# Power MOSFET, N Channel, 150 V, 23 A, 0.09 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8648735/)

**URL**: https://novapart.co/products/IRFB23N15DPBF/power-mosfet-n-channel-150-v-23-a-009-ohm-to-220ab
**SKU**: IRFB23N15DPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7930
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 136W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 136W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.09ohm |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 23A |
| Drain Source On State Resistance | 0.09ohm |
| Gate Source Threshold Voltage Max | 5.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8648735/)

PD - 95535 

## **SMPS MOSFET** 

IRFB23N15DPbF IRFS23N15DPbF IRFSL23N15DPbF 

HEXFET Power MOSFET 

## **Applications** 

High frequency DC-DC converters 

Lead-Free 

## **Benefits** 

Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

Fully Characterized Avalanche Voltage and Current 

||**VDSS**<br>**150V**|**RDS(on)max**<br>**0.090**Ω|**RDS(on)max**<br>**0.090**Ω|**ID**<br>**23A**|
|---|---|---|---|---|
||||||
|TO-220AB<br>IRFB23N15D||D2Pak<br>IRFS23N15D|TO-262<br>IRFSL23N15D||



## **Absolute Maximum Ratings** 

|TOT.|**Parameter**<br>TOT.|**Max.**<br>TOT.|**Units**<br>TOT.|
|---|---|---|---|
|ID@ TC= 25°C<br>~~es~~<br>~~—~~|Continuous Drain Current, VGS@ 10V<br>~~es~~<br>~~ee~~|23<br>~~ee~~|A<br>~~ee~~|
|ID@ TC= 100°C<br>~~—~~|Continuous Drain Current, VGS@ 10V<br>~~ee~~|17<br>~~ee~~||
|IDM<br>~~—~~<br>a|Pulsed Drain Current<br>~~ee~~|92<br>~~ee~~||
|PD@TA= 25°C<br>~~es~~<br>~~ss~~|Power Dissipation<br>~~es~~<br>~~ss~~|3.8<br>~~ss~~|W<br>~~ss~~|
|PD@TC= 25°C<br>~~ss~~|Power Dissipation<br>~~ss~~|136<br>~~ss~~||
|~~eG~~|Linear DeratingFactor<br>~~eG~~<br>~~IO~~|0.9<br>~~eG~~<br>~~IO~~|W/°C<br>~~eG~~|
|VGS<br>~~ss~~|Gate-to-Source Voltage<br>~~ss~~<br>~~IO~~|± 30<br>~~ss~~<br>~~IO~~|V<br>~~ss~~|
|dv/dt<br>~~ss~~<br>~~ee~~|Peak Diode Recoverydv/dt<br>~~ss~~<br>~~IO~~<br>~~ee~~|4.1<br>~~ss~~<br>~~IO~~<br>~~ee~~|V/ns<br>~~ss~~<br>ee|
|TJ<br>~~Fs~~<br>~~ee~~|Operating Junction and<br>~~IO~~<br>~~Fs~~<br>~~ee~~|-55  to + 175<br>~~IO~~<br>~~Fs~~<br>~~ee~~|°C<br>ee|
|TSTG<br>~~Fs~~<br>~~ee~~|Storage Temperature Range<br>~~Fs~~<br>~~ee~~|||
|~~ee~~|Soldering Temperature, for 10 seconds<br>~~ee~~|300 (1.6mm from case )<br>~~ee~~||
|~~ee~~<br>ees|Mounting  torqe,  6-32  or M3  screw<br>10 lbf•in (1.1N•m)<br>~~ee~~<br>ees|10 lbf•in (1.1N•m)<br>~~ee~~ <br>ees|ee<br>ees|



