°C, IS= 34A, VGS= 0V<br>~~Sea~~<br>~~a~~<br>®<br>~~°~~|
|trr<br>~~Se~~<br>~~Se~~|Reverse Recovery Time<br>~~Sea~~<br>~~es~~|–––<br>~~Sea~~<br>~~es~~<br>~~es~~|240<br>~~Sea~~<br>~~es~~|360<br>~~Sea~~<br>~~es~~|ns<br>~~Sea~~<br>~~es~~|TJ= 25°C, IF= 34A<br>di/dt = 100A/µs<br>~~Sea~~<br>~~a~~<br>~~es~~<br>~~°~~|
|Qrr<br>~~Se~~<br>~~Se~~|Reverse RecoveryCharge<br>~~Sea~~|–––<br>~~Sea~~<br>~~es~~|2.1<br>~~Sea~~|3.2<br>~~Sea~~|µC<br>~~Sea~~||
|ton<br>~~Se~~|Forward Turn-On Time<br>~~PT~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~es~~<br>~~°~~<br>~~PT~~|||||



www.irf.com 

2 

## IRFB260NPbF 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>                   10V                    10V<br>                   8.0V                    8.0V<br>                   7.0V T HE                    7.0V Uo |<br>100                6.0V 100                6.0V<br>                   5.5V                    5.5V<br>                   5.0V                    5.0V<br>BOTTOM   4.5V BOTTOM   4.5V<br>4.5V<br>10 | eA ro 10 | ell<br>4.5V<br>A e h i 000<br>1 Psi 1<br>20µs PULSE WIDTH 20µs PULSE WIDTH<br>0.1 RelieSS Tj = 25°C eel lll 0.1 elieSe Tj = 175°C eel ill<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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1000.00 a ee ee ee ee<br>TJ = 175°C<br>ee ee ee<br>100.00<br>| | AAT<br>ey |e es ee ee<br>T = 25°C<br>J<br>10.00 a y re ee ee<br>SS a a [es] — [eseses] —<br>es ee ee ee<br>VDS = 15V<br>1.00 |ee| | 20µs PULSE WIDTH<br>3.0 5.0 7.0 9.0 11.0 13.0 15.0<br>VGS, Gate-to-Source Voltage (V)<br>)<br>(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


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3.5<br>I D = 56A<br>rE ET EE EE<br>3.0<br>2.5<br>FEEEE E E<br>2.0<br>1.5 PTELLE<br>SaeeeP>4eeeeeL VELL<br>1.0<br>HEE<br>4|<br>0.5 rir] | | | [tlct tf<br>0.0 CARREPEELE RE V GS = 10V<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRFB260NPbF 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = Cgs + Cgd,   Cds    SHORTED<br>Crss    = Cgd<br>10000 Ht Coss   = Cds + Cgd<br>ace ee Ciss nl<br>1000<br>FEHR Et Coss SEH<br>100 e e Crss<br>eae<br>10 se<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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1000.00<br>100.00 e e el<br>T = 175°C<br>J<br>10.00 p f Uf |<br>ee a  |e ee ee ee<br>}——f} T = 25°C<br>1.00 J<br>| fo VGS = 0V<br>Seeppp<br>0.10<br>0.0 0.5 1.0 1.5 2.0<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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12<br>ID = 34A VDS =  160V<br>VDS =  100V<br>VDS =  40V<br>10<br>Ho Ya<br>7<br>YL<br>5<br>tyrit. fo<br>DARE<br>2<br>Vit<br>0<br>0 30 60 90 120 150<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>Sy ae Ht<br>100<br>AIS SS aT<br>100µsec<br>A NN<br>10<br>a ae<br>1msec<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse . 10msec<br>1 a ( aaa Sai<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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## IRFB260NPbF 

