# Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-262, Through Hole

![Product image](https://novapart.co/image/farnell:1298540/)

**URL**: https://novapart.co/products/IRF9540NLPBF/power-mosfet-p-channel-100-v-23-a-0117-ohm-to-262
**SKU**: IRF9540NLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.7300
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on); Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (17-Jan-2023) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 3.1W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-262 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 23A |
| Drain Source On State Resistance | 0.117ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1298540/)

Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L P-Channel Lead-Free 

|Ω<br>Ultra Low On-Resistance<br>150°C Operating Temperature<br>Fast Switching<br>Repetitive Avalanche Allowed up to Tjmax<br>Some Parameters are Different from<br>D<br>G<br>;<br>Voss = -100V<br>Rps(on) = 117m|
|---|
|IRF9540NS/L<br>P-Channel<br>Lead-Free<br>S<br>°<br>Ip = -23A|
|D<br>D<br>Description|
|Features of this design  are a 150°C junction|
|operating temperature, fast switching speed and|
|S<br>G<br>S<br>D<br>G<br>improved repetitive avalanche rating . These fea-<br>tures combine to make this design an extremely<br>D|
|D2Pak<br>TO-262<br>efficient and reliable device for use in  a wide|
|IRF9540NSPbF<br>IRF9540NLPbF<br>variety of other applications.|
|**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>**Absolute Maximum Ratings**<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~es~~|
|**Parameter**<br>**Units**<br>**Max.**<br>~~a~~|
|ID@ TC= 25°C<br>Continuous Drain Current, VGS@ -10V<br>A<br>-23|
|ID@ TC= 100°C<br>Continuous Drain Current,VGS @ -10V<br>IDM<br>Pulsed Drain Current<br>PD@TA= 25°C<br>Maximum Power Dissipation<br>W<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>Linear DeratingFactor<br>W/°C<br>110<br>0.9<br>-14<br>-92<br>3.1<br>~~—~~<br>~~ee~~<br>~~——————————~~<br>~~es~~<br>~~ee~~<br>~~ee~~|
|VGS<br>Gate-to-Source Voltage<br>V<br>EAS<br>Single Pulse Avalanche Energy<br>mJ<br>IAR<br>Avalanche Current<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>dv/dt<br>Peak DiodeRecovery dv/dt<br>V/ns<br>TJ<br>Operating Junction and<br>°C<br>TSTG<br>Storage Temperature Range<br>SolderingTemperature,for 10 seconds<br>**Thermal Resistance**<br>± 20<br>11<br>84<br>-14<br>300 (1.6mm fromcase )<br>-55  to + 150<br>-13<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~>~~<br>~~ne~~<br>~~pf~~|
|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJC<br>Junction-to-Case<br>–––<br>1.1<br>°C/W<br>RθJA<br>Junction-to-Ambient(PCB Mount,steadystate)<br>–––<br>40<br>~~aSN~~<br>~~a~~<br>~~>~~|
|www.irf.com<br>1|



## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~po~~|**Parameter**<br>~~po~~|**Min.**<br>~~po~~|**Typ.**<br>~~po~~|**Max. **<br>~~po~~|**Units**<br>~~po~~|**Conditions**<br>~~po~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~po~~|Drain-to-Source Breakdown Voltage<br>~~po~~|-100<br>~~po~~|–––<br>~~po~~|–––<br>~~po~~|V<br>~~po~~|VGS= 0V,ID= -250µA<br>~~po~~|
|∆ΒVDSS/∆TJ<br>~~po~~|Breakdown Voltage Temp. Coefficient<br>~~po~~|–––<br>~~po~~|-0.11<br>~~po~~|–––<br>~~po~~|V/°C<br>~~po~~|Reference to 25°C,ID= -1mA<br>~~po~~|
|RDS(on)<br>~~po~~|Static Drain-to-Source On-Resistance<br>~~po~~|–––<br>~~po~~|–––<br>~~po~~|117<br>~~po~~|mΩ<br>~~po~~|VGS= -10V,ID= -14A<br>~~po~~|
|VGS(th)<br>~~po~~|Gate Threshold Voltage<br>~~po~~|-2.0<br>~~po~~|–––<br>~~po~~|-4.0<br>~~po~~|V<br>~~po~~|VDS= VGS,ID= -250µA<br>~~po~~|
|gfs<br>~~po~~|Forward Transconductance<br>~~po~~|5.6<br>~~po~~<br>~~ee~~|–––<br>~~po~~<br>~~ee~~|–––<br>~~po~~<br>~~ee~~|S<br>~~po~~<br>~~ee~~|VDS= -50V,ID= -14A<br>~~po~~<br>~~eee~~|
|IDSS<br>~~ee~~|Drain-to-Source Leakage Current<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|-50<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~<br>|VDS= -100V,VGS= 0V<br>~~ee~~<br>~~eee~~|
|||–––<br>~~ee~~<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~ee~~<br>~~a~~|-250<br>~~ee~~<br>~~ee~~<br>~~a ~~||VDS= -80V,VGS= 0V,TJ= 125°C<br>~~ee~~<br>~~eee~~<br> ~~ee~~|
|IGSS<br>~~pry~~|Gate-to-Source Forward Leakage<br>~~pry~~|–––<br>~~ee~~<br>~~pry~~|–––<br>~~ee ~~<br>~~pry~~|100<br> ~~ee~~<br>~~pry~~|nA<br>~~ee ~~<br>~~pry~~|VGS= -20V<br> ~~eee~~<br>~~pry~~|
||Gate-to-Source Reverse Leakage<br>~~pry~~<br>~~po~~|–––<br>~~pry~~<br>~~po~~|–––<br>~~pry~~<br>~~po~~|-100<br>~~pry~~<br>~~po~~||VGS= 20V<br>~~pry~~|
|Qg<br>~~a~~|Total Gate Charge|–––|73|110|nC|ID= -14A<br>VDS= -80V<br>VGS= -10V<br>®|
|Qgs<br>~~a~~|Gate-to-Source Charge|–––|13|20|||
|Qgd<br>~~a~~|Gate-to-Drain("Miller")Charge|–––|38|57|||
|td(on)<br>~~a~~|Turn-On DelayTime|–––|13|–––|ns|VGS= -10V<br>RG= 5.1Ω<br>VDD= -50V<br>ID= -14A<br>®<br>D|
|tr<br>~~a~~|Rise Time|–––|64|–––|||
|td(off)<br>~~a~~|Turn-Off DelayTime|–––|40|–––|||
|tf<br>~~a~~<br>~~ee~~|Fall Time<br>~~ee~~|–––<br>|45<br>|–––<br>|||
|LD<br>~~ee~~<br>~~ee~~|Internal Drain Inductance<br>~~ee ee~~<br>~~ee~~|–––<br>~~ee~~<br>|4.5<br>~~ee~~<br>|–––<br>~~ee~~<br>|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and centerofdie contact<br>D<br>~~fe~~<br>~~:~~|
|LS<br>~~ee~~<br>~~ee~~|Internal Source Inductance<br>~~ee ee~~<br>~~ee ~~|–––<br>~~ee~~<br> ~~ee~~|7.5<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|Ciss<br><br>~~ee~~<br>~~a~~|Input Capacitance<br>~~ee~~<br>~~ee ~~|–––<br>~~ee~~<br>|1450<br>~~ee~~<br>|–––<br>~~ee~~<br>|pF<br>|VGS= 0V<br>VDS= -25V<br>ƒ= 1.0MHz,See Fig. 5<br>~~fe~~|
|Coss<br>~~a~~|Output Capacitance|–––|430|–––|||
|Crss<br>~~a~~|Reverse Transfer Capacitance<br>|–––<br>|230<br>|–––<br>|||



