# Power MOSFET, P Channel, 100 V, 19 A, 0.23 ohm, TO-204AA, Through Hole

![Product image](https://novapart.co/image/farnell:664110/)

**URL**: https://novapart.co/products/IRF9140/power-mosfet-p-channel-100-v-19-a-023-ohm-to-204aa
**SKU**: IRF9140
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €6.6800
**Stock**: 10+

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 2Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 125W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-204AA |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 19A |
| Drain Source On State Resistance | 0.23ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:664110/)

PD - 93976A 

## **REPETITIVE AVALANCHE AND dv/dt RATED**  **HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)** 

## **IRF9140 100V, P-CHANNEL** 

## **Product Summary** 

|**Part Number   BVDSS    R**|**Part Number   BVDSS    R**|**Part Number   BVDSS    RDS(on)**|**ID**|
|---|---|---|---|
|IRF9140         -100V       0.2|IRF9140         -100V       0.2|IRF9140         -100V       0.2Ω-18A|-18A|



The HEXFET[] technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. 

The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. 

They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. 

**==> picture [22 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-3<br>**----- End of picture text -----**<br>


## **Features:** 

Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling 

## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**<br>a|**Absolute Maximum Ratings**<br>Ge|||
|---|---|---|---|
|a|**Parameter**<br>Ge||**Units**|
|ID@ VGS= 0V, TC= 25°C<br>a<br>nn|Continuous Drain Current<br>Ge<br>nn|-18<br>nn|A|
|ID @ VGS = 0V, TC = 100°C<br>nn|Continuous Drain Current<br>nn|-11<br>(||
|IDM<br>nn<br>~~a~~|Pulsed Drain Current➀<br>nn|-72<br> (||
|PD @ TC = 25°C<br>~~a~~<br>~~nn~~|Max. Power Dissipation<br>~~nn~~|125<br>~~nn~~|W<br>~~nn~~|
|~~nn~~<br>~~nn~~|Linear DeratingFactor<br>~~nn~~<br>~~nn~~|1.0<br>~~nn~~<br>~~nn~~|W/°C<br>~~nn~~<br>~~nn~~|
|VGS<br>~~nn~~<br>~~nn~~|Gate-to-Source Voltage<br>~~nn~~<br>~~nn~~|±20<br>~~nn~~<br>~~nn~~|V<br>~~nn~~<br>~~nn~~|
|EAS<br>~~nn~~<br>~~nn~~|Single Pulse Avalanche Energy ➁<br>~~nn~~<br>~~nn~~|500<br>~~nn~~<br>~~nn~~|mJ<br>~~nn~~<br>~~nn~~|
|IAR<br>~~nn~~<br>~~nn~~|Avalanche Current➀<br>~~nn~~<br>~~nn~~|-18<br>~~nn~~<br>~~nn~~|A<br>~~nn~~<br>~~nn~~|
|EAR<br>~~nn~~<br>~~nn~~|Repetitive Avalanche Energy ➀<br>~~nn~~<br>~~nn~~|12.5<br>~~nn~~<br>~~nn~~|mJ<br>~~nn~~<br>~~nn~~|
|dv/dt<br>~~nn~~<br>~~nn~~<br>~~rr~~|Peak Diode Recoverydv/dt➂<br>~~nn~~<br>~~nn~~<br>~~ee~~|-5.5<br>~~nn~~<br>~~nn~~<br>~~ee~~|V/ns<br>~~nn~~<br>~~nn~~<br>~~ee~~|
|TJ<br>TSTG<br>~~nn~~<br>~~rr~~|Operating Junction<br>Storage Temperature Range<br>~~nn~~<br>~~ee~~|-55 to 150<br>~~nn~~<br>~~ee~~|oC<br>~~nn~~<br>~~ee~~|
|~~rr~~<br>~~a~~|Lead Temperature<br>~~ee~~<br>~~a~~|300(0.063 in.(1.6mm)from case for 10s)<br>~~ee~~<br>~~a~~||
|~~rr ~~<br>~~a~~<br>~~LZ~~|Weight<br> ~~ee~~<br>~~a~~<br>~~LZ~~|11.5(typical)<br>~~ee~~<br>~~a~~<br>~~LZ~~|g<br>~~ee~~<br>~~LZ~~|