## **Typical SMPS Topologies** 

Telecom 48V input DC-DC Active Clamp Reset Forward Converter 

Notes through are  on page 11 

www.irf.com 

1 

## IRFB/IRFS/IRFSL23N15DPbF 

## **Static @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min.**<br>**Typ. Max.**<br>**Units**<br> **Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>150<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient –––<br>0.18       –––     V/°C    Reference to 25°C, ID= 1mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>––– 0.090<br>Ω<br>VGS= 10V, ID= 14A<br>VGS(th)<br>Gate Threshold Voltage<br>3.0<br>–––<br>5.5<br>V<br>VDS= VGS, ID= 250µA<br>ee<br>~~ee ee es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es es~~<br>~~@~~<br>~~a~~|
|---|
|–––<br>–––<br>25<br>µA<br>VDS= 150V, VGS= 0V<br>–––<br>–––<br>250<br>VDS= 120V, VGS= 0V, TJ= 150°C<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>VGS= 30V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>nA<br>VGS= -30V<br>IGSS<br>IDSS<br>Drain-to-Source Leakage Current<br>~~OE~~<br>~~|~~TT<br>~~fT~~|
|**Dynamic @ TJ = 25°C (unless otherwise specified)**|
|**Parameter**<br>**Min. Typ. Max.**<br>**Units**<br> **Conditions**<br>gfs<br>Forward Transconductance<br>11<br>–––<br>–––<br>S<br>VDS= 25V, ID= 14A<br>Qg<br>Total Gate Charge<br>–––<br>37      56                 ID= 14A<br>ee<br>~~ee ee~~<br>~~es~~<br>~~es ee~~<br>~~Rs~~|
|Qgs<br>Gate-to-Source Charge<br>–––<br>9.6<br>14<br>nC<br>VDS= 120V<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>19<br>29<br>VGS= 10V,<br>td(on)<br>Turn-On Delay Time<br>–––<br>10<br>–––<br>VDD= 75V<br>tr<br>Rise Time<br>–––<br>32<br>–––<br>ID= 14A<br>td(off)<br>Turn-Off Delay Time<br>–––<br>18<br>–––<br>RG= 5.1Ω<br>tf<br>Fall Time<br>–––<br>8.4<br>–––<br>VGS= 10V<br>Ciss<br>Input Capacitance<br>–––<br>1200<br>–––<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>260<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>65<br>–––<br>pF<br>ƒ = 1.0MHz<br>Coss<br>Output Capacitance<br>–––<br>1520<br>–––<br>VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz<br>Coss<br>Output Capacitance<br>–––<br>120<br>–––<br>VGS= 0V,  VDS= 120V,  ƒ = 1.0MHz<br>Cosseff.<br>Effective Output Capacitance<br>–––<br>210<br>–––<br>VGS= 0V, VDS= 0V to 120V<br>ns<br>**Avalanche Characteristics**<br>~~ee~~<br>~~ee ee~~<br>~~@~~<br>~~ee~~<br>~~es~~<br>ee~~ee~~<br>~~Sn~~<br>~~@~~<br>~~a~~<br>~~es~~<br>a<br>©<br>eses<br>es<br>ee esee<br>®|
|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>EAS<br>Single Pulse Avalanche Energy<br>–––<br>260<br>mJ<br>IAR<br>Avalanche Current<br>–––<br>14<br>A<br>EAR<br>Repetitive Avalanche Energy<br>–––<br>13.6<br>mJ<br>ese~~s~~<br>es<br>><br>es<br>©<br>es~~©~~|
|**Thermal Resistance**|
|S<br>D<br>G<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br> **Conditions**<br>IS<br>Continuous Source Current<br>MOSFET symbol<br>(Body Diode)<br>–––<br>–––<br>showing  the<br>ISM<br>Pulsed Source Current<br>integral reverse<br>(BodyDiode)<br>–––<br>–––<br>p-njunction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>TJ= 25°C, IS= 14A, VGS= 0V<br>trr<br>Reverse Recovery Time<br>–––<br>150<br>220<br>ns<br>TJ= 25°C, IF= 14A<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>0.8<br>1.2<br>µC<br>di/dt = 100A/µs<br>ton<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>**Diode Characteristics**<br>23<br>92<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJC<br>Junction-to-Case<br>–––<br>1.1<br>RθCS<br>Case-to-Sink, Flat, Greased Surface<br>0.50<br>–––<br>°C/W<br>RθJA<br>Junction-to-Ambient<br>–––<br>62<br>RθJA<br>Junction-to-Ambient<br>–––<br>40<br>eees<br>es<br>a<br>©<br>~~es~~<br>~~©~~<br>~~es>~~<br>~~SSS~~<br>~~(nt~~<br>~~SY~~<br>~~@~~<br>~~es~~<br>~~ee~~ ed<br>~~Een~~<br>~~@~~<br>~~PT~~|
|2<br>www.irf.com|



