# Power MOSFET, N Channel, 30 V, 24 A, 2800 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2725926/)

**URL**: https://novapart.co/products/IRF8788TRPBF/power-mosfet-n-channel-30-v-24-a-2800-ohm-soic
**SKU**: IRF8788TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3650
**Stock**: 1000+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 24A |
| Drain Source On State Resistance | 2800µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725926/)

97137A 

## IRF8788PbF 

## **Applications** 

Synchronous MOSFET for Notebook Processor Power Synchronous Rectifier MOSFET for Isolated DC-DC Converters 

HEXFET Power MOSFET 

**VDSS RDS(on) max Qg** ~~Ff~~ **30V** ~~a~~ **2.8m @VGS = 10V 44nC** 

## **Benefits** 

Very Low Gate Charge Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS  Max. Gate Rating 100% tested for Rg Lead-Free 

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## **Description** 

The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications. 

## **Absolute Maximum Ratings** 

|~~a~~|**Parameter**<br>~~a~~|**Max.**|**Units**|
|---|---|---|---|
|VDS<br>~~a~~<br>~~———————~~|Drain-to-Source Voltage<br>~~a~~<br>~~———————~~|30<br>~~ee~~|V<br>~~ee~~|
|VGS<br>~~i~~<br>~~———————~~|Gate-to-Source Voltage<br>~~i~~<br>~~———————~~|±20<br>~~ee~~||
|ID@ TA= 25°C<br>~~———————~~|Continuous Drain Current, VGS@ 10V<br>~~———————~~|24<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|ID@ TA= 70°C<br>~~———————~~<br>~~A~~|Continuous Drain Current, VGS@ 10V<br>~~———————~~<br>~~A~~|19<br>~~ee~~<br>~~A~~||
|IDM<br>~~———————~~<br>~~a~~<br>~~oi~~|Pulsed Drain Current<br>~~———————~~<br>~~a~~<br>~~oi~~|190<br>~~ee~~<br>~~a~~<br>~~ee~~||
|PD@TA= 25°C<br>~~———————~~<br>~~a~~<br>~~oi~~|Power Dissipation<br>~~———————~~<br>~~a~~<br>~~oi~~|2.5<br>~~ee~~<br>~~a~~<br>~~ee~~|W<br>~~ee~~<br>~~ee~~|
|PD@TA= 70°C<br>~~oi~~|Power Dissipation<br>~~oi~~|1.6<br>~~ee~~||
|~~oi~~|Linear Derating Factor<br>~~oi~~|0.02<br>~~ee~~<br>~~ee~~|W/°C<br>~~ee~~<br>~~ee~~|
|TJ<br>TSTG<br>~~a ee~~|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55  to + 150<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~|