For footnotes refer to the last page 

www.irf.com 

1 

01/22/01 

## **IRF9140** 

## **Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)** 

||**Parameter**|**Min**|**Typ**|**Max **|**Units**|**Test Conditions**|
|---|---|---|---|---|---|---|
|BVDSS<br>~~ee~~|Drain-to-Source Breakdown Voltage|-100<br>~~O~~|—|—|V|VGS= 0V, ID= -1.0mA|
|∆BVDSS/∆TJ<br>~~a~~<br>~~ee~~|Temperature Coefficient of Breakdown<br>Voltage<br>~~a~~|—<br>~~a~~<br>~~O~~|-0.087<br>~~a~~|—<br>~~a~~|V/°C<br>~~a~~|Reference to 25°C, ID = -1.0mA<br>~~a~~|
|RDS(on)<br>~~ee~~|Static Drain-to-Source On-State<br>Resistance<br>~~|~~|—<br>~~O~~<br>~~|~~<br>~~|~~|—<br>~~[||~~|0.2<br>~~[||~~|V<br>Ω<br>|VGS = -10V, ID = -11A➃<br>~~ee~~|
|||—<br>~~O~~<br>~~|~~<br>~~|~~|—     0.23<br>~~[||~~|—     0.23 <br>~~[||~~||VGS=-10V, ID= -18A➃<br>~~ee~~|
|VGS(th)<br>~~ee~~<br>~~Pee~~<br>~~es~~|Gate Threshold Voltage<br>~~|~~<br>~~Pee~~<br>~~nD~~|-2.0<br>~~O~~<br>~~|~~<br>~~|~~<br>~~Pee~~<br>~~nD OD~~|—<br>~~[||~~<br>~~Pee~~<br>~~OD~~|-4.0<br>~~[|| ~~<br>~~Pee~~<br>~~GOD~~|V<br> <br>~~Pee~~<br>~~GOD~~|VDS= VGS, ID = -250µA<br> ~~ee~~<br>~~Pee~~<br>~~(OO~~|
|~~es~~|~~nD~~|~~nD OD~~|~~OD~~|~~GOD~~|~~GOD~~|~~(OO~~|
|gfs<br>~~es~~<br>~~Pefo~~|Forward Transconductance<br>~~nD~~<br>~~fo~~<br>~~EE~~|6.2<br>~~nD OD~~<br>~~EE~~|—<br>~~OD~~<br>~~EE~~|—<br>~~GOD~~<br>~~EE~~|S ( )<br>Ω<br>~~GOD~~|VDS > -15V, IDS = -11A➃<br>~~(OO~~|
|IDSS<br>~~Pefo~~|Zero Gate Voltage Drain Current<br>~~fo~~<br>~~EE~~|—<br>—<br>~~EE~~|—<br>—<br>~~EE~~|-25<br>-250<br>~~EE~~|µA|VDS= -80V, VGS=0V<br>VDS = -80V<br>VGS= 0V, TJ= 125°C|
|IGSS<br>IGSS<br>~~Pe fo~~|Gate-to-Source Leakage Forward<br>Gate-to-Source Leakage Reverse<br>~~fo~~<br>~~EE~~|—<br>—<br>~~EE~~|—<br>—<br>~~EE~~|-100<br>100<br>~~EE~~|nA|VGS = -20V<br>VGS= 20V|
|Qg<br>~~On~~|Total Gate Charge<br>~~On~~|31<br>~~On~~|—<br>~~On~~|60<br>~~On~~|nC<br>~~On~~|VGS =-10V, ID = -18A<br>VDS= -50V<br>~~On~~|
|Qgs<br>Qgd<br>~~On~~<br>~~es~~|Gate-to-Source Charge<br>Gate-to-Drain(‘Miller’)Charge<br>~~On~~|3.7<br>7.0<br>~~On~~|—<br>—<br>~~On~~|13<br>35.2<br>~~On~~|||
|td(on)<br>~~es~~<br>es|Turn-On Delay Time|—|—|35|n s|VDD = -50V, ID = -18A,<br>RG =9.1Ω|
|tr<br>~~es~~<br>es|Rise Time|—|—|85|||
|td(off)<br>es|Turn-Off Delay Time|—|—|85|||
|tf<br>LS + LD<br>a<br>es|Fall Time<br>Total Inductance<br>ee|—<br>—<br>ee|—<br>6.1|65<br>—|nH|Measured from drain lead (6mm/0.25in. from<br>package) to source lead (6mm/0.25in. from<br>package)|
|Ciss<br>es<br>ee<br>ee|Input Capacitance<br>es<br>|—<br>es<br>**G**G<br>|1400<br>es<br>G<br>|es<br>|pF|VGS = 0V, VDS = -25V<br>f = 1.0MHz|
|Coss<br>es<br>ee<br>ee|Output Capacitance<br>es<br>|—<br>es<br>**G**G<br><br>e|600<br>es<br>G<br><br>es|—<br>es<br>|||
|Crss<br>ee<br>ee|Reverse Transfer Capacitance<br>es<br>es|—<br>es<br>**G**G<br>es<br>e|200<br>es<br>G<br>es<br>es|—<br>es<br>es|||



