# Power MOSFET, P Channel, 30 V, 22 A, 2900 µohm, DirectFET MX, Surface Mount

![Product image](https://novapart.co/image/farnell:2781122RL/)

**URL**: https://novapart.co/products/IRF9383MTRPBF/power-mosfet-p-channel-30-v-22-a-2900-ohm
**SKU**: IRF9383MTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9920
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-22A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0023ohm; Rds(on) Test; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 5Pins |
| Channel Type | P Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 113W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET MX |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 22A |
| Drain Source On State Resistance | 2900µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781122RL/)

## DirectFET[®] P-Channel Power MOSFET 

## **Applications** 

Isolation Switch for Input Power or Battery Application High Side Switch for Inverter Applications 

## **Features and Benefits** 

|**VDSS**|**VDSS**|**VGS**|**VGS**|**RDS(on)**|**RDS(on)**|**RDS(on)**|**RDS(on)**|**RDS(on)**|
|---|---|---|---|---|---|---|---|---|
|-30V max||±20V max||2.3mΩ@-10V|||3.8mΩ@-4.5V||
|**Qg tot**|**Qgd**||**Qgs2**||**Qrr**|**Qoss**||**Vgs(th)**|
|67nC|29nC||9.4nC||315nC|59nC||-1.8V|



Environmentaly Friendly Product 

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RoHs Compliant Containing no Lead,<br>no Bromide and no  Halogen<br>S<br>Common-Drain P-Channel MOSFETs Provides G<br>High Level of Integration and Very Low RDS(on) D S D<br>MX DirectFET ™  ISOMETRIC<br>Applicable DirectFET Outline and  Substrate Outline (see p.7,8 for details)<br>SQ SX ST MQ MX MT MP MC<br>a a|<br>Description<br>The IRF9383MTRPbF combines the latest HEXFET [®]   P-Channel Power MOSFET Silicon technology with the advanced DirectFET [®]<br>packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.  The DirectFET [®]<br>package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or<br>convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET [®]<br>package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.<br>Standard Pack<br>Orderable part number Package Type Note<br>ee Form Quantity<br>eGee IRF9383MTRPbF ee DirectFET® Medium Can® Medium Can Medium Can ee Ta eee pe and Reele and Reel ee 4800<br>IRF9383MTR1PbF DirectFET ®  Medium Can Tape and Reelpe and Reele and Reel 1000 "TR1" suffix  EOL notice #264<br>po | SM | ~ | ——<br>Absolute Maximum Ratings<br>QO Parameter Max. Units<br>VDSDS Drain-to-Source VoltageSource Voltageource Voltagegee -30<br>V<br>VGSGS NNaa Gate-to-Source Voltageate-to-Source VoltageSource Voltageource Voltagegee  ±20<br>ID @ TAD @ TA @ TAA = 25°C   25°C  °C  C   © Continuous Drain Current, VGS @ 10V , VGS @ 10V  VGS @ 10V GS @ 10V  @ 10V  -22<br>IDD @ TA = 70°C TA = 70°CA = 70°C = 70°C0°C°CC © Continuous Drain Current, VGS @ 10V , VGS @ 10V  VGS @ 10V GS @ 10V  @ 10V  QO -17<br>A<br>ID @ TCD @ TC @ TCC = 25°C 25°C°CC © Continuous Drain Current, VGS @ 10V , VGS @ 10V  VGS @ 10V GS @ 10V  @ 10V  QO -160<br>IDMDM Pulsed Drain Current Current urrent  -180<br>_——— QO<br>12 14.0<br>10 ID = -22AD = -22A= -22A 12.0 ID= -18AD= -18A= -18A VDS= -24VDS= -24V= -24V Ft<br>Pp V DS = -15V<br>ASE 10.0 ft<br>8 VDS= -6.0VDS= -6.0V= -6.0V<br>8.0<br>aa aa 708<br>6<br>ee<br>T = 125°C 6.0<br>4 IW | J  a ee<br>BNGEEEees 4.0 7 a a<br>2 P| Ser Serer T = 25°C 2.0 eA dd<br>J<br>0 pt tT TT ty tf 0.0 YE Tit ttt yt |<br>2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 120 140 160 180<br> QG  Total Gate Charge (nC)<br>-VGS, Gate -to -Source Voltage  (V)<br>Fig 1.    Typical On-Resistance vs. Gate Voltage Fig 2.    Typical  Total Gate Charge vs Gate-to-Source Voltage<br>-VGS, Gate-to-Source Voltage (V)<br>) Ω<br>Typical RDS(on) (m<br>**----- End of picture text -----**<br>