Notes through are on page 9 www.irf.com 

1 8/18/08 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~es~~|**Parameter**<br>~~GO~~|**Min.**<br>~~GO~~|**Typ.**<br>~~GO~~|**Max. **<br>~~GO CO~~|**Units**<br>~~CO~~|**Conditions**<br>~~CO~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~es~~<br>~~a ~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~GO~~<br> ~~es~~<br>~~ee~~|30<br>~~GO~~<br>~~es~~<br>~~Pn~~|–––<br>~~GO~~<br>~~es~~<br>~~QO~~<br>~~GO~~|–––<br>~~GO CO~~<br>~~es~~<br>~~Gs~~<br>~~GO~~|V<br>~~CO~~<br>~~es~~<br>~~**G**O~~|VGS= 0V,ID= 250μA<br>~~CO~~<br>~~es~~<br>~~O~~|
|ΔΒVDSS/ΔTJ<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~ee~~|–––<br>~~Pn~~|0.024<br>~~QO~~<br>~~GO~~|–––<br>~~Gs~~<br>~~GO~~|V/°C<br>~~**G**O~~|Reference to 25°C,ID= 1mA<br>~~O~~|
|RDS(on)<br>~~es ~~<br>~~|]~~|Static Drain-to-Source On-Resistance<br> ~~ee~~<br>~~|]~~|–––<br>~~Pn ~~<br>~~|]~~|2.3<br> ~~QO ~~<br>~~GO~~<br>~~|]~~|2.8<br> ~~Gs~~<br>~~GO~~<br>~~|]~~|mΩ<br>~~**G**O~~<br>~~|]~~|VGS= 10V,ID= 24A<br>~~O~~<br>~~|]~~|
|||–––<br>~~|]~~<br>~~PTT~~|3.04<br>~~|]~~<br>~~PTT~~|3.8<br>~~|]~~<br>~~PTT~~||VGS= 4.5V,ID= 19A<br>~~|]~~|
|VGS(th)<br>~~|]~~<br>~~++~~<br>~~es~~|Gate Threshold Voltage<br>~~|]~~<br>~~+++;~~<br>~~es~~|1.35<br>~~|]~~<br>~~PTT~~<br>~~+;~~<br>~~s~~|1.80<br>~~|]~~<br>~~PTT~~<br>~~+;~~<br>~~s~~|2.35<br>~~|]~~<br>~~PTT~~<br>~~+;~~<br>~~s~~|V<br>~~|]~~<br>~~+;~~<br>~~s~~|VDS= VGS, ID= 100μA<br>~~|]~~<br>~~+;~~|
|ΔVGS(th)<br>~~++~~<br>~~es~~|Gate Threshold Voltage Coefficient<br>~~+++;~~<br>~~es~~|–––<br>~~+;~~<br>~~s~~|-6.59<br>~~+;~~<br>~~s~~|–––<br>~~+;~~<br>~~s~~|mV/°C<br>~~+;~~<br>~~s~~||
|IDSS<br>~~++~~<br>~~es~~<br>~~|]~~|Drain-to-Source Leakage Current<br>~~+++;~~<br>~~es~~<br>~~|]~~|–––<br>~~+;~~<br>~~s~~<br>~~|]~~|–––<br>~~+;~~<br>~~s~~<br>~~|]~~|1.0<br>~~+;~~<br>~~s~~<br>~~|]~~|μA<br>~~+;~~<br>~~s~~<br>~~|]~~<br>|VDS= 24V,VGS= 0V<br>~~+;~~<br>~~|]~~|
|||–––<br>~~|]~~<br>~~PTT~~|–––<br>~~|]~~<br>~~PTT~~|150<br>~~|]~~<br>~~PTT~~||VDS= 24V,VGS= 0V,TJ= 125°C<br>~~|]~~<br>~~PO~~|
|IGSS<br>~~|]~~<br>~~_—————————————_——EE~~|Gate-to-Source Forward Leakage<br>~~|]~~<br>~~_—————————————_——EE~~<br>~~ee~~|–––<br>~~|]~~<br>~~PTT~~<br>~~_—————————————_——EE~~<br>~~ee~~|–––<br>~~|]~~<br>~~PTT~~<br>~~_—————————————_——EE~~|100<br>~~|]~~<br>~~PTT ~~<br>~~_—————————————_——EE~~|nA<br>~~|]~~<br> <br>~~_—————————————_——EE~~|VGS= 20V<br>~~|]~~<br> ~~PO~~<br>~~_—————————————_——EE~~<br>~~PO~~|
||Gate-to-Source Reverse Leakage<br>~~_—————————————_——EE~~<br>~~ee~~|–––<br>~~_—————————————_——EE~~<br>~~ee~~|–––<br>~~_—————————————_——EE~~|-100<br>~~_—————————————_——EE~~||VGS= -20V<br>~~_—————————————_——EE~~<br>~~PO~~|
|gfs<br>~~_—————————————_——EE~~<br>~~es~~<br>~~es~~<br>~~ee~~|Forward Transconductance<br>~~_—————————————_——EE~~<br>~~ee~~<br>~~es~~<br><br>|95<br>~~_—————————————_——EE~~<br>~~ee~~<br>~~es~~<br>~~On~~<br><br>~~ee~~<br>|–––<br>~~_—————————————_——EE~~<br>~~es~~<br>~~QO~~<br><br>|–––<br>~~_—————————————_——EE~~<br>~~es~~<br>~~Gs~~<br><br>|S<br>~~_—————————————_——EE~~<br>~~es~~|VDS= 15V,ID= 19A<br>~~_—————————————_——EE~~<br>~~PO~~<br>~~es~~|
