# Power MOSFET, N Channel, 30 V, 18 A, 4800 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2468028RL/)

**URL**: https://novapart.co/products/IRF8736TRPBF/power-mosfet-n-channel-30-v-18-a-4800-ohm-soic
**SKU**: IRF8736TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2340
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 18A |
| Drain Source On State Resistance | 4800µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468028RL/)

## PD -97120 IRF8736PbF 

## HEXFET Power MOSFET 

## **Applications** 

Synchronous MOSFET for Notebook Processor Power Synchronous Rectifier MOSFET for Isolated  DC-DC Converters in Networking Systems 

## **Benefits** 

Very Low RDS(on) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead -Free 

|**VDSS**|**RDS(on) max**|**Qg Typ.**|
|---|---|---|
|**30V**|**4.8m @VGS = 10V**|**17nC**|



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## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~a~~|30<br>~~a~~|V|
|VGS|Gate-to-Source Voltage<br>~~a~~|± 20<br>~~a~~||
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V<br>~~a~~<br>~~a~~<br>~~———————~~|18<br>~~a~~<br>~~a~~<br>~~———————~~|A<br>~~———————~~|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V<br>~~———————~~|14.4<br>~~———————~~||
|IDM|Pulsed Drain Current<br>~~———————~~<br>~~ae~~<br>~~ce~~|144<br>~~———————~~<br>~~ae~~||
|PD@TA= 25°C|Power Dissipation<br>~~a~~<br>~~ce~~|2.5<br>~~a~~|W|
|PD@TA= 70°C|Power Dissipation<br>~~ce~~|1.6||
||Linear Derating Factor<br>~~ce~~<br>~~ee~~|0.02<br>~~ee~~|W/°C<br>~~ee~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55  to + 150<br>~~ee~~|°C<br>~~ee~~|



**Thermal Resistance** 

|~~ee~~|**Parameter**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Units**<br>~~ee~~|
|---|---|---|---|---|
|RθJL<br>~~ee~~|Junction-to-Drain Lead<br>~~ee~~|–––<br>~~ee~~|20<br>~~ee~~|°C/W<br>~~ee~~|
|RθJA<br>~~ee~~|Junction-to-Ambient<br>~~ee~~|–––<br>~~ee~~|50<br>~~ee~~||