® Starting Ty = 25°C, L = 0.88mH Rg=25 Ω , lag =-14A. (See Figure ® ISD ≤ -14A, di/dt ≤ -620A/us, Vpp ≤ ≤ 

® Pulse width ≤ 300us; duty cycle ≤ 2%. © When mounted on 1" square PCB (FR-4or G-10 

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1000 VGS Saasseeee 1000 VGS eee<br>TOP           -15V FE eeell TOP           -15V<br>-10V -10V<br>-8.0V -8.0V<br>-7.0V -7.0V<br>100 -6.0V 100 -6.0V<br>-5.5V Hia a-HH -5.5V aStiiemmaillili<br>-5.0V -5.0V<br>BOTTOM -4.5V Coies| BOTTOM -4.5V alllZ-—<br>10 go o 10 Gr.<br>| Og CT a eee<br>ee eS An eee Ae a<br>-4.5V<br>1 1<br>Zf z === o————— |LTyr ZZ<br>a t -4.5V CG<br>≤60µs PULSE WIDTH ≤60µs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>0.1 Poth Ertl 0.1 ath i<br>aii 1 ES rin<br>0.1 1 10 100 0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>100 2.0<br>TJ = 25°C —— ID = -14A<br>VGS = -10V<br>1) pS TJ = 150°C THT<br>|Al<br>10 | AO 1.5 Pilea<br>PAE | Z<br>ey PY LLL DALE<br>2  oe ya<br>1 1.0<br>LE<br>AY V [E] DS = -50V [E] A<br>≤60µs PULSE WIDTH<br>dee) EE<br>0.1 0.5<br>2 4 6 8 10 12 14 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>-VGS, Gate-to-Source Voltage (V)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>-ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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10000 20<br>P|— VCCGS  iss rss    = C = C = 0V,       f = 1 MHZgs gd + Cgd,  Cds SHORTED ID= -14A VDS= -80V<br>Coss  = Cds + Cgd 16 VDS= -50V ><br>= VDS= -20V<br>Ciss 12<br>Sy } 7<br>1000<br>Coss<br>ee gr<br>8<br>ee eili|| 4<br>Crss<br>4<br>Hil i Zo<br>100 0<br>1 10 100 0 20 40 60 80 100 120<br>-VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>a TJ = 150°C aa| PT=a: eneret:CE<br>100 ee eer) eed eee<br>Aa | | |<br>10<br>Ss ey 2A ey 2Sf eC evee e A id oeFemme e$Iee e<br>(Vi; 10<br>100µsec<br>ey ee ee ee ee | Po LEaSS 1msec Sri<br>TJ = 25°C<br>1 10msec<br>2Seoe  ee ee eeeeee eee eeeee 1 SSS a aaa<br>2 ee ee ee ee ee eee Tc = 25°C eeeee<br>2 Tj = 150°C Se<br>(eee VGS = 0V 0.1 Single Pulse A<br>0.1<br>1 10 100 1000<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>-VDS  , Drain-toSource Voltage (V)<br>-VSD, Source-to-Drain Voltage (V)<br>C, Capacitance(pF)<br>-VGS, Gate-to-Source Voltage (V)<br>-ISD, Reverse Drain Current (A) -ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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24 Ves D.UT.<br>-<br>20 SeeN j 7 + Vpp<br>NR eee...<br>16 ≤ 1<br>≤ 0.1 %<br>TENE] uty Factor<br>12<br>ie Fig 10a. Switching Time Test Circuit<br>8<br>td(on) tr td(off) tf<br>VGS<br>4 10%<br>P| | TN a<br>|<br>0<br>P| | | \<br>25 50 75 100 125 150 90% X |<br> TC , Case Temperature (°C) VDS \<br>Fig 9. Maximum Drain Current vs. Fig 10b. Switching Time Waveforms<br>Case Temperature<br>10<br>EP<br>1<br>D = 0.500.20 eee rrr Ee ee | Ee ee a _<br>Pe ty<br>0.1 0.10 me T R E 1R1 PP R 2R2 R 3 R3 Ri (°C/W Eh ) τi (sec)<br>0.05 τJ τJ τC 0.1737838 0.0000610<br>0.02 gc τ1 τ1 τ2 τ2 τ3τ3 ee 0.4335992 0.0019590<br>0.01 ee 0.01 e ra Ci= Ciτi/Rii/Ri a 0.4921007 0.0260060 |<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>ie aa senateeea eet ee e 2. Peak Tj = P dm x Zthjc + Tc ee ee<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>-ID,  Drain Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