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## IRFB/IRFS/IRFSL23N15DPbF 

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 100<br>VGS<br>TOP 15V<br>12V10V He tH<br>8.0V<br>7.0V nh AA<br>6.0V<br> 10 5.5V Aen ||<br>[ BOTTOM 5.0V a SSaeee eee<br> 1 Ff<br>e h<br>5.0V<br>0.1 Path<br>SS et<br>SSS eee ell<br>aPEGB<br>ee 20µs PULSE WIDTH ee ee<br>Panimei T  = 25J °C<br>0.01<br>0.1 ziti  1 an  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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 100<br>VGS<br>TOP 15V<br>12V10V a<br>8.0V<br>7.0V op A<br>6.0V<br>5.5V a<br>BOTTOM 5.0V 1||V4 TTI<br> 10 ee A<br>nD Zoe<br>anyG7) ( A 5.0V |<br>YL A,<br>a/ W 20µs PULSE WIDTH<br> 1 PMA T  = 175J °C<br>ee 0.1 A )  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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 100 SaaS SaaS S=—aaae<br>T  = 175  CJ ° ap anne<br> 10 pya SERS2ZERRRREEREEr Pre<br>P| ViA | | tT pt tT ht hh<br>P T  = 25  CJ ° P<br> 1 PETAL EE EL TE<br>BS SSS ESE SESS<br>ESE<br>V      = 50VDS<br>roe 20µs PULSE WIDTH<br>0.1<br>4 5 6 7 8 9 10 11 12<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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3.5<br>ID = 23A<br>BEC EEEEEEEEE<br>3.0 Pt tT Et EET ET<br>2.5<br>eT 4f ey tty<br>FCC EEEEE<br>2.0<br>1.5<br>PE eee TYEE TT<br>pt ft ft jet tt<br>1.0<br>HERE EEE EE<br>0.5 eo ETT [rere] yy<br>0.0 HPTT eT tee t P T t VGS TT = 10V<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRFB/IRFS/IRFSL23N15DPbF 

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10000 20<br>VGS   = 0V,       f = 1 MHZ ID = 14A<br>Ciss    = Cgs + Cgd,   Cds    SHORTED VDS = 120V<br>TH CCrss  oss    = C = Cgd ds + Cgd 16 PL | VVDSDS == 75V 30V ian<br>Ciss<br>1000<br>12<br>S S ect ert pti t lt |ge<br>PAIN ETT EH EEE 74a<br>Coss<br>8<br>100<br>S UING a ) EE<br>Crss<br>a ee ell 4 LA | [dl<br>A FOR TEST CIRCUIT<br>10 SEE FIGURE       13<br>1 10 100 1000 0<br>0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V) Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>At—y y<br> 10 CA)A)  100<br>T  = 175  CJJ ° 10us<br>T  = 25  CJJ ° 100us<br>TP Paul ell eco<br> 1 oe  10 EI N<br>1ms<br> T TCJ = 25  C= 175  C° ° 10ms<br>0.1 PERSET/LT/L TL UE ELSS SE V      = 0 V GSGS  1 [  Single Pulse S aS SR ll i<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4  1  10  100  1000<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SDSD<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


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 100<br>At—y<br> 10 CA)A)<br>T  = 175  CJJ °<br>T  = 25  CJJ °<br>TP<br> 1 oe<br>0.1 PERSET/LT/L TL UE ELSS SE V      = 0 V GSGS<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SDSD<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## IRFB/IRFS/IRFSL23N15DPbF 

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25 [tT] Vos Me<br>Nt [ttt] R<br>20<br>PS s but.<br>PET NEE EE a b - V<br>15<br>pitt | ONE “tov °<br>≤ 1<br>10 PittBEREANTT TING Tt ceepen Fase weth ≤ 0.1 % ys :<br>PitttT TTT EN Fig 10a.   Switching Time Test Circuit<br>BERR<br>5 VDS<br>90%<br>COP |<br>0 PEt TEL Tet |<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)° |<br>10%<br>VGS |<br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 10<br>Da Pee ce oes eee naan oes ee a | |<br>a Oe 0OO<br> 1 PT<br>D = 0.50<br>P e<br>0.20<br>e 0.10 e PDM<br>0.1 |<br>— 0.05 et t1<br>0.02 SINGLE PULSE t2<br>0.01 (THERMAL RESPONSE)<br>Notes:<br>amen S S SPro e<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.01 FT TT EE E<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRFB/IRFS/IRFSL23N15DPbF 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>;<br>20V<br>poae tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>— tp 4<br>/ al<br>|<br>IAS -<br>**----- End of picture text -----**<br>


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600<br>ID<br>PET<br>500 Wares TOP 9.8A 14A<br>BOTTOM 5.6A<br>NE<br>400 PAE EE eT<br>PINEET Et<br>300 NE KG REEEE<br>BNENEE Eee<br>200 SNE NEES<br>P| ANNE<br>1000 PTTeeeBaasARANSNE~e<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>V i<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>! & .3µF<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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## IRFB/IRFS/IRFSL23N15DPbF 

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**----- Start of picture text -----**<br>
D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ) Current ==<br>Ty) di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent<br>S$<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® Power MOSFETs 

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## IRFB/IRFS/IRFSL23N15DPbF 

Dimensions are shown in millimeters (inches) 

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**----- Start of picture text -----**<br>
10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>| g 1.22 (.048)<br>6.47 (.255)<br>4 6.10 (.240)<br>maey CO oa<br>15.24 (.600)<br>14.84 (.584)<br>LEAD ASSIGNMENTS<br>1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE  IGBTs, CoPACK<br>ar 1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>| Ta 3- SOURCE4- DRAIN       4 - DRAIN 3- EMITTER4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>3X (ip [1.40 (.055)] 1.15 (.045) 0.36  (.014)        M    B   A   M _ 2.92 (.115)<br>2.64 (.104)<br>a, 2.54 (.100) | T<br>2X<br>NOTES:<br>     1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.<br>**----- End of picture text -----**<br>


- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

EXAMPLE: T HIS  IS  AN IRF 1010 LOT  CODE 1789 AS S EMB LED ON WW 19, 1997 IN THE AS S EMBLY LINE "C" 

**Note:** "P" in assembly line position indicates "Lead-Free" 

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PART  NUMBER<br>INTE RNAT IONAL<br>RECT IFIER<br>LOGO<br>DAT E CODE<br>YEAR 7 =  1997<br>AS S EMBLY<br>LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


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## IRFB/IRFS/IRFSL23N15DPbF 

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**----- Start of picture text -----**<br>
Dimensions are shown in millimeters (inches)<br>**----- End of picture text -----**<br>


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T H IS  IS  AN  IR F 5 30 S  W IT H P AR T  N U M B E R<br>L OT  COD E  8 02 4 IN T E R N AT ION AL oY<br>AS S E M B L E D  O N  W W  0 2, 2 00 0 R E CT IF IE R F 53 0 S<br>IN  T H E  AS S E M B L Y L IN E  "L " L OGO TeaR 002.<br>pos ition indicates  "L ead-F ree"N ote: "P " in as s embly line ASL OT  COD ES E M B L Y 80‘+ [Ju 0 7O24 D AT E  CO D EY E AR  0 =W E E K  02  2 00 0<br>L IN E  L<br>P AR T  N U MB E R<br>IN T E R N AT ION AL i<br>R E CT IF IE R F 530S<br>L OGO IeaRPoo2A<br>80 24 D AT E  COD E<br>P  =  D E S IGN AT E S  L E AD -F R E E<br>AS S E MB L Y coy<br>P R OD U CT  (OP T ION AL )<br>L OT  COD E V?D 7,D YE AR  0 =  2000<br>W E E K  02<br>A =  AS S E MB L Y S IT E  COD E<br>**----- End of picture text -----**<br>


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## IRFB/IRFS/IRFSL23N15DPbF 

## TO-262 Package Outline 

## TO-262 Part Marking Information 

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E XAMP L E : T H IS  IS  AN  IR L 3103L<br>L OT  COD E  1789 P AR T  N U MB E R<br>AS S E MB L E D  ON  WW 19, 1997IN  T H E  AS S E MB L Y L INE  "C" INT E R N AT IONALR E CT IF IE RL OGO a IeaRIRL3103L719C<br>N ote: "P " in as s embly line 17 89 DAT E  COD E<br>pos ition indicates  "L ead-F ree" AS S E MB L Y YE AR  7 =  1997<br>L OT  CODE WE E K  19<br>L INE  C<br>O R<br>P AR T  N U MB E R<br>INT E R N AT IONAL |<br>R E CT IF IE R IRL3103L<br>L OGO TeaRP719A<br>D AT E  CODE<br>17 89<br>P  =  D E S IGN AT E S  L E AD -F R E E<br>AS S E MB L Y P R OD U CT  (OP T IONAL )<br>L OT  CODE YE AR  7 =  1997<br>WE E K  19<br>A =  AS S E MB L Y S IT E  CODE<br>**----- End of picture text -----**<br>


www.irf.com 

10 

## IRFB/IRFS/IRFSL23N15DPbF 

## D[2] Pak Tape & Reel Infomation 

**==> picture [375 x 251] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>ak. + 0.342 (.0135)<br>FEED DIRECTION ° 1.85 (.073)1.65 (.065) 11.60 (.457)11.40 (.449) 15.42 (.609)15.22 (.601) 24.30 (.957)23.90 (.941)<br>TRL<br>1.75 (.069) T<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>fi 12.80 (.504) 23.90 (.941)4 TE<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| F<br>30.40 (1.197)<br>NOTES :       MAX.<br>ro]oe 1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER.3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039)24.40 (.961) O 3 Eo 4<br>**----- End of picture text -----**<br>


Notes: ® Repetitive rating;  pulse width limited by ® Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. 

O Starting TJ = 25°C, L = 2.7mH[[®]] RG = 25Ω, IAS = 14A. 

> [[®]] Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 

6) ISD ≤ 14A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS, © This is only applied to TO-220AB package TJ ≤ 175°C 

@) This is applied to D[2] Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/04 

www.irf.com 

11 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFB23N15DPBF/power-mosfet-n-channel-150-v-23-a-009-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irfb23n15dpbf/mosfet-n-150v-23a-to-220/dp/8648735)
---

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