## **Thermal Resistance** 

|**Thermal Resistance**|**Thermal Resistance**||||||
|---|---|---|---|---|---|---|
||**Parameter**|**Min **|**Typ **|**Max**|**Units**|**Test Conditions**|
|RthJC|Junction-to-Case|—|—|1.0|Soldered to a 2” square copper-clad board<br>°C/W||
|RthJA|Junction-to-Ambient|—|—|30||Soldered to a 2” square copper-clad board|



**Note: Corresponding Spice and Saber models are available on the G&S Website.** For footnotes refer to the last page 

www.irf.com 

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**IRF9140** 

**Fig 1.** Typical Output Characteristics 

**Fig 3.** Typical Transfer Characteristics 

**Fig 2.** Typical Output Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

www.irf.com 

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**IRF9140** 

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Aee r 13 a& b<br>10 30 30050<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

**Fig 8.** Maximum Safe Operating Area 

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**IRF9140** 

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RD<br>VDS<br>VGS<br>a D.U.T. |<br>RG<br>+- VDD<br>|<br>-10V<br>Pulse Width ≤ 1 µs<br>Duty Factor  : ≤ 0.1 % =<br>Fig 10a.   Switching Time Test Circuit<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current Vs. Case Temperature 

**==> picture [138 x 87] intentionally omitted <==**

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td(on) tr td(off) tf<br>VGS<br>10%<br>anfoa<br>V<br>90% \ /\<br>VDS<br>**----- End of picture text -----**<br>


**Fig 10b.** Switching Time Waveforms 

**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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**IRF9140** 

**==> picture [154 x 115] intentionally omitted <==**

**----- Start of picture text -----**<br>
V DS L<br>R G D.U.T VDD<br>IA S M— |<br>Ee - 10V20V DRIVER<br>tp 0.01Ω<br>se<br>15V<br>**----- End of picture text -----**<br>


## **Fig 12a.** Unclamped Inductive Test Circuit 

**==> picture [152 x 121] intentionally omitted <==**

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I AS<br>,<br>|<br>tp<br>V (BR)DSS<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

**==> picture [411 x 139] intentionally omitted <==**

**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>QG -12V12V .2µF<br>-10V .3µF<br>-<br>TT QGS QGD The D.U.T. | +VDS<br>VG VGS<br>-3mA PL<br>RS (ay |<br>Ort.<br>IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

6 

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**IRF9140** 

## **Foot Notes:** 

- ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. 

- ➁ VDD = -25V, starting TJ = 25°C, Peak IL = -18A, 

- ➂ ISD ≤ -18A, di/dt ≤ -100A/ µ s, VDD ≤ -100V, TJ ≤ 150°C Suggested RG =9.1 Ω 

- ➃ Pulse width ≤ 300 µ s; Duty Cycle ≤ 2% 

## **Case Outline and Dimensions —TO-204AA (Modified TO-3)** 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 **IR EUROPEAN REGIONAL CENTRE:** 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 **IR CANADA:** 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 **IR GERMANY:** Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 **IR ITALY:** Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 **IR JAPAN:** K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 **IR SOUTHEAST ASIA:** 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65  (0)838 4630 **IR TAIWAN:** 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673  Tel: 886-(0)2 2377 9936 _Data and specifications subject to change without notice. 01/01_ 

www.irf.com 

7 



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- [Supplier page](https://es.farnell.com/infineon/irf9140/mosfet-p-to-3/dp/664110)
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