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VDS L<br>|<br>RGG D.U.T VDDDD<br>on :<br>IASAS<br>-20V DRIVER<br>2.:: aetltl tpp Y 0.01ΩΩ<br>~<br>15V<br>12a. Unclamped Inductive Test Circuit Test Circuit Circuit<br>IASAS ae<br>:<br>. !<br>)<br>< tp<br>V(BR)DSS(BR)DSS<br>**----- End of picture text -----**<br>


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350<br>on RGG D.U.T : VDDDD 300 NEE TOP         -6.7A ID<br>IASAS A -9.6A<br>2.:: -20V aetltl tpp Y 0.01ΩΩ DRIVER 250 Nt tT BOTTOM -14A<br>~ ENGR<br>200<br>GRNEREEEEE<br>15V 150 K | A<br>NIA TTT<br>100<br>IN N<br>12a. Unclamped Inductive Test Circuit Test Circuit Circuit ~~ CURR<br>IASAS 50<br>0<br>ae Ct} PSS<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>:<br>. ! Fig 13. Maximum Avalanche Energy<br>) vs. Drain Current<br>< tp<br>V(BR)DSS(BR)DSS<br>12b. Unclamped Inductive Waveforms<br>Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>QG 12V .2µF<br>.3µF<br>+ if a<br>QGS QGD | ' D.U.T. +-VDS<br>VG VGS<br>-3mA<br>aa ay |<br>Ort.<br>IG ID<br>Charge Current Sampling Resistors<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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D.U.Tx +    •  CircuitLowLayoutStray ConsiderationsInductance<br>®  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>00<br>Rg •   dv/dt controlled by Rg +<br>•   Isp controlled by Duty Factor "D" -<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. I Period<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current i Current di/dt f<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>$<br>Ripple  ≤ 5%<br>**----- End of picture text -----**<br>


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THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL (A a<br>ASSEMBLED ON WW 02, 2000 RECTIFIER N F530S<br>IN THE ASSEMBLY LINE "L" LOGO TeaR 002 a<br>DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY<br>assembly line position LOT CODE 7 Vf WEEK 02<br>"Lead — Free’ u u LINE L<br>OR<br>INTERNATIONAL oo  — 2 PART NUMBER<br>RECTIFIER \ F530S<br>LOGO DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY -<br>LOT CODE :: YEAR 0 =  2000<br>UU WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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## TO-262 Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

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EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789ASSEMBLED ON WW 19, 1997 INTERNATIONAL a a PART NUMBER<br>RECTIFIER<br>IN THE ASSEMBLY LINE "C" LOGO<br>DATE CODE<br>Note: "P" in assembly lineposition indicates "Lead-Free" ASSEMBLY Ww. 17 89 YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL —S<br>RECTIFIERLOGO \ | Te9RIRL31032719 Abe<br>DATE CODE<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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Dimensions are shown in millimeters (inches) 

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TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>


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FEED DIRECTION<br>**----- End of picture text -----**<br>


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13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418. 26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


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4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE.<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. International 

TOR Rectifier 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/05 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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- [Supplier page](https://es.farnell.com/infineon/irf9540nlpbf/mosfet-p-100v-to-262/dp/1298540)
---

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