# Power MOSFET, N Channel, 200 V, 24 A, 0.1 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8648743/)

**URL**: https://novapart.co/products/IRFB23N20DPBF/power-mosfet-n-channel-200-v-24-a-01-ohm-to-220ab
**SKU**: IRFB23N20DPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.2100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 170W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 170W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.1ohm |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 24A |
| Drain Source On State Resistance | 0.1ohm |
| Gate Source Threshold Voltage Max | 5.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8648743/)

PD - 95536 

## **SMPS MOSFET** 

IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF 

## HEXFET Power MOSFET 

## **Applications** 

High frequency DC-DC converters Lead-Free 

|**VDSS**|**RDS(on)max**|**ID**|
|---|---|---|
|**200V**|**0.10**Ω|**24A**|



## **Benefits** 

Low Gate-to-Drain Charge to Reduce Switching Losses 

Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

Fully Characterized Avalanche Voltage and Current 

TO-220AB D[2] Pak TO-262 IRFB23N20D IRFS23N20D IRFSL23N20D 

## **Absolute Maximum Ratings** 

CO **Parameter Max. Units** ~~a~~ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 24 ~~—~~ ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 17 A ~~a~~ IDM ~~ee~~ Pulsed Drain Current 96 PD @TA = 25°C Power Dissipation 3.8 W ~~ee Os~~ PD @TC = 25°C Power Dissipation 170 ~~eG~~ Linear Derating Factor 1.1 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 3.3 V/ns ~~Ne~~ TJ Operating Junction and -55  to + 175 ~~Fes~~ TSTG Storage Temperature Range °C ~~——~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~pi~~ Mounting  torqe,  6-32  or M3  screw 10 lbf•in (1.1N•m) 

## **Typical SMPS Topologies** 

Telecom 48V input  Forward Converter 

Notes through are  on page 11 www.irf.com 

1 

## IRFB/IRFS/IRFSL23N20DPbF 

## **Static @ TJ = 25°C (unless otherwise specified)** 

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||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|es|Parameter|Min.|es|T|ee|yp.|Max.|Units|Conditions|
|V(BR)DSS|es|Drain-to-Source Breakdown Voltage|200|–––|–––|V|VGS = 0V, ID = 250µA|
|∆V(BR)DSS/∆TJ   Breakdown Voltage Temp. Coefficient|–––      0.26   –––     V/°C    Reference to 25°C, ID = 1mA|
|es|es|ee|©|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|–––|0.10|Ω|VGS = 10V, ID = 14A|
|es es|ee|@|
|VGS(th)|es|Gate Threshold Voltage|3.0|–––|5.5|V|VDS = VGS, ID = 250µA|
|IDSS|Drain-to-Source Leakage Current|––––––|––––––|25025|µA|VVDSDS = 200V, V = 160V, VGSGS = 0V = 0V, TJ = 150°C|
|IGSS|eeee|Gate-to-Source Forward LeakageGate-to-Source Reverse Leakage|||––––––|eee|ee|––––––|-100100|nA|VVGSGS = 30V = -30V|
|Dynamic @ TJ = 25°C (unless otherwise specified)|
|ee|Parameter|Min.|ee|ee|Typ.|Max.|ee|Units|Conditions|
|gfs|es|Forward Transconductance|13|ed|–––|–––|S|VDS = 50V, ID = 14A|
|Qg|a|Total Gate Charge|–––|57      86                 ID = 14A|
|Qgs|ee|Gate-to-Source Charge|–––|14|21|nC|VDS = 160V|
|Qgd|Gate-to-Drain ("Miller") Charge|–––|27|40|VGS = 10V,|
|ee|es|ele)|
|td(on)|ee|Turn-On Delay Time|–––|14|–––|VDD = 100V|
|a|tr|Rise Time|–––|es|ee|32|–––|ns|ID = 14A|
|td(off)|Turn-Off Delay Time|–––|26|–––|RG = 4.6Ω|
|ee|es|
|tf|Fall Time|–––|16|–––|VGS = 10V|
|Ciss|Input Capacitance|–––|1960|–––|VGS = 0V|
|ee|ee|Coss|Output Capacitance|–––|ss|300|–––|VDS = 25V|°|
|Crss|Reverse Transfer Capacitance|–––|65|–––|pF|ƒ = 1.0MHz|
|a|©|
|Coss|Output Capacitance|–––|2200|–––|VGS = 0V,  VDS = 1.0V,  ƒ = 1.0MHz|
|eeDe|
|Coss|Output Capacitance|–––|120|–––|VGS = 0V,  VDS = 160V,  ƒ = 1.0MHz|
|a|
|Coss eff.|Effective Output Capacitance|–––|220|–––|VGS = 0V, VDS = 0V to 160V|
|ee|es|®|
|Avalanche Characteristics|
|Parameter|Typ.|Max.|Units|
|eee|s|
|EAS|Single Pulse Avalanche Energy|–––|250|mJ|
|Rse|X|
|IAR|Avalanche Current|–––|14|A|
|Re|©|
|re|EAR|©|Repetitive Avalanche Energy|©|–––|17|mJ|
|Thermal Resistance|
|I|es|Parameter|Typ.|Max.|Units|
|RθJC|Junction-to-Case|–––|0.90|
|es|
|©|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––|°C/W|
|RθJA|Junction-to-Ambien|–––|62|
|es|
|RθJA|Junction-to-Ambien|–––|40|
|re>|
|Diode Characteristics|
|Parameter|Min.|Typ.|Max.|Units|Conditions|
|IS|Continuous Source Current|–––|–––|24|MOSFET symbol|D|
|(Body Diode)|showing  the|
|ISM|Pulsed Source Current|–––|–––|96|integral reverse|G|
|—fwee|(Body Diode)|ee|p-n junction diode.|i,|S|
|VSD|Diode Forward Voltage|–––|–––|1.3|V|TJ = 25°C, IS = 14A, VGS = 0V|
|Se|trr|es|Reverse Recovery Time|nnTf|–––|200|300|ns|TJ = 25°C, IF = 14A|®|
|Qrr|Reverse RecoveryCharge|–––|1300|1940|nC|di/dt = 100A/µs|
|a|ton|PT|Forward Turn-On Time|ee|Intrinsic turn-on time is negligible (turn-on is dominated by L|es|S+LD)|
|ee|°|
|2|www.irf.com|