|Qg<br>~~es~~<br>~~ee~~|Total Gate Charge<br>~~ee~~<br>|–––<br>~~On~~<br>~~ee~~<br>~~ee~~<br>|44<br>~~QO~~<br>~~ee~~<br>|66<br>~~Gs~~<br>~~ee~~<br>|nC<br>~~GO~~|See Figs. 17a & 17b<br>ID= 19A<br>VGS= 4.5V<br>VDS= 15V<br>~~GO~~|
|Qgs1<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~ee~~|Pre-Vth Gate-to-Source Charge<br>~~ee~~<br>~~**ee**~~<br>|–––<br>~~On ~~<br>~~ee~~<br>~~ee~~<br>~~**ee**~~<br>~~ee~~<br>|12<br> ~~QO ~~<br>~~ee~~<br>~~**ee**~~<br>|–––<br> ~~Gs~~<br>~~ee~~<br>~~**ee**~~<br>|||
|Qgs2<br>~~ee~~<br>~~es~~<br>~~ee~~|Post-Vth Gate-to-Source Charge<br>~~**ee**~~<br>|–––<br>~~ee~~<br>~~**ee**~~<br>~~ee~~<br>|4.7<br>~~**ee**~~<br>|–––<br>~~**ee**~~<br>|||
|Qgd<br><br>~~es~~<br>~~ee~~<br>~~es~~<br>~~ee~~|Gate-to-Drain Charge<br>~~**ee**~~<br>~~**ee**~~<br>|–––<br>~~**ee**~~<br>~~ee~~<br>~~**ee**~~<br>~~ee~~<br>|14<br>~~**ee**~~<br>~~**ee**~~<br>|–––<br>~~**ee**~~<br>~~**ee**~~<br>|||
|Qgodr<br>~~ee~~<br>~~es~~<br>~~ee~~|Gate Charge Overdrive<br>~~**ee**~~<br>|–––<br>~~ee~~<br>~~**ee**~~<br>~~ee~~<br>|13.3<br>~~**ee**~~<br>|–––<br>~~**ee**~~<br>|||
|Qsw<br><br>~~es~~<br>~~ee~~<br>~~es~~|Switch Charge(Qgs2+ Qgd)<br>~~**ee**~~<br>~~**e**e~~|–––<br>~~**ee**~~<br>~~ee~~<br>~~e~~|18.7<br>~~**ee**~~<br>~~e~~<br>~~GO~~|–––<br>~~**ee**~~<br>~~e~~<br>~~GO~~|||
|Qoss<br>~~ee~~<br>~~es~~|Output Charge<br>~~**e**e~~|–––<br>~~ee~~<br>~~e~~|22<br>~~e~~<br>~~s~~<br>~~GO~~|–––<br>~~e~~<br>~~s~~<br>~~GO~~|nC<br>~~s~~<br>~~GO~~|VDS= 16V,VGS= 0V<br>~~s~~<br>~~GO~~|
|Rg<br><br>~~es~~<br>~~es~~<br>~~ee~~|Gate Resistance<br>~~**e**e~~<br>~~es~~|–––<br>~~e~~<br>~~es~~<br>~~On~~|0.54<br>~~e~~<br>~~s~~<br>~~GO~~<br>~~es~~<br>~~QO~~|1.09<br>~~e~~<br>~~s~~<br>~~GO ~~<br>~~es~~<br>~~Gs~~|Ω<br>~~s~~<br> ~~GO~~<br>~~es~~|~~s~~<br>~~GO~~<br>~~es~~|
|td(on)<br>~~ee~~<br>~~es~~|Turn-On DelayTime<br>~~ee~~|–––<br>~~On~~<br>~~ee~~|23<br>~~QO~~<br>~~ee~~|–––<br>~~Gs~~<br>~~ee~~|ns|RG= 1.8Ω<br>VDD= 15V, VGS= 4.5V<br>ID= 19A<br>See Fig. 15a & 15b|
|tr<br>~~ee~~<br>~~es~~<br>~~ee~~|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>~~On ~~<br>~~ee~~<br>~~ee~~|24<br> ~~QO ~~<br>~~ee~~<br>~~ee~~|–––<br> ~~Gs~~<br>~~ee~~<br>~~ee~~|||
|td(off)<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~ee~~|Turn-Off DelayTime<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|23<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|||
|tf<br>~~ee~~<br>~~es~~<br>~~ee~~|Fall Time<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|11<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>|||
|Ciss<br>~~es~~<br>~~ee~~<br>~~es~~|Input Capacitance<br>~~ee~~<br>~~**ee**~~|–––<br>~~ee~~<br>~~ee~~<br>~~**ee**~~<br>~~ee~~|5720<br>~~ee~~<br>~~**ee**~~|–––<br>~~ee~~<br>~~**ee**~~|pF|VGS= 0V<br>VDS= 15V<br>ƒ= 1.0MHz|
|Coss<br>~~ee~~<br>~~es~~|Output Capacitance<br>~~**ee**~~|–––<br>~~ee~~<br>~~**ee**~~<br>~~ee~~|980<br>~~**ee**~~|–––<br>~~**ee**~~|||
|Crss<br><br>~~es~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~**ee**~~<br>~~ee~~|–––<br>~~**ee**~~<br>~~ee~~<br>~~ee~~|450<br>~~**ee**~~<br>~~ee~~|–––<br>~~**ee**~~<br>~~ee~~|||