**Standard Pack Orderable part number Package Type Note** ~~eGee~~ IRF9383MTRPbF ~~ee~~ DirectFET® Medium Can® Medium Can Medium Can ~~ee~~ Ta ~~eee~~ pe and Reele and Reel **Form Quantity** ~~ee~~ 4800 **y** ~~IRF9383MTR1PbF DirectFET~~ ® ~~Medium Can Tape and Reelpe and Reele and Reel 1000 "TR1" suffix~~ EOL notice #264 ~~po | SM | ~ | ——~~ **Absolute Maximum Ratings** ~~QO~~ **Parameter Max. Units** VDSDS Drain-to-Source VoltageSource Voltageource Voltagegee -30 V VGSGS ~~NNaa~~ Gate-to-Source Voltageate-to-Source VoltageSource Voltageource Voltagegee ±20 ID @ TAD @ TA @ TAA = 25°C   25°C  °C  C ~~©~~ Continuous Drain Current, VGS @ 10V , VGS @ 10V  VGS @ 10V GS @ 10V  @ 10V -22 IDD @ TA = 70°C TA = 70°CA = 70°C = 70°C0°C°CC ~~©~~ Continuous Drain Current, VGS @ 10V , VGS @ 10V  VGS @ 10V GS @ 10V  @ 10V ~~QO~~ -17 A ID @ TCD @ TC @ TCC = 25°C 25°C°CC ~~©~~ Continuous Drain Current, VGS @ 10V , VGS @ 10V  VGS @ 10V GS @ 10V  @ 10V ~~QO~~ -160 IDMDM Pulsed Drain Current Current urrent -180 ~~_——— QO~~ 12 14.0 10 ID = -22AD = -22A= -22A 12.0 ID= -18AD= -18A= -18A ~~VDS= -24VDS= -24V= -24V Ft Pp~~ V ~~DS~~ = -15V ~~ASE~~ 10.0 ~~ft~~ 8 VDS= -6.0VDS= -6.0V= -6.0V 8.0 ~~aa aa 708~~ 6 ~~ee~~ T = 125°C 6.0 4 ~~IW~~ | J ~~a ee BNGEEEees~~ 4.0 ~~7 a a~~ 2 ~~P| Ser Serer~~ T = 25°C 2.0 ~~eA dd~~ J 0 ~~pt tT TT ty tf~~ 0.0 ~~YE Tit ttt yt |~~ 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 120 140 160 180 QG  Total Gate Charge (nC) 

**Fig 2.** Typical  Total Gate Charge vs Gate-to-Source Voltage 

Notes: ®® Click on this section to link to the appropriate technical paper. TC measured with thermocouple mounted to top (Drain) of part. measured with thermocouple mounted to top (Drain) of part. 

TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating;  pulse width limited by max. junction temperature. 