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## IRFB/IRFS/IRFSL23N20DPbF 

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 100<br>VGS<br>TOP 15V<br>12V<br>10V A<br>8.0V<br>7.0V<br>6.0V Nanaia]<br> 10 5.5V<br>BOTTOM 5.0V WV 2<br>S e<br>A 2<br> 1<br>er<br>Amst 5.0V<br>0.1 BSSpe ameoniiilll l<br>SSS FS eet<br>PT A<br>20µs PULSE WIDTH<br>PALIT T  = 25J °C<br>0.01<br>0.1 P ai  1 lin  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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 100<br>VGS<br>TOP 15V<br>12V<br>10V a ean<br>8.0V<br>7.0V<br>6.0V 1 onA<br>5.5V<br>BOTTOM 5.0V 11allSeal<br>A i<br> 10<br>PAE<br>5.0V a<br>a C TY eal<br>BV EB ay CLT<br>4 VV<br>20µs PULSE WIDTH<br>MA T  = 175J °C<br> 1<br>0.1 A f  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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 100 3.5 ID = 24A<br>SS——— aa P EToETE TE TE Tt<br>T  = 175  CJ ° > —— 3.0 Pt tT tT tT tT TE ET tT Tt<br>a e H{{ [{ttt]<br>2.5<br>E77 @nneenn aanttt |<br> 10<br>2.0<br>°<br>yf T  = 25  CJ bo top a<br>Py ee 1.5 Pt tte te te ty<br> 1 At | | | tt tt Ht ttt Pett ttt<br>1.0<br>> ee ee ee ee ee ee |<br>Se 0.5 pert<br>V      = 50VDS<br>20µs PULSE WIDTH TP P VGS = 10V<br>0.1 Perr [rr] 0.0 Pte tt TETryTT rr<br>5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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3 

## IRFB/IRFS/IRFSL23N20DPbF 

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20<br>ID = 14A<br>VDSVDSVDSDSDSDS = 160V= 100V= 40V 160V 100V 40V<br>VDSVDSDSDSDS = 100V= 40V 160V 100V 40V<br>16 VDSDSDSDS = 40V 160V 100V 40V<br>Zan ||<br>12 SaeEey 4aee<br>8<br>——<br>4<br>FOR TEST CIRCUIT<br>0 AViVi | ft a SEE FIGURE       1313<br>0 20 40 60 80 100<br>Q   , Total Gate Charge (nC)GG<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br> 1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>A<br> 100<br>|<br>10us<br>i kN fe<br>100us<br> 10 $<SahT—SS+i+ M EHS aa<br>1ms<br> T TCJ = 25  C= 175  C° ° 10ms<br> 1 p  Single Pulse f MCCUE NS<br> 1  10  100  1000<br>V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>**----- End of picture text -----**<br>


