# Power MOSFET, P Channel, 55 V, 17 A, 0.1 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8648689/)

**URL**: https://novapart.co/products/IRF9Z34NPBF/power-mosfet-p-channel-55-v-17-a-01-ohm-to-220ab
**SKU**: IRF9Z34NPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3060
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 56W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 17A |
| Drain Source On State Resistance | 0.1ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8648689/)

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D<br>Voss = -55V<br>Ω<br>G<br>DS(on) ~<br>-<br>S<br>ID = -19A<br>TO-220AB<br>**----- End of picture text -----**<br>


P| Parameter | Typ. | θ Ric +Juneionto-CaseSSSC~“~—S~sYSC“‘é‘—SC*dYSCSC θ θ FRx | dunction-to-ambient SS SSC~=~wSC“‘(C‘SO~*dY;COC~*« 

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∆<br>Veross Ty | Breakdown Voltage Temp. Coefficient | —— |-0.05|—— | V/°C | Reference to 25°C, Ip = -1mA<br>Vestth)Rosen) Static Drain-to-Source On-Resistance | —- | ——-|0.10] Ω | Ves =-10V, Ip =-10A ®<br>Dis GateForward  Threshold Transconductance Voltage || -2.04.2 |-——|—-]|| —-| -4.0 | S$ V_ || Vps=Vos=25V,  Ves, Ip Ip  = =-10A-250uA<br>|mss Drain-to-Source; Leakage Current | — | -—| A VpsDS = -55V, 1 VesSCS = OV<br>° P=<br>80] Vos= av, Ves= OV, Tu = 150°0<br>loss Gate-to-Source Forward Leakage | —- | —-| 100 | nA Vas = 20V<br>Gate-to-Source Reverse Leakage | —- | —|-100 | Vos = -20V<br>Qg Total Gate Charge | —- |-—| 35 | Ip = -10A<br>|Qgs__| Gate-to-Source Charge | —- |-—|7.9 | nc | Vos = -44v<br>Qga Gate-to-Drain ("Miller") Charge | —- | —-[ 16 | Ves = -10V, See Fig. 6 and 13 ©<br>ta(on) Turn-On Delay Time | -—— | 13 | —- | Vpp = -28V<br>i [Risetime SS SSS«d | 85] | v= -108<br>Ω<br>tr Tum-Off Delay Time P30 [=] "° | Ro=13 Ω,<br>Fall Time | —- | 41 | — | Rp=26 See Fig. 10 @<br>Lp Internal Drain Inductance 45 Betenween leadea , D<br>nH 6mm (0.25in.) G<br>Ls Internal Source Inductance 7.5 from package .<br>and center of die contact S<br>Ciss Input Capacitance | —— | 620 | — | Vos = OV<br>Output Capacitance | —- |280|-— | pF | Vps=-25V<br>Reverse Transfer Capacitance | —- | 140 | — | f =1.0MHZ, See Fig. 5<br>Source-Drain Ratings and Characteristics<br>Is Continuous Source Current MOSFET symbol D<br>(Body Diode) A showing the<br>Ism Pulsed Source Current integral reverse G<br>(Body Diode) © p-n junction diode. S<br>**----- End of picture text -----**<br>