Click on this section to link to the appropriate technical paper. ® Click on this section to link to the DirectFET[®] Website. ® @ Surface mounted on 1 in. square Cu board, steady state. 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage|-30|–––|–––|V|VGS= 0V, ID= -250μA|
|ΔΒVDSS/ΔTJ|Breakdown Voltage Temp. Coefficient|–––|0.0159|–––|V/°C|Reference to 25°C, ID= -1.0mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|2.3|2.9|mΩ|VGS= -10V, ID= -22A�|
|||–––|3.8|4.8||VGS= -4.5V, ID= -18A�|
|VGS(th)|Gate Threshold Voltage|-1.3|-1.8|-2.4|V|VDS= VGS, ID= -150μA|
|ΔVGS(th)/ΔTJ|Gate Threshold Voltage Coefficient|–––|-5.9|–––|mV/°C||
|IDSS|Drain-to-Source Leakage Current|–––|–––|-1.0|μA|VDS= -24V, VGS= 0V|
|||–––|–––|-150||VDS= -24V, VGS= 0V, TJ= 125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|-100|nA|VGS= -20V|
||Gate-to-Source Reverse Leakage|–––|–––|100||VGS= 20V|
|gfs|Forward Transconductance|56|–––|–––|S|VDS= -10V, ID= -18A|
|Qg|Total Gate Charge|–––|130|–––|nC|VDS= -15V, VGS= -10V, ID= -18A|
|Qg|Total Gate Charge|–––|67|–––||VDS= -15V<br>VGS= -4.5V<br>ID= -18A<br>See Fig.15|
|Qgs1|Pre- Vth Gate-to-Source Charge|–––|12|–––|||
|Qgs2|Post -Vth Gate-to-Source Charge|–––|9.4|–––|||
|Qgd|Gate-to-Drain Charge|–––|29|–––|||
|Qgodr|Gate Charge Overdrive|–––|16.6|–––|||
|Qsw|Switch charge(Qgs2+ Qgd)|–––|38.4|–––|||
|Qoss|Output Charge|–––|59|–––|nC|VDS= -24V, VGS= 0V|
|RG|Gate Resistance|–––|6.5|–––|Ω||
|td(on)|Turn-On DelayTime|–––|29|–––|ns|ID= -18A<br>VDD= -15V, VGS= -4.5V��<br>RG= 1.8Ω<br>See Fig.17|
|tr|Rise Time|–––|160|–––|||
|td(off)|Turn-Off DelayTime|–––|115|–––|||
|tf|Fall Time|–––|110|–––|||
|Ciss|Input Capacitance|–––|7305|–––|pF|VGS= 0V<br>VDS= -15V<br>ƒ= 1.0KHz|
|Coss|Output Capacitance|–––|1780|–––|||
|Crss|Reverse Transfer Capacitance|–––|1030|–––|||
|**Diode Characteristics**|||||||
||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|IS|Continuous Source Current<br>(BodyDiode)|–––|–––|-114|A|showing  the<br>integral reverse<br>p-njunction diode.<br>MOSFET symbol<br>G<br>D<br>S|
|ISM|Pulsed Source Current<br>(BodyDiode) �|–––|–––|-180|||
|VSD|Diode Forward Voltage|–––|–––|-1.2|V|TJ= 25°C, IS= -18A, VGS= 0V�|
|trr|Reverse RecoveryTime|–––|52|78|ns|di/dt = 500A/μs�<br>TJ= 25°C, IF= -18A, ,VDD= -15V|
|Qrr|Reverse RecoveryCharge|–––|315|470|nC||



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## **Absolute Maximum Ratings** 

||**Parameter**<br>**Max.**|**Units**|
|---|---|---|
|PD @TA= 25°C<br>PD@TA =70°C<br>PD @TC= 25°C<br>TP<br>TJ<br>TSTG|Power Dissipation<br>Power Dissipation<br>Power Dissipation<br>PeakSolderingTemperature<br>Operating Junction and<br>Storage Temperature Range<br>1.3<br>270<br>-40  to + 150<br>113<br>2.1<br>~~a~~<br>~~~~~<br>~~aI~~<br>~~ee~~<br>~~es~~|W<br>°C|
|**Thermal Resistance**|||
||**Parameter**<br>**Typ.**<br>**Max.**|**Units**|
|RθJA<br>RθJA<br>RθJA<br>RθJC<br>RθJ-PCB|Junction-to-Ambient<br>–––<br>60<br>Junction-to-Ambient<br>12.5<br>–––<br>Junction-to-Ambient<br>20<br>–––<br>Junction-to-Case<br>,<br>–––<br>1.1<br>Junction-to-PCB Mounted<br>1.0<br>–––<br>~~Se~~<br>~~ake~~<br>~~>~~<br>~~eS~~<br>~~a~~|°C/W|
||Linear DeratingFactor<br>0.02|W/°C|