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1000 1000<br>VGS VGS<br>TOP           10V TOP           10V<br>5.0V 5.0V<br>4.5V 4.5V<br>100 LAA —___— 3.5V | 3.5V<br>3.0V 3.0V<br>2.7V 2.7V<br>2.5V 100 2.5V<br>zee Sate BOTTOM 2.3V fg BOTTOM 2.3V<br>10<br>So Grr<br>eens eee ee el ee<br>1<br>ST) 10 eet<br>mani ≤60μs PULSE WIDTH eeeet<br>0.1 Tj = 25°C<br>2.3V<br>So 2.3V eel = ES ≤60μs PULSE WIDTH<br>Se e Tj = 150°C<br>0.01 1<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 2.0<br>————<br>VDS = 15V po ID = 24A<br>≤60μs PULSE WIDTH VGS = 10V<br>100<br>ye ! 1.5 Le<br>TJ = 150°C<br>10<br>e e4 oo ee ae<br>e e 1.0 Ler LL<br>1 n y a TJ = 25°C pa<br>ff ft 0.5 FLEE ELLE<br>0.1<br>1 2 3 4 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

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100000<br>VGS   = 0V,       f = 1 MHZGS   = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ<br>= Ciss iss    = Cgs + Cgd,  Cds SHORTEDgs + Cgd,  Cds SHORTED+ Cgd,  Cds SHORTEDgd,  Cds SHORTED,  Cds SHORTEDds SHORTEDSHORTED<br>Crss  rss    = Cgd gd<br>Coss  oss   = Cds + Cgdds + Cgd+ Cgdgd<br>SIeIee<br>10000<br>Cississ<br>S o Ih<br>Cossoss eat eee<br>1000<br>fee Crssrss s eo<br>P T TF<br>ell emmeniil|<br>eee<br>100<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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100000 16<br>VGS   = 0V,       f = 1 MHZGS   = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ<br>= Ciss iss    = Cgs + Cgd,  Cds SHORTEDgs + Cgd,  Cds SHORTED+ Cgd,  Cds SHORTEDgd,  Cds SHORTED,  Cds SHORTEDds SHORTEDSHORTED ID= 19A<br>Crss  rss    = Cgd gd  VDS= 24V<br>Coss  oss   = Cds + Cgdds + Cgd+ Cgdgd 12 VDS= 15V<br>SIeIee cec YYe<br>10000<br>Cississ<br>S o Ih 8<br>Cossoss eat eee WA<br>1000<br>fee Crssrss s eo oo 4<br>P T TF Fy<br>ell emmeniil| 0 JT<br>eee<br>100<br>0 20 40 60 80 100 120<br>1 10 100<br> Qg,  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>T ro TJ = 150°C ] 100 Gas 10 0μ sec<br>100<br>SS a poegagtprestees ieh ta<br>10<br>1 ms ec<br>PT Y e TJ = 25°C i] L RA<br>+ A<br>10<br>1<br>Tf ytAf |) R Ft TA = 25°C 10m g s ec t' s<br>Tj = 150°C<br>VGS = 0V Single Pulse<br>1.0 ae fp ip 0.1 peeSnr acu<br>0.2 0.4 0.6 0.8 1.0 1.2 0 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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24 2.5<br>NY<br>20<br>ID = 250μA<br>16 PN EEE 2.0 NOL<br>SaRaSCaEEe nNG<br>12 N\ ID = 100μA<br>8 tT T ENTE 1.5 Ny<br>4<br>0 TET ETTPLL 1.0 \<br>25 50 75 100 125 150<br>-75 -50 -25 0 25 50 75 100 125 150<br>TA , Ambient Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Threshold Voltage vs. Temperature<br>Ambient Temperature<br>100<br>D = 0.50<br>10 a 0.20 oe atl<br>a 0.10 eeleee Ri (°C/W) τι (sec)<br>0.05 0.0141064 0.000057<br>0.0210000 0.000286<br>1 OO 0.02 eee R 1 aa R 2 R 3 R 4 R 5 R 6 R 7 R 8 — 0.2184000 0.000375<br>0.01 τJ R1 R2 R3 R4 R5 R6 R7 R8 0.8204000 0.001902<br>τJ τa 4.7558194 0.004544<br>— en aati ot τ1τ1 a τ2τ2 a τ3τ3 es τ4τ4 τ5τ a 5 τ6τ a 6 τ7τ + 7 τ8τ8 es 28.90761700.4648000 0.0385630.013931<br>0.1 EAI ITT Ci=  Ci τi/Ri i/Ri 0 EE 15.1191958 2.069546<br>Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthja + Tc<br>ct |<br>0.01<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>VGS(th), Gate Threshold Voltage (V)<br>ID  , Drain Current (A)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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7 1000<br>ID = 19A                  I D<br>TOP          6.4A<br>6 800                 7.4A<br>BOTTOM   19A<br>5 eofVY}| |} 600 SeoN<br>4 TJ = 125°C 400<br>ANE RAPE<br>3<br>TJ = 25°C 200<br>ST RAN<br>2<br>0<br>2.0 4.0 6.0 8.0 10.0<br>25 50 75 100 125 150<br>VGS, Gate-to-Source Voltage (V)<br>Starting TJ, Junction Temperature (°C)<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (m EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance vs. Gate Voltage 