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60 tT Ty cE ET Ey Vos :<br>50 PSE EEE EEE oe<br>PL TNE EE Re ~<br>-<br>40 PTpipTT PPPAEIN ETEEE EY + tov Vbo<br>≤ 1<br>30 SERENE pulse Width ≤ 0.1 % ys<br>SRR eeeNee Duty Factor :<br>BERN<br>20 PT tT | TT Fig 10a.   Switching Time Test Circuit<br>10 Pi tT tT ttttNdt [ttt] VDS<br>90%<br>SoS eeeeeeee . )<br>0 Pi tet] | | tt tt |<br>25 50T   , Case TemperatureC 75 100 125 (  C)° 150 175 ||<br>10%<br>VGS |\¢ ole >!| <e|<br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 1<br>Perm<br>D = 0.50<br>0.1 E 0.20 eeer Ce Lil<br>— esSS 0.10  SSa eea eeeeellee<br>ae 0.05 5 ae<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) P DM<br>0.01 eeSe t h IETTel eal<br>t 1<br>t 2<br>a<br>Notes:<br>1. Duty factor D = t   / t1 2<br>ce ih 2. Peak T J = P DM x  Z thJC + T C<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>(Z        )thJC<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRFB260NPbF 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>or tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

**==> picture [121 x 96] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>_. tp<br>;<br>|<br>IAS<br>**----- End of picture text -----**<br>


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850<br>ID<br>NER<br>TOP 14A<br>24A<br>A<br>680 PN BOTTOM 34A<br>510 NEONENEESNSS<br>340 BNNGNEEEPONpot AAN  EEE|<br>170<br>SSA<br>of |OSS<br>pee ty SS<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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**----- Start of picture text -----**<br>
QG<br>ov o T<br>QGS QGD<br>VG<br>Mee<br>/<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>| lst .3µF<br>+<br>D.U.T. -VDS<br>VGS<br>6<br>3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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## IRFB260NPbF 

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**----- Start of picture text -----**<br>
D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ) Current ==<br>Ty) di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent<br>S$<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® Power MOSFETs 

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## IRFB260NPbF 

**==> picture [326 x 345] intentionally omitted <==**

**----- Start of picture text -----**<br>
10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>1.22 (.048)<br>ae 4 6.47 (.255)6.10 (.240)<br>15.24 (.600) | an C4 it<br>14.84 (.584) a7 1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE LEAD ASSIGNMENTSIGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>Jar 3- SOURCE4- DRAIN       4 - DRAIN 3- EMITTER4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>3X aie [1.40 (.055)] 1.15 (.045) 0.36  (.014)        M    B   A   M 2.92 (.115)<br>2.64 (.104)<br>Lt 2.54 (.100) || T<br>2X<br>NOTES:<br>     1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.<br>     2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.<br>Part Marking Information<br>E XAMPLE : T HIS IS  AN IRF 1010<br>LOT  CODE  1789<br>AS S EMB LE D ON WW 19, 1997 INT E RNAT IONAL PART  NUMB ER<br>IN T HE  ASS E MBLY LINE  "C" RE CT IF IE R<br>LOGO<br>Note: position indicates "Lead-Free"  "P" in assembly line DAT E CODE<br>ASS E MB LY YE AR 7 =  1997<br>LOT  CODE WE E K 19<br>LINE  C<br>® Pulse width ≤ 300µs; duty cycle ≤ 2%.≤ 300µs; duty cycle ≤ 2%. 300µs; duty cycle ≤ 2%.≤ 2%. 2%.<br>® Coss eff. is a fixed capacitance that gives the same charging<br>time as Coss while VDS is rising from 0 to 80% VDSS<br>**----- End of picture text -----**<br>


Notes: ®® Pulse width ≤ 300µs; duty cycle ≤ 2%.≤ 300µs; duty cycle ≤ 2%. 300µs; duty cycle ≤ 2%.≤ 2%. 2%. 

Repetitive rating;  pulse width limited by max. junction temperature. 0) Starting TJ = 25°C, L = 0.78mH 

RG = 25Ω, IAS = 34A. 6) ISD ≤ 34, di/dt ≤ 480A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 7/04 

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8 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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