> Notes Oo hrough © are on page 9 www.irf.com 

1 08/1/07 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~Gs~~|**Typ.**<br>~~sD~~|**Max. **<br>~~sD~~|**Units**<br>~~GO GO~~|**Conditions**<br>~~GO~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~en~~|30<br>~~en~~<br>~~Gs~~|–––<br>~~en~~<br>~~sD~~<br>~~ID~~|–––<br>~~en~~<br>~~sD~~<br>~~GOD~~|V<br>~~en~~<br>~~GO GO~~<br>~~GOGO~~|VGS= 0V, ID= 250µA<br>~~en~~<br>~~GO~~<br>~~GOGO~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~en~~<br>~~GO~~|–––<br>~~en~~<br>~~Gs ~~<br>~~GO~~<br>~~|~~|0.022<br>~~en~~<br> ~~sD~~<br>~~GO~~<br>~~ID~~<br>~~|~~|–––<br>~~en~~<br>~~sD ~~<br>~~GO~~<br>~~GOD~~|V/°C<br>~~en~~<br> ~~GO GO~~<br>~~GO~~<br>~~GOGO~~|Reference to 25°C, ID= 1mA<br>~~en~~<br>~~GO~~<br>~~GO~~<br>~~GOGO—~~|
|RDS(on)<br>~~Sn~~|Static Drain-to-Source On-Resistance<br>~~GO~~<br>~~Sn~~|–––<br>~~GO~~<br>~~|~~|3.9<br>~~GO~~<br>~~ID ~~<br>~~|~~|4.8<br>~~GO~~<br> ~~GOD~~|mΩ<br>~~GO~~<br>~~GOGO~~|VGS= 10V, ID= 18A<br>~~GO~~<br>~~GOGO—~~|
|||–––<br>~~|~~|5.5<br><br>~~|~~|6.8<br>||VGS= 4.5V, ID= 14.4A<br>~~—~~<br>®|
|VGS(th)<br>~~Sn~~<br>~~a~~|Gate Threshold Voltage<br>~~Sn~~<br>~~a~~|1.35<br>~~|~~<br>|1.8<br><br>~~|~~<br>|2.35<br><br>|V<br><br>|VDS= VGS, ID= 50µA<br>~~—~~<br>|
|∆VGS(th)<br>~~Sn~~<br>~~a~~|Gate Threshold Voltage Coefficient<br>~~Sn~~<br>~~a~~|–––<br>|-6.1<br>|–––<br>|mV/°C<br>||
|IDSS<br>~~Sn~~<br>~~a~~|Drain-to-Source Leakage Current<br>~~Sn~~<br>~~aLE~~|–––<br>~~LE~~<br>~~|~~|–––<br>~~LE~~<br>~~|~~|1.0<br>~~LE~~|µA<br>~~LE~~|VDS= 24V, VGS= 0V<br>~~LE~~|
|||–––<br>~~LE~~<br>~~|~~|–––<br>~~LE~~<br>~~|~~|150<br>~~LE~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~LE~~|
|IGSS<br>|Gate-to-Source Forward Leakage<br>~~LE~~<br>~~A~~|–––<br>~~LE~~<br>~~|~~<br>~~A~~|–––<br>~~LE~~<br>~~|~~<br>~~A~~|100<br>~~LE~~<br>~~A~~|nA<br>~~LE~~<br>~~A~~<br>~~DG~~|VGS= 20V<br>~~LE~~<br>~~A~~|
||Gate-to-Source Reverse Leakage<br>~~A~~|–––<br>~~A~~<br>~~a ~~<br>~~Ge~~|–––<br>~~A~~<br> ~~ee~~<br>~~rs~~|-100<br>~~A~~<br>~~ee~~<br>~~DG~~||VGS= -20V<br>~~A~~<br>~~QO~~|
|gfs|Forward Transconductance<br>~~en~~|52<br>~~en~~<br>~~Ge~~|–––<br>~~en~~<br>~~rs~~|–––<br>~~en~~<br>~~DG~~|S<br>~~en~~<br>~~DG~~|VDS= 15V, ID= 14.4A<br>~~en~~<br>~~QO~~|
|Qg|Total Gate Charge<br>~~en~~<br>~~es~~|–––<br>~~en~~<br>~~Ge~~<br>~~es~~|17<br>~~en~~<br>~~rs ~~<br>~~es~~|26<br>~~en~~<br> ~~DG~~<br>~~es~~|nC<br>~~en~~<br>~~DG ~~<br>~~GOGO~~|See Fig. 16<br>VDS= 15V<br>VGS= 4.5V<br>ID= 14.4A<br>~~en~~<br> ~~QO~~<br>~~GOGO~~|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~eG~~|–––<br>~~eG~~|4.4<br>~~eG~~|–––<br>~~eG~~|||
|Qgs2<br>~~a~~|Post-Vth Gate-to-Source Charge<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>|1.9<br>~~ee~~<br>|–––<br>~~ee~~<br>|||
|Qgd<br>~~a~~|Gate-to-Drain Charge<br>~~a~~|–––<br>|5.8<br>|–––<br>|||
|Qgodr<br>~~a~~|Gate Charge Overdrive<br>~~aee~~|–––<br>~~ee~~<br>~~ee~~|4.9<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~es~~|–––<br>~~es~~<br>~~ee~~|7.7<br>~~es~~<br>~~es~~<br>~~ID~~|–––<br>~~es~~<br>~~GOD~~|||
|Qoss|Output Charge<br>~~es~~<br>~~GO~~<br>~~ee~~|–––<br>~~es~~<br>~~ee ~~<br>~~GO~~<br>~~Gs~~|7.1<br>~~es~~<br> ~~es~~<br>~~GO~~<br>~~ID~~<br>~~rs~~|–––<br>~~es~~<br>~~GO~~<br>~~GOD~~<br>~~OD~~|nC<br>~~GO~~<br>~~GOGO~~<br>~~QO GO~~|VDS= 10V, VGS= 0V<br>~~GO~~<br>~~GOGO~~<br>~~GO~~|
|RG|Gate Resistance<br>~~GO~~<br>~~Pn~~<br>~~ee~~|–––<br>~~GO~~<br>~~Pn~~<br>~~Gs~~|1.3<br>~~GO~~<br>~~ID ~~<br>~~Pn~~<br>~~rs~~|2.2<br>~~GO~~<br> ~~GOD~~<br>~~Pn~~<br>~~OD~~|Ω<br>~~GO~~<br>~~GOGO~~<br>~~Pn~~<br>~~QO GO~~|~~GO~~<br>~~GOGO~~<br>~~Pn~~<br>~~GO~~|
|td(on)<br>~~a~~|Turn-On DelayTime<br>~~Pn~~<br>~~ee~~<br>~~a~~|–––<br>~~Pn~~<br>~~Gs~~<br>|12<br>~~Pn~~<br>~~rs~~<br>|–––<br>~~Pn~~<br>~~OD~~<br>|ns<br>~~Pn~~<br>~~QO GO~~|See Fig. 14<br>VDD= 15V, VGS= 4.5V<br>ID= 14.4A<br>RG= 1.8Ω<br>~~Pn~~<br>~~GO~~<br>@|
|tr<br>~~a~~|Rise Time<br>~~ee~~<br>~~a~~|–––<br>~~Gs ~~<br>|15<br> ~~rs~~<br>|–––<br>~~OD~~<br>|||
|td(off)<br>~~a~~|Turn-Off DelayTime<br>~~aee~~|–––<br>~~ee~~<br>~~ee~~|13<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~es~~<br>~~ee~~|7.5<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Ciss<br>~~a~~|Input Capacitance<br>~~es~~<br>~~ee~~<br>~~a~~|–––<br>~~es~~<br>~~ee ~~<br>~~ee~~<br>|2315<br>~~es~~<br> ~~es~~<br>~~ee~~<br>|–––<br>~~es~~<br>~~ee~~<br>|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 15V|
|Coss<br>~~a~~|Output Capacitance<br>~~a~~|–––<br>|449<br>|–––<br>|||
|Crss<br>~~a~~|Reverse Transfer Capacitance<br>~~aee~~|–––<br>~~ee~~|219<br>~~ee~~|–––<br>~~ee~~|||