**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 14a.** Unclamped Inductive Test Circuit 

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**Fig 15a.** Switching Time Test Circuit 

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V(BR)DSS<br>tp<br>IAS<br> Unclamped Inductive Waveforms<br>VDS<br>90%<br>10% i<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 14b.** Unclamped Inductive Waveforms 

**Fig 15b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {{ P.W. Period —_—_ — D = —— Period<br>) [©)]    •  Circuit Layout Considerations |t V | GS=10V<br>| | -  •   LowGround StrayPlane Inductance<br> •   Low Leakage Inductance @® D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oat - Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 = VDD<br>ma<br>•   Re-Applied<br>Re ) •   dv/dtDriver controlledsame type byas RgD.U.T. Vpp + Voltage Body Diode  Forward Drop<br>•   - Inductor Curent<br>•<br>D.U.T. - Device Under Test OO<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" ®<br>* Veg = 5V for Logic Level Devices<br>Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel<br>HEXFET ® Power MOSFETs<br>Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>20K1K S Vgs(th)<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**Fig 17a.** Gate Charge Test Circuit 

**Fig 17b.** Gate Charge Waveform 

www.irf.com 

7 

## **SO-8  Package Outline** 

Dimensions are shown in milimeters (inches) 

NOTES: 

**==> picture [457 x 215] intentionally omitted <==**

**----- Start of picture text -----**<br>
INCH E S MILLIME T E RS<br>DIM<br>D B MIN MAX MIN MAX<br>a So<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>aan 8 7 6 5 === c .0075 .0098 0.19 0.25<br>6 H D .189 .1968 4.80 5.00<br>E<br>1 2 3 4 0.25 [.010]  A a E .1497 .1574 3.80 4.00<br>e .050  B AS IC 1.27  B AS IC<br>A e 1 .025  B AS IC 0.635  B AS IC<br>a || eeai H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X — e Job ii L .016 .050 0.40 1.27<br>i y  0°  8°  0°  8°<br>e1 K  x 45°<br>A<br>C<br>y<br>||. 8X b Ff A1 [esl 0.10 [.004]  ) 8X L 8X c 1<br>0.25 [.010]  C A B 7<br>FOOTPRINT<br>8X 0.72 [.028]<br>**----- End of picture text -----**<br>


1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 

2.  CONTROLLING DIMENSION: MILLIMETER 

3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 

4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 

- 5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 

- O 7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 

**==> picture [201 x 80] intentionally omitted <==**

**----- Start of picture text -----**<br>
6.46 [.255]<br>| |<br>00002<br>3X 1.27 [.050] ee<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## **SO-8 Part Marking Information** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

DATE CODE (YWW) / P =  DISGNATES LEAD - FREE PRODUCT (OPTIONAL) HAA AY Y =  LAST DIGIT OF THE YEAR WW =  WEEK XXXX A =  ASSEMBLY SITE CODE INTERNATIONAL F7101 RECTIFIER LOT CODE LOGO PART NUMBER 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

www.irf.com 

8 

## **SO-8 Tape and Reel** 

Dimensions are shown in milimeters (inches) 

**==> picture [217 x 277] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>NOTES:<br>1.   CONTROLLING DIMENSION : MILLIMETER.<br>2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).<br>3.   OUTLINE CONFORMS TO EIA-481 & EIA-541.<br> 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.25mH, RG = 25Ω, IAS = 19A. 

Pulse width ≤ 400μs; duty cycle ≤ 2%. 

When mounted on 1 inch square  copper board. 

Rθ is measured at 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/08 

www.irf.com 

9 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF8788TRPBF/power-mosfet-n-channel-30-v-24-a-2800-ohm-soic)
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- [Supplier page](https://es.farnell.com/infineon/irf8788trpbf/mosfet-n-ch-30v-24a-soic/dp/2725926)
---

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