ISD ≤ ≤ ≤ Ty ≤ 175°C ≤ ≤ 

Ω 

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100 100<br> TOP          - 15V ves rrty  TOP          - 15V eT<br>                  - 10V                   - 10V<br>                  - 8.0V 2 or                   - 8.0V Aa<br>                  - 7.0V Hp A                   - 7.0V |<br>                  - 6.0V                   - 6.0V<br>                  - 5.5V i ee ae                   - 5.5V 0 2<br>                  - 5.0V                   - 5.0V<br> BOTTOM  - 4.5V  BOTTOM  - 4.5V<br>a ee ae:<br>WT | 6x |<br>10 ZN 10 ZIAt III<br>AM0) a ee ee)eel)///2 ae |<br>|eS /)/ 0) Ae eee Se)/)///7 7  aeee eeel<br>| YyA py p yrD/ A -4.5V |<br> -4.5V<br>Wie ll a  20µs PULSE WIDTH<br>1  T   = 25°Cc A 1  T   = 175°CC<br>{di eee eV / /<br>0.1 1 10 100 0.1 1 10 100<br>-V     , Drain-to-Source Voltage (V)DS -V     , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>100 oePPee ee ee eo 2.0 PALLfl =-17A LLLJ<br>ee ee ee ee ee eee Wy<br>PP ff | 1.5 PEE LL<br>Po ft ft ee L ai<br>T  = 25°CJ<br>| | rT A<br>T  = 175°CJ<br>10 Bane Zeeeeee 1.0 BARDEA GND» 40000EEERDRUL<br>Eau zeeenee al<br>PALye ee RTya<br>ne) AG ee eee eee eee Pu<br>» saeco 0.5 TET<br>| EEE EE EET<br>fy ft ft<br>A} |} CEE EEE<br> V     = -25VDS<br>1 0.0<br>LL | | os euse mors A PE Ep<br>4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>-V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>D D<br>-I   , Drain-to-Source Current (A) -I   , Drain-to-Source Current (A)<br>(Normalized)<br>D<br>-I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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1200 20<br>V      = 0V,         f = 1MHzGS  I    = -10AD<br>1000 TT| C      = C     + C     ,   C     SHORTEDC      = CC      = C     + Ciss         gs         gd         dsrss         gdoss        ds         gd 16 re a a<br> V      = -28VDS<br>—— eo PT yi<br>800 s<br>NS 12 ae<br>Ne ll ff<br>600 ss<br>ao} EY<br>8<br>400<br>A YQ "| 7 SY<br>ss<br>PS 4 a<br>200<br>=| _—_——. A<br>    SEE FIGURE 13<br>0 ee ell A 0 J} rem cnc<br>1 10 100 0 10 20 30 40<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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100<br>10<br>ea<br>T  = 175°CJ<br>T  = 25°CJ<br>PER<br>1<br>{fi | | |<br>SeeSERREOr ae es an Ge EER<br>0.1 PApA Et E =o<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>-V     , Source-to-Drain Voltage (V)SD<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>100 ee<br>10µs<br>fae aaSE S 100µs<br>10<br>pe O T<br>[_<br>1ms<br>sES tE<br>10ms<br>1 BBE  Single Pulse re LYP E<br>1 10 100<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   , Drain Current (A)<br>**----- End of picture text -----**<br>


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2015 MSPE EET» EE Yes Rnnn<br> PNET EEE F (meee -<br>+<br>[ELE]<br>PPT [TENN] a RG °<br>10 Ped EN ET tev ≤ 1<br>≤ 0.1 %<br>PETIT IN x Pulse Width ys<br>5 PT yy TEEyp yyTNING | Fig 10a.—Switching Time Test<br>td(on) tr td(off) tf<br>VGS<br>10%<br>0 Pit ETT Tee NN<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>|<br>90%<br>VDS<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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 10<br>a BOOe Oe Qe Oe<br>NE eee eo ee ee mGniil<br>D = 0.50<br> 1 p e et er<br>0.20<br>— ere tt<br>0.10<br>S Y<br>0.05 Ne een PDM<br>0.1 0.02 SINGLE PULSE<br>Ce 0.01 (THERMAL RESPONSE) e t1<br>t2<br>a<br>Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>ie i<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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VDS L<br>RG D.U.T L. VDD<br>-20V F IAS DRIVER ’<br>i tp 0.01Ω<br>15V<br>**----- End of picture text -----**<br>


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IAS<br>Starting T  , Junction Temperature (°C)JJ<br>\ | Fig 12c. Maximum Avalanche Energy<br>\ Vs. Drain Current<br>\<br>¢— tp<br>V(BR)DSS<br>12b. Unclamped Inductive Waveforms<br>Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>QG 12V .2µF<br>a ! =) .3µF<br>QGS QGD D.U.T. +-VDS<br>VGS<br>VG<br>-3mA<br>ivan Cia@ |<br>IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>


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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>Re •   dv/dt controlled by Rg +<br>•   -<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent UW<br>Ripple  ≤ 5%<br>**----- End of picture text -----**<br>


## Dimensions are shown in millimeters (inches) 

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10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>1.22 (.048)<br>Se, 4 6.47 (.255)6.10 (.240)<br>15.24 (.600) | an C4 it<br>14.84 (.584)<br>LEAD ASSIGNMENTS<br>cs 1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE  IGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>3- SOURCE       4 - DRAIN 3- EMITTER<br>| dar 4- DRAIN 4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>3X ai [1.40 (.055)] 1.15 (.045) 0.36  (.014)        M    B   A   M 2.92 (.115)<br>2.64 (.104)<br>a, 2.54 (.100) || T<br>2X<br>NOTES:<br>**----- End of picture text -----**<br>


- 1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 

- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

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E XAMPLE: T HIS  IS  AN IRF 1010<br>LOT  CODE 1789<br>AS S EMBLED ON WW 19, 1997 INT ERNAT IONAL PART  NUMBER<br>IN T HE AS S E MBLY LINE "C" RE CT IF IER<br>LOGO<br>Note: position indicates "Lead-Free"  "P" in assembly line DAT E CODE<br>YEAR  7 =  1997<br>AS SE MBLY<br>LOT  CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/04 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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