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100<br>D = 0.50<br>10 ee 0.20 ne nee, ee ee | | |<br>0.10<br>0.05<br>1 0.02<br>0.01<br>NN R 1R 1 R 2R 2 R 3R 3 R 4 R 4 | Ri (°C/W) τ i (sec)<br>0.1 τ J τ J τ A τ A 2.7194    0.0138004<br>0.01 || ee el τ 1Ci=  τ 1 τ i / Ri τ 2 τ 2 τ 3 τ 3 τ 4 τ 4 | 23.1599  55.76656310.2579  0.6520047 i<br>Ci=  τ i / Ri 23.6469  7.7259631<br>a em ee ee ]<br>Notes:<br>0.001 Et | Leet SINGLE PULSE EN || a<br>( THERMAL RESPONSE ) 1. Dut2. Peak Tj y Factor D = t1/t2= P dm x Zthja + Tc<br>A A<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 3.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

R θ is measured at TJ of approximately 90°C. 

6) Surface mounted on 1 in. square Cu board  (still air). 

Mounted on minimum footprint full size ® Mounted to a PCB with small board with metalized back and with small (©) clip heatsink (still air) clip heatsink (still air) 

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1000<br>VGS<br>TOP           -10V<br>-5.0V<br>100 -4.5V -3.5V<br>-3.25V<br>-3.0V<br>-2.75V<br>10 BOTTOM -2.5V<br>1<br>-2.5V<br>0.1<br>≤ 60μs PULSE WIDTH<br>Tj = 25 ° C<br>0.01<br>0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>1000<br>VDS = -15V<br>≤ 60μs PULSE WIDTH<br>100<br>10<br>TJ = 150°C<br>TJ = 25 ° C<br>TJ = -40°C<br>1.0<br>1 2 3 4 5<br>-VGS, Gate-to-Source Voltage (V)<br>-ID, Drain-to-Source Current  (A)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Transfer Characteristics 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>C = C + C<br>oss   ds  gd<br>10000 Ciss<br>C<br>oss<br>C<br>rss<br>1000<br>100<br>1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Capacitance vs.Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           -10V<br>-5.0V<br>-4.5V<br>-3.5V<br>-3.25V<br>-3.0V<br>100 -2.75V<br>BOTTOM -2.5V<br>10<br>-2.5V<br>≤ 60μs PULSE WIDTH<br>Tj = 150°C<br>1<br>0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Output Characteristics<br>1.6<br>I = -22A<br>D<br>1.4 V GS  = -10V<br>VGS = -4.5V<br>1.2<br>1.0<br>0.8<br>0.6<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>  Normalized On-Resistance vs. Temperature<br>12<br>TJ = 25°C<br>Vgs = -3.5V<br>10<br>Vgs = -4.5V<br>Vgs = -5.0V<br>Vgs = -6.0V<br>8 Vgs = -8.0V<br>Vgs = -10V<br>Vgs = -12V<br>6 Vgs = -15V<br>4<br>2<br>0 20 40 60 80 100 120 140 160 180<br>-ID, Drain Current (A)<br>) Ω<br>Typical RDS(on) (m<br>-ID, Drain-to-Source Current (A)<br>Typical RDS(on) (Normalized)<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

**Fig 9.** Typical On-Resistance vs. Drain Current and Gate Voltage 

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1000<br>100<br>TJ = 150°C<br>TJ = 25 ° C<br>T J  = -40°C<br>10<br>Se ee<br>1<br>VGS = 0V<br>0<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>-ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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-VSD, Source-to-Drain Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Source-Drain Diode Forward Voltage 