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1000<br>VGS<br>TOP           10V<br>5.0V<br>100 4.5V<br>3.5V<br>OO ee ee 3.0V<br>2.7V<br>10 Za ee 2.5V<br>eee BOTTOM 2.3V<br>1<br>0.1<br>0.01 ee 2.3V |<br>≤ 60µs PULSE WIDTH<br>0.001 ri SS Tj = 25°C meal el<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>Ee es es ee es es es<br>100<br>10<br>1 TJ = 150°C fp<br>ee ee ee Ae ee ee ee ee ee<br>1<br>HA ee) a TJ = 25°C a ee ee<br>0.1<br>=== VDS = 15V<br>a eee 2 eee<br>ne Ae ≤ 60µs PULSE WIDTH<br>0.01 avauh<br>1.0 2.0 3.0 4.0 5.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           10V<br>5.0V<br>4.5V<br>3.5V<br>100 —— eS ———— oo ae 3.0V<br>Or 2.7V2.5V<br> 7tiliee BOTTOM 2.3V<br>10<br>1 2.3V<br>PFA EE<br>≤ 60µs PULSE WIDTH<br>0.1 lle HT El Tj = 150°C alll l<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.0<br>ID = 18A<br>VGS = 10V<br>1.5 W<br>ye<br>a<br>1.0 eetLN EL<br>PLL<br>0.5 EEL LL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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10000 5<br>VGS   = 0V,       f = 1 MHZ<br>I = 14.4A<br>Ciss   = Cgs + Cgd,  Cds SHORTED D<br>7 Crss   = Cgd  4 VDS= 24V Ws<br>Coss  = Cds + Cgd VDS= 15V<br>= 7<br>2 eee Cc] Y<br>Ciss<br>SS ee = enn | a<br>3<br>1000<br>AT) = 2 yA<br>Coss<br>PTT a ee<br>PRAe e Eatel 1 PAT/ yy<br>Crss<br>0<br>100 aicrim =  ZL<br>0 4 8 12 16 20<br>1 10 100<br> Qg,  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100 | 100 Pecreagpeszetade ens<br>1 00µsec<br>TJ = 150°CJ = 150°C= 150°C , if) Cen e S,|<br>1m s ec<br>10 10<br>T = 25°C 10msec<br>J<br>1 p f 1 pop Pa<br>TA = 25°C<br>Tj = 150°C<br>VGS = 0VGS = 0V= 0V Single Pulse<br>pf ff | f | | ee a.<br>0.1 ee | 0.1 Cai Cl<br>0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100<br>VSD,  Source-to-Drain Voltage (V) VDS,  Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000<br>100 |<br>TJ = 150°CJ = 150°C= 150°C , if)<br>10<br>T = 25°C<br>J<br>1 p f<br>VGS = 0VGS = 0V= 0V<br>pf ff | f | |<br>0.1 ee |<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD,  Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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TOR Rectifier<br>20 2.4<br>2.2<br>T_ h 3ARSaSe<br>16<br>2.0<br>Ng 1.8 ENR I D  = 50µA<br>12<br>TPN EEE 1.6 COPREETEE<br>8 ST PTEENN TE ERAN<br>1.4<br>“ EaaeeeNee<br>1.2<br>4 TTTTELT NY EEEERERRENG<br>1.0<br>0 TPP), = 0.8  HARRIEPE tt Et tt dy<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br>TA,  Ambient Temperature (°C) TJ, Temperature ( °C )<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Threshold Voltage Vs. Temperature<br>Ambient Temperature<br>100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 Sane 0.02 ee sos == fll R1 R1 R2 R atl 2 R3 R3 R4 R4 lll Ri (°C/  Ml W) τι (sec)<br>0.01 τJ τJ τa 1.396574 0.000246<br>τ1τ1 τ2 τ2 τ3τ3 τ4 τ4 7.20685127.1278 0.0379271.0882<br>0.1 Ci=  Ci τi/Ri i/Ri 14.26877 30.3<br>Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>0.01 Daal ( THERMAL RESPONSE ) HL LLU EEE 2. Peak Tj = P dm x Zthja + Tc lll<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1,  Rectangular Pulse Duration (sec)<br>ID  , Drain Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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600<br>15V<br>                 I D<br>500 | | TOP         1.28A<br>                1.75A<br>L DRIVER<br>VDS BOTTOM   14.4A<br>400 V f<br>RGG D.U.T +<br>IASAS - [[V][DD]][[DD]] A 300 V E<br>20V<br>tpp 0.01ΩΩ<br>200<br>Daly K |X|<br> Unclamped Inductive Test Circuit<br>100<br>s t<br>V(BR)DSS(BR)DSS<br>i a<br>tp 0<br>25 50 75 100 125 150<br>/ Starting TJ, Junction Temperature (°C)<br>y | Fig 12c.   Maximum Avalanche Energy<br>/ \ Vs. Drain Current<br>AS | |<br>— Vos =r<br> Unclamped Inductive Waveforms<br>-<br>P an e,D.UT. | ;<br>Current Regulator<br>Same Type as D.U.T.  1<br> 0.1 %<br>50KΩ<br>12V .2µF<br>.3µF Fig 14a.   Switching Time Test Circuit<br>THe D.U.T. | +-VDS VDSDS<br>90%<br>VGS<br>3mA<br>—& 10%<br>IG ID VGSGS<br>Current Sampling Resistors<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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15V<br>VDS L DRIVER<br>RGG D.U.T +<br>- [[V][DD]][[DD]]<br>IASAS A<br>20V<br>tpp 0.01ΩΩ<br>Daly<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS(BR)DSS<br>tp<br>/<br>y |<br>/ \<br>IAS |<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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VDSDS<br>90%<br>10%<br>VGSGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 13.** Gate Charge Test Circuit 