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100000 D =<br>VGS   = 0V,       f = 1 MHZ<br>CCrss  iss    = C  = Cgd gs + Cgd,   Cds    SHORTED 16 VDSVDSVDSDSDSDS = 160V= 100V= 40V 160V 100V 40V<br>C  = C + C<br>10000 oss   ds  gd<br>s y CT Zan ||<br>12<br>Ciss<br>1000 a S a SaeEey 4aee<br>8<br>Coss<br>a a, Sl ——<br>100<br>Crss 4<br>FOR TEST CIRCUIT<br>10 |eestiTT Sensi maar 0 AViVi | ft a SEE FIGURE       1313<br>1 10 100 1000 0 20 40 60 80<br>VDS, Drain-to-Source Voltage (V) Q   , Total Gate Charge (nC)GG<br>GS<br>V     , Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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 100<br>T  = 175  CJ °<br> 10 ne  44<br>pf Yi | ||<br>a r T  = 25  CJ °<br> 1<br>|ee| /| if a | a | eey a |<br>eeTE a a E V      = 0 V GS<br>0.1<br>0.2 0.5 0.8 1.1 1.4<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## IRFB/IRFS/IRFSL23N20DPbF 

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25 Nt ET tT Et Ett Yes Rww<br>20 PINE EEE ET Yes bur<br>COTO m L -<br>15<br>PUPP PEN EE va<br>≤ 1<br>SRRSERRE RENEEENEE cise= wid ≤ 0.1 % ys<br>10<br>SERN Fig 10a.   Switching Time Test Circuit<br>SERRE EEEN<br>5 VDSDS<br>90%<br>pi} t tty yt ET )<br>0 SERRERRE |<br>25 50 75 100 125 150 175 |<br>T   , Case TemperatureCC (  C)°° |<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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5 VDSDS<br>90%<br>pi} t tty yt ET )<br>0 SERRERRE |<br>25 50 75 100 125 150 175 |<br>T   , Case TemperatureCC (  C)°° |<br>10%<br>VGS<br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 1 aa a aereeeee<br>D = 0.50 CC<br>ere ern<br>ae  ee, ee<br>eee 0 ee eee<br>0.20<br>a =<br>0.10<br>0.1 CCA LUI<br>ae<br>0.05 PDM<br>a ee el<br>| | eee5 a a t1<br>0.02<br>SINGLE PULSE<br>0.01 A (THERMAL RESPONSE) t2<br>Notes:<br>S t y tn 1. Duty factor D = t   / t1 2<br>a a 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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5 

## IRFB/IRFS/IRFSL23N20DPbF 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>i<br>20V<br>boae tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>— tp 4<br>al<br>a<br>IAS<br>**----- End of picture text -----**<br>


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600<br>ID<br>PET<br>500 Garters TOP 5.9A 10A<br>BOTTOM 14A<br>NER<br>400 PAPELTE Tt<br>PONTTE EE<br>300 KEIN |<br>NEN EEE<br>200 SNE NESE<br>| | NNN<br>100 PEPSeRRKANSSNEEeTT<br>0 Pet TT TT SS<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>10V<br>e e<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>fae .3µF<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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## IRFB/IRFS/IRFSL23N20DPbF 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ) Current ==<br>Ty) di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent<br>S$<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® Power MOSFETs 

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7 

## IRFB/IRFS/IRFSL23N20DPbF 

Dimensions are shown in millimeters (inches) 

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10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>| g 1.22 (.048)<br>6.47 (.255)<br>4 6.10 (.240)<br>maey CO oa<br>15.24 (.600)<br>14.84 (.584)<br>LEAD ASSIGNMENTS<br>1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE  IGBTs, CoPACK<br>ar 1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>| Ta 3- SOURCE4- DRAIN       4 - DRAIN 3- EMITTER4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>3X (ip [1.40 (.055)] 1.15 (.045) 0.36  (.014)        M    B   A   M _ 2.92 (.115)<br>2.64 (.104)<br>a, 2.54 (.100) | T<br>2X<br>NOTES:<br>     1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.<br>**----- End of picture text -----**<br>


- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

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EXAMPLE: T HIS  IS  AN IRF 1010<br>LOT  CODE 1789<br>AS S EMB LED ON WW 19, 1997 INTE RNAT IONAL PART  NUMBER<br>IN THE AS S EMBLY LINE "C" RECT IFIER<br>LOGO<br>Note:   "P" in assembly line<br>position indicates "Lead-Free" DAT E CODE<br>YEAR 7 =  1997<br>AS S EMBLY<br>LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


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8 

## IRFB/IRFS/IRFSL23N20DPbF 

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Dimensions are shown in millimeters (inches)<br>**----- End of picture text -----**<br>


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T H IS  IS  AN  IR F 5 30 S  W IT H P AR T  N U M B E R<br>L OT  COD E  8 02 4 IN T E R N AT ION AL —<br>AS S E M B L E D  O N  W W  0 2, 2 00 0 R E CT IF IE R F 53 0 S<br>IN  T H E  AS S E M B L Y L IN E  "L " L OGO IOR 0021<br>80 24 D AT E  CO D E<br>pos ition indicates  "L ead-F ree"N ote: "P " in as s embly line ASL OT  COD ES E M B L Y v J U y u1 U Y E AR  0 =W E E K  02  2 00 0<br>L IN E  L<br>**----- End of picture text -----**<br>


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P AR T  N U MB E R<br>IN T E R N AT ION AL SY<br>R E CT IF IE R F 530 S<br>L OGO TéaRP002A<br>80 24 D AT E  CODE<br>P  =  D E S IGN AT E S  L E AD -F R E E<br>AS S E M B L Y LJuUY<br>L OT  CODE O bYQj YE AR  0 =P R OD U CT  (OP T ION AL ) 2000<br>WE E K  02<br>A =  AS S E MB L Y S IT E  COD E<br>**----- End of picture text -----**<br>


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## IRFB/IRFS/IRFSL23N20DPbF 

## TO-262 Package Outline 

## TO-262 Part Marking Information 

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E XAMP L E : T H IS  IS  AN  IR L 3103L<br>L OT  COD E  1789 P AR T  N U MB E R<br>AS S E MB L E D  ON  WW 19, 1997IN  T H E  AS S E MB L Y L INE  "C" INT E R N AT IONALR E CT IF IE RL OGO SS IeaRIRL3103L719C<br>N ote: "P " in as s embly line 17 89 DAT E  COD E<br>pos ition indicates  "L ead-F ree" AS S E MB L Y YE AR  7 =  1997<br>L OT  CODE WE E K  19<br>L INE  C<br>O R<br>P AR T  N U MB E R<br>INT E R N AT IONAL <><br>R E CT IF IE R IRL3103L<br>L OGO TeaRP719A<br>D AT E  CODE<br>17 89<br>P  =  D E S IGN AT E S  L E AD -F R E E<br>AS S E MB L Y P R OD U CT  (OP T IONAL )<br>L OT  CODE YE AR  7 =  1997<br>WE E K  19<br>A =  AS S E MB L Y S IT E  CODE<br>**----- End of picture text -----**<br>


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## IRFB/IRFS/IRFSL23N20DPbF 

## D[2] Pak Tape & Reel Infomation 

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TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>ake + 0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609)15.22 (.601) 24.30 (.957)23.90 (.941)<br>TRL<br>° 1.75 (.069) 1.<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>if 12.80 (.504) 23.90 (.941)4 TE<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| F<br>30.40 (1.197)<br>NOTES :       MAX.<br>ro] 1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER.3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039)24.40 (.961) O 3 Eo 4<br>**----- End of picture text -----**<br>


® Repetitive rating;  pulse width limited by ® Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. 

0) Starting TJ = 25°C, L = 2.6mH RG = 25Ω, IAS = 14A. 

6) ISD ≤ 14A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

® Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS © This is only applied to TO-220AB package 

@) This is applied to D[2] Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/04 

www.irf.com 

11 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFB23N20DPBF/power-mosfet-n-channel-200-v-24-a-01-ohm-to-220ab)
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- [Supplier page](https://es.farnell.com/en-ES/infineon/irfb23n20dpbf/mosfet-n-200v-24a-to-220/dp/8648743)
---

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