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25<br>STITT)<br>20<br>Pi<br>15 PPESeaNG|<br>10<br>TTR<br>5<br>|<br>0 tt ft<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>-ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Drain Current vs. Case Temperature 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100 100μsec<br>1msec<br>10<br>10msec<br>1 TE<br>DC<br>0.1 Tc = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.01<br>0.01 0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 11.   Maximum Safe Operating  Area<br>2.6<br>2.4<br>AEE<br>2.2<br>ENunSsnen<br>2.0<br>PESSORRTE<br>1.8 I D  = -150μA<br>ID = -250μA PRE<br>1.6<br>ID = -1.0mA<br>1.4 ID = -1.0A<br>SEERA<br>1.2<br>1.0 “COCR<br>CEE<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>-Typical VGS(th) Gate threshold Voltage (V)<br>-ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 13.** Typical Threshold Voltage vs. Junction Temperature 

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2500<br>ID<br>TOP      -1.6A<br>2000 -2.3A<br>BOTTOM -18A<br>A \<br>1500<br>SALE EELEL<br>1000<br>PSX<br>500<br>RS<br>CPS<br>0 |] Se |<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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L<br>VCC<br>DUT<br>0<br>20K1K SS<br>**----- End of picture text -----**<br>


**Fig 17a.** Gate Charge Test Circuit 

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L<br>VDS<br>RG D.U.T V<br>L. DD<br>IAS<br>DRIVER<br>i tp 0.01 Ω<br>15V<br>**----- End of picture text -----**<br>


**Fig 18a.** Unclamped Inductive Test Circuit 

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-<br>+<br> 1<br> 0.1 %<br>**----- End of picture text -----**<br>


**Fig 19a.** Switching Time Test Circuit 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**Fig 17b.** Gate Charge Waveform 

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IAS<br>\ ||<br>‘|<br>¢— tp<br>V(BR)DSS<br>**----- End of picture text -----**<br>


**Fig 18b.** Unclamped Inductive Waveforms 

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td(on) tr td(off) tf<br>VGS<br>a<br>10%<br>90% VVX<br>VDS<br>**----- End of picture text -----**<br>


**Fig 19b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T* + — P.W. — Period D = _—— Period<br>VGS=10V<br>   •<br>c c; _<br>•  GroundPlane<br>[ ©) - Circuit Layout Considerations |<br>+ •  CurrentowLeakageTransformerInductance ) D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>o - 38 L - ® + Current r Current di/dt JN<br>00) ® D.U.T. VDS Waveform Diode Recovery<br>dv/dt \ my VDD<br>•  Re-Applied<br>•  riversame type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re (ae •  i/dtcontrolled by Rg Vp p - In at b e<br>•  D.U.T. - Device Under Test e e ee<br>Ripple  ≤ 5% ISD<br>sp controlled byDutyFactor"D" ® t<br>**----- End of picture text -----**<br>


## **Fig 20.** 

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or P-Channel HEXFET ower MOSFETs<br>**----- End of picture text -----**<br>


® 

® 

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G=GATE<br>D=DRAIN<br>(2X) S=SOURCE<br>145<br>23<br>7 So 77 <<br>GW WS<br>D D ax<br>S<br>G E Q\  G A<br>7 y Y — Tp —T<br>S |<br>D D<br>Vn Ve<br>**----- End of picture text -----**<br>


® 

® 

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DIMENSIONS<br>METRIC IMPERIAL<br>ee CODE MIN MAX MIN MAX<br>a A a 6.25 6.35 0.246 ee 0.250<br>a B a 4.80 5.05 0.189 ee 0.199<br>C 3.85 3.95 0.152 0.156<br>D 0.35 0.45 0.014 0.018<br>a E a 0.68 0.72 0.027 0.028<br>a a ee<br>a F a 0.68 0.72 0.027 ee 0.028<br>G 1.38 1.42 0.054 0.056<br>| H 0.80 0.84 0.031 0.033<br>J 0.38 0.42 0.015 0.017<br>K 0.88 1.02 0.035 0.040<br>L 2.28 2.42 0.090 0.095<br>ee a M a 0.59 0.70 ee 0.023 ee 0.028 ee<br>es R 0.03 0.08 0.001 0.003<br>P 0.08 0.17 0.003 0.007<br>**----- End of picture text -----**<br>