**Fig 14b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— — D = —— Period<br>Circuit Layout Considerations V | GS=10V<br>   •<br>(4) [©)] | t<br>•<br>| =] - LowGround StrayPla I n eductance<br>•   Low Leakage Inductance a) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 _ VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dv/dt controlled by Rg Vop - Inductor Curent<br>•<br>D.U.T. - Device Under Test SOO |<br>Isp controlled by Duty Factor "D" @ Ripple  ≤ 5% ISD<br>* Vg = 5V for Logic Level Devices<br>Fig 15.  Peak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® Power MOSFETs<br>Id<br>Vds<br>Vgs<br>Vgs(th)<br>H(I\1<br>\! 1 I t<br>————__ _ >'+t_ _ _ _> _>= 4!<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**Fig 16.** Gate Charge Waveform 

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## **SO-8  Package Outline** 

Dimensions are shown in milimeters (inches) 

## **SO-8 Part Marking Information** 

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## **SO-8 Tape and Reel** 

Dimensions are shown in milimeters (inches) 

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TERMINAL NUMBER 1<br>Oo OO ©<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>LX 12.40 ( .488 )<br>**----- End of picture text -----**<br>


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NOTES :<br>**----- End of picture text -----**<br>


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1. CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

es Repetitive rating;  pulse width limited by  max. junction temperature. ) Starting TJ = 25°C, L = 1.21mH, RG = 25Ω, IAS = 14.4A. ©) Pulse width ≤ 400µs; duty cycle ≤ 2%. 

When mounted on 1 inch square copper board 

θ 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 8/2007 

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- [Supplier page](https://es.farnell.com/infineon/irf8736trpbf/mosfet-n-ch-30v-18a-soic-8/dp/2468028RL)
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