Dimensions are shown in millimeters (inches) 

**==> picture [240 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
GATE MARKING<br>LOGO<br>PART NUMBER<br>BATCH NUMBER<br>DATE CODE<br>Line above the last character of<br>the date code indicates "Lead-Free"<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

NOTE: Controlling dimensions in mm 

Std reel quantity is 4800 parts. (ordered as IRF9383MTRPBF). For 1000 parts on 7" reel, order   IRF9383MTR1PBF 

|reel, order   IRF9383MTR1PBF|reel, order   IRF9383MTR1PBF|reel, order   IRF9383MTR1PBF|reel, order   IRF9383MTR1PBF|reel, order   IRF9383MTR1PBF|
|---|---|---|---|---|
|**REEL DIMENSIONS**|||||
|STANDARD OPTION (QTY 4800)|||||
|STANDARD OPTION (QTY 4800)|METRIC<br>STANDARD OPTION (QTY 4800)||IMPERIAL<br>STANDARD OPTION (QTY 4800)||
|CODE|MIN|MAX|MIN|MAX|
|A|330|N.C<br>12.992|12.992|N.C|
|B|20.2|N.C|0.795|N.C|
|C|12.8|13.2|0.504|0.520|
|D|1.5|N.C|0.059|N.C|
|E|100.0|N.C|3.937|N.C|
|F|N.C|18.4|N.C|0.724|
|G|12.4|14.4|0.488|0.567|
|H|11.9|15.4|0.469|0.606|



## LOADED TAPE FEED DIRECTION 

||DIMENSIONS<br>~~Po~~|
|---|---|
||IMPERIAL<br>METRIC|
|NOTE: CONTROLLING<br>DIMENSIONS IN MM|CODE<br>A<br>B<br>C<br>MIN<br>0.311<br>0.154<br>0.469<br>MAX<br>8.10<br>4.10<br>12.30<br>MIN<br>7.90<br>3.90<br>11.90<br>MAX<br>0.319<br>0.161<br>0.484<br>~~a ee~~<br>~~ee~~<br>~~ee~~<br>~~eeee~~<br>~~a ee~~|
||D<br>0.215<br>5.55<br>5.45<br>0.219<br>~~a ee~~|
||E<br>0.201<br>5.30<br>5.10<br>0.209<br>~~a ee~~|
||F<br>G<br>H<br>0.256<br>0.059<br>0.059<br>6.70<br>N.C<br>1.60<br>6.50<br>1.50<br>1.50<br>0.264<br>N.C<br>0.063<br>~~a ee~~<br>~~ee eeee~~<br>~~a~~|



Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

## **Qualification Information†** 

|**Qualification Information†**<br>**†**|||
|---|---|---|
|Qualification level|Consumer††||
||(per JEDEC JESD47F†††guidelines)||
|Moisture Sensitivity Level|DirectFET®|MSL1<br>(per JEDEC J-STD-020D†††)|
|RoHS Compliant|Yes||



T Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability 

Tt Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ 

Applicable version of JEDEC standard at the time of product release. 

|**Date**<br>**Revision History**|**Comments**<br>**Revision History**|
|---|---|
|2/17/2014|•Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option  (EOL notice #264).<br>•Updated data sheet with new IR corporate template.|
|2/25/2014|•Change MSL3 to MSL1, on page 9.|
|6/2/2015|Change MSL3 to MSL1, on page 9.<br>•Updated  schematics from "N-Channel" to "P-Channel" on page 1.<br>•Updated"IFX logo"on page 1 and page 10..|



## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF9383MTRPBF/power-mosfet-p-channel-30-v-22-a-2900-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf9383mtrpbf/mosfet-p-ch-160v-22a-directfet/dp/2781122RL)
---

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